CN108172543A - The stripping means and underlay substrate of a kind of flexible substrates - Google Patents

Abstract

This application discloses the stripping means and underlay substrate of a kind of flexible substrates, this method includes：One underlay substrate is provided；Peeling layer is deposited on underlay substrate, peeling layer includes amorphous silicon film layer, wherein, the hydrogen content in amorphous silicon film layer is more than 5%；Flexible substrates are formed on peeling layer；Illumination is carried out to the underlay substrate for carrying peeling layer and flexible substrates, so that it is removed on flexible substrates underlay substrate, pass through the above method, the application causes to damage to the scuffing and laser penetration on flexible substrates surface after can preventing laser lift-off to film transistor device, so as to improve the product yield during flexible display panels carry out laser lift-off processing procedure.

Description

A method for peeling off a flexible substrate and a base substrate

technical field

The present application relates to the technical field of display manufacturing, in particular to a method for peeling off a flexible substrate and a base substrate.

Background technique

With the continuous development of flexible panel technology, more and more panel suppliers are beginning to mass-produce flexible panels. Most of the current flexible panels use colored polyimide as the base material of the flexible panel. Although it can be used for flexible display, it is still inferior to "display panels with colorless transparent flexible substrates" in terms of aesthetics, visual effects, and application range. There is a big gap. Although the "colorless transparent flexible substrate display panel" has many advantages over the "colored transparent flexible substrate display panel", in terms of ultraviolet light absorption rate, the "colorless transparent flexible substrate" is not as high as the "colored transparent flexible substrate", This makes it difficult for the "colorless transparent flexible substrate" to undergo a laser lift-off process.

Contents of the invention

The present application provides a method for stripping a flexible substrate and a substrate substrate, which can effectively prevent scratches on the surface of the flexible substrate after laser stripping and damage to thin-film transistor devices caused by laser penetration, thereby improving the flexibility of the flexible display panel during the laser stripping process. product yield.

A technical solution provided by the present application is to provide a method for peeling off a flexible substrate, the method comprising: providing a base substrate; depositing a peeling layer on the base substrate, the peeling layer comprising an amorphous silicon film layer, wherein , the hydrogen content in the amorphous silicon film layer is greater than 5%; a flexible base is formed on the release layer; the base substrate with the release layer and the flexible base is illuminated, so that the A flexible base is peeled from the backing substrate.

Another technical solution provided by the present application is to provide a base substrate, the base substrate includes a peeling layer, and the peeling layer includes an amorphous silicon film layer, wherein the hydrogen contained in the amorphous silicon film layer is The amount is greater than 5%.

The beneficial effect of the present application is to provide a method for peeling off a flexible substrate and a base substrate, by depositing a peeling layer with an amorphous silicon film layer on the base substrate, and preparing a flexible substrate on the peeling layer, and further aligning the substrate The base substrate is illuminated so that the flexible substrate is peeled off from the substrate, which effectively prevents scratches on the surface of the flexible substrate after laser peeling and damage to the thin film transistor device caused by laser penetration, thereby improving product quality during the laser peeling process of the flexible display panel. Rate.

Description of drawings

Fig. 1 is a schematic flow chart of the first embodiment of the peeling method of the flexible substrate of the present application;

Fig. 2 is a schematic flow chart of the second embodiment of the peeling method of the flexible substrate of the present application;

3 is a schematic structural view of the first embodiment of the substrate of the present application;

FIG. 4 is a schematic structural view of a second embodiment of the substrate substrate of the present application;

FIG. 5 is a schematic structural view of a third embodiment of the substrate substrate of the present application;

FIG. 6 is a schematic structural view of a fourth embodiment of the substrate of the present application;

FIG. 7 is a schematic structural diagram of a fifth embodiment of the base substrate of the present application.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Please refer to FIG. 1 , which is a schematic flow chart of the first embodiment of the peeling method of the flexible substrate of the present application. As shown in Figure 1, it specifically includes:

S11, providing a base substrate.

A base substrate 10 is provided, and the base substrate 10 is cleaned to remove organic impurity contamination on the surface of the base substrate 10 . Optionally, the base substrate 10 may be made of a transparent material, specifically a substrate of any form such as glass, a ceramic substrate, or a transparent plastic, which is not specifically limited in the present invention.

S12, depositing a peeling layer on the base substrate, the peeling layer includes an amorphous silicon film layer, wherein the hydrogen content of the amorphous silicon film layer is greater than 5%.

Optionally, refer to FIG. 2. FIG. 2 is a schematic flow chart of a second embodiment of a flexible substrate peeling method of the present application, wherein the peeling layer provided in this embodiment has good adhesion and is easy to bond with the flexible substrate 30 or Combining with other substrates, the manufacturing process is simple, and no air bubbles will be generated due to the influence of temperature in the subsequent manufacturing process, which ensures the flatness requirements of the display device in the manufacturing process. On the other hand, the peeling layer 20 is easy to peel off under the condition of light, which can realize the rapid separation of the flexible substrate and other carriers. And step S12 in this embodiment further includes the following sub-steps:

S121, sequentially depositing a silicon nitride film layer, a first silicon oxide film layer, and an amorphous silicon film layer on the base substrate.

