CN107946900B - Semiconductor laser module - Google Patents
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- CN107946900B CN107946900B CN201711474060.7A CN201711474060A CN107946900B CN 107946900 B CN107946900 B CN 107946900B CN 201711474060 A CN201711474060 A CN 201711474060A CN 107946900 B CN107946900 B CN 107946900B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 239000007788 liquid Substances 0.000 claims description 12
- 239000013013 elastic material Substances 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 6
- 230000000694 effects Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 3
- 238000005057 refrigeration Methods 0.000 description 42
- 239000000243 solution Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000005489 elastic deformation Effects 0.000 description 3
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
技术领域Technical field
本发明涉及半导体激光器领域,尤其涉及一种可用于泵浦及其他领域的新型半导体激光器模块。The present invention relates to the field of semiconductor lasers, and in particular to a new type of semiconductor laser module that can be used in pumping and other fields.
背景技术Background technique
半导体激光器具有体积小、重量轻、可靠性高、使用寿命长等优点,目前已经广泛应用于国民经济的各个领域,比如作为泵浦源用于泵浦固体激光器。在半导体激光器作为侧面泵浦源的应用中,目前已有的侧泵模块常采用半导体激光器呈正三角、正五角、正七角等形式分布于晶体棒周围,并通过热沉为半导体激光器以及晶体棒散热。Semiconductor lasers have the advantages of small size, light weight, high reliability, and long service life. They have been widely used in various fields of the national economy, such as being used as pump sources for pumping solid lasers. In the application of semiconductor lasers as side pump sources, existing side pump modules often use semiconductor lasers distributed around the crystal rod in the form of regular triangles, regular pentagons, regular heptagons, etc., and use heat sinks to dissipate heat for the semiconductor lasers and crystal rods. .
目前,以上模块的制冷方案多采用在热沉主体上设置多组通水道,并将制冷介质通入通水道的方式为模块进行制冷,如图1所示。但这种方式存在一些弊端,例如:通水道的设计引入了过多密封圈,导致装配复杂;每个环形模块上的各个激光器均通过外部螺钉固定,导致环形模块外部螺钉数量较多,且螺钉的突出部分影响整体美观;连接电极及引出电极需要缠绕绝缘胶带以防止短路,导致引入过多的绝缘胶带;多环组装时,每个环形模块上的通水道需一一对齐,对定位要求较高。At present, the refrigeration solutions for the above modules mostly use multiple sets of water channels on the main body of the heat sink, and the cooling medium is passed into the water channels to cool the modules, as shown in Figure 1. However, there are some disadvantages in this method, such as: the design of the water channel introduces too many sealing rings, which makes the assembly complicated; each laser on each ring module is fixed by external screws, resulting in a large number of external screws of the ring module, and the screws The protruding parts affect the overall appearance; the connecting electrodes and the lead-out electrodes need to be wrapped with insulating tape to prevent short circuits, resulting in the introduction of too much insulating tape; when assembling multiple rings, the water channels on each ring module need to be aligned one by one, and the positioning requirements are relatively high. high.
发明内容Contents of the invention
针对上述技术问题,本发明实施例的主要目的之一在于提供一种新型的半导体激光器模块,通过设计一种新型的插接件,能够实现各半导体激光器、连接电极及热沉等至少三者之间的限位固定,并且,该模块的制冷部分设置在半导体激光器单元外部,解决了传统方案难以精准定位的问题,装配简单,易于操作,具有较大的应用前景和市场前景。In view of the above technical problems, one of the main purposes of the embodiments of the present invention is to provide a new type of semiconductor laser module, which can realize at least three functions of each semiconductor laser, connecting electrode and heat sink by designing a new type of connector. The limit between the modules is fixed, and the refrigeration part of the module is set outside the semiconductor laser unit, which solves the problem of difficulty in precise positioning of the traditional solution. It is simple to assemble and easy to operate, and has great application prospects and market prospects.
本发明的技术方案是这样实现的:The technical solution of the present invention is implemented as follows:
本发明实施例提供一种半导体激光器模块,所述模块包括:至少一个半导体激光器单元,每个半导体激光器单元包括多个半导体激光器、插接件、以及为所述多个半导体激光器散热的热沉;其中,所述热沉内壁上开设有多个开口槽,多个半导体激光器分别键合于相邻开口槽之间的热沉内壁;所述插接件,用于通过插入所述开口槽中实现半导体激光器与热沉之间的固定。Embodiments of the present invention provide a semiconductor laser module, the module including: at least one semiconductor laser unit, each semiconductor laser unit including a plurality of semiconductor lasers, connectors, and a heat sink for dissipating heat for the plurality of semiconductor lasers; Wherein, a plurality of opening grooves are provided on the inner wall of the heat sink, and a plurality of semiconductor lasers are respectively bonded to the inner wall of the heat sink between adjacent opening grooves; the plug-in connector is used to realize the operation by inserting into the opening grooves. Fixation between semiconductor laser and heat sink.
上述方案中,所述插接件为全部绝缘或部分绝缘的弹性材质;其中,当所述插接件为部分绝缘时,所述插接件的表面或内部设置有导电部分,用于与相邻的半导体激光器相接触,实现相邻半导体激光器之间的电连接;当所述插接件为全部绝缘时,所述模块还包括具有通孔的连接电极,用于与相邻的半导体激光器相接触,实现相邻半导体激光器之间的电连接。In the above scheme, the plug connector is made of elastic material that is fully insulated or partially insulated; wherein, when the plug connector is partially insulated, a conductive part is provided on the surface or inside of the plug connector for communicating with the phase. Adjacent semiconductor lasers are in contact to realize electrical connection between adjacent semiconductor lasers; when the plug connector is fully insulated, the module also includes a connection electrode with a through hole for connecting with the adjacent semiconductor lasers. Contact to achieve electrical connection between adjacent semiconductor lasers.
上述方案中,所述插接件包括:平面部分、以及插接部分;所述插接部分包括:自所述平面部分的下表面延伸的至少一个呈钩状的插接头。In the above solution, the plug-in connector includes: a planar part and a plug-in part; the plug-in part includes: at least one hook-shaped plug connector extending from the lower surface of the planar part.
上述方案中,所述热沉内壁上的开口槽包括:开口部分、以及基底部分;其中,所述基底部分的内径大于开口部分的内径,所述插接头经连接电极上的通孔插入所述开口槽的基底部分。In the above solution, the opening groove on the inner wall of the heat sink includes: an opening part and a base part; wherein, the inner diameter of the base part is larger than the inner diameter of the opening part, and the plug connector is inserted into the through hole on the connecting electrode. The base portion of the open slot.
上述方案中,所述插接头的外径大于开口槽的开口部分的内径,使得钩状的插接头卡接于开口槽基底部分的侧壁,实现插接件与热沉的卡接固定。In the above solution, the outer diameter of the plug connector is larger than the inner diameter of the opening portion of the opening slot, so that the hook-shaped plug connector snaps into the side wall of the base portion of the opening slot to achieve snap-fitting fixation between the plug connector and the heat sink.
上述方案中,所述插接件的平面部分的外径大于连接电极的通孔的内径,用于实现插接件与半导体激光器、连接电极之间的限位固定。In the above solution, the outer diameter of the planar part of the plug connector is larger than the inner diameter of the through hole of the connecting electrode, which is used to realize the position-limiting fixation between the plug connector, the semiconductor laser and the connecting electrode.
上述方案中,所述模块还包括:设置于半导体激光器单元外部的至少两个制冷块;其中,所述制冷块的内表面设置有与热沉形状相匹配的卡槽,用于实现热沉与制冷块之间的固定;所述制冷块主体上设置有多个通液孔,所述通液孔的位置与各半导体激光器的位置相对应。In the above solution, the module further includes: at least two refrigeration blocks arranged outside the semiconductor laser unit; wherein, the inner surface of the refrigeration block is provided with a slot that matches the shape of the heat sink for realizing the connection between the heat sink and the heat sink. Fixing between refrigeration blocks; a plurality of liquid holes are provided on the main body of the refrigeration block, and the positions of the liquid holes correspond to the positions of each semiconductor laser.
