CN107916406A - Method and magnetic control means for bipolar magnetron sputtering - Google Patents
Method and magnetic control means for bipolar magnetron sputtering Download PDFInfo
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- CN107916406A CN107916406A CN201710919452.3A CN201710919452A CN107916406A CN 107916406 A CN107916406 A CN 107916406A CN 201710919452 A CN201710919452 A CN 201710919452A CN 107916406 A CN107916406 A CN 107916406A
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 37
- 238000000576 coating method Methods 0.000 claims abstract description 104
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 239000011248 coating agent Substances 0.000 claims abstract description 101
- 238000004544 sputter deposition Methods 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000013077 target material Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 239000000376 reactant Substances 0.000 claims description 15
- 229910000765 intermetallic Inorganic materials 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000004886 process control Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000009257 reactivity Effects 0.000 claims description 5
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- -1 wherein Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000007667 floating Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 51
- 230000008569 process Effects 0.000 description 15
- 238000009413 insulation Methods 0.000 description 10
- 230000032258 transport Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010955 niobium Substances 0.000 description 4
- 229910052758 niobium Inorganic materials 0.000 description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 210000002381 plasma Anatomy 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910017107 AlOx Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002320 enamel (paints) Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005404 monopole Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Different forms of implementation is related to a kind of bipolar sputtering mode, used gross electric capacity more effectively can be converted into coating speed by it.For this reason, using a kind of method for bipolar magnetron sputtering, it is for example with following steps：According to for sputtering the bipolar sputtering mode of magnetic control target target target material electrical power is supplied for two magnetic control targets, wherein, reversal is carried out with the frequency in the scope from 10Hz to 1000Hz in bipolar sputtering mode, and substrate surface coating, its floating coat are carried out by by the target material that magnetic control target sputters in bipolar sputtering mode with coating material.
Description
Technical field
Different embodiments is related to a kind of method for bipolar magnetron sputtering and a kind of magnetic control means.
Background technology
In general, the magnetic control means being used for backing coating can be used.It is, for example, possible to use so-called sputtering technology is (cloudy
Pole sputters), so as in vacuum technology room to a substrate or multiple backing coatings (for example, referred to as splash coating or sputtering is heavy
Product).Magnetic control means can be provided so that magnetic control means can change an operational mode from multiple possible operational modes.
These operational modes are individually or group can for example have with ground：It is adjusted or unregulated reactive sputtering, non-reacted
Sputtering, d.c. sputtering (DC sputterings), exchange sputtering (AC is sputtered, such as MF (intermediate frequency) sputterings or HF (high frequency) sputterings), pulsed
D.c. sputtering is (for example, high-power impulse magnetron sputtering；Abbreviation HiPIMS or HPPMS).Magnetic control means usually can be specifically
Match, or be matched with the operational mode to be changed so that corresponding operational mode can be changed optimally.Here, for example
Used target material can also work in the selection accordingly operational mode for magnetron sputtering.
Different forms of implementation is for example based on as follows：Sputtering mode is provided, which can realize metal layer or pottery
The high effective deposition of enamel coating, wherein the layer has the ratio resistance less than 1E12 Ω cm.According to different forms of implementation, mould is sputtered
Formula is the bipolar sputtering mode in low-frequency range, such as in about 10Hz into the scope of about 1000Hz.In bipolar sputtering
In pattern, it is denoted as using at least two magnetic control targets as electrode pair.Electrode pair is controlled or is adjusted to so that is handed over for sputter procedure
Cathode and anode are alternately provided.For this reason, apply voltage (i.e., between the two electrodes) between the two magnetic control targets, should
Polarity of the voltage with alternation is (for example, the mixing electricity of the DC voltage of pure AC voltage or application with alternating voltage and superposition
Pressure).Always it is used as anode sometimes in the magnetic control target of positive polarity and is always used as the moon sometimes in the magnetic control target of negative polarity
Pole.In sputter procedure, sputtering is always at the magnetic control target of negative polarity.Since polarity last converts, two magnetic control targets are sputtered
Mark and exempt aggregation.Therefore, freely (non-coating) anode is also constantly provided so that can also sink by sputter procedure
The material of product electric insulation.
It has been recognized that such as ceramic material of the sputter procedure although suitable for deposition insulation, but the material of high-insulation
(such as ratio resistance is more than 1E12 Ω cm, for example, more than 1E13 Ω cm or more than 1E14 Ω cm) may not efficiently be splashed
Penetrate.For example, the material of high-insulation for example SiO2Or Al2O3Conventionally deposited by MF sputterings.
