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CN108000057A - The manufacture method of target material assembly - Google Patents

The manufacture method of target material assembly Download PDF

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Publication number
CN108000057A
CN108000057A CN201711024429.4A CN201711024429A CN108000057A CN 108000057 A CN108000057 A CN 108000057A CN 201711024429 A CN201711024429 A CN 201711024429A CN 108000057 A CN108000057 A CN 108000057A
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China
Prior art keywords
target
slab
welding
back plate
powder raw
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CN201711024429.4A
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Chinese (zh)
Inventor
刘树峰
鲁飞
李慧
李静雅
刘小鱼
娄树普
孙良成
白洋
成宇
郑天仓
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Baotou Rare Earth Research Institute
Ruike National Engineering Research Centre of Rare Earth Metallurgy and Functional Materials Co Ltd
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Baotou Rare Earth Research Institute
Ruike National Engineering Research Centre of Rare Earth Metallurgy and Functional Materials Co Ltd
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Priority to CN201711024429.4A priority Critical patent/CN108000057A/en
Publication of CN108000057A publication Critical patent/CN108000057A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23PMETAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
    • B23P15/00Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开了一种靶材组件的制造方法,包括:根据背板材质要求准备相应的背板粉末原料;准备待焊接的靶材板坯,靶材板坯包括溅射面和焊接面;将背板粉末原料和靶材板坯依次装入模具中,背板粉末原料和靶材板坯的焊接面相接触;将装有背板粉末原料和靶材板坯的模具放入真空热压烧结炉,同步进行背板热压烧结成型,以及靶材板坯与背板材料扩散焊接,得到靶材组件坯体;对得到的靶材组件坯体进行外形机加工处理得到靶材组件。本发明制造的靶材组件表面平整度高、弯曲变形小、焊合率高,背板致密度高,组件焊接成品率高。

The invention discloses a manufacturing method of a target assembly, comprising: preparing corresponding back plate powder raw materials according to the material requirements of the back plate; preparing a target slab to be welded, the target slab including a sputtering surface and a welding surface; The backplane powder raw material and the target slab are loaded into the mold in sequence, and the welding surface of the backplane powder raw material and the target slab is in contact; the mold containing the backplane powder raw material and the target slab is put into a vacuum hot-pressing sintering furnace , simultaneously carry out hot-pressing sintering molding of the back plate, and diffusion welding of the target slab and the back plate material to obtain the target component green body; perform shape machining on the obtained target component green body to obtain the target component. The surface of the target component produced by the invention has high flatness, small bending deformation, high welding rate, high density of the back plate, and high component welding yield.

Description

靶材组件的制造方法Manufacturing method of target assembly

技术领域technical field

本发明涉及一种材料加工技术,具体说,涉及一种靶材组件的制造方法。The invention relates to a material processing technology, in particular to a manufacturing method of a target component.

背景技术Background technique

磁控溅射工艺中,靶材组件一般由符合溅射要求的靶材板坯和具有一定强度的背板组成。背板材质通常有Al合金、Cu合金、Ti合金、不锈钢和Mo合金等。现有磁控溅射工艺条件下,靶材溅射面受高能粒子轰击,温度较高,并且处于10-5超高真空下;而背板一侧需通入一定压力的冷却水进行强冷,这样就在靶材组件两侧存在巨大的温度差和压力差,组件工作条件极为恶劣。因此,一方面要求靶材与背板具有较高的焊接质量,以便溅射时组件具有良好的导热、导电性能;另一方面要求靶材组件具有一定的强度,避免溅射时靶材发生开裂、脱落,影响成膜质量。In the magnetron sputtering process, the target assembly generally consists of a target slab that meets the sputtering requirements and a back plate with a certain strength. Backplane materials usually include Al alloys, Cu alloys, Ti alloys, stainless steel, and Mo alloys. Under the existing magnetron sputtering process conditions, the sputtering surface of the target is bombarded by high-energy particles, the temperature is high, and it is in an ultra-high vacuum of 10 -5 ; while the side of the back plate needs to be cooled by a certain pressure of cooling water. , so there is a huge temperature difference and pressure difference on both sides of the target component, and the working conditions of the component are extremely harsh. Therefore, on the one hand, the target and the back plate are required to have high welding quality so that the components have good thermal and electrical conductivity during sputtering; on the other hand, the target components are required to have a certain strength to avoid cracking of the target during sputtering , falling off, affecting the film quality.

