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CN107637167A - Light-emitting component - Google Patents

Light-emitting component Download PDF

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Publication number
CN107637167A
CN107637167A CN201680030263.4A CN201680030263A CN107637167A CN 107637167 A CN107637167 A CN 107637167A CN 201680030263 A CN201680030263 A CN 201680030263A CN 107637167 A CN107637167 A CN 107637167A
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Prior art keywords
convex
light
concave
layer
concavo
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增山聪
关隆史
鸟山重隆
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Jxtg Energy Corp
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Jxtg Energy Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/854Arrangements for extracting light from the devices comprising scattering means
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/18Diffraction gratings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)

Abstract

本发明的透明(See-through)型发光元件100具备:绕射光栅基板140,其于基材40的一面上形成有具有凹凸图案80的凹凸构造层142;第1电极92;有机层94;及第2电极98;且上述第1电极92、上述有机层94及上述第2电极98依序形成于上述凹凸构造层142上,上述凹凸图案80的凹凸的平均间距为150~650nm的范围内。透明型发光元件100可以高效率提取光。

The transparent (see-through) light-emitting element 100 of the present invention includes: a diffraction grating substrate 140, on which a textured layer 142 having a textured pattern 80 is formed on one side of a substrate 40; a first electrode 92; an organic layer 94; and a second electrode 98; wherein the first electrode 92, the organic layer 94, and the second electrode 98 are sequentially formed on the textured layer 142, and the average spacing of the textured pattern 80 is in the range of 150 to 650 nm. The transparent light-emitting element 100 can extract light with high efficiency.

Description

发光元件Light emitting element

技术领域technical field

本发明是关于一种透明(See-through)型的发光元件。The invention relates to a transparent (See-through) light-emitting element.

背景技术Background technique

关于作为下一代的显示装置或照明装置而受到期待的发光元件,有称为有机EL元件的有机发光二极体。有机EL元件的特征之一在于:元件本身为透明(See-through)。即,使用有机EL元件的显示装置或照明装置可通过该有机EL元件而看透另一侧。例如于专利文献1中记载有透明型的有机EL元件。As a light-emitting element expected as a next-generation display device or lighting device, there is an organic light-emitting diode called an organic EL element. One of the characteristics of the organic EL element is that the element itself is transparent (see-through). That is, a display device or a lighting device using an organic EL element can see through the organic EL element to the other side. For example, Patent Document 1 describes a transparent organic EL element.

有机EL元件因其透明的特征而期待应用于各种用途。例如认为以如于熄灯时与房间的墙壁等融为一体而减轻存在感或压迫感的融入空间的照明、窗口型照明等室内装饰照明的形式进行应用,或以发光窗口的形式进行应用,或者以车载照明的形式进行应用,使汽车的天窗透明化等。Organic EL elements are expected to be used in various applications due to their transparency. For example, it is considered to be applied in the form of interior lighting such as lighting that integrates with the wall of the room when the lights are off to reduce the sense of presence or pressure, window lighting, or in the form of a light-emitting window, or It is applied in the form of vehicle lighting, making the sunroof of a car transparent, etc.

关于有机EL元件,是将自阳极通过电洞注入层而注入的电洞、与自阴极通过电子注入层而注入的电子分别向发光层传输,于发光层内的有机分子上该等再结合而激发有机分子,藉此发出光。因此,于将有机EL元件用作显示装置或照明装置时,必须自元件内部高效率地提取源自发光层的光。因此,于专利文献2中已知有将使光进行绕射及/或散射的凹凸构造设置于有机EL元件的内外的情况。Regarding the organic EL element, the holes injected from the anode through the hole injection layer and the electrons injected from the cathode through the electron injection layer are respectively transported to the light-emitting layer, and these are recombined on organic molecules in the light-emitting layer. Excite organic molecules, thereby emitting light. Therefore, when an organic EL element is used as a display device or a lighting device, it is necessary to efficiently extract light from the light-emitting layer from the inside of the element. Therefore, it is known in Patent Document 2 that a concavo-convex structure for diffracting and/or scattering light is provided inside and outside the organic EL element.

[先前技术文献][Prior Art Literature]

[专利文献][Patent Document]

[专利文献1]日本特开2001-176674[Patent Document 1] Japanese Patent Laid-Open No. 2001-176674

[专利文献2]日本特开2006-236748[Patent Document 2] Japanese Patent Laid-Open No. 2006-236748

发明内容Contents of the invention

[发明所欲解决的课题][Problems to be Solved by the Invention]

然而,如上述的用以提取光的设置有凹凸构造的有机EL元件由于让穿透元件的光散射,故而模糊不清而透明性较低。However, the organic EL element provided with the concavo-convex structure for extracting light as described above scatters the light passing through the element, so it is blurred and has low transparency.

因此,本发明的目的在于提供一种可以高效率提取光的透明型发光元件。Therefore, an object of the present invention is to provide a transparent light-emitting device capable of efficiently extracting light.

[解决课题的技术手段][Technical means to solve the problem]

根据本发明的态样而提供一种透明型发光元件,其包括:According to an aspect of the present invention, a transparent light-emitting element is provided, which includes:

绕射光栅基板,其于基材的一面上形成有具有凹凸图案的凹凸构造层;Diffraction grating substrate, which has a concavo-convex structure layer with concavo-convex patterns formed on one side of the substrate;

第1电极;1st electrode;

有机层;及an organic layer; and

第2电极,且2nd electrode, and

上述第1电极、上述有机层及上述第2电极依序形成于上述凹凸构造层上,The first electrode, the organic layer, and the second electrode are sequentially formed on the concave-convex structure layer,

上述凹凸图案的凹凸的平均间距为150~650nm的范围内。The average pitch of the concavities and convexes of the above-mentioned concavo-convex pattern is in the range of 150-650 nm.

于上述透明型发光元件中,上述绕射光栅基板的雾度值亦可为2.0%以下。In the above-mentioned transparent light-emitting device, the haze value of the above-mentioned diffraction grating substrate may be 2.0% or less.

于上述透明型发光元件中,亦可上述凹凸图案的凸部的延伸方向于俯视下不规则地分布,且In the above-mentioned transparent light-emitting element, the extension direction of the protrusions of the above-mentioned concave-convex pattern may be irregularly distributed in plan view, and

上述凹凸图案的每单位面积的区域所包含的上述凸部于俯视下的轮廓线包含较曲线区间多的直线区间。The outline of the convex portion included in the area per unit area of the concave-convex pattern in a plan view includes more linear sections than curved sections.

于上述透明型发光元件中,亦可于俯视下与上述凸部的延伸方向大致正交的方向的上述凸部的宽度一定。In the above-mentioned transparent light-emitting element, the width of the convex portion in a direction substantially perpendicular to the direction in which the convex portion extends may be constant in plan view.

于上述透明型发光元件中,亦可上述曲线区间是如下区间:于藉由以上述凸部的宽度的平均值的π(圆周率)倍的长度划分上述凸部于俯视下的轮廓线而形成多个区间的情形时,区间的两端点间的直线距离相对于该两端点间的上述轮廓线的长度的比成为0.75以下,且In the above-mentioned transparent light-emitting element, the above-mentioned curve interval may be an interval in which multiple curves are formed by dividing the contour line of the above-mentioned convex portion in plan view by a length that is π (pi) times the average value of the width of the above-mentioned convex portion. In the case of a section, the ratio of the straight-line distance between the two end points of the section to the length of the above-mentioned contour line between the two end points is 0.75 or less, and

上述直线区间是上述多个区间中并非上述曲线区间的区间。The linear section is a section other than the curved section among the plurality of sections.

于上述透明型发光元件中,亦可上述曲线区间是如下区间:于藉由以上述凸部的宽度的平均值的π(圆周率)倍的长度划分上述凸部于俯视下的轮廓线而形成多个区间的情形时,连结区间的一端及该区间的中点的线段、与连结该区间的另一端及该区间的中点的线段所成的2个角度中,成为180°以下者其角度为120°以下;且In the above-mentioned transparent light-emitting element, the above-mentioned curve interval may be an interval in which multiple curves are formed by dividing the contour line of the above-mentioned convex portion in plan view by a length that is π (pi) times the average value of the width of the above-mentioned convex portion. In the case of two intervals, the angle between the line segment connecting one end of the interval and the midpoint of the interval and the line segment connecting the other end of the interval and the midpoint of the interval is 180° or less. Below 120°; and

上述直线区间是上述多个区间中并非上述曲线区间的区间,The above-mentioned linear section is an interval that is not the above-mentioned curved section among the above-mentioned plurality of sections,

上述多个区间中上述直线区间的比率为70%以上。The ratio of the linear section among the plurality of sections is 70% or more.

于上述透明型发光元件中,亦可藉由对利用扫描式探针显微镜对上述凹凸图案进行解析而获得的凹凸解析图像实施二维高速傅立叶变换处理而获得的傅立叶变换像,显现以波数的绝对值为0μm-1的原点为大致中心的圆状或圆环状的花样,且上述圆状或圆环状的花样存在于波数的绝对值成为1.54~6.67μm-1的范围内的区域内。In the above-mentioned transparent light-emitting device, the absolute value of the wavenumber can also be expressed by performing a two-dimensional high-speed Fourier transform on a concavo-convex analysis image obtained by analyzing the above-mentioned concavo-convex pattern with a scanning probe microscope. The origin of the value of 0 μm −1 is a circular or annular pattern approximately at the center, and the circular or annular pattern exists in a region where the absolute value of the wave number is in the range of 1.54 to 6.67 μm −1 .

[发明的效果][Effect of the invention]

本发明的发光元件为透明型并且发光效率较高。因此,本发明的发光元件对显示装置、照明装置等各种发光装置极为有效。The light-emitting element of the present invention is transparent and has high luminous efficiency. Therefore, the light-emitting device of the present invention is extremely effective for various light-emitting devices such as display devices and lighting devices.

附图说明Description of drawings

图1(a)、(b)是实施形态的发光元件的概略剖面图。Fig. 1(a) and (b) are schematic cross-sectional views of a light emitting element according to an embodiment.

图2(a)是实施形态的发光元件的凹凸图案的概略俯视图,图2(b)是表示图2(a)的概略俯视图中的切断线上的剖面图像。Fig. 2(a) is a schematic plan view of a concavo-convex pattern of the light emitting element according to the embodiment, and Fig. 2(b) is a cross-sectional image showing a cutting line in the schematic plan view of Fig. 2(a).

图3是表示凹凸图案的凹凸解析图像的傅立叶变换像的例。Fig. 3 is an example of a Fourier transform image showing a concavo-convex analysis image of a concavo-convex pattern.

图4是表示实施形态的发光元件的制造方法中使用膜状模具形成凹凸图案的情况的一例的概念图。Fig. 4 is a conceptual diagram showing an example of a case where a film mold is used to form a concave-convex pattern in the method of manufacturing a light emitting element according to the embodiment.

图5是表示实施例1、2及比较例1~3的发光元件的评价结果的表5 is a table showing the evaluation results of light-emitting elements of Examples 1 and 2 and Comparative Examples 1 to 3.

图6是凹凸图案的俯视解析图像(黑白图像)的一例。FIG. 6 is an example of a plan view analysis image (black and white image) of a concavo-convex pattern.

图7(a)及(b)是用以对于俯视解析图像中判定凸部的分支的方法的一例进行说明的图。7( a ) and ( b ) are diagrams for explaining an example of a method of determining branching of convex portions in a plan view analysis image.

图8(a)是用以说明曲线区间的第1定义方法的图,图8(b)是用以说明曲线区间的第2定义方法的图。FIG. 8( a ) is a diagram for explaining a first definition method of a curve section, and FIG. 8( b ) is a diagram for explaining a second definition method of a curve section.

附图标号Reference number

40:基材40: Substrate

92:第1电极92: 1st electrode

94:有机层94: organic layer

98:第2电极98: 2nd electrode

100:发光元件100: light emitting element

140:绕射光栅基板140: Diffraction grating substrate

142:凹凸构造层142: Concave-convex structure layer

具体实施方式detailed description

以下,针对本发明的透明型发光元件的实施形态及其制造方法,一面参照图式一面进行说明。Hereinafter, embodiments of the transparent light-emitting element of the present invention and a manufacturing method thereof will be described with reference to the drawings.

[透明型发光元件][Transparent light-emitting element]

将本实施形态的透明型发光元件的概略剖面图示于图1(a)。图1(a)所示的透明型发光元件100于基材40上依序具备凹凸构造层142、第1电极92、有机层94及第2电极98,进而包括密封构件101与密封接着剂层103。再者,于本申请案中,将形成有凹凸构造层142的基材40适当称为绕射光栅基板140。A schematic cross-sectional view of the transparent light-emitting element of this embodiment is shown in FIG. 1( a ). The transparent light-emitting element 100 shown in FIG. 1(a) sequentially includes a concave-convex structure layer 142, a first electrode 92, an organic layer 94, and a second electrode 98 on a substrate 40, and further includes a sealing member 101 and a sealing adhesive layer. 103. Furthermore, in this application, the substrate 40 on which the concavo-convex structure layer 142 is formed is appropriately referred to as a diffraction grating substrate 140 .

<基材><Substrate>

作为基材40,并无特别限制,可适当应用穿透可见光的公知的基板。例如,可应用由玻璃等透明无机材料所构成的基板;由聚酯(聚对苯二甲酸乙二酯、聚对苯二甲酸丁二酯、聚萘二甲酸乙二酯、聚芳酯等)、丙烯酸系树脂(聚甲基丙烯酸甲酯等)、聚碳酸酯、聚氯乙烯、苯乙烯系树脂(ABS树脂等)、纤维素系树脂(三乙酰纤维素等)、聚酰亚胺系树脂(聚酰亚胺树脂、聚酰亚胺酰胺树脂等)、环烯烃聚合物等树脂所构成的基板;于该等由树脂所构成的基板的表面形成由SiN、SiO2、SiC、SiOXNY、TiO2、Al2O3等无机物所构成的阻气层及/或由树脂材料所构成的阻气层而成的积层基板;将该等由树脂所构成的基板及该等阻气层交替积层而成的积层基板等。就发光元件100的用途而言,基材40较理想为具有耐热性、对UV光等耐候性的基材。就该等方面而言,更佳为玻璃或石英基板等由无机材料所构成的基材。尤其是于凹凸构造层142由无机材料形成的情形时,若由无机材料形成基材40,则于基材40与凹凸构造层142之间折射率的差较少,而可防止于发光元件100内的非刻意的折射或反射,故而较佳。又,基材40亦可为有可挠性的膜状(片状)基材,于基材40上,为了提高密接性,亦可设置表面处理层或易接着层等,为了防止水分或氧气等气体的渗入,亦可设置阻气层等。又,为了填埋基材表面的突起,亦可设置平滑化层等。基材40的厚度较佳为1~20mm的范围内。The substrate 40 is not particularly limited, and known substrates that transmit visible light can be suitably used. For example, substrates made of transparent inorganic materials such as glass; substrates made of polyester (polyethylene terephthalate, polybutylene terephthalate, polyethylene naphthalate, polyarylate, etc.) , Acrylic resin (polymethyl methacrylate, etc.), polycarbonate, polyvinyl chloride, styrene resin (ABS resin, etc.), cellulose resin (triacetyl cellulose, etc.), polyimide resin Substrates made of resins such as polyimide resins, polyimide amide resins, etc., cycloolefin polymers; SiN, SiO 2 , SiC, SiO X N are formed on the surface of these substrates made of resins A laminated substrate made of a gas barrier layer made of Y , TiO 2 , Al 2 O 3 and other inorganic substances and/or a gas barrier layer made of a resin material; A laminated substrate, etc., in which gas layers are alternately laminated. In terms of the application of the light-emitting element 100 , the base material 40 is preferably a base material having heat resistance and weather resistance to UV light and the like. In these respects, a substrate made of an inorganic material such as a glass or a quartz substrate is more preferable. Especially when the concave-convex structure layer 142 is formed of an inorganic material, if the base material 40 is formed of an inorganic material, the difference in refractive index between the base material 40 and the concave-convex structure layer 142 is small, and the light-emitting element 100 can be prevented. Unintentional refraction or reflection within, so better. Moreover, the base material 40 can also be a flexible film-like (sheet-like) base material. On the base material 40, in order to improve the adhesion, a surface treatment layer or an easy-to-adhesive layer can also be provided. To prevent the infiltration of gas, a gas barrier layer can also be provided. Moreover, a smoothing layer etc. may be provided in order to fill up the protrusion on the surface of a base material. The thickness of the base material 40 is preferably in the range of 1-20 mm.

<凹凸构造层><Concave-convex structure layer>

凹凸构造层142是于表面形成有微细的凹凸图案80的层。于发光元件中,具有微细的凹凸图案的凹凸构造层将光进行绕射及/或散射,藉此可实现将于有机层中所产生的光提取至元件外部。然而,于具有凹凸图案的凹凸构造层将光进行散射的情形时,凹凸构造层不仅散射源自有机层的光,亦散射穿透发光元件的光。因此,具有此种凹凸构造层的发光元件无法穿透其看透另一侧,或者于看透时另一侧的图像模糊。本实施形态的透明型发光元件100的凹凸构造层142藉由一面抑制光的散射,一面主要藉由绕射而将源自有机层94的光提取至发光元件100的外部,而兼顾透明性与光提取功能。The concavo-convex structure layer 142 is a layer in which the fine concavo-convex pattern 80 is formed on the surface. In a light-emitting device, the concave-convex structure layer having a fine concave-convex pattern diffracts and/or scatters light, whereby light generated in the organic layer can be extracted to the outside of the device. However, when the concave-convex structure layer having the concave-convex pattern scatters light, the concave-convex structure layer not only scatters light originating from the organic layer, but also scatters light passing through the light-emitting element. Therefore, the light-emitting element with such a concave-convex structure layer cannot see through it to see the other side, or the image on the other side is blurred when seen through. The concave-convex structure layer 142 of the transparent light-emitting element 100 of this embodiment suppresses the scattering of light and extracts the light from the organic layer 94 to the outside of the light-emitting element 100 mainly by diffraction, thereby achieving both transparency and light-emitting element 100. Light extraction function.

于图2(a)中表示本实施形态的凹凸构造层142的凹凸图案80的概略俯视图的例,于图2(b)中表示图2(a)的概略俯视图中的切断线上的剖面图像。凹凸构造层142的剖面形状可如图2(b)所示般由相对平缓的倾斜面所构成,并自基材40表面朝向上方形成波形(本申请案中适当称为“波形构造”)。即,凹凸图案80的凸部可具有如自该基材40侧的底部向顶部变窄的剖面形状。凹凸构造层142的凹凸图案80于俯视下具有如下特征:如于图2(a)中表示概略俯视图的例般,具有多个凸部(白色部分)及多个凹部(黑色部分)弯曲(蜿蜒)延伸的细长形状,且其延伸方向、弯曲方向(弯曲方向)及延伸长度不规则。此种凹凸图案80与如条纹、波形条纹、锯齿状的有规则配向的图案或点状图案等明显不同,于该方面上,可与如规则性或包含较多直线的电路图案者进行区别。关于具有如上述的特征的凹凸构造层142,即便于与基材40的表面正交的任一方向上切断,亦反复出现凹凸剖面。又,凹凸图案80的多个凸部及凹部于俯视下亦可一部分或全部于途中分支(参照图2(a))。再者,于图2(a)中,凸部的间距以整体来看均匀。又,凹凸图案80的凹部亦可藉由凸部进行划分,并沿着凸部进行延伸。FIG. 2(a) shows an example of a schematic plan view of the concavo-convex pattern 80 of the concavo-convex structure layer 142 of the present embodiment, and FIG. 2(b) shows a cross-sectional image on a cutting line in the schematic plan view of FIG. 2(a). . The cross-sectional shape of the concavo-convex structure layer 142 may be composed of a relatively gentle slope as shown in FIG. That is, the convex portion of the concave-convex pattern 80 may have a cross-sectional shape that narrows from the bottom toward the top on the substrate 40 side. The concave-convex pattern 80 of the concave-convex structure layer 142 has the following characteristics in plan view: as shown in FIG. ═) An elongated shape that extends, and its extension direction, bending direction (bending direction) and extension length are irregular. This kind of concave-convex pattern 80 is obviously different from stripes, wavy stripes, zigzag regularly aligned patterns or dot patterns, etc. In this aspect, it can be distinguished from circuit patterns such as regular or more straight lines. Concave-convex structure layer 142 having the above-mentioned features repeatedly presents concavo-convex cross-sections even when cut in any direction perpendicular to the surface of base material 40 . In addition, some or all of the plurality of protrusions and recesses of the concave-convex pattern 80 may branch in the middle in plan view (see FIG. 2( a )). In addition, in FIG. 2( a ), the pitches of the protrusions are uniform as a whole. Moreover, the concave part of the concave-convex pattern 80 may also be divided by the convex part, and may extend along the convex part.

凹凸图案80除制成如上述的不规则的凹凸图案外,亦可制成点构造、角柱构造、由线与间隙所构成的条纹构造、圆柱状、圆锥状、圆锥台状、三角柱状、三角锥状、三角锥台状、四角柱状、四角锥状、四角锥台状、多角柱状、多角锥状、多角锥台状等支柱构造、孔构造、微透镜阵列构造、具有将光进行绕射的功能的构造等任意的图案。又,亦可制成如利用喷砂法所形成的不规则的微细凹凸图案。The concave-convex pattern 80 can also be made into a dot structure, a corner column structure, a stripe structure composed of lines and gaps, a cylindrical shape, a conical shape, a truncated cone shape, a triangular column shape, and a triangular shape in addition to the above-mentioned irregular concave-convex pattern. Cone, triangular truncated pyramid, quadrangular column, quadrangular pyramid, quadrangular truncated pyramid, polygonal column, polygonal pyramid, polygonal truncated pyramid and other pillar structures, hole structure, microlens array structure, with the ability to diffract light Arbitrary patterns such as functional structures. In addition, irregular fine concave-convex patterns such as those formed by sandblasting can also be formed.

于透明型发光元件100中,凹凸构造层142的凹凸图案80的凹凸的平均间距为150~650nm的范围内。若凹凸的平均间距未达上述下限,则有如下倾向:相对于可见光的波长,间距变得过小,而不会产生凹凸所导致的光的绕射,从而无法获得充分的光提取效果。另一方面,若凹凸的平均间距超过上述上限,则有如下倾向:凹凸所导致的光的散射的效果变大,而如下述的实施例及比较例中所示般,绕射光栅基板140的雾度值(雾度)超过2.0%,因此损害发光元件100的透明性,而变得不透明。凹凸图案80的凹凸的平均间距更佳为150~300nm的范围。于凹凸的平均间距处于该范围内的情形时,雾度值变得未达0.20%,而发光元件100的透明性更高。凹凸的深度分布的平均值较佳为20~200nm的范围内。若凹凸的深度分布的平均值未达上述下限,则有如下倾向:相对于可见光的波长,深度过小,因此变得难以产生所需的绕射,另一方面,若凹凸的深度分布的平均值超过上限,则有如下倾向:例如发光元件100的有机层94内部的电场分布变得不均匀而电场集中于特定位置,因此变得容易产生漏电流,或者元件寿命变短。凹凸的深度分布的平均值更佳为30~150nm的范围内。凹凸的深度的标准偏差较佳为10~100nm的范围内。若凹凸的深度的标准偏差未达上述下限,则有如下倾向:相对于可见光的波长,深度过小,因此变得难以产生所需的绕射,另一方面,若凹凸的深度的标准偏差超过上限,则有如下倾向:例如发光元件100的有机层94内部的电场分布变得不均匀而电场集中于特定位置,因此变得容易产生漏电流,或者元件寿命变短。凹凸的深度的标准偏差更佳为15~75nm的范围内。In the transparent light emitting element 100 , the average pitch of the concavities and convexes of the concavo-convex pattern 80 of the concavo-convex structure layer 142 is in the range of 150-650 nm. If the average pitch of the concavo-convex is less than the above lower limit, the pitch becomes too small for the wavelength of visible light to prevent diffraction of light by the concavo-convex, and a sufficient light extraction effect cannot be obtained. On the other hand, if the average pitch of the concavo-convex exceeds the above-mentioned upper limit, there is a tendency that the light scattering effect caused by the concavo-convex becomes large, and as shown in the following examples and comparative examples, the diffraction grating substrate 140 tends to be Since the haze value (haze) exceeds 2.0%, the transparency of the light-emitting element 100 is impaired and becomes opaque. The average pitch of the concavities and convexes of the concavo-convex pattern 80 is more preferably in the range of 150-300 nm. When the average pitch of the unevenness is in this range, the haze value becomes less than 0.20%, and the transparency of the light-emitting element 100 is higher. The average value of the depth distribution of the unevenness is preferably in the range of 20 to 200 nm. If the average value of the depth distribution of the unevenness does not reach the above-mentioned lower limit, there is a tendency that the depth is too small for the wavelength of visible light, so it becomes difficult to generate the desired diffraction. On the other hand, if the average value of the depth distribution of the unevenness When the value exceeds the upper limit, for example, the electric field distribution inside the organic layer 94 of the light-emitting element 100 becomes non-uniform and the electric field is concentrated at a specific position, so leakage current tends to occur easily, or the device life tends to be shortened. The average value of the depth distribution of the unevenness is more preferably in the range of 30 to 150 nm. The standard deviation of the depth of the unevenness is preferably in the range of 10 to 100 nm. If the standard deviation of the depth of the concavo-convex does not reach the above-mentioned lower limit, it tends to be as follows: relative to the wavelength of visible light, the depth is too small, so it becomes difficult to generate the required diffraction. On the other hand, if the standard deviation of the depth of the concavo-convex exceeds the If the upper limit is set, for example, the electric field distribution inside the organic layer 94 of the light-emitting element 100 becomes non-uniform and the electric field is concentrated at a specific position, which tends to cause leakage current or shorten the life of the element. The standard deviation of the depth of the unevenness is more preferably in the range of 15 to 75 nm.

