CN108832011B - Quantum dot light-emitting diode device, preparation method thereof and display panel - Google Patents

Abstract

The invention provides a quantum dot light-emitting diode device, a preparation method thereof, and a display panel. The preparation method of the quantum dot light-emitting diode device comprises: sequentially stacking an anode layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron layer on a substrate A transmission layer and a cathode layer; a plurality of spaced color film regions are prepared on the first cover plate and the second cover plate respectively, and the two adjacent color film regions have different hydrophilicity and hydrophobicity, and red pixel layers are formed in the color film regions respectively. and the green pixel layer, the first color film layer and the second color film layer are formed on the first cover plate and the second cover plate respectively; the first color film layer formed on the first cover plate and the substrate pair are pressed together , the second color film layer formed on the second cover plate and the cathode layer are pressed together to form the quantum dot light-emitting diode device, so as to realize the preparation of double-sided full-color quantum dot light-emitting diodes in a solution state process device, simplify the preparation process and reduce the preparation cost.

Description

Quantum dot light-emitting diode device and preparation method thereof, and display panel

technical field

Embodiments of the present invention relate to the field of display technology, and in particular, to a quantum dot light-emitting diode device, a method for manufacturing the same, and a display panel.

Background technique

Quantum dots (QDs) are extremely tiny semiconductor nanocrystals that cannot be seen by the naked eye, and are particles with a particle size of less than 10 nanometers. Quantum dots have quantum confinement effect and can emit fluorescence when excited. Moreover, quantum dots have unique luminescence characteristics, such as wide excitation peak, narrow emission peak, tunable luminescence spectrum, large Stokes shift, long fluorescence lifetime, etc., which make them have broad application prospects in the field of photoluminescence. . A quantum dot light emitting diode (QLED) is an electroluminescent device using quantum dots as a light-emitting layer, and a quantum dot light-emitting layer is introduced between different conductive materials to obtain light of a desired wavelength. After more than 20 years of development, quantum dot light-emitting diodes have the advantages of high brightness, fast response speed, extremely narrow half-peak width of luminescence spectrum, large color gamut area, high electroluminescence efficiency, and solution process to reduce losses. It has become the next generation of display technology with great potential.

However, in the existing QLED device manufacturing process, the colored quantum dots must be isolated in the pixel grooves and then filled. The manufacturing process is complicated, the cost is high, and the efficiency is low. The preparation of vacuum processes such as electroplating has high requirements on the environment, and the preparation equipment is expensive, which increases the overall cost of the QLED display device, and the use of vapor deposition electrodes makes the QLED device only transmits light on one side or has poor light transmittance, etc. , and single-sided display or single-color QLED devices, all limit the multi-functional development of QLED displays.

SUMMARY OF THE INVENTION

The invention provides a quantum dot light emitting diode device, a preparation method thereof, and a display panel. The quantum dot light emitting diode device is prepared by a full solution state process, so as to realize the preparation of a double-sided full-color quantum dot light emitting diode device by a solution state process, and the preparation process is simplified. , reduce the production cost.

In a first aspect, an embodiment of the present invention provides a quantum dot light emitting diode device, the quantum dot light emitting diode device comprising: a substrate on which an anode layer, a hole injection layer, a hole transport layer, and a light emitting layer are sequentially stacked , an electron transport layer, a cathode layer, a first color film layer formed on the first cover plate laminated with the substrate pair, and a layer formed on the second cover plate laminated with the cathode layer pair. the second color film layer;

Wherein, the first cover plate and the second cover plate include a plurality of color film regions arranged at intervals, and the hydrophilicity and hydrophobicity of two adjacent color film regions are different, and the first color film layer and the The second color film layer is a combination of a red pixel layer and a green pixel layer prepared on the color film region, and the preparation material of the light-emitting layer is a blue-light quantum dot light-emitting material.

In a second aspect, an embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode device, the method comprising the following steps:

stacking an anode layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer in sequence on the substrate;

A plurality of spaced color film regions are prepared on the first cover plate and the second cover plate respectively, and the two adjacent color film regions have different hydrophilicity and hydrophobicity, and red pixel layers and green color film regions are respectively formed in the color film regions a pixel layer, wherein a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate;

Pressing the first color film layer formed on the first cover plate and the substrate pair, and pressing the second color film layer and the cathode layer formed on the second cover plate The pairs are pressed together to form the quantum dot light emitting diode device.

In a third aspect, the embodiments of the present invention further provide another quantum dot light emitting diode device, the QLDE device includes: a blue quantum dot light emitting diode, which is formed in a first a first color film layer on the cover plate, and a second color film layer formed on the second cover plate in combination with the cathode layer pair of the blue quantum dot light-emitting diode;

Wherein, the first cover plate and the second cover plate include a plurality of color film regions arranged at intervals, and the hydrophilicity and hydrophobicity of two adjacent color film regions are different, and the first color film layer and the The second color film layer is a combination of a red pixel layer and a green pixel layer prepared on the color film region, and the preparation material of the light-emitting layer is a blue-light quantum dot light-emitting material.

In a fourth aspect, an embodiment of the present invention also provides another method for preparing a quantum dot light-emitting diode device, the method comprising the following steps:

A plurality of spaced color film regions are prepared on the first cover plate and the second cover plate respectively, and the two adjacent color film regions have different hydrophilicity and hydrophobicity, and red pixel layers and green color film regions are respectively formed in the color film regions a pixel layer, wherein a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate;

The first color film layer formed on the first cover plate and the substrate pair of the blue quantum dot light-emitting diode are pressed together, and the second color film layer formed on the second cover plate is combined with The cathode layer pairs of the blue light quantum dot light emitting diode are pressed together to form the quantum dot light emitting diode device.

