CN109301053A - A kind of quantum dot LED packaging structure and manufacturing method thereof - Google Patents
A kind of quantum dot LED packaging structure and manufacturing method thereof Download PDFInfo
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- CN109301053A CN109301053A CN201811332768.3A CN201811332768A CN109301053A CN 109301053 A CN109301053 A CN 109301053A CN 201811332768 A CN201811332768 A CN 201811332768A CN 109301053 A CN109301053 A CN 109301053A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 54
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011521 glass Substances 0.000 claims abstract description 111
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 238000007789 sealing Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 39
- 238000005538 encapsulation Methods 0.000 claims description 26
- 239000000741 silica gel Substances 0.000 claims description 23
- 229910002027 silica gel Inorganic materials 0.000 claims description 23
- 239000003822 epoxy resin Substances 0.000 claims description 20
- 229920000647 polyepoxide Polymers 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004593 Epoxy Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
Landscapes
- Led Device Packages (AREA)
Abstract
本发明公开了一种量子点LED封装结构，包括支架以及LED芯片，支架的表面设置有碗杯，碗杯的顶部设置有内凹台阶，LED芯片设置在碗杯的底面中间，内凹台阶内设置有量子玻璃组件，量子玻璃组件两端通过硅胶‑环氧树脂密封层封装在内凹台阶内，量子玻璃组件包括上玻璃层和下玻璃层，上玻璃层和下玻璃层之间设置有量子点层；其制备方法：步骤一、制备碗杯上设置有内凹台阶的支架，并在碗杯中封装LED芯片；步骤二、通过硅胶‑环氧树脂密封端封装设置在内凹台阶中的量子玻璃组件的下玻璃层，并在下玻璃层表面涂覆量子点层后，通过上玻璃层压实，再封装上玻璃层；步骤三、将下玻璃层和碗杯组成的空腔内抽真空后，进行真空烘烤，实现了量子点层和芯片内部的良好密闭性并阻绝水氧。
The invention discloses a quantum dot LED packaging structure, comprising a bracket and an LED chip. A bowl is arranged on the surface of the bracket, a concave step is arranged on the top of the bowl, the LED chip is arranged in the middle of the bottom surface of the bowl, and the inner concave step is inside A quantum glass component is provided, and both ends of the quantum glass component are encapsulated in the concave steps by a silicone-epoxy sealing layer. The quantum glass component includes an upper glass layer and a lower glass layer, and a quantum glass is arranged between the upper glass layer and the lower glass layer. point layer; its preparation method: Step 1, prepare a bracket with concave steps on the bowl, and encapsulate the LED chip in the bowl; The lower glass layer of the quantum glass component, and after the quantum dot layer is coated on the surface of the lower glass layer, the upper glass layer is compacted, and then the upper glass layer is encapsulated; Step 3, the cavity formed by the lower glass layer and the bowl is evacuated Then, vacuum baking is performed to achieve good airtightness between the quantum dot layer and the inside of the chip and block water and oxygen.
Description
Technical field
The present invention relates to LED encapsulation field, specially a kind of quantum dot LED encapsulation structure and its manufacturing method.
Background technique
With the raising of national economy level, people are to the life of high-quality also increasingly demand.Quanta point material conduct
A kind of novel luminescent material is applied to the equipment such as illumination or display, because its excite spectrum width, monochromaticjty be good, glow peak wavelength can
It adjusts, high conversion efficiency, can be realized effective promotion to photochromic stabilization (control accurate of spectrum) and backlight product colour gamut, be used in combination
To make up or substitute deficiency of the rare earth doping fluorescent powder in energy level distribution and luminous efficiency, more before economic advantages and application
Scape.
However, existing quanta point material water oxygen stability is poor, it is conventional to encapsulate the encapsulation side that the lower service life is short, failure is fast, common
Formula can not achieve the effective protection to material, and existing quantum dot application only rests on the diaphragm stage, and the dosage of material is big, device
Suitability is poor, and yield and yield are lower, and traditional LED encapsulation method has the following deficiencies:
(1) quantum dot is affected with material property of the water oxygen after chip package to quantum dot, and quantum dot is caused to encapsulate
The light efficiency of device is poor, and LED chip light source, when carrying out light projection, the light reflection at edge and overlapping phenomenon are more tight
Weight, so that the light projection that LED chip generates is uneven；
(2) encapsulating structure of existing quantum dot encapsulation is difficult to apply on high power device.