本申请案中,所谓凹凸的平均间距,是指于对形成有凹凸的表面中的凹凸的间距(相邻的凸部彼此或相邻的凹部彼此的间隔)进行测定的情形时,凹凸的间距的平均值。此种凹凸的间距的平均值可藉由使用扫描式探针显微镜(例如,Hitachi High-TechScience股份有限公司制造的制品名“E-sweep”等),根据下述条件:In the present application, the average pitch of concavo-convex means the pitch of concav-convex when measuring the pitch of concavo-convex on the surface formed with concavo-convex (the distance between adjacent convex parts or the distance between adjacent concave parts). average value. The average value of the pitch of such unevenness can be obtained by using a scanning probe microscope (for example, the product name "E-sweep" manufactured by Hitachi High-TechScience Co., Ltd., etc.), according to the following conditions:

测定方式:悬臂间歇接触方式Measuring method: cantilever intermittent contact method

悬臂的材质:硅Cantilever Material: Silicon

悬臂的杆宽度:40μmCantilever rod width: 40 μm

悬臂的尖梢前端的直径:10nmThe diameter of the tip of the cantilever: 10 nm

对表面的凹凸进行测定而获得凹凸解析图像后,对该凹凸解析图像中的任意相邻的凸部彼此或相邻的凹部彼此的间隔100点以上进行测定,求出其算术平均而算出。After measuring the unevenness of the surface to obtain the unevenness analysis image, the interval between any adjacent convex portions or adjacent concave portions in the unevenness analysis image is measured at a distance of 100 points or more, and the arithmetic mean thereof is calculated.

又,于本申请案中,凹凸的深度分布的平均值及凹凸深度的标准偏差可以下述方式算出。使用扫描式探针显微镜,于上述条件下对任意的3μm见方(长3μm、宽3μm)或10μm见方(长10μm、宽10μm)的测定区域的凹凸形状进行测定,而求出凹凸解析图像。此时,以奈米尺度分别求出测定区域内的16384点(纵128点×横128点)以上的测定点中的凹凸高度的资料。再者,此种测定点的数量是根据所使用的测定装置的种类或设定而不同,例如于使用上述的Hitachi High-Tech Science股份有限公司制造的制品名“E-sweep”作为测定装置的情形时,可于3μm见方的测定区域内进行65536点(纵256点×横256点)的测定(256×256像素的解像度下的测定)。然后,关于以上述方式测定的凹凸高度(单位:nm),首先求出全部测定点中距离基材的底面的高度最高的测定点P。然后,以包含该测定点P且与基材的表面平行的面为基准面(水平面),求出距离该基准面的深度值(自测定点P的距离基材的高度值减去各测定点的距离基材的高度值而获得的差值)作为凹凸深度的资料。再者,此种凹凸深度资料可藉由测定装置(例如Hitachi High-Tech Science股份有限公司制造的制品名“E-sweep”),利用测定装置中的软体等自动地计算而求出,将此种自动地计算而求出的值用作凹凸深度的资料。以上述方式求出各测定点的凹凸深度的资料后,采用可藉由求出其算术平均及标准偏差而算出的值分别作为凹凸的深度分布的平均值及凹凸深度的标准偏差。于本说明书中,凹凸的平均间距及凹凸的深度分布的平均值与形成有凹凸的表面的材料无关,可通过如上述的测定方法而求出。In addition, in the present application, the average value of the depth distribution of the unevenness and the standard deviation of the unevenness depth can be calculated as follows. Using a scanning probe microscope, under the above-mentioned conditions, the concave-convex shape of an arbitrary measurement area of 3 μm square (length 3 μm, width 3 μm) or 10 μm square (length 10 μm, width 10 μm) is measured to obtain a concave-convex analysis image. At this time, the data of the height of the concavities and convexities at the measurement points of 16384 or more points (128 points in length x 128 points in width) in the measurement area were obtained on a nanometer scale. In addition, the number of such measuring points varies depending on the type or setting of the measuring device used. For example, when using the aforementioned Hitachi High-Tech Science Co., Ltd. product name "E-sweep" as the measuring device In some cases, 65536 points (256 points in length x 256 points in width) can be measured in a 3 μm square measurement area (measurement at a resolution of 256×256 pixels). Then, regarding the unevenness height (unit: nm) measured as described above, first, the measurement point P having the highest height from the bottom surface of the substrate among all the measurement points is obtained. Then, with the plane parallel to the surface of the substrate including the measurement point P as a reference plane (horizontal plane), the depth value from the reference plane is obtained (subtracting the height value of each measurement point from the substrate from the measurement point P) The difference obtained from the height value of the distance from the base material) is used as the data of the concave-convex depth. Furthermore, this kind of concave-convex depth data can be obtained by automatic calculation using software in the measuring device, etc. The value obtained by this automatic calculation is used as the data of the depth of the concavo-convex. After obtaining the data of the depth of irregularities at each measurement point as described above, values that can be calculated by obtaining the arithmetic mean and standard deviation thereof are used as the average value of the distribution of irregularities and the standard deviation of the depth of irregularities, respectively. In this specification, the average pitch of the unevenness and the average value of the depth distribution of the unevenness can be obtained by the above-mentioned measuring method regardless of the material of the surface on which the unevenness is formed.

凹凸图案80可为如下近似周期图案:对解析其凹凸的形状而获得的凹凸解析图像实施二维高速傅立叶变换处理而获得的傅立叶变换像显现如图3所示的圆状或圆环状的花样,即凹凸的朝向没有指向性但凹凸的间距具有分布。具有此种近似周期图案的基板只要其凹凸间距的分布实现绕射可见光线,则较佳用于如有机EL元件的面发光元件所使用的绕射光栅基板。The concavo-convex pattern 80 may be an approximate periodic pattern: the Fourier transform image obtained by performing two-dimensional high-speed Fourier transform processing on the concavo-convex analysis image obtained by analyzing the concavo-convex shape shows a circular or annular pattern as shown in FIG. 3 , that is, the orientation of the bumps has no directivity but the pitch of the bumps has a distribution. A substrate having such an approximately periodic pattern is preferably used as a diffraction grating substrate used in a surface light-emitting element such as an organic EL element, as long as the distribution of the concave-convex pitch can diffract visible light.

再者,傅立叶变换像可显现如图3所示般以波数的绝对值为0μm-1的原点为大致中心的圆状或圆环状的花样,上述圆状或圆环状的花样可存在于波数的绝对值成为1.54~6.67μm-1的范围内、更佳为成为3.33~6.67μm-1的范围内的区域内。傅立叶变换像的圆状的花样是于傅立叶变换像中由于亮点集合而被观察到的花样。此处所谓“圆状”,意指亮点集合而成的花样看似大致圆形的形状,且亦包含外形的一部分看似成为凸状或凹状者的概念。亦有亮点集合而成的花样看似大致圆环状的情况,将该情形表述为“圆环状”。再者,“圆环状”是如下概念:包含环的外侧的圆或内侧的圆的形状看似大致圆形的形状者,亦包含该环的外侧的圆或内侧的圆的外形的一部分看似成为凸状或凹状者。又,所谓“圆状或圆环状的花样存在于波数的绝对值成为1.54~6.67μm-1的范围内、更佳为3.33~6.67μm-1的范围内的区域内”,是指如下情况:构成傅立叶变换像的亮点中30%以上(更佳为50%以上、进而更佳为80%以上、尤佳为90%以上)的亮点存在于波数的绝对值成为1.54~6.67的范围内、更佳为3.33~6.67μm-1的范围内的区域内。再者,关于凹凸图案与傅立叶变换像的关系,可知下述情况。于凹凸图案本身间距没有分布或没有指向性的情形时,傅立叶变换像亦以无规律图案(没有花样)显现,但于凹凸图案于XY方向作为整体为等向但间距存在分布的情形时,显现圆或圆环状的傅立叶变换像。又,于凹凸图案的凹凸具有单一的间距的情形时,有傅立叶变换像中所显现的圆环变得锐利的倾向。Furthermore, as shown in FIG. 3, the Fourier transform image can show a circular or annular pattern with the origin having an absolute value of wave number 0 μm -1 as the approximate center. The circular or annular pattern can exist in The absolute value of the wave number is in the range of 1.54 to 6.67 μm −1 , more preferably in the range of 3.33 to 6.67 μm −1 . The circular pattern in the Fourier transform image is a pattern observed due to the aggregation of bright spots in the Fourier transform image. The term "round shape" here means that a pattern formed by a collection of bright spots looks like a roughly circular shape, and also includes the concept that a part of the shape looks like a convex shape or a concave shape. There is also a case where a pattern formed by a collection of bright spots looks roughly circular, and this is described as "circular". In addition, "annulus shape" is a concept that includes the shape of the outer circle or the inner circle of the ring that looks like a substantially circular shape, and also includes a part of the outer circle or the inner circle of the ring. Appears to be convex or concave. Also, "a circular or annular pattern exists in a region where the absolute value of the wave number is within the range of 1.54 to 6.67 μm -1 , more preferably within the range of 3.33 to 6.67 μm -1 " means the following : 30% or more (more preferably 50% or more, still more preferably 80% or more, and most preferably 90% or more) of the bright spots constituting the Fourier transform image exist within the range in which the absolute value of the wavenumber is 1.54 to 6.67, More preferably, it is in a region within a range of 3.33 to 6.67 μm −1 . Furthermore, the following is known about the relationship between the concavo-convex pattern and the Fourier transform image. When the pitch of the concave-convex pattern itself has no distribution or no directivity, the Fourier transform image also appears as an irregular pattern (no pattern), but when the concave-convex pattern is isotropic in the XY direction as a whole but the pitch is distributed, it appears Fourier transform image of a circle or donut. Also, when the concavities and convexities of the concavo-convex pattern have a single pitch, the rings appearing in the Fourier transform image tend to be sharp.

