CN108565211B - Composite single crystal thin film - Google Patents
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- CN108565211B CN108565211B CN201810646430.9A CN201810646430A CN108565211B CN 108565211 B CN108565211 B CN 108565211B CN 201810646430 A CN201810646430 A CN 201810646430A CN 108565211 B CN108565211 B CN 108565211B
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Abstract
Provided is a composite single crystal thin film, which may include the following seven-layer structure: a substrate; a first transition layer located on the substrate; the first isolation layer is positioned on the first transition layer; the second transition layer is positioned on the first isolation layer; a first thin film layer positioned on the second transition layer; the third transition layer is positioned on the first film layer; and a second thin film layer on the third transition layer, wherein the first, second and third transition layers may include H and Ar.
Description
Technical Field
The invention relates to a composite monocrystalline film.
Background
The lithium niobate and lithium tantalate monocrystal film has excellent nonlinear optical characteristic, electrooptical characteristic, acousto-optic characteristic, and may be used widely in optical signal processing, information storage, etc. Silicon materials are the most widely used materials in the semiconductor industry today due to their excellent electrical properties. But the application of the silicon material in the photoelectric field is limited due to the lack of the optical performance of the silicon material.
Disclosure of Invention
In order to solve the above technical problems in the prior art, an object of the present invention is to provide a composite single crystal thin film combining advantages of a lithium niobate or lithium tantalate single crystal thin film and a silicon material, which can obtain a device having excellent performance by simultaneously utilizing optical characteristics of the lithium niobate or lithium tantalate single crystal thin film and electrical characteristics of the silicon single crystal thin film. The composite monocrystalline film can realize stable and effective industrial production and has very wide application prospect.
According to the present invention, there is provided a composite single crystal thin film, which may include the following seven-layer structure: a substrate; a first transition layer located on the substrate; the first isolation layer is positioned on the first transition layer; the second transition layer is positioned on the first isolation layer; a first thin film layer positioned on the second transition layer; the third transition layer is positioned on the first film layer; and a second thin film layer on the third transition layer, wherein the first, second and third transition layers may include H and Ar.
According to an embodiment of the present invention, the composite single crystal thin film may further include a second isolation layer between the first thin film layer and the second thin film layer, and the first isolation layer and the second isolation layer may each be a silicon oxide layer or a silicon nitride layer, and may each have a thickness of 0.005 μm to 4 μm.
According to an embodiment of the present invention, the concentration of H in the first, second and third transition layers may be 1×10 19 to 1×10 22 atoms/cc, and the concentration of Ar in the first, second and third transition layers may be 1×10 20 to 1×10 23 atoms/cc.
According to an embodiment of the present invention, the concentration of H in the second transition layer may be higher than the concentrations of H in the first isolation layer and the first thin film layer, respectively, and the concentration of H in the third transition layer may be higher than the concentrations of H in the first thin film layer and the second thin film layer, respectively.
According to an embodiment of the present invention, the thickness of the first transition layer may be 0.5nm to 15nm, the thickness of the second transition layer may be 0.5nm to 10nm, and the thickness of the third transition layer may be 0.5nm to 15nm.
According to an embodiment of the invention, the third transition layer may comprise a first sub-transition layer adjacent to the first thin film layer and a second sub-transition layer adjacent to the second thin film layer. In the first sub-transition layer, the concentration of the element of the first thin film layer may be higher than the concentration of the element of the second thin film layer, and the concentration of the element of the first thin film layer may gradually decrease from the first sub-transition layer to the second sub-transition layer. In the second sub-transition layer, the concentration of the element of the second thin film layer may be higher than the concentration of the element of the first thin film layer, and the concentration of the element of the second thin film layer may gradually decrease from the second sub-transition layer to the first sub-transition layer.
According to an embodiment of the present invention, the first thin film layer and the second thin film layer may each be a single crystal thin film having a thickness of nano-scale, and the thickness thereof may be 10nm to 2000nm.
According to an embodiment of the present invention, the first thin film layer may be a lithium niobate single crystal thin film or a lithium tantalate single crystal thin film, and the second thin film layer may be a silicon single crystal thin film.
According to an embodiment of the present invention, the third transition layer may include: si is distributed over the entire third transition layer, and the concentration of Si gradually decreases from the silicon single crystal thin film layer to the lithium niobate single crystal thin film or the lithium tantalate single crystal thin film layer; ta or Nb does not spread over the entire third transition layer, and the concentration of Ta or Nb gradually decreases from the lithium niobate single crystal thin film or lithium tantalate single crystal thin film layer to the silicon single crystal thin film layer.
According to an embodiment of the present invention, the substrate may be a silicon substrate, a lithium niobate substrate, or a lithium tantalate substrate, and the thickness of the substrate may be 0.1mm to 1mm.
Drawings
These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
fig. 1 is a schematic view showing the structure of a composite single crystal thin film according to an embodiment of the present invention;
FIG. 2 is a Transmission Electron Microscope (TEM) image showing a composite single crystal thin film according to an embodiment of the invention;
Fig. 3 is an enlarged view of the area a shown in fig. 2;
FIG. 4 is an elemental distribution diagram of region A shown in FIG. 2;
Fig. 5 is an enlarged view of the area B shown in fig. 2;
FIG. 6 is an elemental distribution diagram of region B shown in FIG. 2;
fig. 7 is an enlarged view of the region C shown in fig. 2;
FIG. 8 is an elemental distribution diagram of region C shown in FIG. 2; and
Fig. 9 is a Secondary Ion Mass Spectrum (SIMS) diagram showing the region a and the region B shown in fig. 2.
Detailed Description
Embodiments of the present invention will now be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of embodiments of the invention to those skilled in the art. In the following detailed description, numerous specific details are set forth by way of examples in order to provide a thorough understanding of the relevant teachings. However, it will be apparent to one skilled in the art that the present teachings may be practiced without such details. In other instances, well-known methods, procedures, and components have been described at a relatively high-level, without detail, in order to avoid unnecessarily obscuring aspects of the present teachings. Like reference numerals in the drawings denote like elements, and a description thereof will not be repeated. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.
The present invention will now be described more fully hereinafter with reference to the accompanying drawings.
Fig. 1 is a schematic view showing the structure of a composite single crystal thin film according to an embodiment of the present invention.
Referring to fig. 1, a composite single crystal thin film according to an embodiment of the present invention may include: a substrate 110; a first transition layer 115 on the substrate 110; a first isolation layer 120 on the first transition layer 115; a second transition layer 125 on the first isolation layer 120; a first thin film layer 130 on the second transition layer 125; a third transition layer 135 on the first thin film layer 130; and a second thin film layer 140 on the third transition layer 135.
According to an embodiment of the present invention, the composite single crystal thin film may be prepared as a wafer, and the diameter thereof may be 2 to 12 inches.
According to an embodiment of the present invention, the substrate 110 of the composite single crystal thin film may mainly serve as a support. The substrate 110 may be a silicon substrate, a lithium niobate substrate, or a lithium tantalate substrate according to an embodiment of the present invention, but the present invention is not limited thereto and may be made of other suitable materials. Further, the thickness of the substrate 110 according to an embodiment of the present invention may be 0.1mm to 1mm. Preferably, the thickness of the substrate 110 may be 0.1mm to 0.2mm, 0.3mm to 0.5mm, or 0.2mm to 0.5mm.
According to an embodiment of the present invention, the first isolation layer 120 of the composite single crystal thin film is used to separate the substrate 110 from the first thin film layer 130. Since the substrate 110 such as silicon has a refractive index greater than that of the lithium niobate single crystal film or lithium tantalate single crystal film and both materials have a refractive index greater than that of silicon dioxide or silicon nitride, the first isolation layer 120 may be made of silicon dioxide or silicon nitride to separate the lithium niobate single crystal film or lithium tantalate single crystal film from the substrate, thereby preventing the light field of the lithium niobate single crystal film or lithium tantalate single crystal film from being erroneously coupled into the substrate 110. According to an embodiment of the present invention, the first isolation layer 120 may be made of a material (e.g., silicon dioxide or silicon nitride) having a refractive index smaller than that of the substrate 110 and the first thin film layer 130, but the present invention is not limited thereto. According to an embodiment of the present invention, the thickness of the first isolation layer 120 may be 0.005 μm to 4 μm, preferably 100nm to 2 μm.
According to another embodiment of the present invention, the composite single crystal thin film may further include a second isolation layer (not shown) between the first thin film layer 130 and the second thin film layer 140, the second isolation layer may be a silicon oxide layer or a silicon nitride layer, and the thickness of the second isolation layer may be 0.005 μm to 4 μm, preferably 100nm to 2 μm, but the present invention is not limited thereto. The second isolation layer not only plays an optical isolation role on the first thin film layer 130 and the second thin film layer 140, but also can prevent the mutual diffusion of the elements of the first thin film layer 130 and the elements of the second thin film layer 140, prevent the first thin film layer 130 and the second thin film layer 140 from being polluted by impurities, and ensure the quality of the first thin film layer 130 and the second thin film layer 140, thereby ensuring that the characteristics of the first thin film layer 130 and the second thin film layer 140 are not affected.