In to the DC of electrically insulating material sputterings (for example, being sputtered in monopole), following problem is generally occurred within, be electrically insulated material
Material fills up anode (also referred to as " disappearance " anode).This by sputtering mode as described herein at least for less than
It can be prevented from for the coating material of the ratio resistance of 1E12 Ω cm.Furthermore, it is possible to by bipolar sputtering mould as described herein
Formula can be compared to situation (such as traditionally under the frequency more than 20kHz perform) higher in similar MF sputter procedures
Coating speed.Furthermore, it is possible to can be compared to the situation of similar MF sputter procedures by sputtering mode as described herein
Realize the lower power input entered in substrate to be coated.For example, can be by bipolar sputtering mode as described herein
It is accomplished that, compared to the magnetron of the thermal energy input generally less than 6% such as 3% to 6% entered in substrate to be coated
Corresponding general power.
Intuitively, more effectively used gross electric capacity can be turned by bipolar sputtering mode as described herein
Turn to coating speed, i.e. enter substrate in thermal energy the input phase with the case of can realize higher coating speed or
Less thermal energy can be input in substrate to be coated in the case that coating speed is identical so that even if such as sensitive substrate
Such as plastic supporting base or can be by efficiently coating with polymer or the substrate that is made of it.
The content of the invention
According to different forms of implementation, the method for bipolar magnetron sputtering can have as follows：According to for sputtering magnetic
The bipolar sputtering mode for controlling the target material of target supplies electrical power for two magnetic control targets, wherein in bipolar sputtering mode
Reversal is carried out with the frequency in the scope from 10Hz to 1000Hz, and with coating material to substrate surface coating, its
In, coating is carried out by by the target material that magnetic control target sputters in bipolar sputtering mode.
According to different forms of implementation, coating material can have the ratio resistance less than 1E12 Ω cm.
According to different forms of implementation, target material can be metal, and can carry out bipolar magnetron sputtering so that
Coating material is metal.Intuitively, metal layer can be deposited by metal target.For this reason, rare gas can for example be used only
(for example, argon gas) or only it is used for bipolar magnetron sputtering as working gas by the mixture that rare gas is formed.According to different
Form of implementation, metal can also be the metal alloys that various metals are formed.Metal for example can be silver, copper, chromium and/or aluminium or
With silver, copper, chromium and/or aluminium.
According to different forms of implementation, target material can be metallic compound, and can carry out bipolar magnetic control and splash
Penetrate so that coating material is metallic compound.Intuitively, metal compound layer can be deposited by metallic compound target.For
This, such as rare gas (for example, argon gas) can be used only or only used by the mixture that rare gas is formed as working gas
In bipolar magnetron sputtering.
Metallic compound for example can be ceramics, such as with metal oxide, metal nitride and/or metal oxynitride
Compound is made of metal oxide, metal nitride and/or metal oxynitrides.Metal for example can be titanium, chromium, niobium, zinc
And/or tin or there is titanium, chromium, niobium, zinc and/or tin.
According to different forms of implementation, the method for (bipolar) magnetron sputtering can also have conveying reactant gas
To carry out the bipolar magnetron sputtering of reactivity.Target material then can have metal (such as titanium, chromium, niobium, zinc and/or tin or by
It is formed, and can carry out bipolar magnetron sputtering so that the change that coating material is or is formed with metal and reactant gas
Compound.For example, reactant gas can be able to be or with metal oxide with oxygen and coating material.For example, reaction
Property gas can be able to be or with metal nitride with nitrogen and coating material.For example, reactant gas can have
Oxygen and nitrogen and coating material can be or have a metal oxynitride.
In addition, target material can have metallic compound, wherein coating material is or with by metallic compound and instead
The compound that answering property gas is formed.For example, reactant gas can be additionally embedded in metallic compound or anti-with its chemistry
Should.
According to different forms of implementation, the method for bipolar magnetron sputtering can have as follows：In Vacuum coating device
Coating area in transport substrate, wherein substrate has plastics or is made of it；According to the sputtering magnetic control target in coating area
The bipolar sputtering mode of target material supply electrical power for two magnetic control targets, wherein polarity becomes in bipolar sputtering mode
Change and carried out with the frequency in the scope from 10Hz to 1000Hz so that the substrate surface of substrate carrys out coating with coating material, makes
The thermal energy input that substrate must be entered is less than the 6% of electrical power and is applied with the coating speed more than 60nmm/min
Layer.
Such as can by chilling roll carry out substrate transport, for cool down substrate (substrate for example can be it is flexible,
Such as in form membrane, also referred to as silk-screen deposition).Here, substrate can with chilling roll directly contact be transported and from
The opposed side coated of chilling roll.
