CN109004098A - A kind of novel OLED device and its display, lighting device - Google Patents
A kind of novel OLED device and its display, lighting device Download PDFInfo
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- CN109004098A CN109004098A CN201810875410.9A CN201810875410A CN109004098A CN 109004098 A CN109004098 A CN 109004098A CN 201810875410 A CN201810875410 A CN 201810875410A CN 109004098 A CN109004098 A CN 109004098A
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- 239000000463 material Substances 0.000 claims abstract description 21
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 13
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- 230000003447 ipsilateral effect Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 230000005684 electric field Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of novel OLED device and its displays, lighting device, it successively include: glass substrate, reflection anode, reflective cathode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer according to light exit direction, and the reflection anode and the reflective cathode are respectively positioned on the ipsilateral of the luminescent layer；Since light-emitting face does not have metal layer blocking in the structure, electric field is laterally applied to by electron transfer layer (ETL), and electron transfer layer uses n-type doping or metal-doped materials, it is possible to prevente effectively from the plasma effect that cathode emergent light occurs, to improve the luminous efficiency of OLED device.
Description
Technical field
The invention belongs to show lighting technical field, and in particular to a kind of novel OLED device and its display, lighting device.
Background technique
Since C.W.Tang 1987 publish an article on Applied Physics flash report, organic light emitting display
(OLED) remarkable break-throughs have been obtained, OLED device is active luminescent device, compares existing mainstream display technology film crystal
Pipe liquid crystal display (TFT-LCD), OLED have many advantages, such as that wide viewing angle, highlighted, high contrast, low energy consumption and volume are more frivolous,
It is current flat panel display focus of attention.Currently, the structure of OLED top emitting device mainly includes reflection anode (RE), sky
Cave implanted layer (HIL), hole transmission layer (HTL), luminescent layer (EML), electron transfer layer (ETL), electron injecting layer (EIL), with
And cathode (Cathode) stacks gradually composition, as shown in Fig. 1, the reflection anode and cathode of OLED top emitting device exist respectively
The two sides of OLED luminescent layer, but the OLED top emitting device disadvantage of the structure is that OLED efficiency is too low.
The efficiency of OLED is determined that theoretically the external quantum efficiency of electroluminescent device can use formula by several factors
(1) it states:
ηqext=Φ ηrηe (1)
Wherein, ηqextFor the external quantum efficiency (photon/electronics) of device；Φ is the probability of excitonic luminescence, is up to 1；ηrFor
The formation probability of exciton, is up to 1 in luminescent layer；ηeThe probability of device, i.e. coupling efficiency out, η are overflowed for photoneWith device
Structural relation is very big；The coupling efficiency out of traditional bottom emitting OLED device is very low, as shown in Fig. 2, less than 20%.Separately
Outside, although the top-emitting OLED structure of mainstream is without substrate mode at present, translucent Mg can be penetrated due to going out light side:
Free electron in Ag metal, photon and metal can occur to interact and generate surface plasma bulk effect, such as 3 institute of attached drawing
Show, influences the luminous efficiency of OLED device.
Summary of the invention
For the drawbacks described above for overcoming the prior art, the purpose of the present invention is to provide a kind of novel OLED device and its preparations
Technique eliminates surface plasma bulk effect by structure design, improves the luminous efficiency of OLED device, also provides containing above-mentioned
The display device and lighting device of novel OLED device.
Above-mentioned purpose of the invention is achieved through the following technical solutions:
In a first aspect, novel OLED device, successively includes: glass substrate, reflection anode, reflection yin according to light exit direction
Pole, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, and the reflection anode and described anti-
It penetrates cathode and is respectively positioned on the ipsilateral of the luminescent layer.
Preferably, the reflective cathode is placed in the glass substrate and is connected with the electron transfer layer, and with the reflection
Anode, the hole injection layer, the hole transmission layer and the luminescent layer are adjacent；The reflection anode is placed in the glass base
On plate, the hole injection layer, the hole transmission layer, the luminescent layer, and the luminescent layer and institute have been stacked gradually thereon
Electron transfer layer is stated to be connected.