The silicon nitride film layer 201 is deposited on the base substrate 10, specifically, it is deposited on the base substrate 10 through the plasma enhanced chemical vapor deposition method of PECVD equipment. In other embodiments, other methods can also be used for deposition. Here Without further limitation, a structure as shown in FIG. 3 is formed. FIG. 3 is a schematic structural view of the first embodiment of the substrate substrate of the present application, and then a first silicon oxide film layer 202 is deposited on the silicon nitride film layer 201, It is also deposited by plasma-enhanced chemical vapor deposition, and then the structure shown in FIG. 4 is formed. FIG. 4 is a schematic structural diagram of the second embodiment of the substrate of the present application.

Subsequently, an amorphous silicon film layer 203 (a-si) is deposited on the first silicon oxide film layer 202 . In this embodiment, the deposition of the amorphous silicon film layer 203 is also deposited by the plasma enhanced chemical vapor deposition method, and the hydrogen content in the amorphous silicon film layer 203 prepared by this method is not less than 5%, specifically 10%. %, 20%, 30%, etc., are not further limited here. Optionally, in a specific implementation manner, the thickness of the amorphous silicon film layer 203 is not less than 10 nm, specifically 10 nm, 20 nm, 30 nm and so on. Please refer to FIG. 5 . FIG. 5 is a schematic structural diagram of a third embodiment of the base substrate of the present application, which is specifically formed through this step.

S122, performing oxidation treatment on the amorphous silicon film layer to form a second silicon oxide film layer.

Specifically, the amorphous silicon film layer 203 is oxidized by ozone (O3) equipment, so that a second silicon oxide film layer 204 is formed on the surface of the amorphous silicon film layer 203, as shown in FIG. 6 . In this embodiment, the formation of the second silicon oxide film layer 204 is mainly to reduce the damage caused by the hydrogen explosion of the amorphous silicon film layer 203 when the flexible substrate is separated, that is, to protect the surface of the flexible substrate from being scratched. In this example, an amorphous silicon film layer with a high hydrogen content was prepared by plasma-enhanced chemical vapor deposition, and the surface of the amorphous silicon film layer was oxidized to form a second oxidation layer to protect the flexible substrate. Silicon film layer. In a specific embodiment, because the amorphous silicon film layer with higher hydrogen content has a higher absorption rate to ultraviolet (UV), the absorption of ultraviolet light in the subsequent stripping process with the flexible substrate will cause a hydrogen explosion phenomenon, The flexible substrate and the base substrate can be further separated by the hydrogen explosion phenomenon, and the protective effect of the second silicon oxide film layer will not cause damage to the stripped flexible substrate, which can improve the product yield in the laser lift-off process .

S13, forming a flexible base on the release layer.

Prepare a flexible substrate 30 on the release layer 20, specifically prepare a flexible substrate 30 on the second silicon oxide film layer 204 of the release layer 20, wherein the material of the flexible substrate 30 can be polyimide. In other embodiments, One of high molecular polymer materials such as polyethylene terephthalate, polystyrene, polyethylene naphthalate, polyethersulfone resin, high polymer polypropylene, and polycarbonate can also be used , without further limitation here. Please refer to FIG. 7 in detail. FIG. 7 is a schematic structural view of the flexible substrate 30 prepared on the base substrate 10 with the release layer 20 in this embodiment.

S14, irradiating the base substrate with the peeling layer and the flexible base, so that the flexible base is peeled off from the base substrate.

Because in the peeling layer 20, the hydrogen content in the amorphous silicon film layer 203 is relatively high, when the ultraviolet light is irradiated on the peeling layer 20, the amorphous silicon film layer 203 has a strong absorption rate to the ultraviolet light, and will produce Hydrogen explosion phenomenon, and due to the protective effect of the second silicon oxide film layer on the amorphous silicon film layer, the flexible substrate 30 can be peeled off from the base substrate 10 without damaging the flexible substrate 30, thereby obtaining Complete flexible substrate 30 . Wherein, when the flexible base 30 is peeled off from the base substrate 10 , the silicon oxide film layer is still covered on the surface of the flexible base 30 , which can isolate water and oxygen, effectively making up for the lack of the ability of the flexible base 30 to isolate water and oxygen.

In the above embodiment, by depositing a peeling layer with an amorphous silicon film layer on the base substrate, and preparing a flexible substrate on the peeling layer, and further irradiating the substrate to make the flexible substrate peel off from the substrate, effectively preventing The scratches on the surface of the flexible substrate after laser lift-off and the laser penetration cause damage to the thin film transistor device, thereby improving the product yield rate during the laser lift-off process of the flexible display panel.

Please refer to FIG. 6 further. FIG. 6 is a schematic structural diagram of an embodiment of the substrate of the present application. In this embodiment, the base substrate further includes a peeling layer 20 .

