CN108803161B - Display panel, method for manufacturing display panel, and display device - Google Patents
Display panel, method for manufacturing display panel, and display device Download PDFInfo
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- CN108803161B CN108803161B CN201810700738.7A CN201810700738A CN108803161B CN 108803161 B CN108803161 B CN 108803161B CN 201810700738 A CN201810700738 A CN 201810700738A CN 108803161 B CN108803161 B CN 108803161B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 126
- 239000002184 metal Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000010409 thin film Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000012797 qualification Methods 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 24
- 238000005530 etching Methods 0.000 description 16
- 238000000059 patterning Methods 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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Abstract
The invention discloses a display panel, a manufacturing method of the display panel and a display device, comprising the following steps: the device comprises a substrate base plate, a first metal layer, a first transparent electrode layer, a second metal layer and a second transparent electrode layer, wherein the first metal layer, the first transparent electrode layer, the second metal layer and the second transparent electrode layer are sequentially arranged on the substrate base plate; the first metal layer comprises a plurality of scanning lines extending along a first direction, the second metal layer comprises a plurality of data lines extending along a second direction, and the plurality of scanning lines and the plurality of data lines are intersected to define a plurality of pixel regions; the pixel region comprises a light-transmitting region and a non-light-transmitting region, and the light-transmitting region comprises a pixel electrode; the first transparent electrode layer comprises a plurality of first electrodes, the first electrodes and the pixel electrodes are arranged in a one-to-one opposite mode in the direction perpendicular to the substrate base plate, and the first electrodes are overlapped with the drain electrodes and not overlapped with the source electrodes. Compared with the prior art, due to the fact that the first transparent electrode layer is arranged, when the second insulating layer is patterned, the first insulating layer cannot be affected, and the manufacturing precision of the display panel film layer and the qualification rate of the display panel are improved.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a display panel, a method for manufacturing the display panel, and a display device.
Background
Display panels of the prior art are generally provided with a plurality of conductive layers, which are separated by insulating layers, so as to prevent interference between conductive layers of different potentials. The insulating layer is usually formed of an inorganic material such as silicon nitride or silicon oxide.
However, since the conductive layer is usually formed by patterning a conductive material through an etching process, a direct contact portion exists between an insulating layer formed subsequently on the conductive layer and an insulating layer already formed, and during the patterning process of the insulating layer formed subsequently on the conductive layer, a portion of the insulating layer newly formed is easily etched away due to the same dry etching process, thereby affecting the manufacturing accuracy of the subsequent film layer. If different etching processes are adopted, the process difficulty is high, and the reduction of the production cost is not facilitated.
Disclosure of Invention
In view of the above, the present invention provides a display panel, a method for manufacturing the display panel, and a display device.
The present invention provides a display panel, comprising: the device comprises a substrate base plate, a first metal layer, a first transparent electrode layer, a second metal layer and a second transparent electrode layer, wherein the first metal layer, the first transparent electrode layer, the second metal layer and the second transparent electrode layer are sequentially arranged on the substrate base plate; a first insulating layer is arranged between the first metal layer and the first transparent electrode layer, and a second insulating layer is arranged between the second metal layer and the second transparent electrode layer; the first metal layer comprises a plurality of scanning lines extending along a first direction, the second metal layer comprises a plurality of data lines extending along a second direction, and the plurality of scanning lines and the plurality of data lines are intersected to define a plurality of pixel regions; the pixel region comprises a light-transmitting region and a non-light-transmitting region, the light-transmitting region comprises a pixel electrode, and the non-light-transmitting region comprises a thin film transistor and a common electrode; the thin film transistor comprises a grid electrode, a semiconductor layer, a source electrode and a drain electrode, wherein the grid electrode and a common electrode are positioned on a first metal layer, and the source electrode and the drain electrode are positioned on a second metal layer; the pixel electrode is positioned on the second transparent electrode layer and extends to the non-light-transmitting area, and the pixel electrode is electrically connected with the drain electrode; the first transparent electrode layer includes a plurality of first electrodes; the first electrodes and the pixel electrodes are arranged in a one-to-one opposite mode in the direction perpendicular to the substrate base plate, and the first electrodes are overlapped with the drain electrodes and not overlapped with the source electrodes.