目前靶材组件的制作方法为:预先准备背板型材和待焊接靶材坯体,通过钎焊或扩散焊将靶材坯体焊接于背板上,后经机加工获得靶材组件。钎焊方式受制于铟、锡等焊料熔点较低,仅适用于小功率溅射要求。扩散焊可以保证靶材组件的高强度焊接,适用于大功率磁控溅射,但是由于靶材与背板材料材质不同,热膨胀系数差异,扩散焊接后靶材组件弯曲变形大,焊接成品率低。The current manufacturing method of the target assembly is as follows: the back plate profile and the target blank to be welded are prepared in advance, the target blank is welded to the back plate by brazing or diffusion welding, and then the target assembly is obtained by machining. The brazing method is limited by the low melting point of solders such as indium and tin, so it is only suitable for low-power sputtering requirements. Diffusion welding can ensure high-strength welding of target components and is suitable for high-power magnetron sputtering. However, due to the different materials and thermal expansion coefficients of the target material and the back plate, the bending deformation of the target component after diffusion welding is large, and the welding yield is low. .

发明内容Contents of the invention

本发明所解决的技术问题是提供一种靶材组件的制造方法,制造的靶材组件表面平整度高、弯曲变形小、焊合率高,背板致密度高,组件焊接成品率高。The technical problem to be solved by the present invention is to provide a method for manufacturing target components. The manufactured target components have high surface flatness, small bending deformation, high welding rate, high density of the back plate, and high component welding yield.

技术方案如下:The technical solution is as follows:

一种靶材组件的制造方法,包括:A method of manufacturing a target assembly, comprising:

根据背板材质要求准备相应的背板粉末原料;Prepare the corresponding backplane powder raw materials according to the material requirements of the backplane;

准备待焊接的靶材板坯,靶材板坯包括溅射面和焊接面;Prepare the target slab to be welded, the target slab includes a sputtering surface and a welding surface;

将背板粉末原料和靶材板坯依次装入模具中,背板粉末原料和靶材板坯的焊接面相接触;Put the back plate powder raw material and the target slab into the mold in sequence, and the back plate powder raw material and the welding surface of the target slab are in contact;

将装有背板粉末原料和靶材板坯的模具放入真空热压烧结炉,同步进行背板热压烧结成型,以及靶材板坯与背板材料扩散焊接,得到靶材组件坯体;Put the mold containing the back plate powder raw material and the target slab into the vacuum hot-pressing sintering furnace, carry out the back plate hot-pressing sintering forming simultaneously, and the target slab and the back plate material diffusion welding to obtain the target component blank;

对得到的靶材组件坯体进行外形机加工处理得到靶材组件。The target component is obtained by performing shape machining on the obtained target component blank.

进一步:背板粉末原料为Al粉或Cu粉,粒度小于100μm。Further: the raw material of the backplane powder is Al powder or Cu powder, and the particle size is less than 100 μm.

进一步:靶材板坯装入模具前,将靶材板坯的焊接面预先进行喷砂或机加工处理,提高焊接面的粗糙度。Further: before the target slab is loaded into the mold, the welding surface of the target slab is pre-sandblasted or machined to improve the roughness of the welding surface.

进一步:模具放入真空热压烧结炉后,烧结成型前先进行预压紧,压紧压力为0.1~5MPa。Further: after the mold is put into the vacuum hot-pressing sintering furnace, it is pre-compacted before sintering and forming, and the compacting pressure is 0.1-5 MPa.

