CN108203817A - PECVD reaction chambers and the support needle for PECVD reaction chambers - Google Patents

Abstract

The disclosure provides a PECVD reaction chamber and a supporting needle used in the PECVD reaction chamber, belonging to the technical field of semiconductors. The support pin used for PECVD reaction chamber includes: needle core; needle sleeve, covered outside the needle core; and at least one layer of gasket, arranged on the bottom of the needle core and the needle sleeve; wherein The part of the needle core and the pad corresponding to the needle core and the needle cover is made of conductive material, and the needle cover is made of non-conductive material. The support needle adopts conductive material in the needle core, and grounds the needle core and the gasket, so that the entire support needle is grounded, which can reduce the number of capacitors connected in series in the Pin area, increase the plasma density in the Pin area, and reduce the density of the non-Pin area in the Pin area. capacitance difference.

Description

PECVD reaction chamber and support pins for PECVD reaction chamber

technical field

The present disclosure relates to the technical field of semiconductors, in particular, to a PECVD reaction chamber and a support needle used in the PECVD reaction chamber.

Background technique

In the TFT-LCD (Thin Film Transistor Liquid Crystal Display, Thin Film Transistor Liquid Crystal Display English) industry, the support pin Lift Pin is widely used to support the glass substrate. However, due to the use of the supporting pin Pin, it is easy to cause a difference in plasma density between the Pin region and the non-Pin region, which in turn leads to a difference between the film formed in the Pin region and the film formed in the non-Pin region.

In the PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma-enhanced chemical vapor deposition) process, the reactive gas containing the constituent atoms of the film is ionized by microwave or radio frequency to form plasma locally, and the plasma chemical activity is very strong. It is easy to react to deposit the desired film on the substrate. In the Pin area, the pin cap (that is, Cap) part of the Pin is made of aluminum Al or graphite material, the supporting part of the Pin is a whole body ceramic, and the lower electrode is grounded, and the Cap of the Pin is not grounded, which causes the Pin to form a capacitance with the lower electrode, and the non- There is a difference in the capacitance of the Pin region, which causes a difference in the plasma density of the two regions. Therefore, there are also differences between the film formed in the Pin region and the film formed in the normal non-Pin region, forming mura, affecting product quality and yield, and affecting electrical characteristics, thereby affecting the display effect.

Therefore, the technical solutions in the prior art still have room for improvement.

It should be noted that the information disclosed in the above background section is only for enhancing the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to those of ordinary skill in the art.

Contents of the invention

The purpose of the present disclosure is to provide a PECVD reaction chamber and a support pin for the PECVD reaction chamber, and then at least to a certain extent overcome the limitations and defects of the related technology caused by the thin film generated by the Pin region and the normal non-Pin region The resulting film also suffers from the problem of differential formation of mura.

Other features and advantages of the present disclosure will become apparent from the following detailed description, or in part, be learned by practice of the present disclosure.

According to one aspect of the present disclosure, there is provided a support needle for use in a reaction chamber, comprising:

needle core;

a needle sheath covering the core; and

At least one layer of spacers is arranged on the bottom of the needle core and the needle cover;

Wherein the part of the needle core and the gasket corresponding to the needle core and the needle cover is made of conductive material, and the needle cover is made of non-conductive material.

In an exemplary embodiment of the present disclosure, it also includes:

The needle cap is located on the top of the needle core and the needle cover, the needle cap is located in a first accommodating groove of the base, and a a second accommodating groove through which the groove runs, for accommodating the needle core and the needle sheath, the area of the first accommodating groove is larger than the area of the second accommodating groove;

Wherein the needle cap is made of conductive material.

In an exemplary embodiment of the present disclosure, it also includes:

The roller cover is covered outside the needle cover, the roller cover is also located in the second accommodating groove, and the length of the roller cover is greater than or equal to the thickness of the base.

