CN109136836A - Mask plate, wafer, evaporation coating device and evaporation coating method - Google Patents
Mask plate, wafer, evaporation coating device and evaporation coating method Download PDFInfo
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- CN109136836A CN109136836A CN201811188611.8A CN201811188611A CN109136836A CN 109136836 A CN109136836 A CN 109136836A CN 201811188611 A CN201811188611 A CN 201811188611A CN 109136836 A CN109136836 A CN 109136836A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of mask plate, wafer, evaporation coating device and evaporation coating methods.The mask plate includes exposure mask main body and several contraposition columns being arranged in the exposure mask main body, and each contraposition column is used in the contraposition sets of holes that are plugged on the wafer to technique, so that the exposure mask main body and the Wafer alignment.Mask plate of the invention is provided with several contraposition columns in exposure mask main body.In the contraposition sets of holes that each contraposition column is used to be plugged on the wafer to technique, so that exposure mask main body and Wafer alignment.The structure of mask plate is simple, and can effectively improve aligning accuracy.The mask plate of the structure can make aligning accuracy be increased to ± 0.5 μm, so as to reduce wastage of material, reduce production cost, bad and defect caused by contraposition deviates is reduced, product yield is improved, and repetition contraposition number can also be reduced, shorten position aligning time, improves production capacity.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of mask plate, a kind of wafer, a kind of evaporation coating device and one
Kind evaporation coating method.
Background technique
Generally, Organic Light Emitting Diode (OLED) technology is considered as the next generation person of succeeding of display and lighting engineering,
More paid attention to and studied investment in recent years.Silicon substrate OLED micro-display device be using monocrystalline silicon as active matrix driving backboard and
The positive type organic light emitting diode display (AMOLED) of production.With common with amorphous silicon, microcrystal silicon, polysilicon or oxidation
Object thin film transistor (TFT) is that the displayer part of backboard is driven to compare, and monocrystalline silicon backboard has higher carrier mobility,
Therefore silicon substrate OLED device can prepare smaller Pixel Dimensions, the fining of display pixel may be implemented, Pixel Dimensions are usual
At 6~15 μm.Si-substrate integrated circuit foundry emblem mark can be used in the preparation process of driving backboard in silicon substrate OLED device simultaneously
Quasi- CMOS technology, therefore the integrated of more functional circuits can be realized on display chip.Based on the need shown to nearly eye
It asks, silicon substrate OLED micro-display device all shows preferable application prospect in dual-use field at present.
During preparing display panel organic luminous layer, need to prepare the layer film that shines using vacuum evaporation technology,
Specifically, organic material is heated in vacuum environment, so that organic material is passed through the figuratum accurate metal of tool by heat sublimation
Mask plate forms in the corresponding anode pattern of wafer sub-pixel and has effigurate organic film.By a variety of organic materials
The successive sedimentation of material forms a film, and can form the organic luminous layer with multi-layer film structure.Currently, accurate metal mask plate with
Contraposition process to technique wafer all uses optical registration substantially, such as LSA, LIA, FIA.During contraposition, in order to be more easier
Identify the alignment mark (Mark) and mask plate registration holes on wafer, the registration holes (through-hole) at mask plate outer rim can be all much larger than
Alignment mark, then mask plate contraposition bore dia will may arrive greatly 20mm, is guaranteed if alignment mark size is 20 μm with this
Resolution of the imaging sensor to the two.Generally, with when technique wafer is aligned, aligning accuracy usually requires that mask plate
Control is in ± 5 μ m of ﹤.If aligned in this kind of method, aligning accuracy is difficult to guarantee, especially requirements at the higher level
Aligning accuracy.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of mask plate, one kind are proposed
Wafer, a kind of evaporation coating device and a kind of evaporation coating method.
To achieve the goals above, the first aspect of the present invention, provides a kind of mask plate, and the mask plate includes exposure mask
Main body and several contraposition columns being arranged in the exposure mask main body, each contraposition column are used to be plugged on the crystalline substance to technique
In contraposition sets of holes on circle, so that the exposure mask main body and the Wafer alignment.
Optionally, the exposure mask main body includes the first mask strip and the second mask strip arranged in a crossed manner, and the contraposition column is set
It sets at first mask strip and the equitant position of the second mask strip.
Optionally, the tapered structure of the contraposition column.
Optionally, the altitude range of the pyramidal structure is 1mm~2mm；And/or the big end size of the pyramidal structure
It is 1 μm smaller than the aperture size of the corresponding contraposition sets of holes~2 μm.
Optionally, several first pre- alignment marks, each pre- alignment mark are additionally provided in the exposure mask main body
For corresponding described to the second pre- alignment mark on the wafer of technique, so that the exposure mask main body and the wafer are pre- right
Position.
The second aspect of the present invention provides a kind of wafer, and the wafer is provided with several contraposition sets of holes, each described
Contraposition sets of holes are used to accommodate the contraposition column on mask plate, so that the wafer and the mask plate align.
The third aspect of the present invention provides a kind of evaporation coating device, including chamber is deposited and is arranged intracavitary in the vapor deposition
Mask plate, the mask plate includes the mask plate recorded above.
Optionally, the evaporation coating device further include:
Support platform, setting is intracavitary in the vapor deposition, and the support platform is for carrying the mask plate and described to work
Skill wafer；
Adsorption piece, it is rotatable and to be liftably arranged in the vapor deposition intracavitary, the adsorption piece for adsorb it is fixed described in
To technique wafer and adjust the relative position of itself and the mask plate；
Imaging sensor, for obtaining the contraposition image data to technique wafer and the mask plate；
Controller, the contraposition image data for being obtained according to described image sensor determine described to technique wafer
With the alignment of the mask plate.
The fourth aspect of the present invention provides a kind of evaporation coating method, described using the evaporation coating device recorded above
Evaporation coating method includes:
Step S110, by the mask plate and it is described to technique wafer load respectively to it is described vapor deposition it is intracavitary；
Step S120, the contraposition column on the mask plate is plugged on accordingly described to the contraposition on technique wafer
In sets of holes；
Step S130, evaporation process processing is carried out to technique wafer to described.
Optionally, step S110 is specifically included:
The exposure mask is loaded to the intracavitary support platform of the vapor deposition；
It will be described in technique wafer load to the adsorption piece；
Step S120 is specifically included:
The adsorption piece rotation is controlled, so that the second pre- alignment mark on technique wafer and the mask plate
On the first pre- alignment mark it is corresponding；
Control adsorption piece decline so that the contraposition column on the mask plate be plugged on it is accordingly described to work
In the contraposition sets of holes on skill wafer；
The contraposition image data to technique wafer and the mask plate is obtained using imaging sensor；
The contraposition image data obtained using controller according to described image sensor determines described to technique wafer
With the alignment of the mask plate.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of evaporation coating device in first embodiment of the invention；
Fig. 2 is the structural schematic diagram of mask plate in second embodiment of the invention；
Fig. 3 is the structural schematic diagram in third embodiment of the invention to technique wafer；
Fig. 4 is the flow chart of evaporation coating method in fourth embodiment of the invention.
Description of symbols
100: mask plate；
110: exposure mask main body；
111: the first mask strips；
112: the second mask strips；
120: contraposition column；
130: the first pre- alignment marks；
140: the first notch；
200: evaporation coating device；
210: vapor deposition chamber；
220: support platform；
230: adsorption piece；
240: imaging sensor；
300: wafer；
310: contraposition sets of holes；
320: first groove；
330: second groove；
340: the second pre- alignment marks；
350: the second notch.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As shown in Figure 1, Figure 2 and Figure 3, the first aspect of the present invention is related to a kind of mask plate 100, which includes
Exposure mask main body 110 and several contraposition columns 120 being arranged in exposure mask main body 110.Wherein, each contraposition column 120 is for inserting
It sets in the contraposition sets of holes 310 on the wafer 300 to technique, so that exposure mask main body 110 and wafer 300 align.
