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CN109427528B - Aluminum permalloy sandwich plate and plasma processing device prepared by applying same - Google Patents

Aluminum permalloy sandwich plate and plasma processing device prepared by applying same Download PDF

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Publication number
CN109427528B
CN109427528B CN201710785979.1A CN201710785979A CN109427528B CN 109427528 B CN109427528 B CN 109427528B CN 201710785979 A CN201710785979 A CN 201710785979A CN 109427528 B CN109427528 B CN 109427528B
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China
Prior art keywords
permalloy
aluminum
layer
plasma processing
sandwich panel
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CN201710785979.1A
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CN109427528A (en
Inventor
刘季霖
王凯麟
吴狄
左涛涛
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN201710785979.1A priority Critical patent/CN109427528B/en
Priority to TW107129416A priority patent/TWI709151B/en
Publication of CN109427528A publication Critical patent/CN109427528A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/017—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of aluminium or an aluminium alloy, another layer being formed of an alloy based on a non ferrous metal other than aluminium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/10—Interconnection of layers at least one layer having inter-reactive properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/202—Conductive
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/718—Weight, e.g. weight per square meter

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

The invention discloses an aluminum permalloy sandwich plate and a plasma processing device prepared by applying the same, wherein the sandwich plate comprises: the high-strength high-temperature-resistant glue layer is arranged between the high-permeability layer and the high-conductivity layer. Wherein, high magnetic permeability layer contains: permalloy; the high conductive layer includes: aluminum or an aluminum alloy. The sandwich plate is bonded by the pressure-sensitive adhesive, so that the cost of the high-conductivity magnetic-conductive composite material is reduced, and the obtained aluminum permalloy sandwich plate has better magnetic conductivity and electric conductivity.