The invention provides a manufacturing method of a display panel, which comprises the following steps: providing a substrate base plate; sequentially forming a first metal layer, a first insulating layer, a first transparent electrode layer, a second metal layer, a second insulating layer and a second transparent electrode layer on a substrate; the first metal layer comprises a plurality of scanning lines extending along a first direction, the second metal layer comprises a plurality of data lines extending along a second direction, and the plurality of scanning lines and the plurality of data lines are intersected to define a plurality of pixel regions; the pixel region comprises a light-transmitting region and a non-light-transmitting region, the light-transmitting region comprises a pixel electrode, and the non-light-transmitting region comprises a thin film transistor and a common electrode; the thin film transistor comprises a grid electrode, a semiconductor layer, a source electrode and a drain electrode, wherein the grid electrode and a common electrode are positioned on a first metal layer, and the source electrode and the drain electrode are positioned on a second metal layer; the pixel electrode is positioned on the second transparent electrode layer and extends to the non-light-transmitting area, and the pixel electrode is electrically connected with the drain electrode; the first transparent electrode layer includes a plurality of first electrodes; the first electrodes and the pixel electrodes are arranged in a one-to-one opposite mode in the direction perpendicular to the substrate base plate, and the first electrodes are overlapped with the drain electrodes and not overlapped with the source electrodes.
The invention also provides a display device which comprises the display panel provided by the invention.
Compared with the prior art, the display panel, the manufacturing method of the display panel and the display device provided by the invention at least realize the following beneficial effects:
1. the first transparent electrode layer is arranged between the first insulating layer and the second metal layer, so that the first transparent electrode layer and the second metal layer can have the same potential, the potential can be provided for the first transparent electrode layer without additionally adding wiring, and the potential of other film layers can not be influenced;
2. the first transparent electrode layer can be patterned by adopting an etching process different from that of the insulating layer, and when the second insulating layer is patterned, the first electrode covers the first insulating layer, so that the first insulating layer is not affected, and the manufacturing precision of the display panel film layer and the qualification rate of the display panel are improved;
3. the first transparent electrode layer and the semiconductor layer of the thin film transistor can be directly formed on the first insulating layer, and although one etching step is added, the whole thickness of the display panel is not affected, and the display device is light and thin.
4. The first electrode is closer to the common electrode than the pixel electrode, and the first electrode and the pixel electrode are at the same potential, and a larger storage capacitor is formed between the first electrode and the common electrode, so that the display stability is maintained.
Of course, it is not necessary for any product in which the present invention is practiced to achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic plan view of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a structure of the pixel region in FIG. 1;
FIG. 3 is a schematic view of a cross-sectional view taken along A-A of FIG. 2;
FIG. 4 is a schematic view of another cross-sectional structure taken along the line A-A in FIG. 2;
FIG. 5 is a schematic view of a further cross-sectional configuration taken along line A-A of FIG. 2;
FIG. 6 is a schematic view of a further cross-sectional configuration taken along line A-A of FIG. 2;
FIG. 7 is a schematic view of another structure of the pixel region of FIG. 1;
FIG. 8 is a schematic cross-sectional view taken along line B-B of FIG. 7;
FIG. 9 is a schematic view of an alternative cross-sectional configuration taken along line B-B of FIG. 7;
fig. 10 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention;
FIGS. 11-17 are schematic cross-sectional views of display panels manufactured by the manufacturing method of FIG. 10;
fig. 18 is a schematic cross-sectional view of a display panel manufactured by another method for manufacturing a display panel according to an embodiment of the invention;
fig. 19 is a schematic cross-sectional view illustrating a display panel manufactured by a method of manufacturing a display panel according to yet another embodiment of the present invention;
fig. 20 to 22 are schematic cross-sectional views illustrating a display panel manufactured by another method for manufacturing a display panel according to an embodiment of the invention;
fig. 23 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Referring to fig. 1, fig. 2 and fig. 3 in combination, the present invention provides a display panel, including: a substrate base plate 10, and a first metal layer 11, a first transparent electrode layer 13, a second metal layer 14 and a second transparent electrode layer 16 which are sequentially arranged on the substrate base plate 10; a first insulating layer 12 is arranged between the first metal layer 11 and the first transparent electrode layer 13, and a second insulating layer 15 is arranged between the second metal layer 14 and the second transparent electrode layer 16;
the first metal layer 11 includes a plurality of scan lines G extending along a first direction X, the second metal layer 14 includes a plurality of data lines D extending along a second direction Y, and the plurality of scan lines G and the plurality of data lines D intersect to define a plurality of pixel regions P; the pixel region P includes a light-transmitting region P1 and a non-light-transmitting region P2, the light-transmitting region P1 includes the pixel electrode 20, and the non-light-transmitting region P2 includes the thin film transistor T and the common electrode 30; the thin film transistor T comprises a gate T1, a semiconductor layer T2, a source T3 and a drain T4, the gate T1 and the common electrode 30 are located on the first metal layer 11, and the source T3 and the drain T4 are located on the second metal layer 14; the pixel electrode 20 is located on the second transparent electrode layer 16 and extends to the non-light-transmitting region P2, and the pixel electrode 20 is electrically connected to the drain electrode T4;
the first transparent electrode layer 13 includes a plurality of first electrodes 130; in a direction perpendicular to the substrate 10, the first electrodes 130 and the pixel electrodes 20 are disposed opposite to each other, and overlap the drain electrodes T4 and do not overlap the source electrodes T3.