上述方案中,所述制冷块还具有螺孔,用于通过螺钉实现各制冷块与各半导体激光器单元之间的固定。In the above solution, the refrigeration block also has screw holes for fixing each refrigeration block and each semiconductor laser unit through screws.
上述方案中,所述热沉包括:圆环状热沉或多边形热沉,所述多个半导体激光器发出的激光光束汇聚于所述圆环状热沉或多边形热沉的中心。In the above solution, the heat sink includes: an annular heat sink or a polygonal heat sink, and the laser beams emitted by the plurality of semiconductor lasers are converged at the center of the annular heat sink or the polygonal heat sink.
上述方案中,所述模块还包括引出电极,所述引出电极设置于所述半导体激光器单元内部,用于将所述半导体激光器单元的电极引至外部。In the above solution, the module further includes a lead-out electrode, which is disposed inside the semiconductor laser unit and used to lead the electrode of the semiconductor laser unit to the outside.
本发明技术方案的有益技术效果如下:The beneficial technical effects of the technical solution of the present invention are as follows:
1、插接件及相关结构的设计,使得在半导体激光器单元内部实现了将各半导体激光器、连接电极及热沉等至少三者之间固定连接的方案,固定效果较好,组装更加方便,具有较高的可操作性。1. The design of connectors and related structures enables the fixed connection of at least three semiconductor lasers, connecting electrodes and heat sinks within the semiconductor laser unit. The fixing effect is better, and assembly is more convenient. It has Higher operability.
2、制冷水路设置在各半导体激光器单元外部的制冷块上,使得各半导体激光器单元相互独立、互不干涉,在组装时能够直接夹持组装,彻底解决了传统方案中制冷水路位于热沉上导致的各环组装时,引入过多密封圈及各通水道定位对准难度高的问题。2. The refrigeration waterway is set on the refrigeration block outside each semiconductor laser unit, making each semiconductor laser unit independent of each other and not interfering with each other. It can be directly clamped and assembled during assembly, which completely solves the problem of the refrigeration waterway being located on the heat sink in the traditional solution. When assembling each ring, problems such as too many sealing rings and difficulty in positioning and aligning each water channel are introduced.
3、引出电极由半导体激光器单元内部直接引出,无需定位,解决了传统方案中引出电极设置外部连接块导致的定位问题以及引入过多绝缘胶带的问题,简单方便,具有更高的实用性。3. The extraction electrode is directly extracted from the inside of the semiconductor laser unit without positioning. It solves the positioning problem caused by the external connection block of the extraction electrode in the traditional solution and the problem of introducing too much insulating tape. It is simple and convenient, and has higher practicability.
附图说明Description of the drawings
图1为现有技术半导体激光器模块的结构示意图;Figure 1 is a schematic structural diagram of a semiconductor laser module in the prior art;
图2为本发明制冷块的立体结构示意图;Figure 2 is a schematic three-dimensional structural diagram of the refrigeration block of the present invention;
图3为本发明半导体激光器模块的立体结构示意图;Figure 3 is a schematic three-dimensional structural diagram of the semiconductor laser module of the present invention;
图4为本发明半导体激光器单元的局部结构示意图;Figure 4 is a partial structural schematic diagram of the semiconductor laser unit of the present invention;
图5为本发明的插接件与热沉限位固定的结构示意图;Figure 5 is a schematic structural diagram of the connector and heat sink limit fixation of the present invention;
图6为本发明半导体激光器单元的另一局部结构示意图。Figure 6 is another partial structural diagram of the semiconductor laser unit of the present invention.
附图标号说明:1为半导体激光器单元,11为半导体激光器,111为半导体激光器芯片,112为衬底,12为插接件,121为平面部分,122为插接部分,13为热沉,131为安装平台,14为开口槽,141为开口部分,142为基底部分,15为连接电极,151通孔,16为制冷块,161通液孔。Explanation of reference numbers: 1 is a semiconductor laser unit, 11 is a semiconductor laser, 111 is a semiconductor laser chip, 112 is a substrate, 12 is a connector, 121 is a plane part, 122 is a connector part, 13 is a heat sink, 131 It is the installation platform, 14 is the opening slot, 141 is the opening part, 142 is the base part, 15 is the connecting electrode, 151 is the through hole, 16 is the cooling block, and 161 is the liquid hole.