According to an embodiment of the present invention, the first and second isolation layers 120 and 140 may be formed on the substrate 110 and the first or second thin film layers 130 and 140, respectively, by methods such as deposition and oxidation, but the present invention is not limited thereto.
According to an embodiment of the present invention, the composite single crystal thin film includes a first thin film layer 130 and a second thin film layer 140 having different materials, the first thin film layer 130 may be a lithium niobate single crystal thin film or a lithium tantalate single crystal thin film having excellent optical properties, and the second thin film layer 140 may be a silicon single crystal thin film having excellent electrical properties. The first thin film layer 130 and the second thin film layer 140 may each have a nano-scale thickness of 10nm to 2000nm. Preferably, the thickness of the first and second thin film layers 130 and 140 may be 10 to 200nm, 300 to 900nm, or 1000 to 1500nm. In addition, the upper surface of the second film layer 140 may be a polished surface or a roughened surface having a roughness on the order of micrometers or sub-micrometers.
According to an embodiment of the present invention, the first isolation layer 120 and the first thin film layer 130 and the second thin film layer 140 may be bonded together by a plasma bonding method, but the present invention is not limited thereto.
According to an embodiment of the present invention, the composite single crystal thin film may include three transition layers, and each transition layer has its own characteristics.
According to an embodiment of the present invention, as shown in fig. 1, the first transition layer 115 may be located between the substrate 110 and the first isolation layer 120, and may have a thickness of 0.5nm to 15nm.
According to an embodiment of the present invention, the first transition layer 115 may include inherent elements in the substrate 110 and the first isolation layer 120. In the first transition layer 115, the concentration of the element of the substrate 110 may gradually decrease from the substrate 110 toward the first isolation layer 120, and the concentration of the element of the first isolation layer 120 may gradually decrease from the first isolation layer 120 toward the substrate 110.
According to an embodiment of the present invention, the second transition layer 125 may be located between the first isolation layer 120 and the first thin film layer 130, and may have a thickness of 0.5nm to 10nm.
According to an embodiment of the present invention, the second transition layer 125 may include inherent elements in the first isolation layer 120 and the first thin film layer 130. In the second transition layer 125, the concentration of the element of the first isolation layer 120 may gradually decrease from the first isolation layer 120 toward the first thin film layer 130, and the concentration of the element of the first thin film layer 130 may gradually decrease from the first thin film layer 130 toward the first isolation layer 120.
According to an embodiment of the present invention, the third transition layer 135 may be located between the first thin film layer 130 and the second thin film layer 140, and may have a thickness of 0.5nm to 15nm.
In addition, according to an embodiment of the present invention, the third transition layer 135 may include a first sub-transition layer 135a adjacent to the first thin film layer 130 and a second sub-transition layer 135b adjacent to the second thin film layer 140. The thickness of the first sub-transition layer 135a may be 0 to 5nm and the thickness of the second sub-transition layer 135b may be 0 to 10nm, but embodiments of the present invention are not limited thereto. For example, the thicknesses of the first and second sub-transition layers 135a and 135b may vary with subsequent process temperature (e.g., annealing temperature).
According to an embodiment of the present invention, the first sub-transition layer 135a mainly includes elements inherent in the first thin film layer 130, and in the first sub-transition layer 135a, the concentration of the elements of the first thin film layer 130 may gradually decrease from the first thin film layer 130 toward the second thin film layer 140. The second sub-transition layer 135b mainly includes an intrinsic element in the second thin film layer 140, and in the second sub-transition layer 135b, the concentration of the element of the second thin film layer 140 may gradually decrease from the second thin film layer 140 toward the first thin film layer 130.