Specifically, as shown in fig. 2, the pixel electrode P is defined by the intersection of the scan line G and the data line D, the pixel region P includes a light-transmitting region P1 and a non-light-transmitting region P2, the non-light-transmitting region P2 is located at the periphery of the light-transmitting region P1, the light-transmitting region P1 includes the pixel electrode 20, and the pixel electrode 20 is electrically connected to the data line D through the thin film transistor T. Here, the gate electrode T1 of the thin film transistor T may be formed integrally with the scan line G closest thereto, and the source electrode T3 of the thin film transistor T may be formed integrally with the data line D closest thereto.
It should be noted that, in order to more intuitively illustrate the technical scheme of the present invention, other film layer structures are not illustrated in fig. 2, and are not further described in the following; meanwhile, the pixel electrode 20 and the common electrode 30 illustrated in fig. 2 are only in a position relationship on a plane area, and the film layer structures of the two are shown in fig. 3.
In this embodiment, the first and second transparent electrode layers 13 and 16 may be formed of ITO (indium tin oxide), and thus may be patterned using a wet etching process. When the thin film transistor T supplies power to the pixel electrode 20 of the second transparent electrode layer 16, an electric field is formed between the pixel electrode 20 of the display panel and the common electrode on the opposite substrate, so that the liquid crystal molecules are controlled to rotate under the action of the electric field, and the display panel is in a display state. The shape of the common electrode 30 may be various, and the present embodiment does not specifically limit this, and a storage capacitor is formed between the pixel electrode 20 and the common electrode 30 to maintain a stable display image in a display state.
The first electrode 130 in the first transparent electrode layer 13 overlaps the drain electrode T4 of the thin film transistor T and does not overlap the source electrode T3 of the thin film transistor T, so that the first electrode 130 may have the same potential as the drain electrode T4. Meanwhile, since the pixel electrode 20 and the drain electrode T4 are electrically connected, the pixel electrode 20 can have the same potential as both the drain electrode T4 and the first electrode 130, and no additional trace is required to provide a potential for the first electrode 130. In addition, since the first electrode 130 and the semiconductor layer T2 can be directly formed on the first insulating layer 12, although the etching step of the first electrode 130 is added, the thickness of the entire display panel is not affected, which is beneficial to realizing the lightness and thinness of the display device.
The first insulating layer 12 and the second insulating layer 15 may be formed of an inorganic material, such as silicon nitride (SiN or Si)3N3) Or silicon oxide (SiO)2) Etc., so that patterning may be performed using a dry etching process. As shown in fig. 3, a first electrode 130 is further disposed between the first insulating layer 12 and the second insulating layer 15, and the first electrode 130 is located on the first transparent electrode layer 13, so that when the second insulating layer 15 is patterned by using a dry etching process, the dry etching process does not affect the first electrode 130, thereby effectively ensuring the manufacturing accuracy of each layer of the display panel.
Of course, the transparent electrodes and the insulating layer in this embodiment may also be formed of other materials, which is not particularly limited in this embodiment.
The display panel provided by the embodiment at least has the following technical effects:
1. the first transparent electrode layer is arranged between the first insulating layer and the second metal layer, so that the first transparent electrode layer and the second metal layer can have the same potential, the potential can be provided for the first transparent electrode layer without additionally adding wiring, and the potential of other film layers can not be influenced;
2. the first transparent electrode layer can be patterned by adopting an etching process different from that of the insulating layer, and when the second insulating layer is patterned, the first electrode covers the first insulating layer, so that the first insulating layer is not affected, and the manufacturing precision of the display panel film layer and the qualification rate of the display panel are improved;
3. the first transparent electrode layer and the semiconductor layer of the thin film transistor can be directly formed on the first insulating layer, although one etching step is added, the whole thickness of the display panel is not influenced, and the display device is light and thin;
4. the first electrode is closer to the common electrode than the pixel electrode, and the first electrode and the pixel electrode are at the same potential, and a larger storage capacitor is formed between the first electrode and the common electrode, so that the display stability is maintained.
In some alternative embodiments, please refer to fig. 2 and fig. 4 in combination, a reflective metal 40 is disposed on a side of the pixel electrode 20 close to the substrate 10; alternatively, the side of the pixel electrode 20 away from the base substrate 10 is provided with a reflective metal 40.