In a fifth aspect, an embodiment of the present invention further provides a quantum dot light emitting diode display panel, the quantum dot light emitting diode display panel including the above quantum dot light emitting diode devices arranged in an array.

Embodiments of the present invention provide a quantum dot light emitting diode device and a method for preparing the same, and a quantum dot light emitting diode display panel. and cathode layer; a plurality of spaced color film regions are respectively prepared on the first cover plate and the second cover plate, and the hydrophilicity and hydrophobicity of two adjacent color film regions are different, and red color is formed in the color film regions respectively. The pixel layer and the green pixel layer, respectively form a first color film layer and a second color film layer on the first cover plate and the second cover plate; A color film layer and the substrate pair are pressed together, and the second color film layer formed on the second cover plate is pressed together with the cathode layer pair to form the quantum dot light-emitting diode device. , so that a double-sided full-color quantum dot light-emitting diode device is prepared by a solution state process, which simplifies the preparation process and reduces the preparation cost.

Description of drawings

1 is a schematic structural diagram of a quantum dot light-emitting diode device according to Embodiment 1 of the present invention;

2 is a schematic structural diagram of a first color film layer provided in Embodiment 1 of the present invention;

3 is a flowchart of a method for preparing a quantum dot light-emitting diode device according to Embodiment 2 of the present invention;

4 is a flowchart of a method for preparing a quantum dot light-emitting diode device according to Embodiment 3 of the present invention;

5 is a flowchart of a method for preparing a quantum dot light-emitting diode device according to Embodiment 4 of the present invention;

6 is a schematic structural diagram of another quantum dot light-emitting diode device provided in Embodiment 5 of the present invention;

FIG. 7 is a flowchart of another method for fabricating a quantum dot light-emitting diode device according to Embodiment 6 of the present invention.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative work fall within the scope of the patent protection of the present invention.

Example 1

It should be noted that the solution-state process described in the embodiments of the present invention refers to the general term for various solutions used in preparing each film layer in the flexible device. For example, the solution-state process may include spin coating, blade coating method, electrospray coating method, slot coating method, strip coating method, dip coating method, roller coating method, inkjet printing method, nozzle printing method, relief printing method, etc. Specifically, these solution state processes belong to the prior art, and those skilled in the art can specifically select various parameters in the preparation process according to the actual situation.

FIG. 1 is a schematic structural diagram of a quantum dot light-emitting diode device provided in Embodiment 1 of the present invention. As shown in FIG. 1 , the quantum dot light-emitting diode device includes: a substrate 1, on which are sequentially stacked anode layers 2, empty layers The hole injection layer 3, the hole transport layer 4, the light emitting layer 5, the electron transport layer 6, the cathode layer 7, and the first color film layer 81 formed on the first cover plate 91 pressed together with the substrate 1 pair, and a second color film layer 82 formed on the second cover plate 92 and pressed together with the cathode layer 7 .

The first cover plate 91 and the second cover plate 92 include a plurality of color film regions arranged at intervals, and the hydrophilicity and hydrophobicity of the adjacent two color film regions are different. The first color film layer 81 and the second color film layer 82 is the combination of the red pixel layer and the green pixel layer prepared on the color film area, and the preparation material of the light-emitting layer 5 is a blue quantum dot light-emitting material.

2 is a schematic structural diagram of the first color film layer provided in the first embodiment of the present invention. As shown in FIGS. 1 and 2 , the red pixel layer 811 and the green pixel layer 812 on the first cover plate 91 constitute the first color film Layer 81, the area on the first cover plate where the red pixel layer 811 and the green pixel layer 812 are located is the color film area, and each color film area is spaced apart, leaving a blank area in the middle, and the adjacent two color film areas are The hydrophilicity and hydrophobicity are different so that the red pixel layers 811 and the green pixel layers 812 are alternately arranged. A blank area is spaced between each red pixel layer 811 and each green pixel layer 812 to allow the blue light emitted by the blue quantum dot material in the light emitting layer 5 to pass through. The red pixel layer 821 and the green pixel layer 822 on the second cover plate 92 constitute the second color film layer 82, and its structure is the same as that of the first color film layer 81 on the first cover plate 91 mentioned in the above-mentioned embodiment , and will not be repeated here.

It should be noted that FIG. 2 only exemplarily shows the positional relationship between the red pixel layer 811 and the green pixel layer 812 and the blank areas, and does not show the shape, size and spacing of the red pixel layer 811 and the green pixel layer 812 , etc. relation.

Among them, the preparation materials of the red pixel layers 811 and 821 are photoluminescent red quantum dot light-emitting materials, the preparation materials of the green pixel layers 812 and 822 are photoluminescent green quantum dot light-emitting materials, and the preparation materials of the light-emitting layer 5 are electric Electroluminescent blue quantum dot luminescent material. Photoluminescence refers to the phenomenon that objects rely on external light sources to illuminate, thereby obtaining energy and causing excitation to emit light; electroluminescence refers to the electric field generated by the voltage applied to the two electrodes, and the electrons excited by the electric field hit the luminous center, causing The transition, change and recombination of electrons between energy levels lead to a physical phenomenon of luminescence. The electroluminescent blue quantum dot light-emitting material in the light-emitting layer 5 emits blue light under the action of the electric field, and emits to the upper and lower sides, passing through the hole transport layer 4, the hole injection layer 3, the anode layer 2 and the substrate 1 respectively. The first color film layer 81 reaches the second color film layer 82 through the electron transport layer 6 and the cathode layer 7 . Under the irradiation of blue light, the red quantum dot light-emitting material and the green quantum dot light-emitting material in the first color film layer 81 and the second color film layer 82 produce photoluminescence phenomenon, and red light is emitted in the red pixel layers 811 and 821. The green pixel layers 812 and 822 emit green light, while the blue light is emitted through the blank area between the red pixel layers 811 and 821 and the green pixel layers 812 and 822, so that the first cover plate and the second cover plate of the quantum dot light-emitting diode It emits three colors of red, blue and green on both sides to achieve the effect of full color on both sides.