In an exemplary embodiment of the present disclosure, the part of the roller cover located in the second accommodating groove further includes: a plurality of rollers for changing the top surface of the needle cap relative to the base the height of the upper surface.

In an exemplary embodiment of the present disclosure, the material of the needle core, the needle cap and the gasket corresponding to the needle core and the needle shield is metal.

In an exemplary embodiment of the present disclosure, the material of the needle core, the needle cap and the gasket corresponding to the needle core and the needle shield is aluminum.

In an exemplary embodiment of the present disclosure, the needle cover is made of ceramics.

In an exemplary embodiment of the present disclosure, the needle core is grounded.

According to the second aspect of the present disclosure, there is also provided a plasma-enhanced chemical vapor deposition PECVD reaction chamber, including:

cavity;

The base is used to carry the sample and is provided with a first containing groove; and

For at least two of the above-mentioned support pins, the bottom of the support pins is fixed on the cavity through at least one layer of gaskets, and the top of the support pins is located in the first accommodating groove.

In an exemplary embodiment of the present disclosure, the supporting pin is grounded.

Some embodiments of the present disclosure provide a PECVD reaction chamber and a support needle for a PECVD reaction chamber. On the one hand, the support needle adopts a conductive material in the needle core, and grounds the needle core and the gasket, so that the entire support needle Grounding can reduce the number of capacitors connected in series in the Pin area, increase the plasma density in the Pin area, and reduce the capacitance difference between the Pin area and the non-Pin area; on the other hand, it can improve the uniformity of the plasma distribution in the reaction chamber, improve the film quality, and reduce the Mura. rate and improve product quality.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure.

Description of drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description serve to explain the principles of the disclosure. Apparently, the drawings in the following description are only some embodiments of the present disclosure, and those skilled in the art can obtain other drawings according to these drawings without creative efforts.

FIG. 1 shows a schematic diagram of a Pin structure in a related embodiment of the present disclosure.

FIG. 2 shows a schematic diagram of the series capacitance of the base in the Pin region and the non-Pin region in related embodiments of the present disclosure.

FIG. 3 shows a schematic structural view of the supporting pin used in a PECVD reaction chamber in an embodiment of the present disclosure.

FIG. 4 shows an enlarged view of part A in FIG. 3 of an embodiment of the present disclosure.

FIG. 5 shows an enlarged view of part B in FIG. 3 according to an embodiment of the present disclosure.

FIG. 6 shows a schematic diagram of the series capacitance of the base in the Pin region and the non-Pin region in an embodiment of the disclosure.

Detailed ways

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of example embodiments to those skilled in the art. The drawings are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus repeated descriptions thereof will be omitted.

Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details being omitted, or other methods, components, devices, steps, etc. may be adopted. In other instances, well-known structures, methods, devices, implementations, materials, or operations are not shown or described in detail to avoid obscuring aspects of the present disclosure.

Herein, the directional terms of "inside" and "outside" respectively refer to the side facing the liquid crystal layer and the side away from the liquid crystal layer, for example, the inner side of the base substrate refers to the layer of the base substrate facing the liquid crystal layer. In addition, orientation terms such as "upper", "lower", "left" and "right" are defined with respect to the orientations in which the display devices are schematically placed in the drawings. It should be understood that the above directional terms are relative concepts, and they are used for relative description and clarification, which may change accordingly according to the change of the orientation where the display device is placed.

In a related embodiment of the present disclosure, the PECVD process is that the upper electrode is connected to a radio frequency power supply, the lower electrode is grounded, and the reaction gas (SiH4 and NH3) is dissociated into plasma under the action of radio frequency electricity after passing through, and then reacted and deposited on the lower electrode. on the glass substrate surface. During the transfer process of the glass substrate, Pin is needed as a support to exchange the glass substrate.

FIG. 1 shows a schematic diagram of a Pin structure in a related embodiment of the present disclosure. As shown in FIG. 1 , in addition to showing the Pin structure, it also shows a partial structure of a PECVD process reaction chamber. Wherein the bottom of Pin4 is fixed on the chamber body 5 of the reaction chamber by gasket 6, the top of Pin4 (i.e. Pin Cap) supports the glass substrate (not shown in the figure) by penetrating the base 1, and Pin4 is covered with The roller cover 2 and the cavity 5 are connected to the base 1 through the connecting wire 3 . Conventional Pin is generally made of ceramic material, Pin Cap is made of Al, and the top is Anodized. Anodized is anodized, which refers to plating a layer of protective oxide on the metal surface by electrolysis, that is, the top of Pin Cap is aluminum oxide.

Figure 2 shows a schematic diagram of the base in the related embodiments of the present disclosure in the Pin area and the non-Pin area series capacitance diagram, wherein the Pin area (ie at S1) is a part of the base where the Pin can protrude, that is, it can support Starting from the area of the glass substrate on the base, the non-Pin area (that is, S2) is the area on the base except the Pin area. As shown in Figure 2, the non-Pin area can be regarded as three series-connected capacitors of Glass glass substrate 7, Anodized anodized oxide 9, and Susceptor base 1 (grounded); while the Pin area can be regarded as Glass glass substrate 7, Anodized anode Electroplated oxide 8 (namely Pin Coating), PinCap41 on the top of Pin4, Anodized anodized oxide 9 (namely Susceptor Coating), Susceptor base 1 (ground) and five capacitors are connected in series. If there are more capacitors connected in series, the plasma density in this region will be lower. It can be seen from Figure 2 that the non-Pin region includes three capacitors connected in series, and the Pin region includes five capacitors connected in series. Therefore, the plasma density in the non-Pin region The bulk density is greater than the plasma density in the Pin region. The difference in plasma density during the film forming process will cause the difference in film quality. Therefore, there is a difference between the film quality of the Pin area and the non-Pin area, and the macroscopic performance is Pin Mura, which affects product quality and yield, and affects the electrical characteristics at the same time. affect the display effect.

Based on the above problems, the present disclosure provides an improvement on the structure of the Pin, and provides a new Lift Pin applied to a PECVD reaction chamber to reduce the occurrence rate of Pin Mura.

The present disclosure provides a support pin, which can be used in a plasma-enhanced chemical vapor deposition PECVD reaction chamber.

Fig. 3 shows the schematic structural view of the supporting needle used in the PECVD reaction chamber in the embodiment of the present disclosure. In addition to the needle core 41, at least one layer of gasket 6 is provided on the bottom of the needle core 41 and the needle sheath 42, and the bottom of the needle core 41 and the needle sheath 42 are fixed in the cavity 5 of the reaction chamber by at least one layer of gasket 6 Above; the part of the needle core 41, the needle cap 43 and the gasket 6 corresponding to the needle core 41 and the needle sheath 42 is made of conductive material, and the needle sheath 42 is made of non-conductive material. If the needle core 41 is grounded, since the needle core 41, the needle cap 43 and the part of the pad 6 corresponding to the needle core 41 and the needle sleeve 42 are conductive materials, and the three are in contact, that is, the needle cap 43, the needle core 21 and the pad 6. The parts corresponding to the needle core 41 and the needle sheath 42 are both grounded.

The support needle structure improves the traditional Pin structure by adding a needle core made of conductive material inside the Pin, and grounding the Pin to increase the plasma density in the Pin area and reduce the difference in plasma density between the Pin area and the non-Pin area. , so that the plasma distribution in the reaction chamber is uniform, the film quality is optimized, and the occurrence probability of Pin Mura is reduced.

Fig. 4 shows an enlarged view of part A in Fig. 3 of the embodiment of the present disclosure. As shown in Fig. 4, it shows the positional relationship between the needle cap 43, the needle core 41, the needle case 42 and the base 1, specifically:

The needle cap 43 is located on the top of the needle core 41 and the needle sheath 42, the needle cap 43 is located in a first accommodating groove W1 of the base 1, and the base 1 is also provided with a hole penetrating the first accommodating groove W1. The second accommodating groove W2 is used to accommodate the needle core 41 and the needle sheath 42. The area of the first accommodating groove W1 is larger than that of the second accommodating groove W2, and the cross-sectional area of the needle cap 43 is also larger than that of the needle sheath 42 and the needle sheath 42. The cross-sectional area of the needle core 41.

In addition, as shown in FIG. 4, in FIG. 4, it also includes: a roller cover T, which is covered outside the needle cover 42, and the roller cover T is also located in the second accommodating groove W2, and the length of the roller cover T is greater than or equal to the base 1 thickness.

In this embodiment, the roller cover T covering the needle cover 42 can protect the supporting needle to a certain extent. In addition, the part of the roller cover T located in the second accommodating groove W2 also includes: a plurality of rollers X, and the plurality of rollers X are in contact with the needle cover 42, and are used to change the position of the top surface of the needle cover 43 relative to the base 1. the height of the upper surface.

In addition, the needle sheath 42 in this embodiment is made of ceramics, which is smoother than metal, which is conducive to the up and down movement of the base 1, and the existence of the ceramic shell can avoid the softening of the metal of the middle needle core 41 under high temperature. Lead to the occurrence of the problem that the support pin is connected with the roller sleeve T as a whole.

In Figure 3, four rollers are taken as an example. Through the driving of the rollers, the upper and lower positional relationship between the support needle and the base can be changed, specifically:

When there is a sample (taking the glass substrate as an example) on the base, and the glass substrate is depositing a film layer by the PECVD process, the top surface of the needle cap 43 in the support pin is on the same level as the upper surface of the base 1; After the PECVD process of the glass substrate is completed, when the glass substrate needs to be moved out of the reaction chamber, the contact friction between the roller X and the needle sleeve 42 drives the vertical positional relationship between the support needle and the base 1 to change, usually the base 1 can be lowered, so that The top surface of the needle cap 43 of the support pin is higher than the upper surface of the base 1, that is, the support pin protrudes from the base 1, so that the support pin can support the glass substrate and move the glass substrate to a specified position according to the process requirements. Location.

Fig. 5 shows an enlarged view of part B in Fig. 3 of the embodiment of the present disclosure. As shown in Fig. 5, it shows the positional relationship between the needle core 41 and the needle sleeve 42, the cavity 5 and the gasket 6, specifically:

The part of gasket 6 corresponding to needle core 41 and needle sheath 42 (ie, gasket 61 ) is made of the same material as needle core 41 , that is, it is also a conductive material, while the other parts of gasket 6 are ceramics, that is, still a non-conductive material. The structure of the gasket 6 shown in FIG. 1 is a ceramic gasket as a whole. The needle core 41 in the support needle shown in FIG. 5 is made of conductive material, and the bottom is in contact with the cavity through the gasket 61 to complete the grounding.

In this embodiment, the needle core 41 , the needle cap 43 and the spacer 61 are made of metal to achieve conduction and grounding. Specifically, the needle core 41 , the needle cap 43 and the spacer 61 can be made of aluminum.

In addition, as shown in Figure 3, the cavity 5 is connected to the base 1 through a wire, specifically, the wire can be a ground wire, so as to achieve the purpose of reducing the number of capacitors, specifically:

Fig. 6 shows a schematic diagram of the base in the embodiment of the present disclosure in which the pin area and the non-Pin area are connected in series. In the area of the glass substrate on the base, the non-Pin area (ie, S2) is the area on the base except the Pin area. As shown in Figure 6, the non-Pin area can be regarded as three series-connected capacitors of Glass glass substrate 7, Anodized anodized oxide 9, and Susceptor base 1 (grounded); while the Pin area can be regarded as Glass glass substrate 7, Anodized anode Electroplated oxide 8 (ie, Pin Coating), and the top Pin Cap of Pin4 (ie, pin cap 43 ) (grounding) are three capacitors connected in series.

Based on the above, compared with the support pin shown in FIG. 1 , the number of capacitors connected in series in the Pin area is reduced by using the support pin provided in this embodiment, which can reduce the capacitance difference between the Pin area and the non-Pin area.

To sum up, the support pin used in the PECVD reaction chamber provided by the embodiment of the present disclosure, on the one hand, the support pin adopts a conductive material in the needle core, and grounds the needle core and the gasket, so that the entire support pin is grounded, It can reduce the number of capacitors connected in series in the Pin area, increase the plasma density in the Pin area, and reduce the capacitance difference between the Pin area and the non-Pin area; on the other hand, it can improve the uniformity of plasma distribution in the reaction chamber, improve the film quality, and reduce the incidence of Mura ,improve product quality.

Based on the above-mentioned embodiments, another embodiment of the present disclosure also provides a plasma-enhanced chemical vapor deposition PECVD reaction chamber, which includes: a chamber, a base, and at least two support pins; wherein the base For carrying samples, a first accommodation groove is provided; the bottom of the support needle is fixed on the cavity of the reaction chamber through at least one layer of spacers, and the top of the support needle is located in the first accommodation groove of the base.

In the embodiment of the present disclosure, the support pin is grounded, and since the needle core inside the support pin is made of conductive material, the entire Pin can be grounded, which can reduce the number of capacitors connected in series in the Pin area.

To sum up, the PECVD reaction chamber provided by the embodiments of the present disclosure can achieve the same technical effect as the above-mentioned supporting pins used in the PECVD reaction chamber, which will not be repeated here.

It should be clearly understood that this disclosure describes how to make and use specific examples, but that the principles of the disclosure are not limited to any details of these examples. Rather, these principles can be applied to many other implementations based on the teachings of the present disclosure.

Exemplary embodiments of the present disclosure have been specifically shown and described above. It should be understood that the disclosure is not limited to the detailed structures, arrangements or methods of implementation described herein; on the contrary, the disclosure is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (10)

1. A support pin, used in a reaction chamber, is characterized in that, comprising: needle core; a needle sheath covering the core; and At least one layer of spacers is arranged on the bottom of the needle core and the needle cover; Wherein the part of the needle core and the gasket corresponding to the needle core and the needle cover is made of conductive material, and the needle cover is made of non-conductive material. 2. The support needle according to claim 1, further comprising: The needle cap is located on the top of the needle core and the needle cover, the needle cap is located in a first accommodating groove of the base, and a a second accommodating groove through which the groove runs, for accommodating the needle core and the needle sheath, the area of the first accommodating groove is larger than the area of the second accommodating groove; Wherein the needle cap is made of conductive material. 3. The support needle according to claim 2, further comprising: The roller cover is covered outside the needle cover, the roller cover is also located in the second accommodating groove, and the length of the roller cover is greater than or equal to the thickness of the base. 4. The supporting needle according to claim 3, characterized in that, the part of the roller cover located in the second receiving groove further comprises: a plurality of rollers for changing the relative position of the top surface of the needle cap the height of the upper surface of the base. 5 . The supporting needle according to claim 2 , wherein the needle core, the needle cap and the washer are made of metal for parts corresponding to the needle core and the needle cap. 6 . 6 . The supporting needle according to claim 3 , wherein the needle core, the needle cap and the pad corresponding to the needle core and the needle cap are made of aluminum. 7 . 7. The supporting needle according to claim 1, wherein the material of the needle sleeve is ceramic. 8. The support needle according to claim 1, wherein the needle core is grounded. 9. A plasma-enhanced chemical vapor deposition PECVD reaction chamber, characterized in that, comprising: cavity; The base is used to carry the sample and is provided with a first containing groove; and The support pin according to any one of at least two claims 1-8, the bottom of the support pin is fixed on the cavity through at least one layer of gaskets, the top of the support pin is located in the first container Put it in the slot. 10. The support pin of claim 9, wherein the support pin is grounded.