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CN108165938B - Preparation method of hetero-junctions photochemistry array and products thereof and application - Google Patents

Preparation method of hetero-junctions photochemistry array and products thereof and application Download PDF

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CN108165938B
CN108165938B CN201711383553.XA CN201711383553A CN108165938B CN 108165938 B CN108165938 B CN 108165938B CN 201711383553 A CN201711383553 A CN 201711383553A CN 108165938 B CN108165938 B CN 108165938B
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film
array
photochemistry
junctions
hetero
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CN108165938A (en
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何丹农
尹桂林
卢静
金彩虹
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Shanghai National Engineering Research Center for Nanotechnology Co Ltd
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Abstract

The present invention provides preparation method of a kind of hetero-junctions photochemistry array and products thereof and application, prepares one layer of Ti film using magnetron sputtering cosputtering in FTO substrate of glass, obtains TiO using electrochemical etching method2Nano-pipe array thin film carries out corona treatment in a hydrogen atmosphere, and prepares one layer of MoS in nanotube surface using atomic layer deposition on this basis2Nano thin-film.A kind of preparation method of hetero-junctions photochemistry array provided by the invention has the use of the technology of high repeatability by magnetron sputtering, electrochemical corrosion, plasma treatment and atomic layer deposition etc., it is ensured that the repetition stability of prepared array.Preparation method of the present invention is controllable, and preferably, products obtained therefrom has wide spectrum absorption characteristics to repeatability, greatly improves the utilization efficiency of sunlight.

Description

Preparation method of hetero-junctions photochemistry array and products thereof and application
Technical field
The invention belongs to photochemistry fields, and in particular to a kind of hetero-junctions (TiO2/MoS2) photochemistry array preparation method And products thereof and application it is different.
Background technique
Nowadays, with the development of economy, industrialization degree is higher and higher, enjoy they to life offer convenience it is same When, problem of environmental pollution is also at the unavoidable problem of people.
TiO2Have the characteristics that excellent physicochemical properties are stablized, be widely used in dye-sensitized solar cells and The fields such as photolysis water hydrogen.But pure TiO2Photoelectrochemical behaviour is due to its wide band gap (visible absorption is weaker), big electricity The disadvantages of sub- hole-recombination rate and low active site, limit its performance.And MoS2It (is can absorb visible with narrow band gap Light) the advantages that, with TiO2Good complementarity can be formed.TiO2/MoS2Composite material is because be provided simultaneously with TiO2And MoS2It is unique Physicochemical properties, band gap can be effectively reduced, there are synergistic effects, therefore show in photochemistry field huge potential Value, receives researcher and widely favors.Such as document " MoS2Modify TiO2Nano-tube array photoelectrochemical behaviour research " (Journal of Inorganic Materials, 2016,31 (11): 1237-1241) are substrate using Ti piece, prepare TiO by anodic oxidation2It receives Then mitron array prepares nano flower-like structure MoS in nanotube surface using hydro-thermal method2, significantly improve the photochemical of material Learn performance.
Summary of the invention
In order to overcome the deficiencies of the prior art, it is an object of that present invention to provide a kind of preparation sides of hetero-junctions photochemistry array Method, to mention the TiO of arch large area, high repeatability2/MoS2Heterojunction array.
Another object of the present invention is: providing a kind of hetero-junctions photochemistry array product of above method preparation.
Another object of the present invention is to: a kind of application of the said goods is provided.
The object of the invention is realized by following proposal: a kind of preparation method of hetero-junctions photochemistry array, in FTO glass base Bottom prepares one layer of Ti film using magnetron sputtering cosputtering, obtains TiO using electrochemical etching method2Nano-pipe array thin film, Corona treatment is carried out to the film, and prepares one layer of MoS in nanotube surface2Nano thin-film comprising the steps of:
(1) one layer of Ti film is prepared using magnetron sputtering cosputtering in FTO substrate of glass；
(2) TiO is obtained using electrochemical etching method2Nano-pipe array thin film；
(3) in a hydrogen atmosphere, plasma treatment is carried out to above-mentioned film；
(4) one layer of MoS is grown in nanotube surface using atomic layer deposition2Nano thin-film.
Wherein, Ti film thickness described in step (1) is 500-800nm.
Plasma treatment described in step (3), refers under vacuum, is passed through hydrogen atmosphere, carries out plasma to film Processing, plasma power 20W, processing time are 3-5 minutes.
MoS2 nano film thickness described in step (4) is 2-8nm.
The present invention provides a kind of hetero-junctions photochemistry array product, is prepared according to any of the above-described the method.
The present invention provides a kind of application of hetero-junctions photochemistry array product in the utilization efficiency for promoting sunlight.
A kind of preparation method of hetero-junctions photochemistry array provided by the invention, by magnetron sputtering, electrochemical corrosion, etc. Ion processing and atomic layer deposition etc. have the use of the technology of high repeatability, it is ensured that the repetition of prepared array is steady It is qualitative.Meanwhile the present invention utilizes plasma treatment, increases TiO2The active site of nanotube surface, atomic layer deposition can In TiO2Nanotube surface uniform deposition MoS2Nano thin-layer greatly improves the area of hetero-junctions, than with the methods of hydro-thermal method into Row MoS2Modification, modification efficiency has and is obviously improved.Preparation method of the present invention has preferably repeatability, and products obtained therefrom has width Spectral absorption feature greatly improves the utilization efficiency of sunlight.
Detailed description of the invention
Fig. 1 is the SEM figure of hetero-junctions photochemistry array prepared by embodiment 1；
Fig. 2 is the current density performance map of hetero-junctions photochemistry array prepared by embodiment 1.
Specific embodiment
Embodiment 1
A kind of preparation method of hetero-junctions photochemistry array product:
(1) one layer of 500nmTi film is prepared using magnetron sputtering cosputtering in FTO substrate of glass；
(2) TiO is obtained using electrochemical etching method2Nano-pipe array thin film；
(3) in a hydrogen atmosphere, plasma treatment is carried out to above-mentioned film, processing power 20w is handled the time 4 minutes；
(4) one layer of 5nm thickness nanometer MoS is grown in nanotube surface using atomic layer deposition2Film.Fig. 1 is prepared The SEM of hetero-junctions photochemistry array schemes.
As electrochemical working electrode, under solar simulator environment, current density test is carried out, light source light energy is close Degree is maintained at 100mW/cm2, Fig. 2 is shown in the current density performance map of prepared hetero-junctions photochemistry array.
Embodiment 2
A kind of preparation method of hetero-junctions photochemistry array product:
(1) one layer of 600nmTi film is prepared using magnetron sputtering cosputtering in FTO substrate of glass；
(2) TiO is obtained using electrochemical etching method2Nano-pipe array thin film；
(3) in a hydrogen atmosphere, plasma treatment is carried out to above-mentioned film, processing power 20w is handled the time 3 minutes；
(4) one layer of 2nm thickness nanometer MoS is grown in nanotube surface using atomic layer deposition2Film.
Embodiment 3
A kind of preparation method of hetero-junctions photochemistry array product
(1) one layer of 800nmTi film is prepared using magnetron sputtering cosputtering in FTO substrate of glass；
(2) TiO is obtained using electrochemical etching method2Nano-pipe array thin film；
(3) in a hydrogen atmosphere, plasma treatment is carried out to above-mentioned film, processing power 20w is handled the time 5 minutes；
(4) one layer of 8nm thickness nanometer MoS is grown in nanotube surface using atomic layer deposition2Film.
The various embodiments described above sample under solar simulator environment, carries out current density as electrochemical working electrode Test, light source optical energy density are maintained at 100mW/cm2。
The present invention provides a kind of TiO2/MoS2Heterojunction array, can large area preparation, function admirable is reproducible.