A quantum dot light-emitting diode device provided by an embodiment of the present invention includes a substrate, on which an anode layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode layer, and the The first color film layer formed on the first cover plate and laminated with the substrate pair group, and the second color film layer formed on the second cover plate and laminated with the cathode layer pair group, the first cover plate and The second cover plate separates a plurality of color film regions, and the two adjacent color film regions have different hydrophilicity and hydrophobicity. The first color film layer and the second color film layer are red pixel layers prepared on the color film regions. In combination with the green pixel layer, a double-sided full-color quantum dot light-emitting diode device can be prepared in a solution state process, which simplifies the preparation process and reduces the preparation cost.

On the basis of the above embodiment, specifically, the first color film layer 81 on the first cover plate 91 and the second color film layer 82 on the second cover plate 92 are prepared by a solution process. Optionally, the The substrate 1, the anode layer 2, the hole injection layer 3, the hole transport layer 4, the light emitting layer 5, the electron transport layer 6 and the cathode layer 7 of the quantum dot light-emitting diode device are prepared by a solution state process; the substrate 1, the anode layer 2, The hole injection layer 3, the hole transport layer 4, the light-emitting layer 5, the electron transport layer 6 and the cathode layer 7 have good light transmittance, so that the blue light emitted by the light-emitting layer 5 can smoothly pass through the substrate 1, the anode layer 2, the air The hole injection layer 3 , the hole transport layer 4 , the light emitting layer 5 , the electron transport layer 6 and the cathode layer 7 reach the first color film layer 81 and the second color film layer 82 .

Optionally, the substrate 1 of the quantum dot light-emitting diode device may be a flexible substrate, and the material of the flexible substrate may be polyethylene terephthalate (PET), polyethylene naphthalate (PEN). ), polyimide, polymethacrylate, polyacrylonitrile, polyetheretherketone, polyethersulfone, vinyl alcohol, polycarbonate, polyoxymethylene resin, polyurethane, polyolefin, polyethylene, metal foil, Ultra-thin glass, paper substrates, silk fabrics or biocomposites, etc. Optionally, the substrate 1 of the quantum dot light-emitting diode device may also be a rigid substrate, and the material of the rigid substrate may be glass or the like, wherein the substrate 1 of the quantum dot light-emitting diode device is a transparent substrate.

The first cover plate 91 and the second cover plate 92 are both transparent cover plates, and the second cover plate 91 and the second cover plate 92 can be the same as the above-mentioned substrate 1 .

On the basis of the above embodiment, the material of the light-emitting layer can be electroluminescent red quantum dot light-emitting material, and the preparation materials of the first color film layer and the second color film layer are photoluminescent blue quantum dot light-emitting material and Green quantum dot light-emitting material; or the material of the light-emitting layer can be electroluminescent green quantum dot light-emitting material, and the preparation materials of the first color film layer and the second color film layer are photoluminescent blue quantum dot light-emitting material and red Quantum dot luminescent material. The selection of the light-emitting materials in the light-emitting layer, the first color film layer and the second color film layer only needs to satisfy the combination of the three primary colors of red, green and blue.

On the basis of the above-mentioned embodiment, the first color film layer 81 formed on the first cover plate 91 by pressing only one pair of substrates, or the second cover plate only by pressing seven pairs of cathode layers. The second color film layer 82 on 92 is formed to prepare a single-layer full-color quantum dot light-emitting diode device.

Embodiment 2

This embodiment is an explanation of the corresponding preparation method of the quantum dot light-emitting diode device described in the first embodiment. FIG. 3 is a flow chart of the preparation method of the quantum dot light-emitting diode device provided in the second embodiment of the present invention. As shown in Figure 3, the preparation method comprises the following steps:

S210 , stacking an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode layer in sequence on the substrate.

Among them, please continue to refer to FIG. 1, the substrate 1 is a transparent substrate, and the anode layer 2, the hole injection layer 3, the hole transport layer 4, the light emitting layer 5, the electron transport layer 6 and the cathode layer are sequentially prepared on the substrate by a solution state process. 7. In this embodiment, the material of the light-emitting layer 5 is a blue quantum dot light-emitting material.

S220. Prepare a plurality of spaced color film regions on the first cover plate and the second cover plate respectively, and the hydrophilicity and hydrophobicity of two adjacent color film regions are different, and form red pixel layers in the color film regions respectively and a green pixel layer, a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate.

A blank area is arranged between the two spaced color film areas, and the blank area is used to transmit one of the three primary colors of light emitted from the light-emitting layer. The hydrophilic and hydrophobic properties of two adjacent color film regions are different, the hydrophilic region is easy to adsorb water-based substances, and the hydrophobic region is easy to adsorb oily substances. Exemplarily, the red pixel layer may be formed in the hydrophilic color film area, the green pixel layer may be formed in the hydrophobic color film area, and the middle blank area transmits blue light; or the green pixel layer may be formed in the hydrophilic color film area, and the hydrophobic color film area may be formed. The areas form red pixel layers, and the blank areas in the middle transmit blue light. The first color film layer on the first cover plate and the second color film layer on the second cover plate are both prepared from the red pixel layer area, the blank area and the green pixel layer area.