Specifically, the material of the reflective metal 40 may be aluminum, an aluminum alloy, silver, a composite layer of aluminum and molybdenum, or the like; the reflective metal 40 may be disposed on the side of the pixel electrode 20 close to the substrate 10, or may be disposed on the side of the pixel electrode 20 away from the substrate 10; the area and the plane shape of the reflective metal 40 can be designed according to actual needs; of course, the reflective metal 40 and the pixel electrode 20 may be in direct contact, or may be provided with other films, which is not limited in this embodiment.
The display panel may be classified into a transmissive display panel, a reflective display panel, and a transflective display panel according to applications. The reflective display panel and the transflective display panel achieve display by reflecting light source with the reflective metal layer.
In this embodiment, the reflective metal 40 is provided, and the display panel may be a reflective display panel or a transflective display panel, which is not particularly limited in this embodiment.
In addition, the distance between the reflective metals 40 in the adjacent pixel regions P should not be too small, otherwise, a short circuit phenomenon is likely to occur between the reflective metals 40, which affects the normal display of the display panel.
Optionally, the reflective metal 40 covers the surface of the pixel electrode 20. Specifically, the reflective metal 40 may be covered on a surface of the pixel electrode 20 close to the substrate 10, or may be covered on a surface of the pixel electrode 20 far from the substrate 10, which is not particularly limited in this embodiment.
As shown in fig. 4, when the reflective metal 40 in the present embodiment covers the surface of the pixel electrode 20 close to the substrate 10, since there is no insulating layer between the reflective metal 40 and the pixel electrode 20, but the reflective metal 40 and the pixel electrode 20 are in direct contact, the reflective metal 40 and the pixel electrode 20 can have the same potential, and no additional trace is needed. In this case, the pixel electrode 20 may be electrically connected to the drain electrode T4 of the thin film transistor T through the hole 19, or may be directly electrically connected to the drain electrode T4 of the thin film transistor T through the hole 19 by the reflective metal 40.
Optionally, referring to fig. 5, a third insulating layer 17 is disposed between the reflective metal 40 and the pixel electrode 20, and the reflective metal 40 is electrically connected to the pixel electrode 20.
In this embodiment, the reflective metal 40 is disposed on one side of the pixel electrode 20 close to the substrate base plate 10, and the film layer where the reflective metal 40 is disposed is separated from the second transparent electrode layer 16 where the pixel electrode 20 is disposed by disposing the third insulating layer 17, so that the film layer where the reflective metal 40 is disposed and the second transparent electrode layer 16 are prevented from being influenced by each other in the patterning process of the etching process, and the precision of manufacturing the film layer of the display panel is improved.
In order to ensure the uniformity of the electric potential, the reflective metal 40 still needs to be electrically connected to the pixel electrode 20, and in this case, the pixel electrode 20 and the drain electrode T4 may be electrically connected by electrically connecting the reflective metal 40 to the drain electrode T4 of the thin film transistor T.
Of course, when the reflective metal 40 is disposed on the side of the pixel electrode 20 away from the substrate 10, the pixel electrode 20 is still directly electrically connected to the pixel electrode shown in fig. 3.
Alternatively, as shown in fig. 6, when the display panel is a reflective display panel, since no backlight is provided, the drain T4 may extend to the transmissive region P1 in the tft T in the non-transmissive region P2, that is, the extension 18 is located in the transmissive region P1. Due to the presence of the first electrode 130, the extension 18 may be directly formed on the first electrode 130, so that the first electrode 130 and the drain T4 may be made to be at the same potential through the extension 18, and at this time, a gap may exist between the first electrode 130 and the drain T4 in a direction parallel to the substrate base 10.
In some alternative embodiments, please refer to fig. 7 and 8, the reflective metal 40 includes an opening portion 401 and a non-opening portion 402; in the direction perpendicular to the base substrate 10, the opening 401 and the light-transmitting region P1 overlap, and the drain T4 extends to the periphery of the opening 401; the second insulating layer 15 includes an insulating opening 150, the insulating opening 150 and the opening portion 401 are disposed opposite to each other, and the pixel electrode 20 is electrically connected to the first electrode 130 through the opening portion 401 and the insulating opening 150.
It should be noted that, in order to more intuitively illustrate the technical solution of the present invention, other film layer structures are not illustrated in fig. 7, and are not further described in the following; meanwhile, the reflective metal 40 and the common electrode 30 illustrated in fig. 7 are only in a positional relationship on a planar area, and the film structures of the two are shown in fig. 8.
In this embodiment, the drain T4 extends to the periphery of the opening 401, that is, the extension 18 avoids the opening 401, the backlight source is not shielded by the extension 18, in a direction perpendicular to the substrate 10, an area where the opening 401 is located is a transmission area, the transmission area includes only a part of the first electrode 130 and the pixel electrode 20 except the insulating layer, the first electrode 130 and the pixel electrode 20 are transparent electrodes, and the arrangement of the first electrode 130 does not substantially affect the brightness of the transmission area. The shape, position, and opening area of the opening 401 may be designed according to actual needs as long as the above structural relationship is satisfied, and this embodiment is not particularly limited.