In addition, according to an embodiment of the present invention, when the first thin film layer 130 is a lithium niobate single crystal thin film or a lithium tantalate single crystal thin film, and the second thin film layer 140 is a silicon single crystal thin film, the third transition layer 135 may include Si element and Ta element or Nb element. In this case, the Si element may be distributed throughout the third transition layer 135, that is, the Si element may be distributed throughout the first and second sub-transition layers 135a and 135b, and the concentration of the Si element may gradually decrease from the second thin film layer 140 toward the first thin film layer 130. The Ta element or Nb element may not be present throughout the entire third transition layer 135, for example, the Ta element or Nb element is present only in the sub-transition layer adjacent to the first thin film layer 130 (first sub-transition layer 135 a), or a small amount of the Ta element or Nb element is present in a portion of the sub-transition layer adjacent to the second thin film layer 140 (second sub-transition layer 135 b) near the first thin film layer 130 in thickness, and the concentration of the Ta element or Nb element gradually decreases from the first thin film layer 130 toward the second thin film layer 140. However, embodiments of the present invention are not limited thereto.
According to an embodiment of the present invention, the first, second and third transition layers 115, 125 and 135 further include H element and Ar element. The Ar element in the second transition layer 125 and the third transition layer 135 originates from plasma used in plasma bonding the first isolation layer 120 and the first thin film layer 130 or the first thin film layer 130 and the second thin film layer 140, and the Ar element in the first transition layer 115 originates from diffusion of the Ar element in the second transition layer 125 and the third transition layer 135. The reason why the second transition layer 125 and the third transition layer 135 have a higher concentration of H element is that: when the plasma is used to treat the surface of the first isolation layer 120, the first thin film layer 130 or the second thin film layer 140, the bombardment of the plasma on the surface changes the surface condition, so that a large number of active groups are formed on the surface, and the surface has higher activity. Therefore, when exposed to air after the plasma treatment, a large amount of water molecules in the air are adsorbed, and thus, after the first insulating layer 120 is bonded to the first thin film layer 130 or the first thin film layer 130 is bonded to the second thin film layer 140, there is a higher concentration of H element at their bonding interface. In addition, the H element in the first transition layer 115 is derived from the diffusion of the H element in the second transition layer 125 and the third transition layer 135. In this case, a higher concentration of H element in the second and third transition layers 125 and 135 may form hydrogen bonds, thereby promoting bonding to enhance a bonding force of a bonding interface between the first isolation layer 120 and the first thin film layer 130 or a bonding interface between the first thin film layer 130 and the second thin film layer 140.
According to the embodiment of the present invention, in the first transition layer 115, the concentrations of Ar element and H element gradually decrease from the maximum concentrations thereof in the directions toward the substrate 110 and the first isolation layer 120, respectively, because: the lattice constant of the material surface is generally slightly larger than the lattice constant of the material interior, that is, the density of the material surface is less than the density of the material interior, at the interface between the substrate 110 and the first spacer layer 120 (i.e., the first transition layer 115) having a different material, the density is less than the substrate 110 and the first spacer layer 120 interior, that is, at the first transition layer 115, there are more voids to accommodate the impurity atoms, and therefore the elemental concentration within the transition layer H, ar will be higher than the substrate 110 and the first spacer layer 120 interior. In the second transition layer 125, the concentrations of Ar element and H element gradually decrease from their maximum concentrations in the directions toward the first barrier layer 120 and the first thin film layer 130, respectively, and in the third transition layer 135, the concentrations of Ar element and H element gradually decrease from their maximum concentrations in the directions toward the first thin film layer 130 and the second thin film layer 140, respectively. In the first, second and third transition layers 115, 125 and 135, the concentration of the H element may be 1×10 19 to 1×10 22 atoms/cc, the concentration of the Ar element is 1×10 20 to 1×10 23 atoms/cc, and preferably the concentration of the Ar element is 1×10 20 to 1×10 22 atoms/cc, 1×10 21 to 1×10 22 atoms/cc, and 1×10 22 to 1×10 23 atoms/cc.
The composite single crystal thin film according to the embodiment of the present invention has the first transition layer 115, the second transition layer 125, and the third transition layer 135, and can disperse stress between single crystal thin films, and the dispersion of stress can reduce defects of the single crystal thin film, improve quality of the single crystal thin film, and thus play a role in reducing transmission loss. In addition, the surfaces of the first transition layer 115, the second transition layer 125 and the third transition layer 135 are relatively flat, and the flat surfaces can reduce scattering of signals during propagation and reduce transmission loss.
The following examples illustrate the invention in more detail. However, these examples should not be construed in any way as limiting the scope of the invention.