S230 , pressing the first color film layer formed on the first cover plate with the substrate pair, and combining the second color film layer formed on the second cover plate with the substrate pair The cathode layers are pressed together to form the quantum dot light emitting diode device.

The pairing press bonding refers to the bonding of the first cover plate and the second cover plate with the substrate and the cathode layer respectively by techniques such as sealant coating, so that the first color film layer and the second color film layer are respectively attached to the substrate and the cathode layer. The cathode layers are closely attached to form a quantum dot light-emitting diode device.

It should be noted that the first color film layer on the first cover plate and the second color film layer on the second cover plate can be prepared separately and independently, so the sequence of the above steps S210 and S220 can be changed.

It should be noted that in this embodiment, the material of the light-emitting layer is blue quantum dot light-emitting material, and the material of the color film layer is red quantum dot light-emitting material and green quantum dot light-emitting material. The material of the color film layer only needs to satisfy the matching and combination of the three primary colors of red, green and blue, and is not limited to the color selection in this embodiment.

The embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode device. A plurality of spaced color film regions are respectively prepared on a first cover plate and a second cover plate, and the affinity of the adjacent two color film regions is The water is different, the red pixel layer and the green pixel layer are respectively formed in the color film area, and the first color film layer and the second color film layer are respectively formed on the first cover plate and the second cover plate; The first color film layer formed on the first cover plate and the substrate pair are pressed together, and the second color film layer formed on the second cover plate and the cathode layer are paired The quantum dot light-emitting diode device is formed together by pressing together, thereby realizing the preparation of a double-sided full-color quantum dot light-emitting diode device by a solution state process, simplifying the preparation process and reducing the preparation cost.

On the basis of the above embodiment, a patterned cathode layer is prepared on the electron transport layer to realize the image display of the quantum dot light-emitting diode device. The specific preparation steps may include: after placing a third mask on the electron transport layer Performing ultraviolet ozone or plasma treatment to form a patterned hydrophilic region in the third exposure region; uniformly coating a conductive material on the electron transport layer forming the hydrophilic region to form a patterned cathode layer. After ultraviolet ozone or plasma treatment, a chemical reaction occurs in the third exposure area, and hydrophilic groups are generated on the exposed area of the electron transport layer to form a hydrophilic area, so that aqueous substances are easily adsorbed in this area. In the exposed area, no hydrophilic substances are adsorbed due to the absence or the presence of only a very small amount of hydrophilic groups. The conductive material is dispersed in the aqueous solvent, and when the conductive material is uniformly coated on the electron transport layer, the hydrophilic groups in the hydrophilic region adsorb the aqueous substances, so that the conductive material stays in the hydrophilic region, while for the non-hydrophilic region In the water region, there is no conductive material, resulting in a patterned cathode layer.

On the basis of the above-mentioned embodiment, a patterned cathode layer is prepared on the electron transport layer to realize the image display of the quantum dot light-emitting diode device. The specific preparation steps may further include: coating a glass substrate containing a photocuring agent silver nanowires, placing a third mask for UV treatment and ultrasonication to leave patterned silver nanowire electrodes, and then annealing at 150°C for 30 minutes to prepare a patterned conductive electrode layer; A layer of polydimethylsiloxane (PDMS) is uniformly coated on the conductive electrode layer, and placed at 80°C for curing for 3 hours; after curing, the conductive electrode layer will adhere to the PDMS layer , peel off the PDMS from the glass substrate, and then the conductive electrode layer is transferred from the glass substrate to the PDMS to form a patterned PDMS/silver nanowire conductive electrode layer; then the PDMS layer with the conductive electrode layer is pasted. combined on the electron transport layer as a cathode layer.

It should be noted that the electrode material used in this embodiment is nano-silver wire, but is not limited to nano-silver wire, and can also be other conductive materials such as metal nanowires, metal nanoparticles, carbon nanotubes, and graphene.

Embodiment 3

FIG. 4 is a flowchart of a method for manufacturing a quantum dot light-emitting diode device according to Embodiment 3 of the present invention. The preparation method provided in this embodiment is embodied on the basis of the above-mentioned embodiment. Specifically, referring to FIG. 4 , the method for preparing a quantum dot light-emitting diode device provided in this embodiment specifically includes the following steps:

S310 , stacking an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode layer in sequence on the substrate.

S320. Place a first mask on the first cover plate and the second cover plate to form a first exposure area, perform hydrophobic treatment on the first exposure area, and place a first mask on the first cover plate and the second cover plate to form a first exposure area. A hydrophobic color film area is formed on the second cover plate.

A first exposure area is formed in the area covered by the first mask of the first cover plate and the second cover plate, and the first exposure area is first treated with ultraviolet light, ozone or plasma technology, so that the first exposure area has Hydrophilic, and then use OTS (octadecyltrichlorosilane, C ₁₈ H ₃₇ Cl ₃ Si) to perform hydrophobic treatment on the hydrophilic region to form a hydrophobic region. The purpose of performing the hydrophobicity treatment on the first exposure area first is to form a hydrophobic layer with better performance in the first exposure area. Of course, other hydrophobic treatment techniques can also be used to form the hydrophobic region, for example, HDMS (hexamethyldisilazane, C ₆ H ₁₉ NSi ₂ ) steaming is used to form a hydrophobic layer in the first exposure region.

S330. Place a second mask on the first cover plate and the second cover plate to form a second exposure area, perform hydrophilic treatment on the second exposure area, and place a second mask on the first cover plate and the second cover plate to form a second exposure area. A hydrophilic color film area is formed on the second cover plate, wherein the hydrophobic color film area and the hydrophilic color film area are alternately distributed at intervals.

