CN107958195B

CN107958195B - Photoelectric sensing device and electronic equipment

Info

Publication number: CN107958195B
Application number: CN201710709054.9A
Authority: CN
Inventors: 李问杰
Original assignee: Liuzhou Zibo Technology Co ltd
Current assignee: Liuzhou Zibo Technology Co ltd
Priority date: 2017-08-17
Filing date: 2017-08-17
Publication date: 2021-10-26
Anticipated expiration: 2037-08-17
Also published as: CN107958195A

Abstract

The invention discloses a photoelectric sensing device and electronic equipment. The photoelectric sensing device includes a photosensitive bare chip, and the photosensitive bare chip includes a plurality of photosensitive pixels. An anti-aliasing imaging element is arranged on the photosensitive bare chip, and the anti-aliasing imaging element is used to prevent aliasing of optical signals received between adjacent photosensitive pixels in the photosensitive bare chip. The electronic device includes the photoelectric sensing device.

Description

Photoelectric sensing device and electronic equipment

Technical Field

The present invention relates to the field of photoelectric sensing, and in particular, to a photoelectric sensing device and an electronic apparatus.

Background

At present, a biological information sensor, especially a fingerprint sensor, has gradually become a standard component of electronic products such as mobile terminals. Because optical fingerprint identification sensor has stronger penetrability than capacitanc fingerprint identification sensor, consequently someone proposes an optical fingerprint identification module who is applied to mobile terminal. As shown in fig. 1, the optical fingerprint recognition module includes an optical fingerprint sensor 400 and a light source 402. The optical fingerprint sensor 400 is disposed under a protective cover 401 of the mobile terminal. The light source 402 is disposed adjacent to one side of the optical fingerprint recognition sensor 400. When the finger F of the user touches the protective cover 401, the light signal emitted from the light source 402 passes through the protective cover 401 and reaches the finger F, is reflected by the valleys and ridges of the finger F, and is received by the optical fingerprint recognition sensor 400, and forms a fingerprint image of the finger F.

However, the optical fingerprint recognition module cannot obtain a clear image, and still needs to be improved.

Disclosure of Invention

The embodiment of the invention aims to solve at least one technical problem in the prior art. Therefore, the embodiments of the present invention need to provide an optoelectronic sensing device and an electronic apparatus.

The photoelectric sensing device comprises a photosensitive bare chip, a photoelectric sensing unit and a control unit, wherein the photosensitive bare chip comprises a plurality of photosensitive pixels; the photosensitive bare chip is provided with an anti-aliasing imaging element, and the anti-aliasing imaging element is used for preventing aliasing of optical signals received between adjacent photosensitive pixels in the photosensitive bare chip.

According to the embodiment of the invention, the anti-aliasing imaging element is arranged on the photosensitive die, so that the optical signals received between the adjacent photosensitive pixels can not be aliased, and the image obtained after the optical sensing is carried out is clearer, thereby improving the sensing precision.

In some embodiments, a filter is disposed on a side of the anti-aliasing imaging element away from the photosensitive die or between the photosensitive die and the anti-aliasing imaging element, and the filter is used for filtering light signals outside a preset wavelength band.

In some embodiments, the predetermined wavelength band is a wavelength band corresponding to blue and green light signals.

By means of the arrangement of the filter membrane, interference signals in the ambient light can be effectively filtered, and therefore sensing precision is improved.

In some embodiments, the anti-aliasing imaging element comprises an optical absorption wall and a plurality of light transmission areas enclosed by the optical absorption wall.

In some embodiments, the light transmissive regions are uniformly distributed. The uniformly distributed light transmission areas enable the preparation process of the anti-aliasing imaging element to be simpler.

In some embodiments, the light absorbing wall includes a plurality of light absorbing blocks and block-up blocks alternately stacked. Because the thickness of each light absorption block is smaller than that of the light absorption wall, the process of etching the light transmission region is relatively easy, so that the process of the anti-aliasing imaging element is easy, and the light transmission performance of the light transmission region can be ensured. In addition, the light absorption wall is formed by the stacking of the heightening block and the light absorption block, so that the manufacturing process of the anti-aliasing imaging element is accelerated, and the anti-aliasing effect of the anti-aliasing imaging element is ensured.

In some embodiments, the raised block is made of a transparent material.

In some embodiments, the light-transmissive region is filled with a transparent material. Transparent materials are filled in the light transmission area, so that the strength of the anti-aliasing imaging element is increased, and the influence of impurities in the light transmission area on the light transmission effect can be avoided.

In certain embodiments, the anti-aliasing imaging element comprises a plurality of alternating layers of light absorbing and transparent support layers disposed in a stack; the light absorption layer comprises a plurality of light absorption blocks arranged at intervals; the transparent supporting layer is formed by filling transparent materials and also fills the intervals among the light absorption blocks; wherein the regions corresponding to the spaces form light-transmitting regions.

In certain embodiments, the thickness of each of the transparent support layers is not equal.

In certain embodiments, the thickness of the transparent support layer increases from layer to layer.

Through the thickness setting of the transparent supporting layer, the optical signal which is deviated from the vertical direction of the photosensitive bare chip outside the preset angle range is prevented from passing through the anti-aliasing imaging element, and therefore the anti-aliasing effect of the anti-aliasing imaging element is improved.

In some embodiments, the anti-aliasing imaging element is directly formed on the photosensitive panel, or the anti-aliasing imaging element is separately formed and then disposed on the photosensitive die.

In some embodiments, the optoelectronic sensing device further includes a package for packaging the photosensitive die and the anti-aliasing imaging element and the filter film above the photosensitive die.