Description

Aluminum permalloy sandwich plate and plasma processing device prepared by applying same
Technical Field
The invention belongs to the field of semiconductors, relates to a sandwich plate, and particularly relates to an aluminum permalloy sandwich plate and a plasma processing device prepared by applying the same.
Background
On a machine station that generates Plasma by using inductive coupling, such as TSV (Through Silicon Vias) and ICP (Inductively Coupled Plasma), a magnetic shielding material is required to shield the interference of an external magnetic field to the Plasma, and a high-permeability material is required, while an RF (Radio Frequency) environment of the Plasma etcher is required to shield an electric field and a high-conductivity material is required.
However, the conductivity of the existing materials with high magnetic conductivity is not high, and the magnetic conductivity of the materials with high conductivity is very low, so that the requirements for shielding a magnetic field and an electric field at the same time cannot be met. The high-conductivity magnetic composite material can be formed by plating a high-conductivity plating layer on the outer surface of the permalloy, but the material base material is the permalloy, the material is thick and expensive, and the method for plating the high-conductivity material on the surface of the permalloy is high in cost.
Disclosure of Invention
The invention aims to provide an aluminum permalloy sandwich plate and a plasma processing device prepared by applying the same.
In order to achieve the above object, the present invention provides an aluminum permalloy sandwich panel comprising: the high-strength high-temperature-resistant glue layer is arranged between the high-permeability layer and the high-conductivity layer.
Wherein, the high magnetic permeability layer contains: permalloy.
Wherein, the high conducting layer comprises: aluminum or an aluminum alloy.
The high-strength high-temperature-resistant adhesive layer comprises: high-strength high-temperature-resistant pressure-sensitive adhesive.
The high-strength high-temperature-resistant pressure-sensitive adhesive comprises: a polyacrylate.
The permalloy comprises the following components: the mass fraction is greater than or equal to 50% of nickel, and the balance is Fe and inevitable impurity elements.
The thickness of the high magnetic conductivity layer is 0.1 mm-1 mm.
The thickness of the high conductive layer is 0.5 mm-5 mm.
The thickness of the high-strength high-temperature-resistant adhesive layer is more than 0 and less than 0.3 mm.
The invention also provides a use of an aluminium permalloy sandwich panel according to the invention, which comprises: the sheet metal part containing the permalloy is processed by cutting, bending and blanking.
The present invention also provides a plasma processing apparatus, comprising: the reaction cavity is defined by the outer wall, and the base is arranged in the reaction cavity and used for supporting the substrate to be processed; the gas supply device is connected with the reaction cavity and is used for conveying reaction gas into the reaction cavity; the radio frequency power source is connected with the reaction cavity and used for applying radio frequency power to the reaction cavity and ionizing reaction gas in the reaction cavity to generate plasma; the outer wall material of the reaction cavity is composed of the aluminum permalloy sandwich plate.
The apparatus is a capacitively coupled plasma processing apparatus or an inductively coupled plasma processing apparatus.
The aluminum permalloy sandwich plate and the plasma processing device prepared by applying the same solve the problem of high cost of the high-conductivity magnetic-conducting composite material prepared by the prior art, and have the following advantages:
(1) according to the sandwich plate, the high-magnetic-permeability layer and the high-conductive layer are bonded together through the high-strength high-temperature-resistant adhesive layer, so that the preparation cost of the sandwich plate is reduced, and the obtained sandwich plate has good magnetic conductivity and electric conductivity;
(2) compared with the high-conductivity magnetic-conductive composite material obtained by plating the high-conductivity plating layer on the outer surface of the permalloy in the prior art, the sandwich plate is thinner, so that the processed sheet metal part is lighter, and the higher and higher requirements of the technical field of semiconductor manufacturing on the material are met;
(3) the sandwich plate is bonded by the high-strength high-temperature-resistant pressure-sensitive adhesive, so that the high-magnetic-conductivity layer and the high-conductive layer are tightly bonded without bubbles, and the high-conductive layer is not easy to fall off from the high-magnetic-conductivity layer.
Drawings
FIG. 1 is a schematic structural view of an aluminum permalloy sandwich panel of the present invention.
FIG. 2 is a schematic structural diagram of a plasma processing apparatus according to the present invention.
Fig. 3 is a schematic structural view of an inductively coupled plasma reactor according to example 4.
Fig. 4 is a schematic structural view of a capacitively-coupled plasma reactor according to example 5.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
As shown in fig. 1, which is a schematic structural view of an aluminum permalloy sandwich panel of the present invention, the sandwich panel comprises: the high-magnetic-permeability high-temperature-resistant high-conductivity layer comprises a high-magnetic-permeability layer 10, a high-conductive layer 20 coated on the high-magnetic-permeability layer 10, and a high-strength high-temperature-resistant glue layer 30.