Wherein, the first mask can be the same as or different from the first mask, the second exposure area is located in other areas except the first exposure area, and the second exposure area is treated with ultraviolet light, ozone or plasma, etc. The hydrophilic layer is formed, so far, the hydrophobic color film area and the hydrophilic color film area are formed on the first cover plate and the second cover plate, and the hydrophobic color film area and the hydrophilic color film area are alternately distributed.

S340. Apply a solution-state process on the color film regions of the first cover plate and the second cover plate to coat oil-based red quantum dot light-emitting materials and water-based green quantum dot light-emitting materials, so that the hydrophobic color film regions are formed A red pixel layer and a green pixel layer are formed in the hydrophilic color film area, and a first color film layer and a second color film layer are formed on the first cover plate and the second cover plate respectively.

The oily red quantum dot light-emitting material is uniformly coated on the first cover plate by a solution process. Due to the difference in hydrophilicity in different regions of the first cover plate, the oily red quantum dot light-emitting material automatically aggregates in the hydrophobic color due to its hydrophobic properties. film area, instead of staying in the hydrophilic color film area, and then drying to form a red pixel layer; after that, the water-based green quantum dot light-emitting material is uniformly coated, and the water-based green quantum dot light-emitting material automatically aggregates due to its hydrophilicity In the hydrophilic color film area, instead of staying in the hydrophobic color film area, a green pixel layer is formed after drying treatment, while the middle blank area does not form a red or green pixel layer due to its lack of obvious hydrophilicity and hydrophobicity. So far, the first color film layer composed of the red pixel layer, the green pixel layer and the blank area between the two is formed on the first cover plate, and the preparation method of the second color film layer produced on the second cover plate is the same as this, It is not repeated here.

It should be noted that the preparation sequence of the red pixel layer and the green pixel layer can be changed, in other words, the green pixel layer can also be prepared first, and then the red pixel layer can be prepared.

S350 , pressing the first color film layer formed on the first cover plate with the substrate pair, and combining the second color film layer formed on the second cover plate with the substrate pair The cathode layers are pressed together to form the quantum dot light emitting diode device.

Step S350 is the same as step S230 in the above-mentioned embodiment, and details are not repeated here.

The embodiment of the present invention provides a preparation method of a quantum dot light emitting diode device, by applying a solution state process to coat an oil-based red quantum dot light-emitting material and a water-based green quantum dot on the colored film regions of the first cover plate and the second cover plate Light-emitting material, so that the red pixel layer is formed in the hydrophobic color film area and the green pixel layer is formed in the hydrophilic color film area, and the first color film layer and the second color film are respectively formed on the first cover plate and the second cover plate layer, the first color film layer formed on the first cover plate and the substrate pair group are pressed together, and the second color film layer formed on the second cover plate and the cathode layer pair group are pressed together to form quantum point light-emitting diode devices, so as to realize the preparation of double-sided full-color quantum dot light-emitting diode devices in a solution state process, simplify the preparation process and reduce the preparation cost.

Embodiment 4

FIG. 5 is a flowchart of a method for manufacturing a quantum dot light-emitting diode device provided in Embodiment 4 of the present invention. The preparation method provided in this embodiment is embodied on the basis of the above-mentioned embodiment. Specifically, referring to FIG. 5 , the method for preparing a quantum dot light-emitting diode device provided in this embodiment specifically includes the following steps:

S410 , layer an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode layer in sequence on the substrate.

S420, placing a first mask on the first cover plate and the second cover plate to form a first exposure area, performing a hydrophobization treatment on the first exposure area, and placing a first mask on the first cover plate and the second cover plate to form a first exposure area. A hydrophobic color film area is formed on the second cover plate.

S430. Place a second mask on the first cover plate and the second cover plate to form a second exposure area, perform hydrophilic treatment on the second exposure area, and place a second mask on the first cover plate and the second cover plate to form a second exposure area. A hydrophilic color film area is formed on the second cover plate, wherein the hydrophobic color film area and the hydrophilic color film area are alternately distributed at intervals.

Steps S410 , 420 and 430 are the same as steps S310 , S320 and S330 in the above-mentioned embodiment, and are not repeated here.

S440 , coating water-based red quantum dot light-emitting materials and oil-based green quantum dot light-emitting materials on the color film regions of the first cover plate and the second cover plate using a solution process, so that the hydrophilic color film regions are A red pixel layer is formed and a green pixel layer is formed in the hydrophobic color film area, and a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate.

The water-based red quantum dot light-emitting material is uniformly coated on the first cover plate by a solution-state process. Due to the difference in hydrophilicity in different regions of the first cover plate, the water-based red quantum dot light-emitting material automatically aggregates on the hydrophilic property due to its hydrophilic nature. The water color film area, instead of staying in the hydrophobic color film area, is then dried to form a red pixel layer; after that, the oily green quantum dot light-emitting material is uniformly coated, and the oily green quantum dot light-emitting material automatically aggregates due to its hydrophobicity In the hydrophobic color film area, instead of staying in the hydrophilic color film area, a green pixel layer is formed after drying treatment, while the middle blank area does not form a red or green pixel layer due to its lack of obvious hydrophilicity and hydrophobicity. So far, the first color film layer composed of the red pixel layer, the green pixel layer and the blank area between the two is formed on the first cover plate, and the preparation method of the second color film layer produced on the second cover plate is the same as this, It is not repeated here.

It should be noted that the preparation sequence of the red pixel layer and the green pixel layer can be changed, in other words, the green pixel layer can also be prepared first, and then the red pixel layer can be prepared.