上述凹凸解析图像的二维高速傅立叶变换处理可藉由使用具备二维高速傅立叶变换处理软体的电脑的电子图像处理而容易地进行。The above-mentioned two-dimensional fast Fourier transform processing of the concave-convex analysis image can be easily performed by electronic image processing using a computer equipped with two-dimensional high-speed Fourier transform processing software.

再者,以将凸部以白色表示,将凹部以黑色表示的方式对凹凸解析图像进行处理,藉此可获得如图6所示的俯视解析图像(黑白图像)。图6是表示凹凸构造层142中的测定区域的俯视解析图像的一例的图。Furthermore, by processing the concave-convex analysis image so that the convex portions are represented in white and the concave portions are represented in black, a top view analytical image (black and white image) as shown in FIG. 6 can be obtained. FIG. 6 is a diagram showing an example of a planar analysis image of a measurement region in the concavo-convex structure layer 142 .

将俯视解析图像的凸部(白色显示部)的宽度称为“凸部的宽度”。关于此种凸部的宽度的平均值,可藉由自俯视解析图像的凸部中选择任意100个以上的凸部,针对上述100个以上的凸部,分别测定与凸部的延伸方向俯视下大致正交的方向上的自凸部的边界直至相反侧的边界的长度,求出其算术平均而算出。The width of the convex portion (white display portion) in the plan view analysis image is referred to as “the width of the convex portion”. Regarding the average value of the width of such a convex portion, it is possible to select any 100 or more convex portions from the convex portions of the plan view analysis image, and measure the extension direction of the convex portion for each of the above-mentioned 100 or more convex portions. The length from the boundary of the convex portion to the boundary on the opposite side in the substantially perpendicular direction was obtained by calculating the arithmetic mean thereof.

再者,对凸部的宽度的平均值进行计算时,如上所述,使用自俯视解析图像的凸部随机抽选的位置的值,但凸部分支的位置的值亦可不使用。于凸部中,某区域是否为分支的区域例如可根据该区域是否延伸一定长度以上而进行判定。更具体而言,可根据该区域的延伸长度相对于该区域的宽度的比是否为一定(例如1.5)以上而进行判定。In addition, when calculating the average value of the width of a convex part, the value of the position randomly selected from the convex part of a top view analysis image is used as mentioned above, However, the value of the position of the branch of a convex part does not need to be used. In the convex portion, whether or not a certain region is a branched region can be determined, for example, based on whether or not the region extends over a certain length. More specifically, it can be determined based on whether or not the ratio of the extension length of the region to the width of the region is constant (for example, 1.5) or more.

使用图7(a)及7(b),对针对向某方向延伸的凸部的中途位置上向与该凸部的延伸轴线大致正交的方向突出的区域,判定该区域是否分支的方法的一例进行说明,此处,所谓凸部的延伸轴线,于将是否分支的判定对象区域自凸部排除的情形时,是由凸部的外缘的形状而定的沿着凸部的延伸方向的假想轴线。更具体而言,所谓凸部的延伸轴线,是与凸部的延伸方向正交的以通过凸部的宽度的大致中心点的方式所划的线。图7(a)及图7(b)均为仅将俯视解析图像中的凸部的一部分选出而进行说明的概要图,区域S显示凸部。于图7(a)及图7(b)中,于凸部的中途位置上突出的区域A1、A2被选定作为是否分支的判定对象区域。于该情形时,于自凸部将区域A1、A2除外的情形时,将延伸轴线L1、L2界定为与凸部的延伸方向正交的通过凸部的宽度的大致中心点的线。此种延伸轴线可藉由利用电脑的图像处理而进行界定,亦可由实施解析作业的作业者而进行界定,亦可藉由利用电脑的图像处理及作业者的人工作业两者而进行界定。于图7(a)中,关于区域A1,是于沿着延伸轴线L1进行延伸的凸部的中途位置上,向与延伸轴线L1正交的方向突出。于图7(b)中,关于区域A2,是于沿着延伸轴线L2进行延伸的凸部的中途位置上,向与延伸轴线L2正交的方向突出。再者,关于向与延伸轴线L1、L2正交的方向倾斜突出的区域,亦只要使用与以下所述的关于区域A1、A2的看法相同的看法,判定是否分支即可。Using FIGS. 7( a ) and 7 ( b ), for a region protruding in a direction approximately perpendicular to the extension axis of the convex portion at a midway position of a convex portion extending in a certain direction, a method of judging whether the region is branched As an example, here, the so-called extension axis of the convex portion is defined as the axis along the extending direction of the convex portion determined by the shape of the outer edge of the convex portion when the region to be determined whether to branch is excluded from the convex portion. imaginary axis. More specifically, the extension axis of the convex portion is a line drawn so as to pass through the substantially center point of the width of the convex portion, which is perpendicular to the extending direction of the convex portion. 7( a ) and FIG. 7( b ) are schematic diagrams for explaining only a part of the convex portion in the plan view analysis image, and the region S shows the convex portion. In FIG. 7( a ) and FIG. 7( b ), areas A1 and A2 protruding from the midway position of the convex portion are selected as areas to be determined whether or not to branch. In this case, when the regions A1 and A2 are excluded from the convex portion, the extension axes L1 and L2 are defined as a line passing through the substantially center point of the width of the convex portion perpendicular to the extending direction of the convex portion. Such an extension axis may be defined by image processing using a computer, may be defined by an operator performing analysis work, or may be defined by both image processing using a computer and manual work by an operator. In FIG. 7( a ), the region A1 protrudes in a direction perpendicular to the extension axis L1 at a midway position of the convex portion extending along the extension axis L1 . In FIG. 7( b ), the region A2 protrudes in a direction perpendicular to the extension axis L2 at a midway position of the convex portion extending along the extension axis L2 . Furthermore, regarding the regions protruding obliquely in the direction perpendicular to the extension axes L1, L2, it is sufficient to determine whether or not to branch using the same viewpoint as the region A1, A2 described below.

根据上述判定方法,由于区域A1的延伸长度d2相对于区域A1的宽度d1的比为大约0.5(未达1.5),故而判定区域A1并非分支的区域。于该情形时,通过区域A1且与延伸轴线L1正交的方向上的长度d3是视作用以算出凸部的宽度的平均值的测定值之一。另一方面,由于区域A2的延伸长度d5相对于区域A2的宽度d4的比为大约2(1.5以上),故而判定区域A2为分支的区域。于该情形时,通过区域A2且与延伸轴线L2正交的方向上的长度d6不被视作用以算出凸部的宽度的平均值的测定值之一。According to the above determination method, since the ratio of the extension length d2 of the area A1 to the width d1 of the area A1 is about 0.5 (less than 1.5), it is determined that the area A1 is not a branched area. In this case, the length d3 in the direction passing through the region A1 and perpendicular to the extension axis L1 is one of the measured values used to calculate the average value of the width of the convex portion. On the other hand, since the ratio of the extension length d5 of the area A2 to the width d4 of the area A2 is about 2 (1.5 or more), it is determined that the area A2 is a branched area. In this case, the length d6 in the direction passing through the region A2 and perpendicular to the extension axis L2 is not regarded as one of the measured values for calculating the average value of the width of the convex portion.

于凹凸构造层142的凹凸图案80中,俯视下与凸部的延伸方向大致正交的方向上的凸部的宽度可一定。凸部的宽度是否一定可基于藉由上述测定而获得的100点以上的凸部的宽度而判定。具体而言,自100点以上的凸部的宽度算出凸部的宽度的平均值及凸部的宽度的标准偏差。然后,将藉由用凸部的宽度的标准偏差除以凸部的宽度的平均值而算出的值(凸部的宽度的标准偏差/凸部的宽度的平均值)定义为凸部的宽度的变异系数。关于该变异系数,凸部的宽度越一定(宽度的变动较少),该变异系数的值变得越小。因此,可藉由变异系数是否为特定值以下,而判定凸部的宽度是否一定。例如于变异系数为0.25以下的情形时,可定义为凸部的宽度一定。In the concave-convex pattern 80 of the concave-convex structure layer 142 , the width of the convex portion in the direction substantially perpendicular to the extending direction of the convex portion in plan view can be constant. Whether or not the width of the convex portion is constant can be determined based on the width of the convex portion of 100 points or more obtained by the above measurement. Specifically, the average value of the width of the protrusions and the standard deviation of the width of the protrusions were calculated from the widths of the protrusions at 100 or more points. Then, a value calculated by dividing the standard deviation of the width of the convex portion by the average value of the width of the convex portion (standard deviation of the width of the convex portion/average value of the width of the convex portion) was defined as the value of the width of the convex portion coefficient of variation. Regarding this coefficient of variation, the more constant the width of the convex portion is (the smaller the variation in width), the smaller the value of this coefficient of variation becomes. Therefore, whether or not the width of the convex portion is constant can be determined by whether or not the coefficient of variation is equal to or less than a specific value. For example, when the coefficient of variation is 0.25 or less, it can be defined that the width of the convex portion is constant.