Specifically, as shown in Figure 1, when carrying out evaporation process to wafer 300, for example, the organic luminous layer of silicon substrate OLED
When being deposited, mask plate 100 and wafer 300 are loaded in the vapor deposition chamber 210 for setting evaporation coating device 200 respectively, also, is carrying out
Before evaporation process, need wafer 300 and mask plate 100 carrying out contraposition processing, at this point it is possible to by each of on mask plate 100
Contraposition column 120 is plugged in the corresponding contraposition sets of holes 310 on wafer 300, so as to complete wafer 300 and mask plate 100
Contraposition, later, can use mask plate 100 be exposure mask, vapor deposition forms required organic light emission on wafer 300
Layer.
The mask plate 100 of the present embodiment is provided with several contraposition columns 120 in exposure mask main body 110.Each contraposition column
120 for being plugged in the contraposition sets of holes 310 on the wafer 300 to technique, so that exposure mask main body 110 and wafer 300 align.
The structure of mask plate 100 is simple, and can effectively improve aligning accuracy.The mask plate 100 of the structure can make aligning accuracy
It is increased to ± 0.5 μm, so as to reduce wastage of material, reduces production cost, reduces bad and defect caused by contraposition deviates,
Product yield is improved, and repetition contraposition number can also be reduced, shortens position aligning time, improves production capacity.
It should be noted that not defined for contraposition column 120 and the particular number for aligning sets of holes 310, in reality
Border in application, can determine according to actual needs required for contraposition column 120 and align sets of holes 310 quantity, it is possible to understand that
The quantity for being the quantity and contraposition sets of holes 310 that align column 120 should be consistent.
Explanation is needed further exist for, the specific structure for aligning column 120 does not define, for example, the contraposition
Column 120 can be in cylindrical structure, conical structure etc..Align sets of holes 310 structure, for example, it may be clear opening, bellmouth,
Trapezoidal hole etc..
As depicted in figs. 1 and 2, in order to further increase aligning accuracy and avoid contraposition column to the shadow of 300 performance of wafer
It rings, exposure mask main body 110 includes the first mask strip 111 and the second mask strip 112 arranged in a crossed manner, wherein the contraposition setting of column 120 exists
At first mask strip 111 and the equitant position of the second mask strip 112.
Correspondingly, first groove 320 corresponding with the first mask strip 111 is provided on wafer 300 and with second
The corresponding second groove 330 of mask strip 112, is provided with pair at first groove 320 and the equitant position of second groove 330
Position sets of holes 310.
When production forms the mask plate 100 and wafer 300 of above structure, can make to be formed by photoetching process, example
Such as, it can be examined by substrate preparation, spin coating, front baking (PAB), exposure and alignment, rear baking (PEB), the solid film that develops, measurement
Look into, the photoetching processes such as pattern transfer and removing wafer 300 first groove 320 and 330 infall of second groove and mask plate
100 the first mask strip 111 and 112 infall of the second mask strip makes contraposition sets of holes 310 respectively and contraposition column 120 (is covered in Fig. 1
Diaphragm plate 100 and the only simple signal of wafer 300, not generate actual use).
As shown in Figure 1, being smoothly inserted in corresponding contraposition on mask plate 100 for the ease of the contraposition sets of holes 310 on wafer 300
In column 120, contraposition column 120 can be with tapered structure.In addition to this, contraposition column 120 can also be in some other convenient for contraposition set
The structure on mask plate 100 in corresponding contraposition column 120 is smoothly inserted in hole 310, for example, can be in contraposition column 120 close to contraposition
One end setting rounding corner structure of sets of holes 310 etc..Preferably, the altitude range of pyramidal structure is 1mm~2mm.Certainly, this is removed
In addition, the height of pyramidal structure is also an option that other numberical ranges.
It is smoothly inserted on mask plate 100 in corresponding contraposition column 120, bores for the ease of the contraposition sets of holes 310 on wafer 300
The big end size of shape structure than it is corresponding contraposition sets of holes 310 aperture size it is 1 μm small~2 μm.That is, contraposition column 120
Full-size is also smaller than aligning the aperture size of sets of holes 310, in this way, can to align column 120 and align between sets of holes 310
Clearance fit is formed, is smoothly inserted in corresponding contraposition column 120 convenient for contraposition sets of holes 310, simultaneously as the big end of pyramidal structure
Size is only 1 μm~2 μm smaller than the aperture size of corresponding contraposition sets of holes 310, can further effectively improve between the two
Aligning accuracy.
As shown in Figure 1, Figure 2 and Figure 3, it in order to further increase the aligning accuracy between wafer 300 and mask plate 100, covers
Several the first pre- alignment marks 130 are additionally provided in film main body 110, each first pre- alignment mark 130 is for corresponding to work
The second pre- alignment mark 340 on the wafer 300 of skill, so that exposure mask main body 110 and wafer 300 align in advance.
Specifically, as shown in Figure 1, being equally illustrated for carrying out evaporation process to wafer 300, vapor deposition work is being carried out
It before skill, needs wafer 300 and mask plate 100 carrying out contraposition processing, at this point it is possible to first by the second pre- contraposition on wafer 300
Label 340 is corresponding with the first pre- alignment mark 130 on mask plate 100, so that wafer 300 and mask plate 100 align in advance, this
When, contraposition sets of holes 310 are in the surface of corresponding contraposition column 120.Later, control adsorption piece 230 (being mentioned below) decline, with
Just contraposition sets of holes 310 are smoothly inserted in corresponding contraposition column 120, realize the final positioning of wafer 300 and mask plate 100.
In addition, as shown in Figures 2 and 3, in order to further increase the aligning accuracy of wafer 300 Yu mask plate 100, mask plate
It is provided with the first notch 140 (first notch 140 can be with V-shaped slot structure) on 100, correspondingly, is additionally provided on wafer 300
Second notch 350 corresponding with the first notch 140 (second notch 350 can be with V-shaped slot structure).
The second aspect of the present invention provides a kind of wafer 300 as shown in figures 1 and 3, which is provided with several
A contraposition sets of holes 310, each contraposition sets of holes 310 are used to accommodate contraposition column 120 on mask plate 100 so that wafer 300 with cover
Diaphragm plate 100 aligns.
The wafer 300 of the present embodiment, is provided with several contraposition sets of holes 310, and each contraposition sets of holes 310 are covered for accommodating
Contraposition column 120 on diaphragm plate 100 can make aligning accuracy be increased to ± 0.5 so that wafer 300 and mask plate 100 align
μm, so as to reduce wastage of material, production cost is reduced, bad and defect caused by contraposition deviates is reduced, it is good to improve product
Rate, and repetition contraposition number can also be reduced, shorten position aligning time, improves production capacity.
The third aspect of the present invention as shown in Figure 1, providing a kind of evaporation coating device 200, including is deposited chamber 210 and sets
The mask plate 100 in vapor deposition chamber 210 is set, mask plate 100 includes the mask plate 100 recorded above.
The evaporation coating device 200 of the present embodiment has the structure for the mask plate 100 recorded above, sets in exposure mask main body 110
It is equipped with several contraposition columns 120.Each contraposition column 120 is used to be plugged in the contraposition sets of holes 310 on the wafer 300 to technique,
So that exposure mask main body 110 and wafer 300 align.The structure of mask plate 100 is simple, and can effectively improve aligning accuracy.It should
The mask plate 100 of structure can make aligning accuracy be increased to ± 0.5 μm, and so as to reduce wastage of material, reduction is produced into
This, reduces bad and defect caused by contraposition deviates, improves product yield, and can also reduce repetition contraposition number, shortens
Position aligning time improves production capacity.
As shown in Figure 1, evaporation coating device 200 further includes support platform 220, (it can be inhaled adsorption piece 230 for vacuum chuck etc.
Attached structure), imaging sensor 240 and controller (not showed that in figure).Wherein, the setting of support platform 220 is in vapor deposition chamber 210
Interior, support platform 220 is for carrying mask plate 100 and to technique wafer 300.Adsorption piece 230 is rotatable and is liftably arranged
In vapor deposition chamber 210, adsorption piece 230 for adsorb it is fixed to technique wafer 300 and adjust its with mask plate 100 opposite position
Set, so that the second pre- alignment mark 340 on wafer 300 is corresponding with the first pre- alignment mark 130 on mask plate 100 and
It is corresponding with contraposition column 120 to align sets of holes 310.Imaging sensor 240 is used to obtain to technique wafer 300 and mask plate 100
Align image data.Controller be used for is obtained according to imaging sensor contraposition image data determination to technique wafer 300 with cover
The alignment of diaphragm plate 100.
The fourth aspect of the present invention, as shown in figure 4, a kind of evaporation coating method S100 is provided, using the vapor deposition recorded above
Device, the specific structure and related content of evaporation coating device can be recorded with reference to related above, and therefore not to repeat here.Evaporation coating method
S100 includes:
S110, loaded respectively by mask plate and to technique wafer it is intracavitary to being deposited.
Specifically, as shown in Figure 1, loading mask plate 100 to the support platform 220 in vapor deposition chamber 210.Utilize vacuum
Manipulator will be sent into vapor deposition chamber 210 to technique wafer 300, and the adsorption piece 230 being deposited in chamber 210 drops to adsorption potential and crystalline substance is sucked
Circle 300, then, wafer 300 drops to pre- para postion with adsorption piece 230 together.
S120, the contraposition column on mask plate is plugged on accordingly in the contraposition sets of holes on technique wafer.
Specifically, as shown in Figure 1, control adsorption piece 230 rotates, so as to the second pre- contraposition on technique wafer 300
Label 340 is corresponding with the first pre- alignment mark 130 on mask plate 100, completes the pre- contraposition of wafer 300 and mask plate 100.
It controls adsorption piece 230 to decline, so that the contraposition column 120 on mask plate 100 is plugged on accordingly to technique wafer
In contraposition sets of holes 310 on 300.
The contraposition image data to technique wafer 300 and mask plate 100 is obtained using imaging sensor 240.Utilize control
The contraposition image data that device is obtained according to imaging sensor 240 determines the alignment to technique wafer 300 and mask plate 100,
If alignment is good, S130 is thened follow the steps, is exactly to execute step conversely, then returning to step S120
Pre- contraposition process in S120, until alignment is good.
S130, the progress evaporation process processing of technique wafer is treated.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of mask plate, which is characterized in that the mask plate includes exposure mask main body and is arranged in the exposure mask main body
Several contraposition columns, each contraposition column is used in the contraposition sets of holes that are plugged on the wafer to technique, so that described cover
Film main body and the Wafer alignment.
2. mask plate according to claim 1, which is characterized in that the exposure mask main body includes the first exposure mask arranged in a crossed manner
Item and the second mask strip, the contraposition column are arranged at first mask strip and the equitant position of the second mask strip.
3. mask plate according to claim 1, which is characterized in that the tapered structure of the contraposition column.
4. mask plate according to claim 3, which is characterized in that the altitude range of the pyramidal structure is 1mm~2mm；
And/or the big end size of the pyramidal structure than it is corresponding it is described contraposition sets of holes aperture size it is 1 μm small~2 μm.
5. mask plate as claimed in any of claims 1 to 4, which is characterized in that also set up in the exposure mask main body
There are several the first pre- alignment marks, each pre- alignment mark is for corresponding described pre- right to second on the wafer of technique
Position label, so that the exposure mask main body aligns in advance with the wafer.
6. a kind of wafer, which is characterized in that the wafer is provided with several contraposition sets of holes, and each contraposition sets of holes are for holding
The contraposition column on mask plate is set, so that the wafer and the mask plate align.
7. including vapor deposition chamber and the intracavitary mask plate of the vapor deposition is arranged in, which is characterized in that described to cover in a kind of evaporation coating device
Diaphragm plate includes mask plate described in any one of claim 1 to 5.
8. evaporation coating device according to claim 7, which is characterized in that the evaporation coating device further include:
Support platform, setting is intracavitary in the vapor deposition, and the support platform is for carrying the mask plate and described to artwork
Circle；
Adsorption piece, it is rotatable and be liftably arranged in that the vapor deposition is intracavitary, and the adsorption piece is fixed described to work for adsorbing
Skill wafer and the relative position for adjusting itself and the mask plate；
Imaging sensor, for obtaining the contraposition image data to technique wafer and the mask plate；
Controller, the contraposition image data for being obtained according to described image sensor determine described to technique wafer and institute
State the alignment of mask plate.
9. a kind of evaporation coating method, which is characterized in that using evaporation coating device described in claim 7 or 8, the evaporation coating method packet
It includes:
Step S110, by the mask plate and it is described to technique wafer load respectively to it is described vapor deposition it is intracavitary；
Step S120, the contraposition column on the mask plate is plugged on accordingly described to the contraposition sets of holes on technique wafer
It is interior；
Step S130, evaporation process processing is carried out to technique wafer to described.
10. evaporation coating method according to claim 9, which is characterized in that the evaporation coating device is steaming according to any one of claims 8
Plating appts, and the mask plate is mask plate described in claim 5；
Step S110 is specifically included:
The exposure mask is loaded to the intracavitary support platform of the vapor deposition；
It will be described in technique wafer load to the adsorption piece；
Step S120 is specifically included:
The adsorption piece rotation is controlled, so that on the second pre- alignment mark on technique wafer and the mask plate
First pre- alignment mark is corresponding；
Control adsorption piece decline so that the contraposition column on the mask plate be plugged on it is accordingly described to artwork
In the contraposition sets of holes on circle；
The contraposition image data to technique wafer and the mask plate is obtained using imaging sensor；
The contraposition image data obtained using controller according to described image sensor determines described to technique wafer and institute
State the alignment of mask plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811188611.8A CN109136836A (en) | 2018-10-12 | 2018-10-12 | Mask plate, wafer, evaporation coating device and evaporation coating method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811188611.8A CN109136836A (en) | 2018-10-12 | 2018-10-12 | Mask plate, wafer, evaporation coating device and evaporation coating method |
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| CN109136836A true CN109136836A (en) | 2019-01-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110808277A (en) * | 2019-09-26 | 2020-02-18 | 苏州敏芯微电子技术股份有限公司 | Wafer structure and preparation method thereof |
| CN117646165A (en) * | 2023-12-18 | 2024-03-05 | 觉芯电子(无锡)有限公司 | Vapor deposition method for one-step forming of metallization of metal circuit and through hole wall |
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| CN105552013A (en) * | 2014-10-28 | 2016-05-04 | Snu精度株式会社 | Apparatus for rotating aligning a substrate |
| CN107475665A (en) * | 2017-08-30 | 2017-12-15 | 京东方科技集团股份有限公司 | A kind of mask plate and evaporation coating method |
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| CN110808277A (en) * | 2019-09-26 | 2020-02-18 | 苏州敏芯微电子技术股份有限公司 | Wafer structure and preparation method thereof |
| CN110808277B (en) * | 2019-09-26 | 2024-02-13 | 苏州敏芯微电子技术股份有限公司 | Wafer structure and preparation method thereof |
| CN117646165A (en) * | 2023-12-18 | 2024-03-05 | 觉芯电子(无锡)有限公司 | Vapor deposition method for one-step forming of metallization of metal circuit and through hole wall |
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