According to different forms of implementation, the magnetic control means for bipolar magnetron sputtering can have as follows：Two magnetic control targets
Mark, it is with target material；For the process control equipment for being deposited on substrate the layer of target material, wherein substrate has
Plastics, wherein process control equipment are built as so that the two magnetic control targets are according to bipolar sputtering mode with less than 1000Hz
Frequency operation, and the layer of the ratio resistance with less than 1E12 Ω cm is deposited on substrate by target material.
According to different forms of implementation, the method for bipolar magnetron sputtering can have as follows：In vacuum processing chamber
Substrate is transported in coating area, which has polymer；By magnetron to backing coating, wherein institute in coating area
Stating coating has：Magnetron is run with electrical power according to bipolar sputtering mode, and wherein bipolar sputtering mode has：Scope
Reversal frequency from 10Hz to 1000Hz；Into the thermal energy input of the electrical power less than 6% of substrate；Be equal to or
Coating speed more than 60nmm/min.
According to different forms of implementation, the method for bipolar magnetron sputtering can have as follows：In vacuum processing chamber
Substrate is transported in coating area, which has polymer；By magnetron to backing coating, wherein institute in coating area
Stating coating has, and drives magnetron according to bipolar sputtering mode with electrical power, and wherein bipolar sputtering mode has：Have
The alternating voltage of reversal frequency of the scope from 10Hz to 1000Hz；Energy into the electrical power less than 6% of substrate is defeated
Enter；With the coating speed more than 60nmm/min.
Brief description of the drawings
Embodiment is shown in the drawings and is illustrated in greater detail below.
In the accompanying drawings：
Fig. 1 shows the explanatory view of the magnetic control means according to different forms of implementation；
Fig. 2 shows the indicative flowchart of the method for magnetron sputtering according to different forms of implementation；
Fig. 3 shows the indicative flowchart of the method for magnetron sputtering according to different forms of implementation；
Fig. 4 A to 4D show the different techniques spies of the method for magnetron sputtering according to different forms of implementation
Property；
Fig. 5 A show the magnetic control means according to different forms of implementation with explanatory view；And
Fig. 5 B comparatively show the substrate temperature profile for different sputtering modes.
Embodiment
Refer to appended attached drawing in follow-up detailed description, the part of the attached drawing constitution instruction and described
Specific form of implementation is shown in order to illustrate, the present invention can be performed in the form of implementation in attached drawing.In this side
Face, with reference to described (multiple) attached drawing be oriented so that with direction term for example " on ", " under ", "front", "rear", " to
Before ", " backward " etc..Because the component of embodiment can be positioned with multiple and different orientations, direction term is used for
Illustrate and not without any restriction.It is to be understood that other embodiments can be used and can carry out in structure or patrol
Change on volume, without departing from protection scope of the present invention.It is to be understood that as long as no distinguishingly other explanation, it is possible to
The feature of different exemplary embodiment described here is combined with each other.Therefore, the following detailed description can not
Restricted meaning is interpreted as, and protection scope of the present invention is limited by the claim enclosed.
Within the scope of this specification, term " connection ", " connection " and " coupling " is used to describe direct and indirect
Connection, directly or indirectly connection and directly or indirectly coupling.In the accompanying drawings, it is as long as appropriate, it is identical or
Similar element is equipped with identical reference numeral.
Fig. 1 show in a schematic the magnetic control means 100 according to different forms of implementation.The magnetic control means be configured into
The bipolar magnetron sputtering of row.According to different forms of implementation, the magnetic control means 100 can have with two magnetic control target 102a,
The magnetron 106 of 102b.Described magnetic control target 102a, 102b have target material or are made of target material.In magnetic control means
In 100 operation, sputtering target material and target material are used for coating material 122 to 120 coating 110 of substrate.Coated areas
Domain 110b for example can be provided or be provided in vacuum processing chamber.Substrate 120 is for example transported through true by transporting equipment
Empty process chamber is at least partly transported in coating area 110b and is transported out from coating area 110b.
It should be understood that magnetron 106 is correspondingly configured to keep, cool down and make electrical contact with magnetic control target 102a, 102b.
According to different forms of implementation, magnetron 106 can be double hose magnetron and have target 102a, 102b two tubular.
Double hose magnetron can correspondingly be configured to make the two tubular target 102a, 102b rotations or driving.