又,如图6所示般,凹凸图案80所包含的凸部(白色部分)的延伸方向于俯视上不规则地分布。即,凸部并非有规则排列的条纹状或有规律配置的点形状等,可成为向不规则方向延伸的形状。又,于测定区域、即凹凸图案的特定区域中,每单位面积的区域所包含的凸部于俯视上的轮廓线包含较曲线区间多的直线区间。Moreover, as shown in FIG. 6, the extending direction of the convex part (white part) contained in the uneven|corrugated pattern 80 is distributed irregularly in planar view. That is, the protrusions may not be in the shape of regularly arranged stripes or regularly arranged dots, but may have a shape extending in irregular directions. In addition, in the measurement area, that is, the specific area of the concave-convex pattern, the contour lines of the convex portions included in the area per unit area include more linear sections than curved sections in plan view.

所谓“包含较曲线区间多的直线区间”,意指如下情况,即未成为如于凸部的轮廓线上的全部区间中弯曲的区间占大部分的凹凸图案。关于凸部于俯视下的轮廓线是否包含较曲线区间多的直线区间,例如可藉由使用以下所示的2种曲线区间的定义方法中的任一者而进行判定。"Containing more straight-line sections than curved sections" means that there is no concavo-convex pattern in which curved sections account for most of all sections on the contour line of a convex part. Whether or not the contour line of a convex portion in a plan view includes more straight-line sections than curved sections can be determined by, for example, using any one of the following two methods of defining curved sections.

<曲线区间的第1定义方法><The first definition method of the curve section>

于曲线区间的第1定义方法中,曲线区间被定义为如下区间,即于藉由以凸部的宽度的平均值的π(圆周率)倍的长度划分凸部于俯视下的轮廓线而形成多个区间的情形时,区间的两端点间的直线距离相对于两端点间的轮廓线的长度的比成为0.75以下。又,直线区间被定义为上述多个区间中曲线区间以外的区间、即上述比大于0.75的区间。以下,参照图8(a),对使用上述第1定义方法而判定凸部于俯视下的轮廓线是否包含较曲线区间多的直线区间的程序的一例进行说明。图8(a)是表示凹凸图案的俯视解析图像的一部分的图,为了方便起见,将凹部涂白而进行表示。区域S1是表示凸部,区域S2是表示凹部。In the first definition method of the curved section, the curved section is defined as an interval formed by dividing the contour line of the convex portion in plan view by a length of π (pi) times the average value of the width of the convex portion. In the case of a section, the ratio of the straight-line distance between the two end points of the section to the length of the contour line between the two end points is 0.75 or less. In addition, the linear section is defined as a section other than the curved section among the above-mentioned plurality of sections, that is, a section in which the above-mentioned ratio is greater than 0.75. Hereinafter, with reference to FIG. 8( a ), an example of a program for determining whether or not the contour line of a convex portion in plan view includes more straight-line sections than curved sections using the above-mentioned first definition method will be described. FIG. 8( a ) is a diagram showing a part of a plan view analysis image of a concavo-convex pattern, and for convenience, the concave portions are shown in white. The region S1 represents a convex portion, and the region S2 represents a concave portion.

程序1-1Procedure 1-1

自测定区域内的多个凸部选择一个凸部。决定该凸部的轮廓线X上的任意位置为起点。于图8(a)中,作为一例,将点A设定为起点。于凸部的轮廓线X上,自该起点以特定的间隔设置基准点。此处,特定的间隔是凸部的宽度的平均值的π(圆周率)/2倍的长度。于图8(a)中,作为一例,依序设定点B、点C及点D。One convex portion is selected from the plurality of convex portions in the measurement area. An arbitrary position on the contour line X of the convex portion is determined as a starting point. In FIG. 8( a ), as an example, point A is set as a starting point. On the contour line X of the convex portion, reference points are set at specific intervals from the starting point. Here, the specific interval is the length of π (pi)/2 times the average value of the width of the convex portion. In FIG. 8( a ), as an example, point B, point C, and point D are sequentially set.

程序1-2Procedure 1-2

若将作为基准点的点A~D设置于凸部的轮廓线X上,则设定判定对象的区间。此处,将起点及终点为基准点,且包含成为中间点的基准点的区间设定为判定对象。于图8(a)的例中,于选择点A作为区间的起点的情形时,自点A数第2个设定的点C成为区间的终点。关于距点A的间隔,此处设定为凸部的宽度的平均值的π/2倍的长度,因此点C是沿着轮廓线X距离点A仅凸部的宽度的平均值的π倍的长度者。同样地,于选择点B作为区间的起点的情形时,自点B数第2个设定的点D成为区间的终点。再者,此处,以所设定的顺序设定供成为对象的区间,且设为点A为最初所设定的点。即,首先将点A及点C的区间(区间AC)设为处理对象的区间。然后,对图8(a)所示的连接点A及点C的凸部的轮廓线X的长度La、与点A及点C之间的直线距离Lb进行测定。If the points A to D serving as reference points are set on the contour line X of the convex portion, the section to be judged is set. Here, the starting point and the ending point are used as reference points, and a section including the reference point serving as an intermediate point is set as a judgment object. In the example of FIG. 8( a ), when point A is selected as the start point of the section, point C set second from point A becomes the end point of the section. Regarding the distance from point A, here it is set to be the length of π/2 times the average value of the width of the convex portion, so point C is only π times the average value of the width of the convex portion from point A along the contour line X the length of those. Similarly, when point B is selected as the start point of the section, point D set second from point B becomes the end point of the section. In addition, here, the sections to be targeted are set in the order of setting, and the point A is assumed to be the first set point. That is, first, the section between point A and point C (section AC) is set as the section to be processed. Then, the length La of the contour line X of the convex portion connecting the points A and C shown in FIG. 8( a ) and the straight-line distance Lb between the points A and C were measured.

程序1-3Procedure 1-3

使用于程序1-2中所测得的长度La及直线距离Lb,计算直线距离Lb相对于长度La的比(Lb/La)。于该比成为0.75以下的情形时,判定凸部的轮廓线X的成为区间AC的中点的点B为存在于曲线区间的点。另一方面,于上述比大于0.75的情形时,判定点B为存在于直线区间的点。再者,于图8(a)所示的例中,因上述比(Lb/La)成为0.75以下,故而判定点B为存在于曲线区间的点。Using the length La and the straight-line distance Lb measured in procedure 1-2, the ratio (Lb/La) of the straight-line distance Lb to the length La is calculated. When the ratio is equal to or less than 0.75, it is determined that the point B serving as the midpoint of the section AC of the contour line X of the convex portion exists in the curved section. On the other hand, when the above-mentioned ratio is greater than 0.75, it is determined that the point B exists in the straight line section. In addition, in the example shown in FIG.8(a), since the said ratio (Lb/La) becomes 0.75 or less, it is determined that the point B exists in the curve section.

程序1-4Procedure 1-4

关于分别选择程序1-1中所设定的各点作为起点的情形时,实行程序1-2及程序1-3。When each point set in the program 1-1 is selected as a starting point, the program 1-2 and the program 1-3 are executed.

程序1-5Procedure 1-5

针对测定区域内的全部凸部,实行程序1-1~程序1-4。Procedures 1-1 to 1-4 are executed for all convex portions in the measurement area.

程序1-6Procedure 1-6

于针对测定区域内的全部凸部,所设定的全部点中被判定为存在于直线区间的点的点的比率为整体的50%以上的情形时,判定凸部于俯视下的轮廓线包含较曲线区间多的直线区间。另一方面,于针对测定区域内的全部凸部,设所设定的全部点中被判定为存在于直线区间的点的点的比率未达整体的50%的情形时,判定凸部于俯视下的轮廓线包含较直线区间多的曲线区间。When the ratio of the points determined to exist in the straight-line section among all the set points for all the convex parts in the measurement area is 50% or more of the whole, it is determined that the contour line of the convex part in plan view includes There are more linear intervals than curved intervals. On the other hand, for all the convex parts in the measurement area, if the ratio of the points determined to exist in the straight line section among all the set points is less than 50% of the whole, it is determined that the convex part is in the plan view. The lower contour line contains more curved intervals than straight intervals.

