CN107918111A - High frequency millimeter swash frequency-scan radar receiving and transmitting front end module - Google Patents
High frequency millimeter swash frequency-scan radar receiving and transmitting front end module Download PDFInfo
- Publication number
- CN107918111A CN107918111A CN201711364262.6A CN201711364262A CN107918111A CN 107918111 A CN107918111 A CN 107918111A CN 201711364262 A CN201711364262 A CN 201711364262A CN 107918111 A CN107918111 A CN 107918111A
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- frequency
- millimeter
- unit
- high frequency
- swash
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- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000003321 amplification Effects 0.000 claims description 10
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 8
- 239000003365 glass fiber Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/023—Interference mitigation, e.g. reducing or avoiding non-intentional interference with other HF-transmitters, base station transmitters for mobile communication or other radar systems, e.g. using electro-magnetic interference [EMI] reduction techniques
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/88—Radar or analogous systems specially adapted for specific applications
- G01S13/93—Radar or analogous systems specially adapted for specific applications for anti-collision purposes
- G01S13/931—Radar or analogous systems specially adapted for specific applications for anti-collision purposes of land vehicles
Landscapes
- Engineering & Computer Science (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Radar Systems Or Details Thereof (AREA)
Abstract
The present invention relates to millimeter wave linear frequency sweep Radar Technology field, more particularly to a kind of high frequency millimeter swash frequency-scan radar receiving and transmitting front end module, including circuit substrate, the low-frequency channel component that is arranged in the high-frequency circuit assembly of circuit substrate upper surface and is arranged in circuit substrate lower surface, circuit substrate includes radio layer, stratum and low frequency layer, circuit substrate and is additionally provided with through hole successively from top to bottom;High-frequency circuit assembly includes high frequency millimeter ripple chip, and the radio layer of circuit substrate is provided with chip mounting hole, and high frequency millimeter ripple chip is installed in chip mounting hole.By using mixed pressure laminate encapsulation mode, solve the shortcomings that existing high frequency millimeter swash frequency-scan radar is complicated, bulky, weight is high, of high cost, while module size is reduced, also reduce the cost of module.
Description
Technical field
The present invention relates to millimeter wave linear frequency sweep Radar Technology field, and in particular to a kind of high frequency millimeter ripple linear frequency sweep thunder
Up to receiving and transmitting front end module.
Background technology
For millimeter wave linear frequency sweep radar since its wave beam is narrow, Secret anti-interference ability is strong, in millimeter wave range radar, automobile
Anticollision Radar field just receives more and more attention.Existing millimeter wave linear frequency sweep radar transceiver front-end module generally existing
In the Ku-Ka frequency ranges (20-40GHz), due to the limitation of wave band, it can not accomplish the distance resolution and rate identification of higher
Degree.The millimeter wave linear frequency sweep radar transceiver front-end module of higher frequency range, since the difficult packaging effects of high frequency millimeter ripple chip still need to
Using metal waveguide connection mode, cause module volume big, processing difficulties are of high cost, hinder millimeter wave linear frequency sweep significantly
The practical application of radar transceiver front-end module.
The content of the invention
In view of this, the application provides a kind of implementation of high frequency millimeter swash frequency-scan radar receiving and transmitting front end module,
Above-mentioned technical problem is solved, millimeter wave linear frequency sweep radar transceiver front-end module is conveniently used for millimeter wave ranging
The fields such as radar, automobile collision avoidance radar.
To solve above technical problem, technical solution provided by the invention is that a kind of high frequency millimeter swash frequency-scan radar is received
Front-end module is sent out, including circuit substrate, is arranged in the high-frequency circuit assembly of circuit substrate upper surface and is arranged under circuit substrate
The low-frequency channel component on surface, the circuit substrate include radio layer, stratum and low frequency layer, the circuit base successively from top to bottom
Plate is additionally provided with through hole;The high-frequency circuit assembly includes high frequency millimeter ripple chip, and the radio layer of the circuit substrate is provided with
Chip mounting hole, the high frequency millimeter ripple chip are installed in the chip mounting hole.
More preferably, the high frequency millimeter ripple chip upper surface and the circuit substrate upper surface are in same level.
More preferably, the rf inputs of the high frequency millimeter ripple chip and RF output end are connect using gold wire bonding technique
Enter high-frequency circuit.
More preferably, between the rf inputs side of the high frequency millimeter ripple chip and corresponding chip mounting hole side wall
Gap is no more than 100um;Between the RF output end side of the high frequency millimeter ripple chip and corresponding chip mounting hole side wall
Gap be no more than 100um.
More preferably, the circuit substrate is pressed and formed by high-frequency circuit plate and glass fibre epoxy plate, the high frequency
Circuit boards lower surface and the glass fibre epoxy plate upper surface are stratum.
More preferably, the high-frequency circuit assembly includes VCO unit, work(subdivision, transmitter unit and receiving unit;It is described low
Frequency circuit component includes triangular wave unit and power supply unit;The triangular wave unit output terminal passes through through hole cabling and the VCO
Unit input terminal is electrically connected, and the VCO unit output terminal is electrically connected with the work(subdivision input terminal, the work(subdivision first
Output terminal is electrically connected with the transmitter unit input terminal, second output terminal of work(subdivision and receiving unit input terminal electricity
Connection, the power supply unit are electrically connected with the VCO unit, the transmitter unit and the receiving unit respectively by through hole cabling
Connect, the power supply unit is also electrically connected with the triangular wave unit.
More preferably, the transmitter unit includes transmitting terminal frequency multiplication component, power amplifying segments and the transmitting being sequentially connected electrically
Antenna element.
More preferably, the transmitting terminal frequency multiplication component includes 140GHz quadrupler chips, and the power amplifying segments include
140GHz power amplifier chips, the 140GHz quadruplers chip and the 140GHz power amplifier chips are installed in
In corresponding chip mounting hole.
More preferably, the receiving unit includes the receiving terminal frequency multiplication component, zero intermediate frequency mixing unit, low noise being sequentially connected electrically
Sound amplifier unit and reception antenna component.
More preferably, the low noise amplification component includes 140GHz the low noise amplifier chips, the 140GHz low noises
Amplifier chip is installed in corresponding chip mounting hole.
Compared with prior art, its advantage describes in detail as follows the application:The high frequency millimeter swash that the application provides
Property frequency-scan radar receiving and transmitting front end module include circuit substrate, be arranged in the high-frequency circuit assembly of circuit substrate upper surface and be arranged in
The low-frequency channel component of circuit substrate lower surface, circuit substrate include radio layer, stratum and low frequency layer, circuit successively from top to bottom
Substrate is additionally provided with through hole;High-frequency circuit assembly includes high frequency millimeter ripple chip, and the radio layer of circuit substrate is provided with chip peace
Hole is filled, high frequency millimeter ripple chip is installed in chip mounting hole.By by high-frequency circuit assembly and low-frequency channel component by stratum
Separate, efficiently solve coupling and interference between module medium-high frequency circuit and low-frequency channel;Sealed by using mixed pressure laminate
Die-filling formula, solves the shortcomings that existing high frequency millimeter swash frequency-scan radar is complicated, bulky, weight is high, of high cost,
While module size is reduced, the cost of module is also reduced.
Brief description of the drawings
Fig. 1 is high frequency millimeter swash frequency-scan radar receiving and transmitting front end function structure chart of the embodiment of the present invention;
Fig. 2 is millimeter wave linear frequency sweep radar transceiver front-end module principle figure of the embodiment of the present invention;
Fig. 3 is high frequency millimeter ripple chip installing structure figure of the embodiment of the present invention;
In attached drawing mark for:1- circuit substrates, 11- radio layers, 12- stratum, 13- low frequency layers, 2- high-frequency circuit assemblies, 3-
Low-frequency channel component, 4- through holes, 21-VCO units, 22- work(subdivisions, 23- transmitter units, 24- receiving units, 31- triangular waves
Unit, 32- power supply units, 5- high frequency millimeter ripple chips, 6- bonding gold wire lines, 7- chip mounting holes, 231- transmitting terminal frequencys multiplication portion
Part, 232- power amplifying segments, 233- transmitting antenna components, 241- receiving terminal frequency multiplication components, 242- zero intermediate frequency mixing units,
243- low noise amplification components, 244- reception antenna components.