During the operation of magnetic control means 100, the surface 120o that coating material 122 is deposited on substrate 120 (is also referred to as served as a contrast
Basal surface) on (for example, the target material that is sputtered condenses on the surface of a substrate).According to different forms of implementation, can perform
The bipolar sputtering of reactivity or the bipolar sputtering of non-reaction equation.Non- reaction equation sputtering in, such as can use working gas (such as
Argon gas), so as to sputtering target material, wherein working gas and it is not embedded into the layer 122 being deposited on substrate 120.Therefore,
Such as metal layer or semimetal layer can be deposited on substrate 120.In reactive sputtering, at least one reactant gas quilt
It is added to working gas or additionally at least one reactant gas is introduced into coating area 110b so that the target being sputtered
Mark material is chemically reacted with reactant gas and reaction product is deposited on substrate 120 as layer 122 or on substrate 120
Forming layer 122.
Working gas and/or reactant gas can for example be carried by air transporting arrangement 112 in coating area 110b
For or be provided.By the corresponding gas pressure being set in coating area power adjusting can be carried out to magnetron 106.
In addition, power can also be adjusted based on electric current and/or voltage.It can also determine in coating area 110b plasmas
Stoichiometry, such as determined by optical emission spectroscopy, and gas conveying and/or power tune can be carried out based on this
Save (such as part as process control).
According to different forms of implementation, the process control accordingly built can be used for depositing on the layer 122 of target material
110 on substrate 120 so that layer 122 is according to predefined characteristic (such as stoichiometry, layer thickness, layer form, electric conductivity
Deng) deposit.
The substrate 120 of forming layer 122 can for example have plastics or polymer or is made of it thereon.Substrate 120 is for example
Can be film (for example, thin polymer film).Intuitively, magnetic control means 100 can be constructed as, and handle the substrate (example of sensitivity
Such as, thin substrate and/or temperature sensitive substrate).For this reason, process control can be constructed as or be built as so that the two
Magnetic control target 102a, 102b is run according to bipolar sputtering mode with the frequency less than 1000Hz.For this reason, power feedway 104
It can correspondingly build and be coupled with magnetic control target 102a, 102b.
Bipolar sputtering mode can for example have at least one frequency for 10Hz.Here, voltage must have polarity to become
Change.The symmetrical treatment on two magnetic control targets 102a, 102b, voltage can be symmetrically provided or is provided in order to obtain, i.e.,
Pure AC voltage (for example, the maximum of two polarity is identical, i.e., in pure oscillation form).
Power feedway 104 can have at least one generator, (that is, be for providing voltage for the two electrodes
Magnetic control target 102a, 102b) and provided accordingly between the magnetic control target 102 accordingly as cathode and anode, 102b
Electric current.The electric current flowed between the anode and the cathode when applying voltage every time can be with the process gas in sputter process room
(such as its composition and/or its pressure) is related.The process gas is with least one working gas and alternatively with least
A kind of reactant gas.Therefore, form at least one generator and for the different operation of the conveying of process gas
Mode or control possibility and/or adjustment possibility, to set operating point.
In order to maintain sputter procedure, anode is needed near cathode so that formed generally between cathode and anode
Electric current flowing.Intuitively, always there was only one in the two magnetic control targets 102a, 102b every time to be sputtered, and another is carried
For anode.This can for example realize the power adjusting or Power Control of sputter procedure.Here, power for example can with it is corresponding
Gas pressure in area of space is related, and plasma is produced in the area of space.Sputtering power can be along cathode and position
Pass is equipped with, this can be compensated by matched gas conveying etc. in additional space, wherein the cathode such as Longitudinal extending (example
Such as, the so-called target pipe of tubular cathode or tubular type magnetron).The cathode of Longitudinal extending is usually horizontal with its longitudinal extension part
Set in substrate transport direction, such as on the surface to be coated of substrate.For example, tubular type magnetron phase in coating chamber
Set for substrate transport system so that the pipe axis or rotation axis of tubular cathode are oriented transverse to substrate transport direction.
In sputtering, backing coating can be carried out as follows with the layer with equivalent layer characteristic：Sputter equipment is placed in fortune
In row point or operating status and/or it is maintained in operating point.Operating point can determine the required operating parameter of sputter equipment
(such as substrate transport speed, target rotating speed, generator size, gas pressure, material etc.) so that corresponding layer can be manufactured,
The layer have the corresponding desired or required corresponding layer of characteristic or according to default characteristic (for example, the ratio resistance of layer,
The chemical composition of layer, the layer thickness profile of layer on a surface of the substrate, optical characteristics of layer etc.).Here, sputter procedure with
The deviation of operating point can sputtered for whole sputter procedure (for example, by power adjusting) and/or partly in the overall situation
Compensated in the region of process chamber, such as by conveying process gas (working gas and/or reactivity in a manner of modulated
Gas), convey by process gas and/or gas feed adjustment in the relevant range of sputter process room.