Production of composite monocrystalline film
Example 1: silicon substrate/SiO 2 layer/lithium niobate single crystal film/silicon single crystal film composite single crystal film
A single crystal silicon substrate wafer having a size of 3 inches, a thickness of 0.4mm and a smooth surface was prepared, and after cleaning the silicon substrate, a silicon dioxide layer having a thickness of 2 μm was formed on the smooth surface of the single crystal silicon substrate wafer by a thermal oxidation method.
A lithium niobate wafer having a size of 3 inches was prepared, and helium ions (He +) were implanted into the lithium niobate wafer by ion implantation at 200KeV and a dose of 4×10 16ions/cm2. And forming the lithium niobate wafer with a three-layer structure of the film layer, the separation layer and the residual material layer.
Bonding the film layer of the ion-implanted lithium niobate wafer with the silicon dioxide layer of the silicon substrate by adopting a plasma bonding method to form a bonded body; and then placing the bonding body into heating equipment to carry out heat preservation at 350 ℃ until the residual material layer is separated from the bonding body to form the lithium niobate single crystal film. And then polishing and thinning the lithium niobate single crystal film to 400nm to obtain the lithium niobate single crystal film with nano-scale thickness.
A single crystal silicon wafer having a size of 3 inches was prepared, and hydrogen ions (H +) were implanted into the wafer by ion implantation at 40KeV at a dose of 6 x 10 16ions/cm2. And forming a silicon wafer with a three-layer structure of a film layer, a separation layer and a residual material layer.
And bonding the film layer of the ion-implanted silicon wafer with the obtained lithium niobate monocrystal Bao Mojing by adopting a plasma bonding method to obtain another bonding body. Then placing the bonding body into heating equipment to carry out heat preservation at 400 ℃ until a film layer of the silicon single crystal film wafer is separated from the bonding body to form a composite structure with a top layer of the silicon single crystal film, and then placing the obtained composite structure into an oven to carry out heat preservation at 500 ℃ so as to eliminate injection damage; and finally polishing the silicon monocrystalline film, and thinning the silicon monocrystalline film to 220nm to obtain a composite monocrystalline film product with a double-layer nanoscale thickness film.
Example 2: silicon substrate/SiO 2 layer/lithium niobate single crystal film/SiO 2 layer/silicon single crystal film composite single crystal film
A single crystal silicon wafer having a size of 3 inches, a thickness of 0.4mm and a smooth surface was prepared as a substrate, and after the substrate wafer was cleaned, a silicon dioxide layer having a thickness of 2.5 μm was formed on the smooth surface of the substrate wafer by a thermal oxidation method.
A lithium niobate wafer having a size of 3 inches was prepared, and helium ions (He 2+) were implanted into the lithium niobate wafer by ion implantation at an implantation energy of 200KeV at a dose of 4×10 16ions/cm2. And forming the lithium niobate wafer with a three-layer structure of the film layer, the separation layer and the residual material layer.
And bonding the film layer of the ion-implanted lithium niobate wafer with the silicon dioxide layer of the silicon substrate by adopting a plasma bonding method to form a bonded body. And then placing the bonding body into heating equipment to perform heat preservation and heating at 350 ℃ until the residual material layer is separated from the bonding body to form the lithium niobate single crystal film. And polishing the lithium niobate single crystal film, and thinning to 300nm to obtain the bonding body of the lithium niobate single crystal film with nano-scale thickness.
A single crystal silicon wafer having a size of 3 inches was prepared, the surface of which was covered with a layer of SiO 2 having a thickness of 50nm, and hydrogen ions (H +) were implanted into the SiO 2 -covered silicon wafer by ion implantation at an implantation energy of 40KeV and a dose of 6×10 16ions/cm2, to form a silicon wafer having a three-layer structure of a thin film layer, a separation layer, and a residual material layer.
Bonding the film layer of the silicon wafer after ion implantation with the obtained lithium niobate monocrystal film by adopting a plasma bonding method to obtain another bonding body; then the bonding body is placed into heating equipment to be heated at the temperature of 400 ℃ until the residual material layer of the silicon wafer is separated from the bonding body to form a composite structure with the top layer being a silicon single crystal film, and then the obtained composite structure is placed into an oven to be heated at the temperature of 600 ℃ so as to eliminate injection damage. And finally polishing the silicon monocrystalline film, and thinning the silicon monocrystalline film to 220nm to obtain a composite monocrystalline film product with a double-layer nanoscale thickness film.
