CN108203815A - Processing chamber and semiconductor processing equipment - Google Patents
Processing chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN108203815A CN108203815A CN201611180566.2A CN201611180566A CN108203815A CN 108203815 A CN108203815 A CN 108203815A CN 201611180566 A CN201611180566 A CN 201611180566A CN 108203815 A CN108203815 A CN 108203815A
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- CN
- China
- Prior art keywords
- transparent medium
- processing chamber
- medium plate
- reinforcing rib
- chamber according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 45
- 238000010438 heat treatment Methods 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 9
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The present invention provides a kind of processing chamber and semiconductor processing equipment, the roof and/or bottom wall of processing chamber are transparent medium window, and transparent medium window includes transparent medium plate and reinforcing rib；Reinforcing rib is fixed on transparent medium plate, to strengthen the intensity of transparent medium window.Processing chamber provided by the invention, it is ensured that processing chamber has stronger anti-negative pressure ability, while the processing chamber occupies little space, easy processing and maintenance.
Description
Technical field
The invention belongs to semiconductor equipment manufacturing technology fields, and in particular to a kind of processing chamber and semiconductor machining are set
It is standby.
Background technology
Chemical vapor deposition epitaxial growth is that reaction gas is delivered in chamber, and makes reaction gas by modes such as heating
Body reacts, and growth atomic deposition on substrate, grows single crystalline layer.During epitaxial growth, the main ginseng controlled is needed
Number has：Underlayer temperature, source gas flow and gas carrier flow etc..The preferable epitaxial growth equipment of quality is well-grown prerequisite
Condition.
Fig. 1 is the structure diagram of existing processing chamber, referring to Fig. 1, processing chamber includes cavity and positioned at cavity
The upper heating lamp 2 of top and the lower heating lamp 3 of lower section go up dome 10 and conduct as roof made of clear quartz material
The lower dome 11 made of clear quartz material of bottom wall, as shown in Figure 2 a, the left hand view of Fig. 2 a is upper dome 10 to upper dome 10
Vertical view, the right part of flg of Fig. 2 a is the sectional view along left hand view along A-A, and as shown in Figure 2 a, upper dome 10 employs arc
Face structure；As shown in Figure 2 b, the left hand view of Fig. 2 b is the front view of lower dome to lower dome 11, and the right part of flg of Fig. 2 b is along left hand view
In C-C along sectional view, lower dome 10 also have globoidal structure；It is additionally provided with to carry work piece in the cavity
Pedestal；Processing chamber further includes multiple upper heating lamps 2 and multiple lower heating lamps 3, multiple upper heating lamps 2 and multiple lower heating lamps 3
Respectively through upper dome 10 and the lower radiations heat energy into processing chamber of dome 11, to heat work piece, heat work piece
To technique required temperature.
However, problems with is found in practical applications：Upper dome 10 and lower dome 11 are using the effect of globoidal structure
In order to which chamber is enable to be compatible with negative pressure technique, therefore, although the anti-negative pressure ability of the reaction chamber is strong, cavity does not only take up
Space is big, difficult processing and not easy care.
Invention content
The present invention is directed at least solve one of technical problem in the prior art, it is proposed that a kind of processing chamber and half
Conductor process equipment, it is ensured that processing chamber has stronger anti-negative pressure ability, while the processing chamber occupies little space, Yi Jia
Work and maintenance.
One of in order to solve the above problem, the present invention provides a kind of processing chamber, the roof of the processing chamber and/or bottom
Wall is transparent medium window, and the transparent medium window includes transparent medium plate and reinforcing rib, and the reinforcing rib is fixed on described transparent
On dielectric-slab, to strengthen the intensity of the transparent medium plate.
Preferably, the transparent medium plate is integral formula structure, and the reinforcing rib is fixed at the transparent medium
The upper surface or lower surface of plate.
Preferably, the quantity of the reinforcing rib is multiple, and one end of multiple reinforcing ribs is each attached to transparent Jie
The central area of scutum, the other end of multiple reinforcing ribs prolong along the fringe region of different directions towards the transparent medium plate
It stretches and fixes.
Preferably, the transparent medium plate shape is round or annulus；Each reinforcing rib is along the transparent medium plate
Radial direction setting.
Preferably, multiple reinforcing ribs along the circumferentially-spaced of the transparent medium plate and are uniformly arranged.
Preferably, the transparent medium plate includes multiple sub- transparent medium plates；Multiple sub- transparent medium plates pass through institute
It states reinforcing rib fixation and is spliced to form the transparent medium window.
Preferably, the transparent medium plate shape is round or annulus.
Preferably, the reinforcing rib is made of quartz.
Preferably, the reinforcing rib and the transparent medium plate are fixed by the way of welding.