In some embodiments, the photosensitive die includes a substrate, and the photosensitive pixels are distributed in an array on the substrate.

In some embodiments, the photosensitive pixel includes at least one photosensitive device, and the photosensitive device is configured to receive a light signal and convert the received light signal into a corresponding electrical signal.

In some embodiments, the light sensing device comprises one or more of a photodiode, a photoresistor, a phototriode.

In some embodiments, a scan line group and a data line group electrically connected to the photosensitive pixels are disposed between adjacent photosensitive pixels.

In some embodiments, the photo sensor device further includes a driving circuit for driving the photosensitive pixels to perform photo sensing, and the driving circuit is correspondingly connected to the scan line group, and is configured to provide a corresponding driving signal and transmit the driving signal to the photosensitive pixels through the scan line group.

In some embodiments, the driver circuit is formed on the substrate.

In some embodiments, the photoelectric sensing device further includes a signal processing circuit, and the signal processing circuit acquires the biological characteristic information of the target object according to an electric signal generated by the photosensitive pixels performing the light sensing.

In some embodiments, the photo-sensing device further includes a controller for controlling the driving circuit to output corresponding driving signals and controlling the signal processing circuit to receive the electric signals output by the photosensitive pixels.

In some embodiments, the signal processing circuit and the controller are disposed on the substrate, or the signal processing circuit and the controller are electrically connected to the photosensitive die through a flexible circuit board.

In some embodiments, the optoelectronic sensing device is a fingerprint sensing device.

In some embodiments, the optoelectronic sensing device is a photo chip for sensing biometric information.

In some embodiments, the optoelectronic sensing device further includes a package for packaging the photosensitive die and the anti-aliasing imaging element above the photosensitive die.

An electronic device according to an embodiment of the present invention includes the photoelectric sensing apparatus according to any one of the above embodiments.

Since the electronic device has the photoelectric sensing apparatus according to any of the above embodiments, the photoelectric sensing apparatus has all the advantages. In addition, the photoelectric sensing device can be arranged below a display screen of the electronic equipment, so that the biological characteristic information of the target object is obtained from the front side of the electronic equipment, the screen occupation ratio of the front side of the electronic equipment can be large enough, and the development of the electronic equipment towards the full-screen display direction is facilitated.

Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the invention.

Drawings

The above and/or additional aspects and advantages of embodiments of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic diagram of an optical image sensing structure applied to an electronic device in the prior art;

FIG. 2 is a schematic front view of an electronic device to which the present invention is applied;

FIG. 3 is a schematic cross-sectional view of the electronic device of FIG. 2 along line I-I, wherein only a portion of the electronic device is shown;

FIG. 4 is a schematic view of a partial structure of a photoelectric sensing apparatus according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of the range of optical signals that can be passed through by the anti-aliasing imaging component of one embodiment of the optoelectronic sensing device shown in FIG. 4;

FIG. 6 is a schematic diagram of a partial structure of an anti-aliasing imaging element according to an embodiment of the invention;

FIG. 7 is a schematic diagram of a partial structure of an anti-aliasing imaging element according to another embodiment of the invention;

FIG. 8 is a schematic diagram of a process for making the anti-aliasing imaging element shown in FIG. 6;

FIG. 9 is a schematic diagram of a partial structure of an anti-aliasing imaging element according to yet another embodiment of the invention;

FIG. 10 is a schematic view of a partial structure of an optoelectronic sensing device in accordance with another embodiment of the present invention;

fig. 11 is a schematic structural view of a photoelectric sensor device according to still another embodiment of the present invention.

FIG. 12 is a schematic diagram of a partial structure of a photosensitive die according to an embodiment of the invention;

fig. 13 is a block diagram showing the structure of a photoelectric sensor device according to still another embodiment of the present invention;

FIG. 14 is a schematic diagram of a circuit configuration of a light-sensing pixel in accordance with one embodiment of the present invention;

fig. 15 is a schematic circuit diagram of a light-sensing pixel in accordance with another embodiment of the present invention.

FIG. 16 is a schematic view of a display screen according to an embodiment of the present invention;

FIG. 17 is a schematic diagram of the relative positions of display pixels in a display panel and a light sensing device in a photo-sensing device according to one embodiment of the invention;

fig. 18 is a schematic front view of an electronic device to which the photoelectric sensor device of the present invention is applied.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. "contact" or "touch" includes direct contact or indirect contact. For example, the photoelectric sensing device disclosed hereinafter, which is disposed inside the electronic apparatus, for example, below the display screen, indirectly contacts the photoelectric sensing device with the user's finger through the protective cover and the display screen.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and settings of a specific example are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or reference letters in the various examples, which have been repeated for purposes of simplicity and clarity and do not in themselves dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.

Further, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details, or with other structures, components, and so forth. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring the invention.

Embodiments of the present invention provide a photoelectric sensing device disposed in an electronic device, and the display screen, such as but not limited to an OLED display panel, has a display device for emitting light signals. When the electronic equipment works, the display screen sends out optical signals to realize corresponding display effect. At this time, if a target object touches the electronic device, the optical signal emitted by the display screen is reflected after reaching the target object, the reflected optical signal is received by the photoelectric sensing device, and the photoelectric sensing device converts the received optical signal into an electrical signal corresponding to the optical signal. According to the electric signal generated by the photoelectric sensing device, the preset biological characteristic information of the target object can be obtained.