S450 , pressing the first color film layer formed on the first cover plate with the substrate pair, and combining the second color film layer formed on the second cover plate with the substrate pair The cathode layers are pressed together to form the quantum dot light emitting diode device.

Step S450 is the same as step S350 in the above-mentioned embodiment, and details are not repeated here.

It should be noted that the difference between the third embodiment and the fourth embodiment is that the properties of the red quantum dot light-emitting material and the green quantum dot light-emitting material used are different. In Example 3, the oil-based red quantum dot light-emitting material and the water-based green quantum dot light-emitting material are coated on the color film regions of the first cover plate and the second cover plate by a solution process. Oily, the oily red quantum dot light-emitting material automatically gathers in the hydrophobic area of the color film layer, and forms a red pixel layer after drying; because the hydrophilic color film area is hydrophilic, the water-based green quantum dot light-emitting material automatically gathers in the area. The hydrophilic area of the color film layer forms a green pixel layer after drying. In Example 4, the red quantum dot light-emitting material used is water-based, while the green quantum dot light-emitting material is oil-based. Correspondingly, the hydrophilic color film areas on the first cover plate and the second cover plate are formed. The red pixel layer forms the green pixel layer in the hydrophobic color film area. By the method described in the above embodiments, red pixel layers and green pixel layers alternately distributed at intervals are formed on the first cover plate and the second cover plate.

An embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode device, which comprises coating water-based red quantum dot light-emitting materials and oil-based green quantum dots on the colored film regions of the first cover plate and the second cover plate by using a solution state process A luminescent material, so that a red pixel layer is formed in the hydrophilic color film area and a green pixel layer is formed in the hydrophobic color film area, and a first color film layer and a second color film are respectively formed on the first cover plate and the second cover plate. layer, the first color film layer formed on the first cover plate and the substrate pair group are pressed together, and the second color film layer formed on the second cover plate and the cathode layer pair group are pressed together to form quantum point light-emitting diode devices, so as to realize the preparation of double-sided full-color quantum dot light-emitting diode devices in a solution state process, simplify the preparation process and reduce the preparation cost.

Embodiment 5

FIG. 6 is a schematic structural diagram of another quantum dot light emitting diode device provided in Embodiment 5 of the present invention. As shown in FIG. 6 , the quantum dot light emitting diode device includes: a blue light quantum dot light emitting diode 10, which emits light with the blue light quantum dots The first color film layer 81 formed on the first cover plate 91 is laminated with the substrate 101 of the diode 10, and the second cover is laminated with the cathode layer 103 of the blue quantum dot light emitting diode 10. The second color film layer 82 on the board 92; wherein, the first cover plate 91 and the second cover plate 92 include a plurality of color film areas arranged at intervals, and the affinity of two adjacent color film areas is Different in water, the first color film layer 81 and the second color film layer 82 are a combination of red pixel layers 811 and 821 and green pixel layers 812 and 822 prepared on the color film area.

The structures of the first color film layer 81 on the first cover plate 91 and the second color film layer 82 on the second cover plate 92 in the quantum dot light-emitting diode device are the same as those mentioned in the above-mentioned embodiments. No longer.

On the basis of the above embodiment, the quantum dot light-emitting diode device can also be a red light quantum dot light-emitting diode, and the preparation materials of the first color film layer and the second color film layer are photoluminescent blue quantum dot light-emitting materials and green The combination of quantum dot light-emitting materials; or the preparation materials of green quantum dot light-emitting diode, the first color film layer and the second color film layer are the combination of photoluminescent blue quantum dot light-emitting material and red quantum dot light-emitting material.

The embodiment of the present invention is based on the first embodiment, and the substrate, the anode layer, the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer and the cathode layer in the first embodiment are used to emit light with off-the-shelf blue light quantum dots Instead of diode devices, on the basis of ready-made blue quantum dot light-emitting diodes, the first color film layer formed on the first cover plate is laminated on the substrate pair, and the second color film layer is laminated with the cathode layer pair. The second color film layer on the cover plate, wherein the first color film layer and the second color film layer are prepared by the preparation method mentioned in the above embodiment, so as to realize the preparation of double-sided full-color quantum dots in a solution state process The light emitting diode device simplifies the preparation process and reduces the preparation cost.

Embodiment 6

This embodiment is an explanation of the corresponding preparation method of the quantum dot light-emitting diode device described in the fifth embodiment. FIG. 7 is a flowchart of another quantum dot light-emitting diode device preparation method provided by the sixth embodiment of the present invention. As shown in Figure 7, the preparation method comprises the following steps:

S710. Prepare a plurality of spaced color film regions on the first cover plate and the second cover plate respectively, and the hydrophilicity and hydrophobicity of two adjacent color film regions are different, and form red pixel layers in the color film regions respectively and a green pixel layer, a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate.

S720, pressing the first color film layer formed on the first cover plate with the substrate pair of the blue quantum dot light-emitting diode, and pressing the second color film layer formed on the second cover plate The layer is combined with the cathode layer pair of the blue quantum dot light emitting diode to form the quantum dot light emitting diode device.

The preparation process of the first color film layer on the first cover plate and the second color film layer on the second cover plate in this method is the same as the preparation process of the above-mentioned embodiment, and will not be repeated here.

Embodiment 5

Embodiments of the present invention further provide a quantum dot light emitting diode display panel, the quantum dot light emitting diode display panel includes the quantum dot light emitting diode devices described in the above embodiments arranged in an array, the quantum dot light emitting diode display panel Necessary packaging components and control circuits may also be included, which are not limited herein. Since the principle of the problem to be solved by the quantum dot light emitting diode display panel is similar to the above quantum dot light emitting diode device, its implementation can refer to the implementation of the above quantum dot light emitting diode device, and the repetition will not be repeated.