In the magnetron of Longitudinal extending, process gas (working gas and/or reactant gas) can be by along vertical
Magnetron, wherein magnetron are conveyed in a manner of modulated to the gas conveying (gas passage of segmentation) that extension is segmented
Operating point can be locally by transported gases affect (setting or adjust).Intuitively, in order to sink by reactive sputtering
The uniform layer of product may require that each section of the magnetron cathode for magnetron supplies different gas (for example, with different gas
Body composition and/or different pressure or different gas flows).In other words, the process gas can introduce magnetron cathode with
In processing space between substrate to be coated so that the space density of process gas or process gas part point
Cloth (or spatial distribution) can realize on substrate to be coated uniform layer deposition (for example, on whole substrate width or
In whole substrate surface).
According to different forms of implementation, can sink by the target material of magnetic control target 102a, 102b on substrate 120
Layer 122 of the product with the ratio resistance less than 1E12 Ω cm.Deposition has to be greater than 1E13 Ω cm or is more than more than 1E12 Ω cm
The layer of the ratio resistance of 1E14 Ω cm may be since used low frequency be without efficiently or even cannot.
According to different forms of implementation, cathode (also referred to as magnetron cathode) is configured to tubular cathode, wherein, magnetic
Control device can be arranged within tubular cathode.Intuitively, which can be the tubular cathode of double hose magnetron
The part of (also referred to as rotatable dual magnetron, RDM).Tubular cathode can for example have tubular carrier, in the carrier
On can be fixed with (such as brittle and/or frangible) target material or tubular cathode and can have the target material of tubular structure
Expect (such as the pipe being made of target material).As an alternative, magnetic control target 102a, 102b of plane can be used, wherein in the feelings
Under condition magnetic control means can be arranged on magnetic control target 102a, 102b on the side of coating area.
Tubular type magnetic control means can always have two magnetic control end blocks, for keeping (or rotatable supporting part) two
A tubular cathode (and such as magnetic control means), and for supplying such as cooling water and electric energy (work(for tubular cathode
Rate) and make tubular cathode around its pipe axis drives (or rotation).
For example, tubular type magnetic control means can be provided, it has two tubular the moon on Pit cover (so-called magnetic controller lid)
Pole.In the case, the chamber housing of vacuum chamber can have corresponding opening, which can cover by Pit cover,
So that chamber housing can be maintained within chamber housing with vacuum-tight closing and tubular type magnetic control means, with chamber shell
Coating is carried out to substrate within body.As an alternative, tubular type magnetic control means can be installed in vacuum chamber, it has on chamber wall
One tubular cathode or two tubular cathodes.
Fig. 2 shows the indicative flowchart of the method 200 for bipolar magnetron sputtering according to different forms of implementation
(referring to Fig. 1).Method 200 for bipolar magnetron sputtering is for example with following steps：210, according to for sputtering magnetic control target
The bipolar sputtering mode for marking the target material of 102a, 102b supplies electrical power for two magnetic control targets 102a, 102b, wherein
Reversal is carried out with the frequency in the scope from 10Hz to 1000Hz in bipolar sputtering mode, and 220, with coating
Material 122 exists substrate surface 120o coatings, its floating coat 110 by the target material sputtered by magnetic control target 102a, 102b
Carried out in bipolar sputtering mode.
Such as supply electric work is carried out to magnetic control target 102a, 102b by power feedway 104 as described herein
Rate.Power feedway 104 for example can be constructed as so that the frequency (such as frequency of sinusoidal voltage) of reversal can be with
It is variably set in the scope of 10Hz to 1000Hz.
Fig. 3 shows the indicative flowchart of the method 300 for bipolar magnetron sputtering according to different forms of implementation
(referring to Fig. 1).Method 300 for bipolar magnetron sputtering is for example with following steps：310, in the painting of Vacuum coating device
Substrate is transported in layer region, and 320, according to the bipolar sputtering that magnetic control target target target material is sputtered in coating area
Pattern supplies electrical power for two magnetic control targets, wherein reversal is with from 10Hz to 1000Hz in bipolar sputtering mode
Scope in frequency carry out so that the substrate surface of substrate carrys out coating with coating material so that the thermal energy into substrate is defeated
Enter to be less than the 6% of electrical power and coating is carried out with the coating speed more than 60nmm/min.
As shown in hereinafter in Fig. 4 A to 5B, bipolar in the scope from 10Hz to 1000Hz of frequency splashes
Emission mode is conducive to the thermal energy input and the ratio of the gross electric capacity of magnetron 106 into substrate 120.Here, described
In frequency range, the general power of magnetron is substantially proportional to sedimentation rate (also referred to as making coatings speed).Therefore, entering
When the energy input of substrate 120 is identical, it is possible to achieve optimal sedimentation rate, the wherein energy input can be for example by substrates
Material (such as polymer) limits.