The electronic device may be, for example, but not limited to, a consumer electronic product, a home electronic product, a vehicle-mounted electronic product, a financial terminal product, or other suitable type of electronic product. The consumer electronic products include mobile phones, tablet computers, notebook computers, desktop displays, all-in-one computers, and the like. The household electronic products are intelligent door locks, televisions, refrigerators, wearable equipment and the like. The vehicle-mounted electronic products are vehicle-mounted navigators, vehicle-mounted DVDs and the like. The financial terminal products are ATM machines, terminals for self-service business handling and the like. The following embodiments are described by taking a mobile terminal of a mobile phone type as an example, but as described above, the following embodiments can also be applied to other suitable electronic products, and are not limited to the mobile terminal of the mobile phone type.

The predetermined biometric information (or image information) of the target object is, for example, but not limited to, skin texture information such as fingerprints, palm prints, ear prints, and sole prints, and other suitable biometric information such as heart rate, blood oxygen concentration, veins and arteries. The predetermined biometric information may be any one or more of the aforementioned listed information. The target object is, for example, but not limited to, a human body, but may be other suitable types of organisms.

Referring to fig. 2 and fig. 3, fig. 2 shows a front structure of an embodiment of an electronic device to which the photoelectric sensing apparatus of the present invention is applied, fig. 3 shows a cross-sectional structure of the electronic device in fig. 2 along the line I-I, and fig. 3 shows only a partial structure of the electronic device. The photoelectric sensing device 20 of the embodiment of the invention is applied to a mobile terminal 100, a display screen 10 is arranged on the front surface of the mobile terminal 100, and a protective cover plate 30 is arranged above the display screen 10. Optionally, the screen content of the display screen 10 is high, for example, more than 80%. The screen occupation ratio refers to a ratio of the display area S1 of the display screen 10 to the front area of the mobile terminal 100. The photoelectric sensing device 20 is correspondingly disposed below the display screen 10, and is correspondingly disposed in a partial area of the display area S1 of the display screen 10. The area of the front surface of the mobile terminal 100 corresponding to or facing the photo sensor device 20 is defined as a sensing region S2. The photo sensor device 20 is used to sense predetermined biometric information of a target object touching or proximate to the sensing region S2. It is understood that the photoelectric sensing apparatus 20 may also be disposed under the protective cover 30 and located in the front non-display area of the mobile terminal 100.

The sensing region S2 can be any position on the display region. For example, the sensing region S2 is disposed at a middle-lower position corresponding to the display region of the display screen 10. It is understood that the sensing region S2 is disposed at a middle-lower position corresponding to the display screen 10 for the convenience of the user. For example, when the user holds the mobile terminal 100, the user' S thumb may facilitate touching the location of the sensing region S2. Of course, the sensing region S2 may be placed at other suitable locations where a user may conveniently touch.

When the mobile terminal 100 is in a bright screen state and in the biometric information sensing mode, the display screen 10 emits an optical signal. When an object contacts or approaches the sensing region S2, the photo sensor device 20 receives light reflected by the object, converts the received light into a corresponding electrical signal, and obtains predetermined biometric information of the object, such as fingerprint image information, according to the electrical signal. Thus, the photoelectric sensing apparatus 20 can sense a target object touching or approaching a local area above the display area.

Referring to fig. 4, fig. 4 shows a partial structure of the photoelectric sensing device 20 according to an embodiment of the present invention. The photo-sensing device 20 includes a photo-sensing die 24, and the photo-sensing die 24 includes a plurality of photo-sensing pixels 22. The photosensitive pixels 22 are configured to receive the light signals from above and convert the received light signals into corresponding electrical signals. The photosensitive die 24 is provided with an anti-aliasing imaging element 28, and the anti-aliasing imaging element 28 is used for preventing aliasing of optical signals received between adjacent photosensitive pixels 22.

Because the reflection of the optical signal at different parts of the target object is different, and the surface of the target object is uneven, some parts of the target object are in contact with the protective cover plate 30 (see fig. 3), some parts of the target object are not in contact with the protective cover plate 30, so that the contact position is subjected to diffuse reflection, and the non-contact position is subjected to specular reflection, the optical signal sensed between the adjacent photosensitive pixels 22 can be subjected to aliasing, and the acquired sensed image is blurred. In this regard, the embodiment of the present invention arranges the anti-aliasing imaging element 28 on the photosensitive die 24, so that the image obtained after the photosensitive pixels 22 perform the photo sensing is clearer, thereby improving the sensing accuracy of the photo sensing apparatus 20.

In some embodiments, the anti-aliasing imaging component 28 has light absorbing properties, and of the light signals impinging on the anti-aliasing imaging component 28, only light signals approximately perpendicular to the photosensitive die 24 can pass through the anti-aliasing imaging component 28 and be received by the photosensitive pixels 22, and the rest of the light signals are absorbed by the anti-aliasing imaging component 28. In this manner, aliasing of the received optical signals between adjacent photosensitive pixels 22 can be prevented. It should be noted that the optical signal approximately perpendicular to the photosensitive die 24 includes an optical signal perpendicular to the photosensitive die 24 and an optical signal within a predetermined angle offset from the perpendicular direction of the photosensitive die 24. The preset angle range is within ± 20 °.

Specifically, the anti-aliasing imaging element 28 includes a light absorbing wall 281 and a plurality of light transmitting regions 282 surrounded by the light absorbing wall 281. The light absorbing walls 281 are formed of a light absorbing material. The light absorbing material includes metal oxides, carbon black paint, black ink, and the like. The metal in the metal oxide is, for example, but not limited to, one or more of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), and molybdenum (Mo). The light-transmitting region 282 extends in a direction perpendicular to the photosensitive die 24, so that, of the light signals irradiated to the anti-aliasing imaging element 28, the light signals in a direction approximately perpendicular to the photosensitive die 24 can pass through the light-transmitting region 282, and the rest of the light signals are absorbed by the light-absorbing wall 281.

