CN108899283A - The encapsulating structure and its packaging method of ball grid array - Google Patents
The encapsulating structure and its packaging method of ball grid array Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000003466 welding Methods 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims description 373
- 229920005989 resin Polymers 0.000 claims description 70
- 239000011347 resin Substances 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 50
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 35
- 238000005476 soldering Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000008393 encapsulating agent Substances 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
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- 150000001875 compounds Chemical class 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
Description
技术领域technical field
本发明涉及半导体封装技术领域，尤其涉及一种球栅阵列的封装结构及其封装方法。The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure of a ball grid array and a packaging method thereof.
背景技术Background technique
球栅阵列（Ball Grid Array，简称BGA）封装技术为应用在集成电路上的一种表面黏着技术，此技术常用来永久固定如微处理器之类的的装置。BGA封装能提供比其他如双列直插封装（Dual in-line package）或四侧引脚扁平封装（Quad Flat Package）所容纳更多的接脚，整个装置的底部表面可全作为接脚使用，而不是只有周围可使用，比起周围限定的封装类型还能具有更短的平均导线长度，以具备更佳的高速效能；BGA封装是在封装体基板的底部制作阵列，焊球作为电路的I/O端与印刷线路板（PCB）互接。Ball Grid Array (BGA for short) packaging technology is a surface mount technology applied to integrated circuits. This technology is often used to permanently fix devices such as microprocessors. BGA package can provide more pins than others such as dual in-line package (Dual in-line package) or quad flat package (Quad Flat Package), and the bottom surface of the entire device can be used as pins , instead of only being used around the surrounding area, it can have a shorter average wire length than the surrounding package type, so as to have better high-speed performance; the BGA package is to make an array on the bottom of the package substrate, and the solder balls are used as the circuit. The I/O terminal is interconnected with the printed circuit board (PCB).
焊球具有电性连接、热传导的功能。焊球的排布方式可分为周边行、交错型和全阵列型BGA。现有的BGA封装，基板背面的焊球一般都是相同的焊球。焊球越大，热传导能力越强，但是，同时，焊球越大，所占用基板面积越大，有违于BGA的高密度高脚位输出；而且，由于基板、印刷线路板与金属焊球的膨胀系数差异比较大，在热胀冷缩条件下，基板封装后的焊球越大，意味着基板背面与印刷线路板之间的金属面积越大，产生的剪切应力也越大，容易导致焊球的焊接点断裂。而如果采用比较小的焊球，一方面不利于封装体内功能芯片的热导出，另一方面，封装体四个角落的焊球在跌落碰撞中容易断裂。Solder balls have the functions of electrical connection and heat conduction. The arrangement of solder balls can be divided into peripheral row, staggered and full array BGA. In the existing BGA package, the solder balls on the back of the substrate are generally the same solder balls. The larger the solder ball, the stronger the thermal conductivity, but at the same time, the larger the solder ball, the larger the substrate area occupied, which is contrary to the high-density and high-pin output of the BGA; and, due to the substrate, the printed circuit board and the metal solder ball The difference in expansion coefficient is relatively large. Under the condition of thermal expansion and contraction, the larger the solder ball after the substrate is packaged, the larger the metal area between the back of the substrate and the printed circuit board, and the greater the shear stress generated. Causes the solder joints of the solder balls to break. However, if relatively small solder balls are used, on the one hand, it is not conducive to the heat conduction of the functional chips in the package, and on the other hand, the solder balls at the four corners of the package are easy to break when dropped and collided.
发明内容Contents of the invention
本发明的目的在于提供一种球栅阵列的封装结构及其封装方法。The object of the present invention is to provide a packaging structure of a ball grid array and a packaging method thereof.
为实现上述发明目的之一，本发明提供了一种球栅阵列的封装方法，所述封装方法包括：提供一基板，所述基板的一侧表面至少具有用于设置焊球的第一区域及第二区域；In order to achieve one of the objectives of the above invention, the present invention provides a ball grid array packaging method, the packaging method includes: providing a substrate, one side surface of the substrate has at least a first area for arranging solder balls and second area;
于所述第一区域焊接至少一个第一焊球，于所述第二区域焊接至少一个第二焊球，其中，所述第一焊球与所述第二焊球的至少一参数不同，所述参数包括热传导性能、热膨胀系数及尺寸。Welding at least one first solder ball in the first region, and soldering at least one second solder ball in the second region, wherein the first solder ball is different from the second solder ball in at least one parameter, so The parameters mentioned include thermal conductivity, thermal expansion coefficient and size.
作为本发明一实施方式的进一步改进，所述第一区域对应功能芯片，所述第一焊球具有第一热传导性能，所述第二焊球具有第二热传导性能，所述第一热传导性能大于所述第二热传导性能。As a further improvement of an embodiment of the present invention, the first region corresponds to a functional chip, the first solder ball has a first thermal conductivity, the second solder ball has a second thermal conductivity, and the first thermal conductivity is greater than The second thermal conductivity performance.
作为本发明一实施方式的进一步改进，所述第一焊球为金属焊球，所述第二焊球为树脂焊球或全锡焊球至少其中之一，所述第一焊球具有第一尺寸，所述第二焊球具有第二尺寸，所述第一尺寸等于所述第二尺寸；As a further improvement of an embodiment of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball or a full-tin solder ball, and the first solder ball has a first size, the second solder ball has a second size, the first size is equal to the second size;
所述金属焊球包括：第一内核及包覆第一内核的第一外核，所述第一内核为导热性能及熔点均高于锡的金属材质，所述第一外核为锡材质；所述树脂焊球包括：第二内核及包覆第二内核的第二外核，所述第二内核为树脂材质，所述第二外核为锡材质；所述全锡焊球的材质为锡；所述树脂焊球的膨胀系数低于所述金属焊球的膨胀系数；所述全锡焊球的膨胀系数低于所述金属焊球的膨胀系数。The metal solder ball includes: a first inner core and a first outer core covering the first inner core, the first inner core is made of a metal material with higher thermal conductivity and melting point than tin, and the first outer core is made of tin; The resin solder ball includes: a second inner core and a second outer core covering the second inner core, the second inner core is made of resin, and the second outer core is made of tin; the material of the all-tin solder ball is tin; the expansion coefficient of the resin solder ball is lower than that of the metal solder ball; the expansion coefficient of the all-tin solder ball is lower than that of the metal solder ball.