Preferably, heating unit is provided on the outside of the transparent medium window, the heating unit is dish type heating lamp；
The heating unit is located at the indoor work piece of the process cavity for controlling to heat.
Preferably, the dish type heating lamp includes the first dish type heating lamp and the second dish type heating lamp；First dish type
Heating lamp heats the central area of the work piece for controlling；The second dish type heating lamp heats the quilt for controlling
The fringe region of workpiece.
The present invention also provides a kind of semiconductor processing equipments, and including processing chamber, the processing chamber is using in the present invention
The processing chamber of offer is provided.
The invention has the advantages that：
Processing chamber provided by the invention, transparent medium window include flat transparent medium plate and reinforcing rib；Reinforcing rib
Plane setting where along transparent medium plate, and embed and be fixed in transparent medium plate or be fixed on the surface of transparent medium plate,
To strengthen the intensity of the transparent medium window this in the prior art for globoidal structure compared with, can be improved using reinforcing rib flat
The intensity of the transparent medium window of plate, thus can not only ensure that chamber has stronger anti-negative pressure ability, and flat transparent
Medium window occupies little space, easy processing, safeguards well.
Semiconductor processing equipment provided by the invention, by using the processing chamber of the above-mentioned offer of the present invention, equipment is strong
It spends, and whole equipment occupies little space, easy processing and maintenance.
Description of the drawings
Fig. 1 is the structure diagram of existing processing chamber；
Fig. 2 a are the structure diagram of upper dome in Fig. 1；
Fig. 2 b are the structure diagram of lower dome in Fig. 1；
Fig. 3 is the structure diagram of processing chamber provided in an embodiment of the present invention；
Fig. 4 a are the structure diagram of upper transparent medium window in Fig. 3；
Fig. 4 b are the structure diagram of lower transparent medium window in Fig. 3；
Fig. 5 is the structure diagram of upper heating unit or lower heating unit in Fig. 3.
Specific embodiment
For those skilled in the art is made to more fully understand technical scheme of the present invention, come below in conjunction with the accompanying drawings to the present invention
The processing chamber and semiconductor processing equipment of offer are described in detail.
Embodiment 1
Fig. 3 is the structure diagram of processing chamber provided in an embodiment of the present invention；Fig. 4 a are upper transparent medium window in Fig. 3
Structure diagram；Fig. 4 b are the structure diagram of lower transparent medium window in Fig. 3；Also referring to Fig. 3, Fig. 4 a and Fig. 4 b, this hair
The processing chamber that bright embodiment provides, the roof and bottom wall of processing chamber are transparent medium window, specifically, transparent Jie of roof
Matter window is upper transparent medium window 23, and the transparent medium window of bottom wall is lower transparent medium window 24, and transparent medium window includes transparent medium
Plate and reinforcing rib；Reinforcing rib is fixed on transparent medium plate, to strengthen the intensity of transparent medium plate, specifically, upper transparent Jie
Matter window 23 includes transparent medium plate 231 and reinforcing rib 232；Lower transparent medium window 24 includes transparent medium plate 241 and reinforcing rib
242。
Processing chamber provided in an embodiment of the present invention in the prior art for globoidal structure compared with, can be carried using reinforcing rib
The intensity of high flat transparent medium window, thus can not only ensure that chamber has stronger anti-negative pressure ability, and flat
Transparent medium window occupies little space, easy processing, safeguards well.
Preferably, reinforcing rib uses transparent material, to ensure the translucency of transparent medium window.
Specifically, transparent material includes but not limited to quartz material.
In addition, transparent medium plate can also be made of quartz material.
Furthermore it is preferred that reinforcing rib and transparent medium plate are fixed by the way of welding, this can be further improved
The intensity of bright medium window.
In the present embodiment, specifically, transparent medium plate (231 and 241) is integral formula structure, reinforcing rib (232 Hes
242) it is fixed on the upper surface or lower surface of transparent medium plate (231 and 241), in this way, saturating due to monolithic construction
The manufacturing process of bright dielectric-slab (231 and 241) is relatively easy, so that the manufacturing process of processing chamber is simple；In addition, using
This mode, reinforcing rib (232 and 242) and transparent medium plate (231 and 241) fixation procedure are relatively easy.
Preferably, as shown in Figs. 4a and 4b, the quantity of reinforcing rib (232 and 242) is multiple (being specially four), Duo Gesuo
The one end for stating reinforcing rib (232 and 242) is each attached to the central area of transparent medium plate (231 and 241), multiple reinforcing ribs
The fringe region of the other end along different directions towards the transparent medium plate (231 and 241) extend and fix, reinforcing rib uses
Such fixed form can ensure the intensity in entire transparent medium plate all directions, so as to preferably improve transparent medium
The intensity of window.
