CN108879037A - The Planar integration dual frequency filter of encapsulation - Google Patents
The Planar integration dual frequency filter of encapsulation Download PDFInfo
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- CN108879037A CN108879037A CN201810633755.3A CN201810633755A CN108879037A CN 108879037 A CN108879037 A CN 108879037A CN 201810633755 A CN201810633755 A CN 201810633755A CN 108879037 A CN108879037 A CN 108879037A
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- 230000009977 dual effect Effects 0.000 title claims abstract description 81
- 230000010354 integration Effects 0.000 title claims abstract description 58
- 238000005538 encapsulation Methods 0.000 title claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 102
- 239000002184 metal Substances 0.000 claims abstract description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 61
- 239000011229 interlayer Substances 0.000 claims abstract description 25
- 230000007704 transition Effects 0.000 claims abstract description 10
- 125000006850 spacer group Chemical group 0.000 claims abstract 2
- 230000005540 biological transmission Effects 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 10
- 238000012360 testing method Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000013332 literature search Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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Abstract
The present invention relates to the Planar integration dual frequency filter of encapsulation, which includes the three layers of dielectric-slab to bond together.Underlying dielectric plate upper surface is printed with metal layer, rectangular aperture is provided on metal layer, metal layer both ends are separately connected transition transition line and feeding microstrip line, and lower surface is printed with ground metal layer, the two sides and centre of underlying dielectric plate are equipped with periodical metallic vias respectively, realize SIW filter；Top layer dielectric-slab upper surface is printed with metal layer, and lower surface is printed with metal circular patch, and periodical metallic vias is squeezed on dielectric-slab, forms Artificial magnetic conductor structure；Interlayer plate top spacer layer dielectric-slab and underlying dielectric plate.The present invention realizes the dual frequency filter encapsulated with AMC, solves the problems, such as that there are radiation losses and plane wave in conventional filter, while having many advantages, such as that size is small and stable structure.
Description
Technical field
The present invention relates to electronic technology fields, and in particular to the Planar integration dual frequency filter of encapsulation.
Background technique
Microwave comb filter is vital component part in modern wireless communication systems, with the integrated electricity of microwave
The rapid development on road and the growing tension of frequency spectrum resource, whole system develop towards miniaturization, high-performance direction, this is to channel radio
More stringent requirements are proposed for the performance and size of filter in letter system.But the filter of early stage using simple in parallel or
Cascade system, greatly increases the size of filter in this way, and simultaneous transmission loss is larger.
Substrate integration wave-guide (Substrate Integrated Waveguide, SIW) is by medium substrate, upper and lower metal
The class waveguiding structure that face, plated-through hole form, while also having small in size, low cost, excellent spy easy to process and integrated concurrently
Property, this makes it be used widely in the design of filter.In the design of substrate integration wave-guide (SIW) filter, at it
Upper and lower metal covering cracks gap to form the important method that stopband is the design of its filter.The gap in this way, upper and lower metal covering cracks
Substrate integration wave-guide (SIW) filter be difficult to form a closed waveguiding structure, cannot effectively inhibit space radiation
And plane wave.SIW transmits TE10Wave needs mode to convert when integrating with microstrip line, generates mode transition loss；Using SIW
Planar waveguide technology needs to encapsulate when making filter, to inhibit space to radiate and surface wave.
The Planar integration dual frequency filter that the present invention encapsulates can not only inhibit space radiation and plane wave, form envelope
The Planar integration dual frequency filter of dress, and help to realize the high performance-price ratio of high-performance and small size circuit design.Meanwhile
The thickness of adjustment dielectric-slab can form second filter pass band.
The content of present invention has no open report same as the present invention by literature search.
Summary of the invention
It is an object of the invention to overcome the deficiency of the prior art, designs the Planar integration dual frequency filter of encapsulation.