The pixel electrode 20 is electrically connected to the first electrode 130 through the opening portion 401 and the insulating opening 150, so that the pixel electrode 20 directly contacts the first electrode 130. However, since the distance between the drain T4 of the tft T and the pixel electrode 20 is relatively large, in order to avoid a retardation phenomenon when an electrical signal is transmitted from the drain T4 to the pixel electrode 20 through the extension 18 or the first electrode 130, the drain T4 still needs to be electrically connected to the pixel electrode 20, thereby ensuring the uniformity of the display panel.
In addition, due to different etching processes, the reflective metal 40, the second insulating layer 15 and the extension part 18 do not affect film layers except for the reflective metal, the second insulating layer and the extension part in the patterning process, so that the transmission area of the display panel has high-precision transmission box thickness, and the optical stability of the display panel is ensured.
Alternatively, as shown in fig. 7 and 8, the common electrode 30 may be formed to surround the opening 401 in a direction perpendicular to the base substrate 10. In this embodiment, the common electrode 30 semi-surrounds the opening 401, that is, the common electrode 30 does not overlap the opening 401 in a direction perpendicular to the substrate 10, so that the common electrode 30 does not affect the light transmittance of the display panel. There are various semi-surrounding forms of the common electrode 30, and the present embodiment does not limit this form.
Optionally, as shown in fig. 9, the display panel may further include a black matrix 50, a color resistor 60, and a transparent substrate 70. The black matrix 50 and the color resistor 60 are both disposed on one side of the transparent substrate 70 close to the substrate 10, the black matrix 50 is made of a material with extremely low transmittance, and the color resistor 60 is made of a material with extremely high transmittance, so that light can only penetrate through the color resistor 60. The liquid crystal layer 80 of the display panel is located between the black matrix 50, the color resistor 60 and the pixel electrode 20.
In this embodiment, the color resistor 60 may be one of a transparent color resistor and a color resistor or a combination of both. Specifically, when the color resistor 60 is a transparent color resistor, the display panel can only display black and white images; when the color resistor 60 is a color resistor, the display panel can display a color image; when the color resistor 60 is a combination of a transparent color resistor and a color resistor, a part of the display panel can display a black-and-white image, and another part of the display panel can display a color image.
Since light can only transmit through the region where the color resistor 60 is located, the region where the color resistor 60 overlaps the opening 401 in the direction perpendicular to the base substrate 10 is the transmission region Q1, and the transmission cell thickness is h 1; the overlapped area of the color resistor 60 and the non-opening 402 is the reflection area Q2, the thickness of the reflection box is h2, so that the display panel is a transflective display panel, and the difference between h1 and h2 is the transflective step difference of each pixel in the display panel. As shown in fig. 9, the transflective step is also the sum of the thicknesses of the extension 18, the second insulating layer 15, and the non-opening 402.
Referring to fig. 1 to 3, fig. 10 and fig. 11 to 17, the present invention provides a method for manufacturing a display panel, including:
s101, providing a substrate base plate 10;
s102, sequentially forming a first metal layer 11, a first insulating layer 12, a first transparent electrode layer 13, a second metal layer 14, a second insulating layer 15 and a second transparent electrode layer 16 on a substrate base plate 10;
the first metal layer 11 includes a plurality of scan lines G extending along a first direction X, the second metal layer 14 includes a plurality of data lines D extending along a second direction Y, and the plurality of scan lines G and the plurality of data lines D intersect to define a plurality of pixel regions P;
the pixel region P includes a light-transmitting region P1 and a non-light-transmitting region P2, the light-transmitting region P1 includes the pixel electrode 20, and the non-light-transmitting region P1 includes the thin film transistor T and the common electrode 30; the thin film transistor T comprises a gate T1, a semiconductor layer T2, a source T3 and a drain T4, the gate T1 and the common electrode 30 are located on the first metal layer 11, and the source T3 and the drain T4 are located on the second metal layer 14; the pixel electrode 20 is located on the second transparent electrode layer 16 and extends to the non-light-transmitting region P2, and the pixel electrode 20 is electrically connected to the drain electrode T4;
the first transparent electrode layer 13 includes a plurality of first electrodes 130; in a direction perpendicular to the substrate 10, the first electrodes 130 and the pixel electrodes 20 are disposed opposite to each other, and overlap the drain electrodes T4 and do not overlap the source electrodes T3.