In some embodiments, as shown in FIG. 5, FIG. 5 illustrates the range of the optical signal passing through the anti-aliasing imaging element 28. Due to the light absorption characteristics of the anti-aliasing imaging element 28, only the light signal between the light signal L1 and the light signal L2 can reach the photosensitive pixel 22 through the light-transmitting region 282, and the rest of the light signal is absorbed by the light-absorbing wall 281 of the anti-aliasing imaging element 28. As can be seen from fig. 5, the smaller the cross-sectional area of the light-transmitting region 282, the smaller the range of the angle α of the optical signal passing through the light-transmitting region 282, and therefore the better the anti-aliasing effect of the anti-aliasing imaging element 28. In this way, the anti-aliasing effect of the anti-aliasing imaging element 28 can be improved by the small-area light-transmitting region 282 provided for the anti-aliasing imaging element 28. In addition, since the cross-sectional area of the light-transmitting region 282 of the anti-aliasing imaging element 28 is small, each photosensitive pixel 22 corresponds to a plurality of light-transmitting regions 282, so that the photosensitive pixel 22 can sense sufficient light signals, and the sensing accuracy of the photoelectric sensing device 20 is improved.

Further, referring to fig. 6, fig. 6 shows a structure of the anti-aliasing imaging element 28 according to an embodiment of the invention. The light absorption wall 281 has a multi-layer structure, and includes light absorption blocks 281a and block elevations 281b alternately stacked. In one embodiment, the light absorbing blocks 281a are formed of a light absorbing material. Such as, but not limited to, metal oxides, carbon black coatings, black inks, and the like. The metal in the metal oxide is, for example, but not limited to, one or more of chromium (Cr), nickel (Ni), iron (Fe), tantalum (Ta), tungsten (W), titanium (Ti), and molybdenum (Mo). The raised blocks 281b are, for example, but not limited to, transparent layers formed of transparent materials, such as translucent materials, light absorbing materials, and the like.

In some embodiments, the light absorption blocks 281a in the same layer are spaced apart, and the region corresponding to the space between the light absorption blocks 281a in the same layer is the light transmission region 282. Further, the plurality of light absorption blocks 281a and the plurality of block-up blocks 281b of the same layer may be manufactured at one time. Specifically, by providing a mask, the mask is an integrally formed membrane, and the membrane forms an opening corresponding to the position of the light absorption block 281a, and the shape and size of the opening are consistent with the shape and size of the light absorption block 283. The light absorbing blocks 281a and the step-up blocks 281b alternately arranged are sequentially vapor-deposited on a support through the mask, thereby forming the anti-aliasing imaging element 28.

The height of the height block 281b is set to not only speed up the fabrication process of the anti-aliasing imaging device 28, but also ensure the anti-aliasing effect of the anti-aliasing imaging device 28.

In some embodiments, the transparent region 282 may be filled with a transparent material to increase the strength of the anti-aliasing imaging element layer, and to prevent impurities from entering the transparent region 282 to affect the light transmission effect. In order to ensure the light-transmitting effect of the light-transmitting area 282, the transparent material may be a material with a relatively high light transmittance, such as glass, PMMA (acrylic), PC (polycarbonate), or the like.

In some embodiments, referring to fig. 7, fig. 7 shows a structure of an anti-aliasing imaging element according to another embodiment of the invention. The anti-aliasing imaging element 28 is a multilayer structure, and the anti-aliasing imaging element 28 comprises light absorbing layers 283 and transparent support layers 284 which are alternately stacked; the light absorbing layer 283 includes a plurality of light absorbing blocks 283a arranged at intervals; the transparent support layer 284 is formed by filling a transparent material, and also fills the gaps 283b between the light absorption blocks 283 a; wherein the region corresponding to the space 283b forms the light-transmitting region 282.

Further, referring to fig. 8, fig. 8 shows a process for manufacturing the anti-aliasing imaging element according to an embodiment of the invention. Specifically, when the anti-aliasing imaging element 28 is prepared, a layer of light absorbing material is coated on a carrier, and the light-transmitting region 282 is etched away from the light absorbing material layer, so that the unetched portions form a plurality of light absorbing blocks 283 a. Such as, but not limited to, photolithography, X-ray lithography, electron beam lithography, and ion beam lithography. And the etching type may include both dry etching and wet etching. Then, a transparent material is coated on the etched light absorption blocks 283, and the transparent material not only covers the plurality of light absorption blocks 283a, but also fills the spaces 283b between the plurality of light absorption blocks 283a, thereby forming the transparent support layer 284. Then, a plurality of light absorbing blocks 283a are formed on the transparent support layer 284 in the manner in which the light absorbing layer 283 is formed, and so on, a plurality of light absorbing layers 283 and transparent support layers 284 which are alternately laminated are formed, thereby forming the anti-aliasing imaging element 28.

Further, in order to ensure the light-transmitting effect of the light-transmitting region 282, the transparent material forming the transparent supporting layer 284 may be a material with a relatively high light transmittance, such as glass, PMMA (acrylic), PC (polycarbonate), epoxy resin, or the like.

In some embodiments, referring to fig. 9, fig. 9 shows a structure of an anti-aliasing imaging element according to another embodiment of the invention. The anti-aliasing imaging element 28 comprises light absorbing layers 283 and transparent support layers 284 arranged in alternating layers, with each layer of transparent support layer 284 having an unequal thickness. I.e., thicknesses h1, h2, and h3 in fig. 7 are not equal in value. Optionally, the thickness of the transparent support layer 284 increases layer by layer, i.e., h1< h2< h 3. In this way, light signals which are shifted by ± 20 ° from the vertical direction of the photo-sensing die 24 can be prevented from passing through the transparent supporting layer 284 between the light-absorbing blocks 283a, so that the sensing accuracy of the photo-sensing device 20 is improved. It should be noted that the thickness parameter of each transparent supporting layer 284 and the width and height parameters of the light absorbing block 283a can be set differently and in combination with various settings, so as to improve the sensing accuracy of the photo-sensor device 20.

In some embodiments, the anti-aliasing imaging components 28 are formed directly on the photosensitive die 24, i.e., the anti-aliasing imaging components 28 are formed on the photosensitive die 24 with the photosensitive pixels 22. Alternatively, the anti-aliasing imaging component 28 may be fabricated separately and then disposed on the photosensitive die 24 with the photosensitive pixels 22, thereby speeding up the fabrication process of the optoelectronic sensing device 20.

In some embodiments, the plurality of light transmissive regions 282 in the anti-aliasing imaging component 28 are uniformly distributed, thereby making the fabrication process of the anti-aliasing imaging component 28 simpler. Moreover, the anti-aliasing imaging element 28 may be, for example, an integrally formed film, which is separately fabricated and then attached to the photo sensor die 24, thereby speeding up the fabrication process of the photo sensor device 20.

In some embodiments, taking the target object as a finger as an example, when the finger is located on the protective cover 30, if the finger has a plurality of tissue structures, such as epidermis, bone, meat, blood vessels, etc., and thus a part of the light signal in the ambient light penetrates through the finger and a part of the light signal is absorbed by the finger. The optical signal penetrating through the finger is transmitted to the protective cover 30 below the finger and reaches the photoelectric sensing device 20, and at this time, the photoelectric sensing device 20 not only senses the optical signal reflected by the target object, but also senses the optical signal of the environment light penetrating through the finger, so that accurate sensing cannot be performed. Therefore, in order to avoid the influence of the ambient light on the sensing of the biometric information of the target object by the photoelectric sensing device 20, as shown in fig. 10, fig. 10 shows a structure of the photoelectric sensing device 20 according to another embodiment of the present invention. The photosensitive die 24 is provided with a filter 23, that is, the filter 23 is disposed between the photosensitive die 24 and the anti-aliasing imaging element 28. The filter 23 is used for filtering light signals outside a predetermined wavelength band. In this embodiment, the optical signal outside the predetermined wavelength band is an interference signal formed by ambient light, that is, an optical signal that can penetrate through a finger in the ambient light. The filter film 23 filters out interference signals in the reflected optical signals, thereby improving the sensing accuracy of the photoelectric sensing device 20. However, alternatively, the filter 23 may also be disposed on the anti-aliasing imaging device 28, that is, the filter 23 is disposed on a side of the anti-aliasing imaging device 28 away from the photosensitive die 24.

In some embodiments, the optical signal other than the optical signal in the predetermined wavelength band is an optical signal in a longer wavelength band of the ambient light, because the optical signal in the longer wavelength band can penetrate through the target object, and the optical signal in the shorter wavelength band is absorbed by the target object. Therefore, the light signal penetrating through the finger in the ambient light can be filtered by filtering the light signal in a longer wave band in the ambient light, and the purpose of eliminating the interference signal of the ambient light is achieved.

In some embodiments, the predetermined wavelength band is a wavelength band corresponding to the blue light signal, i.e., the filter 23 filters out light signals other than the blue light signal.

In some embodiments, the predetermined wavelength band is a wavelength band corresponding to the green light signal, i.e., the filter 23 filters out light signals other than the green light signal.

Among the red, blue, and green light signals of the ambient light, a target object such as a finger absorbs the red light signal weakest, and absorbs the blue light signal strongest next to the green light signal. I.e. ambient light is shining on the finger, a large amount of the blue light signal is absorbed by the finger, and only a small amount, even no blue light signal penetrates the finger. Therefore, the optical signals in the wavelength bands other than the blue light signal or the green light signal are selected for filtering, so that the interference of the ambient light can be greatly eliminated, and the sensing accuracy of the photoelectric sensing device 20 can be improved.

In some embodiments, the optoelectronic sensing device 20 is a photosensitive chip for sensing biometric information.

In some embodiments, referring to fig. 11, fig. 11 shows a structure of a photoelectric sensing device 20 according to still another embodiment of the present invention. In some embodiments, the optoelectronic sensing device 20 further includes a package 30 for packaging the photosensitive die 24 and all devices above the photosensitive die 24, such as the anti-aliasing imaging component 28 and the filter 23. In particular, when the anti-aliasing imaging device 28 is located above the filter 23, the package can also fill the transparent region 282.

Referring to fig. 12, fig. 12 shows a structure of a photo-sensing die according to an embodiment. The photosensitive Die (Die)24 is a semiconductor integrated circuit device that further includes a substrate 26, and the plurality of photosensitive pixels 22 are formed on the substrate 26. In addition, a scan line group and a data line group electrically connected to the photosensitive pixels 22 are formed on the substrate 26, for example, the scan line group is used for transmitting a scan driving signal to the photosensitive pixels 22 to activate the photosensitive pixels 22 to perform photo sensing, and the data line group is used for outputting an electrical signal generated by the photosensitive pixels performing photo sensing. The substrate 26 is, for example, but not limited to, a silicon substrate or the like.