Embodiment
It is below in conjunction with the accompanying drawings and specific real in order to make those skilled in the art more fully understand technical scheme
Applying example, the present invention is described in further detail.
As shown in Figure 1-Figure 3, the embodiment of the present invention provides a kind of 140GHz millimeter waves linear frequency sweep radar transceiver front-end mould
Block, including circuit substrate 1, be arranged in the high-frequency circuit assembly 2 of 1 upper surface of circuit substrate and be arranged in 1 lower surface of circuit substrate
Low-frequency channel component 3, circuit substrate 1 includes radio layer 11, stratum 12 and low frequency layer 13, circuit substrate 1 successively from top to bottom
It is additionally provided with through hole 4.
Wherein, circuit substrate 1 is pressed and formed by high-frequency circuit plate and glass fibre epoxy plate, under high-frequency circuit plate
Surface and glass fibre epoxy plate upper surface are stratum.
Wherein, it is single to include VCO (voltage-controlled oscillator voltage controlled oscillators) for high-frequency circuit assembly 2
Member 21, work(subdivision 22, transmitter unit 23 and receiving unit 24;Low-frequency channel component 3 includes triangular wave unit 31 and power supply list
Member 32;31 output terminal of triangular wave unit is electrically connected by 4 cabling of through hole with 21 input terminal of VCO unit, 21 output terminal of VCO unit with
22 input terminal of work(subdivision is electrically connected, and 22 first output terminal of work(subdivision is electrically connected with 23 input terminal of transmitter unit, work(subdivision
22 second output terminals are electrically connected with 24 input terminal of receiving unit, power supply unit 32 by through hole cabling respectively with VCO unit 21, hair
Penetrate unit 23 and receiving unit 24 is electrically connected, power supply unit 32 is also electrically connected with triangular wave unit 31.Wherein, transmitter unit 23 wraps
Include transmitting terminal frequency multiplication component 231, power amplifying segments 232 and the transmitting antenna component 233 being sequentially connected electrically.Wherein, receive single
Receiving terminal frequency multiplication components 241 that member 24 includes being sequentially connected electrically, zero intermediate frequency mixing unit 242, low noise amplification component 243 and connect
Receive antenna element 244.
Specifically, 31 core of triangular wave unit produces stable high-precision triangular wave using monolithic function generator chip
Signal;VCO unit 21 uses voltage controlled oscillator chip.Work(subdivision 22 is using the T junction work(designed on high-frequency circuit plate
Divide device.Transmitter unit 23 includes 233 3 transmitting terminal frequency multiplication component 231, power amplifying segments 232 and transmitting antenna component portions
Point, wherein transmitting terminal frequency multiplication component 231 uses 35GHz varactor doublers chip and 140GHz quadrupler chips, power amplification portion
Part 232 uses 140GHz power amplifier chips, and transmitting antenna component 233 is using the four roads string designed on high-frequency circuit plate
Present antenna.Receiving unit 24 includes reception antenna component 244, low noise amplification component 243, zero intermediate frequency mixing unit 242 and connects
241 4 parts of receiving end frequency multiplication component, reception antenna component 244 are high-frequency electrical using the structure as transmitting antenna component
The four road series fed antennas designed on the plate of road, low noise amplification component 243 use 140GHz the low noise amplifier chips, zero intermediate frequency
Mixing unit 242 is realized using the four-time harmonic mixing structure based on Schottky diode design.Wherein, 140GHz quadruplers
Chip, 140GHz power amplifier chips and 140GHz the low noise amplifier chips are high frequency millimeter ripple chip.
