CN107818940B - Electrostatic chuck device and temperature control method thereof - Google Patents
Electrostatic chuck device and temperature control method thereof Download PDFInfo
- Publication number
- CN107818940B CN107818940B CN201711243093.0A CN201711243093A CN107818940B CN 107818940 B CN107818940 B CN 107818940B CN 201711243093 A CN201711243093 A CN 201711243093A CN 107818940 B CN107818940 B CN 107818940B
- Authority
- CN
- China
- Prior art keywords
- temperature
- wafer
- electrostatic chuck
- cold source
- chuck device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H10P72/72—
-
- H10P72/722—
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本发明公开一种静电吸盘装置及其温控方法。静电吸盘装置，包括，静电吸盘，设置于工艺腔室内；冷源供应管道，设置在静电吸盘装置之基体内，之冷却端导向晶圆背部，之供冷端与外界冷却气体源连通；压力控制单元，用于控制导入晶圆背部的冷源之工作压力；温度控制单元，设置在冷源供应管道上，用以控制冷源供应管道之冷却端温度；排气装置，与外界冷却气体源相连通。本发明通过温度控制单元对导入晶圆之背面的冷却端温度进行控制，不仅能够有效解决工艺反应生成物凝结温度较低时，在静电吸盘装置密封边缘流场出口处形成粘附并导致成为污染源，而且可增加工艺选择方案和工艺配方窗口，减少晶圆缺陷，延长腔体维护周期，增加车间产能。
The invention discloses an electrostatic chuck device and a temperature control method thereof. The electrostatic chuck device includes an electrostatic chuck, which is arranged in the process chamber; a cooling source supply pipeline, which is arranged in the base of the electrostatic chuck device, the cooling end leading to the back of the wafer, and the cooling end communicating with the external cooling gas source; pressure control The unit is used to control the working pressure of the cold source introduced into the back of the wafer; the temperature control unit is arranged on the cold source supply pipe to control the temperature of the cooling end of the cold source supply pipe; the exhaust device is connected to the external cooling gas source Pass. The invention controls the temperature of the cooling end on the back side of the introduced wafer through the temperature control unit, which can not only effectively solve the problem that when the condensation temperature of the process reaction product is low, adhesion is formed at the outlet of the flow field at the sealing edge of the electrostatic chuck device, which causes it to become a pollution source. , and can increase the process selection scheme and process recipe window, reduce wafer defects, prolong the maintenance cycle of the cavity, and increase the workshop capacity.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an electrostatic chuck device and a temperature control method thereof.
Background
Plasma etching is an important process for wafer processing, and as the characteristic dimension of wafer processing advances from micron-scale to nanometer-scale technology nodes, the control requirement of plasma etching on defects is more and more strict. Among the many factors that contribute to plasma etch defects, the industry has generally ignored one of the most significant factors, namely the cooling system of the electrostatic chuck device.
An Electrostatic Chuck (E-Chuck) is an important component for wafer fixing and temperature control, which holds a wafer by Electrostatic force generated by an insulating layer and stabilizes the surface of the wafer at a set temperature by cooling gas in a channel of the insulating layer and circulating cooling liquid in a susceptor. Because the wafer temperature is an important factor influencing the etching rate and uniformity, the chemical reaction in etching is very sensitive to the temperature, and the tiny temperature difference can cause great etching deviation, the good etching effect requires that the wafer has stable and uniform temperature distribution.
Although the wafer is in direct contact with the insulating layer of the electrostatic chuck, the cooling gas between the electrostatic chuck and the wafer maintains a certain pressure, and the pressure makes the cooling gas escape to the vacuum cavity. Meanwhile, the gas escapes to bring the particles on the electrostatic chuck into the vacuum chamber, thereby causing wafer defects.
In order to reduce the defects of the wafer and improve the process stability, an electrostatic chuck device is sought which can not only effectively solve the problem that the condensation temperature of the process reaction product is low, and the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and becomes a pollution source, but also can increase the process selection scheme and the process formula window, reduce the defects of the wafer, prolong the maintenance period of the cavity, and increase the productivity of the workshop, which is one of the technical problems to be solved by the technical personnel in the field.
Therefore, in order to solve the problems in the prior art, designers of the present application have been actively studying and improving through years of experience in the industry, and thus have invented an electrostatic chuck device and a temperature control method thereof.
Disclosure of Invention
The invention provides an electrostatic chuck device aiming at the defects of a wafer caused by the fact that particles on an electrostatic chuck are carried into a vacuum cavity when cooling gas escapes to the vacuum cavity under the action of pressure in the prior art.
It is still another object of the present invention to provide a temperature control method for an electrostatic chuck device, which is capable of preventing the particles on the electrostatic chuck from being brought into the vacuum chamber when the cooling gas escapes to the vacuum chamber under the pressure of the cooling gas, thereby causing the wafer defect.
In order to achieve the objective of the present invention, the present invention provides an electrostatic chuck device, which comprises an electrostatic chuck disposed in a process chamber and used for adsorbing a wafer to be processed; a cold source supply pipeline, disposed in the substrate of the electrostatic chuck device, wherein a cooling end of the cold source supply pipeline is directed to the back of the wafer to be processed and used for cooling the wafer to be processed, and a cold supply end of the cold source supply pipeline is communicated with an external cooling gas source; the pressure control unit is arranged on the cold source supply pipeline and used for controlling the working pressure of the cold source for guiding the external cooling gas source into the back of the wafer to be processed through the cold source supply pipeline; the temperature control unit is arranged on the cold source supply pipeline, is connected with the external cooling gas source through the pressure control unit and is used for controlling the temperature of the cooling end of the cold source supply pipeline; and the exhaust device is communicated with the external cooling gas source through the pressure control unit.
Optionally, the source of ambient cooling gas is helium.
Optionally, a channel is disposed on the insulating layer of the electrostatic chuck.
To achieve another object of the present invention, the present invention provides a method for controlling temperature of an electrostatic chuck device, comprising:
step S1 is executed: setting the pressure control unit according to the process requirement in the process chamber, and adjusting the pressure of the cold source entering the process chamber from the cold source supply pipeline;
step S2 is executed: the temperature of the cooling end of the cold source supply pipeline leading into the back of the wafer to be processed is further controlled by setting the temperature control unit according to the solidification temperature of the reaction product in the process chamber and the process temperature of the electrostatic adsorption device.
Optionally, the temperature of the cooling end of the cooling source supply pipe introduced to the back surface of the wafer to be processed is sufficient for cooling the wafer to be processed, and simultaneously, the solidification of the reaction product in the process chamber is avoided.
Optionally, the temperature of the cooling end of the cooling source supply pipe leading to the back side of the wafer to be processed is at least lower than the process temperature of the electrostatic chuck device.
Optionally, the temperature of the cooling end of the cooling source supply pipe leading to the back side of the wafer to be processed is not equal to the solidification temperature of the reaction product in the process chamber.
Optionally, the curing temperature of the reaction product in the process chamber is 45 ℃ or lower, the process temperature of the electrostatic chuck device is 50-60 ℃, and the temperature of the cooling end of the cooling source supply pipeline, which is led to the back surface of the wafer to be processed, is set to be 45-55 ℃ by the temperature control unit.
In summary, the electrostatic chuck device of the present invention controls the temperature of the cooling end introduced to the back side of the wafer to be processed through the temperature control unit, which not only can effectively solve the problem that the condensation temperature of the process reaction product is low, the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and the product becomes a pollution source, but also can increase the process selection scheme and the process recipe window, reduce the wafer defect, prolong the chamber maintenance period, and increase the workshop productivity.
Drawings
FIG. 1 is a schematic structural view of an electrostatic chuck device according to the present invention;
FIG. 2 is a flow chart illustrating a method for controlling temperature of the electrostatic chuck device according to the present invention.
Detailed Description
The invention will be described in detail with reference to the following embodiments and drawings for illustrating the technical content, structural features, and achieved objects and effects of the invention.