The high magnetic permeability layer 10 includes: permalloy; the highly conductive layer 20 includes: aluminum or aluminum alloys including (but not limited to): non-heat-treated strengthened aluminum alloys, and cast aluminum alloys.
The high-strength high-temperature-resistant adhesive layer 30 includes: high-strength high-temperature-resistant pressure-sensitive adhesive. The pressure-sensitive adhesive can ensure that no air bubble exists in the high-strength high-temperature-resistant adhesive layer 30 when the high-permeability layer 10 and the high-conductive layer 20 are adhered together, so that the problem that the high-conductive layer 20 is not tightly adhered and easily falls off due to the existence of more air bubbles between the high-permeability layer 10 and the high-conductive layer 20 is solved.
The high-strength high-temperature-resistant pressure-sensitive adhesive 30 includes: a polyacrylate.
The permalloy comprises the following components: the mass fraction is greater than or equal to 50% of nickel, and the balance is Fe and inevitable impurity elements.
The thickness of the high magnetic conductivity layer 10 is 0.1mm to 1 mm.
The thickness of the highly conductive layer 20 is 0.5mm to 5 mm.
The thickness of the high-strength high-temperature-resistant adhesive layer 30 is greater than 0 mm and less than 0.3 mm.
Compared with the high-conductivity magnetic composite material obtained by plating the high-conductivity plating layer on the outer surface of the permalloy in the prior art, the sandwich plate is thinner, so that the processed sheet metal part is lighter, and the requirements of the technical field of semiconductor manufacturing on higher and higher materials are met.
Use of an aluminium permalloy sandwich panel according to the above, which comprises: the sheet metal part containing the permalloy is processed by cutting, bending and blanking.
A plasma processing apparatus, as shown in fig. 2, is a schematic structural diagram of the plasma processing apparatus of the present invention, and the apparatus includes: a reaction chamber 1 which is surrounded by an outer wall and in which a pedestal 11 is arranged for supporting a substrate 12 to be processed; a gas supply device 2 connected to the reaction chamber 1 for supplying a reaction gas into the reaction chamber 1; and the radio frequency power source 3 is connected with the reaction cavity 1 and is used for applying radio frequency power to the reaction cavity 1 and ionizing the reaction gas in the reaction cavity 1 to generate plasma 13. The outer wall material of the reaction chamber 1 is composed of the above-mentioned aluminum permalloy sandwich plate.
The device is a capacitive Coupled Plasma (ICP) processing device or an Inductively Coupled Plasma (CCP) processing device.
The inductively coupled plasma or the capacitively coupled plasma can be used as an ion source to drive the plasma generation device.
Example 1
An aluminum permalloy sandwich panel, comprising: the high-conductivity layer 10 is a high-conductivity layer 20 adhered on the high-conductivity layer 10 through a high-strength high-temperature-resistant adhesive layer 30. Wherein, the high magnetic conductive layer 10 is permalloy (the balance being Fe and inevitable impurity elements) with the mass fraction of nickel being 51%, the high conductive layer 20 is a pure aluminum plate, and the high-strength high-temperature-resistant adhesive layer 30 is polyacrylate pressure-sensitive adhesive.
The thickness of the high magnetic conduction layer 10 is 0.1mm, the thickness of the high conductive layer 20 is 0.5mm, and the thickness of the high-strength high-temperature-resistant adhesive layer 30 is 0.1 mm.
Example 2
An aluminum permalloy sandwich panel, comprising: the high-conductivity layer 10 is a high-conductivity layer 20 adhered on the high-conductivity layer 10 through a high-strength high-temperature-resistant adhesive layer 30. The high-permeability layer 10 is a permalloy (the balance being Fe and inevitable impurity elements) with a mass fraction of 80% of nickel, the high-conductivity layer 20 is a pure aluminum plate, and the high-strength high-temperature-resistant adhesive layer 30 is polyacrylate pressure-sensitive adhesive.
The thickness of the high magnetic conduction layer 10 is 1mm, the thickness of the high conductive layer 20 is 5mm, and the thickness of the high-strength high-temperature-resistant adhesive layer 30 is 0.2 mm.
Example 3
An aluminum permalloy sandwich panel, comprising: the high-conductivity layer 10 is a high-conductivity layer 20 adhered on the high-conductivity layer 10 through a high-strength high-temperature-resistant adhesive layer 30. The high-permeability layer 10 is a permalloy (the balance being Fe and inevitable impurity elements) with a mass fraction of nickel of 80%, the high-conductivity layer 20 is an aluminum alloy which is a non-heat-treatment strengthened aluminum alloy, and the high-strength high-temperature-resistant adhesive layer 30 is a polyacrylate pressure-sensitive adhesive.
The thickness of the high magnetic conduction layer 10 is 0.1mm, the thickness of the high conductive layer 20 is 0.5mm, and the thickness of the high-strength high-temperature-resistant adhesive layer 30 is 0.1 mm.
The aluminum permalloy sandwich plates obtained in the embodiment 1, the embodiment 2 and the embodiment 3 are processed into sheet metal parts containing permalloy in a cutting, bending and punching mode respectively, and the high conductive layer does not fall off under pressure or high temperature in the processing process, so that the aluminum permalloy sandwich plate has better compression resistance and high temperature resistance.
The permeability and the conductivity of the aluminum permalloy sandwich plate obtained in the embodiment 1, the embodiment 2 and the embodiment 3 are tested, the relative permeability of the embodiment 1, the embodiment 2 and the embodiment 3 is 10000-100000, the diagonal resistance of the plate is less than 0.1 ohm, and the aluminum permalloy sandwich plate has high permeability and conductivity. The permalloy plate in the prior art only has good magnetic conductivity and poor conductivity.
Example 4
An inductively coupled plasma reactor, as shown in fig. 3, is a schematic structural diagram of an inductively coupled plasma reactor of embodiment 4, and includes: a vacuum reaction chamber 100 surrounded by a substantially cylindrical reaction chamber outer wall 105, an insulating window 130 disposed at the top of the vacuum reaction chamber 100, an inductive coupling coil 140 disposed on the insulating window 130, a radio frequency power source (RF) 145 disposed on the inductive coupling coil 140, a susceptor 110 and a bias power source 146 disposed at the bottom of the vacuum reaction chamber 100, an electrostatic chuck 115 disposed on the susceptor 110 for supporting and fixing a substrate 120 to be processed, an exhaust pump 125 disposed below the vacuum reaction chamber 100 for exhausting reaction by-products out of the interior of the vacuum reaction chamber 100, and a gas supply device 2 communicating with the vacuum reaction chamber 100 and for supplying a reaction gas.
The vacuum reaction chamber 100 has an upper electrode at the upper portion thereof and a lower electrode at the lower portion thereof, the rf power source 145 is electrically connected to the upper electrode, and the bias power source 146 is electrically connected to the lower electrode.
The reaction chamber outer wall 105 was formed using an aluminum permalloy sandwich plate as in example 1.
The outer wall 105 of the reaction chamber is provided with a gas injection port 150 at an end adjacent to the insulating window 130, and the gas injection port 150 is used for connecting the gas supply device 10 and the vacuum reaction chamber 100.
The rf power of the rf power source 145 drives the inductive coupling coil 140 to generate a strong high frequency alternating magnetic field, so that the low pressure reactant gas is ionized to generate the plasma 160.
The plasma 160 contains a large number of active particles such as electrons, ions, excited atoms, molecules, and radicals, which can react with the surface of the substrate 120 to be processed in various physical and chemical reactions, so that the topography of the surface of the substrate 120 to be processed is changed, i.e., the etching process is completed.
Example 5
A capacitively-coupled plasma reactor as shown in fig. 4, which is a schematic structural view of the capacitively-coupled plasma reactor of example 5, comprising: a vacuum reaction chamber 200 surrounded by a substantially cylindrical reaction chamber outer wall 205, a mounting base 230 disposed at an upper portion of the vacuum reaction chamber 200, a gas shower head 250 and a ground ring 270 disposed on the mounting base 230, a gas supply device 2 communicating with the gas shower head 250 and for supplying a reaction gas to an inside of the vacuum reaction chamber 200, a susceptor 210 disposed at a bottom of the vacuum reaction chamber 200, an electrostatic chuck 215 disposed on the susceptor 210 and for supporting and fixing a substrate 220 to be processed, an exhaust pump 225 disposed below the vacuum reaction chamber 200 and for exhausting a reaction byproduct from the inside of the vacuum reaction chamber 200, an electrode disposed on the vacuum reaction chamber 200, and a radio frequency power source 245 disposed on the electrode.
The reaction chamber outer wall 205 is formed of an aluminum permalloy sandwich plate as in example 1.
The rf power source 245 causes the low pressure reactant gas to be ionized to produce a plasma 260.
The plasma 260 contains a large number of active particles such as electrons, ions, excited atoms, molecules, radicals, etc., which can react with the surface of the substrate to be processed in various physical and chemical ways, so that the topography of the surface of the substrate 220 to be processed is changed, i.e., the etching process is completed.
In the prior art, the material of the outer wall of the cylindrical reaction chamber of the vacuum reaction chamber is usually a metal material, such as aluminum or an aluminum alloy material. With the increasing of the precision requirement of the plasma process, the influence of the external interference magnetic field of the plasma processing device and the geomagnetic field on the plasma processing process is enlarged with the increasing of the precision requirement of the process, and therefore, a high-permeability material capable of shielding the external interference magnetic field while ensuring high conductivity is needed.
After the aluminum permalloy sandwich plate disclosed by the embodiment of the invention is used as the outer wall of the reaction cavity of the plasma processing device, the permalloy is used as a high-permeability layer, so that the influence of an external interference magnetic field and a geomagnetic field on the magnetic field in the reaction cavity can be effectively shielded, the smooth operation of the plasma processing technology in the reaction cavity is ensured, meanwhile, the aluminum or aluminum alloy on the outer layer of the permalloy can be used as the high-permeability layer, so that the electric field in the reaction cavity can be effectively shielded, the safety of equipment is ensured, the electric field outside the reaction cavity is shielded from entering the reaction cavity, and the operation of the technology is interfered.
In conclusion, the aluminum permalloy sandwich plate and the plasma processing device prepared by applying the same are bonded by the high-strength high-temperature-resistant pressure-sensitive adhesive, so that the preparation cost of the sandwich plate is reduced, and the obtained sandwich plate has better magnetic conductivity and electric conductivity.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.

Claims (9)

1. An aluminum permalloy sandwich panel, comprising:
the high magnetic conductivity layer (10), the thickness of the said high magnetic conductivity layer (10) is 0.1 mm-1 mm; a high conductive layer (20) coated on both sides of the high magnetic conductive layer (10),
the high-strength high-temperature-resistant adhesive layer (30) is arranged between the high-permeability layer (10) and the high-conductivity layer (20);
the high magnetic permeability layer (10) comprises: permalloy;
the high conductive layer (20) comprises: aluminum or an aluminum alloy;
the aluminum permalloy sandwich plate is used for forming the outer wall of a reaction cavity (1) of the plasma processing device.
2. The aluminum permalloy sandwich panel according to claim 1, wherein the high strength, high temperature resistant glue layer (30) comprises: high-strength high-temperature-resistant pressure-sensitive adhesive.
3. An aluminium permalloy sandwich panel according to claim 2, characterized in that said high-strength high-temperature-resistant pressure-sensitive adhesive (30) comprises: a polyacrylate.
4. The aluminum permalloy sandwich panel of claim 1, wherein the permalloy comprises the following composition: the mass fraction is greater than or equal to 50% of nickel, and the balance is Fe and inevitable impurity elements.
5. The aluminum permalloy sandwich panel according to claim 1, characterized in that the highly conductive layer (20) has a thickness of 0.5mm to 5 mm.
6. The aluminum permalloy sandwich panel according to claim 1, characterized in that the high-strength, high-temperature resistant glue layer (30) has a thickness greater than 0 and less than 0.3 mm.
7. Use of an aluminium permalloy sandwich panel according to any one of claims 1-6, characterized in that it comprises: the sheet metal part containing the permalloy is processed by cutting, bending and blanking.
8. A plasma processing apparatus, the apparatus comprising:
the reaction chamber (1) is surrounded by an outer wall, and a base (11) is arranged in the reaction chamber and used for supporting a substrate (12) to be processed;
the gas supply device (2) is connected with the reaction cavity (1) and is used for conveying reaction gas into the reaction cavity (1); and
the radio frequency power source (3) is connected with the reaction cavity (1) and is used for applying radio frequency power to the reaction cavity (1) and ionizing the reaction gas in the reaction cavity (1) to generate plasma (13);
characterized in that the material of the outer wall of the reaction chamber (1) consists of an aluminium permalloy sandwich panel according to any one of claims 1-6.
9. The plasma processing apparatus of claim 8, wherein the apparatus is a capacitively-coupled plasma processing apparatus or an inductively-coupled plasma processing apparatus.
CN201710785979.1A 2017-09-04 2017-09-04 Aluminum permalloy sandwich plate and plasma processing device prepared by applying same Active CN109427528B (en)

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CN201710785979.1A CN109427528B (en) 2017-09-04 2017-09-04 Aluminum permalloy sandwich plate and plasma processing device prepared by applying same
TW107129416A TWI709151B (en) 2017-09-04 2018-08-23 Aluminum permalloy sandwich panel, its use and plasma processing device prepared by using the same

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CN201710785979.1A CN109427528B (en) 2017-09-04 2017-09-04 Aluminum permalloy sandwich plate and plasma processing device prepared by applying same

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Citations (4)

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Publication number Priority date Publication date Assignee Title
WO2008091734A1 (en) * 2007-01-25 2008-07-31 3M Innovative Properties Company Electromagnetic sheilding device
CN103155737A (en) * 2010-09-30 2013-06-12 日东电工株式会社 Electromagnetic wave shielding sheet for use in wireless power transmission
CN103839651A (en) * 2012-11-27 2014-06-04 三星电机株式会社 Magnetic sheet of contactless power transmission device
CN204103439U (en) * 2014-09-05 2015-01-14 山东康威通信技术股份有限公司 A kind of communication cable-end radome

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060024451A1 (en) * 2004-07-30 2006-02-02 Applied Materials Inc. Enhanced magnetic shielding for plasma-based semiconductor processing tool

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008091734A1 (en) * 2007-01-25 2008-07-31 3M Innovative Properties Company Electromagnetic sheilding device
CN103155737A (en) * 2010-09-30 2013-06-12 日东电工株式会社 Electromagnetic wave shielding sheet for use in wireless power transmission
CN103839651A (en) * 2012-11-27 2014-06-04 三星电机株式会社 Magnetic sheet of contactless power transmission device
CN204103439U (en) * 2014-09-05 2015-01-14 山东康威通信技术股份有限公司 A kind of communication cable-end radome

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TWI709151B (en) 2020-11-01
TW201913692A (en) 2019-04-01

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