作为本发明一实施方式的进一步改进，所述第一焊球为全锡焊球，所述第二焊球包括树脂焊球，所述第一焊球具有第一尺寸，所述第二焊球具有第二尺寸，所述第一尺寸等于所述第二尺寸；As a further improvement of an embodiment of the present invention, the first solder ball is an all-tin solder ball, the second solder ball includes a resin solder ball, the first solder ball has a first size, and the second solder ball having a second size, the first size being equal to the second size;
所述树脂焊球包括：第二内核及包覆第二内核的第二外核，所述第二内核为树脂材质，所述第二外核为锡材质；所述全锡焊球的材质为锡；所述树脂焊球的膨胀系数低于所述全锡焊球的膨胀系数。The resin solder ball includes: a second inner core and a second outer core covering the second inner core, the second inner core is made of resin, and the second outer core is made of tin; the material of the all-tin solder ball is tin; the expansion coefficient of the resin solder ball is lower than that of the full-tin solder ball.
作为本发明一实施方式的进一步改进，所述第二焊球还包括全锡焊球。As a further improvement of an embodiment of the present invention, the second solder balls further include full-tin solder balls.
为了实现上述发明目的另一，本发明一实施方式提供一种球栅阵列的封装结构，所述封装结构包括：基板，设置于所述基板上表面的元器件，用于封装所述元器件的塑封料，以及植入所述基板下方的焊球；In order to achieve the other object of the above invention, an embodiment of the present invention provides a package structure of a ball grid array, the package structure includes: a substrate, components arranged on the upper surface of the substrate, and components used to package the components a molding compound, and solder balls implanted under said substrate;
所述焊球包括至少一参数不同的第一焊球及第二焊球，所述参数包括热传导性能、热膨胀系数及尺寸；The solder balls include a first solder ball and a second solder ball with at least one parameter different, the parameters including thermal conductivity, thermal expansion coefficient and size;
所述基板下表面至少具有用于植入第一焊球的第一区域及用于植入第二焊球的第二区域。The lower surface of the substrate has at least a first area for implanting first solder balls and a second area for implanting second solder balls.
作为本发明一实施方式的进一步改进，所述元器件包括功能芯片，对应所述功能芯片的基板下方为第一区域，所述第一焊球具有第一热传导性能，所述第二焊球具有第二热传导性能，所述第一热传导性能大于所述第二热传导性能。As a further improvement of an embodiment of the present invention, the component includes a functional chip, and a first region is located below the substrate corresponding to the functional chip, the first solder ball has a first heat conduction performance, and the second solder ball has a A second heat conduction performance, the first heat conduction performance is greater than the second heat conduction performance.
作为本发明一实施方式的进一步改进，所述第一焊球为金属焊球，所述第二焊球为树脂焊球或全锡焊球至少其中之一，所述第一焊球具有第一尺寸，所述第二焊球具有第二尺寸，所述第一尺寸等于所述第二尺寸；As a further improvement of an embodiment of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball or a full-tin solder ball, and the first solder ball has a first size, the second solder ball has a second size, the first size is equal to the second size;
所述金属焊球包括：第一内核及包覆第一内核的第一外核，所述第一内核为导热性能及熔点均高于锡的金属材质，所述第一外核为锡材质；所述树脂焊球包括：第二内核及包覆第二内核的第二外核，所述第二内核为树脂材质，所述第二外核为锡材质；所述全锡焊球的材质为锡；所述树脂焊球的膨胀系数低于所述金属焊球的膨胀系数；所述全锡焊球的膨胀系数低于所述金属焊球的膨胀系数。The metal solder ball includes: a first inner core and a first outer core covering the first inner core, the first inner core is made of a metal material with higher thermal conductivity and melting point than tin, and the first outer core is made of tin; The resin solder ball includes: a second inner core and a second outer core covering the second inner core, the second inner core is made of resin, and the second outer core is made of tin; the material of the all-tin solder ball is tin; the expansion coefficient of the resin solder ball is lower than that of the metal solder ball; the expansion coefficient of the all-tin solder ball is lower than that of the metal solder ball.
作为本发明一实施方式的进一步改进，所述第一焊球为全锡焊球，所述第二焊球包括树脂焊球，所述第一焊球具有第一尺寸，所述第二焊球具有第二尺寸，所述第一尺寸等于所述第二尺寸；As a further improvement of an embodiment of the present invention, the first solder ball is an all-tin solder ball, the second solder ball includes a resin solder ball, the first solder ball has a first size, and the second solder ball having a second size, the first size being equal to the second size;
所述树脂焊球包括：第二内核及包覆第二内核的第二外核，所述第二内核为树脂材质，所述第二外核为锡材质；所述全锡焊球的材质为锡；所述树脂焊球的膨胀系数低于所述全锡焊球的膨胀系数。The resin solder ball includes: a second inner core and a second outer core covering the second inner core, the second inner core is made of resin, and the second outer core is made of tin; the material of the all-tin solder ball is tin; the expansion coefficient of the resin solder ball is lower than that of the full-tin solder ball.
作为本发明一实施方式的进一步改进，所述第二焊球还包括全锡焊球。As a further improvement of an embodiment of the present invention, the second solder balls further include full-tin solder balls.
本发明的有益效果是：本发明的球栅阵列的封装结构及其封装方法，在基板下方划定多个焊接区域，并在每个焊接区域焊接至少一参数不同的焊球，所述参数包括热传导性能、热膨胀系数及尺寸；如此，可以根据每个焊接区域的具体需求焊接具有不同参数的焊球，进而提升球栅阵列的封装结构的整体性能。The beneficial effects of the present invention are: the packaging structure of the ball grid array and the packaging method thereof of the present invention define a plurality of welding areas under the substrate, and weld at least one solder ball with different parameters in each welding area, and the parameters include Thermal conductivity, thermal expansion coefficient and size; in this way, solder balls with different parameters can be soldered according to the specific requirements of each soldering area, thereby improving the overall performance of the package structure of the ball grid array.
