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CN109580634A - A kind of confirmation method that diamond wire surface diamond is reunited - Google Patents

A kind of confirmation method that diamond wire surface diamond is reunited Download PDF

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Publication number
CN109580634A
CN109580634A CN201811464512.8A CN201811464512A CN109580634A CN 109580634 A CN109580634 A CN 109580634A CN 201811464512 A CN201811464512 A CN 201811464512A CN 109580634 A CN109580634 A CN 109580634A
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CN
China
Prior art keywords
diamond
wire surface
diamond wire
reunited
microns
Prior art date
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Pending
Application number
CN201811464512.8A
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Chinese (zh)
Inventor
张爱平
何晋康
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konca Solar Cell Co Ltd
Original Assignee
Konca Solar Cell Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konca Solar Cell Co Ltd filed Critical Konca Solar Cell Co Ltd
Priority to CN201811464512.8A priority Critical patent/CN109580634A/en
Publication of CN109580634A publication Critical patent/CN109580634A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention provides the confirmation methods that a kind of diamond wire surface diamond is reunited comprising following steps: 1) the scattered error value K of the average diameter D and accumulation diameter accumulated by apparatus measures diamond wire surface diamond;If 2) D >=30 micron, directly judge that diamond agglomeration occurs for diamond wire surface;If 25 microns of 30 microns of < D <, 7 < K < 10 then directly judge that diamond agglomeration occurs for diamond wire surface;If 20 microns of D≤25 micron <, K >=10, then need to judge by scanning electron microscope that diamond agglomeration occurs for diamond wire surface.The confirmation method that above-mentioned diamond wire surface diamond is reunited can quickly, efficiently and accurately judge diamond wire surface with the presence or absence of diamond agglomeration.It not only reduces cutting process interrupt line and silicon chip surface stria and causes partially thin etc. abnormal risks of piece thickness;And improve production efficiency;It ensure that the cut quality of solar silicon wafers.

Description

A kind of confirmation method that diamond wire surface diamond is reunited
Technical field
The invention belongs to the confirmation sides that solar silicon wafers cutting technique more particularly to a kind of diamond wire surface diamond are reunited Method.
Background technique
Currently, the cutting line of mainstream is that hyperfine cutting steel wire does bus, diameter is about 55~65 microns, diamond Molecule inlay on line, be made into diamond cutting secant.But bad coating can be generated in the electroplating process of diamond The bulky grain of problem, such as the agglomeration traits of diamond particles, these aggregations and superposition change the diamond wire in cutting stage by Power situation increases Micro Lub stress, relative to the equally distributed diamond wire of particle, improves cutting torque value.It increases and cuts It cuts broken string and silicon chip surface stria in the process and causes partially thin etc. abnormal risks of piece thickness.
Therefore, how rapidly and accurately to determine that diamond wire surface whether there is diamond agglomeration is those skilled in the art Member's problem in the urgent need to address.
Summary of the invention
The purpose of the present invention is to provide the confirmation methods that a kind of diamond wire surface diamond is reunited, to solve the prior art In the problem of can not rapidly and accurately determining diamond wire surface with the presence or absence of diamond agglomeration.
To achieve this purpose, the present invention adopts the following technical scheme:
A kind of confirmation method that diamond wire surface diamond is reunited comprising following steps:
1) the scattered error value K of the average diameter D and accumulation diameter accumulated by apparatus measures diamond wire surface diamond;
2) judge whether diamond wire surface occurs diamond agglomeration according to the value of D in step 1) and K, specifically sentence Disconnected standard are as follows: if D >=30 micron, directly judge that diamond agglomeration occurs for diamond wire surface, if 25 microns of < D < 30 are micro- Rice;7 < K < 10 then directly judge that diamond agglomeration occurs for diamond wire surface.
Particularly, if 20 microns of D≤25 micron < in the step 2);K >=10 then need to judge gold by scanning electron microscope Diamond agglomeration occurs for rigid line surface.
Particularly, measured in the step 1) by scroll saw instrument diamond wire surface diamond accumulation average diameter D and Accumulate the scattered error value K of diameter, specific measurement method are as follows: diamond wire after cleaning is fixed on Horizontal clamp, root under fixed multiplying power The equivalent particle size diameter mean value D in 5 sections of screen visuals field is measured according to gray value, while calculating scattered error value K.
Beneficial effects of the present invention are the confirmation method energy that the diamond wire surface diamond is reunited compared with prior art It is enough quickly, efficiently and accurately to judge diamond wire surface with the presence or absence of diamond agglomeration.Before being cut, there will be reunion The diamond wire of problem is isolated, and is not only reduced cutting process interrupt line and silicon chip surface stria and is caused piece thickness partially thin etc. Abnormal risk;And improve production efficiency;It ensure that the cut quality of solar silicon wafers.
Specific embodiment
Of the invention for ease of understanding, it is as follows that the present invention enumerates embodiment.Those skilled in the art are it will be clearly understood that the implementation Example is only to aid in the understanding present invention, should not be regarded as a specific limitation of the invention.
In the present embodiment, a kind of confirmation method that diamond wire surface diamond is reunited comprising following steps:
1) the average diameter D of diamond wire surface diamond accumulation and the scattered error value K of accumulation diameter are measured by scroll saw instrument; Specific measurement method are as follows: diamond wire after cleaning is fixed on Horizontal clamp, measures 5 sections according to gray value under fixed multiplying power The equivalent particle size diameter mean value D in the screen visual field, while calculating scattered error value K;
2) judge whether diamond wire surface occurs diamond agglomeration according to the value of D in step 1) and K, specifically sentence Disconnected standard are as follows:
If D >=30 micron, directly judge that diamond agglomeration occurs for diamond wire surface,
If 25 microns of 30 microns of < D <;7 < K < 10 then directly judge that diamond agglomeration occurs for diamond wire surface;
If 20 microns of D≤25 micron <;K >=10 then need to judge by scanning electron microscope that diamond occurs for diamond wire surface Agglomeration.
The Applicant declares that the present invention is explained by the above embodiments detailed process equipment and process flow of the invention, But the present invention is not limited to the above detailed process equipment and process flow, that is, it is above-mentioned detailed not mean that the present invention must rely on Process equipment and process flow could be implemented.It should be clear to those skilled in the art, any improvement in the present invention, Addition, selection of concrete mode of equivalence replacement and auxiliary element to each raw material of product of the present invention etc., all fall within of the invention Within protection scope and the open scope.

Claims (3)

1. the confirmation method that a kind of diamond wire surface diamond is reunited, which is characterized in that itself the following steps are included:
1) the scattered error value K of the average diameter D and accumulation diameter accumulated by apparatus measures diamond wire surface diamond;
2) judge whether diamond wire surface occurs diamond agglomeration according to the value of D in step 1) and K, specific judgement mark It is quasi- are as follows: if D >=30 micron, directly to judge that diamond agglomeration occurs for diamond wire surface, if 25 microns of 30 microns of < D <;7 < K < 10 then directly judges that diamond agglomeration occurs for diamond wire surface.
2. the confirmation method that diamond wire surface diamond as described in claim 1 is reunited, which is characterized in that in the step 2) If 20 microns of D≤25 micron <;K >=10 then need to judge by scanning electron microscope that diamond agglomeration occurs for diamond wire surface.
3. the confirmation method that diamond wire surface diamond as claimed in claim 1 or 2 is reunited, which is characterized in that the step 1) the average diameter D of diamond wire surface diamond accumulation and the scattered error value K of accumulation diameter are measured in by scroll saw instrument, it is specific to survey Amount method are as follows: diamond wire after cleaning is fixed on Horizontal clamp, 5 sections of screen views are measured according to gray value under fixed multiplying power Wild equivalent particle size diameter mean value D, while calculating scattered error value K.
CN201811464512.8A 2018-12-03 2018-12-03 A kind of confirmation method that diamond wire surface diamond is reunited Pending CN109580634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811464512.8A CN109580634A (en) 2018-12-03 2018-12-03 A kind of confirmation method that diamond wire surface diamond is reunited

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811464512.8A CN109580634A (en) 2018-12-03 2018-12-03 A kind of confirmation method that diamond wire surface diamond is reunited

Publications (1)

Publication Number Publication Date
CN109580634A true CN109580634A (en) 2019-04-05

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CN201811464512.8A Pending CN109580634A (en) 2018-12-03 2018-12-03 A kind of confirmation method that diamond wire surface diamond is reunited

Country Status (1)

Country Link
CN (1) CN109580634A (en)

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JP2014178300A (en) * 2013-02-14 2014-09-25 Kobe Steel Ltd Pellet grain size measuring method
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CN106133503A (en) * 2014-03-26 2016-11-16 株式会社斯库林集团 Spheroid evaluation methodology and spheroid evaluating apparatus
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CN108332795A (en) * 2018-02-11 2018-07-27 江苏亿荣新材料科技有限公司 A kind of high-precision diamond wire on-line monitoring device and its monitoring method
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CN108645340A (en) * 2018-05-15 2018-10-12 江苏亿荣新材料科技有限公司 It is a kind of that there is the diamond wire production technology for quantitatively adding sand and on-line monitoring function

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Application publication date: 20190405

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