Specifically, in some embodiments, referring to fig. 13, fig. 13 shows a structure of a photoelectric sensing apparatus according to another embodiment of the present invention. The photosensitive pixels 22 are arranged in an array, such as a matrix. Of course, other regular or irregular distributions are also possible. The scan line group includes a plurality of scan lines 201, the data line group includes a plurality of data lines 202, and the plurality of scan lines 201 and the plurality of data lines 202 are disposed to cross each other and between adjacent photosensitive pixels 22. For example, a plurality of scan lines G1, G2 … Gm are arranged at intervals in the Y direction, and a plurality of data lines S1, S2 … Sn are arranged at intervals in the X direction. However, the plurality of scan lines 201 and the plurality of data lines 202 may be arranged at a certain angle, for example, 30 ° or 60 °, instead of being arranged perpendicularly as shown in fig. 13. In addition, due to the conductivity of the scan lines 201 and the data lines 202, the scan lines 201 and the data lines 202 at the crossing positions are isolated from each other by an insulating material.

It should be noted that the distribution and number of the scan lines 201 and the data lines 202 are not limited to the above-mentioned embodiments, and corresponding scan line groups and data line groups may be correspondingly arranged according to different structures of photosensitive pixels.

Furthermore, the plurality of scan lines 201 are connected to a driving circuit 25, and the plurality of data lines 202 are connected to a signal processing circuit 27. The driving circuit 25 is configured to provide a corresponding scan driving signal, and transmit the scan driving signal to a corresponding photosensitive pixel 22 through a corresponding scan line 201, so as to activate the photosensitive pixel 22 to perform light sensing. The driving circuit 25 is formed on the substrate 26, and may be electrically connected to the photosensitive pixels 22 through a flexible circuit board, i.e., connected to the plurality of scanning lines 201. The signal processing circuit 27 receives an electric signal generated by the corresponding photosensitive pixel 22 performing the light sensing through the data line 202, and acquires the biometric information of the target object based on the electric signal.

In some embodiments, the photo-sensing device 20 further includes a controller 29, and the controller 29 is configured to control the driving circuit to output a corresponding scanning driving signal, such as, but not limited to, activating the photosensitive pixels 22 row by row to perform photo-sensing. The controller 29 is also configured to control the signal processing circuit 27 to receive the electrical signals output by the photosensitive pixels 22, and generate biometric information of the target object based on the electrical signals after receiving the electrical signals output by all the photosensitive pixels 22 that perform the photo sensing.

Further, the processing circuit 27 and the controller 29 may be formed on the substrate 26, or may be electrically connected to the photo sensor die 24 through a flexible circuit board.

In some embodiments, as shown in FIG. 14, a specific structure of one light-sensitive pixel 22 is shown. The light-sensitive pixel 22 includes a light-sensitive device 220 and a switching device 222. The switch device 222 has a control terminal C and two signal terminals, such as a first signal terminal Sn1 and a second signal terminal Sn 2. The control terminal C of the switching device 222 is connected to the scan line 201, the first signal terminal Sn1 of the switching device 222 is connected to a reference signal L via the photo sensor 220, and the second signal terminal Sn2 of the switching device 222 is connected to the data line 202. It should be noted that the photosensitive pixel 22 shown in fig. 14 is for illustration only, and is not limited to other constituent structures of the photosensitive pixel 22.

Specifically, the photosensitive device 220 may be, for example, but not limited to, any one or more of a photodiode, a phototransistor, a photodiode, a photoresistor, and a thin film transistor. Taking a photodiode as an example, negative voltages are applied to two ends of the photodiode, at this time, when the photodiode receives an optical signal, a photocurrent proportional to the optical signal is generated, and the larger the intensity of the received optical signal is, the higher the generated photocurrent is, the higher the speed of voltage drop on the cathode of the photodiode is, so that by collecting voltage signals on the cathode of the photodiode, the intensities of optical signals reflected by different parts of a target object are obtained, and further, biological characteristic information of the target object is obtained. It is understood that a plurality of the light sensing devices 220 may be provided in order to increase the light sensing effect of the light sensing devices 220.

Further, the switching device 222 is, for example, but not limited to, any one or more of a triode, a MOS transistor, and a thin film transistor. Of course, the switching device 222 may also include other types of devices, and the number may also be 2, 3, etc.

In some embodiments, in order to further improve the sensing accuracy of the photo-sensor device 20, the photo-sensor device 220 with high sensitivity to the blue light signal may be selected. By selecting the photo sensor device 220 with high sensitivity to blue and green light signals to perform photo sensing, the photo sensor device 220 is more sensitive to blue and green light signals, and thus interference caused by red light signals in ambient light is avoided to a certain extent, thereby improving sensing accuracy of the photo sensor device 20.

Taking the structure of the light-sensing pixel 22 shown in fig. 14 as an example, the gate of the thin film transistor TFT serves as the control terminal C of the switching device 222, and the source and drain of the thin film transistor TFT correspond to the first signal terminal Sn1 and the second signal terminal Sn2 serving as the switching device 222. The gate of the thin film transistor TFT is connected to the scanning line 201, the source of the thin film transistor TFT is connected to the cathode of the photodiode D1, and the drain of the thin film transistor TFT is connected to the data line 202. The anode of the photodiode D1 is connected to a reference signal L, which is, for example, a ground signal or a negative voltage signal.

When the photosensitive pixel 22 performs the light sensing, a scan driving signal is applied to the gate of the thin film transistor TFT through the scan line 201 to drive the thin film transistor TFT to be turned on. At this time, the data line 202 is connected to a positive voltage signal, when the TFT is turned on, the positive voltage signal on the data line 202 is applied to the cathode of the photodiode D1 through the TFT, and since the anode of the photodiode D1 is grounded, a reverse voltage is applied across the photodiode D1, so that the photodiode D1 is in a reverse bias state, i.e., in an operating state. At this time, when an optical signal is irradiated to the photodiode D1, the reverse current of the photodiode D1 rapidly increases, thereby causing a current change on the photodiode D1, which can be obtained from the data line 202. Since the larger the intensity of the optical signal is, the larger the generated reverse current is, the intensity of the optical signal can be obtained according to the current signal acquired on the data line 202, and thus the biometric information of the target object can be obtained.

In some embodiments, the reference signal L may be a positive voltage signal, a negative voltage signal, a ground signal, or the like. It is within the scope of the present invention that the electrical signal provided on the data line 202 and the reference signal L are applied to both ends of the photodiode D1, so that a reverse voltage is formed across the photodiode D1 to perform the light sensing.

It is to be understood that the connection method of the thin film transistor TFT and the photodiode D1 in the photosensitive pixel 22 is not limited to the connection method shown in fig. 14, and other connection methods may be used. For example, as shown in fig. 15, the gate G of the thin film transistor TFT is connected to the scanning line 201, the drain D of the thin film transistor TFT is connected to the positive electrode of the photodiode D1, and the source S of the thin film transistor TFT is connected to the data line 202. The cathode of the photodiode D1 is connected to a positive voltage signal.

Referring to fig. 16, fig. 16 shows a partial structure of an OLED panel as an embodiment of a display panel. Taking the display screen 10 as an OLED display screen as an example, the display screen 10 further includes a transparent substrate 101. The display pixel 12 includes an anode 102 formed on a transparent substrate 101, a light-emitting layer 103 formed on the anode 102, and a cathode 104 formed on the light-emitting layer 103. When a voltage signal is applied to the anode 102 and the cathode 104, a large number of carriers accumulated on the anode 102 and the cathode 104 will move to the light-emitting layer 103 and enter the light-emitting layer 103, so as to excite the light-emitting layer 103 to emit a corresponding light signal.

In certain embodiments, the anode 102 and cathode 104 are made of an electrically conductive material. For example, the anode 102 is made of a suitable conductive material such as Indium Tin Oxide (ITO), and the cathode 104 is made of a suitable conductive material such as metal or ITO. The display screen 10 is not limited to an OLED display screen and may be any other suitable type of display screen. In addition, the display screen 10 may be a rigid screen made of a rigid material, or may be a flexible screen made of a flexible material. Furthermore, the OLED display screen of embodiments of the present invention may be a bottom emission type device, a top emission type device, or other suitable type of construction of the display device.

Referring to fig. 17, fig. 17 shows a relative structure of a photosensitive device and a display pixel in a photosensitive pixel of an embodiment, and the display pixel 12 is, for example, but not limited to, three display pixels, i.e., a red pixel R, a green pixel G, and a blue pixel B, wherein a light-emitting layer in the red pixel R employs a light-emitting material that emits a red light signal, a light-emitting layer in the green pixel G employs a light-emitting material that emits a green light signal, and a light-emitting layer in the blue pixel B employs a light-emitting material that emits a blue light signal. Of course, the display screen 10 may also adopt other display technologies to realize display, for example, a color conversion technology, in which light emitted from a blue OLED is absorbed by a fluorescent dye and then converted into red, green, and blue light signals. The display pixels 12 in the display screen 10 are not limited to the arrangement shown in fig. 17, and may have another arrangement, for example, a pentiel arrangement.

Further, the display panel 10 further includes a driving circuit and a corresponding driving circuit (not shown in the figure) for driving each display pixel 12 to emit light, and the driving circuit and the corresponding driving circuit may be disposed between each display pixel 12 or disposed below each display pixel 12. For better display effect, the areas of the display pixels, the driving circuits and the corresponding driving circuits are set to be opaque areas, and the rest areas are set to be transparent areas. And the light sensing device 220 is located below the light transmissive region for better light sensing. It is understood that the light-transmissive area and the light-opaque area of the display screen 10 are not strictly limited, and whether the light is transmitted is determined by the composition and distribution of the composition of the display screen 10. For example, when the structure forming the display pixels 12 adopts a transparent structure, the region where the display pixels are disposed will become a light-transmitting region.

Referring to fig. 17, a gap H is formed between adjacent display pixels, and the gap H has a light-transmitting region. The photo-sensing devices 220 in the photo-sensing pixels 22 are correspondingly disposed below the gaps H between adjacent display pixels. Such as but not limited to directly below, may be any location where sufficient optical signals are received. It can be understood that the more the light signal passes through the gap H, the higher the sensing accuracy of the photo-sensor device 20.

In some embodiments, referring to fig. 18, fig. 18 shows a structure of another embodiment of an electronic device. The front side of the electronic device 100 comprises a first display area 110 and a second display area 120, wherein the first display area 110 occupies most of the whole display area of the front side for displaying a higher resolution image of the electronic device; the second display area 120 is located at a lower-middle position of the front surface and occupies a small area of the entire display area for displaying lower-resolution images of the electronic device, such as virtual buttons, navigation bars, prompts, and the like. The photoelectric sensing device 20 is disposed corresponding to the second display area 120 to perform optical sensing on the target object placed on the second display area 120 to obtain the biometric information of the target object. It should be noted that the first display area 110 and the second display area 120 are not limited to the distribution structure shown in fig. 18, and can be flexibly configured according to the actual use requirement of the electronic device.