上述程序1-1~程序1-6的处理可藉由测定装置所具备的测定功能而进行,亦可藉由与上述测定装置不同的解析用软体等的实行而进行,亦可以手动进行。The processing of the above procedures 1-1 to 1-6 may be performed by a measurement function included in the measurement device, may be performed by an analysis software or the like different from the above measurement device, or may be performed manually.

再者,关于上述程序1-1中于凸部的轮廓线上设定点的处理,只要于由于环凸部1周,或超出测定区域而无法设定较上述点更多的点的情形时结束处理即可。又,关于最初所设定的点与最后所设定的点的外侧的区间,由于无法算出上述比(Lb/La),故而设为上述判定的对象外即可。又,关于轮廓线的长度未满凸部的宽度的平均值的π倍的凸部,设为上述判定的对象外即可。Furthermore, regarding the process of setting points on the contour line of the convex part in the above-mentioned program 1-1, only when it is impossible to set more points than the above-mentioned points because the convex part circles around or exceeds the measurement area. Just finish processing. Also, since the above-mentioned ratio (Lb/La) cannot be calculated for the section outside the first set point and the last set point, it may be excluded from the above-mentioned determination. In addition, a convex portion whose length of the contour line is less than π times the average value of the width of the convex portion may be excluded from the above determination.

<曲线区间的第2定义方法><Second definition method of curve interval>

于曲线区间的第2定义方法中,曲线区间被定义为如下区间,即于藉由以凸部的宽度的平均值的π(圆周率)倍的长度划分凸部于俯视下的轮廓线而形成多个区间的情形时,连结区间的一端(点A)及该区间的中点(点B)的线段(线段AB)、与连结该区间的另一端(点C)及该区间的中点(点B)的线段(线段CB)所成的2个角度中较小者(成为180°以下者)的角度成为120°以下。又,直线区间被定义为上述多个区间中曲线区间以外的区间,即上述角度大于120°的区间。以下,参照图8(b),对使用上述第2定义方法而判定凸部于俯视下的轮廓线是否包含较曲线区间多的直线区间的程序的一例进行说明。图8(b)是表示与图8(a)相同的凹凸图案的俯视解析图像的一部分的图。In the second definition method of the curved section, the curved section is defined as an interval formed by dividing the contour line of the convex section in plan view by a length of π (circumference) times the average value of the width of the convex section. In the case of an interval, the line segment (line segment AB) connecting one end of the interval (point A) and the midpoint of the interval (point B) and the other end of the interval (point C) and the midpoint of the interval (point Of the two angles formed by the line segment (line segment CB) of B), the angle of the smaller one (the one that becomes 180° or less) is 120° or less. In addition, the linear section is defined as a section other than the curved section among the above-mentioned multiple sections, that is, a section in which the above-mentioned angle is larger than 120°. Hereinafter, with reference to FIG. 8( b ), an example of a program for determining whether or not the contour line of a convex portion in plan view includes more straight-line sections than curved sections using the above-mentioned second definition method will be described. FIG. 8( b ) is a diagram showing a part of a plan view analysis image of the same concavo-convex pattern as in FIG. 8( a ).

程序2-1Procedure 2-1

自测定区域内的多个凸部选择一个凸部。决定该凸部的轮廓线X上的任意位置为起点。于图8(b)中,作为一例,将点A设定为起点。于凸部的轮廓线X上,自该起点以特定的间隔设置基准点。此处,特定的间隔是凸部的宽度的平均值的π(圆周率)/2倍的长度。于图8(b)中,作为一例,依序设定点B、点C及点D。One convex portion is selected from the plurality of convex portions in the measurement area. An arbitrary position on the contour line X of the convex portion is determined as a starting point. In FIG.8(b), point A is set as a start point as an example. On the contour line X of the convex portion, reference points are set at specific intervals from the starting point. Here, the specific interval is the length of π (pi)/2 times the average value of the width of the convex portion. In FIG. 8( b ), as an example, point B, point C, and point D are sequentially set.

程序2-2Procedure 2-2

若将作为基准点的点A~D设置于凸部的轮廓线X上,则设定判定对象的区间。此处,将起点及终点为基准点,且包含成为中间点的基准点的区间设定为判定对象。于图8(b)的例中,于选择点A作为区间的起点的情形时,自点A数第2个设定的点C成为区间的终点。关于距点A的间隔,此处设定为凸部的宽度的平均值的π/2倍的长度,因此点C是沿着轮廓线X距离点A仅凸部的宽度的平均值的π倍的长度者。同样地,于选择点B作为区间的起点的情形时,自点B数第2个设定的点D成为区间的终点。再者,此处,以所设定的顺序设定供成为对象的区间,且设为点A为最初所设定的点。即,首先将点A及点C的区间(区间AC)设为处理对象的区间。然后,对线段AB与线段CB所成的2个角度中较小者(成为180°以下者)的角度θ进行测定。If the points A to D serving as reference points are set on the contour line X of the convex portion, the section to be judged is set. Here, the starting point and the ending point are used as reference points, and a section including the reference point serving as an intermediate point is set as a judgment object. In the example of FIG. 8( b ), when point A is selected as the start point of the section, point C set second from point A becomes the end point of the section. Regarding the distance from point A, here it is set to be the length of π/2 times the average value of the width of the convex portion, so point C is only π times the average value of the width of the convex portion from point A along the contour line X the length of those. Similarly, when point B is selected as the start point of the section, point D set second from point B becomes the end point of the section. In addition, here, the sections to be targeted are set in the order of setting, and the point A is assumed to be the first set point. That is, first, the section between point A and point C (section AC) is set as the section to be processed. Then, the angle θ of the smaller (180° or less) of the two angles formed by the line segment AB and the line segment CB is measured.

程序2-3Procedure 2-3

于角度θ成为120°以下的情形时,判定点B为存在于曲线区间的点,另一方面,于角度θ大于120°的情形时,判定点B为存在于直线区间的点。再者,于图8(b)所示的例中,由于角度θ成为120°以下,故而判定点B为存在于曲线区间的点。When the angle θ is less than or equal to 120°, the determination point B is a point existing in the curved section, and on the other hand, when the angle θ is larger than 120°, the determination point B is a point existing in the straight line section. In addition, in the example shown in FIG.8(b), since angle (theta) becomes 120 degrees or less, it determines that point B exists in the curve section.

程序2-4Procedure 2-4

关于分别选择程序2-1中所设定的各点作为起点的情形,实行程序2-2及程序2-3。Regarding the case where each point set in the program 2-1 is selected as the starting point, the program 2-2 and the program 2-3 are executed.

程序2-5Procedure 2-5

针对测定区域内的全部凸部,实行程序2-1~程序2-4。Procedures 2-1 to 2-4 are executed for all convex portions in the measurement area.

程序2-6Procedure 2-6

于针对测定区域内的全部凸部,所设定的全部点中被判定为存在于直线区间的点的点的比率为整体的70%以上的情形时,判定凸部于俯视下的轮廓线包含较曲线区间多的直线区间。另一方面,于针对测定区域内的全部凸部,所设定的全部点中被判定为存在于直线区间的点的点的比率未达整体的70%的情形时,判定凸部于俯视下的轮廓线包含较直线区间多的曲线区间。When the ratio of the points determined to exist in the straight-line section among all the set points for all the convex parts in the measurement area is 70% or more of the whole, it is determined that the contour line of the convex part in plan view includes There are more linear intervals than curved intervals. On the other hand, when the ratio of the points determined to exist in the straight-line section among all the set points for all the convex parts in the measurement area is less than 70% of the whole, it is judged that the convex part is in a plane view. The contour line of contains more curved intervals than straight intervals.

上述程序2-1~2-6的处理可藉由测定装置所具备的测定功能而进行,亦可藉由实行与上述测定装置不同的解析用软体等而进行,亦可以手动进行。The processing of the above procedures 2-1 to 2-6 may be performed by a measurement function included in the measurement device, may be performed by executing analysis software or the like different from the measurement device, or may be performed manually.

再者,关于上述程序2-1中于凸部的轮廓线上设定点的处理,只要于由于环凸部1周,或超出测定区域而无法设定较上述点更多的点的情形时结束处理即可。又,关于最初所设定的点与最后所设定的点的外侧的区间,由于无法算出上述角度θ,故而设为上述判定的对象外即可。又,关于轮廓线的长度未满凸部的宽度的平均值的π倍的凸部,设为上述判定的对象外即可。Furthermore, regarding the processing of setting points on the contour line of the convex part in the above-mentioned program 2-1, only when more points than the above-mentioned points cannot be set because the convex part circles around or exceeds the measurement area Just finish processing. Also, since the above-mentioned angle θ cannot be calculated for the section outside the first set point and the last set point, it may be excluded from the above-mentioned determination. In addition, a convex portion whose length of the contour line is less than π times the average value of the width of the convex portion may be excluded from the above determination.

