CN109167578A - A kind of ultra-wideband low-noise amplifier with active inductance - Google Patents
A kind of ultra-wideband low-noise amplifier with active inductance Download PDFInfo
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- CN109167578A CN109167578A CN201810883027.8A CN201810883027A CN109167578A CN 109167578 A CN109167578 A CN 109167578A CN 201810883027 A CN201810883027 A CN 201810883027A CN 109167578 A CN109167578 A CN 109167578A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
本发明公开了一种带有源电感的超宽带低噪声放大器，实现了超宽带和超低噪声。该带有源多路反馈的超宽带微波低噪声放大器包括输入模块(1)、放大模块(2)和反馈支路(3)。本发明中在输入端引入有源电感来实现输入匹配，所使用的有源电感由NMOS晶体管构成的源级跟随器、负载及源级反馈电阻组成。在放大模块堆叠NMOM和PMOS构成电流复用，将信号交流耦合接入NMOS和PMOS的栅端，来提供低噪声放大器的增益，降低低噪声放大器的直流功耗。此外，在输出端和有源电感之间引入阻性负反馈支路，进一步拓宽了低噪声放大器的带宽。本发明结构简单，易集成，占用芯片面积小。
The invention discloses an ultra-wideband low-noise amplifier with an active inductor, which realizes ultra-wideband and ultra-low noise. The ultra-wideband microwave low-noise amplifier with active multiple feedback comprises an input module (1), an amplification module (2) and a feedback branch (3). In the present invention, an active inductor is introduced at the input end to realize input matching, and the active inductor used is composed of a source-level follower composed of NMOS transistors, a load and a source-level feedback resistor. Stacking NMOM and PMOS in the amplifying module forms current multiplexing, and AC-couples the signal to the gate terminals of NMOS and PMOS to provide the gain of the low-noise amplifier and reduce the DC power consumption of the low-noise amplifier. In addition, the introduction of a resistive negative feedback branch between the output and the active inductor further widens the bandwidth of the LNA. The invention has a simple structure, is easy to integrate, and occupies a small chip area.
Description
Technical field
The invention belongs to technical field of radio frequency integrated circuits, and in particular to a kind of superwide band low noise with active inductance is put
Big device has the characteristics that broadband, low noise and low-power consumption.
Background technique
Amplifier circuit in low noise is widely used, right as the chopped-off head circuit of wireless communication receiver
The overall performance of receiver link plays a crucial role.
Coming with the 5G epoch, distinct communication standards continue to bring out, and industry is towards high-performance, low cost, low function
Consumption and function are integrated etc. is constantly advanced.Low-noise amplifier is also more and more studied and is closed as nucleus module
Note, industry require also to be continuously improved to the design objective of low-noise amplifier.Requirement to its compatibility a, so that low noise
Amplifier circuit allows for working on wider frequency band；To the requirement that it can work long hours, so that low-power consumption becomes
Another pursuit of low-noise amplifier design；Its cost is considered, it is desirable that the chip area of low-noise amplifier cannot mistake
Greatly, so that yields declines.Common source enlarged structure that typical ultra wide band low-power consumption low-noise amplifier is generally fed back using band,
Total grid enlarged structure, distributed frame with mutual conductance enhancing and multistage enlarged structure etc., may be implemented preferable gain and bandwidth
Demand.In addition, the coupling of noise cancellation, cross capacitance, multiple feedback technology etc., which become low-noise amplifier, promotes bandwidth and increasing
The major technique and improvement project of beneficial performance.In power consumption control, the technologies such as stacked structure, subthreshold value biasing, low-voltage voltage
Good research direction is provided for the reduction of power consumption.In recent years, the design of low-noise amplifier is primarily upon in multinomial technology
With the optimization design in manufacturing process, how the designing technique of low-noise amplifier to be preferably used in combination, so that
Design reaches the figure of merit, is the main pursuit of current low-noise amplifier design.
Summary of the invention
The object of the present invention is to provide a kind of ultra-wideband low-noise amplifiers with active inductance.By using active inductance
The source level follower branch of composition inputs matching properties to realize and be promoted the broadband of low-noise amplifier.The use of LC network,
The bandwidth of low-noise amplifier has been widened in the influence for counteracting part high-frequency parasitic capacitor.Stack NMOS and PMOS transistor with
The main amplification module that common-mode feedback resistor collectively forms, improves the gain of low-noise amplifier, reduces DC power.This
Outside, the introducing of RC series negative feedback branch further stabilizes the gain of amplifier, has widened bandwidth of operation.The band is with active
The ultra-wideband low-noise amplifier of inductance can be used in the systems such as LTE, BLE, RFID and 5G mobile communication receiving front-end circuit.
For this purpose, the purpose of the present invention is be achieved through the following technical solutions: a kind of ultra wide band low noise with active inductance
Acoustic amplifier, including input module, amplification module and feedback branch, wherein
1. input module is by NMOS transistor NM1, capacitance C1, capacitor C2With inductance L1LC network, the source level of composition are anti-
Feed resistance R1, the big resistance R of biasing3And load resistance R2It constitutes, to provide broadband input matching.NM1For source level follower group
State, input signal pass through input capacitance C1AC coupled is to NM1Source, and by by C2And L1The series LC net of composition
Network coupling input is to NM2Grid end.NM1Drain terminal connection load R2It is connected with power vd D, NM1Source pass through feedback resistance R1
Ground connection.The effect of LC network is to offset part NM1High-frequency parasitic capacitor, widen the bandwidth of LNA, R3Connect NM1Grid end and partially
Set voltage Vbias1, for being NM1Bias voltage is provided.
2. amplification module is by NMOS transistor NM2, PMOS transistor PM1, capacitance C4, the big resistance R of biasing6And altogether
Mould feedback resistance R5It constitutes.NM2And PM1For common-source amplifier configuration, stacked structure.C4It is separately connected NM2And PM1Grid end, make
Pass through the grid end of the radio-frequency input signals AC coupled of LC to two stacking amplifiers.NM2And PM1Drain terminal be connected directly, R5Even
Meet PM1Grid end and NM2、PM1Public drain terminal, constitute common-mode feedback, provide amplification load.NM2Drain terminal connection output blocking
Capacitor C5, the radiofrequency signal by amplification is exported.R6Connect NM1Grid end and bias voltage Vbias1, for being NM2It provides inclined
Set voltage.
3. feedback branch is by capacitor C3With resistance R4It is in series.It is connected across NM2Drain terminal and NM1Grid end between, formed
Negative-feedback branch plays the role of widening bandwidth of operation, constant gain.
Compared with prior art, the invention has the following advantages:
1. active inductance is used to match branch as input, ultra wide band input matching is realized.
2. offsetting high-frequency parasitic effect caused by active inductance branch using LC network, bandwidth of operation has been widened.
3. the use for stacking enlarged structure provides biggish gain and lower DC power.
The introducing of 4.RC feedback branch stabilizes gain amplifier, has further widened bandwidth of operation.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the ultra-wideband low-noise amplifier provided by the invention with active inductance.
Fig. 2 is the input and output matching properties S parameter schematic diagram of one embodiment of the present of invention.
Fig. 3 is the amplitude-frequency response characteristic schematic diagram of one embodiment of the present of invention.
Fig. 4 is the noise coefficient characteristic schematic diagram of one embodiment of the present of invention.
Specific embodiment
With reference to the attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on this
The embodiment of invention, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, belongs to protection scope of the present invention.
The present invention provides a kind of ultra-wideband low-noise amplifiers with active inductance, by input module 1, amplification module 2
It is formed with feedback branch 3.Input module 1 is by NMOS transistor NM1, capacitance C1, capacitor C2With inductance L1The LC net of composition
Network, source level feedback resistance R1, the big resistance R of biasing3And load resistance R2It constitutes, to provide broadband input matching.NM1For source level
Follower configuration, input signal pass through input capacitance C1AC coupled is to NM1Source, and by by C2And L1It constitutes
Series LC network coupling input is to NM2Grid end.NM1Drain terminal connection load R2It is connected with power vd D, NM1Source pass through it is anti-
Feed resistance R1Ground connection.The effect of LC network is to offset part NM1High-frequency parasitic capacitor, widen the bandwidth of LNA, R3Connect NM1's
Grid end and bias voltage Vbias1, for being NM1Bias voltage is provided.Amplification module 2 is by NMOS transistor NM2, PMOS transistor
PM1, capacitance C4, the big resistance R of biasing6And common-mode feedback resistor R5It constitutes.NM2And PM1For common-source amplifier configuration, stack
Structure.C4It is separately connected NM2And PM1Grid end, make through the radio-frequency input signals AC coupled of LC to two stacking amplifiers
Grid end.NM2And PM1Drain terminal be connected directly, R5Connect PM1Grid end and NM2、PM1Public drain terminal, constitute common-mode feedback, mention
It is loaded for amplification.NM2Drain terminal connection output capacitance C5, the radiofrequency signal by amplification is exported.R R6Connect NM1's
Grid end and bias voltage Vbias1, for being NM2Bias voltage is provided.Feedback branch 3 is by capacitor C3With resistance R4It is in series.Across
It connects in NM2Drain terminal and NM1Grid end between, formed negative-feedback branch, play the role of widening bandwidth of operation, constant gain.
Fig. 2 to Fig. 4 gives the performance schematic diagram of a GF 130-nm RF SOI technology embodiment, it can be seen that this hair
Bright working frequency range is 0.1-3.4GHz, and input matching is met in working frequency range and requires (50 Ω matching, S11 < -10dB), gain
For 18.2~15.2dB, Minimum noises coefficients 3.4dB.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
Within the technical scope of the present disclosure, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims
Subject to enclosing.
Claims (1)
1. a kind of ultra-wideband low-noise amplifier with active inductance, which is characterized in that including input module (1), amplification module
(2) and feedback branch (3), wherein
Input module (1) is by NMOS transistor NM1, capacitance C1, capacitor C2With inductance L1LC network, the source level feedback electricity of composition
Hinder R1, the big resistance R of biasing3And load resistance R2It constitutes, to provide broadband input matching, NM1It is defeated for source level follower configuration
Enter signal and passes through input capacitance C1AC coupled is to NM1Source, and by by C2And L1The series LC network of composition couples
It is input to NM2Grid end, NM1Drain terminal connection load R2It is connected with power vd D, NM1Source pass through feedback resistance R1Ground connection, LC
The effect of network is to offset part NM1High-frequency parasitic capacitor, widen the bandwidth of LNA, R3Connect NM1Grid end and bias voltage
Vbias1, for being NM1Bias voltage is provided；
Amplification module (2) is by NMOS transistor NM2, PMOS transistor PM1, capacitance C4, the big resistance R of biasing6And common mode is anti-
Feed resistance R5It constitutes, NM2And PM1For common-source amplifier configuration, stacked structure, C4It is separately connected NM2And PM1Grid end, make to pass through
Grid end of the radio-frequency input signals AC coupled of LC to two stacking amplifiers, NM2And PM1Drain terminal be connected directly, R5Connection
PM1Grid end and NM2、PM1Public drain terminal, constitute common-mode feedback, provide amplification load, NM2Drain terminal connection output blocking electricity
Hold C5, the radiofrequency signal by amplification is exported, R6Connect NM1Grid end and bias voltage Vbias1, for being NM2Biasing is provided
Voltage；
Feedback branch (3) is by capacitor C3With resistance R4It is in series, it is connected across NM2Drain terminal and NM1Grid end between, formed negative anti-
Branch is presented, plays the role of widening bandwidth of operation, constant gain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810883027.8A CN109167578B (en) | 2018-08-06 | 2018-08-06 | An Ultra-Broadband Low Noise Amplifier with Active Inductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810883027.8A CN109167578B (en) | 2018-08-06 | 2018-08-06 | An Ultra-Broadband Low Noise Amplifier with Active Inductor |
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| CN109167578A true CN109167578A (en) | 2019-01-08 |
| CN109167578B CN109167578B (en) | 2020-08-28 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110086441A (en) * | 2019-04-29 | 2019-08-02 | 中国科学院微电子研究所 | Power amplifier |
| CN111917382A (en) * | 2020-08-11 | 2020-11-10 | 深圳市时代速信科技有限公司 | Low-noise amplifier based on active inductor with noise elimination function |
| CN114614773A (en) * | 2022-02-25 | 2022-06-10 | 清华大学 | Double-feedforward path low-noise amplification circuit and amplifier based on electromagnetic double coupling |
| CN115314104A (en) * | 2022-08-09 | 2022-11-08 | 无锡飞龙九霄微电子有限公司 | Low-noise RSSI circuit and working method |
| CN116094468A (en) * | 2023-04-06 | 2023-05-09 | 南京米乐为微电子科技有限公司 | Low noise amplifier and ultra-wideband receiver |
| CN117353679A (en) * | 2023-11-06 | 2024-01-05 | 北京无线电测量研究所 | Broadband input matching amplifying circuit |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110086441A (en) * | 2019-04-29 | 2019-08-02 | 中国科学院微电子研究所 | Power amplifier |
| CN111917382A (en) * | 2020-08-11 | 2020-11-10 | 深圳市时代速信科技有限公司 | Low-noise amplifier based on active inductor with noise elimination function |
| CN114614773A (en) * | 2022-02-25 | 2022-06-10 | 清华大学 | Double-feedforward path low-noise amplification circuit and amplifier based on electromagnetic double coupling |
| CN114614773B (en) * | 2022-02-25 | 2025-04-29 | 清华大学 | Dual feedforward path low noise amplifier circuit and amplifier based on electromagnetic dual coupling |
| CN115314104A (en) * | 2022-08-09 | 2022-11-08 | 无锡飞龙九霄微电子有限公司 | Low-noise RSSI circuit and working method |
| CN115314104B (en) * | 2022-08-09 | 2024-03-12 | 无锡飞龙九霄微电子有限公司 | Low-noise RSSI circuit and working method thereof |
| CN116094468A (en) * | 2023-04-06 | 2023-05-09 | 南京米乐为微电子科技有限公司 | Low noise amplifier and ultra-wideband receiver |
| CN116094468B (en) * | 2023-04-06 | 2023-08-01 | 南京米乐为微电子科技有限公司 | A low noise amplifier and an ultra wideband receiver |
| CN117353679A (en) * | 2023-11-06 | 2024-01-05 | 北京无线电测量研究所 | Broadband input matching amplifying circuit |
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| CN109167578B (en) | 2020-08-28 |
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Address after: No.443 Huangshan Road, Shushan District, Hefei City, Anhui Province 230022 Patentee after: University of Science and Technology of China Address before: 230026 Jinzhai Road, Baohe District, Hefei, Anhui Province, No. 96 Patentee before: University of Science and Technology of China |