The general power of magnetron 106 can be by the electrical power (i.e. effective power) converted of power feedway 104
To determine.Energy input into substrate can determine that its mode is with calorimetric formula：Such as determine the hair of the substrate in coating
Heat, wherein in the case where considering the thermal capacity of substrate, the geometry of substrate and can in the case of in view of substrate material
To determine inputted energy fluence (such as heat).
Coating speed can be determined by layer thickness measurement after coating in the case of known travelling speed.With
Afterwards, coating speed can illustrate as the product of layer thickness and travelling speed, such as unit is [nmm/min].To substrate
During coating, substrate is for example transported through coating area with the travelling speed of 1m/min, is 1nmm/min's in coating speed
In the case of deposit thickness be 1nm layer.When substrate is faster transported, layer thickness accordingly becomes smaller.
Fig. 4 A illustrate the frequency f into the energy input (Y-axis) in substrate and corresponding used bipolar sputtering mode
The correlation of (X-axis).According to different forms of implementation it has been recognized that when it is bipolar sputter at it is low-frequency in the case of carry out when, can
Inputted with the thermal energy being lowered into substrate.
It is related to the frequency f's (X axis) of corresponding used bipolar sputtering mode that Fig. 4 B illustrate coating speed (Y-axis)
Property.According to different forms of implementation it has been recognized that when carrying out bipolar sputtering in the case of low-frequency, coating can be increased
Speed.Exemplarily it is directed to TiO2Sputter procedure, determines the contrast of coating speed and energy input.
Fig. 4 C are illustrated enters lining in the case of the different frequency f (X-axis) of corresponding used bipolar sputtering mode
The different measurements of the thermal energy input at bottom (Y-axis), and contrastively illustrate in conventional unipolar DC sputtering modes or conventional unipolar
Enter the energy input in substrate in MF sputtering modes.In order to illustrate, relevant relative energy input is shown in fig. 4d
(unit %), for example, for being run with the magnetron 106 that two tubular targets and general power are 25kW in the case of.
The relative energy for the acting on substrate input (ratio for accounting for magnetic control power) of unit interval shown in Fig. 4 D with
TiO2Exemplified by illustrate, the substrate is by ceramic TiOxTarget sputters.
The bipolar sputtering mode of low frequency as described herein can be used for thermally sensitive substrate 120 (such as polymer
Film) coating.This can for example be transported in coating by roller 506, that as illustrated in fig. 5 with explanatory view
Sample.Roller 506 can be cooling or be cooled.Substrate 120 can be directly placed on roller 506 and therefore be connect by entity
Touch to cool down.
According to different forms of implementation, which can have magnetron 106, such as double hose magnetron.
In addition, magnetic control means 100 can have multiple magnetrons 106, such as multiple double hose magnetrons.
According to different forms of implementation, at least one magnetron 106 of magnetic control means 100 can be used, so as to by
120 coating of substrate that roller 506 transports.If 120 coating of substrate, these magnetrons can be enclosed using multiple magnetrons 106
Set or be set around roller 506.Here, small structure space can be beneficial to 100 Effec-tive Function of magnetic control means.According to difference
Form of implementation, the one of magnetron 106 or multiple magnetrons 106 of magnetic control means 100 are without independent (additional) sun
Pole so that can efficiently use the structure space around roller 506.Meanwhile can be with sedimentary, the layer is compared to height
Traditional bipolar sputtering method of frequency (being greater than 10kHz) has improved layer characteristic and/or can more efficiently deposit this
A little layers (for example, in a manner of protecting substrate and/or with high coating speed).
Fig. 5 B illustrate the spatial temperature distribution on substrate 120 for magnetic control means 100 illustrated in fig. 5
(along x position).Measured along the position in x directions along the circumference of roller 506.
As shown in figure 5b, by bipolar sputtering mode as described herein (such as the frequency for 500Hz
Shown in rate) can by the underlayer temperature 500b in coating compared in AC-MF sputtering modes 500a magnetron 106 it is total
The identical situation of power is kept as lower.
Spatial distribution into the energy input in substrate 120 is related to the spatial distribution of coating speed 500r.
Fig. 5 B illustrate the energy fraction being input in substrate 120 (such as PET film), to be applied by silk screen applicator
(referring to Fig. 5 A), the form of Temperature Distribution illustrates during layer.Travelling speed is (for example, the rotation measured on the surface of substrate 120
Speed) can be, for example, for example 2m/min in about 1m/min into the scope of about 10m/min.Chill-roll temperature for example may be used
With less than 5 DEG C, such as 0 DEG C.