In some embodiments, the first display region 110 includes a plurality of first display pixels, the second display region 120 includes a plurality of second display pixels, and a first gap between adjacent second display pixels is larger than a second gap between adjacent first display pixels. Therefore, when the light sensing device 220 is disposed corresponding to the second gap, more light signals pass through the second gap, thereby improving the sensing accuracy of the photo-sensing apparatus 20.

In some embodiments, the first display area 110 and the second display area 120 may be different display areas of the same display screen. Of course, the first display area 110 and the second display area 120 may correspond to two display screens, and then the two display screens are spliced.

In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and those skilled in the art can make changes, modifications, substitutions and alterations to the above embodiments within the scope of the present invention.

Claims

1. An optoelectronic sensing device, comprising: the photoelectric sensing device comprises a photosensitive bare chip, wherein the photosensitive bare chip comprises a plurality of photosensitive pixels; the photoelectric sensing device comprises a photosensitive bare chip, a photoelectric sensing element and an anti-aliasing imaging element, wherein the photosensitive bare chip is provided with the anti-aliasing imaging element, the anti-aliasing imaging element is used for preventing aliasing of a received optical signal between adjacent photosensitive pixels in the photosensitive bare chip, the photoelectric sensing device further comprises a packaging body, the packaging body is used for packaging the photosensitive bare chip and the anti-aliasing imaging element above the photosensitive bare chip, and the photoelectric sensing device is a photosensitive chip.

2. The photo-sensing device of claim 1, wherein: and a filter film is arranged on one side of the anti-aliasing imaging element, which is far away from the photosensitive bare chip, or between the photosensitive bare chip and the anti-aliasing imaging element, and the filter film is used for filtering light signals outside a preset waveband.

3. The photo-sensing device of claim 2, wherein: the preset wave band is a wave band corresponding to blue and green light signals.

4. The photo-sensing device of claim 1, wherein: the anti-aliasing imaging element comprises an optical absorption wall and a plurality of light transmission areas enclosed by the optical absorption wall.

5. The photo-sensing device of claim 4, wherein: the light transmission areas are uniformly distributed.

6. The photo-sensing device of claim 4, wherein: the light absorption wall comprises a plurality of light absorption blocks and heightening blocks which are alternately stacked.

7. The photo-sensing device of claim 6, wherein: the heightening block is made of transparent materials.

8. The photo-sensing device of claim 4, wherein: and transparent materials are filled in the light-transmitting areas.

9. The photo-sensing device of claim 1, wherein: the anti-aliasing imaging element comprises a plurality of light absorption layers and transparent supporting layers which are alternately stacked; the light absorption layer comprises a plurality of light absorption blocks arranged at intervals; the transparent supporting layer is formed by filling transparent materials and also fills the intervals among the light absorption blocks; wherein the regions corresponding to the spaces form light-transmitting regions.

10. The photo-sensing device of claim 9, wherein: the thicknesses of the transparent support layers are not equal.

11. The photo-sensing device of claim 10, wherein: the thickness of the transparent supporting layer is increased layer by layer.

12. The photo-sensing device of claim 1, wherein: the anti-aliasing imaging element is formed directly on the photo-sensing die.

13. The photo-sensing device of claim 1, wherein: the anti-aliasing imaging element is independently manufactured and then arranged on the photosensitive die.

14. The photo-sensing device of claim 2, wherein: the packaging body is used for packaging the photosensitive bare chip, the anti-aliasing imaging element above the photosensitive bare chip and the filter film.

15. The photo-sensing device of claim 1, wherein: the photosensitive bare chip comprises a substrate, and the photosensitive pixels are distributed on the substrate in an array mode.

16. The photo-sensing device of claim 1, wherein: the photosensitive pixel comprises at least one photosensitive device, and the photosensitive device is used for receiving optical signals and converting the received optical signals into corresponding electric signals.

17. The photo-sensing device of claim 16, wherein: the photosensitive device comprises one or more of a photodiode, a photoresistor and a phototriode.

18. The photo-sensing device of claim 15, wherein: and a scanning line group and a data line group which are electrically connected with the photosensitive pixels are arranged between the adjacent photosensitive pixels.

19. The optoelectronic sensing device of claim 18, wherein: the photoelectric sensing device further comprises a driving circuit for driving the photosensitive pixels to perform light sensing, and the driving circuit is correspondingly connected with the scanning line group and used for providing corresponding driving signals and transmitting the driving signals to the photosensitive pixels through the scanning line group.

20. The optoelectronic sensing device of claim 19, wherein: the driving circuit is formed on the substrate.

21. The optoelectronic sensing device of claim 20, wherein: the photoelectric sensing device further comprises a signal processing circuit, and the signal processing circuit acquires biological characteristic information of a target object according to an electric signal generated by the photosensitive pixels performing light sensing.

22. The photo-sensing device of claim 21, wherein: the photoelectric sensing device further comprises a controller, wherein the controller is used for controlling the driving circuit to output corresponding driving signals and controlling the signal processing circuit to receive the electric signals output by the photosensitive pixels.

23. The photo-sensing device of claim 21, wherein: the signal processing circuit and the controller are both arranged on the substrate, or the signal processing circuit and the controller are electrically connected with the photosensitive bare chip through a flexible circuit board.

24. The optoelectronic sensing apparatus of any one of claims 1-23, wherein: the photoelectric sensing device is a fingerprint sensing device.

25. The optoelectronic sensing apparatus of any one of claims 1-23, wherein: the photoelectric sensing device is used for sensing biological characteristic information.

26. An electronic device, characterized in that: comprising a display screen and an optoelectronic sensing device according to any one of claims 1 to 25, and arranged below the display screen.