Example 3: silicon substrate/SiO 2 layer/lithium tantalate single crystal film/silicon single crystal film composite single crystal film
A single crystal silicon substrate wafer having a size of 3 inches and a thickness of 0.4mm and having a smooth surface was prepared, and after the substrate wafer was cleaned, a silicon dioxide layer having a thickness of 600nm was formed on the smooth surface of the substrate wafer by oxidation by a thermal oxidation method.
A single crystal Bao Mojing round of lithium tantalate having a size of 3 inches was prepared, and helium ions (He +) were implanted into a lithium tantalate wafer at an implantation energy of 200KeV and a dose of 4×10 16ions/cm2 by ion implantation. And forming the lithium tantalate wafer with a three-layer structure of the film layer, the separation layer and the residual material layer.
Bonding the film layer of the ion-implanted lithium tantalate wafer with the silicon dioxide layer of the silicon substrate wafer by adopting a plasma bonding method to form a bonded body; and then placing the bonding body into heating equipment to perform heat preservation at 350 ℃ until the residual material layer is separated from the bonding body to form the lithium tantalate monocrystal film. And polishing and thinning the lithium tantalate single crystal film to 400nm to obtain the bonding body of the lithium tantalate single crystal film with nano-scale thickness.
A single crystal silicon wafer having a size of 3 inches was prepared, and hydrogen ions (H +) were implanted into the wafer by ion implantation at 80KeV at a dose of 6 x 10 16ions/cm2. And forming a silicon wafer with a three-layer structure of a film layer, a separation layer and a residual material layer.
Bonding the film layer of the silicon wafer and the obtained lithium tantalate monocrystal film by adopting a plasma bonding method to obtain another bonding body; then placing the bonding body into heating equipment to perform heat preservation at 400 ℃ until the residual material layer of the silicon wafer is separated from the bonding body to form a composite structure with the top layer being a silicon single crystal film, and then placing the obtained composite structure into an oven to perform heat preservation at 500 ℃ so as to eliminate injection damage; and finally polishing the silicon single crystal film, and thinning to 500nm to obtain a composite single crystal film product with a double-layer nano-scale thickness film.
Example 4: lithium tantalate substrate/SiO 2 layer/lithium tantalate single crystal film/silicon single crystal film composite single crystal film
Preparing a lithium tantalate substrate wafer with a size of 3 inches, a thickness of 0.4mm and a smooth surface, cleaning the substrate wafer, depositing a silicon dioxide layer with a thickness of 1.0 mu m on the smooth surface of the substrate wafer by adopting a deposition method, and annealing the substrate wafer deposited with the silicon dioxide layer; the silicon dioxide layer is then polished to a target thickness of 600nm.
Lithium tantalate wafers having a size of 3 inches were prepared, and helium ions (He 2+) were implanted into the lithium tantalate wafers using an ion implantation method at 400KeV and at a dose of 4 x 10 16ions/cm2. And forming the lithium tantalate wafer with a three-layer structure of the film layer, the separation layer and the residual material layer.
Bonding the film layer of the ion-implanted lithium tantalate wafer with the silicon dioxide layer of the silicon substrate wafer deposited with the silicon dioxide layer by adopting a plasma bonding method to form a bonded body; and then placing the bonding body into heating equipment to perform heat preservation at 350 ℃ until the residual material layer is separated from the bonding body to form the lithium tantalate monocrystal film. And polishing and thinning the lithium tantalate single crystal film to 800nm to obtain the lithium tantalate single crystal film with nano-scale thickness.
A single crystal silicon wafer having a size of 3 inches was prepared, and hydrogen ions (H +) were implanted into the wafer by ion implantation at 80KeV at a dose of 6 x 10 16ions/cm2. And forming a silicon wafer with a three-layer structure of a film layer, a separation layer and a residual material layer.
Bonding the film layer of the silicon wafer after ion implantation with the obtained lithium tantalate monocrystal film by adopting a plasma bonding method to obtain another bonding body; then placing the bonding body into heating equipment to carry out heat preservation at 400 ℃ until the residual material layer of the silicon wafer is separated from the bonding body to form a composite structure with the top layer being a silicon single crystal film, and finally polishing and thinning the silicon single crystal film to 500nm to obtain a composite single crystal film product with a double-layer nanoscale thickness film; finally, the composite monocrystalline film product is put into an oven for heat preservation at 500 ℃ so as to eliminate injection damage.
Fig. 2 is a Transmission Electron Microscope (TEM) image showing a composite single crystal thin film according to example 1 of the present invention.