It is further preferred that as shown in Figs. 4a and 4b, multiple reinforcing ribs (232 and 242) are along transparent medium plate (231 Hes
241) it circumferentially-spaced and is uniformly arranged, in this way so that the intensity in transparent medium window circumferential direction is more uniform, so as to improve
The integral strength and reliability of bright medium window.
In addition, specifically, transparent medium plate 231 is circular configuration in Fig. 4 a, and the shape of transparent medium plate 241 is in Fig. 4 b
Annulus, in the case, each reinforcing rib (232 and 242) are set along the radial direction of transparent medium plate (231 and 241), in this way, energy
The enough intensity for improving transparent medium window well.
Why the shape of transparent medium plate 241 is annulus, this is because the annular distance of the annulus is for can with other component
It is set with cooperation, specifically, the rotary shaft of pedestal rotation for driving to be made to carry work piece passes through the annular distance and position
It is connected in the driving mechanism outside processing chamber.
In the present embodiment, as shown in figure 3, being heated by the way of heat radiation positioned at the indoor work piece of process cavity,
Specifically, heating unit (20 and 21) is provided on the outside of transparent medium window (23 and 24), heating unit is dish type heating lamp；
Heating unit is located at the indoor work piece of process cavity for controlling to heat.
More specifically, being provided with heating unit 20 on the top of upper transparent medium window 23, upper heating unit 20 is for saturating
Cross transparent medium window heating work piece；Lower heating unit 21, lower heating dress are provided on the top of lower transparent medium window 24
Put 21 for through lower transparent medium window 24 heating work piece.
It is appreciated that in the case of using heating unit radiant heating, since transparent medium window is tablet in the present invention
Shape structure, therefore, this can cause the refraction action of optical signal to avoid globoidal structure in the prior art that the temperature of pedestal is uneven
Even phenomenon, so as to improve the heating uniformity of pedestal.Certainly, the present invention is not limited thereto, in practical applications, can be with
Work piece by the way of the sensing heating on heating pedestal and pedestal.
In addition, since heating unit is using plate-like heating lamp, when this with using multiple independent heating lamps in the prior art
3 or more lamp failures occur needs all to replace heating lamp and maintenance cost height, difficulty is caused to compare greatly, can not only obtain more
Good heating uniformity, but also maintenance cost and maintenance difficulties are low.
Preferably, as shown in figure 5, for Yi Shang heating unit 20, dish type heating lamp includes 201 He of the first dish type heating lamp
Second dish type heating lamp 202；Wherein, the first dish type heating lamp 201 heats the central area of work piece for control；Second disk
Shape heating lamp 202 for controlling the fringe region of heating work piece, in this manner it is achieved that the central area of work piece and
Fringe region is independently controlled heating, consequently facilitating realizing the temperature uniformity of work piece.Specifically, the first dish type adds
201 and second dish type heating lamp 202 of thermolamp is connected by electrode and power supply, control circuit etc..
It is that in the present embodiment, although transparent medium plate is integral formula structure, reinforcing rib is fixed to need described herein
It is arranged on the upper surface or lower surface of transparent medium plate；But the present invention is not limited thereto, it is in practical applications, transparent
Dielectric-slab includes multiple sub- transparent medium plates；Multiple sub- transparent medium plates are spliced to form transparent medium window by reinforcing rib fixation,
It, can be in order to prepare the transparent medium window of irregular shape using this kind of mode, and reinforcing rib can be embedded in transparent medium
In window, therefore, it is possible to preferably improve the transparent intensity by window.
Embodiment 2
The embodiment of the present invention also provides a kind of semiconductor processing equipment, and including processing chamber, the processing chamber is using this
The processing chamber that invention above-described embodiment 1 provides.
Specifically, semiconductor processing equipment includes chemical vapor depsotition equipment.
Semiconductor processing equipment provided in an embodiment of the present invention, the technique that the above embodiment of the present invention offer is used due to it
Chamber, therefore, not only equipment intensity is good, but also whole equipment occupies little space, easy processing, easy care.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (12)
1. a kind of processing chamber, which is characterized in that the roof and/or bottom wall of the processing chamber are transparent medium window, described
Bright medium window includes transparent medium plate and reinforcing rib, and the reinforcing rib is fixed on the transparent medium plate, described to strengthen
The intensity of transparent medium plate.
2. processing chamber according to claim 1, which is characterized in that the transparent medium plate is integral formula structure, institute
State upper surface or lower surface that reinforcing rib is fixed at the transparent medium plate.
3. processing chamber according to claim 2, which is characterized in that the quantity of the reinforcing rib is multiple described to be multiple
One end of reinforcing rib is each attached to the central area of the transparent medium plate, and the other ends of multiple reinforcing ribs is along different directions
Extend and fix towards the fringe region of the transparent medium plate.