Plasma etching is an important process for wafer processing, and as the characteristic dimension of wafer processing advances from micron-scale to nanometer-scale technology nodes, the control requirement of plasma etching on defects is more and more strict. Among the many factors that contribute to plasma etch defects, the industry has generally ignored one of the most significant factors, namely the cooling system of the electrostatic chuck.
An Electrostatic Chuck (E-Chuck) is an important component for wafer fixing and temperature control, which holds a wafer by Electrostatic force generated by an insulating layer and stabilizes the surface of the wafer at a set temperature by cooling gas in a channel of the insulating layer and circulating cooling liquid in a susceptor. Because the wafer temperature is an important factor influencing the etching rate and uniformity, the chemical reaction in etching is very sensitive to the temperature, and the tiny temperature difference can cause great etching deviation, the good etching effect requires that the wafer has stable and uniform temperature distribution.
Although the wafer is in direct contact with the insulating layer of the electrostatic chuck, the cooling gas between the electrostatic chuck and the wafer maintains a certain pressure, and the pressure makes the cooling gas escape to the vacuum cavity. Meanwhile, the gas escapes to bring the particles on the electrostatic chuck into the vacuum chamber, thereby causing wafer defects.
In order to reduce the defects of the wafer and improve the process stability, an electrostatic chuck device is sought which can not only effectively solve the problem that the condensation temperature of the process reaction product is low, and the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and becomes a pollution source, but also can increase the process selection scheme and the process formula window, reduce the defects of the wafer, prolong the maintenance period of the cavity, and increase the productivity of the workshop, which is one of the technical problems to be solved by the technical personnel in the field.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an electrostatic chuck device according to the present invention. The electrostatic chuck device 1 includes: an electrostatic chuck 10 disposed in a process chamber (not shown) for chucking a wafer (not shown) to be processed; a cold source supply pipeline 11 disposed in the substrate 12 of the electrostatic chuck device 1, wherein a cooling end 111 of the cold source supply pipeline 11 is directed to the back of the wafer to be processed and used for cooling the wafer to be processed, and a cooling end 112 of the cold source supply pipeline 11 is communicated with an external cooling gas source 13; a pressure control unit 14, disposed on the cold source supply pipeline 11, for controlling the working pressure of the cold source for guiding the external cooling gas source 13 into the back of the wafer to be processed through the cold source supply pipeline 11; a temperature control unit 15, disposed on the cold source supply pipeline 11, and connected to the external cooling gas source 13 through the pressure control unit 14, for controlling the temperature of the cooling end 111 of the cold source supply pipeline 11; and the exhaust device 16 is communicated with the external cooling gas source 13 through the pressure control unit 14.
As will be readily appreciated by those skilled in the art, ideally the wafer to be processed is in full surface contact with the insulating layer (not shown) of the electrostatic chuck apparatus 1, which is a solid heat transfer problem. However, in the actual production process, the contact surface between the wafer and the insulating layer of the electrostatic chuck device 1 is not completely in surface contact, and the actual contact area is about 5% to 10% due to the roughness, so that the contact behavior is changed from ideal surface-to-surface contact to actual point-to-point contact, and a contact gap (not shown) is generated.
On the other hand, the process chamber in which the electrostatic chuck device 1 operates is a vacuum environment, and the vacuum heat conduction coefficient in the contact gap is very low. In order to enhance the heat dissipation effect in the contact gap, helium is introduced into the contact gap as an external cooling gas source 13 with good heat conduction effect, so that the cooling effect on the wafer is enhanced. In order to uniformly distribute the helium gas as the external cooling gas source 13 on the backside of the wafer to be processed, it is preferable that the insulating layer of the electrostatic chuck 10 is provided with channels (not shown) for uniformly dispersing the external cooling gas source 13 introduced to the backside of the wafer.
In order to more intuitively disclose the technical solution of the present invention and to highlight the beneficial effects of the present invention, the temperature control method of the electrostatic chuck device will now be described with reference to the following embodiments. In the specific embodiment, the positions of the "back side" of the wafer, the sequence of the temperature control steps, and the like are well known to those skilled in the art, and are not described herein, and the illustration and the description of the present invention should not be construed as limiting the technical solution of the present invention.
Referring to fig. 2 in conjunction with fig. 1, fig. 2 is a flow chart illustrating a temperature control method of the electrostatic chuck device according to the present invention. The temperature control method of the electrostatic chuck device comprises the following steps:
step S1 is executed: setting the pressure control unit 14 to adjust the pressure of the cold source entering the process chamber from the cold source supply pipeline 11 according to the process requirement in the process chamber;
step S2 is executed: the temperature of the cooling end 111 of the cooling source supply pipe 11 leading to the back of the wafer to be processed is controlled by setting the temperature control unit 15 according to the solidification temperature of the reaction product in the process chamber and the process temperature of the electrostatic adsorption device 1.
Wherein the temperature of the cooling end 111 of the cooling source supply pipe 11 introduced to the back surface of the wafer to be processed is satisfied for cooling the wafer to be processed, and simultaneously, the solidification of the reaction product in the process chamber is avoided, so as to reduce the deposition of the reaction product on the surface edge of the electrostatic chuck 10. That is, the temperature of the cooling end 111 of the heat source supply pipe 11 introduced to the backside of the wafer to be processed is at least lower than the process temperature of the electrostatic chuck device 1. The temperature of the cooling end 111 of the heat source supply pipe 11 introduced to the backside of the wafer to be processed is not equal to the solidification temperature of the reaction product in the process chamber.
More specifically, for example, the solidification temperature of the reaction product in the process chamber is 45 ℃ or less, the process temperature of the electrostatic chuck device 1 is 50 to 60 ℃, and the temperature of the cooling end 111 of the cooling source supply pipe 11 introduced to the back surface of the wafer to be processed is set to 45 to 55 ℃ by the temperature control unit 15. Obviously, at the set temperature, the cooling of the wafer to be processed is satisfied, and the solidification of the reaction product in the process chamber is avoided, so as to reduce the deposition of the reaction product on the edge of the surface of the electrostatic chuck 10.
In summary, the electrostatic chuck device of the present invention controls the temperature of the cooling end introduced to the back side of the wafer to be processed through the temperature control unit, which not only can effectively solve the problem that the condensation temperature of the process reaction product is low, the adhesion is formed at the outlet of the sealing edge flow field of the electrostatic chuck device and the product becomes a pollution source, but also can increase the process selection scheme and the process recipe window, reduce the wafer defect, prolong the chamber maintenance period, and increase the workshop productivity.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711243093.0A CN107818940B (en) | 2017-11-30 | 2017-11-30 | Electrostatic chuck device and temperature control method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711243093.0A CN107818940B (en) | 2017-11-30 | 2017-11-30 | Electrostatic chuck device and temperature control method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107818940A CN107818940A (en) | 2018-03-20 |
| CN107818940B true CN107818940B (en) | 2020-04-10 |
Family
ID=61605212
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711243093.0A Active CN107818940B (en) | 2017-11-30 | 2017-11-30 | Electrostatic chuck device and temperature control method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107818940B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987030A (en) * | 2019-05-22 | 2020-11-24 | 芯恩（青岛）集成电路有限公司 | Semiconductor device and method for improving wafer adsorption capacity of electrostatic chuck |
| CN112530779B (en) * | 2020-11-10 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Temperature control system |
| CN114551202B (en) * | 2020-11-25 | 2025-01-03 | 中国科学院微电子研究所 | Electrostatic chuck, processing chamber and semiconductor processing equipment |
| CN113421814B (en) * | 2021-06-18 | 2022-05-27 | 长江存储科技有限责任公司 | Semiconductor structure processing machine, operation method and electrostatic chuck |