具体实施方式Detailed ways
本发明以下实施例提供了一种新型的半导体激光器模块,主要思路是:通过设计一种新型的插接件,在半导体激光器单元内部实现各半导体激光器、连接电极、热沉等至少三者之间的限位固定,并且将制冷水路设置在半导体激光器单元外部的制冷块上,制冷效率高,且装配简单。The following embodiments of the present invention provide a new type of semiconductor laser module. The main idea is: by designing a new type of plug connector, the semiconductor laser unit, the connection electrode, the heat sink, etc. are realized within the semiconductor laser unit. The limit is fixed, and the refrigeration water path is set on the refrigeration block outside the semiconductor laser unit. The refrigeration efficiency is high and the assembly is simple.
以下结合附图及具体实施例对本发明技术方案做进一步详细说明。The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
本发明实施例中,每个半导体激光器模块可以包括至少一个半导体激光器单元1,图4为本发明半导体激光器单元的局部结构示意图。如图4所示,每个半导体激光器单元又可以包括:多个半导体激光器11、插接件12、以及为所述多个半导体激光器散热的热沉13。In the embodiment of the present invention, each semiconductor laser module may include at least one semiconductor laser unit 1. FIG. 4 is a partial structural diagram of the semiconductor laser unit of the present invention. As shown in FIG. 4 , each semiconductor laser unit may include: a plurality of semiconductor lasers 11 , a plug connector 12 , and a heat sink 13 for dissipating heat from the plurality of semiconductor lasers.
这里,所述热沉13可以包括但不限于:圆环状热沉或多边形热沉,所述圆环并不一定为正圆,也可以为非正圆;所述多边形可以包括三角形、四边形、五边形等等。优选的,热沉13为正圆环状热沉或正多边形热沉。所述多个半导体激光器具体可以键合于所述圆环状热沉或多边形热沉的内壁,其发出的激光光束汇聚于所述圆环状热沉或多边形热沉的中心,本发明附图及具体实施例以所述热沉13为正圆环状热沉为例进行举例说明。基于上述,我们可以知道,本发明所述的半导体激光器模块的主要应用之一可以作为固定激光器的侧面泵浦源,固体激光器的增益介质(例如晶体棒)可设置于圆环状热沉或多边形热沉的中心。Here, the heat sink 13 may include but is not limited to: a circular heat sink or a polygonal heat sink. The circular ring is not necessarily a perfect circle, and may also be a non-perfect circle; the polygon may include a triangle, a quadrilateral, or a polygonal heat sink. Pentagon and so on. Preferably, the heat sink 13 is a regular annular heat sink or a regular polygonal heat sink. The plurality of semiconductor lasers can be specifically bonded to the inner wall of the annular heat sink or the polygonal heat sink, and the laser beams emitted by them are converged at the center of the annular heat sink or the polygonal heat sink. Figures of the present invention The specific embodiment is described by taking the heat sink 13 as a perfect circular annular heat sink as an example. Based on the above, we can know that one of the main applications of the semiconductor laser module of the present invention can be used as a side pump source of a fixed laser. The gain medium (such as a crystal rod) of a solid laser can be arranged in a circular heat sink or a polygon. The center of the heat sink.
所述半导体激光器11可以至少包括但不限于:激光芯片、衬底;所述激光芯片可以为边发射型半导体激光器芯片,在某些实施例中,其也可以为垂直腔面发射型半导体激光器芯片;激光芯片键合于所述衬底上,所述衬底具有与激光芯片相匹配的热膨胀系数。The semiconductor laser 11 may at least include but is not limited to: a laser chip and a substrate; the laser chip may be an edge-emitting semiconductor laser chip, and in some embodiments, it may also be a vertical cavity surface-emitting semiconductor laser chip. ; The laser chip is bonded to the substrate, and the substrate has a thermal expansion coefficient that matches the laser chip.
具体的,所述热沉内壁上可以开设有多个开口槽14,多个半导体激光器11分别键合于相邻开口槽之间的热沉内壁;所述插接件12用于通过插入所述开口槽14中,实现半导体激光器11与热沉13之间的固定。Specifically, a plurality of opening slots 14 can be provided on the inner wall of the heat sink, and a plurality of semiconductor lasers 11 are respectively bonded to the inner wall of the heat sink between adjacent opening slots; the plug connector 12 is used to insert the In the opening groove 14, the semiconductor laser 11 and the heat sink 13 are fixed.
上述方案中,所述插接件12为绝缘或部分绝缘的弹性材质,例如PEEK(聚醚醚酮)。当所述插接件为部分绝缘时,所述插接件的表面或内部设置有导电部分,用于与相邻的半导体激光器相接触,实现相邻半导体激光器之间的电连接;部分绝缘的插接件主要考虑的是:该插接件在实现固定限位的功能时,还可以同时作为连接电极使用,在不引入连接电极的情况下即可实现各半导体激光器之间的电连接。所述插接件12的导电功能具体可以通过采用在插接件表面选择性包覆导电层、或内部设置导电通道等其他方式实现。In the above solution, the plug connector 12 is made of insulating or partially insulating elastic material, such as PEEK (polyetheretherketone). When the plug connector is partially insulated, a conductive part is provided on the surface or inside of the plug connector for contacting adjacent semiconductor lasers to achieve electrical connection between adjacent semiconductor lasers; partially insulated The main consideration of the plug-in connector is that when the plug-in connector realizes the function of fixing the position, it can also be used as a connecting electrode at the same time, so that the electrical connection between the semiconductor lasers can be achieved without introducing a connecting electrode. The conductive function of the plug connector 12 can be realized by selectively coating a conductive layer on the surface of the plug connector, or by providing a conductive channel inside, or other methods.
具体的,所述插接件12可以包括平面部分121、以及插接部分122;这里,所述插接件12选择弹性材质的考虑是,弹性材质可产生一定的弹性形变,在插接件12插入到开口槽14时,其可以在产生一定形变量的情况下(收缩)插入,并在插入后在一定程度上恢复该形变量,例如恢复至原始状态,形变量的恢复能够为插接件在开口槽中的固定限位提供保证。Specifically, the plug connector 12 may include a planar part 121 and a plug-in part 122; here, the consideration of selecting an elastic material for the plug connector 12 is that the elastic material can produce a certain elastic deformation. When inserted into the open slot 14, it can be inserted with a certain amount of deformation (shrinkage), and the deformation amount can be restored to a certain extent after insertion, for example, restored to the original state. The recovery of the deformation amount can be the plug connector. Fixed stops in open slots provide assurance.
上述方案中,所述插接部分122可以包括:自所述平面部分121的下表面延伸的至少一个呈钩状的插接头,本发明实施例以所述插接头的数量为2进行举例说明。所述插接件12可以为一体注塑成型件,也可以将平面部分121和插接部分122各自成型后,利用机械固定或化学粘接等方式将两者固定到一起。In the above solution, the plug portion 122 may include: at least one hook-shaped plug connector extending from the lower surface of the planar portion 121 . In the embodiment of the present invention, the number of the plug connectors is two. The plug connector 12 may be an integral injection molded part, or the flat part 121 and the plug part 122 may be separately formed and then fixed together using mechanical fixing or chemical bonding.
进一步的,当所述插接件为全部绝缘的弹性材质时,所述模块还可以包括:具有通孔的连接电极15,所述连接电极15用于与相邻的半导体激光器相接触,实现相邻半导体激光器11之间的电连接,本发明实施例以所述插接件为全部绝缘的弹性材质为例进行举例说明。Further, when the plug connector is made of all insulated elastic materials, the module may also include: a connecting electrode 15 with a through hole, the connecting electrode 15 is used to contact the adjacent semiconductor laser to achieve mutual communication. As for the electrical connection between the adjacent semiconductor lasers 11, the embodiment of the present invention takes as an example that the plug connector is made of a fully insulated elastic material.
图5为本发明的插接件与热沉限位固定的结构示意图,图6为本发明半导体激光器单元的另一局部结构示意图。如图5、图6所示,上述方案中,所述热沉13内壁上开设的开口槽14可以具有开口部分141和基底部分142,且所述基底部分142的内径大于开口部分141的内径,这里所述基底部分142与开口部分141的内径指的是两者在某同一方向上的长度。FIG. 5 is a schematic structural diagram of the connector and the heat sink limiting and fixing of the present invention. FIG. 6 is another partial structural schematic diagram of the semiconductor laser unit of the present invention. As shown in Figures 5 and 6, in the above solution, the opening groove 14 opened on the inner wall of the heat sink 13 may have an opening part 141 and a base part 142, and the inner diameter of the base part 142 is larger than the inner diameter of the opening part 141, The inner diameters of the base portion 142 and the opening portion 141 here refer to the lengths of the two in the same direction.
所述插接头可以经所述连接电极15上的通孔151插入所述开口槽14的基底部分142,由于所述插接部分122为呈钩状的插接头,因此该钩状的插接头可卡接于基底部分142的侧壁上,实现插接部分12与热沉13的卡接固定。The plug connector can be inserted into the base portion 142 of the opening slot 14 through the through hole 151 on the connecting electrode 15. Since the plug portion 122 is a hook-shaped plug connector, the hook-shaped plug connector can It is clamped on the side wall of the base part 142 to realize the clamping and fixation of the plug-in part 12 and the heat sink 13 .
具体的,为了保证插接部分122牢固的插接于所述基底部分142,在实际应用中,所述插接头的外径应大于开口部分141的内径,这里,所述插接头的外径是指:插接件具有的所有插接头整体上在某一方向上的长度;开口部分141的内径是指:相同方向上开口部分141的长度。Specifically, in order to ensure that the plug portion 122 is firmly plugged into the base portion 142, in practical applications, the outer diameter of the plug connector should be larger than the inner diameter of the opening portion 141. Here, the outer diameter of the plug connector is Refers to: the overall length of all the plug connectors of the plug connector in a certain direction; the inner diameter of the opening portion 141 refers to: the length of the opening portion 141 in the same direction.
由于所述插接件12为弹性材质,因此在插接头的外径大于开口部分141的内径时,该插接头在具有一定弹性形变量的情况下也能通过开口部分141插入到开口槽14中,该弹性形变量在插接头插入开口槽14后会有一定程度的恢复,并且基于以上基底部分142的内径大于开口部分141的内径,使得钩状的插接头在插入基底部分142后能够卡接于基底部分142的侧壁,并且不会从开口部分141脱离,以此实现插接件12与热沉13的卡接固定。Since the plug connector 12 is made of elastic material, when the outer diameter of the plug connector is larger than the inner diameter of the opening 141 , the plug connector can be inserted into the opening groove 14 through the opening 141 with a certain amount of elastic deformation. , this elastic deformation amount will recover to a certain extent after the plug connector is inserted into the opening slot 14, and based on the above, the inner diameter of the base portion 142 is larger than the inner diameter of the opening portion 141, so that the hook-shaped plug connector can snap after being inserted into the base portion 142 on the side wall of the base portion 142 and will not detach from the opening portion 141 , thereby realizing the snap-fitting of the plug connector 12 and the heat sink 13 .
进一步的,对于所述插接件12,由于其插接头可以经所述连接电极15上的通孔151插入所述开口槽14中,因此,所述插接件的平面部分121的外径还应当大于连接电极15的通孔151的内径,以保证插接件的平面部分121不会从连接电极的通孔151处脱离,确保固定质量。这里所述平面部分121的外径指的是在某一方向上平面部分121的长度,所述通孔151的内径指的是在相同方向上通孔的直径。这样,由于插接件12与连接电极15两者固定,连接电极15与相邻的半导体激光器11连接,因此可以实现插接件12与半导体激光器11、连接电极15三者之间的限位固定。Furthermore, for the plug connector 12, since its plug connector can be inserted into the opening slot 14 through the through hole 151 on the connecting electrode 15, the outer diameter of the planar portion 121 of the plug connector is also It should be larger than the inner diameter of the through hole 151 of the connecting electrode 15 to ensure that the flat part 121 of the plug connector will not separate from the through hole 151 of the connecting electrode and ensure the fixing quality. The outer diameter of the planar portion 121 here refers to the length of the planar portion 121 in a certain direction, and the inner diameter of the through hole 151 refers to the diameter of the through hole in the same direction. In this way, since the plug connector 12 and the connection electrode 15 are both fixed, and the connection electrode 15 is connected to the adjacent semiconductor laser 11, the position limiting fixation between the plug connector 12, the semiconductor laser 11, and the connection electrode 15 can be achieved. .
另外,本发明实施例中的热沉13的内壁上还设置有安装平台131,安装平台131设置于相邻开口槽之间,该安装平台131具体可用于键合半导体激光器,如图6所示,图6仅示出部分半导体激光器、连接电极及插接件,未示出部分与已示出部分类似。In addition, a mounting platform 131 is provided on the inner wall of the heat sink 13 in the embodiment of the present invention. The mounting platform 131 is disposed between adjacent open slots. The mounting platform 131 can be used for bonding semiconductor lasers, as shown in Figure 6 , Figure 6 only shows part of the semiconductor laser, connecting electrodes and connectors, and the parts not shown are similar to the parts shown.
考虑到如何实现提升定位精度、方便安装这一点,以上半导体激光器单元所包括的热沉13上并未设置制冷水路,而是在半导体激光器单元外部设置制冷水路。Considering how to improve positioning accuracy and facilitate installation, the heat sink 13 included in the above semiconductor laser unit is not provided with a cooling water path, but is provided with a cooling water path outside the semiconductor laser unit.
进一步的,以上所述半导体激光器模块还可以包括设置于半导体激光器单元外部的至少两个制冷块16。图2为本发明制冷块的立体结构示意图,图3为本发明半导体激光器模块的立体结构示意图、如图2、图3所示,本发明实施例以所述制冷块16的数量为2进行举例说明,所述制冷块16的内表面设置有与热沉形状相匹配的卡槽(图中未示出),在多个半导体激光器单元进行组装时,可以将每个半导体激光器单元分别对应到相应的卡槽中,用于实现热沉与制冷块的固定。Furthermore, the above-mentioned semiconductor laser module may also include at least two cooling blocks 16 arranged outside the semiconductor laser unit. Figure 2 is a schematic three-dimensional structural diagram of the refrigeration block of the present invention. Figure 3 is a schematic three-dimensional structural diagram of the semiconductor laser module of the present invention, as shown in Figures 2 and 3. In the embodiment of the present invention, the number of the refrigeration blocks 16 is 2. Note that the inner surface of the refrigeration block 16 is provided with a slot (not shown in the figure) that matches the shape of the heat sink. When multiple semiconductor laser units are assembled, each semiconductor laser unit can be corresponding to the corresponding The card slot is used to fix the heat sink and refrigeration block.
进一步的,可以在所述制冷块16的卡槽处设置高导热层,例如铟膜层,主要用于实现热沉13与制冷块16之间的热交换,以提高制冷块16与半导体激光器单元之间的导热效率。Furthermore, a high thermal conductivity layer, such as an indium film layer, can be provided at the slot of the refrigeration block 16, which is mainly used to realize heat exchange between the heat sink 13 and the refrigeration block 16 to improve the efficiency between the refrigeration block 16 and the semiconductor laser unit. thermal conductivity efficiency.
具体的,所述制冷块16的制冷方式可以包括:传导制冷型、液体制冷型,其中,当所述制冷方式为传导制冷型时,所述制冷块由高导热材料制成,例如铜等高导热金属、和/或非金属材料;当所述制冷方式为液体制冷型时,所述制冷块主体上设置有多个通液孔;本发明实施例以所述制冷方式为液体制冷型为例进行举例示意。Specifically, the refrigeration method of the refrigeration block 16 may include: conduction refrigeration type and liquid refrigeration type. When the refrigeration method is the conduction refrigeration type, the refrigeration block is made of high thermal conductivity materials, such as copper and other high-temperature materials. Thermal conductive metal and/or non-metallic materials; when the refrigeration method is a liquid refrigeration type, the main body of the refrigeration block is provided with a plurality of liquid holes; in the embodiment of the present invention, the refrigeration method is a liquid refrigeration type as an example Give examples.
如图2、图3所示,所述制冷块主体上可以设置有多个通液孔161,优选的,为了达到更高效的制冷效果,所述通液孔的位置可以与各半导体激光器的位置相对应。所述通液孔161的形式可以包括但不限于:翅片状、微通孔阵列等各种形式。As shown in Figures 2 and 3, a plurality of liquid holes 161 can be provided on the main body of the refrigeration block. Preferably, in order to achieve a more efficient cooling effect, the positions of the liquid holes can be consistent with the positions of each semiconductor laser. Corresponding. The form of the liquid through hole 161 may include but is not limited to: fin shape, micro through hole array and other forms.
并且,所述制冷块还具有螺孔(图中未示出),通过螺钉可以实现各制冷块与各半导体激光器单元之间的固定。如图3所示,在本发明实施例中,各半导体激光器单元位于两个制冷块16所构成的中心空腔区域,螺钉可以旋入两个制冷块16所具有的螺孔中,这样即实现了将制冷块及各半导体激光器单元固定到一起。In addition, the refrigeration block also has screw holes (not shown in the figure), and each refrigeration block and each semiconductor laser unit can be fixed by screws. As shown in Figure 3, in the embodiment of the present invention, each semiconductor laser unit is located in the central cavity area formed by two refrigeration blocks 16, and the screws can be screwed into the screw holes of the two refrigeration blocks 16, thus achieving To fix the cooling block and each semiconductor laser unit together.
本发明的上述方案将制冷水路设置在热沉外部,即将制冷水路与热沉分离设计,分离式制冷水路的结构设计使得半导体激光器单元的热沉主体上不存在通水道结构,这样,当多组半导体激光器单元进行组装时,直接将其夹持至相应卡槽中即可,各半导体激光器单元之间相互独立,无干涉,易于组装及拆卸。并且,由于各半导体激光器单元之间相互独立,因此在组装时,各半导体激光器单元之间可以存在一定错位,以实现各半导体激光器单元有角度的排列。The above-mentioned solution of the present invention arranges the refrigeration waterway outside the heat sink, that is, the refrigeration waterway is designed to be separated from the heat sink. The structural design of the separated refrigeration waterway ensures that there is no water channel structure on the main body of the heat sink of the semiconductor laser unit. In this way, when multiple groups When assembling the semiconductor laser unit, just clamp it directly into the corresponding card slot. Each semiconductor laser unit is independent of each other, has no interference, and is easy to assemble and disassemble. Moreover, since the semiconductor laser units are independent of each other, there can be a certain misalignment between the semiconductor laser units during assembly to achieve an angular arrangement of the semiconductor laser units.
所述模块还包括引出电极,所述引出电极设置于所述半导体激光器单元内部,用于将所述半导体激光器单元的电极引至外部,具体可以经所述热沉引至外部,即引出电极由半导体激光器单元内部直接引出。为了避免短路,可在引出电极表面设置部分绝缘层,使其在引出路径中与热沉等绝缘,此种电极引出方式无需定位,解决了传统方案中引出电极设置外部连接块导致的定位问题以及引入过多绝缘胶带的问题,方便实用。The module also includes a lead-out electrode. The lead-out electrode is arranged inside the semiconductor laser unit and is used to lead the electrode of the semiconductor laser unit to the outside. Specifically, it can be led to the outside through the heat sink, that is, the lead-out electrode is formed by Directly drawn out from inside the semiconductor laser unit. In order to avoid short circuit, a partial insulating layer can be set on the surface of the lead electrode to insulate it from the heat sink in the lead out path. This electrode lead out method does not require positioning, which solves the positioning problems caused by the external connection block in the lead electrode in the traditional solution. It is convenient and practical to introduce the problem of too much insulating tape.
以上所述,仅为本发明的较佳实施例而已,并非用于限定本发明的保护范围。对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Various modifications and variations of the present invention may occur to those skilled in the art. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection scope of the present invention.
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