Preferably, the electron transfer layer with a thickness ofIncluding material of main part and dopant material；Wherein, described
Dopant material is N-type heavily doped material or metal-doped materials, and mass percent is 0.1%-15%；The metal-doped material
Material includes Li and/or Yb；It is furthermore preferred that the electron mobility of the electron transport layer materials is greater than 1 × 10-3cm2/Vs。
Preferably, the reflection anode and reflective cathode are metal or metal alloy；It is furthermore preferred that the reflective cathode
For Ag or Ag alloy, and the reflectivity of the reflective cathode and reflection anode under the conditions of 550nm is greater than 85%.
Second aspect, the preparation process of above-mentioned novel OLED device, specifically, comprising the following steps:
(1) first reflection anode and reflective cathode will be formed in metal material deposition or spraying plating to base material；
(2) hole injection layer is formed in the reflection anode by vacuum vapor deposition method again, wherein the vacuum evaporation
Process conditions include: that depositing temperature is 50-500 DEG C, vacuum degree 10-8-10-3Support, deposition rate areDeposition of thick
Degree isHole transmission layer is sequentially formed on the hole injection layer according to above-mentioned identical process conditions and is shone
Layer and electron transfer layer.
In certain embodiments, any substrate used in conventional organic EL device can be used, and can be preferred
Using with good mechanical strength, thermal stability, transparency, Surface softness, tractability and water resistance glass substrate or
Transparent plastic substrate.In addition, in addition to vacuum evaporation technology can be used in above-mentioned technique, can also using spin coating, casting or
Langmuir-Blodgett (LB) method.
The third aspect, OLED display, including such as above-mentioned novel OLED device.
Fourth aspect, OLED lighting device, including such as above-mentioned novel OLED device.
Compared with prior art, the beneficial effects of the present invention are:
One, in novel OLED device of the invention, reflection anode and reflective cathode are all located at the ipsilateral of luminescent layer, light outgoing
Face does not have metal layer blocking, it is possible to prevente effectively from the plasma effect that cathode emergent light occurs, to improve OLED device
Luminous efficiency.
Two, electric field is laterally applied to by electron transfer layer (ETL) in the present invention, and electron transfer layer using n-type doping or
Metal-doped materials have very high mobility, are greater than 1 × 10-3cm2/ Vs, no plasma lose, OLED device effect
Rate can be improved one times or more.
Detailed description of the invention
Fig. 1 is existing OLED device structural schematic diagram；
Fig. 2 is the coupling efficiency out of traditional bottom emitting OLED device；
Fig. 3 is the plasma effect on OLED device surface；
Fig. 4 is novel OLED device structural schematic diagram of the invention；
Fig. 5 is existing OLED device effect picture；
Fig. 6 is novel OLED device effect picture of the invention；
Fig. 7 is the structural schematic diagram of ITO/TPD/AlQ/Ag device；
Fig. 8 is the analog result based on ITO/TPD/AlQ/Ag device plasma bulk effect.
Specific embodiment
The technical solution that the invention will now be described in detail with reference to the accompanying drawings, but protection scope of the present invention is not limited to following realities
Apply example.
Referring to attached drawing 1-3, for traditional OLED device, including transmitting anode (RE), hole injection layer (HIL), hole transport
Layer (HTL), luminescent layer (EML), electron transfer layer (ETL), electron injecting layer (EIL) and cathode (Cathode) stack gradually
It constitutes, reflection anode and cathode are respectively in the two sides of luminescent layer, and as shown in Fig. 1, the OLED device disadvantage of the structure is
OLED efficiency is too low；The coupling efficiency out of traditional bottom emitting OLED device is very low, less than 20%, as shown in Fig. 2；Knot
There is no substrate mode in structure, light side penetrates translucent Mg:Ag metal out, and with the free electron in metal phase can occur for photon
Interaction and generate surface plasma bulk effect, influence the luminous efficiency of OLED device, as shown in Fig. 3.
