CN109387819A - A kind of laser radar apparatus and its channel gating method - Google Patents
A kind of laser radar apparatus and its channel gating method Download PDFInfo
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- CN109387819A CN109387819A CN201710654507.2A CN201710654507A CN109387819A CN 109387819 A CN109387819 A CN 109387819A CN 201710654507 A CN201710654507 A CN 201710654507A CN 109387819 A CN109387819 A CN 109387819A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
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- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Electromagnetism (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
The invention discloses a kind of laser radar apparatus and its channel gating methods, the device includes: laser beam emitting device, with N number of semiconductor laser, it is arranged in emission array, for emitting N number of emergent light, N number of semiconductor laser is set on M transmit circuit plate of the laser beam emitting device, and M is less than N；Emit microscope group, for adjusting the angle of N number of emergent light；Microscope group is received, for adjusting the angle of incident light；Laser receiver has N number of photoelectric sensor, is arranged in receiving array, for receiving the incident light after reception microscope group adjusting；N-th of semiconductor laser is identical as position of n-th of photoelectric sensor in the receiving array in the position in the emission array, emitting microscope group and receiving microscope group has respective optical path, and the emergent light that n-th of semiconductor laser issues is incident to n-th of photoelectric sensor after object reflects.Mounting process of the present invention is succinct, is easy to implement the low cost and miniaturization of equipment.
Description
Technical field
The present invention relates to multi-channel laser fields of measurement, more particularly to a kind of laser radar apparatus and its channel gating side
Method.
Background technique
It is as shown in Figure 1, 2 the scanning array in the laser radar of U.S. Patent application US8767190B2.
Wherein, motherboard 20 is arranged on frame 22.Multiple transmitting panels 30 are successively plugged on motherboard 20, multiple detection faces
Plate 32 is successively plugged on motherboard 20.Multiple transmitting panels 30 are arranged in vertical, and multiple detection panels 32 are vertically
Setting.It is provided with a transmitter on each transmitting panel 30, a detector is provided in each detection panel 32.
As shown in Fig. 2, the whole fan-shaped setting of multiple detection panel 32, with generate one above the horizon 10 degree to level
30 degree of visual field below line, continuous multiple detection panels successively tilt an angle setting, so that continuous multiple inspections
Panel is surveyed to be sequentially distributed with respect to a central axis.
And multiple transmitting panel 30 is symmetrical set with multiple detection panel 32, multiple transmitting panel 30 is whole
Fan-shaped setting, to generate above the horizon 10 degree to 30 degree below horizontal line visual fields, continuous multiple transmitting panels
An angle setting is successively tilted, so that continuous multiple transmitting panels are sequentially distributed with respect to a central axis.
The defect of the automatically controlled scanning array in the prior art is that during the installation process, each transmitting panel 30 emits
Panel 32 is required to individually to correct it and plugs angle with respect to motherboard 20.In order to obtain accurate scanning result, the reality of the product
In the installation process of border, the error plugged has to reach micron order, and adjusts the angle between two plate faces and be fixed on one
The technique of special angle is also complex.So installation process cumbersome corresponding to this structure, production efficiency is low, at
This height, yield are low.
In addition, each transmitter of this structure or detector are both needed to be separately provided on one panel, required face
Plate quantity is more, increases the weight and volume of system, it is difficult to realize the low cost and miniaturization of equipment.
Summary of the invention
Present invention solves the technical problem that be to provide a kind of laser radar apparatus, so that mounting process is succinct, it is high-efficient,
Yield is high.
Further, volume is reduced, in order to realize the low cost and miniaturization of equipment.
The invention discloses a kind of laser radar apparatus, which includes:
Laser beam emitting device, the laser beam emitting device have N number of semiconductor laser, emission array are arranged in, for sending out
N number of emergent light is penetrated, which is set on M transmit circuit plate of the laser beam emitting device, and M is less than N；
Emit microscope group, for adjusting the angle of N number of emergent light；
Microscope group is received, for adjusting the angle of incident light；
Laser receiver, the laser receiver have N number of photoelectric sensor, receiving array are arranged in, for receiving
Incident light after reception microscope group adjusting；
Wherein, position of n-th of semiconductor laser in the emission array and n-th of photoelectric sensor connect at this
The position received in array is identical, and n=1,2 ... N, N are positive integer, and M is positive integer, which has with the reception microscope group
Respective optical path, so that the emergent light that n-th of semiconductor laser issues is incident to this n-th photoelectricity after object reflects
Sensor.
The laser beam emitting device further comprises:
One or more laser emitting modules, the laser emitting module include the transmit circuit plate, more placed vertically
A semiconductor laser and driving circuit, multiple semiconductor lasers are placed on the transmit circuit plate, the driving circuit
It is connect with multiple semiconductor lasers to drive multiple semiconductor lasers to shine, multiple semiconductor lasers go out light
The light-emitting surface of direction composition is parallel with the transmit circuit plate；
Laser emission control module is connect with the laser emitting module, to control driving circuit driving corresponding half
Conductor laser shines.
Multiple transmit circuit plates of multiple laser emitting module are arranged parallel, and multiple semiconductor lasers are placed in this
The one side edge of transmit circuit plate.