In the manufacturing method of the display panel provided in this embodiment, the patterning sequence of the semiconductor layer T2 of the thin film transistor T and the first transparent electrode layer 13 may be adjusted according to actual situations, and this embodiment does not specifically limit this. The first transparent electrode layer 13 and the second transparent electrode layer 16 are patterned by a wet etching method, and the first insulating layer 12 and the second insulating layer 15 are patterned by a dry etching method, so that the first insulating layer 12 is not affected when the second insulating layer 15 is patterned, and the manufacturing precision of the display panel film layer and the qualification rate of the display panel are improved.
It should be noted that, in the manufacturing process of the display panel, the film layer structure in the display panel is mainly formed through an etching process, and it can be understood that the etching process adopted in the patterning in the manufacturing method of the display panel may be a wet etching process (i.e., a wet etching method) or a dry etching process (i.e., a dry etching method). When a wet etching method is adopted, different etching solutions can be selected according to different materials and the like of each film layer formed in the display panel; when the dry etching method is used, different etching gases can be selected for different materials of the respective film layers formed in the display panel.
In some alternative embodiments, the method for manufacturing a display panel of the present invention further includes forming the reflective metal 40 on a side of the pixel electrode 20 close to the substrate 10, or forming the reflective metal 40 on a side of the pixel electrode 20 away from the substrate 10.
In this embodiment, referring to fig. 18, when the film layer of the reflective metal 40 is formed on the side of the pixel electrode 20 close to the substrate 10, the film layer of the reflective metal 40 needs to be formed on the second insulating layer 15 first, and then the second transparent electrode layer 16 or other film layers are formed after the reflective metal 40 is patterned. The display panel manufactured by the manufacturing method of the present embodiment may be a reflective display panel or a transflective display panel due to the reflective metal 40, which is not particularly limited in the present embodiment.
When patterning the film layer where the reflective metals 40 are located, it should be ensured that the distance between the reflective metals 40 is not too small, otherwise, a short circuit phenomenon is easily generated between the reflective metals 40, which affects the normal display of the display panel.
Optionally, the reflective metal 40 covers the surface of the pixel electrode 20. Specifically, the reflective metal 40 may be covered on a surface of the pixel electrode 20 close to the substrate 10, or may be covered on a surface of the pixel electrode 20 far from the substrate 10, which is not particularly limited in this embodiment.
In this embodiment, as shown in fig. 18, when the reflective metal 40 covers the surface of the pixel electrode 20 close to the substrate 10, the film layer where the reflective metal 40 is located needs to be formed on the second insulating layer 15, the reflective metal 40 is patterned to form the second transparent electrode layer 16, and finally the second transparent electrode layer 16 is patterned to form the pixel electrode 20. Since there is no insulating layer between the reflective metal 40 and the pixel electrode 20, but the reflective metal 40 is in direct contact with the pixel electrode 20, in this case, when forming the second insulating layer 15 and the film layer where the reflective metal 40 is located, the via hole 19 corresponding to each pixel electrode 20 needs to be patterned, so that the pixel electrode 20 can be electrically connected to the drain electrode T4 of the thin film transistor T when patterning the second transparent electrode layer 16.
Optionally, the method for manufacturing a display panel of the present invention further includes forming a third insulating layer 17 between the reflective metal 40 and the pixel electrode 20, and electrically connecting the reflective metal 40 and the pixel electrode 20.
Referring to fig. 19, the present embodiment will be described by taking the reflective metal 40 formed on the side of the pixel electrode 20 close to the substrate 10 as an example. The third insulating layer 17 is formed to separate the film layer where the reflective metal 40 is located from the second transparent electrode layer 16 where the pixel electrode 20 is located, so that mutual influence between the film layer where the reflective metal 40 is located and the second transparent electrode layer 16 in the patterning process of the etching process is prevented, and the manufacturing precision of the film layer of the display panel is improved.
In order to ensure the consistency of the electric potential, the reflective metal 40 still needs to be electrically connected to the pixel electrode 20, in this case, when the second insulating layer 15 and the third insulating layer 17 are formed, the via hole 19 may be patterned to be formed, respectively, so that when the film layer where the reflective metal 40 is located and the second transparent electrode layer 16 are formed, the pixel electrode 20 and the drain electrode T4 may be electrically connected by electrically connecting the reflective metal 40 and the drain electrode T4 of the thin film transistor T.
Alternatively, as shown in fig. 7 and fig. 20 to fig. 22, the reflective metal 40 includes an opening 401 and a non-opening 402; in a direction perpendicular to the display panel 10, the opening portion 401 and the light transmitting region P1 overlap, and the drain electrode T4 extends to the periphery of the opening portion 401; the second insulating layer 15 includes an insulating opening 150, the insulating opening 150 and the opening portion 401 are disposed opposite to each other, and the pixel electrode 20 is electrically connected to the first electrode 130 through the opening portion 401 and the insulating opening 150.