Referring to attached drawing 4, novel OLED device successively includes: glass substrate, reflection anode, reflection according to light exit direction
Cathode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, and reflection anode and reflective cathode
It is respectively positioned on the ipsilateral of luminescent layer；Wherein, electron transfer layer uses N-type heavily doped material or metal-doped materials, electron mobility
Greater than 1 × 10-3cm2/Vs；Reflective cathode is metal or metal alloy, generally uses Ag or Ag alloy.In addition, reflective cathode is set
It is connected in glass substrate with electron transfer layer, and adjacent with reflection anode, hole injection layer, hole transmission layer and luminescent layer；Instead
Shining sun pole is placed on glass substrate, has stacked gradually hole injection layer, hole transmission layer, luminescent layer, and luminescent layer and electricity thereon
Sub- transport layer is connected.
LTPS technology is the backplane manufacturing process of current AMOLED display industry mainstream, referring to attached drawing 5, traditional OLED device
Preparation process are as follows: 1) backplane fabrication process: be followed successively by upwards from glass substrate buffer layer, polysilicon layer, metal layer 1, insulation
Layer 1, metal layer 2, insulating layer 2, planarization layer, reflection anode layer, pixel defining layer, supporting layer.2) it OLED manufacturing process: uses
Vacuum evaporation process, sequence is successively are as follows: HIL (uses Open mask)；HTL (uses Open mask)；R prime, R EML layer
(using Fine metal mask)；G prime, G EML layers (using FMM)；EML layers of B (uses FMM)；ETL layers (use
Open mask)；Cathode layers (using Open mask).
Referring to attached drawing 6, the preparation process of novel OLED device of the present invention are as follows: 1) backplane fabrication process: from glass substrate to
On be followed successively by buffer layer, polysilicon layer, metal layer 1, insulating layer 1, metal layer 2, insulating layer 2, planarization layer, transmitting anode layer,
Emitting cathode layer, pixel defining layer, supporting layer, with traditional handicraft the difference is that increasing after the completion of emitting anodic process
The preparation process of one layer of emitting cathode.2) vacuum evaporation process, vapor deposition sequence and the mask that uses OLED manufacturing process: are used
Situation is as follows: HIL (FMM)；HTL(FMM)；R prime,R EML(FMM)；G prime,G EML(FMM)；B EML(FMM)；
ETL(Open mask)；Cathode layers are not needed.Meanwhile because HTL, HIL all use FMM, sub- picture can completely avoid
Leakage current situation between element.
By the ITO/TPD/AlQ/Ag device of structure as shown in Fig. 7, it is possible to prevente effectively from cathode emergent light occur etc. from
Daughter effect, the analog result based on above-mentioned ITO/TPD/AlQ/Ag device are as shown in Fig. 8, it can be seen that more than 50% or more
OLED device efficiency lost by surface plasma, it follows that novel OLED device prepared by the present invention it is equal from
Daughter loses, and efficiency can be improved one times or more.
The above is presently preferred embodiments of the present invention, but the present invention should not be limited to disclosed in the embodiment
Content.So all do not depart from the lower equivalent or modification completed of spirit disclosed in this invention, the model that the present invention protects is both fallen within
It encloses.
Claims (10)
1. a kind of novel OLED device, which is characterized in that according to light exit direction successively include: glass substrate, reflection anode, anti-
Penetrate cathode, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer, and the reflection anode and institute
It states reflective cathode and is respectively positioned on the ipsilateral of the luminescent layer.
2. novel OLED device as described in claim 1, which is characterized in that the electron transfer layer includes material of main part and mixes
Miscellaneous material；Wherein, the dopant material is N-type heavily doped material or metal-doped materials, and mass percent is 0.1%-
15%.
3. novel OLED device as claimed in claim 1 or 2, which is characterized in that the metal-doped materials include Li and/or
Yb。
4. novel OLED device as claimed in claim 1 or 2, which is characterized in that the electronics of the electron transport layer materials moves
Shifting rate is greater than 1 × 10-3cm2/ Vs, with a thickness of
5. novel OLED device as described in claim 1, which is characterized in that
The reflective cathode is metal or metal alloy；
The reflection anode is metal or metal alloy.