The Planar integration dual frequency filter that the present invention encapsulates includes：Top layer dielectric-slab (1), interlayer plate (2), bottom
Layer dielectric-slab (3), wherein：
A, the upper surface of top layer dielectric-slab (1) is printed with metal layer (19), and lower surface is printed with two column periodicity metal circulars patch
Piece (5)；Period 1 property metallic vias (4) are equipped with Y-axis parallel direction on top layer dielectric-slab (1)；Period 1 property metal
Via hole (4) has three column：The two of two sides arrange the surface that periodical metallic vias is located at periodical metal circular patch (5), intermediate
One arrange the middle that periodical metallic vias is located at top layer dielectric-slab；
B, interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
C, the upper surface of underlying dielectric plate (3) is located at XOY plane, and center is coordinate origin；Underlying dielectric plate (3)
It is printed with upper surface metal layer (17) and lower surface metal layer (18)；The both ends of upper surface metal layer (17) respectively with the mistake of printing
Cross transition line metal layer (13,15) and feeding microstrip line metal layer (14,16) connection；The two sides of underlying dielectric plate (3) are equipped with
Two cycles metallic vias (6), middle position are equipped with third periodic metallic vias (7), third periodic metallic vias (7)
Central axis is overlapped with Y-axis；Three groups of rectangular apertures are provided on the metal layer of underlying dielectric plate (3) upper surface：First group of rectangular aperture
(8), second group of rectangular aperture (9) and third group rectangular aperture (10)；Every group of rectangular aperture (8,9,10) be respectively two about
Y-axis is symmetrical, and is parallel to the rectangular aperture of X-axis；First group of rectangular aperture (8) is continuous gap, but second group and third group square
The not continuous gap in each gap in shape gap (9,10), separate two of printed metal layer gap (11,12)
The identical small gap of size；
D, top layer dielectric-slab (1) dielectric constant of the Planar integration dual frequency filter of the encapsulation is higher than interlayer plate
(2) and underlying dielectric plate (3)；Interlayer plate (2) is identical with the dielectric constant of underlying dielectric plate (3), and three layers of dielectric-slab can
It is fixed together by bonding or screw；The top layer dielectric-slab (1) is identical as interlayer plate (2) length and width；
E, the width of the underlying dielectric plate (3) of the Planar integration dual frequency filter of the encapsulation and upper two layers medium board width
It is identical, but length is slightly longer, so that transition line (13,15) and feeding microstrip line (14,16) is in naked state, in order to test；
The metal layer that the Planar integration dual frequency filter encapsulated as described above (3) at underlying dielectric plate and is printed thereon,
Gap (8,9,10) on metal layer, metallic vias (6,7), gradual change microstrip line (13,15) and feeding microstrip line (14,16) structure
At dual frequency filter；Top layer dielectric-slab (1) and periodical metallic vias (4) thereon and metal patch (5) constitute artificial magnetic
Conductor forms the encapsulation to filter；Effectively reduce space radiation loss, it is suppressed that plane wave, while it is humorous to solve space
The problem of vibration；
The thickness of the Planar integration dual frequency filter encapsulated as described above, top layer dielectric-slab (1) compares interlayer
The thickness of plate (2) wants thick, so that electro-magnetic bandgap can cover first passband of dual frequency filter, improves the band of filter
Outer decaying steepness；
The Planar integration dual frequency filter encapsulated as described above, the thickness of change top layer dielectric-slab (1) can change double
The bandwidth of operation of first passband of band filter；The thickness for increasing top layer dielectric-slab (1), can reduce by first passband
Bandwidth of operation reduces the thickness of top layer dielectric-slab (1), can increase the bandwidth of operation of first passband；
The Planar integration dual frequency filter encapsulated as described above increases to the thickness of top layer dielectric-slab (1) properly
Thickness, second passband of the dual frequency filter can be formed；
The Planar integration dual frequency filter encapsulated as described above, interlayer plate (2) ensure upper layer and lower layer medium
Plate has a stable clearance height between (1,3)；
The lower surface two sides of the Planar integration dual frequency filter encapsulated as described above, top dielectric plate (1) are printed with
Two arrange periodical metal circular patch (5), and middle position is not printed with periodical metal circular patch, eliminates double frequency-band
The resonance problems with outer stopband of first passband of filter；
The Planar integration dual frequency filter encapsulated as described above, the period 3 in underlying dielectric plate (3) middle position
Property metallic vias (7) is consistent the grounded inductors at different levels in the dual frequency filter circuit；Change third periodic metal
The diameter of via hole (7) can change grounded inductors at different levels, realize the adjusting to dual frequency filter centre frequency, and bandwidth is not
Become；
The Planar integration dual frequency filter encapsulated as described above, the length of the rectangular aperture (8) in underlying dielectric plate (3)
The bandwidth of operation and the transmission zero location on the right side of the first passband that degree changes the first passband of adjustable dual frequency filter；Increase
Add the length of rectangular aperture (8), the bandwidth of operation of the first passband of the dual frequency filter can be made to reduce, and make the double frequency-band
Transmission zero location on the right side of first passband of filter moves to left；
The Planar integration dual frequency filter encapsulated as described above adjusts metal layer gap in underlying dielectric plate (3)
(11,12) can eliminate the resonance with outer stopband of the first passband of dual frequency filter to suitable length；
The Planar integration dual frequency filter encapsulated as described above, interlayer plate (2) and underlying dielectric plate (3)
Loss angle tangent is more demanding, the dielectric-slab that loss angle tangent need to be selected as far as possible small, but just to the loss angle of top layer dielectric-slab (1)
It cuts of less demanding, the dielectric-slab of cheap lossy may be selected, to reduce cost.
