CN109148338A - 一种提高腐蚀机混酸换液效率的方法及装置 - Google Patents
一种提高腐蚀机混酸换液效率的方法及装置 Download PDFInfo
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- CN109148338A CN109148338A CN201811026559.6A CN201811026559A CN109148338A CN 109148338 A CN109148338 A CN 109148338A CN 201811026559 A CN201811026559 A CN 201811026559A CN 109148338 A CN109148338 A CN 109148338A
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- nitration mixture
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- H10P72/0422—
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| CN201811026559.6A CN109148338A (zh) | 2018-09-04 | 2018-09-04 | 一种提高腐蚀机混酸换液效率的方法及装置 |
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| CN201811026559.6A CN109148338A (zh) | 2018-09-04 | 2018-09-04 | 一种提高腐蚀机混酸换液效率的方法及装置 |
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| CN109148338A true CN109148338A (zh) | 2019-01-04 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180325A (zh) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | 提高腐蚀机作业效率的方法 |
| CN114242581A (zh) * | 2021-12-24 | 2022-03-25 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | 一种研磨后晶圆背面抛光的方法 |
| CN115579311A (zh) * | 2022-12-02 | 2023-01-06 | 湖北江城芯片中试服务有限公司 | 混酸激活状态的控制方法、装置、计算机设备及存储介质 |
| CN116053127A (zh) * | 2022-10-18 | 2023-05-02 | 上海中欣晶圆半导体科技有限公司 | 一种腐蚀数字化模式的方法 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1495865A (zh) * | 2002-09-17 | 2004-05-12 | m.FSI��ʽ���� | 蚀刻液的再生方法、蚀刻方法和蚀刻系统 |
| CN1645574A (zh) * | 2005-01-07 | 2005-07-27 | 友达光电股份有限公司 | 蚀刻液回收系统与方法 |
| JP2007150352A (ja) * | 2007-02-19 | 2007-06-14 | Seiko Epson Corp | 処理装置および半導体装置の製造方法 |
| TW201005076A (en) * | 2008-07-31 | 2010-02-01 | Nihon Valqua Kogyo Kk | Process for regenerating a phosphoric acid-containing treatment liquid |
| CN101914770A (zh) * | 2010-08-10 | 2010-12-15 | 天津中环领先材料技术有限公司 | 高反射率酸腐片的腐蚀工艺 |
| CN102569015A (zh) * | 2010-12-23 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | 刻蚀液补给装置、补给方法和具该装置的湿法刻蚀设备 |
| CN103762155A (zh) * | 2013-12-23 | 2014-04-30 | 上海申和热磁电子有限公司 | 硅片清洗工艺 |
| US20140230851A1 (en) * | 2009-06-09 | 2014-08-21 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and computer-readable medium storing program |
| CN206735998U (zh) * | 2017-01-22 | 2017-12-12 | 冯合生 | 蚀刻高浓度废液回收再利用的处理系统 |
-
2018
- 2018-09-04 CN CN201811026559.6A patent/CN109148338A/zh active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1495865A (zh) * | 2002-09-17 | 2004-05-12 | m.FSI��ʽ���� | 蚀刻液的再生方法、蚀刻方法和蚀刻系统 |
| CN1645574A (zh) * | 2005-01-07 | 2005-07-27 | 友达光电股份有限公司 | 蚀刻液回收系统与方法 |
| JP2007150352A (ja) * | 2007-02-19 | 2007-06-14 | Seiko Epson Corp | 処理装置および半導体装置の製造方法 |
| TW201005076A (en) * | 2008-07-31 | 2010-02-01 | Nihon Valqua Kogyo Kk | Process for regenerating a phosphoric acid-containing treatment liquid |
| US20140230851A1 (en) * | 2009-06-09 | 2014-08-21 | Tokyo Electron Limited | Substrate processing apparatus, substrate processing method and computer-readable medium storing program |
| CN101914770A (zh) * | 2010-08-10 | 2010-12-15 | 天津中环领先材料技术有限公司 | 高反射率酸腐片的腐蚀工艺 |
| CN102569015A (zh) * | 2010-12-23 | 2012-07-11 | 无锡尚德太阳能电力有限公司 | 刻蚀液补给装置、补给方法和具该装置的湿法刻蚀设备 |
| CN103762155A (zh) * | 2013-12-23 | 2014-04-30 | 上海申和热磁电子有限公司 | 硅片清洗工艺 |
| CN206735998U (zh) * | 2017-01-22 | 2017-12-12 | 冯合生 | 蚀刻高浓度废液回收再利用的处理系统 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180325A (zh) * | 2019-12-31 | 2020-05-19 | 杭州中欣晶圆半导体股份有限公司 | 提高腐蚀机作业效率的方法 |
| CN114242581A (zh) * | 2021-12-24 | 2022-03-25 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | 一种研磨后晶圆背面抛光的方法 |
| CN116053127A (zh) * | 2022-10-18 | 2023-05-02 | 上海中欣晶圆半导体科技有限公司 | 一种腐蚀数字化模式的方法 |
| CN116053127B (zh) * | 2022-10-18 | 2026-02-10 | 上海中欣晶圆半导体科技有限公司 | 一种腐蚀数字化模式的方法 |
| CN115579311A (zh) * | 2022-12-02 | 2023-01-06 | 湖北江城芯片中试服务有限公司 | 混酸激活状态的控制方法、装置、计算机设备及存储介质 |
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Effective date of registration: 20191216 Address after: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant after: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Applicant after: Shanghai xinxinjingyuan Semiconductor Technology Co., Ltd Address before: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Applicant before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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Address after: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant after: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Applicant before: Shanghai xinxinjingyuan Semiconductor Technology Co.,Ltd. |
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Address after: 311225 No. 888, dongken Road, Qiantang New District, Hangzhou City, Zhejiang Province Applicant after: Hangzhou Zhongxin wafer semiconductor Co.,Ltd. Applicant after: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. Address before: 310000 709-18, 3899 Jiangdong Avenue, dajiangdong industrial cluster, Xiaoshan District, Hangzhou City, Zhejiang Province Applicant before: HANGZHOU ZHONGXIN WAFER SEMICONDUCTOR Co.,Ltd. Applicant before: Shanghai Zhongxin wafer semiconductor technology Co.,Ltd. |
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Application publication date: 20190104 |
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| WD01 | Invention patent application deemed withdrawn after publication |