附图说明Description of drawings
图1是本发明第一实施方式提供的球栅阵列的封装方法的流程示意图；FIG. 1 is a schematic flowchart of a ball grid array packaging method provided in a first embodiment of the present invention;
图2是本发明第二实施方式提供的球栅阵列的封装方法的流程示意图；FIG. 2 is a schematic flowchart of a packaging method for a ball grid array provided in a second embodiment of the present invention;
图3是本发明一实施方式提供的球栅阵列的封装结构俯视结构示意图；FIG. 3 is a schematic top view of a package structure of a ball grid array provided in an embodiment of the present invention;
图4A是本发明第一实施方式提供的球栅阵列的封装结构的侧剖结构示意图；FIG. 4A is a schematic side sectional structural view of the package structure of the ball grid array provided in the first embodiment of the present invention;
图4B是本发明第一实施方式提供的球栅阵列的封装结构的仰视结构示意图；4B is a schematic bottom view of the package structure of the ball grid array provided in the first embodiment of the present invention;
图5A是本发明第一实施方式提供的球栅阵列的封装结构的侧剖结构示意图；5A is a schematic side sectional structural view of the package structure of the ball grid array provided in the first embodiment of the present invention;
图5B是本发明第一实施方式提供的球栅阵列的封装结构的仰视结构示意图；5B is a schematic bottom view of the packaging structure of the ball grid array provided in the first embodiment of the present invention;
图6A是本发明第二实施方式提供的球栅阵列的封装结构的侧剖结构示意图；FIG. 6A is a schematic side sectional structural view of the package structure of the ball grid array provided by the second embodiment of the present invention;
图6B是本发明第二实施方式提供的球栅阵列的封装结构的仰视结构示意图；6B is a schematic bottom view of the package structure of the ball grid array provided in the second embodiment of the present invention;
图7A是本发明第三实施方式提供的球栅阵列的封装结构的侧剖结构示意图；FIG. 7A is a schematic side sectional structural view of a package structure of a ball grid array provided in the third embodiment of the present invention;
图7B是本发明第三实施方式提供的球栅阵列的封装结构的仰视结构示意图；7B is a schematic bottom view of the package structure of the ball grid array provided in the third embodiment of the present invention;
图8A是本发明第四实施方式提供的球栅阵列的封装结构的侧剖结构示意图；FIG. 8A is a schematic side sectional structural view of a package structure of a ball grid array provided in a fourth embodiment of the present invention;
图8B是本发明第四实施方式提供的球栅阵列的封装结构的仰视结构示意图；8B is a schematic bottom view of the package structure of the ball grid array provided in the fourth embodiment of the present invention;
图9A是本发明第五实施方式提供的球栅阵列的封装结构的侧剖结构示意图；FIG. 9A is a schematic side sectional structural view of a package structure of a ball grid array provided in a fifth embodiment of the present invention;
图9B是本发明第五实施方式提供的球栅阵列的封装结构的仰视结构示意图；9B is a schematic bottom view of the packaging structure of the ball grid array provided by the fifth embodiment of the present invention;
图10A是本发明第六实施方式提供的球栅阵列的封装结构的侧剖结构示意图；FIG. 10A is a schematic side sectional structural view of a package structure of a ball grid array provided in a sixth embodiment of the present invention;
图10B是本发明第六实施方式提供的球栅阵列的封装结构的仰视结构示意图；10B is a schematic bottom view of the packaging structure of the ball grid array provided by the sixth embodiment of the present invention;
图11A是本发明第七实施方式提供的球栅阵列的封装结构的侧剖结构示意图；11A is a schematic side sectional structural view of a ball grid array package structure provided by the seventh embodiment of the present invention;
图11B是本发明第七实施方式提供的球栅阵列的封装结构的仰视结构示意图；11B is a schematic bottom view of the package structure of the ball grid array provided by the seventh embodiment of the present invention;
图12A是本发明第八实施方式提供的球栅阵列的封装结构的侧剖结构示意图；12A is a schematic side-sectional structural view of a ball grid array package structure provided by an eighth embodiment of the present invention;
图12B是本发明第八实施方式提供的球栅阵列的封装结构的仰视结构示意图。12B is a schematic bottom view of the package structure of the ball grid array provided by the eighth embodiment of the present invention.
具体实施方式Detailed ways
以下将结合附图所示的实施例对本发明进行详细描述。但这些实施例并不限制本发明，本领域的普通技术人员根据这些实施例所做出的结构或功能上的变换均包含在本发明的保护范围内。The present invention will be described in detail below in conjunction with the embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural or functional changes made by those skilled in the art according to these embodiments are included in the protection scope of the present invention.
参图1所示，本发明第一实施方式提供一种球栅阵列的封装方法，所述封装方法包括：S1、提供一基板，所述基板的一侧表面至少具有用于设置焊球的第一区域及第二区域。As shown in FIG. 1 , the first embodiment of the present invention provides a ball grid array packaging method, the packaging method includes: S1, providing a substrate, one side of the substrate has at least a second surface for arranging solder balls A region and a second region.
本发明具体实施方式中，在植入焊球之前，根据焊球的功能在基板下方划定至少两个焊接区域；所述焊接区域包括：焊球用于电性传输和热传导的第一区域，以及基板下方除去第一区域以外的第二区域。。In a specific embodiment of the present invention, before the solder balls are implanted, at least two soldering areas are defined under the substrate according to the functions of the solder balls; the soldering areas include: a first area where the solder balls are used for electrical transmission and heat conduction, and the second area under the substrate except the first area. .
