CN107903712A - Metal oxide semiconductor ink and application method in a kind of inkjet printing technology - Google Patents
Metal oxide semiconductor ink and application method in a kind of inkjet printing technology Download PDFInfo
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- CN107903712A CN107903712A CN201711142406.3A CN201711142406A CN107903712A CN 107903712 A CN107903712 A CN 107903712A CN 201711142406 A CN201711142406 A CN 201711142406A CN 107903712 A CN107903712 A CN 107903712A
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- metal oxide
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- inkjet printing
- semiconductor metal
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 34
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005516 engineering process Methods 0.000 title claims abstract description 19
- 238000007641 inkjet printing Methods 0.000 title claims abstract description 19
- 239000002904 solvent Substances 0.000 claims abstract description 20
- 229920000620 organic polymer Polymers 0.000 claims abstract description 17
- 239000012702 metal oxide precursor Substances 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 9
- 238000007639 printing Methods 0.000 claims description 6
- 239000004793 Polystyrene Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 3
- -1 acetylacetonate ions Chemical class 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 150000002170 ethers Chemical class 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims 1
- 239000004926 polymethyl methacrylate Substances 0.000 claims 1
- 229920005553 polystyrene-acrylate Polymers 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000002243 precursor Substances 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- 230000001131 transforming effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 8
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 241000370738 Chlorion Species 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/38—Inkjet printing inks characterised by non-macromolecular additives other than solvents, pigments or dyes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/30—Inkjet printing inks
- C09D11/36—Inkjet printing inks based on non-aqueous solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
本发明公开一种喷墨打印技术中的半导体金属氧化物墨水的优化工艺，属于氧化物半导体技术和印刷电子技术领域，该工艺通过掺杂的方式改善薄膜性能，且掺杂比例可调，掺杂效果显著。该溶液以半导体氧化物前驱体及其对应溶剂作为基础溶液，通过加入第二溶剂及相应的有机聚合物制备成复合溶液完成墨水掺杂。本发明制作的有源层采用喷墨打印的方式制作，与基础溶液相比，该有源层在溶液中通过复合溶剂实现金属氧化物前驱体与有机聚合物的均匀共混，在成膜的过程中有机聚合物明显改善了溶剂挥发后图案的不均匀形貌，在后续的热处理工艺中，有机聚合物的掺杂影响了前驱体转变为金属氧化物的过程，通过促进了导电沟道的形成提高了其电子的迁移率。
The invention discloses an optimization process of semiconductor metal oxide ink in inkjet printing technology, which belongs to the field of oxide semiconductor technology and printed electronics technology. The process improves the film performance by doping, and the doping ratio is adjustable. The miscellaneous effect is remarkable. The solution uses the semiconductor oxide precursor and its corresponding solvent as a base solution, and prepares a composite solution by adding a second solvent and a corresponding organic polymer to complete ink doping. The active layer produced by the present invention is produced by inkjet printing. Compared with the base solution, the active layer realizes the uniform blending of the metal oxide precursor and the organic polymer through the composite solvent in the solution. During the process, the organic polymer significantly improved the uneven morphology of the pattern after the solvent volatilized. In the subsequent heat treatment process, the doping of the organic polymer affected the process of transforming the precursor into a metal oxide, and promoted the formation of the conductive channel. Formation increases the mobility of its electrons.
Description
Technical field
The present invention relates to semiconductor materials and devices and inkjet printing technology, belongs to printed electronics field, specifically relates to
And metal oxide semiconductor ink and application method in a kind of inkjet printing technology.
Background technology
With the arrival of information age, Display Technique is just accelerating to large scale, and flexible, printable direction is developed, had
In the array driving display device of source, the thin-film transistor technologies of its core technology have attracted a large amount of enterprises and the attention of researcher.