Claims (3)

1. a kind of preparation method of hetero-junctions photochemistry array, which is characterized in that splashed altogether in FTO substrate of glass using magnetron sputtering One layer of Ti film of preparation is penetrated, obtains TiO using electrochemical etching method2Nano-pipe array thin film carries out plasma to the film Body processing, and one layer of MoS is prepared in nanotube surface2Nano thin-film comprising the steps of:
(1) one layer of Ti film is prepared using magnetron sputtering cosputtering in FTO substrate of glass；
(2) TiO is obtained using electrochemical etching method2Nano-pipe array thin film；
(3) in a hydrogen atmosphere, plasma treatment is carried out to above-mentioned film；
(4) one layer of MoS is grown in nanotube surface using atomic layer deposition2Nano thin-film；
Ti film thickness described in step (1) is 500-800nm；
Plasma treatment described in step (3), refers under vacuum, is passed through hydrogen atmosphere, carries out corona treatment to film, Plasma power is 20W, and the processing time is 3-5 minutes；
MoS described in step (4)2Nano film thickness is 2-8nm.
2. a kind of hetero-junctions photochemistry array, it is characterised in that be prepared method according to claim 1.
3. a kind of application of hetero-junctions photochemistry array according to claim 2 in the utilization efficiency for promoting sunlight.
CN201711383553.XA 2017-12-20 2017-12-20 Preparation method of hetero-junctions photochemistry array and products thereof and application Active CN108165938B (en)

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WO2023287284A1 (en) * 2021-07-12 2023-01-19 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Thin film porous catalyst sheet

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Publication number Priority date Publication date Assignee Title
WO2023287284A1 (en) * 2021-07-12 2023-01-19 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Thin film porous catalyst sheet

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