Compared with prior art, the present invention having the following advantages that：
1, radiation loss and plane wave in traditional gap substrate integral wave guide filter are solved the problems, such as；
2, there is small size, low section is easy of integration, easy processing；
3, stable structure, transmission performance are good；
4, the mode for adjusting filter working frequency is simple.
Detailed description of the invention
Fig. 1 is the overall structure figure for the Planar integration dual frequency filter that the present invention encapsulates.
Fig. 2 is the upper surface figure of the top layer dielectric-slab for the Planar integration dual frequency filter that the present invention encapsulates.
Fig. 3 is the lower surface figure of the top layer dielectric-slab for the Planar integration dual frequency filter that the present invention encapsulates.
Fig. 4 is the upper surface figure of the underlying dielectric plate for the Planar integration dual frequency filter that the present invention encapsulates.
Fig. 5 is the lower surface figure of the underlying dielectric plate for the Planar integration dual frequency filter that the present invention encapsulates.
Fig. 6 is the emulation and test of S11 and S21 of the Planar integration dual frequency filter of the invention encapsulated in 8-27GHz
Figure.
Specific embodiment
Technical solution of the present invention is described in further detail With reference to embodiment.
As shown in figures 1 to 6, the Planar integration dual frequency filter that the present invention encapsulates, including：Top layer dielectric-slab (1), it is intermediate
Layer dielectric-slab (2), underlying dielectric plate (3), wherein：
A, the upper surface of top layer dielectric-slab (1) is printed with metal layer (19), and lower surface is printed with two column periodicity metal circulars patch
Piece (5)；Period 1 property metallic vias (4) are equipped with Y-axis parallel direction on top layer dielectric-slab (1)；Period 1 property metal
Via hole (4) has three column：The two of two sides arrange the surface that periodical metallic vias is located at periodical metal circular patch (5), intermediate
One arrange the middle that periodical metallic vias is located at top layer dielectric-slab；
B, interlayer plate (2) is located at the middle position of top layer dielectric-slab (1) and underlying dielectric plate (3)；
C, the upper surface of underlying dielectric plate (3) is located at XOY plane, and center is coordinate origin；Underlying dielectric plate (3)
It is printed with upper surface metal layer (17) and lower surface metal layer (18)；The both ends of upper surface metal layer (17) respectively with the mistake of printing
Cross transition line metal layer (13,15) and feeding microstrip line metal layer (14,16) connection；The two sides of underlying dielectric plate (3) are equipped with
Two cycles metallic vias (6), middle position are equipped with third periodic metallic vias (7), third periodic metallic vias (7)
Central axis is overlapped with Y-axis；Three groups of rectangular apertures are provided on the metal layer of underlying dielectric plate (3) upper surface：First group of rectangular aperture
(8), second group of rectangular aperture (9) and third group rectangular aperture (10)；Every group of rectangular aperture (8,9,10) be respectively two about
Y-axis is symmetrical, and is parallel to the rectangular aperture of X-axis；First group of rectangular aperture (8) is continuous gap, but second group and third group square
The not continuous gap in each gap in shape gap (9,10), separate two of printed metal layer gap (11,12)
The identical small gap of size；
D, top layer dielectric-slab (1) dielectric constant of the Planar integration dual frequency filter of the encapsulation is higher than interlayer plate
(2) and underlying dielectric plate (3)；Interlayer plate (2) is identical with the dielectric constant of underlying dielectric plate (3), and three layers of dielectric-slab can
It is fixed together by bonding or screw；The top layer dielectric-slab (1) is identical as interlayer plate (2) length and width；
E, the width of the underlying dielectric plate (3) of the Planar integration dual frequency filter of the encapsulation and upper two layers medium board width
It is identical, but length is slightly longer, so that transition line (13,15) and feeding microstrip line (14,16) is in naked state, in order to test；
The metal layer that the Planar integration dual frequency filter encapsulated as described above (3) at underlying dielectric plate and is printed thereon,
Gap (8,9,10) on metal layer, metallic vias (6,7), gradual change microstrip line (13,15) and feeding microstrip line (14,16) structure
At dual frequency filter；Top layer dielectric-slab (1) and periodical metallic vias (4) thereon and metal patch (5) constitute artificial magnetic
Conductor forms the encapsulation to filter；Effectively reduce space radiation loss, it is suppressed that plane wave, while it is humorous to solve space
The problem of vibration；
The thickness of the Planar integration dual frequency filter encapsulated as described above, top layer dielectric-slab (1) compares interlayer
The thickness of plate (2) wants thick, so that electro-magnetic bandgap can cover first passband of dual frequency filter, improves the band of filter
Outer decaying steepness；
The Planar integration dual frequency filter encapsulated as described above, the thickness of change top layer dielectric-slab (1) can change double
The bandwidth of operation of first passband of band filter；The thickness for increasing top layer dielectric-slab (1), can reduce by first passband
Bandwidth of operation reduces the thickness of top layer dielectric-slab (1), can increase the bandwidth of operation of first passband；
The Planar integration dual frequency filter encapsulated as described above increases to the thickness of top layer dielectric-slab (1) properly
Thickness, second passband of the dual frequency filter can be formed；
The Planar integration dual frequency filter encapsulated as described above, interlayer plate (2) ensure upper layer and lower layer medium
Plate has a stable clearance height between (1,3)；
The lower surface two sides of the Planar integration dual frequency filter encapsulated as described above, top dielectric plate (1) are printed with
Two arrange periodical metal circular patch (5), and middle position is not printed with periodical metal circular patch, eliminates double frequency-band
The resonance problems with outer stopband of first passband of filter；
The Planar integration dual frequency filter encapsulated as described above, the period 3 in underlying dielectric plate (3) middle position
Property metallic vias (7) is consistent the grounded inductors at different levels in the dual frequency filter circuit；Change third periodic metal
The diameter of via hole (7) can change grounded inductors at different levels, realize the adjusting to dual frequency filter centre frequency, and bandwidth is not
Become；
The Planar integration dual frequency filter encapsulated as described above, the length of the rectangular aperture (8) in underlying dielectric plate (3)
The bandwidth of operation and the transmission zero location on the right side of the first passband that degree changes the first passband of adjustable dual frequency filter；Increase
Add the length of rectangular aperture (8), the bandwidth of operation of the first passband of the dual frequency filter can be made to reduce, and make the double frequency-band
Transmission zero location on the right side of first passband of filter moves to left；
The Planar integration dual frequency filter encapsulated as described above adjusts metal layer gap in underlying dielectric plate (3)
(11,12) can eliminate the resonance with outer stopband of the first passband of dual frequency filter to suitable length；
The Planar integration dual frequency filter encapsulated as described above, interlayer plate (2) and underlying dielectric plate (3)
Loss angle tangent is more demanding, the dielectric-slab that loss angle tangent need to be selected as far as possible small, but just to the loss angle of top layer dielectric-slab (1)
It cuts of less demanding, the dielectric-slab of cheap lossy may be selected, to reduce cost.
When actual fabrication, top layer dielectric-slab (1) is using the conventional biggish cheap FR4_epoxy medium material of dielectric constant
Expect the dielectric-slab of production, and interlayer plate and underlying dielectric plate will select dielectric constant and lesser medium is lost
Plate, apparent size are the double frequency filter of 12.6mm*37.6mm*2.107mm.The centre frequency of first passband be 15.5GHz and
Bandwidth of operation is 1.9GHz, and the centre frequency of the second passband is 24.88GHz and bandwidth of operation is 0.5GHz；Encapsulation of the invention
Planar integration dual frequency filter the first passband test S11 be less than -10dB, majority be less than -15dB impedance operators,
S21 is less than the transmission characteristic of -3.6dB；The S11 of second passband test is less than -10dB, and majority is less than the impedance operator of -15dB,
S21 is less than the transmission characteristic of -6dB, is a kind of Planar integration double frequency-band for the encapsulation that size is small, structure is simple, transmission performance is good
Filter.
Better embodiment of the invention is explained in detail above, but the present invention is not limited to above-mentioned embodiment party
Formula within the knowledge of one of ordinary skill in the art can also be without departing from the purpose of the present invention
It makes a variety of changes.