According to different forms of implementation, there has been described the sputtering mode for magnetron 106 or magnetic control means 100, uses
In physical vapour deposition (PVD) (PVD) of the execution in Vacuum coating device.Here, the sensitive such as polymer film of substrate 120, half
Conductor etc. can be with coated, because it is minimum to be inputted into the thermal power in substrate in the sputtering mode, while coating is fast
Rate is sufficiently high.Meanwhile magnetron 106 be able to can also use in the sputtering mode under narrow situation, because
For the anode that need not be added due to bipolar sputtering mode.
Conventionally, when sputtering dielectric medium, simple DC electric discharges generally can not ensure stable process control, because in DC moulds
Thus anode needed for formula also disappears with insulation mode coating and.Conventional solution, which for example provides, utilizes double magnetic
The AC-MF sputterings of keyholed back plate.By the conventional frequency for using 20kHz-70kHz, common process (SiO2、TiO2、Nb2O5、
SnO2Deng) stabilization can be showed, but be not optimal.
Routinely, DC sputter procedures have the coating speed of higher compared with AC-MF sputter procedures.It has been recognized that the difference
It is different be due to magnetron AC run during polarity and electric discharge scratch start again when loss cause.These losses cause
Energy dissipation or additional fever in the surrounding environment of magnetron, and the thus also energy in the surrounding environment of substrate
Scatter and disappear or generate heat.
The appropriately selected of frequency when double hose magnetron is run can reduce the loss and thus improve coating speed
Rate and the energy input in substrate is lowered into, as described here.
According to different forms of implementation, describe, AC sputtering by dual magnetron in the case of frequency is low-down (
In the scope of about 10Hz to about 1000Hz) it can be applied in ceramics and metal processing.
According to different forms of implementation, the coating of insulation can come by the bipolar sputtering mode of low frequency as described herein
Produce, the layer of these insulation has the ratio resistance less than 1E12 Ω cm, such as the layer has SnO2、 In2O3、TiO2, ZnO etc.
Or it is made of it.
In addition it is also possible to the layer of conduction is produced by the bipolar sputtering mode of low frequency as described herein, such as layer has
Silver, aluminium, copper, chromium etc. are made of it.
In addition it is also possible to it is (so-called to produce conductive oxide by the bipolar sputtering mode of low frequency as described herein
), such as ITO (tin indium oxide) or ZAO (zinc oxide aluminum) layer TCO.
According to different forms of implementation, magnetron 106 can be run by current supply arrangement 104, be supplied in electric current
Frequency can be as the Parameters variation or setting that can freely change in device.This is for example vibrated conventional use of based on MF
It is impossible in the current supply arrangement of device/MF wave filters.It may be thus possible, for example, to several meters per minute in equipment for coating film
The speed of scope uniformly also with tens hertz to hundreds of hertz of frequency coating without striped.
The layer of high-insulation for example has or by SiO2、SiOxNy、AlOx、AlOx(N) form, such as cannot efficiently with
Sputtering mode as described herein produces, because the low frequency of sputtering mode cannot allow operation or because the deposition of stabilization
It can become poorly efficient (for example, because coating speed is too small).Such as, it may appear that so-called electric arc, because the layer of high insulation is deposited on
Form on target and too quickly insulation.
According to different forms of implementation, there is provided sputter procedure, is not required single anode in the sputter procedure, this example
Such as have the following advantages that：Save structure space (plasma slab for reaching anode need not be used for)；Small target spacing is
Feasible；Anode maintenance/cleaning is not required；Simplify the installation of magnetron；Anode cooling cycle is not required.Meanwhile realize with
The approximately uniform process conditions of DC direct currents and layer characteristic.
Too low frequency is, for example, less than that 10Hz can produce band on substrate, i.e. coating rate distribution spatially can not
Uniformly, this is undesirable for different applications.
As described here, can be deposited using the bipolar sputtering mode with the frequency less than 1000Hz
Copper target target copper, wherein, can be realized relative to MF sputtering modes high 30% coating speed.Here, sputtered compared in MF
Less thermal power can be input in pattern in substrate.For example, it can be inputted compared to the thermal power entered in substrate small
In 6% electrical power (there is the tolerance less than 0.5% respectively), such as 3% to 6% or 4% to 6%.