According to an embodiment of the present invention, a quantum dot light emitting diode display panel is provided. The display panel includes a plurality of color film regions spaced apart on a first cover plate and a second cover plate, and two adjacent color film regions are formed. The hydrophilicity and hydrophobicity of the regions are different, the red pixel layer and the green pixel layer are respectively formed in the color film region, and the first color film layer and the second color film are respectively formed on the first cover plate and the second cover plate. layer; the first color film layer formed on the first cover plate and the substrate pair are pressed together, and the second color film layer formed on the second cover plate is combined with the The cathode layers are pressed together to form the quantum dot light emitting diode device, and the double-sided full-color quantum dot light emitting diode device is prepared by a solution state process, which simplifies the preparation process and reduces the manufacturing cost.

Note that the above are only preferred embodiments of the present invention and applied technical principles. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the protection scope of the present invention. Therefore, although the present invention has been described in detail through the above embodiments, the present invention is not limited to the above embodiments, and can also include more other equivalent embodiments without departing from the concept of the present invention. The scope is determined by the scope of the appended claims.

Claims (20)

1. A quantum dot light emitting diode device, comprising: the light-emitting diode comprises a substrate, wherein an anode layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, a cathode layer, a first color film layer which is formed on a first cover plate and is in paired press fit with the substrate, and a second color film layer which is formed on a second cover plate and is in paired press fit with the cathode layer are sequentially stacked on the substrate;

the first cover plate and the second cover plate comprise a plurality of color film regions which are arranged at intervals, the hydrophilicity and the hydrophobicity of two adjacent color film regions are different, the first color film layer and the second color film layer are a combination of a red pixel layer and a green pixel layer which are prepared on the color film regions, and the preparation material of the light-emitting layer is a blue light quantum dot light-emitting material;

the red pixel layer and the green pixel layer are respectively corresponding to one color film area, the hydrophilicity and the hydrophobicity of the red pixel layer and the hydrophobicity of the green pixel layer are different, a middle blank area is formed between the red pixel layer and the green pixel layer, and the red pixel layer and the green pixel layer are alternately arranged at intervals.

2. The quantum dot light-emitting diode device according to claim 1, wherein the first color film layer on the first cover plate and the second color film layer on the second cover plate are prepared by a solution process.

3. The quantum dot light-emitting diode device according to claim 1, wherein the anode layer, the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the cathode layer are prepared using a solution process.

4. The quantum dot light-emitting diode device according to claim 1, wherein the red pixel layer is made of a photoluminescent red quantum dot light-emitting material, the green pixel layer is made of a photoluminescent green quantum dot light-emitting material, and the light-emitting layer is made of an electroluminescent blue quantum dot light-emitting material.

5. The quantum dot light-emitting diode device according to claim 1, wherein the first color film layer and the second color film layer are made of an oil-based red quantum dot light-emitting material and an aqueous green quantum dot light-emitting material; or the like, or, alternatively,

the first colored film layer and the second colored film layer are prepared from water-based red quantum dot luminescent materials and oily green quantum dot luminescent materials.

6. The quantum dot light-emitting diode device of claim 1, wherein the cathode layer is a patterned cathode layer.

7. A preparation method of a quantum dot light-emitting diode device is characterized by comprising the following steps:

sequentially laminating an anode layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode layer on a substrate;

respectively preparing a plurality of color film areas at intervals on a first cover plate and a second cover plate, wherein the hydrophilicity and the hydrophobicity of two adjacent color film areas are different, respectively forming a red pixel layer and a green pixel layer in the color film areas, and respectively forming a first color film layer and a second color film layer on the first cover plate and the second cover plate; the red pixel layer and the green pixel layer are respectively corresponding to one color film area, the hydrophilicity and the hydrophobicity of the red pixel layer and the hydrophobicity of the green pixel layer are different, an intermediate blank area is formed between the red pixel layer and the green pixel layer, and the red pixel layer and the green pixel layer are alternately arranged at intervals;

and pressing the first color film layer formed on the first cover plate and the substrate in pair, and pressing the second color film layer formed on the second cover plate and the cathode layer in pair to jointly form the quantum dot light-emitting diode device.

8. The method for preparing a color filter according to claim 7, wherein the step of preparing a plurality of color film regions on the first cover plate at intervals, and the hydrophilicity and hydrophobicity of two adjacent color film regions are different comprises:

placing a first mask on the first cover plate and the second cover plate to form a first exposure area, performing hydrophobic treatment on the first exposure area, and forming hydrophobic color film areas on the first cover plate and the second cover plate;

and placing a second mask on the first cover plate and the second cover plate to form a second exposure area, performing hydrophilization treatment on the second exposure area, and forming hydrophilic color film areas on the first cover plate and the second cover plate, wherein the hydrophobic color film areas and the hydrophilic color film areas are alternately distributed at intervals.

9. The method of claim 8, wherein the forming a red pixel layer and a green pixel layer in the color film region, respectively, and forming a first color film layer and a second color film layer on the first cover plate and the second cover plate, respectively, comprises:

coating an oily red quantum dot luminescent material and an aqueous green quantum dot luminescent material on the color film areas of the first cover plate and the second cover plate by adopting a solution state process, so that a red pixel layer is formed on the hydrophobic color film area and a green pixel layer is formed on the hydrophilic color film area, and a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate; or the like, or, alternatively,

coating a water-based red quantum dot luminescent material and an oil-based green quantum dot luminescent material on the color film areas of the first cover plate and the second cover plate by adopting a solution state process, so that a red pixel layer is formed on the hydrophilic color film area and a green pixel layer is formed on the hydrophobic color film area, and a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate.