Claims (10)
1. the Planar integration dual frequency filter that the present invention encapsulates, which is characterized in that including：Top layer dielectric-slab（1）, middle layer Jie
Scutum（2）, underlying dielectric plate（3）, wherein：
A, top layer dielectric-slab（1）Upper surface be printed with metal layer（19）, lower surface is printed with two column periodicity metal circulars patch
Piece（5）；In top layer dielectric-slab（1）Upper and Y-axis parallel direction is equipped with period 1 property metallic vias（4）；Period 1 property metal
Via hole（4）There are three column：The two of two sides arrange periodical metallic vias and are located at periodical metal circular patch（5）Surface, it is intermediate
One arrange the middle that periodical metallic vias is located at top layer dielectric-slab；
B, interlayer plate（2）Positioned at top layer dielectric-slab（1）With underlying dielectric plate（3）Middle position；
C, underlying dielectric plate（3）Upper surface be located at XOY plane, center is coordinate origin；Underlying dielectric plate（3）Print
Brushed with upper surface metal layer（17）And lower surface metal layer（18）；Upper surface metal layer（17）Both ends respectively with the transition of printing
Transition line metal layer（13,15）With feeding microstrip line metal layer（14,16）Connection；Underlying dielectric plate（3）Two sides be equipped with second
Periodical metallic vias（6）, middle position is equipped with third periodic metallic vias（7）, third periodic metallic vias（7）In
Mandrel is overlapped with Y-axis；Underlying dielectric plate（3）Three groups of rectangular apertures are provided on the metal layer of upper surface：First group of rectangular aperture
（8）, second group of rectangular aperture（9）With third group rectangular aperture（10)；Every group of rectangular aperture（8, 9, 10）Respectively two passes
It is symmetrical in y-axis, and it is parallel to the rectangular aperture of X-axis；First group of rectangular aperture（8）It is continuous gap, but second group and third group
Rectangular aperture（9,10）The not continuous gap in each gap, printed metal layer gap（11,12）Two separated
The identical small gap of a size；
D, the top layer dielectric-slab of the Planar integration dual frequency filter of the encapsulation（1）Dielectric constant is higher than interlayer plate
（2）With underlying dielectric plate（3）；Interlayer plate（2）With underlying dielectric plate（3）Dielectric constant it is identical, three layers of dielectric-slab can
It is fixed together by bonding or screw；The top layer dielectric-slab（1）With interlayer plate（2）Length and width is identical；
E, the underlying dielectric plate of the Planar integration dual frequency filter of the encapsulation（3）Width and upper two layers medium board width
It is identical, but length is slightly longer, makes transition line（13,15）And feeding microstrip line（14,16）In naked state, in order to test；
F, the Planar integration dual frequency filter encapsulated as described above, underlying dielectric plate（3）And the metal layer printed thereon, gold
Belong to the gap on layer（8,9,10）, metallic vias（6, 7）, gradual change microstrip line（13,15）And feeding microstrip line（14,16）It constitutes
Dual frequency filter；Top layer dielectric-slab（1）And periodical metallic vias thereon（4）And metal patch（5）Constitute artificial magnetic conductance
Body forms the encapsulation to filter；Interlayer plate is used for top spacer layer dielectric-slab and underlying dielectric plate.
2. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Top layer dielectric-slab（1）
Thickness than interlayer plate（2）Thickness want thick so that electro-magnetic bandgap can cover dual frequency filter first is logical
Band improves the attenuation outside a channel steepness of filter.
3. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Change top layer dielectric-slab
（1）Thickness can change dual frequency filter first passband bandwidth of operation；Increase top layer dielectric-slab（1）Thickness, can
To reduce the bandwidth of operation of first passband, reduce top layer dielectric-slab（1）Thickness, the work belt of first passband can be increased
It is wide.
4. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：By top layer dielectric-slab
（1）Thickness increase to suitable thickness, second passband of the dual frequency filter can be formed.
5. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Interlayer plate
（2）Ensure upper layer and lower layer dielectric-slab（1,3）Between have a stable clearance height.
6. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Top dielectric plate（1）
Lower surface two sides be printed with two column periodicity metal circular patches（5）, and middle position is not printed with periodical round metal
Shape patch eliminates the resonance problems with outer stopband of the first passband of dual frequency filter.
7. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Underlying dielectric plate（3）
The third periodic metallic vias in middle position（7）It is consistent the grounded inductors at different levels in the dual frequency filter circuit；
Change third periodic metallic vias（7）Diameter can change grounded inductors at different levels, realize to dual frequency filter center frequency
The adjusting of rate, and bandwidth is constant.
8. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Underlying dielectric plate（3）
In rectangular aperture（8）Length change adjustable dual frequency filter the first passband bandwidth of operation and the first passband it is right
The transmission zero location of side；Increase rectangular aperture（8）Length, the work belt of the first passband of the dual frequency filter can be made
Width reduces, and moves to left the transmission zero location on the right side of the first passband of the dual frequency filter.
9. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Adjust underlying dielectric plate
（3）Middle metal layer gap（11,12）To suitable length can eliminate the first passband of dual frequency filter with outer stopband
Resonance.
10. the Planar integration dual frequency filter of encapsulation according to claim 1, it is characterised in that：Interlayer plate
（2）With underlying dielectric plate（3）Loss angle tangent it is more demanding, the dielectric-slab that loss angle tangent need to be selected as far as possible small, but to top
Layer dielectric-slab（1）Loss angle tangent it is of less demanding, the dielectric-slab of cheap lossy may be selected, to reduce cost.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810633755.3A CN108879037A (en) | 2018-06-20 | 2018-06-20 | The Planar integration dual frequency filter of encapsulation |
| CN201910062618.3A CN109599646B (en) | 2018-06-20 | 2019-01-23 | Packaged planar integrated dual band filter |
| CN201920112164.1U CN209929453U (en) | 2018-06-20 | 2019-01-23 | A Novel Planar Integrated Dual Band Filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810633755.3A CN108879037A (en) | 2018-06-20 | 2018-06-20 | The Planar integration dual frequency filter of encapsulation |
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| Publication Number | Publication Date |
|---|---|
| CN108879037A true CN108879037A (en) | 2018-11-23 |
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| CN201810633755.3A Pending CN108879037A (en) | 2018-06-20 | 2018-06-20 | The Planar integration dual frequency filter of encapsulation |
| CN201910062618.3A Active CN109599646B (en) | 2018-06-20 | 2019-01-23 | Packaged planar integrated dual band filter |
| CN201920112164.1U Expired - Fee Related CN209929453U (en) | 2018-06-20 | 2019-01-23 | A Novel Planar Integrated Dual Band Filter |
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| CN201910062618.3A Active CN109599646B (en) | 2018-06-20 | 2019-01-23 | Packaged planar integrated dual band filter |
| CN201920112164.1U Expired - Fee Related CN209929453U (en) | 2018-06-20 | 2019-01-23 | A Novel Planar Integrated Dual Band Filter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109950688A (en) * | 2019-04-12 | 2019-06-28 | 云南大学 | Microstrip type ISGW circular polarisation gap travelling-wave aerial |
| CN109994806A (en) * | 2019-04-22 | 2019-07-09 | 云南大学 | ISGW wideband bandpass filter with dual transfer zero and Wide stop bands |
| CN114914652A (en) * | 2022-05-30 | 2022-08-16 | 西安工业大学 | SSPPs transmission line and filter for central metal strip sputtering ITO film equalization filtering |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114725642B (en) * | 2022-03-16 | 2023-09-19 | 天津大学 | Packaging structure for dielectric integrated suspension wire and metal-dielectric integrated suspension wire active device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615711A (en) * | 2009-06-10 | 2009-12-30 | 东南大学 | Folding self-die substrate integrated waveguide |
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2018
- 2018-06-20 CN CN201810633755.3A patent/CN108879037A/en active Pending
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2019
- 2019-01-23 CN CN201910062618.3A patent/CN109599646B/en active Active
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950688A (en) * | 2019-04-12 | 2019-06-28 | 云南大学 | Microstrip type ISGW circular polarisation gap travelling-wave aerial |
| CN109950688B (en) * | 2019-04-12 | 2023-10-27 | 云南大学 | Microstrip ISGW circular polarization gap traveling wave antenna |
| CN109994806A (en) * | 2019-04-22 | 2019-07-09 | 云南大学 | ISGW wideband bandpass filter with dual transfer zero and Wide stop bands |
| CN109994806B (en) * | 2019-04-22 | 2023-12-15 | 云南大学 | ISGW broadband band-pass filter with double transmission zero points and wide stop band |
| CN114914652A (en) * | 2022-05-30 | 2022-08-16 | 西安工业大学 | SSPPs transmission line and filter for central metal strip sputtering ITO film equalization filtering |
| CN114914652B (en) * | 2022-05-30 | 2024-03-29 | 西安工业大学 | Balanced filtering SSPPs transmission line and filter with sputtered ITO (indium tin oxide) film on central metal strip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN209929453U (en) | 2020-01-10 |
| CN109599646B (en) | 2024-04-16 |
| CN109599646A (en) | 2019-04-09 |
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