Referring to fig. 2, the substrate 110 of the composite single crystal thin film according to an embodiment of the present invention is a silicon substrate, the first isolation layer 120 is a silicon oxide layer, the first thin film layer 130 is a lithium niobate single crystal thin film, and the second thin film layer 140 is a silicon single crystal thin film. As can be seen in fig. 2, the composite single crystal thin film according to an embodiment of the present invention includes a first transition layer 115 between the substrate 110 and the first isolation layer 120, a second transition layer 125 between the first isolation layer 120 and the first thin film layer 130, and a third transition layer 135 between the first thin film layer 130 and the second thin film layer 140. According to the embodiment of the invention, the bonding interface in the composite monocrystalline film is clear and the boundary is relatively flat, so that the interface loss on sound waves and light waves can be greatly reduced, and the performance of the device is improved.
Fig. 3 is an enlarged view of the area a shown in fig. 2, and fig. 4 is an element distribution diagram of the area a shown in fig. 2.
Referring to fig. 3, the region a between the first thin film layer 130 and the second thin film layer 140 of the composite single crystal thin film includes four layers having a clear interface, i.e., the first thin film layer 130, the third transition layer 135 including the first sub-transition layer 135a and the second sub-transition layer 135b, and the second thin film layer 140. The first sub-transition layer 135a is adjacent to the first thin film layer 130, and the second sub-transition layer 135b is adjacent to the second thin film layer 140 and is located on the first sub-transition layer 135 a. The thickness of the first and second sub-transition layers 135a and 135b is related to the annealing temperature of the composite single crystal thin film.
Referring to fig. 4, in the interface region a between the first thin film layer 130 and the second thin film layer 140 of the composite single crystal thin film, in the case where the first thin film layer 130 is a lithium niobate single crystal thin film and the second thin film layer 140 is a silicon single crystal thin film, the Si element has the highest concentration value in the second thin film layer 140, and the concentration of the Si element gradually increases from the first thin film layer 130 toward the second thin film layer 140, and the Si element extends over the entire third transition layer 135. The Nb element and O element have the highest concentration in the first thin film layer 130, the concentration of Nb element and O element gradually increases from the second thin film layer 140 toward the first thin film layer 130, and the Nb element does not extend over the entire third transition layer 135. In addition, a small amount of Ar element is present in the third transition layer 135.
Fig. 5 and 7 are enlarged views of the region B and the region C shown in fig. 2, respectively, and fig. 6 and 8 are element distribution diagrams of the region B and the region C shown in fig. 2, respectively.
Referring to fig. 5 and 7, there are transition layers having a very thin thickness and having a clear and flat interface between the first isolation layer 120 and the first thin film layer 130 and between the substrate 110 and the first isolation layer 120, i.e., the second transition layer 125 between the first isolation layer 120 and the first thin film layer 130 and the first transition layer 115 between the substrate 110 and the first isolation layer 120.
Referring to fig. 6, in the case where the first thin film layer 130 is a lithium niobate single crystal thin film and the first isolation layer 120 is a silicon oxide layer, in the second transition layer 125 between the first isolation layer 120 and the first thin film layer 130, si element has a concentration maximum value in the first isolation layer 120, and the concentration of Si element gradually decreases from the first isolation layer 120 toward the first thin film layer 130. The Nb element has a concentration maximum in the first thin film layer 130, and the concentration of the Nb element gradually decreases from the first thin film layer 130 toward the first separation layer 120. In addition, a higher concentration of O element and a small amount of Ar element are also present in the second transition layer 125.
Referring to fig. 8, in the case where the first isolation layer 120 is a silicon oxide layer and the substrate 110 is a silicon substrate, in the first transition layer 115 between the first isolation layer 120 and the substrate 110, the O element has a concentration maximum in the first isolation layer 120, and the concentration of the O element gradually decreases from the first isolation layer 120 toward the substrate 110. The Si element has a concentration maximum in the substrate 110, and the concentration of the Si element gradually decreases from the substrate 110 toward the first isolation layer 120. In addition, a small amount of Ar element is also present in the first transition layer 115.
Fig. 9 is a Secondary Ion Mass Spectrum (SIMS) diagram showing the region a and the region B shown in fig. 2.
Referring to fig. 9, the second and third transition layers 125 and 135 contain a high concentration of H element, and the concentration of H element is 1×10 20 atoms/cc to 1×10 21 atoms/cc, and the concentration of H in the second transition layer 125 may be higher than the concentrations of H in the first separation layer 120 and the first thin film layer 130, respectively, and the concentration of H in the third transition layer 135 may be higher than the concentrations of H in the first thin film layer 130 and the second thin film layer 140, respectively. The high concentration of H element increases the bonding force of the bonding interface.