4. processing chamber according to claim 3, which is characterized in that the transparent medium plate shape is round or annulus；
Each reinforcing rib is set along the radial direction of the transparent medium plate.
5. processing chamber according to claim 4, which is characterized in that multiple reinforcing ribs are along the transparent medium plate
It is circumferentially-spaced and be uniformly arranged.
6. processing chamber according to claim 1, which is characterized in that the transparent medium plate includes multiple sub- transparent mediums
Plate；
Multiple sub- transparent medium plates are spliced to form the transparent medium window by reinforcing rib fixation.
7. processing chamber according to claim 6, which is characterized in that the transparent medium plate shape is round or annulus.
8. processing chamber according to claim 1, which is characterized in that the reinforcing rib is made of quartz.
9. processing chamber according to claim 1, which is characterized in that the reinforcing rib and the transparent medium plate are using welding
Mode fix.
10. processing chamber according to claim 1, which is characterized in that be provided with and add on the outside of the transparent medium window
Thermal, the heating unit are dish type heating lamp；
The heating unit is located at the indoor work piece of the process cavity for controlling to heat.
11. processing chamber according to claim 10, which is characterized in that the dish type heating lamp is heated including the first dish type
Lamp and the second dish type heating lamp；
The first dish type heating lamp heats the central area of the work piece for controlling；
The second dish type heating lamp heats the fringe region of the work piece for controlling.
12. a kind of semiconductor processing equipment, including processing chamber, which is characterized in that the processing chamber uses claim 1-
Processing chamber described in 11 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611180566.2A CN108203815A (en) | 2016-12-19 | 2016-12-19 | Processing chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611180566.2A CN108203815A (en) | 2016-12-19 | 2016-12-19 | Processing chamber and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108203815A true CN108203815A (en) | 2018-06-26 |
Family
ID=62603057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611180566.2A Withdrawn CN108203815A (en) | 2016-12-19 | 2016-12-19 | Processing chamber and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108203815A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501098A (en) * | 2020-04-13 | 2020-08-07 | 北京北方华创微电子装备有限公司 | Reaction chamber in semiconductor epitaxial equipment and semiconductor epitaxial equipment |
| WO2025112934A1 (en) * | 2023-11-28 | 2025-06-05 | 北京北方华创微电子装备有限公司 | Semiconductor process apparatus and control method therefor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270396A (en) * | 2001-03-14 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Plasma processing equipment |
| CN101625961A (en) * | 2008-07-08 | 2010-01-13 | 周星工程股份有限公司 | apparatus for manufacturing semiconductor |
| CN104005005A (en) * | 2013-02-26 | 2014-08-27 | 泰拉半导体株式会社 | Batch type apparatus for processing substrate |
| JP2014216440A (en) * | 2013-04-25 | 2014-11-17 | 富士電機株式会社 | Chucking plate for semiconductor wafer process |
| CN104658946A (en) * | 2013-11-25 | 2015-05-27 | 泰拉半导体株式会社 | Cluster-batch type substrate processing system |
| CN105386009A (en) * | 2014-08-26 | 2016-03-09 | 泰拉半导体株式会社 | Reactor of substrate processing apparatus |
-
2016
- 2016-12-19 CN CN201611180566.2A patent/CN108203815A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270396A (en) * | 2001-03-14 | 2002-09-20 | Matsushita Electric Ind Co Ltd | Plasma processing equipment |
| CN101625961A (en) * | 2008-07-08 | 2010-01-13 | 周星工程股份有限公司 | apparatus for manufacturing semiconductor |
| CN104005005A (en) * | 2013-02-26 | 2014-08-27 | 泰拉半导体株式会社 | Batch type apparatus for processing substrate |
| JP2014216440A (en) * | 2013-04-25 | 2014-11-17 | 富士電機株式会社 | Chucking plate for semiconductor wafer process |
| CN104658946A (en) * | 2013-11-25 | 2015-05-27 | 泰拉半导体株式会社 | Cluster-batch type substrate processing system |
| CN105386009A (en) * | 2014-08-26 | 2016-03-09 | 泰拉半导体株式会社 | Reactor of substrate processing apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501098A (en) * | 2020-04-13 | 2020-08-07 | 北京北方华创微电子装备有限公司 | Reaction chamber in semiconductor epitaxial equipment and semiconductor epitaxial equipment |
| CN111501098B (en) * | 2020-04-13 | 2022-08-16 | 北京北方华创微电子装备有限公司 | Reaction chamber in semiconductor epitaxial equipment and semiconductor epitaxial equipment |
| WO2025112934A1 (en) * | 2023-11-28 | 2025-06-05 | 北京北方华创微电子装备有限公司 | Semiconductor process apparatus and control method therefor |
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| PB01 | Publication | ||
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Application publication date: 20180626 |