Thin film transistor (TFT) is a kind of field-effect semiconductor device, including substrate, insulating layer, active layer, grid and source-drain electrode etc. are several
Important component.Wherein active layer has vital influence for device performance and preparation process.In the nearly more than ten years
In time, transistor active layer material is based on silicon materials, and TFT-LCD display devices are developed rapidly on this basis, and
Become mainstream display terminal.In recent years, metal oxide is due to its high grade of transparency and mobility and relatively low is prepared into
This and the characteristic prepared suitable for large area have attracted the exploitation and use of a large number of researchers and enterprise to the technology.However,
But current silica-base material and metal oxide semiconductor material is required for the film-forming process by sputtering, chemical deposition to prepare
Corresponding film is, it is necessary to which high vacuum environment and a large amount of mask plates, there is extremely complex technique and high cost of labor.
Present thin film transistor (TFT) mainstream technology is more more using being prepared on glass substrate by modes such as sputtering, chemical depositions
Crystal silicon or metal-oxide semiconductor (MOS), for mode of printing prepares transistor, this preparation method has higher
Manufacturing cost and complex technological process.It is right for mode of printing prepares inorganic, metal oxide thin film transistor (TFT)
There is higher compatibility in substrate selection, it is the most frequently used now, most hot without the advantages that mask plate inkjet printing to be become
A kind of preparation method of door.But the solution of inorganic, metal oxide material as marking ink when, its prepare MOTFT it is past
Toward having, electron mobility and on-off ratio be not high, the performance shortcomings such as performance degradation caused by film uniformity is bad and be unfavorable for reality
Border is applied and mass production.
The content of the invention
The object of the present invention is to provide the metal oxide semiconductor ink and application method in a kind of inkjet printing technology,
By realizing the blending of double solvents, metal oxide precursor and organic polymer in the solution before forming thin film, into
Organic polymer improves the uneven pattern of pattern after solvent volatilization during film, while have impact on presoma and be changed into gold
Belong to the process of oxide, the formation by promoting conducting channel improves the mobility of its electronics.
The present invention is realized using following methods：
A kind of metal oxide semiconductor ink in inkjet printing technology, the ink are molten with metal oxide semiconductor presoma
Solution based on liquid, completes to be blended and adulterates and be prepared into composite solution by adding the second solvent and organic polymer.It is described
Metal oxide semiconductor persursor material be made of the metallic salt of organic or inorganic, include acetylacetone,2,4-pentanedione radical ion, second
One or more anion in acid ion, nitrate ion, chlorion.The organic polymer is in the second solvent
Dissolubility is good, and with stable chemical property and does not have directly with the metal oxide semiconductor presoma in water oxygen and ink
The chemical reaction connect；
Second solvent includes esters and ketone.
The metal oxide semiconductor persursor material includes one kind in Indium Tris acetylacetonate and indium nitrate.
The molecular weight of the organic polymer is a certain molecular weight between 2000 to 1,000 ten thousand, including polystyrene and poly-
One kind in methyl methacrylate.
The good solvent of the metal oxide semiconductor presoma includes alcohols and ethers, has excellent mix with the second solvent
Dissolubility.
In the composite solution, the molar concentration of metal oxide semiconductor presoma between the M of 0.02 M ~ 0.8, and
The mass fraction ratio of organic polymer solute and metal oxide precursor solute is 0.1:100 to 5:Between 100.
The application method of metal oxide semiconductor ink：Composite solution is prepared smooth one by way of inkjet printing
On substrate, the contact angle of the substrate and composite solution is at 0 ~ 90 °, and the temperature of substrate is maintained at 30 ~ 50 DEG C during printing.This is compound
Solution is printed upon on substrate afterwards, it is necessary to by thermal anneal process, and annealing temperature is at 200 ~ 300 DEG C.
Compared with prior art, remarkable advantage of the invention and have the beneficial effect that：The metal oxide that the present invention makes is thin
Film transistor device, its active layer are prepared by the way of inkjet printing, its technique is simple, and operation is quick and precisely；And ink-jet is beaten
The used active layer of print is then the blending that metal oxide precursor and organic polymer are realized by using double solvents,
Organic polymer improves the uneven pattern of pattern after solvent volatilization during film forming, while have impact on presoma and be changed into
The process of metal oxide, the formation by promoting conducting channel improve the mobility of its electronics.
Brief description of the drawings
Fig. 1 is the structure diagram of metal oxide thin-film transistor device in the present invention.
Fig. 2 is the transfer characteristic curve figure and corresponding deposited picture that the embodiment of the present invention 1,2 is tested out.
Fig. 3 is the corresponding longitudinal sagittal height figure of the pattern prepared by this discovery embodiment 1,2.
The corresponding X-ray electronic energy spectrum of active layer film prepared by this discovery of Fig. 4 embodiment 1,2.
【Label declaration】Wherein 100 be p-type doped silicon wafer, and 110 be insulating layer, and 120 be active layer, and 130 be source-drain electrode.
Embodiment
The present invention will be described in further detail by specific embodiment below.
Embodiment 1
1) silicon chip with 100 nm thick silicon dioxide insulating layers is distinguished in acetone, isopropanol, chloroform, deionized water
Ultrasonic 10min, and dry up surface, vacuum drying using clean nitrogen.
2) silicon chip is subjected to oxygen plasma processing, specific method is：By the silicon chip insulating layer be placed in upwardly etc. from
In daughter cleaning machine cavity, plasma potential is set as 630 V, handles 5min, face up taking-up after being disposed.
3) metal-oxide semiconductor (MOS) presoma solute Indium Tris acetylacetonate is dissolved in 3ml's with 120 mg/ml of final concentration
Ethylene glycol monomethyl ether：Ethyl acetate (volume ratio 7:3) in double solvents, the polymethyl of 9mg is added on the basis of this solution
Sour methyl esters（Molecular weight 120000）, 60 DEG C stirring 2h after be stored at room temperature it is overnight.The syringe filters mistake that the solution passes through 0.22um
Printed on after filter by type piezoelectric ink jet printer on demand on the insulating layer on silicon chip.The temperature of inkjet printing substrate is 40
DEG C, after the completion of printing, the silicon chip is in 80 °C of Heat preservation 30min, 225 °C of heating 1h afterwards.
4) the Au electrodes of 50 nm are formed on active layer using mask plate using the mode of physical vapour deposition (PVD).
Embodiment 2
1) silicon chip with 100 nm thick silicon dioxide insulating layers is divided in acetone, isopropanol, chloroform, deionized water
Not ultrasound 10min, and dry up surface, vacuum drying using clean nitrogen.
2) silicon chip is subjected to oxygen plasma processing, specific method is：By the silicon chip insulating layer be placed in upwardly etc. from
In daughter cleaning machine cavity, plasma potential is set as 630 V, handles 5min, face up taking-up after being disposed.
3) by metal-oxide semiconductor (MOS) presoma solute indium nitrate with the second for being dissolved in 3ml of 120 mg/ml of final concentration
Alcohol：Ethyl acetate (volume ratio 7:3) in double solvents, it is stored at room temperature after 60 DEG C of stirring 2h overnight.Add on the basis of this solution
Enter the polystyrene of 3mg（Molecular weight 200000）, stirring at normal temperature 2h dissolvings are completely.The syringe filters that the solution passes through 0.22um
Printed on after filtering by type piezoelectric ink jet printer on demand on the insulating layer on silicon chip.The temperature of inkjet printing substrate is
40 °C, after the completion of printing, the silicon chip is in 80 °C of Heat preservation 30min, 225 °C of heating 1h afterwards.
4) the Au electrodes of 50 nm are formed on active layer using mask plate using the mode of physical vapour deposition (PVD).