球栅阵列的封装结构通常包括：基板，设置于所述基板上方的元器件，用于封装所述元器件的塑封料，以及植入所述基板下方的焊球；根据球栅阵列的封装结构的具体应用环境，设置于所述基板上方的元器件主要包括：功能芯片和无源器件，所述功能芯片为有源电子元件，需要能量的来源而实现它特定的功能，一般用来信号的放大、转换等；所述无源器件是在不需要外加电源的条件下，就可以显示其特性的电子元件，主要是电阻类、电感类和电容类器件，它们的共同特点是在电路中无需加电源即可在有信号时工作，例如：电阻，电容，电感，转换器，渐变器，匹配网络，谐振器，滤波器，混频器和开关等。The packaging structure of the ball grid array generally includes: a substrate, components arranged above the substrate, a plastic encapsulant for packaging the components, and solder balls implanted under the substrate; according to the packaging structure of the ball grid array In the specific application environment, the components arranged above the substrate mainly include: functional chips and passive devices. The functional chips are active electronic components that require a source of energy to achieve their specific functions. They are generally used for signal Amplification, conversion, etc.; the passive device is an electronic component that can display its characteristics without an external power supply, mainly resistors, inductors and capacitors. Their common feature is that they do not need to be used in the circuit Add power to work when there are signals, such as: resistors, capacitors, inductors, converters, gradienters, matching networks, resonators, filters, mixers and switches, etc.
相应的，根据基板上方植入的元器件种类不同，对应各个元器件植入于基板下方的焊球的功能也各不相同。具体的，在基板下方对应功能芯片区域植入的焊球，其主要用于电性传输与热传导；在基板下方对应无源器件区域植入的焊球，其主要用于电性传输。Correspondingly, according to the different types of components implanted above the substrate, the functions of the solder balls implanted below the substrate corresponding to each component are also different. Specifically, the solder balls implanted in the area corresponding to the functional chip under the substrate are mainly used for electrical transmission and heat conduction; the solder balls implanted in the area corresponding to the passive device under the substrate are mainly used for electrical transmission.
进一步的，所述方法还包括：S2、根据焊球的功能在基板下方将所述焊接区域划分为两个，其包括：焊球用于电性传输和热传导的第一区域，以及基板下方除去第一区域以外的第二区域。根据该优选实施方式所能实现的具体实施方式中，可根据对应基板上方封装元器件的类型在基板下方划定至少两个焊接区域；即基板下方对应功能芯片的区域为第一区域，基板下方对应无源器件的区域以及其他需要焊接焊球的区域划分为第二区域。Further, the method further includes: S2. Dividing the soldering area under the substrate into two according to the function of the solder balls, which includes: the first area where the solder balls are used for electrical transmission and heat conduction, and removing the solder balls under the substrate. A second area other than the first area. In the specific implementation that can be realized according to this preferred embodiment, at least two soldering areas can be defined under the substrate according to the type of packaged components above the corresponding substrate; that is, the area below the substrate corresponding to the functional chip is the first area, and The area corresponding to the passive device and other areas requiring welding of solder balls are divided into the second area.
本发明提及的焊球具有多个类型，每种类型的焊球具有不同的参数，所述参数主要包括：热传导性能、热膨胀系数及尺寸，在本发明的其他实施方式中，所述参数还可能涉及导电性能。优选的，本发明具体实施方式中，通过改变焊球中高导电导热金属含量、改变焊球中绝缘物质含量提升或降低其热传导性能；进一步的，本发明的根据各自参数的不同将其分为三类，其分别为金属焊球、树脂焊球以及全锡焊球；所述金属焊球包括：第一内核及包覆第一内核的第一外核，所述第一内核为导热性能及熔点均高于锡的金属材质，所述第一外核为锡材质；构成所述第一内核的金属例如：铜；所述树脂焊球包括：第二内核及包覆第二内核的第二外核，所述第二内核为树脂材质，所述第二外核为锡材质；构成所述第二内核的树脂为高分子化合物，例如：酚醛树脂、聚酯树脂等；所述全锡焊球为传统的锡制焊球，其构成材质为锡。对于相同尺寸的金属焊球、树脂焊球和全锡焊球，所述金属焊球的导热性能最好，所述树脂焊球的导热性能最低，所述金属焊球的热膨胀系数最大，所述树脂焊球的热膨胀系数最小，即所述全锡焊球的热膨胀系数高于所述树脂焊球的热膨胀系数，低于所述金属焊球的热膨胀系数，如此，在在热胀冷缩条件下，树脂焊球的产生的剪切应力最小。The solder ball mentioned in the present invention has multiple types, and each type of solder ball has different parameters, and the parameters mainly include: thermal conductivity, thermal expansion coefficient and size. In other embodiments of the present invention, the parameters also include: Conductivity may be involved. Preferably, in the specific embodiment of the present invention, by changing the content of highly conductive and thermally conductive metals in the solder balls, changing the content of insulating substances in the solder balls to improve or reduce their thermal conductivity; further, the present invention is divided into three types according to the different parameters. Classes, which are metal solder balls, resin solder balls and full-tin solder balls; the metal solder balls include: a first inner core and a first outer core covering the first inner core, and the first inner core is thermal conductivity and melting point Metal material higher than tin, the first outer core is made of tin; the metal constituting the first inner core is for example: copper; the resin solder ball includes: a second inner core and a second outer core covering the second inner core core, the second inner core is made of resin, and the second outer core is made of tin; the resin forming the second inner core is a polymer compound, such as phenolic resin, polyester resin, etc.; the all-tin solder ball It is a traditional tin solder ball, and its constituent material is tin. For metal solder balls, resin solder balls and full-tin solder balls of the same size, the thermal conductivity of the metal solder balls is the best, the thermal conductivity of the resin solder balls is the lowest, and the thermal expansion coefficient of the metal solder balls is the largest. The thermal expansion coefficient of the resin solder ball is the smallest, that is, the thermal expansion coefficient of the all-tin solder ball is higher than the thermal expansion coefficient of the resin solder ball, and lower than the thermal expansion coefficient of the metal solder ball, so that under the conditions of thermal expansion and contraction , the shear stress generated by the resin solder ball is minimal.