Specifically, triangular wave unit 31 provides triangle wave voltage signal, low frequency (17.375- is formed by VCO unit 21
17.625GHz) Linear chirp, work(subdivision 22, which is close to, to be connected on after VCO unit 21, the low frequency that VCO unit 21 is exported
Linear chirp work(is divided into two-way, provides arrive transmitter unit 23 all the way, provide all the way to receiving unit 24 as LO (local oscillator)
Signal;Transmitter unit 23 includes 233 3 transmitting terminal frequency multiplication component 231, power amplifying segments 232 and transmitting antenna component portions
Point, low frequency Linear chirp is spread to 140GHz linear frequency sweep radar transceiver front-end modules by transmitting terminal frequency multiplication component 231
Transmitting pumping signal is amplified to the work(for meeting transmitter needs by working frequency range (139GHz-141GHz), power amplifying segments 232
Rate, and by transmitting antenna component 233 to external radiation millimeter-wave signal;24 prime of receiving unit is reception antenna component 244, after
Level is low noise amplification component 243 and zero intermediate frequency mixing unit 242, and reception antenna component 244 is used to receive faint reflection letter
Number, low noise amplification component 243, which docks received signal and is amplified, is input to zero intermediate frequency mixing unit 242, is mixed in zero intermediate frequency
In frequency component 242, the LO signals mixing formed with the signal that work(subdivision 22 provides after varactor doubler chip spread spectrum produces IQ
(orthogonal) two-way zero intermediate frequency signals.
Power supply unit 32 is used to provide respectively for triangular wave unit 31, VCO unit 21, transmitter unit 23, receiving unit 24
Voltage level;Triangular wave unit 31, VCO unit 21, transmitter unit 23, receiving unit 24 are individually powered and are decoupled from each other
Processing.
Above-mentioned triangular wave unit 31, VCO unit 21, work(subdivision 22, transmitter unit 23, receiving unit 24 and power supply unit
32, it is encapsulated in same PCB (printed circuit board (PCB)) circuit substrate 1.
Wherein, high-frequency circuit assembly 2 includes high frequency millimeter ripple chip 5, and the radio layer 11 of circuit substrate 1 is provided with chip peace
Hole 7 is filled, high frequency millimeter ripple chip 5 is installed in corresponding chip mounting hole 7.
More preferably mode, 5 upper surface of high frequency millimeter ripple chip is with 1 upper surface of circuit substrate in same level.Wherein, it is high
The rf inputs and RF output end of frequency millimeter wave chip 5 are using gold wire bonding technique access high-frequency circuit, high frequency millimeter
The rf inputs of ripple chip 5 connect other high-frequency electricals with the RF output end of high frequency millimeter ripple chip 5 by bonding gold wire line
Road component 2.Wherein, the gap between the rf inputs side of high frequency millimeter ripple chip 5 and corresponding chip mounting hole side wall
No more than 100um;Gap between the RF output end side of high frequency millimeter ripple chip and corresponding chip mounting hole side wall is not
More than 100um.
Specifically, 140GHz linear frequency sweeps radar transceiver front-end uses mixed pressure laminate encapsulation mode, select
RogersRO5880 thickness 127um high-frequency circuits plate and FR-4 thickness 1.6mm glass fibre epoxies plate carry out mixed pressure,
RO5880 thickness 127um high-frequency circuits plate still has excellent performance, FR-4 thickness 1.6mm plates under the module working frequency range
The introducing of material ensure that the mechanical hardness of whole module after pressing.
By high-frequency circuit assembly 2 with being separated among low frequency electrical component 3 by stratum, module high-frequency circuit assembly 2 is arranged
In RO5880 plates upper surface, including VCO unit 21, work(subdivision 22, transmitter unit 23 and receiving unit 24, module low-frequency electrical
Road component 3 is all disposed within FR-4 plates lower surface, including triangular wave unit 31 and power supply unit 32;And the following table of RO5880 plates
Face and the upper surface of FR-4 plates are stratum, both press together, and efficiently solve between high-frequency circuit and low-frequency channel
Coupling and interference.