In this embodiment, in the process of patterning the second insulating layer 15 by using the dry etching process to form the insulating opening 150, since the first electrode 130 is already formed on the first insulating layer 12, the first insulating layer 12 is not affected, the precision of the transflective step difference is effectively ensured, and the optical stability of the display panel is improved.
The pixel electrode 20 is electrically connected to the first electrode 130 through the opening portion 401 and the insulating opening 150, so that the pixel electrode 20 directly contacts the first electrode 130. However, since the distance between the drain T4 of the tft T and the pixel electrode 20 is relatively large, in order to avoid a retardation phenomenon when an electrical signal is transmitted from the drain T4 to the pixel electrode 20 through the extension 18 or the first electrode 130, the drain T4 still needs to be electrically connected to the pixel electrode 20 to ensure uniformity of display of the display panel. In this case, when the film layers of the second insulating layer 15 and the reflective metal 40 are patterned to form the insulating opening 150 and the opening portion 401, respectively, it is also necessary to pattern the via hole 19, so that the pixel electrode 20 and the drain electrode T4 can be electrically connected through the via hole 19 when the second transparent electrode layer 16 is formed.
Alternatively, as shown in fig. 7 and 22, the common electrode 30 may surround the opening 402 in a direction perpendicular to the base substrate 10.
In this embodiment, the common electrode 30 semi-surrounds the opening 401, that is, the common electrode 30 does not overlap the opening 401 in a direction perpendicular to the substrate 10, so that the common electrode 30 does not affect the light transmittance of the display panel.
Since the common electrode 30, the scan line G, the gate T1 and the common electrode 30 are all located on the first metal layer 11, the common electrode 30 and other structures on the same film layer as the common electrode can be etched together when patterning the first metal layer 11. The semi-surrounding form of the common electrode 30 may be various, and the present embodiment does not specifically limit this.
The invention also provides a display device which comprises the display panel provided by the invention.
Referring to fig. 23, a display device 200 of the present embodiment includes the display panel 100 according to any one of the above embodiments of the present invention. Fig. 23 illustrates the display device 200 by taking a mobile phone as an example, but it should be understood that the display device 200 provided in the embodiment of the present invention may be other display devices having a display function, such as a computer, a television, a watch, and a vehicle-mounted display, and the present invention does not specifically show this. The display device provided in the embodiment of the present invention has the beneficial effects of the display panel provided in the embodiment of the present invention, and specific reference may be made to the specific description of the display panel in each of the above embodiments, which is not repeated herein.
As can be seen from the above embodiments, the display panel, the manufacturing method of the display panel, and the display device provided by the present invention at least achieve the following advantages:
1. the first transparent electrode layer is arranged between the first insulating layer and the second metal layer, so that the first transparent electrode layer and the second metal layer can have the same potential, the potential can be provided for the first transparent electrode layer without additionally adding wiring, and the potential of other film layers can not be influenced;
2. the first transparent electrode layer can be patterned by adopting an etching process different from that of the insulating layer, and when the second insulating layer is patterned, the first electrode covers the first insulating layer, so that the first insulating layer is not affected, and the manufacturing precision of the display panel film layer and the qualification rate of the display panel are improved;
3. the first transparent electrode layer and the semiconductor layer of the thin film transistor can be directly formed on the first insulating layer, and although one etching step is added, the whole thickness of the display panel is not affected, and the display device is light and thin.
4. The first electrode is closer to the common electrode than the pixel electrode, and the first electrode and the pixel electrode are at the same potential, and a larger storage capacitor is formed between the first electrode and the common electrode, so that the display stability is maintained.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (9)
1. A display panel, comprising:
the display device comprises a substrate base plate, a first metal layer, a first transparent electrode layer, a second metal layer and a second transparent electrode layer, wherein the first metal layer, the first transparent electrode layer, the second metal layer and the second transparent electrode layer are sequentially arranged on the substrate base plate;
a first insulating layer is arranged between the first metal layer and the first transparent electrode layer, and a second insulating layer is arranged between the second metal layer and the second transparent electrode layer;
the first metal layer comprises a plurality of scanning lines extending along a first direction, the second metal layer comprises a plurality of data lines extending along a second direction, and a plurality of pixel regions are defined by the intersection of the plurality of scanning lines and the plurality of data lines;
the pixel region comprises a light-transmitting region and a non-light-transmitting region, the light-transmitting region comprises a pixel electrode, and the non-light-transmitting region comprises a thin film transistor and a common electrode; the thin film transistor comprises a grid electrode, a semiconductor layer, a source electrode and a drain electrode, wherein the grid electrode and the common electrode are positioned on the first metal layer, and the source electrode and the drain electrode are positioned on the second metal layer; the pixel electrode is positioned on the second transparent electrode layer and extends to the non-light-transmitting area, and the pixel electrode is electrically connected with the drain electrode;
the first transparent electrode layer comprises a plurality of first electrodes; in the direction perpendicular to the substrate base plate, the first electrodes and the pixel electrodes are arranged in a one-to-one opposite mode, and are overlapped with the drain electrodes and not overlapped with the source electrodes;
one side of the pixel electrode close to the substrate is provided with a reflective metal;
the reflective metal includes an opening and a non-opening;
in the direction vertical to the substrate base plate, the opening part and the light-transmitting area are overlapped, and the drain electrode extends to the periphery of the opening part;
the second insulating layer includes an insulating opening, the insulating opening and the opening portion are disposed opposite to each other, and the pixel electrode is electrically connected to the first electrode through the opening portion and the insulating opening.
2. The display panel according to claim 1,
the reflective metal covers a surface of the pixel electrode.
3. The display panel according to claim 1,
and a third insulating layer is arranged between the reflective metal and the pixel electrode, and the reflective metal is electrically connected with the pixel electrode.
4. The display panel according to claim 1,
the common electrode semi-surrounds the opening in a direction perpendicular to the substrate base plate.
5. A method of manufacturing a display panel, comprising:
providing a substrate base plate;
sequentially forming a first metal layer, a first insulating layer, a first transparent electrode layer, a second metal layer, a second insulating layer and a second transparent electrode layer on the substrate base plate;
the first metal layer comprises a plurality of scanning lines extending along a first direction, the second metal layer comprises a plurality of data lines extending along a second direction, and a plurality of pixel regions are defined by the intersection of the plurality of scanning lines and the plurality of data lines;
the pixel region comprises a light-transmitting region and a non-light-transmitting region, the light-transmitting region comprises a pixel electrode, and the non-light-transmitting region comprises a thin film transistor and a common electrode; the thin film transistor comprises a grid electrode, a semiconductor layer, a source electrode and a drain electrode, wherein the grid electrode and the common electrode are positioned on the first metal layer, and the source electrode and the drain electrode are positioned on the second metal layer; the pixel electrode is positioned on the second transparent electrode layer and extends to the non-light-transmitting area, and the pixel electrode is electrically connected with the drain electrode;
the first transparent electrode layer comprises a plurality of first electrodes; wherein, in the direction perpendicular to the substrate, the first electrodes and the pixel electrodes are arranged in one-to-one opposition, and overlap with the drain electrodes and do not overlap with the source electrodes
Forming a reflective metal on one side of the pixel electrode close to the substrate;
the reflective metal includes an opening and a non-opening;
in the direction vertical to the display panel, the opening part and the light-transmitting area are overlapped, and the drain electrode extends to the periphery of the opening part;
the second insulating layer includes an insulating opening, the insulating opening and the opening portion are disposed opposite to each other, and the pixel electrode is electrically connected to the first electrode through the opening portion and the insulating opening.
6. The method for manufacturing a display panel according to claim 5,
the reflective metal covers a surface of the pixel electrode.
7. The method for manufacturing a display panel according to claim 5,
and forming a third insulating layer between the reflective metal and the pixel electrode, wherein the reflective metal is electrically connected with the pixel electrode.
8. The method for manufacturing a display panel according to claim 5,
the common electrode semi-surrounds the opening portion in a direction perpendicular to the display panel.
9. A display device characterized in that it comprises a display panel according to any one of claims 1 to 4.
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| WO2020258867A1 (en) | 2019-06-28 | 2020-12-30 | 昆山国显光电有限公司 | Display apparatus and display substrate therefor, and method for manufacturing display substrate |
| WO2021189494A1 (en) * | 2020-03-27 | 2021-09-30 | 京东方科技集团股份有限公司 | Display panel and display apparatus |
| CN112015016B (en) * | 2020-09-07 | 2022-11-22 | 厦门天马微电子有限公司 | Array substrate, manufacturing method of array substrate and display panel |
| TWI753788B (en) * | 2021-02-26 | 2022-01-21 | 友達光電股份有限公司 | Pixel structure |
| CN115421338B (en) * | 2021-04-27 | 2025-01-21 | 厦门天马微电子有限公司 | Display panel and manufacturing method thereof, and display device |
| CN113469079B (en) * | 2021-07-07 | 2024-09-13 | 上海天马微电子有限公司 | Display panel and display device |
| CN118859563A (en) * | 2023-04-26 | 2024-10-29 | 京东方科技集团股份有限公司 | Display substrate and display device |
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