6. novel OLED device as described in claim 1, which is characterized in that
The reflective cathode is placed in the glass substrate and is connected with the electron transfer layer, and with the reflection anode, the sky
Cave implanted layer, the hole transmission layer and the luminescent layer are adjacent；
The reflection anode is placed on the glass substrate, has stacked gradually the hole injection layer, the hole transport thereon
Layer, the luminescent layer, and the luminescent layer is connected with the electron transfer layer.
7. novel OLED device as described in claim 1, which is characterized in that the reflective cathode and reflection anode are in 550nm
Under the conditions of reflectivity be all larger than 85%.
8. such as the preparation process of the described in any item novel OLED devices of claim 1-7, which is characterized in that including following step
It is rapid:
(1) first reflection anode and reflective cathode will be formed in metal material deposition or spraying plating to base material；
(2) hole injection layer is formed in the reflection anode by vacuum vapor deposition method again, wherein the technique of the vacuum evaporation
Condition includes: that depositing temperature is 50-500 DEG C, vacuum degree 10-8-10-3Support, deposition rate areDeposition thickness isAccording to above-mentioned identical process conditions sequentially formed on the hole injection layer hole transmission layer and luminescent layer and
Electron transfer layer.
9. a kind of OLED display, which is characterized in that including the novel OLED device as described in claim any one of 1-7.
10. a kind of OLED lighting device, which is characterized in that including the novel OLED device as described in claim any one of 1-7.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810875410.9A CN109004098A (en) | 2018-08-03 | 2018-08-03 | A kind of novel OLED device and its display, lighting device |
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| CN201810875410.9A CN109004098A (en) | 2018-08-03 | 2018-08-03 | A kind of novel OLED device and its display, lighting device |
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| CN109004098A true CN109004098A (en) | 2018-12-14 |
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| CN201810875410.9A Pending CN109004098A (en) | 2018-08-03 | 2018-08-03 | A kind of novel OLED device and its display, lighting device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110085755A (en) * | 2019-05-09 | 2019-08-02 | 陕西科技大学 | A kind of novel inversion type top emission OLED device and preparation method thereof |
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| CN104795506A (en) * | 2015-04-15 | 2015-07-22 | 上海大学 | Quantum-dot LED structure and manufacturing method thereof |
| CN107302011A (en) * | 2016-04-14 | 2017-10-27 | 群创光电股份有限公司 | Display device |
| CN107564422A (en) * | 2016-06-30 | 2018-01-09 | 群创光电股份有限公司 | Light emitting diode display device |
| CN107742636A (en) * | 2017-10-25 | 2018-02-27 | 上海天马微电子有限公司 | Display panel and display device |
| CN208422959U (en) * | 2018-08-03 | 2019-01-22 | 上海钥熠电子科技有限公司 | A kind of novel OLED device and its display, lighting device |
-
2018
- 2018-08-03 CN CN201810875410.9A patent/CN109004098A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102244204A (en) * | 2011-07-04 | 2011-11-16 | 陕西科技大学 | OLED device and preparation method thereof |
| CN104795506A (en) * | 2015-04-15 | 2015-07-22 | 上海大学 | Quantum-dot LED structure and manufacturing method thereof |
| CN107302011A (en) * | 2016-04-14 | 2017-10-27 | 群创光电股份有限公司 | Display device |
| CN107564422A (en) * | 2016-06-30 | 2018-01-09 | 群创光电股份有限公司 | Light emitting diode display device |
| CN107742636A (en) * | 2017-10-25 | 2018-02-27 | 上海天马微电子有限公司 | Display panel and display device |
| CN208422959U (en) * | 2018-08-03 | 2019-01-22 | 上海钥熠电子科技有限公司 | A kind of novel OLED device and its display, lighting device |
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Application publication date: 20181214 |