| CN115692294A (en) * | 2021-07-23 | 2023-02-03 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment and control method thereof |
| CN115707524A (en) * | 2021-08-19 | 2023-02-21 | 长鑫存储技术有限公司 | Cleaning device and manufacturing system of semiconductor structure |
| CN114014009A (en) * | 2021-11-22 | 2022-02-08 | 江苏盟星智能科技有限公司 | Intelligent docking station robot plate collecting and releasing machine |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6334311B1 (en) * | 1999-03-05 | 2002-01-01 | Samsung Electronics Co., Ltd. | Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility |
| CN102354673A (en) * | 2008-07-10 | 2012-02-15 | 佳能安内华股份有限公司 | Substrate temperature control method |
| CN102918336A (en) * | 2010-05-12 | 2013-02-06 | 布鲁克机械公司 | System and method for cryogenic cooling |
| CN103177996A (en) * | 2011-12-22 | 2013-06-26 | 中芯国际集成电路制造(北京)有限公司 | Reaction device for processing wafers, electrostatic chuck (ESC) and wafer temperature control method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5032269B2 (en) * | 2007-11-02 | 2012-09-26 | 東京エレクトロン株式会社 | Temperature adjusting apparatus and temperature adjusting method for substrate to be processed, and plasma processing apparatus including the same |
-
2017
- 2017-11-30 CN CN201711243093.0A patent/CN107818940B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6334311B1 (en) * | 1999-03-05 | 2002-01-01 | Samsung Electronics Co., Ltd. | Thermoelectric-cooling temperature control apparatus for semiconductor device fabrication facility |
| CN102354673A (en) * | 2008-07-10 | 2012-02-15 | 佳能安内华股份有限公司 | Substrate temperature control method |
| CN102918336A (en) * | 2010-05-12 | 2013-02-06 | 布鲁克机械公司 | System and method for cryogenic cooling |
| CN103177996A (en) * | 2011-12-22 | 2013-06-26 | 中芯国际集成电路制造(北京)有限公司 | Reaction device for processing wafers, electrostatic chuck (ESC) and wafer temperature control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107818940A (en) | 2018-03-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107818940B (en) | Electrostatic chuck device and temperature control method thereof | |
| JP4990636B2 (en) | Vacuum processing equipment using a transport tray | |
| US11692732B2 (en) | Air cooled faraday shield and methods for using the same | |
| US9117857B2 (en) | Ceiling electrode plate and substrate processing apparatus | |
| CN104821268B (en) | Substrate processing apparatus and substrate processing method | |
| US20200333766A1 (en) | Substrate processing apparatus, substrate processing method, semiconductor device manufacturing method, and control program | |
| CN106663648B (en) | Substrate carrier using proportional thermal fluid delivery system | |
| US20150332942A1 (en) | Pedestal fluid-based thermal control | |
| TWI744673B (en) | Loadlock integrated bevel etcher system | |
| TWI701756B (en) | Carrying device and semiconductor processing equipment | |
| JP2008251742A (en) | Substrate treating apparatus, and substrate mounting base on which focus ring is mounted | |
| CN102870200A (en) | Apparatus for radially delivering gas to a chamber and method of use thereof | |
| CN111511959B (en) | Deposition processing system with active temperature control and related method | |
| US12062567B2 (en) | Systems and methods for substrate support temperature control | |
| CN107431032A (en) | Airflow to reduce condensation on substrate handling chucks | |
| CN115485807B (en) | Method and apparatus for processing substrate | |
| JP5002505B2 (en) | Transport tray and vacuum processing apparatus using the transport tray | |
| CN108376659B (en) | Helium pressure control system and method for static electricity removal of electrostatic chuck | |
| JP2007067037A (en) | Vacuum processing equipment | |
| TW202209395A (en) | Cooled edge ring with integrated seals | |
| TW201907507A (en) | Temperature adjustment substrate holder for substrate processing system | |
| JP2010177267A (en) | Conveyance tray, and vacuum treatment apparatus using the conveyance tray | |
| TWI623635B (en) | Method and apparatus for processing a semiconductor workpiece | |
| CN111161995A (en) | A fully enclosed mica heating base for plasma etching machine | |
| CN106611733B (en) | Many imports cavity heating support frame |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |