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CN109037411A - Nitride optoelectronic transformational structure and preparation method based on Sn ion implanting - Google Patents

Nitride optoelectronic transformational structure and preparation method based on Sn ion implanting Download PDF

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CN109037411A
CN109037411A CN201810846620.5A CN201810846620A CN109037411A CN 109037411 A CN109037411 A CN 109037411A CN 201810846620 A CN201810846620 A CN 201810846620A CN 109037411 A CN109037411 A CN 109037411A
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许晟瑞
范晓萌
王学炜
郝跃
张进成
李培咸
张春福
马晓华
毕臻
周小伟
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Xidian University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants

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Abstract

本发明公开了一种基于Sn离子注入的氮化物光电转换结构及其制备方法，主要解决现有光电转换结构光吸收效率较低导致太阳能电池效率低的问题。其自下而上包括：衬底(1)、高温AlN成核层(2)、i‑GaN层(3)、n型GaN层(4)、InxGa1‑ xN/GaN量子阱层(5)和p型GaN层(6)，其中n型GaN层(4)通过离子注入的方式进行掺杂，注入有剂量为1×1015‑1017cm‑2、能量为100keV的Sn离子。本发明提高了光电转换结构对光的吸收率，进而提高了其效率，可用来制作高效率的太阳能电池。

The invention discloses a nitride photoelectric conversion structure based on Sn ion implantation and a preparation method thereof, which mainly solves the problem of low light absorption efficiency of the existing photoelectric conversion structure resulting in low efficiency of solar cells. It includes from bottom to top: substrate (1), high temperature AlN nucleation layer (2), i‑GaN layer (3), n-type GaN layer (4), In x Ga 1‑ x N/GaN quantum well layer (5) and the p-type GaN layer (6), wherein the n-type GaN layer (4) is doped by ion implantation, implanted with Sn ions with a dose of 1×10 15 ‑10 17 cm ‑2 and an energy of 100keV . The invention improves the light absorption rate of the photoelectric conversion structure, further improves its efficiency, and can be used to make high-efficiency solar cells.

Description

Nitride optoelectronic transformational structure and preparation method based on Sn ion implanting
Technical field
The invention belongs to microelectronics technology, in particular to a kind of nitride optoelectronic Change-over knot based on Sn ion implanting Structure can be applied to make efficient solar battery.
Technical background
With economic and science and technology development, energy problem receives more and more attention.Electric energy as secondary energy sources whether there is or not The advantage with energy high-speed transfer is directly polluted, but in current generation mode, coal electricity still occupies maximum ratio, causes The a large amount of wasting of resources and environmental pollution, and solar battery technology is the important method for solving the problems, such as this.Improve the sun The efficiency of energy battery, can promote the utilization rate for the energy.
By GaN in the inspiration of high efficiency blue-ray LED application aspect, people have started to grind nitride solar cell Study carefully.Nitride material system includes GaN, InN and AlN and its alloy, can be used to make the photoelectric conversion knot of solar battery Structure realizes absorption and conversion to light, can improve the efficiency of solar battery to the absorptivity of light by improving it.
In photovoltaic conversion structure in nitride solar cell common at present, n-type doping generallys use doping Si's The mode that mode is realized, and adulterates Si is additionally to be passed through the source Si, this photoelectricity during growing GaN using MOCVD technique The efficiency of light absorption of transformational structure is not high, causes the low efficiency of solar battery.
Summary of the invention
It is an object of the invention to overcome the shortcomings of the above method, a kind of nitride optoelectronic based on Sn ion implanting is proposed Transformational structure and preparation method realize the n-type doping in the area N-shaped GaN by injection Sn ion, to improve efficiency of light absorption, thus Improve the efficiency of solar battery.
To achieve the above object, the present invention is based on the nitride optoelectronic transformational structure of Sn ion implanting, include: from bottom to top Substrate, high-temperature AlN nucleating layer, i-GaN layers, n-type GaN layer, InxGa1-xN/GaN quantum well layer and p-type GaN layer, feature exist In: it is 1 × 10 that n-type GaN layer, which is injected with dosage,15-1017cm-2, Sn ion that energy is 100keV, to improve absorption to light Rate, and then improve the efficiency of photovoltaic conversion structure.
Further, substrate uses sapphire or SiC material.
Further, the high-temperature AlN nucleating layer with a thickness of 25-35nm；The i-GaN layer with a thickness of 2.5- 3.5μm；The n-type GaN layer with a thickness of 1.5-3 μm；The p-type GaN layer with a thickness of 120-250nm.
Further, the InxGa1-xThe Quantum Well periodicity of N/GaN quantum well layer (5) is 10-30, each period InxGa1-xThe thickness of N well layer and GaN barrier layer is respectively 1-5nm and 8-14nm, and the adjusting range of In content x is 0.15-0.25.
To achieve the above object, the present invention is based on the preparation method of the nitride optoelectronic transformational structure of Sn ion implanting, packets Include following steps:
1) heating and the pretreatment of high-temperature ammonolysis are carried out to substrate；
2) using the AlN nucleating layer of MOCVD technique growth 25-35nm on substrate after the pre-treatment；
3) 2.5-3.5 μm of i-GaN layer is grown using MOCVD technique on AlN nucleating layer；
4) growing n-type GaN layer
1.5-3 μm of GaN 4a) is grown using MOCVD technique on i-GaN layer,
Ion implantation technology 4b) is used to carry out dosage on the surface layer GaN of growth as 1 × 1015-1017cm-2, energy is The Sn ion implanting of 100keV；
Reaction equation temperature 4c) is adjusted to 500-1100 DEG C, anneal 10-30min in nitrogen environment, completes to N-type GaN The production of layer；
5) use MOCVD technique growth cycle number for the In of 10-30 in n-type GaN layerxGa1-xN/GaN quantum well layer, often The In in a periodxGa1-xThe thickness of N well layer and GaN barrier layer is respectively 3-8nm and 8-15nm, and the adjusting range of In content x is 0.15-0.25；
6) in InxGa1-xUse MOCVD technique growth thickness for the p-type GaN layer of 120-250nm on N/GaN quantum well layer；
7) reaction chamber temperature is maintained 900-1050 DEG C, in H2Under atmosphere, anneal 4-8min, completes to photoelectric conversion knot The production of structure.
The present invention is 1 × 10 due to being filled with dosage on n-type GaN layer surface15-1017cm-2, energy be 100keV Sn from Son improves efficiency of light absorption compared to existing device, and then the efficiency of photovoltaic conversion structure can be improved.
Detailed description of the invention
Fig. 1 is photovoltaic conversion structure schematic diagram of the invention；
Fig. 2 is the process flow chart of present invention production Fig. 1 photovoltaic conversion structure.
Specific embodiment
The present invention will be further described below with reference to the accompanying drawings.
Referring to Fig.1, photovoltaic conversion structure of the invention includes: substrate 1, high-temperature AlN nucleating layer 2, i-GaN layer 3, N-shaped GaN Layer 4, InxGa1-xN/GaN Quantum Well 5 and p-type GaN layer 6.Wherein high-temperature AlN nucleating layer 2 be located at c surface sapphire substrate layer 1 it On, with a thickness of 25-35nm；The i-GaN layer 3 is located on high temperature nucleating layer 2, with a thickness of 2.5-3.5 μm；I-GaN layer 3 it The upper n-type GaN layer 4 for a thickness of 1.5-3 μm, it is 1 × 10 that n-type GaN layer 4, which is injected with dosage,15-1017cm-2, energy 100keV Sn ion；The InxGa1-xN/GaN quantum well layer 5 is located on n-type GaN layer 4, and wherein the adjusting range of In content x is 0.15-0.25, i.e. InxGa1-xN layers and GaN layer alternating growth, each InxGa1-xN layers and it above GaN layer combine for A cycle, total 10-30 period, each InxGa1-xThe thickness of N layers and GaN layer is respectively 3-8nm and 8-15nm；The p-type GaN layer 6 is located at InxGa1-xOn N/GaN layer 5, with a thickness of 120-250nm.
The InxGa1-xThe range of In content parameter x in N/GaN Quantum Well 5 is 0.15-0.25, by growth course The value of different x can be set in the ratio in the middle adjustment source In and the source Ga, to prepare the photovoltaic conversion structure for absorbing different wavelengths of light.
Referring to Fig. 2, the present invention provides three kinds of embodiments of nitride optoelectronic transformational structure of the preparation based on Sn ion implanting.
Embodiment 1 prepares a kind of photovoltaic conversion structure for absorbing a length of 425nm of light wave.
Step 1 pre-processes substrate.
1a) by Sapphire Substrate after over cleaning, it is placed in metal organic chemical vapor deposition MOCVD reaction chamber, it will The vacuum degree of reaction chamber is reduced to 2 × 10-2Torr；It is passed through hydrogen to reaction chamber, is reached for 50Torr in MOCVD chamber pressure Under the conditions of, it is 900 DEG C by silicon to temperature, and keep 5min, completes the heat treatment to substrate base；
The substrate after heat treatment 2a) is placed in the reaction chamber that temperature is 1050 DEG C, is passed through the ammonia that flow is 3000sccm, Continue 5min to be nitrogenized.
Step 2 grows high-temperature AlN layer, such as Fig. 2 (a).
It uses MOCVD technique under conditions of reaction chamber temperature is 1040 DEG C on substrate after nitridation, while being passed through stream Amount is the ammonia of 3000sccm, and the silicon source that flow is 1200sccm hydrogen and flow is 30sccm is keeping pressure to be 20Torr Under conditions of growth thickness be 25nm high-temperature AlN nucleating layer.
Step 3 grows i-GaN layers, such as Fig. 2 (b).
Using MOCVD technique while to be passed through flow under conditions of reaction chamber temperature is 980 DEG C and being on AlN nucleating layer The ammonia of 2500sccm, the gallium source that flow is 1200sccm hydrogen and flow is 150sccm are keeping pressure to be the item of 80Torr The i-GaN layer that growth thickness is 3 μm under part.
Step 4, growing n-type GaN layer, such as Fig. 2 (c).
Using MOCVD technique while to be passed through flow under conditions of reaction chamber temperature is 1000 DEG C and being on i-GaN layer The gallium source and flow that ammonia, the flow of 2500sccm is 1200sccm hydrogen, flow is 40sccm are 30sccm silicon source, are being kept Growth thickness is 1.5 μm of GaN under conditions of pressure is 20Torr；Then Sn ion implanting, implantation dosage 1 are carried out to the GaN ×1015cm-1, energy 100keV, reaction equation temperature is maintained 500 DEG C later, anneal 10min in nitrogen environment.
Step 5 grows In0.15Ga0.85N/GaN quantum well layer, such as Fig. 2 (d).
MOCVD technique is used in n-type GaN layer, 30 periods of growth under conditions of keeping pressure to be 20Torr In0.15Ga0.85NGaN Quantum Well, the single layer In in each period0.15Ga0.85The thickness of N well layer and GaN barrier layer be respectively 3nm and 8nm, wherein the flow of nitrogen source is maintained at 1000sccm in growth course, and in growth In0.15Ga0.85Reaction chamber is kept when N well layer Temperature is 760 DEG C, and holding gallium source flux is 50sccm, and indium source flux is 160sccm；Reaction chamber is adjusted when growing GaN barrier layer Temperature is 980 DEG C, and holding gallium source flux is 47sccm.
Step 6 grows p-type GaN layer, such as Fig. 2 (e).
In In.15Ga0.85Use MOCVD technique under conditions of reaction chamber temperature is 950 DEG C on N/GaN quantum well layer, together When be passed through flow be 2500sccm ammonia, flow be 1200sccm hydrogen, the gallium source and flow that flow is 150sccm are The magnesium source of 100sccm, the p-type GaN layer that growth thickness is 200nm under conditions of keeping pressure to be 20Torr.
Reaction chamber temperature is maintained 860 DEG C, in H by step 72Under atmosphere, anneal 10min, completes to photoelectric conversion knot The production of structure.
Embodiment 2, preparation absorb the photovoltaic conversion structure of a length of 505nm of light wave.
Step 1, substrate is pre-processed.
1.1) it by the Sapphire Substrate after cleaning, is placed in metal organic chemical vapor deposition MOCVD reaction chamber, it will be anti- The vacuum degree of room is answered to be reduced to 2 × 10-2Torr；It is passed through hydrogen to reaction chamber, is reached for 750Torr in MOCVD chamber pressure Under the conditions of, it is 1200 DEG C by silicon to temperature, and keep 5min, completes the heat treatment to substrate base.
1.2) substrate after heat treatment is placed in the reaction chamber that temperature is 1100 DEG C, is passed through the ammonia that flow is 4000sccm Gas continues 8min and is nitrogenized.
Step 2, high-temperature AlN layer is grown, such as Fig. 2 (a).
The condition that MOCVD technique is 40Torr for 1100 DEG C, pressure in reaction chamber temperature is used on substrate after nitridation Under, while it being passed through the ammonia that flow is 3500sccm, and the silicon source that flow is 1200sccm hydrogen and flow is 20sccm, growth thickness Degree is the high-temperature AlN nucleating layer of 30nm.
Step 3, i-GaN layers are grown, such as Fig. 2 (b).
Used on AlN nucleating layer MOCVD technique reaction chamber temperature for 1080 DEG C, pressure be 50Torr under conditions of, It is passed through the ammonia that flow is 3500sccm, the gallium source that flow is 1200sccm hydrogen and flow is 150sccm, growth thickness simultaneously For 2.5 μm of i-GaN layer.
Step 4, growing n-type GaN layer, such as Fig. 2 (c).
4a) used on i-GaN layer MOCVD technique reaction chamber temperature for 1080 DEG C, pressure be 60Torr under conditions of, It is passed through the ammonia that flow is 3000sccm simultaneously, flow is the gallium source of 120sccm, and flow is 1200sccm hydrogen and flow is 10sccm silicon source, the GaN that growth thickness is 2.3 μm；
Ion implantation technology 4b) is used, is 1 × 10 to the surface the GaN implantation dosage of growth16cm-1, energy 100keV Sn ion；
Reaction equation temperature 4c) is maintained 800 DEG C, anneal 20min in nitrogen environment.
Step 5, In is grown0.2Ga0.8N/GaN quantum well layer, such as Fig. 2 (d).
The In in 20 periods is grown using MOCVD in n-type GaN layer0.2Ga0.8NGaN Quantum Well, the single layer in each period In0.2Ga0.8The thickness of N well layer and GaN barrier layer is respectively 5nm and 15nm, and the process conditions of growth are as follows:
Pressure is 40Torr, and the flow of nitrogen source is 1100sccm；
In growth In0.2Ga0.8When N well layer, if temperature is 750 DEG C, gallium source flux is 60sccm, and indium source flux is 180sccm；When growing GaN barrier layer, if temperature is 980 DEG C, gallium source flux is 60sccm.
Step 6, p-type GaN layer is grown, such as Fig. 2 (e).
In In0.2Ga0.8Use MOCVD technique growth thickness for the GaN layer of 120nm on N/GaN quantum well layer, technique item Part is as follows:
Reaction chamber temperature is 1100 DEG C, pressure 60Torr；
It is passed through ammonia, hydrogen, gallium source and magnesium source simultaneously, and the flow of ammonia is 3000sccm, the flow of hydrogen is 1200sccm, the flow in gallium source are 180sccm, and the flow in magnesium source is 300sccm.
Step 7, reaction chamber temperature is maintained 950 DEG C, in H2Under atmosphere, anneal 5min, completes to photovoltaic conversion structure Production.
Embodiment 3, preparation absorb the photovoltaic conversion structure of a length of 540nm of light wave.
Step A, pretreatment.
Firstly, be placed in metal organic chemical vapor deposition MOCVD reaction chamber by SiC substrate after over cleaning, it will be anti- The vacuum degree of room is answered to be reduced to 2 × 10-2Torr；It is passed through hydrogen to reaction chamber, is reached for 400Torr in MOCVD chamber pressure Under the conditions of, it is 1000 DEG C by silicon to temperature, and keep 9min, completes the heat treatment to substrate base；
Then, the substrate after heat treatment is placed in the reaction chamber that temperature is 1150 DEG C, is passed through the ammonia that flow is 5000sccm Gas continues 10min and is nitrogenized.
Step B grows high-temperature AlN layer.
Adjust reaction chamber temperature be 960 DEG C, pressure 60Torr, while be passed through flow be 3500sccm ammonia, flow The silicon source for being 40sccm for 1200sccm hydrogen and flow, use on the substrate after nitridation MOCVD technique growth thickness for The high-temperature AlN nucleating layer of 35nm, such as Fig. 2 (a).
Step C grows i-GaN layers.
Adjust reaction chamber temperature be 120 DEG C, pressure 80Torr, while be passed through flow be 4000sccm ammonia, flow The gallium source for being 150sccm for 1200sccm hydrogen and flow, uses MOCVD technique growth thickness for 3.5 μ on AlN nucleating layer The i-GaN layer of m, such as Fig. 2 (b).
Step D, growing n-type GaN layer.
Adjust reaction chamber temperature be 1200 DEG C, pressure 560Torr, while be passed through flow be 3100sccm ammonia, stream Amount is the gallium source of 200sccm, and the silicon source that flow is 1200sccm hydrogen and flow is 14sccm uses MOCVD on i-GaN layer The GaN that technique growth thickness is 3 μm；Sn ion implanting is carried out to the GaN again, implantation dosage is 1 × 101cm-17, energy is 100keV, then reaction equation temperature is maintained 1100 DEG C, anneal 30min in nitrogen environment, such as Fig. 2 (c).
Step E grows In0.23Ga0.77N/GaN quantum well layer.
MOCVD technique is used in n-type GaN layer, holding pressure is 60Torr, grows the In in 20 periods0.23Ga0.77N/ GaN Quantum Well, the single layer IIn in each period0.23Ga0.77The thickness of N well layer and GaN barrier layer is respectively 8nm and 10nm, wherein It keeps the flow of nitrogen source in 1000sccm in growth course, and growth In is respectively set0.23Ga0.77The work of N well layer and GaN barrier layer Skill condition, it may be assumed that
In growth In0.23Ga0.77It is 740 DEG C that reaction chamber temperature is kept when N well layer, and holding gallium source flux is 50sccm, indium source Flow is 200sccm；
It is 980 DEG C that reaction chamber temperature is adjusted when growing GaN barrier layer, and holding gallium source flux is 40sccm, such as Fig. 2 (d).
Step F grows p-type GaN layer.
It uses MOCVD process adjustments reaction chamber temperature for 1000 DEG C, pressure 40Torr, and is passed through flow simultaneously and is The ammonia of 2800sccm, flow be 160sccm gallium source, the magnesium source that flow is 1200sccm hydrogen and flow is 180sccm this Four kinds of gases；Again in In0.23Ga0.77Growth thickness is the p-type GaN layer of 250nm on N/GaN quantum well layer, such as Fig. 2 (e).
Reaction chamber temperature is maintained 900 DEG C, in H by step G2Under atmosphere, anneal 8min, completes to photovoltaic conversion structure Production.
Above description is only three specific examples of the invention, does not constitute any limitation of the invention, it is clear that for this It, all may be without departing substantially from the principle of the present invention, structure after understand the content of present invention and principle for the professional in field In the case of, various modifications and variations in form and details are carried out, but these modifications and variations based on inventive concept are still Within the scope of the claims of the present invention.

Claims (10)

1.一种基于Sn离子注入的氮化物光电转换结构，自下而上包括：衬底(1)、高温AlN成核层(2)、i-GaN层(3)、n型GaN层(4)、InxGa1-xN/GaN量子阱层(5)和p型GaN层(6)，其特征在于：n型GaN层(4)注入有剂量为1×1015-1017cm-2、能量为100keV的Sn离子，以提高对光的吸收率，进而提高光电转换结构的效率。1. A nitride photoelectric conversion structure based on Sn ion implantation, including from bottom to top: substrate (1), high-temperature AlN nucleation layer (2), i-GaN layer (3), n-type GaN layer (4 ), In x Ga 1-x N/GaN quantum well layer (5) and p-type GaN layer (6), characterized in that: n-type GaN layer (4) is implanted with a dose of 1×10 15 -10 17 cm - 2. Sn ions with an energy of 100keV to increase the absorption rate of light, thereby increasing the efficiency of the photoelectric conversion structure. 2.根据权利要求1所述的光电转换结构，其特征在于：所述的衬底(1)采用蓝宝石或SiC材料。2. The photoelectric conversion structure according to claim 1, characterized in that: said substrate (1) is made of sapphire or SiC material. 3.根据权利要求1所述的光电转换结构，其特征在于：3. The photoelectric conversion structure according to claim 1, characterized in that: 所述的高温AlN成核层(2)的厚度为25-35nm；The thickness of the high-temperature AlN nucleation layer (2) is 25-35nm; 所述的i-GaN层(3)的厚度为2.5-3.5μm；The thickness of the i-GaN layer (3) is 2.5-3.5 μm; 所述的n型GaN层(4)的厚度为1.5-3μm；The thickness of the n-type GaN layer (4) is 1.5-3 μm; 所述的p型GaN层(6)的厚度为120-250nm。The thickness of the p-type GaN layer (6) is 120-250nm. 4.根据权利要求1所述的光电转换结构，其特征在于：InxGa1-xN/GaN量子阱层(5)的量子阱周期数为10-30，每个周期的InxGa1-xN阱层和GaN垒层的厚度分别为1-5nm和8-14nm，In含量x的调整范围为0.15-0.25。4. The photoelectric conversion structure according to claim 1, characterized in that: the quantum well period number of the In x Ga 1-x N/GaN quantum well layer (5) is 10-30, and the In x Ga 1 of each period -x The thicknesses of the N well layer and the GaN barrier layer are 1-5nm and 8-14nm respectively, and the adjustment range of In content x is 0.15-0.25. 5.一种基于Sn离子注入的氮化物光电转换结构的制备方法，包括如下步骤：5. A method for preparing a nitride photoelectric conversion structure based on Sn ion implantation, comprising the steps of: 1)对衬底进行加热和高温氮化的预处理；1) Pretreatment of heating and high-temperature nitriding of the substrate; 2)在预处理后的衬底上采用MOCVD工艺生长25-35nm的AlN成核层；2) growing a 25-35nm AlN nucleation layer on the pretreated substrate by MOCVD process; 3)在AlN成核层上采用MOCVD工艺生长2.5-3.5μm的i-GaN层；3) growing a 2.5-3.5 μm i-GaN layer on the AlN nucleation layer by MOCVD process; 4)生长n型GaN层4) Growth of n-type GaN layer 4a)在i-GaN层上采用MOCVD工艺生长1.5-3μm的GaN，4a) Grown 1.5-3 μm GaN on the i-GaN layer by MOCVD process, 4b)采用离子注入工艺在生长的GaN表层进行剂量为1×1015-1017cm-2，能量为100keV的Sn离子注入；4b) Implanting Sn ions with a dose of 1×10 15 -10 17 cm -2 and an energy of 100keV on the surface of the grown GaN by using an ion implantation process; 4c)将反应式温度调整为500-1100℃，在氮气环境中退火10-30min，完成对N型GaN层的制作；4c) Adjust the temperature of the reaction formula to 500-1100° C., anneal for 10-30 minutes in a nitrogen environment, and complete the fabrication of the N-type GaN layer; 5)在n型GaN层上采用MOCVD工艺生长周期数为10-30的InxGa1-xN/GaN量子阱层，每个周期的InxGa1-xN阱层和GaN垒层的厚度分别为3-8nm和8-15nm，In含量x的调整范围为0.15-0.25；5) On the n-type GaN layer, the In x Ga 1-x N/GaN quantum well layer with a cycle number of 10-30 is grown by MOCVD process, and the In x Ga 1-x N well layer and the GaN barrier layer of each cycle The thicknesses are 3-8nm and 8-15nm respectively, and the adjustment range of In content x is 0.15-0.25; 6)在InxGa1-xN/GaN量子阱层上采用MOCVD工艺生长厚度为120-250nm的p型GaN层；6) On the In x Ga 1-x N/GaN quantum well layer, a p-type GaN layer with a thickness of 120-250 nm is grown by MOCVD process; 7)将反应室温度维持在900-1050℃，在H2气氛下，退火4-8min，完成对光电转换结构的制作。7) Maintain the temperature of the reaction chamber at 900-1050° C., anneal for 4-8 minutes under H 2 atmosphere, and complete the fabrication of the photoelectric conversion structure. 6.根据权利要求5所述的方法，其特征在于，步骤2)中采用的MOCVD工艺，是对反应室设置如下条件参数：6. method according to claim 5, is characterized in that, the MOCVD process that adopts in step 2) is to set following conditional parameter to reaction chamber: 反应室温度为960-1100℃、压力为20-60Torr；The reaction chamber temperature is 960-1100°C and the pressure is 20-60Torr; 向反应室中同时通入流量为2500-3500sccm的氨气、流量为1200sccm的氢气和流量为20-40sccm的铝源这三种气体。The three gases of ammonia gas with a flow rate of 2500-3500 sccm, hydrogen gas with a flow rate of 1200 sccm and aluminum source with a flow rate of 20-40 sccm are simultaneously introduced into the reaction chamber. 7.根据权利要求5所述的方法，其特征在于，步骤3)中采用的MOCVD工艺，是对反应室设置如下条件参数：7. method according to claim 5, it is characterized in that, the MOCVD process that adopts in step 3) is to set following condition parameter to reaction chamber: 反应室温度为980-1200℃、压力为30-80Torr；The temperature of the reaction chamber is 980-1200°C and the pressure is 30-80Torr; 向反应室同时通入流量为2500-4000sccm的氨气、流量为1200sccm的氢气和流量为150-180sccm的镓源这三种气体。Ammonia gas with a flow rate of 2500-4000 sccm, hydrogen gas with a flow rate of 1200 sccm and gallium source with a flow rate of 150-180 sccm are simultaneously fed into the reaction chamber. 8.根据权利要求5所述的方法，其特征在于，步骤4)中采用的MOCVD工艺，是对反应室设置如下条件参数：8. method according to claim 5, is characterized in that, the MOCVD process that adopts in step 4) is to set following conditional parameter to reaction chamber: 反应室温度为1000-1200℃、压力为20-60Torr；The temperature of the reaction chamber is 1000-1200°C and the pressure is 20-60Torr; 向反应室中同时通入流量为2500-3100sccm的氮源、流量为40-200sccm的镓源、流量为1200sccm的氢气和流量为10-30sccm的硅源这四种气体。The nitrogen source with a flow rate of 2500-3100 sccm, the gallium source with a flow rate of 40-200 sccm, the hydrogen gas with a flow rate of 1200 sccm and the silicon source with a flow rate of 10-30 sccm are simultaneously fed into the reaction chamber. 9.根据权利要求5所述的方法，其特征在于，步骤5)中采用的MOCVD工艺，是对反应室设置如下条件参数：9. method according to claim 5, is characterized in that, the MOCVD process that adopts in step 5) is to set following condition parameter to reaction chamber: 反应室温度为740-760℃、压力为20-60Torr，The temperature of the reaction chamber is 740-760°C, the pressure is 20-60Torr, 向反应室中同时通入流量为1000-1200sccm的氮源、流量为40-80sccm的镓源、和流量为160-200sccm的铟源这三种气体。The nitrogen source with a flow rate of 1000-1200 sccm, the gallium source with a flow rate of 40-80 sccm, and the indium source with a flow rate of 160-200 sccm are simultaneously fed into the reaction chamber. 10.根据权利要求5所述的方法，其特征在于，步骤6)采用的MOCVD工艺，是对反应室设置如下条件参数：10. method according to claim 5, it is characterized in that, the MOCVD process that step 6) adopts is to set following condition parameter to reaction chamber: 反应室温度为950-1100℃、压力为20-60Torr；The temperature of the reaction chamber is 950-1100°C and the pressure is 20-60Torr; 向反应室同时通入流量为2500-3000sccm的氨气、流量为150-180sccm的镓源、流量为1200sccm的氢气和流量为100-300sccm的镁源这四种气体。Four gases, namely, ammonia gas with a flow rate of 2500-3000 sccm, gallium source with a flow rate of 150-180 sccm, hydrogen gas with a flow rate of 1200 sccm and magnesium source with a flow rate of 100-300 sccm, are fed into the reaction chamber simultaneously.
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