CN1087129A - Apparatus for sputtering and codeposition with multiple plasma beams - Google Patents
Apparatus for sputtering and codeposition with multiple plasma beams Download PDFInfo
- Publication number
- CN1087129A CN1087129A CN 92111980 CN92111980A CN1087129A CN 1087129 A CN1087129 A CN 1087129A CN 92111980 CN92111980 CN 92111980 CN 92111980 A CN92111980 A CN 92111980A CN 1087129 A CN1087129 A CN 1087129A
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- China
- Prior art keywords
- sputtering
- microwave plasma
- plasma source
- target
- target chamber
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- Pending
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 24
- 238000004062 sedimentation Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 14
- 238000010849 ion bombardment Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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Abstract
Apparatus for sputtering and codeposition with multiple plasma beams is mainly used in plasma-deposited multicomponent film.The present invention is provided with 2-4 sputtering sedimentation microwave plasma sources and an assistant depositing microwave plasma source in target chamber.Each microwave plasma source is installed on the passage of target chamber.Drum type brake target sheet is housed in the sputtering sedimentation passage, and the target sheet passes to direct current or high-frequency sputtering voltage, and the positive ion bombardment target sheet in the plasma body that the attraction microwave plasma source produces produces the sputter effect.Contaminating impurity of the present invention is little, is easy to control the thin film composition ratio, is fit to make performance function film and Nano ultrathin film.
Description
The invention belongs to device with plasma-deposited film.
The quiet people of grade of HIT's Ishikawa comments on 72-7(1990 in Hitachi) a kind of device of multiple ion-beam reactive sputter-deposition film proposed among the 83-88; People such as the Olek Krupa Lie Dehe of U.S. University of Pennsylvania are at J.Appl.Phys 71-1(1992) 376-388 proposed same device; The inventor has proposed a kind ofly 2-4 hot filament is set in target chamber focuses on the wide beam ion source and bombard high-purity target sheet of respective number respectively in Chinese patent 88109745.7, be provided with a no filament cathode irradiate ion source irradiation substrate facing to substrate, make the device of film.
All there is weak point in these devices: hot filament negative electrode and cathode anchor and ionogenic line porous are drawn grid and are subjected to positive ion bombardment continuously and produce sputter and bring pollution for the deposit film process in the deposit film process.When long term operation is in reactant gases, more aggravated pollution level.
When adopting focusedion source, the parameter that influences the focusedion source performance is more, and filament voltage and electric current are arranged, anode voltage and electric current, screen grid voltage and current, accelerating grid electrode voltage and current etc., the repeatability and the quality of influence deposition multicomponent film.
The objective of the invention is provides a kind of and can solve the pollution that ion source itself brings in order to overcome above defective, reduces the device of varying parameter to the influence of deposit film repeatability.
The object of the present invention is achieved like this: in the target chamber of device, 2-4 microwave plasma source is set as sputtering source, they with the substrate be central distribution around substrate, face toward substrate and be provided with a microwave plasma source as the assistant depositing source.
Fig. 1 is the apparatus for sputtering and codeposition with multiple plasma beams structure principle chart.
Below in conjunction with accompanying drawing in detail concrete structure of the present invention and embodiment are described in detail.
Express the present invention includes target chamber [1] among Fig. 1, vacuum system that links to each other with target chamber [2] and airing system [3], target chamber is made with stainless steel.Vacuum system can make and reach base vacuum 10 in the target chamber
-3-10
-7Pa; Working vacuum 10
-2-10
-3Pa, airing system can be sent into sputter gas or reactant gases in the target chamber by microwave plasma source [6], [7], be provided with plate washer [8] before the rotation target holder [5] of putting substrate [4], substrate are housed in the target chamber, during the system film plate washer removed substrate and be connected to grid bias power supply [13].
The present invention installs 2-4 sputtering sedimentation plasma source [7] in target chamber, be connected to grid bias power supply [13] with an assistant depositing microwave plasma source [6] substrate facing to substrate [4], can adopt direct current or high frequency electric source, preferably adopt horizontal magnetic bottle electron cyclotron resonace microwave plasma source (inventor proposes) from the adjustable assistant depositing microwave plasma source of 0-1KV Chinese patent 90105790.8, they are installed in respectively on the passage [9] of target chamber [1], passage [9] is that a cylinder of quartz glass sputtering sedimentation plasma source is equipped with sputtering target sheet [10] in the sputtering sedimentation passage, general with drum type brake rectangular target sheet, also can adopt two or four rectangular target sheets to be placed directly in the passage target sheet material and can use metal, between semi-conductor or isolator sputtering sedimentation passage [9] and the microwave plasma source [6], be provided with metering hole sheet [11], be used for reducing the pollution of sputtering particle the quartzy ionization of microwave plasma source chamber.The metering hole sheet is made with required deposition material or silica glass.Target sheet [10] the place ahead also is provided with plate washer [8], and shielding power supply [12] is connected on the target sheet [10], passes to direct current or high-frequency sputtering voltage, attracts the positive ion bombardment target sheet in the microwave plasma, produces the sputter effect, and shielding power supply is adjustable from 0-4KV.Generally when splash-proofing sputtering metal or semi-conductor target, use dc sputtering power, use the high-frequency sputtering power supply during sputter insulation target.
The present invention compared with prior art has remarkable result:
Adopt microwave plasma source to carry out irradiation and sputter-deposited thin films, greatly reduced contaminating impurity, can deposit high performance thin film at cleaning ambient.
The parameter predigesting that influences thin film deposition is the working vacuum degree, and three of microwave power and sputtering voltages are particularly conducive to accurate each component proportions of control multicomponent film, improves the quality of film.
Can be 10
-2-10
-3Work in the Pa vacuum, be particularly suitable for making various multicomponent function films and nanometer (10
-9) ultrathin membrane.
Claims (2)
1, apparatus for sputtering and codeposition with multiple plasma beams, include target chamber [1], vacuum system that links to each other with target chamber [2] and airing system [3], be provided with the rotation target holder [5] of putting substrate [4] in the target chamber, be provided with plate washer [8] before the substrate, it is characterized in that 2-4 sputtering sedimentation microwave plasma source [7] is housed on the target chamber [1], with the substrate be central distribution around it, be provided with a microwave plasma source [6] that is used for assistant depositing facing to substrate.
2, deposition apparatus as claimed in claim 1, it is characterized in that microwave plasma source [6] [7] is installed on the passage [9] of target chamber [1], sputtering sedimentation microwave plasma source [7] is equipped with drum type brake target sheet [10] in sputtering sedimentation passage [9], be provided with metering hole sheet [11] between sputtering sedimentation passage [9] and the sputtering sedimentation microwave plasma source [7].
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92111980 CN1087129A (en) | 1992-11-16 | 1992-11-16 | Apparatus for sputtering and codeposition with multiple plasma beams |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92111980 CN1087129A (en) | 1992-11-16 | 1992-11-16 | Apparatus for sputtering and codeposition with multiple plasma beams |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1087129A true CN1087129A (en) | 1994-05-25 |
Family
ID=4945673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92111980 Pending CN1087129A (en) | 1992-11-16 | 1992-11-16 | Apparatus for sputtering and codeposition with multiple plasma beams |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1087129A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102388680A (en) * | 2009-02-05 | 2012-03-21 | 苏舍美特科公司 | Plasma coating equipment and method for coating or treating substrate surfaces |
| CN104131259A (en) * | 2014-06-17 | 2014-11-05 | 北京大学深圳研究生院 | Metal ion source and vacuum coating system |
| CN106319462A (en) * | 2015-07-01 | 2017-01-11 | 亚威科股份有限公司 | Apparatus and method for depositing a conductive oxide layer |
| CN108281618A (en) * | 2017-12-19 | 2018-07-13 | 成都亦道科技合伙企业（有限合伙） | A method of preparing metal oxide cathode |
| CN110327475A (en) * | 2019-07-25 | 2019-10-15 | 山东大学齐鲁医院 | A kind of device and method of solid material bactericidal |
-
1992
- 1992-11-16 CN CN 92111980 patent/CN1087129A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102388680A (en) * | 2009-02-05 | 2012-03-21 | 苏舍美特科公司 | Plasma coating equipment and method for coating or treating substrate surfaces |
| CN102388680B (en) * | 2009-02-05 | 2015-07-08 | 苏舍美特科公司 | Plasma coating equipment and method for coating or treating substrate surfaces |
| CN104131259A (en) * | 2014-06-17 | 2014-11-05 | 北京大学深圳研究生院 | Metal ion source and vacuum coating system |
| CN104131259B (en) * | 2014-06-17 | 2016-09-28 | 北京大学深圳研究生院 | A kind of metal ion source and vacuum coating system |
| CN106319462A (en) * | 2015-07-01 | 2017-01-11 | 亚威科股份有限公司 | Apparatus and method for depositing a conductive oxide layer |
| CN106319462B (en) * | 2015-07-01 | 2018-12-18 | 亚威科股份有限公司 | The precipitation equipment and method of conductive oxide layer |
| CN108281618A (en) * | 2017-12-19 | 2018-07-13 | 成都亦道科技合伙企业（有限合伙） | A method of preparing metal oxide cathode |
| CN110327475A (en) * | 2019-07-25 | 2019-10-15 | 山东大学齐鲁医院 | A kind of device and method of solid material bactericidal |
| CN110327475B (en) * | 2019-07-25 | 2021-06-04 | 山东大学齐鲁医院 | A kind of device and method for sterilization and bacteriostasis of solid material |
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Legal Events
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |