CN109603940A - Electrowetting microfluidic system based on aluminium and aluminum oxide combination electrode - Google Patents
Electrowetting microfluidic system based on aluminium and aluminum oxide combination electrode Download PDFInfo
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- CN109603940A CN109603940A CN201910015637.0A CN201910015637A CN109603940A CN 109603940 A CN109603940 A CN 109603940A CN 201910015637 A CN201910015637 A CN 201910015637A CN 109603940 A CN109603940 A CN 109603940A
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims abstract description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 36
- 239000004411 aluminium Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 16
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 230000003647 oxidation Effects 0.000 claims description 14
- 239000002086 nanomaterial Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 238000006056 electrooxidation reaction Methods 0.000 claims description 3
- 230000003628 erosive effect Effects 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 9
- 239000012530 fluid Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000003075 superhydrophobic effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Dispersion Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Hematology (AREA)
- Clinical Laboratory Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
The electrowetting microfluidic system based on aluminium and aluminum oxide combination electrode that the invention discloses a kind of, belongs to electrowetting digital micro-fluid technical field.There is provided a kind of simple process and the electrowetting digital micro-fluid system and method for manufacturing technology of low-cost aluminium and aluminum oxide combination electrode and its composition.Using aluminium (Al) material with good electric conductivity as electrode body, including substrate, it is embedded in the dielectric layer of intrabasement electrode, electrode connecting line and electrode face, and the conductive cap on closed base top, it is characterized in that the electrode is aluminum material, the dielectric layer is the aluminum oxide nanometer layer with electrode one.Technology for preparing electrode complexity and manufacturing cost are reduced the beneficial effects of the invention are as follows very big；Dielectric layer has both insulation and hydrophobic property, and combination electrode surface chemical property is stablized；Aluminum oxide oxide layer structure can according to need carry out manual control.
Description
Technical field
The electrowetting microfluidic system based on aluminium and aluminum oxide combination electrode that the invention discloses a kind of, belongs to electric profit
Wet digital micro-fluid technical field.
Background technique
Microfluid and micro-total analysis system field in the past decade achieve huge development.Traditional microfluidic devices
Part, the technology are born in last century the nineties, and main industries pioneer includes Ha Fu university, U.S. George
M.Whitesides, Switzerland Andreas Manz etc..It in the substrates such as monocrystalline silicon, glass, organic matter mainly by passing through
Semiconductor processing technology forms liquid flow channel, and forms the driving to liquid by external thrusts such as mechanical pumps, utilizes ditch
The combination of road graphic designs, and a large amount of mechanical pumps etc..Such micro-fluidic chip has the ability to realize complex fluid sample process, reaction
And the functions such as detection.
Based on this, gradually derive micro-total analysis system (micro total analysis system, μ TAS),
On piece laboratory (lab-on-chips, LoC).Product type based on such technology is abundant, and gradually obtain developer and
The attention of user.Currently, the common detection system based on microflow control technique in the market, is all made of such technology.
Electrowetting digital micro-fluid, be it is a kind of using potential regulation liquid and solid surface tension and change contact angle, and
Generate the digital microfluidic technology of the method control microlayer model movement of tangential thrust.It is mainly characterized in that: one, drop and be not restricted
In predefined micro- channel, and the movement in two-dimensional space (plane) may be implemented；Two, liquid driven power is from being located at
Conductive electrode in chip is no longer dependent on the peripheral hardwares such as mechanical pump, reduces the complexity of system.Technique is applicable in due to it
Range is wide, and application prospect is huge, once the attention for just having obtained industry that emerges.Specific technical solution is the electrode in pixelation
On need to prepare one dielectric layer and one layer of super-hydrophobic layer to realize the manipulation of drop, the material of dielectric layer and super-hydrophobic layer and
Preparation process is most important for the liquid drop control ability of electrowetting system.The preparation of dielectric layer at present generallys use CVD (chemistry
Vapor deposition), ALD (atomic layer deposition), the methods of spin coating liquid dielectric material, the dielectric layer homogeneity of sedimentation preparation is preferable
But the process is more complicated and preparation cost is high, and spin-coating method is low in cost but material loss is serious and homogeneity is poor.Super-hydrophobic layer
Material be mainly Teflon or CYTOP, mainly use spin-coating method, easily cause material loss and homogeneity is poor.Femtosecond laser
Material surface can be moulded formation of nanostructured by laser by the method for processing, hydrophobic to achieve the effect that, but this method prepares work
Skill is complex and with high costs.
Summary of the invention
In view of the above shortcomings of the prior art, the object of the present invention is to provide a kind of simple process and old cheap aluminium and
The electrowetting digital micro-fluid system and method for manufacturing technology of aluminum oxide combination electrode and its composition.
Technical solution of the present invention shows as the following aspects:
Using aluminium (Al) material with good electric conductivity as electrode body, one layer of insulation is adhered on its working face
Compactness dielectric layer, the dielectric layer are commonly called as aluminium oxide by nano-aluminium oxide (Al2O3) and form, and can effectively cover electrode
Surface is ideal dielectric layer material, therefore aluminium/aluminum oxide electrode can satisfy the requirement of electrowetting system；
Aluminium has lower density and high plasticity, and electrod-array can be prepared by a variety of manufacturing process, and electrode surface needs
Slightly above substrate is to guarantee that electrode surface has enough materials and Growth In Space (aluminum oxide) oxide layer.
The nano-aluminium oxide layer is made of electrochemical erosion method, i.e., the aluminium electrode of pixelation is placed in anode
In oxidative system, all aluminium electrodes are connected to anode, so that aluminium electrode surface is formed aluminum oxide layer by oxidation；
It, can be with by adjusting Arrays Aluminum Films in Acid Solution (such as sulfuric acid, phosphoric acid solution) concentration, size of current, oxidization time parameter
Aluminum oxide dielectric layer of the surface with porous nanometer structure or club shaped structure is prepared, the nanostructure on surface will make three
Al 2 O dielectric layer has both hydrophobic property while playing insulating effect.
A kind of combination electrode forming electrowetting microfluidic, including the intrabasement electrode of insertion, electrode connecting line and electrode
The dielectric layer of working face, it is characterized in that the electrode is aluminum material, the dielectric layer is three oxidations with electrode one
Two aluminium nanometer layers.
The electrode can be the geometry array of any amount and arbitrary arrangement.0.5mil is divided between electrode
(0.0127mm), electrode surface are higher by substrate 20um for generating aluminum oxide nanometer layer.
The electrode can be the geometry array of any amount and arbitrary arrangement, between electrode between be divided into it is several to several
Ten microns, electrode surface is higher by substrate 20-50um for generating aluminum oxide nanometer layer.
The aluminum oxide nanometer layer is made of electrochemical erosion method, i.e., the aluminium electrode of pixelation is placed in anode
In oxidative system, all aluminium electrodes are connected to anode, so that aluminium electrode surface is formed aluminum oxide layer by oxidation, will own
Aluminium electrode is connected to anode, and electrolyte is the sulfuric acid solution of 20wt%, and electrolyte is in the shape persistently stirred in oxidation process
State, reaction temperature are room temperature, and voltage is set as 20V, and the reaction time is 60 minutes.
A kind of electrowetting microfluidic system, including substrate, are embedded in intrabasement electrode, electrode connecting line and electrode face
Dielectric layer and closed base top conductive cap, it is characterized in that the electrode be aluminum material, the dielectric layer
For the aluminum oxide nanometer layer with electrode one.
The electrode can be the geometry array of any amount and arbitrary arrangement.0.5mil is divided between electrode
(0.0127mm), electrode surface are higher by substrate 20um for generating aluminum oxide nanometer layer.
The electrode can be the geometry array of any amount and arbitrary arrangement, between electrode between be divided into it is several to several
Ten microns, electrode surface is higher by substrate 20-50um for generating aluminum oxide nanometer layer.
The electrod-array (as shown in Fig. 4) in conjunction with microfluidic structures, top are that lower surface has hydrophobic layer
The upper surface spacing of conductive cap (such as ITO electro-conductive glass), lower lid surface hydrophobic layer and aluminum oxide oxide layer is several
Ten arrive several hundred microns, the space mobile as drop.
Electrode surface of the present invention be higher by substrate 20um for generation aluminum oxide nanometer layer, using electrochemistry
The method of corrosion is made.
Aluminum oxide oxide layer has porous or bar-shaped nanostructure.
Aluminum oxide oxide layer has both insulating properties and hydrophobicity.
The nanostructure and thickness of aluminum oxide oxide layer can be adjusted by adjusting electrochemical corrosion reaction condition.
Technology for preparing electrode complexity and manufacturing cost are reduced the beneficial effects of the invention are as follows very big；Dielectric layer has both insulation
And hydrophobic property, combination electrode surface chemical property are stablized；It is artificial that aluminum oxide oxide layer structure can according to need progress
Control.
Detailed description of the invention
Below in conjunction with attached drawing, specific embodiments of the present invention are illustrated.
Attached drawing 1,2 is the aluminium electrode arrangement schematic diagram of present invention pixel.
Attached drawing 3 is the structural schematic diagram of the aluminium electrode of insertion ground state of the invention.
Attached drawing 4 is electrowetting system structural schematic diagram of the invention.
Attached drawing 5 is dielectric layer structure schematic diagram of the invention.
In figure: 1- substrate, 2- electrode, 3- connecting line, 4- dielectric layer, 5- conductive cap, 6- drop, 7- microfluidic structures.
Attached drawing 6 is the structural schematic diagram of electrochemical corrosive process equipment of the present invention.
Specific embodiment
Embodiment one is referring to attached drawing 4.
A kind of electrowetting microfluidic system, including substrate 1 are embedded in intrabasement electrode 2, electrode connecting line 3 and electrode work
Make the dielectric layer 4 in face and the conductive cap 5 on closed base top, it is characterized in that the electrode 2 is aluminum material, it is described
Dielectric layer 4 be aluminum oxide nanometer layer with electrode one.
The electrode can be the geometry array of any amount and arbitrary arrangement.0.5mil is divided between electrode
(0.0127mm), electrode surface are higher by substrate 20um for generating aluminum oxide nanometer layer.
4*4 square aluminium electrode array as shown in Fig. 1, electrode can be any amount in practical electrowetting system
Arbitrarily it is capable of the geometry of Mi Pu.Electric pole spacing is 0.5mil (0.0127mm), and electrode surface is higher by substrate 20um use
In growth aluminum oxide oxide layer.
Aluminium/aluminum oxide electrod-array is combined (as shown in Fig. 4) with microfluidic structures 7, and top has for lower surface
The conductive cap (such as ITO electro-conductive glass) of hydrophobic layer, the upper surface of lower lid surface hydrophobic layer and aluminum oxide oxide layer
Spacing is 100um, the space mobile as drop.
Embodiment two
The method of the electrochemical corrosion is to be placed in electrod-array in anodic oxidation system (as shown in Fig. 6), will
All aluminium electrodes are connected to anode, and electrolyte is the sulfuric acid solution of 20wt%, and electrolyte is in lasting stirring in oxidation process
State, reaction temperature is room temperature.Voltage is set as 20V, and the reaction time is 60 minutes.
The aluminium electrode part for being higher by substrate forms porous nanostructure (as shown in Fig. 3) through peroxidating, in electrode
Edge nanostructure extends outwardly, so that entire electrod-array surface is by the aluminum oxide oxide layer with porous nanometer structure
Covering.Since its porous nanostructure makes aluminum oxide oxide layer have super-hydrophobic characteristic, simultaneously because three oxidations
Two aluminium oxide layers make the aluminum oxide oxidation interlamellar spacing with porous nanometer structure hydrophobic as dense form insulating materials
The characteristic of layer and dielectric layer, becomes ideal electrowetting system hydrophobic layer and dielectric layer material.
There is good controllability using the method that anodizing prepares aluminum oxide oxide layer, can accurately control
The nanostructure and thickness H (as shown in Fig. 5) of aluminum oxide oxide layer processed.Improving and reducing oxidation voltage can increase respectively
Aperture d that is big and reducing nano-pore.The thickness of oxide layer can be increased and reduce respectively by increasing and decreasing oxidation time.
Arrays Aluminum Films in Acid Solution and concentration are replaced, such as sulfuric acid, phosphoric acid, acetic acid and a variety of mixed solutions can change three oxidations
The nanostructure of two aluminium oxide layers.
Claims (9)
1. a kind of combination electrode for forming electrowetting microfluidic, including the intrabasement electrode of insertion, electrode connecting line and electrode work
Make the dielectric layer in face, it is characterized in that the electrode is aluminum material, the dielectric layer is three oxidations two with electrode one
Aluminium nanometer layer.
2. the combination electrode of composition electrowetting microfluidic according to claim 1, it is characterized in that the electrode can be
The geometry array of any amount and arbitrary arrangement, between electrode between be divided into a few to tens of microns, electrode surface is higher by substrate
20-50um is for generating aluminum oxide nanometer layer.
3. the combination electrode of composition electrowetting microfluidic according to claim 1, it is characterized in that the aluminum oxide
Nanometer layer is made of electrochemical erosion method, i.e., the aluminium electrode of pixelation is placed in anodic oxidation system, by all aluminium electrodes
It is connected to anode, so that aluminium electrode surface is formed aluminum oxide layer by oxidation.
4. a kind of electrowetting microfluidic system, including substrate, are embedded in intrabasement electrode, electrode connecting line and electrode face
Dielectric layer and the conductive cap on closed base top, it is characterized in that the electrode is aluminum material, the dielectric layer is
With the aluminum oxide nanometer layer of electrode one.
5. electrowetting microfluidic system according to claim 4, it is characterized in that the electrode can be any amount and
The geometry array of arbitrary arrangement, between electrode between be divided into a few to tens of microns, electrode surface is higher by substrate 20-50um and is used for
Generate aluminum oxide nanometer layer.
6. electrowetting microfluidic system according to claim 4, it is characterized in that the electrod-array and microfluidic structures
In conjunction with top is the conductive cap that lower surface has hydrophobic layer, and lower lid surface hydrophobic layer is upper with aluminum oxide oxide layer
Surface spacing is tens space to several hundred microns, as drop movement.
7. electrowetting microfluidic system according to claim 4, it is characterized in that the aluminum oxide oxide layer has
Porous or bar-shaped nanostructure.
8. electrowetting microfluidic system according to claim 4, it is characterized in that the aluminum oxide oxide layer has both
Insulating properties and hydrophobicity.
9. electrowetting microfluidic system according to claim 4, it is characterized in that the aluminum oxide oxide layer is received
Rice structure and thickness can be adjusted by adjusting electrochemical corrosion reaction condition.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910015637.0A CN109603940A (en) | 2019-01-08 | 2019-01-08 | Electrowetting microfluidic system based on aluminium and aluminum oxide combination electrode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910015637.0A CN109603940A (en) | 2019-01-08 | 2019-01-08 | Electrowetting microfluidic system based on aluminium and aluminum oxide combination electrode |
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| CN201910015637.0A Pending CN109603940A (en) | 2019-01-08 | 2019-01-08 | Electrowetting microfluidic system based on aluminium and aluminum oxide combination electrode |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100256004A1 (en) * | 2004-11-18 | 2010-10-07 | Riken | Device of Testing Interaction Between Biomolecules, Method of Testing Interaction Between Biomolecules,Method of Measuring Melting Temperature of Biomolecule,Method of Sequencing Nucleic Acid,Method of Causing Interaction Between Biomolecules,and Method of Causing Migration of Biomolecule |
| CN102576096A (en) * | 2009-10-06 | 2012-07-11 | 皇家飞利浦电子股份有限公司 | Electrowetting device |
| CN206372838U (en) * | 2016-11-21 | 2017-08-04 | 胡丛余 | Minisize fluid actuator |
-
2019
- 2019-01-08 CN CN201910015637.0A patent/CN109603940A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100256004A1 (en) * | 2004-11-18 | 2010-10-07 | Riken | Device of Testing Interaction Between Biomolecules, Method of Testing Interaction Between Biomolecules,Method of Measuring Melting Temperature of Biomolecule,Method of Sequencing Nucleic Acid,Method of Causing Interaction Between Biomolecules,and Method of Causing Migration of Biomolecule |
| CN102576096A (en) * | 2009-10-06 | 2012-07-11 | 皇家飞利浦电子股份有限公司 | Electrowetting device |
| CN206372838U (en) * | 2016-11-21 | 2017-08-04 | 胡丛余 | Minisize fluid actuator |
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Effective date of registration: 20210114 Address after: Room 201-1, building A2, Foshan tongchu Logistics Co., Ltd., No. 1, Xianan Road, Guicheng Street, Nanhai District, Foshan City, Guangdong Province, 528251 Applicant after: Guangdong aosu liquid core micro nano technology Co.,Ltd. Address before: 215163 Room 101, building 5, 78 Keling Road, high tech Zone, Suzhou City, Jiangsu Province Applicant before: ACXEL TECH Ltd. |
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Application publication date: 20190412 |