As described here, can be deposited using the bipolar sputtering mode with the frequency less than 1000Hz
Ceramic alumina titanium target target titanium oxide, wherein can realize high 10% coating speed relative to MF sputtering modes.Here, phase
Less thermal power can be input to compared with MF sputtering modes in substrate.For example, compared to the hot merit entered in substrate
Rate can input the electrical power (having the tolerance less than 0.5% respectively) less than 6%, such as 3% to 6% or 3% to 4%.
As described here, can be deposited using the bipolar sputtering mode with the frequency less than 1000Hz
The niobium oxide of ceramic alumina niobium target, wherein can realize high 16% coating speed relative to MF sputtering modes.Here, phase
Less thermal power can be input to compared with MF sputtering modes in substrate.For example, compared to the hot merit entered in substrate
Rate can input the electrical power (having the tolerance less than 0.5% respectively) less than 6%, such as 3% to 6% or 4% to 6%.
Here, when depositing the above material of exemplary description, it is possible to achieve sufficiently high definitely coating speed, example
Such as larger than 60nmm/min,
According to different forms of implementation, compared to conventional MF sputtering methods, by using this kind of described for double
Pole magnetron sputtering is directed to the feelings of material oxidation titanium (such as TiOx), niobium oxide (such as NbOx) and copper (Cu) in identical electrical power
The energy input into the smaller of substrate can be realized under condition and realizes the coating speed of raising.Two different measurement sequences
Experiment fiducial value exemplarily collect in table 1 below, wherein the method (bipolar LF) for bipolar magnetron sputtering is in this situation
Under carried out under the frequency of such as 0.5kHz.
(table 1).
Claims (11)
1. a kind of method for bipolar magnetron sputtering, this method has：
Electrical power is supplied for two magnetic control targets according to for sputtering the bipolar sputtering mode of magnetic control target target target material, its
In, in bipolar sputtering mode reversal with the scope from 10Hz to 1000Hz frequency carry out, and
With coating material to substrate surface coating, wherein, coating is splashed by by the target material that magnetic control target sputters bipolar
Carried out in emission mode.
2. the method according to claim 1 for bipolar magnetron sputtering,
Wherein, coating material has the ratio resistance less than 1E12 Ω cm.
3. the method according to claim 1 or 2 for bipolar magnetron sputtering,
Wherein, the target material is metal, and wherein described coating material is metal.
4. the method according to claim 1 or 2 for bipolar magnetron sputtering,
Wherein, the target material is metallic compound, and wherein described coating material is metallic compound.
5. the method according to claim 1 or 2 for bipolar magnetron sputtering, has in addition：
Reactant gas is conveyed to the bipolar magnetron sputtering of reactivity, wherein the target material has metal, and wherein institute
Stating coating material has the compound being made of the metal and the reactant gas.
6. the method according to claim 1 or 2 for bipolar magnetron sputtering, has in addition：
Reactant gas is conveyed to the bipolar magnetron sputtering of reactivity, wherein the target material has metallic compound, and
Wherein described coating material has the compound being made of the metallic compound and the reactant gas.
7. a kind of method for bipolar magnetron sputtering, this method has：
Substrate is transported in vacuum area, the substrate has polymer；
By magnetron to the backing coating in the vacuum area,
Wherein described coating has：Magnetron is run with electrical power according to bipolar sputtering mode, and wherein described bipolar is splashed
Emission mode has：
The alternating voltage of reversal frequency with scope from 10Hz to 1000Hz；
Into the energy input of the electrical power less than 6% of substrate；With
Coating speed more than 60nmm/min.
8. the method according to claim 7 for bipolar magnetron sputtering,
Wherein, the substrate is transported by chilling roll to cool down the substrate.
9. the method for bipolar magnetron sputtering according to claim 7 or 8,
Wherein, have to the coating of the substrate：Using by the material in following material group to the backing coating：
Copper,
Niobium oxide, and
Titanium oxide.
10. a kind of magnetic control means (100), has：
Two magnetic control targets (102a, 102b), it is with target material；
Process control equipment, for depositing (110) layer (122) on substrate (120) by the target material,
Wherein, the process control equipment is configured to so that the two magnetic control targets (102a, 102b) are according to bipolar sputtering mould
Formula is run with the frequency less than 1000Hz.
11. magnetic control means according to claim 10,
Wherein, the substrate (120) has polymer.
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| DE102016118799.2A DE102016118799B4 (en) | 2016-10-05 | 2016-10-05 | Magnetron sputtering process |
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| Publication number | Publication date |
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| JP2018059205A (en) | 2018-04-12 |
| CN107916406B (en) | 2021-12-24 |
| DE102016118799B4 (en) | 2022-08-11 |
| DE102016118799A1 (en) | 2018-04-05 |
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