进一步:热压烧结温度500-800℃,压力20~30MPa,保温保压2~3小时。Further: the hot pressing sintering temperature is 500-800° C., the pressure is 20-30 MPa, and the temperature is kept for 2-3 hours.

与现有技术相比,本发明技术效果包括:Compared with the prior art, the technical effects of the present invention include:

(1)工艺流程简化,制作效率高。(1) The technological process is simplified and the production efficiency is high.

本发明方法将背板粉末原料和待焊接靶材板坯放入真空热压烧结炉,在真空热压烧结过程中,同步实现了背板粉末热压烧结成型,以及靶材板坯与背板材料热扩散焊接的同步进行。较现有技术相比,简化了靶材组件制作工艺流程,提高了组件制作效率。The method of the present invention puts the back plate powder raw material and the target slab to be welded into a vacuum hot-press sintering furnace. Material thermal diffusion welding is carried out simultaneously. Compared with the prior art, the manufacturing process flow of the target component is simplified, and the component manufacturing efficiency is improved.

(2)焊接强度高、焊合率高。(2) High welding strength and high welding rate.

本发明方法使背板以粉末形式与待焊接靶材板坯接触,二者接触面积大,易在界面处形成扩散层,提高焊接质量。同时在工艺实施过程中,外部施加压力始终存在,背板粉料流动速率快,实现高强度、高可靠性的扩散焊接。本发明方法制造的背板致密度高,组件焊接成品率高。The method of the invention makes the back plate contact with the target slab to be welded in powder form, the contact area of the two is large, a diffusion layer is easily formed at the interface, and the welding quality is improved. At the same time, in the process of process implementation, external pressure always exists, and the flow rate of backplane powder is fast, achieving high-strength and high-reliability diffusion welding. The back plate manufactured by the method of the invention has high density and high component welding yield.

(3)原料利用率高,组件焊接成品率高。本发明方法可以实现背板材料近净尺寸成型,后续机加工切削量少,原料利用率高。焊接后组件表面平整度高,弯曲变形小,焊接成品率高。(3) The utilization rate of raw materials is high, and the finished product rate of component welding is high. The method of the invention can realize the molding of the backboard material in a near-net size, with less subsequent machining and cutting, and high utilization rate of raw materials. After welding, the component surface has high flatness, small bending deformation, and high welding yield.

附图说明Description of drawings

图1是本发明中靶材组件的制造方法的流程图。Fig. 1 is a flow chart of the manufacturing method of the target assembly in the present invention.

具体实施方式Detailed ways

下面参考示例实施方式对本发明技术方案作详细说明。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的实施方式;相反,提供这些实施方式使得本发明更全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。The technical solutions of the present invention will be described in detail below with reference to exemplary implementations. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art.

如图1所示,是本发明中靶材组件的制造方法的流程图。As shown in FIG. 1 , it is a flow chart of the manufacturing method of the target assembly in the present invention.

靶材组件的制造方法,具体步骤如下:The manufacturing method of the target assembly, the specific steps are as follows:

步骤1:根据背板材质要求准备相应的背板粉末原料;Step 1: Prepare the corresponding backplane powder raw materials according to the requirements of the backplane material;

背板粉末原料为Al粉或Cu粉,粒度小于100μm。The raw material of the backplane powder is Al powder or Cu powder, and the particle size is less than 100 μm.

步骤2:准备待焊接的靶材板坯,靶材板坯包括溅射面和焊接面;Step 2: Prepare the target slab to be welded, the target slab includes a sputtering surface and a welding surface;

待焊接靶材板坯的焊接面预先进行喷砂或机加工处理,提高焊接面的粗糙度。The welding surface of the target slab to be welded is pre-sand blasted or machined to improve the roughness of the welding surface.

步骤3:将背板粉末原料和靶材板坯依次装入模具中,背板粉末原料和靶材板坯的焊接面相接触;Step 3: Put the backplane powder raw material and the target slab into the mold in sequence, and the backplane powder raw material and the welding surface of the target slab are in contact;

步骤4:将装有背板粉末原料和靶材板坯的模具放入真空热压烧结炉,同步进行背板热压烧结成型,以及靶材板坯与背板材料扩散焊接,得到靶材组件坯体;Step 4: Put the mold containing the back plate powder raw material and the target slab into the vacuum hot pressing sintering furnace, carry out the hot pressing sintering of the back plate simultaneously, and diffusion welding the target slab and the back plate material to obtain the target component Body;

模具放入真空热压烧结炉后,事先进行预压紧,压紧压力为0.1~5MPa。热压烧结温度500-800℃,压力20~30MPa,保温保压2~3小时。After the mold is put into the vacuum hot-pressing sintering furnace, pre-compacting is carried out in advance, and the compacting pressure is 0.1-5 MPa. The hot pressing sintering temperature is 500-800°C, the pressure is 20-30MPa, and the heat preservation and pressure are held for 2-3 hours.

步骤5:对得到的靶材组件坯体进行外形机加工处理得到靶材组件。Step 5: Perform shape machining on the obtained target component body to obtain a target component.

实施例1:Example 1:

制作靶材材质为Cr,背板材质为Cu的靶材组件,具体包括以下步骤:The production of a target assembly in which the target material is Cr and the back plate material is Cu includes the following steps:

(1)备料:准备待焊接Cr靶材板坯和Cu粉,其中Cu粉粒度为75μm;(1) Material preparation: prepare the Cr target slab and Cu powder to be welded, wherein the particle size of the Cu powder is 75 μm;

(2)板坯处理:将Cr靶材板坯的焊接面进行喷砂处理,提高焊接面的粗糙度;(2) Slab treatment: sandblasting the welding surface of the Cr target slab to improve the roughness of the welding surface;

(3)装模:将Cr靶材板坯和Cu粉依次装入模具中,使Cu粉和Cr靶材板坯的焊接面相接触;(3) Mold loading: put the Cr target slab and Cu powder into the mold in turn, so that the Cu powder and the welding surface of the Cr target slab are in contact;

(4)热压烧结、扩散焊:将装有Cr靶材板坯和Cu粉的模具放入真空热压烧结炉,并将热压炉的上、下压头对准模具上、下压头进行预压紧,压紧压力0.5MPa。关闭炉门开始抽真空,当热压炉内真空度高于1×10-2Pa时,开始升温,温度升至800℃,增加压力至25MPa,保温保压2小时,在Cu背板粉末热压烧结成型的同时进行Cr靶材板坯与Cu背板材料的热扩散焊接。随炉冷却得到靶材材质为Cr,背板材质为Cu的靶材组件坯体;(4) Hot pressing sintering, diffusion welding: put the mold with Cr target slab and Cu powder into the vacuum hot pressing sintering furnace, and align the upper and lower pressing heads of the hot pressing furnace with the upper and lower pressing heads of the mould. Carry out pre-compression, and the compaction pressure is 0.5MPa. Close the furnace door and start vacuuming. When the vacuum degree in the hot-press furnace is higher than 1×10 -2 Pa, start to heat up. The temperature rises to 800°C, and the pressure is increased to 25MPa. The thermal diffusion welding of the Cr target slab and the Cu back plate material is carried out at the same time as pressing and sintering. Cooling with the furnace to obtain the target component green body with the target material being Cr and the back plate material being Cu;

(5)机加工:对靶材组件坯体进行外形机加工处理得到靶材材质为Cr,背板材质为Cu的靶材组件。(5) Machining: machining the shape of the target component body to obtain a target component whose target material is Cr and the back plate material is Cu.

经上述工艺获得的靶材组件表面平整度高、弯曲变形小,Cu背板相对密度达98.3%。组件抗拉强度达55MPa,经C-Scan检测组件焊合率达99.5%。The surface of the target assembly obtained by the above process has high flatness, small bending deformation, and the relative density of the Cu back plate reaches 98.3%. The tensile strength of the component reaches 55MPa, and the welding rate of the component reaches 99.5% as detected by C-Scan.