Summary of the invention
In order to overcome the shortcomings of prior art, the present invention provides a kind of quantum dot LED encapsulation structure and its manufacturer
Method can effectively solve the problem of background technique proposes.
The technical solution adopted by the present invention to solve the technical problems is:
A kind of quantum dot LED encapsulation structure and its manufacturing method, including bracket and LED chip, the surface of the bracket
It is provided with bowl, concave step is provided at the top of the bowl, the LED chip is arranged among the bottom surface of bowl, described
Quantum glass assembly is provided in concave step, quantum glass assembly both ends pass through silica gel-epoxy resin sealant encapsulation
In concave step, the quantum glass assembly includes upper glassy layer and lower ply of glass, the upper glassy layer and lower ply of glass it
Between be provided with quantum dot layer.
Further, the junction of the concave step and bowl is provided with step edge, under the quantum glass assembly
The both ends Da of glassy layer is connected in step edge, and the last single order platform surface of the step edge is provided with half slot.
Further, the silica gel-epoxy resin sealant includes independent layer of silica gel and epoxy resin layer.
Further, the thickness of the quantum dot layer is between 100~500 μm, and the quantum dot layer can also with it is glimmering
Light powder forms combination layer, and the upper glassy layer and lower ply of glass are in the same size, and the thickness of upper glassy layer and lower ply of glass about 50~
300μm。
Further, the both ends of the upper glassy layer and lower ply of glass form opposite V-shaped chamfering, and the V-shaped
The top of chamfering is on the extended line at the both ends of the longitudinal section of bowl.
A kind of manufacturing method of quantum dot LED encapsulation structure, characterized by the following steps:
Step 1: being provided with the bracket of concave step in preparation bowl, and the packaging LED chips in bowl；
Step 2: being encapsulated under the quantum glass assembly being arranged in concave step by silica gel-epoxy resin sealed end
Glassy layer, and after lower ply of glass surface coats quantum dot layer, it is compacted by upper glassy layer, then encapsulate glassy layer；
Step 3: vacuum bakeout is carried out after vacuumizing in the cavity of lower ply of glass and bowl composition.
Further, in step 1, the bracket that concave step is provided in bowl, the size and amount of concave step are prepared
The size of sub- glass assembly is identical, when the size of quantum glass assembly is identical with the upper surface area of bracket, in step 2,
Independent encapsulation is carried out respectively between the quantum dot layer and lower ply of glass and bracket between upper glassy layer and lower ply of glass.
Further, when the size of quantum glass assembly is identical with the upper surface area of bracket, upper glassy layer and lower glass
The both ends of glass layer are right angle corner.
Compared with prior art, the beneficial effects of the present invention are:
This structure reduces the dosage of quanta point material on the basis of guaranteeing light homogeneity out；The structure at the same time
Isolation water oxygen sealing is realized, to reduce the failure of quantum dot and chip, improves the stability of device；In addition, the structure mentions
The high utilization rate to chip light emitting, improves light efficiency, bears power capability, device suitability and service life, simple process,
Less investment, at low cost, yield is high, economizes on resources more environmentally friendly.
Detailed description of the invention
Fig. 1 is overall structure diagram of the invention；
Fig. 2 is that direct layer of silica gel of the invention encapsulates quantum glass assembly structural schematic diagram；
Fig. 3 encapsulates quantum glass assembly structural schematic diagram by layer of silica gel and epoxy resin layer to be of the invention respectively；
Fig. 4 is that the end edge of quantum glass assembly of the invention is right angle package structure diagram；
Fig. 5 is step edge enlarged structure schematic diagram of the invention.