本发明一优选实施方式中，所述第一区域对应功能芯片，于所述第一区域焊接至少一个第一焊球，于所述第二区域焊接至少一个第二焊球，其中，所述第一焊球与所述第二焊球的至少一参数不同，所述参数包括热传导性能及尺寸；所述第一焊球具有第一热传导性能，所述第二焊球具有第二热传导性能，所述第一热传导性能大于所述第二热传导性能。In a preferred embodiment of the present invention, the first area corresponds to a functional chip, at least one first solder ball is soldered to the first area, and at least one second solder ball is soldered to the second area, wherein the first A solder ball is different from the second solder ball in at least one parameter, the parameter includes thermal conductivity and size; the first solder ball has a first thermal conductivity, and the second solder ball has a second thermal conductivity, so The first heat conduction performance is greater than the second heat conduction performance.
进一步的，本发明一实施方式中，所述第一焊球具有第一尺寸，所述第二焊球具有第二尺寸，所述第一尺寸等于所述第二尺寸。具体的，所述第一焊球为金属焊球，所述第二焊球为树脂焊球或全锡焊球至少其中之一，或所述第一焊球为全锡焊球，所述第二焊球为树脂焊球；当然，在本发明的其他实施方式中，所述第一焊球为金属焊球，所述第二焊球还可为树脂焊球和全锡焊球，所述全锡焊球的热膨胀系数高于所述树脂焊球的膨胀系数，且低于所述金属焊球的膨胀系数，在此不再继续赘述。Further, in one embodiment of the present invention, the first solder ball has a first size, the second solder ball has a second size, and the first size is equal to the second size. Specifically, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball or a full-tin solder ball, or the first solder ball is a full-tin solder ball, and the second solder ball is a full-tin solder ball. The second solder ball is a resin solder ball; of course, in other embodiments of the present invention, the first solder ball is a metal solder ball, and the second solder ball can also be a resin solder ball and a full-tin solder ball. The thermal expansion coefficient of the all-tin solder ball is higher than that of the resin solder ball, and lower than that of the metal solder ball, so details will not be repeated here.
进一步的，本发明优选实施方式中，为避免处于基板下方边角区域的焊球在外力影响下导致其焊接点断裂，本发明第二实施方式提供的球栅阵列的封装方法，在上述第一实施方式提供的球栅阵列的封装方法的基础上，所述基板的一侧表面还具有用于设置焊球的第三区域；于所述第三区域焊接至少一个第三焊球，其中，所述第三焊球与所述第二焊球的至少一参数不同，所述参数包括热传导性能、热膨胀系数及尺寸。Further, in the preferred embodiment of the present invention, in order to avoid the solder balls in the corner area under the substrate from being broken under the influence of external force, the packaging method of the ball grid array provided in the second embodiment of the present invention, in the above-mentioned first On the basis of the ball grid array packaging method provided in the embodiment, one side surface of the substrate further has a third area for disposing solder balls; at least one third solder ball is soldered to the third area, wherein the The third solder ball is different from the second solder ball in at least one parameter, and the parameter includes thermal conductivity, thermal expansion coefficient and size.
本发明可实现实施方式中，所述第三区域独立于第一区域和第二区域存在，或第三区域为第二区域的一部分。In an embodiment of the present invention, the third area exists independently of the first area and the second area, or the third area is a part of the second area.
本发明第二实施方式中，结合图2所示，所述球栅阵列的封装方法具体包括：M1、提供一基板，所述基板的一侧表面至少具有用于设置焊球的第一区域、第二区域及第三区域；M2、于所述第一区域焊接至少一个第一焊球，于所述第二区域焊接至少一个第二焊球，于所述第三区域焊接至少一个第三焊球，其中，所述第一焊球、所述第二焊球、所述第三焊球至少一参数不同，所述参数包括热传导性能、热膨胀系数及尺寸。In the second embodiment of the present invention, as shown in FIG. 2 , the ball grid array packaging method specifically includes: M1, providing a substrate, one side surface of the substrate has at least a first area for setting solder balls, The second area and the third area; M2, welding at least one first solder ball in the first area, welding at least one second solder ball in the second area, and welding at least one third solder ball in the third area Balls, wherein the first solder ball, the second solder ball, and the third solder ball are different in at least one parameter, and the parameters include thermal conductivity, thermal expansion coefficient, and size.
优选的，所述第一区域对应功能芯片，所述第三区域对应基板的至少一个边角；所述第一焊球具有第一热传导性能及第一尺寸，所述第二焊球具有第二热传导性能及第二尺寸，所述第三焊球具有第三热传导性能及第三尺寸，所述第一热传导性能大于所述第二热传导性能，所述第一尺寸等于所述第二尺寸且小于所述第三尺寸。Preferably, the first area corresponds to a functional chip, and the third area corresponds to at least one corner of the substrate; the first solder ball has a first thermal conductivity and a first size, and the second solder ball has a second thermal conductivity and a second size, the third solder ball has a third thermal conductivity and a third size, the first thermal conductivity is greater than the second thermal conductivity, the first size is equal to the second size and smaller than The third dimension.
相应的，所述第三区域的焊球采用大尺寸焊球，加强焊球与基板、焊球与印刷线路板之间的接触面积，加强焊接结合强度，避免外力影响下，例如：跌落、碰撞导致焊接点断裂。Correspondingly, the solder balls in the third area adopt large-size solder balls to strengthen the contact area between the solder balls and the substrate, and between the solder balls and the printed circuit board, strengthen the bonding strength of the solder, and avoid the influence of external forces, such as: falling, collision lead to breakage of solder joints.