实施例2:Example 2:

制作靶材材质为W-Ti合金,背板材质为Al的靶材组件,具体包括以下步骤:The production of a target assembly in which the target material is W-Ti alloy and the back plate material is Al includes the following steps:

(1)备料:准备待焊接W-Ti合金靶材板坯和Al粉,其中W-Ti合金成分为W-10wt.%Ti,Al粉粒度为80μm;(1) Material preparation: prepare the W-Ti alloy target slab and Al powder to be welded, wherein the W-Ti alloy composition is W-10wt.% Ti, and the Al powder particle size is 80 μm;

(2)板坯处理:将W-Ti合金靶材板坯的焊接面进行机加工处理,提高焊接面的粗糙度;(2) Slab treatment: Machining the welding surface of the W-Ti alloy target slab to improve the roughness of the welding surface;

(3)装模:将W-Ti合金靶材板坯和Al粉依次装入模具中,使Al粉和W-Ti合金靶材板坯的焊接面相接触;(3) Mold loading: the W-Ti alloy target slab and the Al powder are loaded into the mold in sequence, so that the welding surface of the Al powder and the W-Ti alloy target slab is in contact;

(4)热压烧结、扩散焊:将装有W-Ti合金靶材板坯和Al粉的模具放入真空热压烧结炉,并将热压炉的上、下压头对准模具上、下压头进行预压紧,压紧压力0.1MPa。关闭炉门开始抽真空,当热压炉内真空度高于1×10-2Pa时,开始升温,温度升至500℃,增加压力至30MPa,保温保压2.5小时,在Al背板粉末热压烧结成型的同时进行W-Ti合金靶材板坯与Al背板材料的热扩散焊接。随炉冷却得到靶材材质为W-Ti合金,背板材质为Al的靶材组件坯体;(4) Hot pressing sintering and diffusion welding: Put the mold with W-Ti alloy target slab and Al powder into the vacuum hot pressing sintering furnace, and align the upper and lower pressure heads of the hot pressing furnace with the upper and lower heads of the mold. The lower pressure head is pre-compressed, and the compaction pressure is 0.1MPa. Close the furnace door and start vacuuming. When the vacuum degree in the hot-press furnace is higher than 1×10 -2 Pa, start to heat up. The temperature rises to 500°C, and the pressure is increased to 30MPa. The thermal diffusion welding of the W-Ti alloy target slab and the Al back plate material is carried out while pressing and sintering. Cooling with the furnace to obtain a target component body in which the target material is W-Ti alloy and the back plate material is Al;

(5)机加工:对靶材组件坯体进行外形机加工处理得到靶材材质为W-Ti合金,背板材质为Al的靶材组件。(5) Machining: machining the shape of the target assembly body to obtain a target assembly in which the target material is W-Ti alloy and the back plate material is Al.

经上述工艺获得的靶材组件表面平整度高、弯曲变形小,Al背板相对密度达99.1%。组件抗拉强度达58MPa,经C-Scan检测组件焊合率达99.2%。The surface of the target assembly obtained by the above process has high flatness, small bending deformation, and the relative density of the Al back plate reaches 99.1%. The tensile strength of the component reaches 58MPa, and the welding rate of the component reaches 99.2% as detected by C-Scan.

实施例3:Example 3:

制作靶材材质为Co,背板材质为Al的靶材组件,具体包括以下步骤:Making a target assembly whose target material is Co and the back plate material is Al, specifically includes the following steps:

(1)备料:准备待焊接Co靶材板坯和Al粉,其中Al粉粒度为75μm;(1) Material preparation: prepare the Co target slab and Al powder to be welded, wherein the particle size of the Al powder is 75 μm;

(2)板坯处理:将Co靶材板坯的焊接面进行机加工处理,提高焊接面的粗糙度;(2) Slab treatment: Machining the welding surface of the Co target slab to improve the roughness of the welding surface;

(3)装模:将Co靶材板坯和Al粉依次装入模具中,使Al粉和Co靶材板坯的焊接面相接触;(3) mold loading: the Co target slab and the Al powder are sequentially loaded into the mold, so that the Al powder and the welding surface of the Co target slab are in contact;