Multiple transmit circuit plates of multiple laser emitting module are divided into multiple rows of, and every row is arranged parallel, multiple semiconductors
Laser is placed in the one side edge of the transmit circuit plate.
The laser beam emitting device further comprises:
At least one laser emitting module, the laser emitting module include one place vertically the transmit circuit plate, this is N number of
Semiconductor laser and driving circuit, N number of semiconductor laser are placed on the transmit circuit plate, and the driving circuit is more with this
A semiconductor laser connection is to drive multiple semiconductor laser to shine, the light direction of each column in the emission array
The light-emitting surface of composition is vertical with the transmit circuit plate；
Laser emission control module is connect with the laser emitting module, to control the driving circuit of the laser emitting module
Corresponding semiconductor laser is driven to shine.
The laser emitting module has one or more driving circuits, and each driving circuit driving is one or more should
Semiconductor laser.
The Laser emission control module is arranged on the transmit circuit plate, alternatively, Laser emission control module setting exists
In control circuit board, which is connected to the transmit circuit plate by connector.
The direction of emergent light of any two after transmitting microscope group adjusting is not identical.
The laser receiver includes:
N number of photoelectric transducer element, each photoelectric transducer element includes the photoelectric sensor and its peripheral circuit；
The circuit board for receiving placed vertically, N number of photoelectric sensor are arranged on the circuit board for receiving；
Sensor array control circuit, for controlling the gating of N number of photoelectric sensor.
The light-emitting surface of N number of semiconductor laser is located on the focal plane of the transmitting microscope group, which is located at should
In the reception image planes for receiving microscope group.
The invention also discloses a kind of channel gating methods applied to the laser radar apparatus, this method comprises:
According to setting order, N number of semiconductor laser is successively gated, when n-th of semiconductor laser is strobed, the
N photoelectric sensor is accordingly strobed.
This method further comprises:
Multiple blocks are divided into N number of semiconductor laser, according to preset first sequence, successively gate the respectively block,
Each semiconductor laser is successively gated according to preset second sequence in each block.
This method further comprises:
Step 1, which shares X row Y column, and in a row, successively gating should for x-th of semiconductor laser group of each column
Semiconductor laser each in xth row in emission array, x=1,2 ... X, X, Y are positive integer；
Step 2, x adds 1, continues to execute step 1；
Alternatively, this method further comprises:
Step 10, which shares X row Y column, and x-th of semiconductor laser group of each column in a row, successively gates
Each semiconductor laser in the emission array in y column, y=1,2 ... Y, X, Y are positive integer；
Step 20, y adds 1, continues to execute step 10；
Alternatively, this method further comprises:
Step 100, gate the 2a+1 semiconductor laser, a adds 1, circulation execution step 100, until 2a+1=N or
2a+1=N-1 executes step 200, a=0,1,2 ...；
Step 200, gate the 2b+2 semiconductor laser, b adds 1, circulation execution step 200, until 2b+2=N or
2b+2=N-1, b=0,1,2 ....
Mounting process of the invention is succinct, high-efficient, and yield is high, is convenient for volume production.Meanwhile the present invention by circuit integration and
The integration and miniaturization of array laser ballistic device is realized in automatically controlled scanning, is reduced system dimension and weight, is easy to implement equipment
Low cost and miniaturization.
Detailed description of the invention
Fig. 1,2 show scanning array schematic diagram in the laser radar of U.S. Patent application US8767190B2.
Fig. 3 A show the structural schematic diagram of laser radar apparatus of the invention.
Fig. 3 B show the structural schematic diagram of an optical path of laser radar apparatus of the invention.
Fig. 4 show the structural schematic diagram of laser beam emitting device of the invention.
Fig. 5 show the structural schematic diagram of another embodiment of laser beam emitting device of the invention.
Fig. 6 show the structural schematic diagram of the another embodiment of laser beam emitting device of the invention.
Fig. 7 show the structural schematic diagram of the another embodiment of laser beam emitting device of the invention.
Fig. 8 A show sequence gated transmission control mode schematic diagram of the invention.
Fig. 8 B show sequence gating of the invention and receives control mode schematic diagram.
Fig. 9 show array laser emitter provided by a specific embodiment of the invention and projection hot spot array example
Figure.
Figure 10 show the structural schematic diagram of laser beam emitting device of the invention.
Figure 11,11A show the arrangement schematic diagram of semiconductor laser and photoelectric sensor of the invention.
Specific embodiment
The realization process that technical solution of the present invention is described below in conjunction with specific embodiment, not as to limit of the invention
System.
The invention discloses a kind of laser radar apparatus, so that mounting process is succinct, high-efficient, yield is high.Meanwhile, it is capable to
Volume is reduced, in order to realize the low cost and miniaturization of equipment.
It is as shown in Figure 3A the structural schematic diagram of laser radar apparatus of the invention, wherein laser radar apparatus is omitted
Other known features.Laser radar apparatus obtains the three-dimensional information of object X in environment by laser scanning.