10. The production method according to claim 7, wherein the stacking of the anode layer, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the cathode layer in this order on the substrate comprises:

and sequentially coating and preparing an anode layer, a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer on the substrate by adopting a solution process, and preparing a patterned cathode layer on the electron transport layer.

11. The method according to claim 10, wherein the step of preparing the patterned cathode layer on the electron transport layer comprises:

placing a third mask on the electron transport layer and then carrying out hydrophilization treatment to form a patterned hydrophilic region;

and uniformly coating a conductive material on the electron transport layer forming the hydrophilic region to form a patterned cathode layer.

12. The method according to claim 10, wherein the step of preparing the patterned cathode layer on the electron transport layer comprises:

uniformly coating a conductive electrode layer on a first substrate, placing a third mask on the conductive electrode layer, and sequentially performing ultraviolet exposure, ultrasonic treatment and annealing treatment to prepare a patterned conductive electrode layer;

and covering a polydimethylsiloxane layer on the patterned conductive electrode layer, transferring the patterned conductive electrode layer to the polydimethylsiloxane layer, and attaching the polydimethylsiloxane layer with the conductive electrode layer on the electron transmission layer to serve as a cathode layer.

13. A quantum dot light emitting diode device, comprising: the LED comprises a blue light quantum dot light-emitting diode, a first color film layer which is formed on a first cover plate and is in pair pressing with a substrate of the blue light quantum dot light-emitting diode, and a second color film layer which is formed on a second cover plate and is in pair pressing with a cathode layer of the blue light quantum dot light-emitting diode;

the first cover plate and the second cover plate comprise a plurality of color film areas which are arranged at intervals, the hydrophilicity and the hydrophobicity of two adjacent color film areas are different, and the first color film layer and the second color film layer are a combination of a red pixel layer and a green pixel layer which are prepared on the color film areas;

the red pixel layer and the green pixel layer are respectively corresponding to one color film area, the hydrophilicity and the hydrophobicity of the red pixel layer and the hydrophobicity of the green pixel layer are different, a middle blank area is formed between the red pixel layer and the green pixel layer, and the red pixel layer and the green pixel layer are alternately arranged at intervals.

14. The quantum dot light-emitting diode device according to claim 13, wherein the first color film layer on the first cover plate and the second color film layer on the second cover plate are prepared by a solution process.

15. The quantum dot light-emitting diode device according to claim 13, wherein the red pixel layer is made of a photoluminescent red quantum dot light-emitting material, and the green pixel layer is made of a photoluminescent green quantum dot light-emitting material.

16. The quantum dot light-emitting diode device according to claim 13, wherein the first color film layer and the second color film layer are made of an oil-based red quantum dot light-emitting material and an aqueous green quantum dot light-emitting material; or the like, or, alternatively,

the first colored film layer and the second colored film layer are prepared from water-based red quantum dot luminescent materials and oily green quantum dot luminescent materials.

17. A preparation method of a quantum dot light-emitting diode device is characterized by comprising the following steps:

respectively preparing a plurality of color film areas at intervals on a first cover plate and a second cover plate, wherein the hydrophilicity and the hydrophobicity of two adjacent color film areas are different, respectively forming a red pixel layer and a green pixel layer in the color film areas, and respectively forming a first color film layer and a second color film layer on the first cover plate and the second cover plate; the red pixel layer and the green pixel layer are respectively corresponding to one color film area, the hydrophilicity and the hydrophobicity of the red pixel layer and the hydrophobicity of the green pixel layer are different, an intermediate blank area is formed between the red pixel layer and the green pixel layer, and the red pixel layer and the green pixel layer are alternately arranged at intervals;

and pressing the first color film layer formed on the first cover plate and the substrate of the blue light quantum dot light-emitting diode in a paired mode, and pressing the second color film layer formed on the second cover plate and the cathode layer of the blue light quantum dot light-emitting diode in a paired mode to jointly form the quantum dot light-emitting diode device.

18. The method of claim 17, wherein the step of forming a plurality of spaced color film regions on the first cover sheet, and the hydrophilicity and hydrophobicity of two adjacent color film regions are different comprises:

placing a first mask on the first cover plate and the second cover plate to form a first exposure area, performing hydrophobic treatment on the first exposure area, and forming hydrophobic color film areas on the first cover plate and the second cover plate;

placing a second mask on the first cover plate and the second cover plate to form a second exposure area, carrying out hydrophilization treatment on the second exposure area, and forming hydrophilic color film areas on the first cover plate and the second cover plate, wherein the hydrophobic color film areas and the hydrophilic color film areas are alternately distributed at intervals.

19. The method of claim 18, wherein the forming a red pixel layer and a green pixel layer in the color film region, respectively, and forming a first color film layer and a second color film layer on the first cover plate and the second cover plate, respectively, comprises:

coating oil-based red quantum dot luminescent materials and water-based green quantum dot luminescent materials on the color film areas of the first cover plate and the second cover plate, so that a red pixel layer is formed in the hydrophobic color film area and a green pixel layer is formed in the hydrophilic color film area, and a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate; or the like, or, alternatively,

and water-soluble red quantum dot luminescent materials and oil-soluble green quantum dot luminescent materials are respectively coated on the color film areas of the first cover plate and the second cover plate, so that a red pixel layer is formed in the hydrophilic color film area, a green pixel layer is formed in the hydrophobic color film area, and a first color film layer and a second color film layer are respectively formed on the first cover plate and the second cover plate.

20. A quantum dot light emitting diode display panel comprising quantum dot light emitting diode devices according to any one of claims 1 to 6 or claims 13 to 16 arranged in an array.

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