Specifically, the high frequency millimeter swash frequency-scan radar receiving and transmitting front end module medium-high frequency millimeter wave chip uses circuit base
Plate radio layer perforate packaging technology so that chip upper surface is substantially at same level with high-frequency circuit plate upper surface, together
When chip radio frequency input terminal and RF output end and circuit substrate radio layer Edge Distance be 50um, greatly reduce gold wire bonding
Distance, solve the problems, such as chip radio frequency input and output matching and loss.
High-frequency circuit plate and glass fibre epoxy plate mixed pressure laminate encapsulation mode are used in the embodiment of the present invention,
The metal cavity waveguide type encapsulating structure that existing millimeter wave linear frequency sweep radar uses is instead of, it is linear to solve existing millimeter wave
The shortcomings that frequency-scan radar is complicated, bulky, weight is high, of high cost.Using mixed pressure laminate encapsulation mode, in small range
(< 50*50*5mm in space3), it have devised a kind of high frequency millimeter swash frequency-scan radar receiving and transmitting front end module, the structure side
Case is greatly reducing the existing size using metal cavity waveguide type encapsulating structure millimetre-wave radar at the same time, also reduces existing
The cost of millimeter wave linear frequency sweep radar transceiver front-end module, makes millimeter wave linear frequency sweep radar transceiver front-end to be conveniently used for milli
The fields such as metric wave range radar, automobile collision avoidance radar.
It the above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair
The limitation of the present invention, protection scope of the present invention should be subject to claim limited range.For the art
For those of ordinary skill, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, these change
Protection scope of the present invention is also should be regarded as into retouching.
Claims (10)
1. a kind of high frequency millimeter swash frequency-scan radar receiving and transmitting front end module, it is characterised in that including circuit substrate, be arranged in electricity
The high-frequency circuit assembly of base board upper surface and the low-frequency channel component for being arranged in circuit substrate lower surface, the circuit substrate from
Include radio layer, stratum and low frequency layer successively under, the circuit substrate is additionally provided with through hole;The high-frequency circuit assembly bag
High frequency millimeter ripple chip is included, the radio layer of the circuit substrate is provided with chip mounting hole, the high frequency millimeter ripple chip installation
In the chip mounting hole.
2. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 1, it is characterised in that the height
Frequency millimeter wave chip upper surface is with the circuit substrate upper surface in same level.
3. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 1, it is characterised in that the height
The rf inputs and RF output end of frequency millimeter wave chip are using gold wire bonding technique access high-frequency circuit.
4. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 1, it is characterised in that the height
Gap between the rf inputs side of frequency millimeter wave chip and corresponding chip mounting hole side wall is no more than 100um;It is described
Gap between the RF output end side of high frequency millimeter ripple chip and corresponding chip mounting hole side wall is no more than 100um.
5. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 1, it is characterised in that the electricity
Base board is pressed and formed by high-frequency circuit plate and glass fibre epoxy plate, the high-frequency circuit plate lower surface and the glass
Glass fiber epoxy plate upper surface is stratum.
6. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 1, it is characterised in that the height
Frequency circuit component includes VCO unit, work(subdivision, transmitter unit and receiving unit;The low-frequency channel component includes triangular wave
Unit and power supply unit;The triangular wave unit output terminal is electrically connected by through hole cabling with the VCO unit input terminal, described
VCO unit output terminal is electrically connected with the work(subdivision input terminal, first output terminal of work(subdivision and the transmitter unit
Input terminal is electrically connected, and second output terminal of work(subdivision is electrically connected with the receiving unit input terminal, and the power supply unit leads to
Through hole cabling is crossed to be electrically connected with the VCO unit, the transmitter unit and the receiving unit respectively, the power supply unit also with
The triangular wave unit is electrically connected.
7. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 6, it is characterised in that the hair
Penetrate transmitting terminal frequency multiplication component, power amplifying segments and transmitting antenna component that unit includes being sequentially connected electrically.
8. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 7, it is characterised in that the hair
Penetrating end frequency multiplication component includes 140GHz quadrupler chips, and the power amplifying segments include 140GHz power amplifier chips,
The 140GHz quadruplers chip and the 140GHz power amplifier chips are installed in corresponding chip mounting hole.
9. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 6, it is characterised in that described to connect
Receive receiving terminal frequency multiplication component, zero intermediate frequency mixing unit, low noise amplification component and reception antenna that unit includes being sequentially connected electrically
Component.
10. high frequency millimeter swash frequency-scan radar receiving and transmitting front end module according to claim 9, it is characterised in that described
Low noise amplification component includes 140GHz the low noise amplifier chips, and the 140GHz the low noise amplifier chips, which are installed on, to be corresponded to
Chip mounting hole in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711364262.6A CN107918111A (en) | 2017-12-18 | 2017-12-18 | High frequency millimeter swash frequency-scan radar receiving and transmitting front end module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711364262.6A CN107918111A (en) | 2017-12-18 | 2017-12-18 | High frequency millimeter swash frequency-scan radar receiving and transmitting front end module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107918111A true CN107918111A (en) | 2018-04-17 |
Family
ID=61893409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711364262.6A Pending CN107918111A (en) | 2017-12-18 | 2017-12-18 | High frequency millimeter swash frequency-scan radar receiving and transmitting front end module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107918111A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109660283A (en) * | 2018-12-06 | 2019-04-19 | 成都中宇微芯科技有限公司 | A kind of load antenna receiving and transmitting front end chip |
| CN109922597A (en) * | 2019-03-21 | 2019-06-21 | 中国电子科技集团公司第二十九研究所 | A kind of highly reliable band horizontal transition structure |
| CN110739913A (en) * | 2019-06-13 | 2020-01-31 | 中国工程物理研究院电子工程研究所 | ultra wide band schottky frequency doubler structure of second harmonic enhancement mode |
| CN111090076A (en) * | 2020-01-22 | 2020-05-01 | 无锡威孚高科技集团股份有限公司 | A kind of millimeter wave radar radio frequency front-end circuit structure and manufacturing method thereof |
| CN113271709A (en) * | 2021-03-25 | 2021-08-17 | 中国电子科技集团公司第二十九研究所 | Multilayer printed circuit laminated structure and packaging structure of metal core plate |
| CN113552540A (en) * | 2021-08-24 | 2021-10-26 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional integrated micro-assembly radar front-end module |
| CN118837835A (en) * | 2024-09-23 | 2024-10-25 | 成都天成电科科技有限公司 | 90-96GHz FMCW radar suite |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109660283A (en) * | 2018-12-06 | 2019-04-19 | 成都中宇微芯科技有限公司 | A kind of load antenna receiving and transmitting front end chip |
| CN109660283B (en) * | 2018-12-06 | 2022-02-01 | 成都中宇微芯科技有限公司 | Chip-mounted antenna transceiving front-end chip |
| CN109922597A (en) * | 2019-03-21 | 2019-06-21 | 中国电子科技集团公司第二十九研究所 | A kind of highly reliable band horizontal transition structure |
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| CN110739913A (en) * | 2019-06-13 | 2020-01-31 | 中国工程物理研究院电子工程研究所 | ultra wide band schottky frequency doubler structure of second harmonic enhancement mode |
| CN110739913B (en) * | 2019-06-13 | 2023-05-09 | 中国工程物理研究院电子工程研究所 | Second harmonic enhancement type ultra-wideband Schottky frequency doubler structure |
| CN111090076A (en) * | 2020-01-22 | 2020-05-01 | 无锡威孚高科技集团股份有限公司 | A kind of millimeter wave radar radio frequency front-end circuit structure and manufacturing method thereof |
| CN113271709A (en) * | 2021-03-25 | 2021-08-17 | 中国电子科技集团公司第二十九研究所 | Multilayer printed circuit laminated structure and packaging structure of metal core plate |
| CN113552540A (en) * | 2021-08-24 | 2021-10-26 | 中国科学院上海微系统与信息技术研究所 | Three-dimensional integrated micro-assembly radar front-end module |
| CN118837835A (en) * | 2024-09-23 | 2024-10-25 | 成都天成电科科技有限公司 | 90-96GHz FMCW radar suite |
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Application publication date: 20180417 |