The present invention provides a composite single crystal thin film which combines excellent optical properties of lithium niobate or lithium tantalate single crystal thin film with excellent electrical properties of silicon material, thereby improving the performance of the composite single crystal thin film. In addition, the composite monocrystalline film has a transition layer with a relatively flat surface, so that stress among the monocrystalline films can be dispersed, and scattering of signals in the propagation process is reduced, so that defects of the monocrystalline film are reduced, the quality of the monocrystalline film is improved, and the effect of reducing transmission loss is achieved.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims and their equivalents. The embodiments should be considered in descriptive sense only and not for purposes of limitation. Therefore, the scope of the invention is defined not by the specific embodiments of the invention but by the claims, and all differences within the scope will be construed as being included in the present invention.
Claims (9)
1. A composite single crystal thin film, the composite single crystal thin film comprising:
A substrate;
A first transition layer located on the substrate;
the first isolation layer is positioned on the first transition layer;
the second transition layer is positioned on the first isolation layer;
A first thin film layer positioned on the second transition layer;
the third transition layer is positioned on the first film layer; and
A second film layer on the third transition layer,
Wherein the first transition layer, the second transition layer and the third transition layer comprise H and Ar,
Wherein the third transition layer comprises a first sub-transition layer adjacent to the first film layer and a second sub-transition layer adjacent to the second film layer,
Wherein the first film layer is a lithium niobate single crystal film or a lithium tantalate single crystal film, the second film layer is a silicon single crystal film,
Wherein the third transition layer comprises: si is spread over the first sub-transition layer and the second sub-transition layer; and Ta or Nb, only in the first sub-transition layer, or in the first sub-transition layer and in a portion of the second sub-transition layer near the first thin film layer,
Wherein the concentration of H in the first, second and third transition layers is from 1X 10 19 to 1X 10 22 atoms/cc.
2. The composite single crystal thin film according to claim 1, wherein the composite single crystal thin film further comprises a second barrier layer between the first thin film layer and the second thin film layer, and the first barrier layer and the second barrier layer are a silicon oxide layer or a silicon nitride layer having a thickness of 0.005 μm to 4 μm.
3. The composite single crystal film of claim 1, wherein the concentration of Ar in the first, second, and third transition layers is from 1 x 10 20 to 1 x 10 23 atoms/cc.
4. The composite single crystal thin film according to claim 1, wherein the concentration of H in the second transition layer is higher than the concentrations of H in the first isolation layer and the first thin film layer, respectively, and the concentration of H in the third transition layer is higher than the concentrations of H in the first thin film layer and the second thin film layer, respectively.
5. The composite single crystal thin film according to claim 1, wherein the thickness of the first transition layer is 0.5nm to 15nm, the thickness of the second transition layer is 0.5nm to 10nm, and the thickness of the third transition layer is 0.5nm to 15nm.
6. The composite single crystal thin film according to claim 1,
Wherein in the first sub-transition layer, the concentration of the element of the first thin film layer is higher than the concentration of the element of the second thin film layer, and the concentration of the element of the first thin film layer gradually decreases from the first sub-transition layer to the second sub-transition layer,
In the second sub-transition layer, the concentration of the element of the second thin film layer is higher than the concentration of the element of the first thin film layer, and the concentration of the element of the second thin film layer gradually decreases from the second sub-transition layer to the first sub-transition layer.
7. The composite single crystal thin film according to claim 1, wherein the first thin film layer and the second thin film layer are single crystal thin films having a thickness of 10nm to 2000nm.
8. The composite single crystal thin film according to claim 1, wherein the concentration of Si gradually decreases from the silicon single crystal thin film layer to the lithium niobate single crystal thin film or the lithium tantalate single crystal thin film layer;
The concentration of Ta or Nb gradually decreases from the lithium niobate single crystal thin film or lithium tantalate single crystal thin film layer to the silicon single crystal thin film layer.
9. The composite single crystal thin film according to claim 1 or 2, wherein the substrate is a silicon substrate, a lithium niobate substrate or a lithium tantalate substrate, and the thickness of the substrate is 0.1mm to 1mm.
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| JP2017139720A (en) * | 2016-02-02 | 2017-08-10 | 信越化学工業株式会社 | Composite substrate, and method for manufacturing composite substrate |
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