CN109698126A - Improve the method for silicon needle pore defect - Google Patents
Improve the method for silicon needle pore defect Download PDFInfo
- Publication number
- CN109698126A CN109698126A CN201811581482.9A CN201811581482A CN109698126A CN 109698126 A CN109698126 A CN 109698126A CN 201811581482 A CN201811581482 A CN 201811581482A CN 109698126 A CN109698126 A CN 109698126A
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- CN
- China
- Prior art keywords
- oxygen
- micro
- plasma
- needle pore
- pore defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- 230000007547 defect Effects 0.000 title claims abstract description 21
- 239000011148 porous material Substances 0.000 title claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 16
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- -1 oxygroup Ion Chemical class 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of methods for improving silicon needle pore defect, in IMP photoresist removal technical process, using H2O plasma, or micro- oxygen is added in high-purity hydrogen plasma, avoid hydrogen plasma from causing silicon needle pore defect using micro- oxygen environment.The present invention can be avoided silicon needle pore defect caused by hydrogen plasma.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing fields, more particularly to a kind of method for improving silicon needle pore defect.
Background technique
In order to meet the technology that line width limits, existing lightly doped drain (LDD) high dose ion injects (HDIS) mode, with
Covering optical cement layer can generate modification photoresist, and modification photoresist removal is difficult and demands strict technology, and existing main problem has:
1, silicon face is exposed to photoresist removal technique, and LDD surface oxidation and silicon is caused to lose.
2, photoresist must will be modified using prolonged plasma reaction using plasma removal photoresist to remove, lead to silicon table
Face oxide layer thickens.
3, prolonged pure hydrogen technique can increase modification photoresist removal efficiency, but also increase Doped ions loss and silicon
Needle pore defect Probability influences subsequent electrical property.In lightly doped drain (LDD) ion implantation process, the ion that needs to adulterate
Unstable bond can be generated by injection silicon face, dopant and silicon form circuit channel after Overheating Treatment.Use plasma
It carries out in modification photoresist removal process, high-purity hydrogen plasma can [include: B (boron), BF (fluorination with hydrogen ion source for a long time
Boron), F (fluorine)] generate reaction [include: ion implantation and photoresist removal generate Si (silicon)-B*, Si-H (hydrogen) * bond, " * " belongs to
Unstable bond symbol], Si is detached from by the unstable bond of subsequent heat treatment and generates BF3 (boron trifluoride), and H2 (hydrogen) etc. is waved
Object is sent out, leads to lattice defect, while losing dopant and causing silicon loss occurrence silicon needle pore defect between electronic channel.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of methods for improving silicon needle pore defect, can be avoided hydrogen plasma
Silicon needle pore defect caused by body.
In order to solve the above technical problems, the method for improvement silicon needle pore defect of the invention, is to adopt the following technical scheme that reality
Existing:
In IMP (ion implanting) photoresist removal technical process, using H2O (water) plasma, or in High Purity Hydrogen etc.
Micro- oxygen is added in gas ions, inhibits hydrogen plasma to enter using micro- oxygen environment unstable after injecting ions into inside silicon structure
Bond is destroyed, and lattice defect is generated, and silicon needle pore defect is avoided to occur.
Using method of the invention, plasma is generated using new plasma generating source, mainly utilizes micro- oxygen ring
Border is reflected to inhibit hydrogen atom and atom is lightly doped, and hydrogen plasma is avoided to cause silicon needle pore defect.Use pure hydrogen plasma
The modification photoresist of lightly doped drain generation can be effectively removed, removal efficiency is improved.It can be with by verifying pure hydrogen plasma
Reduce the oxidation of silicon face.Oxidation, H can be reduced using micro- oxygen technique2O plasma or pure hydrogen plasma belong to environment-friendly type
Plasma generating source can be reduced to environmental injury.In addition, from cost consideration, it is simultaneous to device requirement using method of the invention
Capacitive is high.
Detailed description of the invention
Present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:
Fig. 1 is the method flow schematic diagram for improving silicon needle pore defect.