Wherein, the peeling layer 20 further includes: a silicon nitride film layer 201 deposited on the base substrate; a first silicon oxide film layer 202 deposited on the silicon oxide film layer 201; an amorphous silicon film layer 203 deposited on the first On the silicon oxide film layer 202 ; the second silicon oxide film layer 204 is formed on the amorphous silicon film layer 203 .

In a specific embodiment, the peeling layer is prepared by plasma-enhanced chemical vapor deposition. That is, the silicon nitride film layer 201 , the first silicon oxide film layer 202 and the amorphous silicon film layer 203 are sequentially deposited on the base substrate by plasma enhanced chemical vapor deposition. Wherein, the preparation of the second silicon oxide film layer 204 adopts ozone equipment to oxidize the amorphous silicon film layer 203 and form on its surface, which mainly protects the flexible substrate during the peeling process, preventing its Damage to flexible substrate surfaces.

Optionally, the thickness of the amorphous silicon film layer 203 formed by plasma-enhanced chemical vapor deposition method is greater than 10nm, specifically 10nm, 20nm, 30nm, etc., without further limitation here, and its hydrogen content is not less than 5 %, it can be 10%, 20%, 30% and so on.

In a specific embodiment, because the amorphous silicon film layer with higher hydrogen content has a higher absorption rate to ultraviolet (UV), the absorption of ultraviolet light in the subsequent stripping process with the flexible substrate will cause a hydrogen explosion phenomenon, The flexible substrate and the base substrate can be further separated by the hydrogen explosion phenomenon, and the protective effect of the second silicon oxide film layer will not cause damage to the stripped flexible substrate, which can improve the product yield in the laser lift-off process .

In the above-mentioned embodiments, by providing a peeling layer on the base substrate, and the peeling layer includes an amorphous silicon film layer with a high hydrogen content and a second silicon oxide film layer for protection, it is possible to improve the flexibility of the flexible display panel for laser lift-off. Product yield during the manufacturing process.

In summary, those skilled in the art can easily understand that the present application provides a method for peeling off a flexible substrate and a base substrate, by depositing a peeling layer with an amorphous silicon film layer on the base substrate, and depositing a peeling layer on the peeling layer Prepare a flexible substrate, further illuminate the substrate to make the flexible substrate peel off from the substrate, effectively prevent the scratches on the surface of the flexible substrate after laser peeling and the damage to the thin film transistor device caused by the laser penetration, thereby improving the laser performance of the flexible display panel. Product yield during lift-off process.

The above is only the implementation mode of this application, and does not limit the scope of patents of this application. Any equivalent structure or equivalent process transformation made by using the contents of this application specification and drawings, or directly or indirectly used in other related technical fields, All are included in the scope of patent protection of the present application in the same way.

Claims (10)

1. A stripping method of flexible base, is characterized in that, comprises: providing a base substrate; Depositing a release layer on the base substrate, the release layer includes an amorphous silicon film layer, wherein the hydrogen content in the amorphous silicon film layer is greater than 5%; forming a flexible substrate on the release layer; Illuminating the base substrate with the peeling layer and the flexible base, so that the flexible base is peeled off from the base substrate. 2. The method according to claim 1, wherein the depositing the peeling layer on the base substrate specifically comprises: Depositing a silicon nitride film layer, a first silicon oxide film layer, and an amorphous silicon film layer sequentially on the base substrate; The amorphous silicon film layer is oxidized to form a second silicon oxide film layer. 3. The method according to claim 1, wherein the base substrate with the peeling layer and the flexible substrate is illuminated so that the flexible substrate is removed from the substrate substrate. Stripping includes: The substrate with the substrate is irradiated with ultraviolet light, so that the amorphous silicon layer in the peeling layer undergoes hydrogen explosion to peel off the flexible substrate. 4. The method according to any one of claims 1 to 3, characterized in that, the preparation of the peeling layer adopts a plasma-enhanced chemical vapor deposition method. 5. The method according to any one of claims 1 to 3, characterized in that the thickness of the amorphous silicon film layer is greater than 10 nm. 6. The method according to claim 2, wherein ozone equipment is used for the oxidation treatment of the amorphous silicon film layer. 7. A base substrate, characterized in that the base substrate includes a peeling layer, and the peeling layer includes an amorphous silicon film layer, wherein the hydrogen content in the amorphous silicon film layer is greater than 5%. 8. The base substrate according to claim 7, wherein the release layer comprises: a silicon nitride film layer deposited on the base substrate; a first silicon oxide film layer deposited on the silicon oxide film layer; an amorphous silicon film layer deposited on the silicon oxide film layer; The second silicon oxide film layer is formed on the amorphous silicon film layer. 9. The base substrate according to claim 7, wherein the thickness of the amorphous silicon film layer is greater than 10 nm. 10 . The base substrate according to claim 7 , wherein the peeling layer is prepared by a plasma-enhanced chemical vapor deposition method. 11 .