Figure label:
1- bracket；2-LED chip；3- bowl；4- concave step；5- quantum glass assembly；6- silica gel-epoxy resin sealing
Layer；7- step edge；8- half slot；
The upper glassy layer of 501-；502- lower ply of glass；503- quantum dot layer；504-V font chamfering；
601- layer of silica gel；602- epoxy resin layer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1:
As shown in Figure 1, the present invention provides a kind of quantum dot LED encapsulation structure, including bracket 1 and LED chip 2, branch
The surface of frame 1 is provided with bowl 3, and the top of bowl 3 is provided with concave step 4, and LED chip 2 is arranged in the bottom surface of bowl 3
Between, quantum glass assembly 5 is provided in concave step 4,5 both ends of quantum glass assembly pass through silica gel -6 envelope of epoxy resin sealant
In concave step 4, quantum glass assembly 5 includes upper glassy layer 501 and lower ply of glass 502, upper glassy layer 501 and lower glass
Quantum dot layer 503 is provided between layer 502.
It further illustrates, the junction of concave step 4 and bowl 3 is provided with step edge 7, the lower glass of quantum glass assembly 5
The both ends Da of glass layer 502 is connected in step edge 7, and the last single order platform surface of step edge 7 is provided with half slot 8.
Silica gel of the invention-epoxy resin sealant 6 includes independent layer of silica gel 601 and epoxy resin layer 602.
Wherein, the thickness of quantum dot layer 503 is between 100~500 μm, and quantum dot layer 6 can also be formed with fluorescent powder
Combination layer, upper glassy layer 501 and lower ply of glass 502 are in the same size, and the thickness about 50 of upper glassy layer 501 and lower ply of glass 502~
300μm。
The both ends of upper glassy layer 501 and lower ply of glass 502 form opposite V-shaped chamfering 504, and V-shaped chamfering 504
Top is on the extended line at the both ends of the longitudinal section of bowl 3；
The present invention provides three kinds of LED encapsulation structures:
A) as shown in Fig. 2, being arranged quantum glass assembly 5 in concave step 4, while quantum dot layer 503, lower ply of glass
Identical with the area of upper glassy layer, the both ends of quantum glass assembly 5 and lower ply of glass 502 and 7 contact position of step edge pass through silicon
Glue-line 601 directly encapsulates；
B) as shown in Fig. 1 or Fig. 3, quantum glass assembly 5 is arranged in concave step 4, while 503 area of quantum dot layer
It is slightly less than glassy layer 501 and lower ply of glass 502, the both ends of quantum dot layer 503 pass through epoxy resin layer 602 and upper glassy layer
501, lower ply of glass 502 is packaged together, and lower ply of glass 502 is packaged with 7 contact surface of step edge by layer of silica gel 601, together
When the opposite end of glassy layer 502 and lower ply of glass 501 formed V-shaped chamfering 504；
C) as shown in figure 4, setting 5 lower surface of quantum glass assembly is identical with the upper surface of bracket 1, i.e. quantum glass assembly
5 lower ply of glass 502 keeps consistent with the both ends of bracket 1, and the both ends of quantum dot layer 503 pass through epoxy resin layer 602 and upper glass
Glass layer, lower ply of glass are packaged together, and lower ply of glass 502 is packaged with 7 contact surface of step edge by layer of silica gel 601.
The present invention carries out chamfering in the LED encapsulation process under b) structure, to upper glassy layer 501 and lower ply of glass 502, makes
The throw light of LED chip 2 is obtained when entering quantum glass assembly 5, can be extended along the direction of chamfering, so as to avoid turning
Locate the generation of veiling glare, so that light projection is softer, the edge projection light of LED is more uniform；
Meanwhile step edge 7 is set in the junction of concave step 4 and bowl 3, when carrying out the coating of layer of silica gel 601, overflow
The silica gel of lower ply of glass 502 out is under the effect of gravity nature fluidised form in step edge 7, and the silica gel of spilling will enter half slot
In 8, and the setting of half slot 8, so that extra layer of silica gel 601 is coated uniformly on the surface of step edge 7, to prevent spilling
The diffusing reflection and refraction that layer of silica gel 601 generates.
Embodiment 2:
A kind of manufacturing method of quantum dot LED encapsulation structure, characterized by the following steps:
Step 1: being provided with the bracket of concave step in preparation bowl, and the packaging LED chips in bowl；
Step 2: being encapsulated under the quantum glass assembly being arranged in concave step by silica gel-epoxy resin sealed end
Glassy layer, and after lower ply of glass surface coats quantum dot layer, it is compacted by upper glassy layer, then encapsulate glassy layer；
Step 3: vacuum bakeout is carried out after vacuumizing in the cavity of lower ply of glass and bowl composition.
In step 1, the bracket that concave step is provided in bowl, the size and quantum glass group of concave step are prepared
The size of part is identical, when the size of quantum glass assembly is identical with the upper surface area of bracket, in step 2, to upper glass
Independent encapsulation is carried out respectively between quantum dot layer and lower ply of glass and bracket between layer and lower ply of glass.
When the size of quantum glass assembly is identical with the upper surface area of bracket, the both ends of upper glassy layer and lower ply of glass
For right angle corner.
It is preferable to be coated heatproof, good airproof performance and light transmission in step 2 by the structure of counter structure a) for bracket left and right ends
Layer of silica gel, then the lower ply of glass of suitable dimension is put into the concave step part of bracket, the quantum dot layer of specific wavelength is equal
Even is coated in above lower ply of glass, will be covered above its quantum dot with the upper glassy layer of another same specification, the amount of making
Son point layer is connect well with upper glassy layer and lower ply of glass；
Bracket both ends are coated epoxy resin or heatproof, good airproof performance and thoroughly in step 2 by the structure of counter structure b)
The preferable layer of silica gel of light, then the lower ply of glass of suitable dimension is put into the concave step part of bracket, then by lower ply of glass or so
Both ends coating epoxy resin add QD or other can with light transmission have high leakproofness, heatproof, transparent silica gel, by specific wavelength
Quantum dot layer is uniformly coated in above lower ply of glass, by above its quantum dot layer with the upper glassy layer of another same specification into
Row covering, connect quantum dot layer with upper lower ply of glass and well；
Bracket left and right ends are coated epoxy resin or other can be with light transmissions by the structure of counter structure b) in step 2
There is high leakproofness, heatproof, transparent layer of silica gel, then the lower ply of glass of suitable dimension is put on bracket, in lower ply of glass
Both ends coating has heatproof, sealing, the preferable silica gel of light transmission, then the quantum dot of specific wavelength is uniformly coated in lower ply of glass
On, will be covered above its quantum dot with the upper glassy layer of other same specification, make both ends layer of silica gel by upper lower ply of glass and
It is attached.
It is arranged 80~200 DEG C of temperature according to the specific ingredient of glue material, toasts about 2~5 hours, and dry under vacuum conditions
It is roasting, solidify silica gel, finally obtains the quantum dot packaging with preferably isolation water oxygen ability；The glassy layer of the device, thoroughly
Bright silica gel has good airtightness, has preferably obstructed the water oxygen etc. in air, carries out to internal quantum dot and chip
Good enclosed package, to improve the reliability of device.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, the present embodiments are to be considered as illustrative and not restrictive, and the scope of the present invention is by appended power
Benefit requires rather than above description limits, it is intended that all by what is fallen within the meaning and scope of the equivalent elements of the claims
Variation is included within the present invention.Any reference signs in the claims should not be construed as limiting the involved claims.
Claims (8)
1. a kind of quantum dot LED encapsulation structure, including bracket (1) and LED chip (2), it is characterised in that: the bracket (1)
Surface be provided with bowl (3), be provided with concave step (4) at the top of the bowl (3), the LED chip (2) is arranged in bowl
Among the bottom surface of cup (3), it is provided with quantum glass assembly (5) in the concave step (4), the quantum glass assembly (5) two
End is encapsulated in concave step (4) by silica gel-epoxy resin sealant (6), and the quantum glass assembly (5) includes upper glass
Layer (501) and lower ply of glass (502), are provided with quantum dot layer between the upper glassy layer (501) and lower ply of glass (502)
(503)。
2. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the concave step (4) and bowl
The junction of cup (3) is provided with step edge (7), and the both ends Da of the lower ply of glass (502) of the quantum glass assembly (5) is connected in rank
On terraced side (7), the last single order platform surface of the step edge (7) is provided with half slot (8).
3. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the silica gel-epoxy resin is close
Sealing (6) includes independent layer of silica gel (601) and epoxy resin layer (602).
4. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the quantum dot layer (503)
Thickness is between 100~500 μm, and the quantum dot layer (6) can also form combination layer, the upper glassy layer with fluorescent powder
(501) and lower ply of glass (502) is in the same size, about 50~300 μm of the thickness of upper glassy layer (501) and lower ply of glass (502).
5. a kind of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: the upper glassy layer (501) and
The both ends of lower ply of glass (502) form opposite V-shaped chamfering (504), and the top of the V-shaped chamfering (504) is in bowl
(3) on the extended line at the both ends of longitudinal section.
6. a kind of manufacturing method of quantum dot LED encapsulation structure according to claim 1, it is characterised in that: including as follows
Step:
Step 1: being provided with the bracket of concave step in preparation bowl, and the packaging LED chips in bowl；
Step 2: the lower glass for the quantum glass assembly being arranged in concave step by silica gel-epoxy resin sealed end encapsulation
Layer, and after lower ply of glass surface coats quantum dot layer, it is compacted by upper glassy layer, then encapsulate glassy layer；
Step 3: vacuum bakeout is carried out after vacuumizing in the cavity of lower ply of glass and bowl composition.
7. a kind of manufacturing method of quantum dot LED encapsulation structure according to claim 6, it is characterised in that: in step 1
In, the bracket that concave step is provided in bowl is prepared, the size of concave step is identical with the size of quantum glass assembly, equivalent
When the size of sub- glass assembly and the identical upper surface area of bracket, in step 2, between upper glassy layer and lower ply of glass
Quantum dot layer and lower ply of glass and bracket between carry out independent encapsulation respectively.
8. a kind of manufacturing method of quantum dot LED encapsulation structure according to claim 7, it is characterised in that: when quantum glass
When the size of glass component and the identical upper surface area of bracket, the both ends of upper glassy layer and lower ply of glass are right angle corner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811332768.3A CN109301053B (en) | 2018-11-09 | 2018-11-09 | A quantum dot LED packaging structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811332768.3A CN109301053B (en) | 2018-11-09 | 2018-11-09 | A quantum dot LED packaging structure and manufacturing method thereof |
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| CN109301053A true CN109301053A (en) | 2019-02-01 |
| CN109301053B CN109301053B (en) | 2024-07-19 |
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|---|---|---|---|---|
| CN111987206A (en) * | 2019-05-23 | 2020-11-24 | 易美芯光（北京）科技有限公司 | Quantum dot LED package device and manufacturing method |
| CN112164743A (en) * | 2020-09-27 | 2021-01-01 | 深圳Tcl新技术有限公司 | A backlight module and a display device |
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| US20180158996A1 (en) * | 2016-03-30 | 2018-06-07 | Shenzhen Jufei Optoelectronics Co., Ltd. | Packaging method for high gamut white light quantum dot led |
| CN107180902A (en) * | 2016-11-25 | 2017-09-19 | 惠州市华量半导体有限公司 | LED lamp bead and LED/light source |
| JP2018125368A (en) * | 2017-01-31 | 2018-08-09 | スタンレー電気株式会社 | Ultraviolet emitting device and ultraviolet irradiating device |
| JP6415765B1 (en) * | 2017-11-06 | 2018-10-31 | ルーメンス カンパニー リミテッド | LED package |
| CN208873757U (en) * | 2018-11-09 | 2019-05-17 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111987206A (en) * | 2019-05-23 | 2020-11-24 | 易美芯光（北京）科技有限公司 | Quantum dot LED package device and manufacturing method |
| CN112164743A (en) * | 2020-09-27 | 2021-01-01 | 深圳Tcl新技术有限公司 | A backlight module and a display device |
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