具体的，本发明可实现方式中，所述第一焊球为金属焊球，所述第二焊球为树脂焊球或全锡焊球至少其中之一，所述第三焊球为树脂焊球；或所述第一焊球为金属焊球，所述第二焊球为树脂焊球或全锡焊球至少其中之一，所述第三焊球为全锡焊球；或所述第一焊球为全锡焊球，所述第二焊球为树脂焊球，所述第三焊球为树脂焊球或全锡焊球至少其中之一，所述全锡焊球的热膨胀系数高于所述树脂焊球的膨胀系数，且低于所述金属焊球的膨胀系数。Specifically, in an implementable manner of the present invention, the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball or a full-tin solder ball, and the third solder ball is a resin solder ball or the first solder ball is a metal solder ball, the second solder ball is at least one of a resin solder ball or a full-tin solder ball, and the third solder ball is a full-tin solder ball; or the first solder ball One solder ball is a full-tin solder ball, the second solder ball is a resin solder ball, and the third solder ball is at least one of a resin solder ball or a full-tin solder ball, and the thermal expansion coefficient of the full-tin solder ball is high The expansion coefficient of the resin solder ball is lower than the expansion coefficient of the metal solder ball.
结合图3至12B所示，为了便于理解，以通过上述球栅阵列的封装方法封装出的9种球栅阵列的封装结构为例做具体说明，该示例中，并未对所有实现方式进行穷举，但通过上述文字描述和下述具体示例描述的结合，可以推导出其他封装结构，在此不做继续赘述。3 to 12B, in order to facilitate understanding, the packaging structure of nine ball grid arrays packaged by the above ball grid array packaging method is used as an example to make a specific description. In this example, all implementation methods are not exhaustive. However, other packaging structures can be deduced through the combination of the above text description and the following description of specific examples, which will not be repeated here.
结合图3、图4A、4B、5A、5B、图6A、6B、所示，为本发明第一、第二、第三实施方式提供的球栅阵列的封装结构；所述球栅阵列的封装结构包括：基板10，设置于所述基板10上方的元器件30，用于封装所述元器件的塑封料50，以及植入所述基板10下方的焊球70；所述焊球70包括至少一参数不同的第一焊球及第二焊球，所述参数包括热传导性能、热膨胀系数及尺寸；所述基板10下表面至少具有用于植入第一焊球的第一区域91及用于植入第二焊球的第二区域93；所述元器件30包括：功能芯片31和无源器件33；对应所述功能芯片31的基板下方为第一区域91，所述第一焊球具有第一热传导性能及第一尺寸，所述第二焊球具有第二热传导性能及第二尺寸，所述第一热传导性能大于所述第二热传导性能；所述第一尺寸等于所述第二尺寸。3, 4A, 4B, 5A, 5B, 6A, 6B, the packaging structure of the ball grid array provided by the first, second, and third embodiments of the present invention; the packaging of the ball grid array The structure includes: a substrate 10, a component 30 disposed above the substrate 10, a molding compound 50 for encapsulating the component, and a solder ball 70 implanted under the substrate 10; the solder ball 70 includes at least A first solder ball and a second solder ball with different parameters, the parameters include thermal conductivity, thermal expansion coefficient and size; the lower surface of the substrate 10 has at least a first region 91 for implanting the first solder ball and a Implant the second region 93 of the second solder ball; the component device 30 includes: a functional chip 31 and a passive device 33; the substrate corresponding to the functional chip 31 is a first region 91, and the first solder ball has First thermal conductivity and a first size, the second solder ball has a second thermal conductivity and a second size, the first thermal conductivity is greater than the second thermal conductivity; the first size is equal to the second size .
如4A、4B所示，本发明第一实施方式提供的封装结构中，所述第一焊球为金属焊球71，所述第二焊球为树脂焊球73。所述金属焊球71包括：第一内核711及包覆第一内核711的第一外核713，所述第一内核711为导热性能及熔点均高于锡的金属材质，所述第一外核713为锡材质；构成所述第一内核711的金属例如：铜；所述树脂焊球73包括：第二内核731及包覆第二内核731的第二外核733，所述第二内核731为树脂材质，所述第二外核733为锡材质；构成所述第二内核733的树脂为高分子化合物，例如：酚醛树脂、聚酯树脂等；所述金属焊球71的热膨胀系数高于所述树脂焊球73的热膨胀系数。As shown in 4A and 4B, in the package structure provided by the first embodiment of the present invention, the first solder ball is a metal solder ball 71 , and the second solder ball is a resin solder ball 73 . The metal solder ball 71 includes: a first inner core 711 and a first outer core 713 covering the first inner core 711. The first inner core 711 is a metal material with higher thermal conductivity and melting point than tin. The core 713 is tin material; the metal constituting the first inner core 711 is for example: copper; the resin solder ball 73 includes: a second inner core 731 and a second outer core 733 covering the second inner core 731, the second inner core 731 731 is made of resin, and the second outer core 733 is made of tin; the resin constituting the second inner core 733 is a polymer compound, such as phenolic resin, polyester resin, etc.; the thermal expansion coefficient of the metal solder ball 71 is high The thermal expansion coefficient of the resin solder ball 73.
如图5A、5B所示，本发明第一实施方式提供的封装结构中，所述第一焊球为金属焊球71，所述第二焊球为全锡焊球75；所述全锡焊球75为传统的锡制焊球，其构成材质为锡，所述全锡焊球75的热膨胀系数低于所述金属焊球71的热膨胀系数。As shown in Figures 5A and 5B, in the package structure provided by the first embodiment of the present invention, the first solder ball is a metal solder ball 71, and the second solder ball is a full-tin solder ball 75; the full-tin solder ball The ball 75 is a traditional solder ball made of tin, and its constituent material is tin. The thermal expansion coefficient of the full-tin solder ball 75 is lower than that of the metal solder ball 71 .
如图6A、6B所示，本发明第三实施方式提供的封装结构中，所述第一焊球为全锡焊球75，所述第二焊球为树脂焊球73；所述树脂焊球73的热膨胀系数低于所述全锡焊球75的热膨胀系数。As shown in Figures 6A and 6B, in the package structure provided by the third embodiment of the present invention, the first solder ball is a full-tin solder ball 75, and the second solder ball is a resin solder ball 73; the resin solder ball The thermal expansion coefficient of 73 is lower than that of the full-tin solder ball 75 .
本发明第一、第二、第三实施方式提供的球栅阵列的封装结构，在不改变焊球尺寸的情况下，在第一区域植入热传导性能较高的焊球以提升第一区域的热传导能力，在第二区域植入热传导性能热膨胀系数较低的焊球以降低热胀冷缩条件下产生的剪切应力，避免剪切应力造成焊球接点的断裂。The packaging structure of the ball grid array provided by the first, second, and third embodiments of the present invention, without changing the size of the solder balls, implants solder balls with high thermal conductivity in the first region to improve the thermal conductivity of the first region. Thermal conductivity, implanting solder balls with low thermal expansion coefficient in the second area to reduce the shear stress generated under the condition of thermal expansion and contraction, and avoid shear stress caused by the fracture of solder ball joints.
结合图3、图7A、7B、8A 、8B、9A 、9B、10A 、10B、11A 、11B、图12A、12B、所示，为本发明第四、五、六、七、八、九、十、十一、十二实施方式提供的球栅阵列的封装结构；该6种方式提供的封装结构较上述三种封装结构的区别在于，所述基板的下表面还具有用于设置焊球的第三区域95；所述焊球还包括一第三焊球，其中，所述第三焊球与所述第二焊球的至少一参数不同，所述参数包括热传导性能、热膨胀系数及尺寸。该具体实施方式中，所述球栅阵列的封装结构包括：基板10，设置于所述基板10上方的元器件30，用于封装所述元器件的塑封料50，以及植入所述基板10下方的焊球70；所述焊球70包括至少一参数不同的第一焊球、第二焊球及第三焊球，所述参数包括热传导性能、热膨胀系数及尺寸；所述基板10下表面至少具有用于植入第一焊球的第一区域91、用于植入第二焊球的第二区域93、用于植入第三焊球的第三区域95；所述元器件30包括：功能芯片31和无源器件33；对应所述功能芯片31的基板10下方为第一区域91，对应基板10下方的至少一个边角为第三区域95，基板10下方的剩余区域为第二区域93；所述第一焊球具有第一热传导性能及第一尺寸，所述第二焊球具有第二热传导性能及第二尺寸，所述第三焊球具有第三热传导性能及第二尺寸，所述第一热传导性能大于所述第二热传导性能；所述第一尺寸等于所述第二尺寸且小于所述第三尺寸。In conjunction with Fig. 3, Fig. 7A, 7B, 8A, 8B, 9A, 9B, 10A, 10B, 11A, 11B, Fig. 12A, 12B, as shown, it is the fourth, fifth, sixth, seventh, eighth, ninth, tenth of the present invention 11. The packaging structure of the ball grid array provided in the 11th and 12th embodiments; the difference between the packaging structures provided by the six methods compared with the above three packaging structures is that the lower surface of the substrate also has a first solder ball. Three regions 95 ; the solder ball further includes a third solder ball, wherein the third solder ball is different from the second solder ball in at least one parameter, and the parameter includes thermal conductivity, thermal expansion coefficient and size. In this specific embodiment, the packaging structure of the ball grid array includes: a substrate 10, a component 30 disposed above the substrate 10, a plastic encapsulant 50 for packaging the component, and implanting the substrate 10 The solder ball 70 below; the solder ball 70 includes a first solder ball, a second solder ball and a third solder ball with at least one parameter different, the parameters include thermal conductivity, thermal expansion coefficient and size; the lower surface of the substrate 10 There are at least a first region 91 for implanting a first solder ball, a second region 93 for implanting a second solder ball, and a third region 95 for implanting a third solder ball; the component 30 includes : functional chip 31 and passive device 33; the substrate 10 corresponding to the functional chip 31 is the first area 91, at least one corner below the substrate 10 is the third area 95, and the remaining area below the substrate 10 is the second area. Region 93: the first solder ball has a first thermal conductivity and a first size, the second solder ball has a second thermal conductivity and a second size, and the third solder ball has a third thermal conductivity and a second size , the first thermal conductivity is greater than the second thermal conductivity; the first size is equal to the second size and smaller than the third size.
如图7A、7B所示，本发明第四实施方式提供的封装结构中，所述第一焊球为金属焊球71，所述第二焊球、所述第三焊球均为树脂焊球73，所述树脂焊球73的热膨胀系数低于所述金属焊球71的热膨胀系数。As shown in Figures 7A and 7B, in the package structure provided by the fourth embodiment of the present invention, the first solder ball is a metal solder ball 71, and the second solder ball and the third solder ball are both resin solder balls. 73 , the thermal expansion coefficient of the resin solder ball 73 is lower than the thermal expansion coefficient of the metal solder ball 71 .
如图8A、8B所示，本发明第五实施方式提供的封装结构中，所述第一焊球为金属焊球71，所述第二焊球、所述第三焊球均为全锡焊球75，所述全锡焊球75的热膨胀系数低于所述金属焊球71的热膨胀系数。As shown in Figures 8A and 8B, in the package structure provided by the fifth embodiment of the present invention, the first solder ball is a metal solder ball 71, and the second solder ball and the third solder ball are all soldered Ball 75 , the coefficient of thermal expansion of the full-tin solder ball 75 is lower than that of the metal solder ball 71 .
如图9A、9B所示，所示，本发明第六实施方式提供的封装结构中，所述第一焊球为金属焊球71，所述第二焊球为树脂焊球73，所述第三焊球为全锡焊球75，所述全锡75的热膨胀系数高于所述树脂焊球73的热膨胀系数，且低于所述金属焊球71的热膨胀系数。As shown in Figures 9A and 9B, in the packaging structure provided by the sixth embodiment of the present invention, the first solder ball is a metal solder ball 71, the second solder ball is a resin solder ball 73, and the first solder ball is a resin solder ball 73. The three solder balls are all-tin solder balls 75 , and the thermal expansion coefficient of the all-tin solder balls 75 is higher than that of the resin solder balls 73 and lower than that of the metal solder balls 71 .
如图10A、10B所示，本发明第七实施方式提供的封装结构中，所述第一焊球为金属焊球71，所述第二焊球为全锡焊球75，所述第三焊球为树脂焊球73，所述全锡75的热膨胀系数高于所述树脂焊球73的热膨胀系数，且低于所述金属焊球71的热膨胀系数。As shown in Figures 10A and 10B, in the packaging structure provided by the seventh embodiment of the present invention, the first solder ball is a metal solder ball 71, the second solder ball is a full-tin solder ball 75, and the third solder ball The ball is a resin solder ball 73 , and the thermal expansion coefficient of the full tin 75 is higher than that of the resin solder ball 73 and lower than that of the metal solder ball 71 .
该第四、五、六、七实施方式在基板下方划定对应功能芯片的第一区域，对应边角的第三区域，并在第一区域植入金属焊球，以通过增加焊球中的高导电高导热金属含量以提升第一区域的热传导能力；在第二区域植入热膨胀系数低于金属焊球的焊球，以降低在热胀冷缩条件下，焊球与基板之间的剪切应力，避免剪切应力造成焊球接点的断裂；在第三区域植入大尺寸的焊球，加强焊球与基板、焊球与印刷线路板之间的接触面积，加强焊接结合强度，避免外力影响下导致焊接点断裂。In the fourth, fifth, sixth, and seventh embodiments, the first area corresponding to the functional chip is defined under the substrate, and the third area corresponding to the corner is implanted with metal solder balls in the first area, so that by increasing the High electrical conductivity and high thermal conductivity metal content to improve the thermal conductivity of the first area; solder balls with a lower thermal expansion coefficient than metal solder balls are implanted in the second area to reduce the shear between the solder balls and the substrate under the conditions of thermal expansion and contraction Shear stress, to avoid the fracture of the solder ball joint caused by shear stress; implant large-size solder balls in the third area, strengthen the contact area between the solder ball and the substrate, the solder ball and the printed circuit board, strengthen the soldering bonding strength, and avoid Under the influence of external force, the welding point is broken.
如图11A、11B所示，本发明第八实施方式提供的封装结构中，所述第一焊球为全锡焊球75，所述第二焊球和所述第三焊球均为树脂焊球73，所述树脂焊球73的热膨胀系数低于所述全锡焊球75的热膨胀系数。As shown in Figures 11A and 11B, in the package structure provided by the eighth embodiment of the present invention, the first solder ball is an all-tin solder ball 75, and the second solder ball and the third solder ball are both resin solder balls. Ball 73 , the thermal expansion coefficient of the resin solder ball 73 is lower than the thermal expansion coefficient of the full-tin solder ball 75 .
如图12A、12B所示，本发明第九实施方式提供的封装结构中，所述第一焊球为全锡焊球75，所述第二焊球为树脂焊球73，所述第三焊球为全锡焊球75，所述全锡75的热膨胀系数高于所述树脂焊球73的热膨胀系数。As shown in Figures 12A and 12B, in the package structure provided by the ninth embodiment of the present invention, the first solder ball is an all-tin solder ball 75, the second solder ball is a resin solder ball 73, and the third solder ball The balls are all-tin solder balls 75 , and the thermal expansion coefficient of the all-tin solder balls 75 is higher than that of the resin solder balls 73 .
本发明第八、九实施方式提供的球栅阵列的封装结构，在基板下方划定3个焊接区域，依次为：基板下方对应功能芯片的第一区域，对应边角的第三区域，以及基板下方除去第一区域和第三区域外的第二区域，其在第三区域植入大尺寸的焊球，加强焊球与基板、焊球与印刷线路板之间的接触面积，加强焊接结合强度，避免外力影响下导致焊接点断裂；在第二区域植入树脂焊球以减小焊球的金属量，降低焊球的热膨胀系数，如此还可以降低热胀冷缩条件下产生的剪切应力，避免剪切应力造成焊球接点的断裂。The packaging structure of the ball grid array provided by the eighth and ninth embodiments of the present invention defines three welding areas under the substrate, which are: the first area corresponding to the functional chip under the substrate, the third area corresponding to the corner, and the substrate In the second area except the first area and the third area, large-size solder balls are implanted in the third area to strengthen the contact area between the solder balls and the substrate, and between the solder balls and the printed circuit board, and strengthen the soldering bonding strength , to avoid the fracture of the solder joint under the influence of external force; implant resin solder balls in the second area to reduce the metal content of the solder balls, reduce the thermal expansion coefficient of the solder balls, and thus reduce the shear stress generated under the conditions of thermal expansion and contraction , to avoid fracture of the solder ball joints caused by shear stress.
综上所述，本发明的球栅阵列的封装结构及其封装方法，根据焊球的功能或元器件的类型在基板下方划定多个焊接区域，进而可依据各个焊接区域的需求植入不同类型的焊球；以提升球栅阵列的封装结构的整体性能。To sum up, in the packaging structure and packaging method of the ball grid array of the present invention, multiple soldering areas are defined under the substrate according to the function of the solder balls or the type of components, and then different soldering areas can be implanted according to the requirements of each soldering area. type of solder balls; to improve the overall performance of the package structure of the ball grid array.
应当理解，虽然本说明书按照实施方式加以描述，但并非每个实施方式仅包含一个独立的技术方案，说明书的这种叙述方式仅仅是为清楚起见，本领域技术人员应当将说明书作为一个整体，各实施方式中的技术方案也可以经适当组合，形成本领域技术人员可以理解的其他实施方式。It should be understood that although this description is described according to implementation modes, not each implementation mode only contains an independent technical solution, and this description in the description is only for clarity, and those skilled in the art should take the description as a whole, and each The technical solutions in the embodiments can also be properly combined to form other embodiments that can be understood by those skilled in the art.
上文所列出的一系列的详细说明仅仅是针对本发明的可行性实施方式的具体说明，它们并非用以限制本发明的保护范围，凡未脱离本发明技艺精神所作的等效实施方式或变更均应包含在本发明的保护范围之内。The series of detailed descriptions listed above are only specific descriptions for feasible implementations of the present invention, and they are not intended to limit the protection scope of the present invention. Any equivalent implementation or implementation that does not depart from the technical spirit of the present invention All changes should be included within the protection scope of the present invention.
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| CN108899283B (en) | 2021-05-07 |
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