Laser radar apparatus includes laser beam emitting device 100, transmitting microscope group 60, receives microscope group 70, laser receiver
200。
The laser beam emitting device 100 has N number of semiconductor laser 1 in emission array arrangement, for emitting N number of outgoing
Light.N number of semiconductor laser is set on M transmit circuit plate of the laser beam emitting device 100, and M is less than N, as shown in the figure
It for N=16, M=2, is not limited, the semiconductor laser 1 and transmit circuit plate of other quantity are also in disclosure of the invention
In range.The present invention by by multiple semiconductor laser concentrated settings on transmit circuit plate, to reduce transmit circuit plate
Quantity, compression volume.
Emit microscope group 60, setting is in 100 front of laser beam emitting device, for receiving and adjusting the angle of N number of emergent light.
Microscope group 70 is received, is arranged side by side, and the front of the laser receiver 200 is set, receives with transmitting microscope group 60
Microscope group 70 is used to adjust the angle of incident light.
Laser receiver 200, the laser receiver 200 have N number of photoelectric sensor 6 in receiving array arrangement,
For receiving the incident light after the reception microscope group 70 adjusting.The quantity of photoelectric sensor 6 and the quantity one of semiconductor laser 1
It causes, meanwhile, emission array, the arrangement mode of receiving array are identical.That is, n-th of semiconductor laser is in the hair
It is identical as position of n-th of photoelectric sensor in the receiving array to penetrate the position in array, n=1,2 ... N, N is positive whole
Number.
There are a corresponding photoelectric sensors for each semiconductor laser, that is to say, that no matter semiconductor swashs
How light device arranges, and photoelectric sensor is arranged in the same way, and the emergent light that n-th of semiconductor laser issues is through object
N-th of photoelectric sensor is incident to after reflection, the two cooperates with each other.
The transmitting microscope group 60 is identical with the optical parameter of the reception microscope group 70, meanwhile, emission array relative transmission mirror
The position of group 60 position of microscope group 70 that receives opposite with receiving array is identical, in this way, connecing the transmitting microscope group 60 with this
Receiving microscope group 70 has respective optical path.
It is as shown in Figure 3B the schematic diagram of an optical path of laser radar apparatus of the invention.With from top to bottom, from the right side to
Left sequence is ranked up the semiconductor laser in emission array, meanwhile, with identical sequence to the light in receiving array
Electric transducer is ranked up, then the emergent light that the 13rd semiconductor laser issues in Fig. 3 B, after emitted microscope group 60 is adjusted, is shone
It penetrates on object, the reflection through the object, after receiving the adjusting of microscope group 70, is received by the 13rd photoelectric sensor.
Also within the scope of disclosure of the invention, the working method of other semiconductor lasers is identical with this other sortords.
It is as shown in figs. 4-7 the structural schematic diagram of laser beam emitting device disclosed by the invention.
Laser beam emitting device 100 of the invention include at least one laser emitting module 10, the laser emitting module 10 into
One step includes a transmit circuit plate 3, multiple semiconductor lasers 1 and driving circuit 2.
Multiple semiconductor laser 1 is successively set on the transmit circuit plate 3, which places vertically, and
It is placed on a horizontal body (not shown), in the embodiment of an optimization, multiple semiconductor laser 1 is successively set on
The one side edge of the transmit circuit plate 3, convenient for going out light from the edge of circuit board.
The driving circuit 2 is connect to drive multiple semiconductor laser 1 to shine with multiple semiconductor laser 1.?
In one embodiment, the same driving circuit 2 can drive multiple semiconductor lasers 1.It in another embodiment, can be each partly to lead
One drive circuit 2 is respectively set in body laser 1, is respectively driven.
The bottom surface of multiple semiconductor laser 1 is soldered to transmit circuit plate 3, goes out light perpendicular to the side of bottom surface, that is, more
The light-emitting surface D semiconductor lasers 1 parallel and all with the transmit circuit plate 3 of the light direction composition of a semiconductor laser 1
Light direction towards the same side of the circuit board, be emitted outward from edge.In addition, any two are adjusted through the transmitting microscope group 60
The direction of emergent light afterwards is different.
Specifically, as shown in figure 5,8 semiconductor lasers 1 of longitudinal arrangement and corresponding drive on a transmit circuit plate 3
Dynamic circuit (Fig. 5 does not show the driving circuit).The issued laser of semiconductor laser 1 is emitted by transmitting microscope group 60.8 semiconductors
Laser arranges from top to bottom, successively has at regular intervals, and each spacing can be the same or different.For example, two neighboring
The center spacing of semiconductor laser 1 can be D1, D1, D2, D3, D3, D2 and D1, D1 > D2 > D3 respectively.8 semiconductor lasers
Device left side of transmit circuit plate 3 from Fig. 5 goes out light, and after transmitting microscope group 60 reflects, 8 semiconductor lasers 1 are with respect to AA '
The laser emitting angle of line is different, and successively changes an angle, to form the laser scanning within certain angle range
Laser scanning field of view angle within the scope of field of view angle, such as 20 ° -30 °, to realize the automatically controlled array scanning to target.As it can be seen that
The direction of the optical axis of each semiconductor laser 1 and placement position difference, and respectively correspond a local emission visual field.Each half
The direction of the optical axis of conductor laser 1 and placement position are needed referring to Laser emission light path design ginseng in transmitting microscope group 60 and system
Number is set.
Since the light-emitting surface D that the light direction of semiconductor laser 1 forms is parallel with the transmit circuit plate 3, and multiple half
Conductor laser 1 is located on the same transmit circuit plate 3, so, during the installation process, in order to adjust specific light direction,
It only needs the angle of the AA ' line of the light emission side relative transmission circuit board 3 of adjustment semiconductor laser 1 and realizes welding, adjust
It is whole to certain special angle and be fixed on the special angle technique it is more succinct, high-efficient, yield is high, is convenient for volume production.Meanwhile
Since semiconductor laser 1 is located on the same transmit circuit plate 3, so without being each semiconductor laser such as the prior art
A circuit board is arranged in device 1, and saving a large amount of transmit circuit plate 3 to reduce volume reduces weight, is easy to implement and sets
Standby low cost and miniaturization.
As shown in fig. 6, laser beam emitting device 10 may also include multiple laser emitting modules in another embodiment of the present invention
10, such as four.As shown in fig. 6, being arranged parallel between four, preferably it is arranged in parallel, can also corresponds to and be stacked and consolidate
It is fixed.The light direction of all semiconductor lasers is towards the same side.8 semiconductor lasers on each laser emitting module 10
1 on transmit circuit plate with different spacing stationary arrangements, the emitted mirror of emergent light of any two in 32 semiconductor lasers 1
Group 60 all has respectively different shooting angles after adjusting, and forms 8 rows × 4 column, 32 linear array laser beam emitting devices.Partly lead
The setting angle of body laser 1 can be adjusted according to the optical path parameter of transmitting microscope group 60.For example, each laser emitting module 10
As shown in figure 5, after transmitting microscope group 60 reflects, laser emitting angle respectively not phase of 8 semiconductor lasers with respect to AA ' line
Together, covering of the fan distribution is formed, so that laser emitting is more intensive.
It is illustrated in figure 7 the structural schematic diagram of the laser beam emitting device of another embodiment of the present invention.
As it can be seen that laser beam emitting device 100 includes two rows of laser emitting modules 10 as shown in FIG. 6, light direction court in figure
To the same side.Multiple rows of arrangement of other numbers of rows is also within the scope of disclosure of the invention.It is illustrated in figure 7 64 linear array Laser emissions
The light direction of device, any two semiconductor laser is not identical, and laser is distributed more crypto set.
It further include mode as shown in Figure 10 in addition to the set-up mode of the laser beam emitting device 100 in Fig. 3 A, with Fig. 3 A
Difference be only that, the laser beam emitting device 100 include at least one laser emitting module 10, the laser emitting module 10
The transmit circuit plate 3 placed vertically including one, N number of semiconductor laser are placed on the transmit circuit plate to form this
The light-emitting surface D ' of emission array, the light direction composition of each column in the emission array is vertical with the transmit circuit plate, optics
The quantity and arrangement mode of sensor are identical as semiconductor laser, remaining set-up mode is identical as previous embodiment.?
16 semiconductor lasers 1 can be set on one block of transmit circuit plate 3, then be correspondingly arranged 16 photoelectric sensors, have compressed sharp
The volume of optical radar device, meanwhile, also apply for semiconductor laser 1 documented by CN201720845753.1 using China,
Realize the shooting angle that different semiconductor lasers 1 is set on one piece of circuit board, so that installation process is simple and easy, error
It is lower.Also multiple laser emitting modules 10 can be set, be set side by side, the semiconductor that each laser emitting module is included swashs
Light device collectively constitutes the emission array.
In addition, referring to Fig. 8 A, laser beam emitting device 100 further includes Laser emission control module 5, with all Laser emissions
Module 10 connects, and Laser emission control module 5 can control one or more semiconductor lasers 1 (LD) and its driving circuit 2,
And the driving circuit 2 is controlled according to program setting to drive corresponding semiconductor laser 1 according to predesigned order, successively transmitting swashs
Light.
By the array arrangement of semiconductor laser 1, Laser emission control module 5 divides each semiconductor laser
When control, realize laser scanning to target area.
The Laser emission control module 5 may be provided on the transmit circuit plate 3, alternatively, the Laser emission control module is set
It sets on the control circuit board (not shown) in addition to transmit circuit plate 3, control circuit board is connected to transmitting by connector
Circuit board 3.
High-efficient it is found that mounting process of the invention is succinct by way of above-mentioned laying, yield is high, is convenient for volume production.Together
When, the present invention realizes the integration and miniaturization of array laser ballistic device by circuit integration and automatically controlled scanning, reduces system
Size and weight are easy to implement the low cost and miniaturization of equipment.
As shown in Figure 3A, laser receiver 200 of the invention further comprises:
N number of photoelectric transducer element, each photoelectric transducer element includes the photoelectric sensor 6 and its peripheral circuit
(not shown).Each semiconductor laser and corresponding photoelectric sensor are considered as a channel, each photoelectric transducer element
To receive optical signal, and realize photoelectric signal transformation.The photoelectric sensor of the photoelectric transducer element can be APD, PIN
Or other photoelectric conversion sensitive detection parts.
The circuit board for receiving 7 placed vertically, N number of photoelectric sensor 6 are arranged on the circuit board for receiving 7, periphery electricity
Road may be provided on the circuit board for receiving 7 or auxiliary circuit board 7 '.
Sensor array control circuit 8, for controlling the gating of N number of photoelectric sensor 6, sensor array control electricity
Road 8 may be provided on the circuit board for receiving 7 or auxiliary circuit board 7 ', or be provided separately within a control circuit board (not shown)
On, which is connected to the circuit board for receiving 7 by connector.Sensor array control circuit 8 can control one
Or multiple photoelectric sensors and its peripheral circuit, and it is selected according to predetermined order according to program setting to control the photoelectric sensor
It is logical, alternatively, by multiple 8 co- controlling of sensor array control circuit N number of photoelectric sensors.
The photoelectric sensor 6 synchronizes corresponding gating to the holding of corresponding semiconductor laser 1, that is, when n-th of semiconductor
When laser is strobed, n-th of photoelectric sensor is also strobed accordingly.
N number of photoelectric sensor is located in the reception image planes of the reception microscope group 70, here it is considered that receiving the reception of microscope group 70
Image planes are a flat surface, and are also possible to non-planar.Each photoelectric sensor can receive a branch of from the reflected incidence of object
Light, to carry out photoelectric conversion and to effective measurement of target.
Array laser emitter provided by a specific embodiment of the invention is illustrated in figure 9 to show with projection spot array
Example diagram.As a kind of specific implementation example, the light-emitting surface of all semiconductor lasers 1 (LD), that is, all semiconductor lasers
Device 1 is used for the side of emergent light, is arranged on the transmitting focal plane of transmitting microscope group 60 (here it is considered that the transmitting of transmitting microscope group 60 is burnt
Face is a flat surface), and make the transmitting laser beam horizontal direction for emitting adjacent semiconductor laser 1 on focal plane in β angle, Vertical Square
To in γ angle.
Laser emission control module 5 triggers driving circuit 2, and making the semiconductor laser 1 in each channel, successively gated transmission swashs
Light, transmitting laser is along Laser emission optical path primary optical axis 9, and emitted microscope group 60, and it is corresponding that each laser beam is formed at object M
Discrete light spot, each laser corresponding to the discrete light spot will be received by the photoelectric sensor 6 in laser receiver 200,
The automatically controlled scanning array detection of measured zone is furthermore achieved.The 2nd semiconductor laser 1 issues the 2nd row in figure from right to left
Laser by the 2nd row, the 2nd photoelectric sensor 6 is received from right to left.
Further, Fig. 8 A is a kind of sequence gated transmission control mode schematic diagram, each semiconductor laser and right
The photoelectric sensor answered is considered as a channel, and Laser emission control module 5 successively controls and trigger each driving circuit, and then sequence
Driving guarantees each channel semiconductor laser emitter sequential transmission laser from the 1 to the n-th semiconductor laser, realizes to detection
The automatically controlled scanning of the array of target.According to Laser emission control circuit setting program, according to the sequence of setting to each semiconductor laser
Device and photoelectric sensor are gated, and realize the automatically controlled scanning purpose of array to detection target.
Control mode schematic diagram is received as shown in Figure 8 B for a kind of sequence gating.Sensor array control circuit 8 is according to pre-
First set photoelectricity gating control logic 4 control laser receiver 200 according to the sequence from the 1 to the n-th photoelectric sensor according to
Secondary gating.At the same time, laser beam emitting device 100 also uses the successively shooting sequence from the 1 to the n-th semiconductor laser.
So that n-th of photoelectric sensor is also strobed when n-th of semiconductor laser gating.
Specifically, multiple blocks are divided into N number of semiconductor laser, according to preset first sequence, successively gated
The respectively block successively gates each semiconductor laser according to preset second sequence in each block.
More specifically, in the first gating embodiment, which shares X row Y column, x-th of semiconductor of each column
Laser constitution a line.X-th of the semiconductor laser respectively arranged can be located at identical or different height.It is as shown in Figure 11
The arrangement schematic diagram of semiconductor laser and photoelectric sensor, it is seen then that first semiconductor laser group 1 of each column is at first
Row L1, and so on, last first semiconductor laser of each column forms eighth row L8, the semiconductor laser of every a line can be with
It is in alignment positioned at identical height group, different height can also be located at and form a broken line.
For 100 side of laser beam emitting device, when the channel for carrying out laser radar apparatus gates, can first according to from a left side to
It is right, from right to left or other scheduled sequences, sequence gate L1In each semiconductor laser, then jump next line and follow
Ring executes the step of sequence gating, last line L8After completing gating, continue to jump the first row L1, until receiving end signal.
Time interval between two semiconductor lasers of the adjoining sequentially gated is to preset, and the usual time interval keeps solid
Fixed, each moment only has a semiconductor laser and is strobed.
Row gating order can be L1, L2... ... L8, it is also possible to other preset row gating order.
200 side of laser receiver also arranges to photoelectric sensor according to arrangement mode shown in Figure 11, and according to
Gated fashion same as laser beam emitting device 100, gates all photoelectric sensors, so that n-th of semiconductor laser choosing
When logical, n-th of photoelectric sensor is gated accordingly, and then realize the gating in the channel.
Similarly, different from the row gating of the first gating embodiment in the second gating embodiment, using column in the present embodiment
Gating.Successively each semiconductor laser in one column of gating, jumps next column, it is logical that circulation executes the column selection.The column selection logical time
Sequence can be C1, C2, C3, C4(referring to Figure 11) is also possible to other preset row gating order.
In third gating embodiment, odd number semiconductor laser can also be successively gated by first, then successively gate
The mode of even number semiconductor laser, for example, it is assumed that totally 32 semiconductor lasers, then gating sequence can be 1,3,
5……31、2、4、6……32。
That is, step 100, gates the 2a+1 semiconductor laser, a adds 1, and circulation executes step 100, until 2a+1=N
Or 2a+1=N-1, execute step 200, a=0,1,2 ...；
Step 200, gate the 2b+2 semiconductor laser, b adds 1, circulation execution step 200, until 2b+2=N or
2b+2=N-1, b=0,1,2 ....
In the 4th gating embodiment, by the way of can also being gated using other piecemeals, such as in Figure 11 A, every four and half
Conductor laser is divided into a block, then 8 blocks are shared in figure.
Then each area can be successively gated by preset first sequence, such as the 1st, 3,5,7,2,4,6, the sequences of 8 blocks
Block, can be according to clockwise or counterclockwise or diagonal line or other random sequences are gated, in a block inside each block
After all semiconductor lasers in portion are strobed, then gate next block.
5th gating embodiment, is gated according to the gating sequence set at random.
The gated fashion of deformation based on above embodiments is also in disclosure of the invention range, and the stronger choosing of randomness
Clear and coherent sequence, detection encryption, anti-tampering effect are better.
Laser radar apparatus of the invention is controlled corresponding semiconductor laser and issued and swashed by scheduled gated fashion
Light is radiated on object after transmitting microscope group is adjusted, generates the laser signal of reflection, as incident light beam strikes to connecing
Microscope group is received to focus on the photosurface of corresponding photoelectric sensor after received microscope group is adjusted.Sensor array control circuit 8
According to the scheduled gated fashion, timesharing gates the photoelectric sensor of each corresponding channel, receives the projection hot spot institute on object
The echo-signal of return realizes that the electric separation to detection target leads to array scanning and receives.
Mounting process of the invention is succinct, high-efficient, and yield is high, is convenient for volume production.Meanwhile the present invention passes through to array photoelectric
The logical control of the electric separation of sensor realizes the sequence gating or parallel gating of array photoelectric, improves extraterrestrial target spy
The reception flexibility and reception ability of survey, realize the automatically controlled scanning array detection of object, have abandoned traditional mechanical scanning machine
Structure improves the integration degree of system, improves detection intended recipient efficiency, it is easy to accomplish the miniaturization of system.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art is in technical scope disclosed by the invention, and any changes or substitutions that can be easily thought of,
All it is included within the scope of the present invention.
Claims (13)
1. a kind of laser radar apparatus, which is characterized in that the device includes:
Laser beam emitting device, which has N number of semiconductor laser, is arranged in emission array, N number of for emitting
Emergent light, N number of semiconductor laser are set on M transmit circuit plate of the laser beam emitting device, and M is less than N；
Emit microscope group, for adjusting the angle of N number of emergent light；
Microscope group is received, for adjusting the angle of incident light；
Laser receiver, the laser receiver have N number of photoelectric sensor, are arranged in receiving array, for receiving through being somebody's turn to do
Receive the incident light after microscope group is adjusted；
Wherein, position of n-th of semiconductor laser in the emission array and n-th of photoelectric sensor are in the reception battle array
Position in column is identical, and n=1,2 ... N, N are positive integer, and M is positive integer, which has corresponding with the reception microscope group
Optical path, so that the emergent light that n-th of semiconductor laser issues is incident to this n-th photoelectric sensing after object reflects
Device.
2. device as described in claim 1, which is characterized in that the laser beam emitting device further comprises:
One or more laser emitting modules, the laser emitting module include one place vertically the transmit circuit plate, it is multiple should
Semiconductor laser and driving circuit, multiple semiconductor lasers are placed on the transmit circuit plate, the driving circuit and more
A semiconductor laser connection is to drive multiple semiconductor lasers to shine, the light direction of multiple semiconductor lasers
The light-emitting surface of composition is parallel with the transmit circuit plate；
Laser emission control module is connect with the laser emitting module, drives corresponding semiconductor to control the driving circuit
Laser shines.
3. device as claimed in claim 2, which is characterized in that multiple transmit circuit plates of multiple laser emitting module are parallel
Setting, multiple semiconductor lasers are placed in the one side edge of the transmit circuit plate.
4. device as claimed in claim 2, which is characterized in that multiple transmit circuit plates of multiple laser emitting module are divided into
Multiple rows of, every row is arranged parallel, and multiple semiconductor lasers are placed in the one side edge of the transmit circuit plate.
5. device as described in claim 1, which is characterized in that the laser beam emitting device further comprises:
At least one laser emitting module, the laser emitting module include one place vertically the transmit circuit plate, this N number of partly leads
Body laser and driving circuit, N number of semiconductor laser are placed on the transmit circuit plate, the driving circuit and multiple half
Conductor laser connection is to drive multiple semiconductor laser to shine, the light direction composition of each column in the emission array
Light-emitting surface it is vertical with the transmit circuit plate；
Laser emission control module is connect with the laser emitting module, to control the driving circuit driving of the laser emitting module
Corresponding semiconductor laser shines.
6. the device as described in claim 2 or 5, which is characterized in that the laser emitting module has one or more drivings
Circuit, each driving circuit drive one or more semiconductor lasers.
7. the device as described in claim 2 or 5, which is characterized in that the Laser emission control module is arranged in the transmit circuit
On plate, alternatively, the Laser emission control module is arranged in control circuit board, which is connected to this by connector
Transmit circuit plate.
8. device as described in claim 1, which is characterized in that the side of emergent light of any two after transmitting microscope group adjusting
To not identical.
9. device as described in claim 1, which is characterized in that the laser receiver includes:
N number of photoelectric transducer element, each photoelectric transducer element includes the photoelectric sensor and its peripheral circuit；
The circuit board for receiving placed vertically, N number of photoelectric sensor are arranged on the circuit board for receiving；
Sensor array control circuit, for controlling the gating of N number of photoelectric sensor.
10. the device as described in claim 1 or 9, which is characterized in that the light-emitting surface of N number of semiconductor laser is located at the hair
It penetrates on the focal plane of microscope group, which is located in the reception image planes of the reception microscope group.
11. a kind of channel gating method applied to the laser radar apparatus any in claim 1-10, which is characterized in that
This method comprises:
According to setting order, N number of semiconductor laser is successively gated, when n-th of semiconductor laser is strobed, n-th
Photoelectric sensor is accordingly strobed.
12. method as claimed in claim 11, which is characterized in that this method further comprises:
Multiple blocks are divided into N number of semiconductor laser, according to preset first sequence, successively gate the respectively block, each
Each semiconductor laser is successively gated according to preset second sequence in block.
13. the method as described in claim 11 or 12, which is characterized in that this method further comprises:
Step 1, which shares X row Y column, and x-th of semiconductor laser group of each column in a row, successively gates the transmitting
Semiconductor laser each in xth row in array, x=1,2 ... X, X, Y are positive integer；
Step 2, x adds 1, continues to execute step 1；
Alternatively, this method further comprises:
Step 10, which shares X row Y column, and x-th of semiconductor laser group of each column in a row, successively gates the hair
Each semiconductor laser in array in y column is penetrated, y=1,2 ... Y, X, Y are positive integer；
Step 20, y adds 1, continues to execute step 10；
Alternatively, this method further comprises:
Step 100, the 2a+1 semiconductor laser is gated, a adds 1, and circulation executes step 100, until 2a+1=N or 2a+1
=N-1 executes step 200, a=0,1,2 ...；
Step 200, the 2b+2 semiconductor laser is gated, b adds 1, and circulation executes step 200, until 2b+2=N or 2b+2
=N-1, b=0,1,2 ....
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710654507.2A CN109387819A (en) | 2017-08-03 | 2017-08-03 | A kind of laser radar apparatus and its channel gating method |
| PCT/CN2018/000123 WO2018176972A1 (en) | 2017-04-01 | 2018-03-30 | Laser radar device and channel gating method thereof |
| US16/589,078 US20200033450A1 (en) | 2017-04-01 | 2019-09-30 | Lidar device and channel gating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710654507.2A CN109387819A (en) | 2017-08-03 | 2017-08-03 | A kind of laser radar apparatus and its channel gating method |
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| CN201710654507.2A Pending CN109387819A (en) | 2017-04-01 | 2017-08-03 | A kind of laser radar apparatus and its channel gating method |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291261A (en) * | 1990-02-06 | 1994-03-01 | Motorola, Inc. | Optical object detection system incorporating fiber optic coupling |
| JPH07198850A (en) * | 1993-12-28 | 1995-08-01 | Nikon Corp | Distance measuring device |
| JP2003255247A (en) * | 2002-02-28 | 2003-09-10 | Fuji Xerox Co Ltd | Multi-beam light source, optical scanner, and method and device for forming image |
| CN1516813A (en) * | 2001-04-12 | 2004-07-28 | ����Τ�����ʹ�˾ | Trainable Laser Optical Sensing System for Object Characterization |
| CN104748731A (en) * | 2013-12-27 | 2015-07-01 | 株式会社万都 | Tof Camera For Vehicle And Method For Driving The Same |
| CN105043539A (en) * | 2014-04-23 | 2015-11-11 | 罗伯特·博世有限公司 | A method and device for operating photodetector |
| CN105403892A (en) * | 2015-12-23 | 2016-03-16 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser distance measuring device based on switched capacitor array sampling |
| CN105549029A (en) * | 2016-01-19 | 2016-05-04 | 中国工程物理研究院流体物理研究所 | Illumination scanning stack imaging system and method |
| CN106125064A (en) * | 2015-05-07 | 2016-11-16 | 通用汽车环球科技运作有限责任公司 | Space scanning pattern for array laser radar system |
| CN106125081A (en) * | 2015-05-07 | 2016-11-16 | 通用汽车环球科技运作有限责任公司 | LiDAR with optical communication |
| CN106226757A (en) * | 2016-08-31 | 2016-12-14 | 深圳市速腾聚创科技有限公司 | Three-dimensional laser radar |
| CN106291575A (en) * | 2016-10-25 | 2017-01-04 | 深圳市镭神智能系统有限公司 | A kind of multi-line laser radar range-measurement system and method |
| CN106443699A (en) * | 2016-09-09 | 2017-02-22 | 深圳市砝石激光雷达有限公司 | Multi-combination laser radar device and scanning method thereof |
| CN206975215U (en) * | 2017-08-03 | 2018-02-06 | 北京图来激光科技有限公司 | A kind of laser radar apparatus |
-
2017
- 2017-08-03 CN CN201710654507.2A patent/CN109387819A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291261A (en) * | 1990-02-06 | 1994-03-01 | Motorola, Inc. | Optical object detection system incorporating fiber optic coupling |
| JPH07198850A (en) * | 1993-12-28 | 1995-08-01 | Nikon Corp | Distance measuring device |
| CN1516813A (en) * | 2001-04-12 | 2004-07-28 | ����Τ�����ʹ�˾ | Trainable Laser Optical Sensing System for Object Characterization |
| JP2003255247A (en) * | 2002-02-28 | 2003-09-10 | Fuji Xerox Co Ltd | Multi-beam light source, optical scanner, and method and device for forming image |
| CN104748731A (en) * | 2013-12-27 | 2015-07-01 | 株式会社万都 | Tof Camera For Vehicle And Method For Driving The Same |
| CN105043539A (en) * | 2014-04-23 | 2015-11-11 | 罗伯特·博世有限公司 | A method and device for operating photodetector |
| CN106125081A (en) * | 2015-05-07 | 2016-11-16 | 通用汽车环球科技运作有限责任公司 | LiDAR with optical communication |
| CN106125064A (en) * | 2015-05-07 | 2016-11-16 | 通用汽车环球科技运作有限责任公司 | Space scanning pattern for array laser radar system |
| CN105403892A (en) * | 2015-12-23 | 2016-03-16 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor laser distance measuring device based on switched capacitor array sampling |
| CN105549029A (en) * | 2016-01-19 | 2016-05-04 | 中国工程物理研究院流体物理研究所 | Illumination scanning stack imaging system and method |
| CN106226757A (en) * | 2016-08-31 | 2016-12-14 | 深圳市速腾聚创科技有限公司 | Three-dimensional laser radar |
| CN106443699A (en) * | 2016-09-09 | 2017-02-22 | 深圳市砝石激光雷达有限公司 | Multi-combination laser radar device and scanning method thereof |
| CN106291575A (en) * | 2016-10-25 | 2017-01-04 | 深圳市镭神智能系统有限公司 | A kind of multi-line laser radar range-measurement system and method |
| CN206975215U (en) * | 2017-08-03 | 2018-02-06 | 北京图来激光科技有限公司 | A kind of laser radar apparatus |
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US12399257B2 (en) | 2019-04-26 | 2025-08-26 | Hesai Technology Co., Ltd. | Lidar and detection apparatus thereof |
| CN110459951A (en) * | 2019-07-31 | 2019-11-15 | 上海禾赛光电科技有限公司 | Laser, laser emitting board assembly, laser radar and laser packaging method |
| CN113193471A (en) * | 2019-07-31 | 2021-07-30 | 上海禾赛科技有限公司 | Laser, laser emitting board assembly, laser radar and laser packaging method |
| CN113866784B (en) * | 2019-08-08 | 2023-02-03 | 上海禾赛科技有限公司 | Laser radar and control method thereof |
| CN113866784A (en) * | 2019-08-08 | 2021-12-31 | 上海禾赛科技有限公司 | Laser radar and control method thereof |
| CN110579751A (en) * | 2019-08-27 | 2019-12-17 | 上海禾赛光电科技有限公司 | Transmitting system applicable to laser radar, laser radar and laser transmitting method |
| CN110940988A (en) * | 2019-11-01 | 2020-03-31 | 深圳市镭神智能系统有限公司 | Laser radar receiving system and laser radar |
| CN110940988B (en) * | 2019-11-01 | 2021-10-26 | 深圳市镭神智能系统有限公司 | Laser radar receiving system and laser radar |
| CN110927734B (en) * | 2019-11-24 | 2024-03-08 | 深圳奥锐达科技有限公司 | Laser radar system and anti-interference method thereof |
| CN110927734A (en) * | 2019-11-24 | 2020-03-27 | 深圳奥锐达科技有限公司 | Laser radar system and anti-interference method thereof |
| WO2022016380A1 (en) * | 2020-07-21 | 2022-01-27 | 深圳市速腾聚创科技有限公司 | Laser radar and autonomous driving device |
| WO2022141634A1 (en) * | 2021-01-04 | 2022-07-07 | 深圳市大疆创新科技有限公司 | Laser emitting device, laser ranging device and movable platform |
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