Device architecture prepared by the present invention is as shown in Figure 1.Embodiment 1 and inorganic, metal oxide prepared by embodiment 2 are thin
The electricity transfer characteristic curve and corresponding deposited picture of film transistor are as shown in Fig. 2, the corresponding longitudinal direction of the pattern is cut at the same time
Face is highly as shown in Figure 3.As shown in Figure 2, inorganic, metal oxide thin film transistor (TFT) is after polystyrene is added, mobility from
4.2 cm2V-1s-113.7 cm are brought up to2V-1s-1, Fig. 4 illustrates that the chemical constituent of the film is changed, this is property
Can changed one of the main reasons.Meanwhile the uniformity of film is understood by Fig. 2 and Fig. 3, i.e. the whole height of film is poor,
There is larger lifting.After adding polystyrene in solution, low pattern is improved between the senior middle school of both sides, and " coffee ring " phenomenon obtains
To suppression.
The foregoing is merely presently preferred embodiments of the present invention, all equivalent changes done according to scope of the present invention patent with
Modification, should all belong to the covering scope of the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711142406.3A CN107903712A (en) | 2017-11-17 | 2017-11-17 | Metal oxide semiconductor ink and application method in a kind of inkjet printing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711142406.3A CN107903712A (en) | 2017-11-17 | 2017-11-17 | Metal oxide semiconductor ink and application method in a kind of inkjet printing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107903712A true CN107903712A (en) | 2018-04-13 |
Family
ID=61846047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711142406.3A Pending CN107903712A (en) | 2017-11-17 | 2017-11-17 | Metal oxide semiconductor ink and application method in a kind of inkjet printing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107903712A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449245A (en) * | 2018-10-22 | 2019-03-08 | 福州大学 | A kind of metal oxide optotransistor and preparation method thereof |
| WO2023087353A1 (en) * | 2021-11-19 | 2023-05-25 | 惠州华星光电显示有限公司 | Transistor and method for manufacturing same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1400107A (en) * | 2001-08-03 | 2003-03-05 | 中国科学院金属研究所 | Ink jet printing method for preparing metal oxide functional film |
| CN102160182A (en) * | 2008-09-17 | 2011-08-17 | 出光兴产株式会社 | Thin film transistor having crystalline indium oxide semiconductor film |
| CN103779425A (en) * | 2014-01-27 | 2014-05-07 | 上海交通大学 | Preparing method for indium gallium zinc oxide semi-conductor film |
| CN104284952A (en) * | 2012-02-29 | 2015-01-14 | 耶路撒冷希伯来大学伊森姆研究发展有限公司 | Inks comprising metal precursor nanoparticles |
-
2017
- 2017-11-17 CN CN201711142406.3A patent/CN107903712A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1400107A (en) * | 2001-08-03 | 2003-03-05 | 中国科学院金属研究所 | Ink jet printing method for preparing metal oxide functional film |
| CN102160182A (en) * | 2008-09-17 | 2011-08-17 | 出光兴产株式会社 | Thin film transistor having crystalline indium oxide semiconductor film |
| CN104284952A (en) * | 2012-02-29 | 2015-01-14 | 耶路撒冷希伯来大学伊森姆研究发展有限公司 | Inks comprising metal precursor nanoparticles |
| CN103779425A (en) * | 2014-01-27 | 2014-05-07 | 上海交通大学 | Preparing method for indium gallium zinc oxide semi-conductor film |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109449245A (en) * | 2018-10-22 | 2019-03-08 | 福州大学 | A kind of metal oxide optotransistor and preparation method thereof |
| WO2023087353A1 (en) * | 2021-11-19 | 2023-05-25 | 惠州华星光电显示有限公司 | Transistor and method for manufacturing same |
| US12349583B2 (en) | 2021-11-19 | 2025-07-01 | Huizhou China Star Optoelectronics Display Co., Ltd. | Transistor and manufacturing method thereof |
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Application publication date: 20180413 |