(4)热压烧结、扩散焊:将装有Co靶材板坯和Al粉的模具放入真空热压烧结炉,并将热压炉的上、下压头对准模具上、下压头进行预压紧,压紧压力5MPa。关闭炉门开始抽真空,当热压炉内真空度高于1×10-2Pa时,开始升温,温度升至500℃,增加压力至20MPa,保温保压3小时,在Al背板粉末热压烧结成型的同时进行Co靶材板坯与Al背板材料的热扩散焊接。随炉冷却得到靶材材质为Co,背板材质为Al的靶材组件坯体;(4) Hot pressing sintering, diffusion welding: put the mold with Co target slab and Al powder into the vacuum hot pressing sintering furnace, and align the upper and lower pressure heads of the hot pressing furnace with the upper and lower pressure heads of the mold Carry out pre-compression, compaction pressure 5MPa. Close the furnace door and start vacuuming. When the vacuum degree in the hot-press furnace is higher than 1×10 -2 Pa, start to heat up. The temperature rises to 500°C, and the pressure is increased to 20MPa. The thermal diffusion welding of the Co target slab and the Al back plate material is carried out while pressing and sintering. Cooling with the furnace to obtain a target component green body whose target material is Co and the back plate material is Al;

(5)机加工:对靶材组件坯体进行外形机加工处理得到靶材材质为Co,背板材质为Al的靶材组件。(5) Machining: machining the shape of the target component body to obtain a target component whose target material is Co and the back plate material is Al.

经上述工艺获得的靶材组件表面平整度高、弯曲变形小,Al背板相对密度达98.9%。组件抗拉强度达53MPa,经C-Scan检测组件焊合率达99.3%。The surface of the target assembly obtained by the above process has high flatness, small bending deformation, and the relative density of the Al back plate reaches 98.9%. The tensile strength of the component reaches 53MPa, and the welding rate of the component reaches 99.3% as detected by C-Scan.

本发明所用的术语是说明和示例性、而非限制性的术语。由于本发明能够以多种形式具体实施而不脱离发明的精神或实质,所以应当理解,上述实施例不限于任何前述的细节,而应在随附权利要求所限定的精神和范围内广泛地解释,因此落入权利要求或其等效范围内的全部变化和改型都应为随附权利要求所涵盖。The terms used herein are terms of description and illustration, rather than limitation. Since the present invention can be embodied in many forms without departing from the spirit or essence of the invention, it should be understood that the above-described embodiments are not limited to any of the foregoing details, but should be construed broadly within the spirit and scope of the appended claims. , all changes and modifications falling within the scope of the claims or their equivalents shall be covered by the appended claims.

Claims (5)

1. a kind of manufacture method of target material assembly, including:
Required to prepare corresponding backboard powder raw material according to backboard material;
Prepare target slab to be welded, target slab includes sputter face and welding surface;
Backboard powder raw material and target slab are sequentially loaded into mould, the welding surface of backboard powder raw material and target slab connects Touch;
Mould equipped with backboard powder raw material and target slab is put into vacuum sintering funace, it is synchronous to carry out backboard hot pressed sintering Shaping, and target slab and back veneer material Diffusion Welding, obtain target material assembly base substrate;
Shape mechanical process is carried out to obtained target material assembly base substrate and obtains target material assembly.
2. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that:Backboard powder raw material is Al powder or Cu powder, Granularity is less than 100 μm.
3. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that:Before target slab loads mould, by target The welding surface of slab carries out sandblasting or mechanical process in advance, improves the roughness of welding surface.
4. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that:After mould is put into vacuum sintering funace, Pre-pressing is first carried out before sinter molding, compaction pressure is 0.1~5MPa.
5. the manufacture method of target material assembly as claimed in claim 1, it is characterised in that:500-800 DEG C of hot pressed sintering temperature, pressure 20~30MPa, when heat-insulation pressure keeping 2~3 is small.
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