Specific embodiment
High dose ion injection will form the modification photoresist for being not easy to remove, and silicon is exposed to plasma in photoresist removal process
It will form silicon oxide layer in body.
As shown in connection with fig. 1, the method for improving silicon needle pore defect is to remove work in processing procedure IMP (ion implanting) photoresist
Micro- oxygen environment is created in skill, i.e., adds micro- oxygen in high-purity hydrogen plasma, and O (oxygen) is generated by plasma generating mode,
Dopant bond is destroyed for inhibiting H (hydrogen) to enter in silicon substrate.Photoresist removal efficiency can be increased using micro- oxygen environment, avoided
Hydrogen plasma causes silicon needle pore defect.
Micro- oxygen environment (micro- oxygen in other words) refers to oxygen content less than 18%.
When adding micro- oxygen, the operation temperature in plasma chamber body is 200~290 DEG C.
When adding micro- oxygen, added in High Purity Hydrogen environment.The High Purity Hydrogen environment refers to greater than 4%H2 (hydrogen), dilute
Outgassing body is unlimited.
The micro- oxygen of addition, refers to that gas is added as plasma in oxonium ion source of the addition with oxygroup, comprising: nitrogen oxidation
Close object, H2O, O3 (ozone), NH4OH (ammonium hydroxide), D2O (deuterium oxide).
The gas source of the micro- oxygen of addition is gaseous source.
The gas of the micro- oxygen of addition is Solid Source or liquid source, and oxonium ion source is used as after being volatilized.
Above by specific embodiment, invention is explained in detail, but these are not constituted to of the invention
Limitation.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these
It should be regarded as protection scope of the present invention.
Claims (7)
1. a kind of method for improving silicon needle pore defect, it is characterised in that: in IMP photoresist removal technical process, using H2O etc. from
Daughter, or micro- oxygen is added in high-purity hydrogen plasma, inhibit hydrogen plasma to enter inside silicon structure using micro- oxygen environment
Unstable bond after injecting ions into is destroyed, and lattice defect is generated, and silicon needle pore defect is avoided to occur.
2. the method as described in claim 1, it is characterised in that: operation temperature when adding micro- oxygen, in plasma chamber body
It is 200~290 DEG C.
3. the method as described in claim 1, it is characterised in that: the High Purity Hydrogen refers to greater than 4%H2.
4. the method as described in claims 1 to 3 is any, it is characterised in that: the micro- oxygen of addition refers to oxygen of the addition with oxygroup
Ion source adds gas as plasma, comprising: oxynitrides, H2O, O3, NH4OH, D2O.
5. method as claimed in claim 4, it is characterised in that: the gas source of the micro- oxygen of addition is gaseous source.
6. method as claimed in claim 4, it is characterised in that: the gas of the micro- oxygen of the addition is Solid Source or liquid source, into
Oxonium ion source is used as after row volatilization.
7. the method as described in claims 1 to 3 is any, it is characterised in that: micro- oxygen environment refers to oxygen content less than 18%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811581482.9A CN109698126A (en) | 2018-12-24 | 2018-12-24 | Improve the method for silicon needle pore defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811581482.9A CN109698126A (en) | 2018-12-24 | 2018-12-24 | Improve the method for silicon needle pore defect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109698126A true CN109698126A (en) | 2019-04-30 |
Family
ID=66232742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811581482.9A Pending CN109698126A (en) | 2018-12-24 | 2018-12-24 | Improve the method for silicon needle pore defect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109698126A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1682353A (en) * | 2002-09-18 | 2005-10-12 | 马特森技术公司 | Systems and methods for removing material |
| CN101542693A (en) * | 2006-12-11 | 2009-09-23 | 应用材料股份有限公司 | Dry photoresist stripping process and apparatus |
-
2018
- 2018-12-24 CN CN201811581482.9A patent/CN109698126A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1682353A (en) * | 2002-09-18 | 2005-10-12 | 马特森技术公司 | Systems and methods for removing material |
| CN101542693A (en) * | 2006-12-11 | 2009-09-23 | 应用材料股份有限公司 | Dry photoresist stripping process and apparatus |
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|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190430 |
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| RJ01 | Rejection of invention patent application after publication |