如上所述,可藉由使用曲线区间的第1及第2定义方法中的任一者,而针对测定区域,判定凸部于俯视下的轮廓线X是否包含较曲线区间多的直线区间。再者,于某凹凸构造层142的凹凸图案80中,“每单位面积的区域所包含的凸部于俯视下的轮廓线是否包含较曲线区间多的直线区间”可基于自凹凸构造层142的凹凸图案80随机抽选的一个测定区域的判定结果而判定。或者,根据对凹凸构造层142的凹凸图案80的多个不同的测定区域的判定结果综合性地进行判定。于该情形时,例如亦可采用对多个不同的测定区域的判定结果中较多者的判定结果作为“每单位面积的区域所包含的凸部于俯视下的轮廓线是否包含较曲线区间多的直线区间”的判定结果。As described above, by using either of the first and second definition methods of the curved section, it can be determined whether or not the contour line X of the convex portion in plan view includes more straight section than the curved section for the measurement area. Furthermore, in the concavo-convex pattern 80 of a certain concavo-convex structure layer 142, "whether the contour line of the convex part included in the area per unit area contains more straight-line intervals than the curved intervals" can be based on the information from the concavo-convex structure layer 142 The concavo-convex pattern 80 is determined based on the determination result of one measurement area randomly selected. Alternatively, the judgment is made comprehensively based on the judgment results of a plurality of different measurement regions of the uneven pattern 80 of the uneven structure layer 142 . In this case, for example, the judgment result of the more judgment results for a plurality of different measurement areas may be used as "whether the contour line of the convex part included in the area per unit area contains more than the curve section in plan view?" The judgment result of the straight line interval".

可使用无机材料作为凹凸构造层142的材料,尤其是可使用二氧化硅、SiN、SiON等Si系材料;TiO2等Ti系材料;ITO(氧化铟锡)系材料;ZnO、ZnS、ZrO2、Al2O3、BaTiO3、SrTiO2等无机材料。其中,就成膜性或折射率的关系而言,较佳为二氧化硅或TiO2。该等无机材料可为藉由溶胶凝胶法等而形成的材料(溶胶凝胶材料)。又,亦可使用以聚硅氮烷溶液为原料而形成的SiOX、SiNX、SiOXNY等作为凹凸构造层142的材料。进而,亦可使用硬化性树脂作为凹凸构造层142的材料。作为硬化性树脂,例如可使用光硬化及热硬化、湿气硬化型、化学硬化型(二液混合)等的树脂。具体而言,可列举:环氧系、丙烯酸系、甲基丙烯酸系、乙烯醚系、氧杂环丁烷系、胺酯(urethane)系、三聚氰胺系、脲系、聚酯系、聚烯烃系、酚系、交联型液晶系、氟系、聚硅氧系、聚酰胺系等单体、低聚物、聚合物等各种树脂。Inorganic materials can be used as the material of the concave-convex structure layer 142, especially Si-based materials such as silicon dioxide, SiN, and SiON; Ti-based materials such as TiO 2 ; ITO (indium tin oxide)-based materials; ZnO, ZnS, ZrO 2 . , Al 2 O 3 , BaTiO 3 , SrTiO 2 and other inorganic materials. Among these, silicon dioxide or TiO 2 is preferable in terms of film-forming properties and the relationship of the refractive index. These inorganic materials may be materials formed by a sol-gel method or the like (sol-gel materials). In addition, SiOx , SiNx , SiOxNY , etc. formed using polysilazane solution as a raw material may also be used as the material of the concavo - convex structure layer 142. Furthermore, curable resin may also be used as the material of the concavo-convex structure layer 142 . As the curable resin, resins such as photocurable and thermally curable, moisture curable, chemically curable (two-liquid mixture) and the like can be used, for example. Specifically, epoxy-based, acrylic-based, methacrylic-based, vinyl ether-based, oxetane-based, urethane-based, melamine-based, urea-based, polyester-based, and polyolefin-based , phenolic, cross-linked liquid crystal, fluorine, polysiloxane, polyamide and other monomers, oligomers, polymers and other resins.

凹凸构造层142的材料亦可为于上述的无机材料或硬化性树脂中含有紫外线吸收材料者。紫外线吸收材料有藉由吸收紫外线将光能转换为如热的无害形态而抑制膜的劣化的作用。作为紫外线吸收剂,可使用习知公知者,例如可使用苯并三唑系吸收剂、三嗪系吸收剂、水杨酸衍生物系吸收剂、二苯甲酮系吸收剂等。The material of the concavo-convex structure layer 142 may be one containing an ultraviolet absorbing material in the above-mentioned inorganic material or curable resin. The ultraviolet absorbing material has a function of suppressing deterioration of the film by absorbing ultraviolet rays to convert light energy into a harmless form such as heat. As the ultraviolet absorber, conventionally known ones can be used, for example, benzotriazole-based absorbers, triazine-based absorbers, salicylic acid derivative-based absorbers, benzophenone-based absorbers, and the like can be used.

凹凸构造层142的厚度较佳为100nm~10μm。若凹凸构造层142的厚度变得未达100nm,则下述的利用压印的凹凸形状的转印变困难。若凹凸构造层142的厚度超过10μm,则变得容易产生龟裂等构造上的缺陷。再者,此处,所谓凹凸构造层142的厚度,意指自凹凸构造层142的底面直至形成有凹凸图案80的表面的距离的平均值。The thickness of the concavo-convex structure layer 142 is preferably 100 nm˜10 μm. If the thickness of the concavo-convex structure layer 142 is less than 100 nm, it becomes difficult to transfer the concavo-convex shape by imprinting described below. When the thickness of the concavo-convex structure layer 142 exceeds 10 μm, structural defects such as cracks are likely to occur. Here, the thickness of the concave-convex structure layer 142 means the average value of the distance from the bottom surface of the concave-convex structure layer 142 to the surface on which the concave-convex pattern 80 is formed.

于基材40与凹凸构造层142之间的密接力较弱的情形时,亦可于基材40与凹凸构造层142之间设置接着层。接着层可为硅烷偶合剂等,作为硅烷偶合剂,可使用具有丙烯酰基或甲基丙烯酰基者,例如,可使用KBM-5103(信越化学制造)、KBM-503(信越化学制造)等。When the adhesion between the base material 40 and the uneven structure layer 142 is weak, an adhesive layer may be provided between the base material 40 and the uneven structure layer 142 . The following layer may be a silane coupling agent or the like. As the silane coupling agent, one having an acryloyl group or a methacryloyl group can be used, for example, KBM-5103 (manufactured by Shin-Etsu Chemical Co., Ltd.), KBM-503 (manufactured by Shin-Etsu Chemical Co., Ltd.) and the like can be used.

<第1电极><1st electrode>

第1电极92可为了使源自形成于其上的有机层94的光透至基材40侧而制成具有穿透性的透明电极。又,第1电极92较理想为以将形成于凹凸构造层142的表面的凹凸图案80维持在第1电极92的表面上的方式进行积层。The first electrode 92 may be a transmissive transparent electrode for transmitting light from the organic layer 94 formed thereon to the substrate 40 side. Furthermore, the first electrode 92 is preferably laminated so that the uneven pattern 80 formed on the surface of the uneven structure layer 142 is maintained on the surface of the first electrode 92 .

作为第1电极92的材料,例如可使用氧化铟、氧化锌、氧化锡、及作为该等的复合体的氧化铟锡(ITO)、金、铂、银、铜。该等中,就透明性与导电性的观点而言,较佳为ITO。第1电极92的厚度较佳为20~500nm的范围。又,亦可使用实质上未断开的连续的导电性的奈米线无规网络(网眼)化而成的构造体等作为第1电极92。除此以外,亦可使用可应用于透明型发光元件的任意电极材料。As a material of the first electrode 92, for example, indium oxide, zinc oxide, tin oxide, and indium tin oxide (ITO), gold, platinum, silver, and copper that are composites thereof can be used. Among these, ITO is preferable from the viewpoint of transparency and conductivity. The thickness of the first electrode 92 is preferably in the range of 20 to 500 nm. In addition, a structure in which substantially uninterrupted continuous conductive nanowires are randomly networked (meshed) or the like may be used as the first electrode 92 . In addition, any electrode material applicable to a transparent light-emitting element can also be used.

<有机层><Organic layer>

有机层94形成于第1电极92上。有机层94的表面亦可维持形成于凹凸构造层142的表面的凹凸图案80。或者,有机层94的表面亦可不维持形成于凹凸构造层142的表面的凹凸图案80而平坦。于有机层94的表面维持有形成于凹凸构造层142的表面的凹凸图案80的情形时,由下述的第2电极98引起的电浆子吸收减少,而光提取效率提高。The organic layer 94 is formed on the first electrode 92 . The surface of the organic layer 94 can also maintain the concave-convex pattern 80 formed on the surface of the concave-convex structure layer 142 . Alternatively, the surface of the organic layer 94 may be flat without maintaining the concave-convex pattern 80 formed on the surface of the concave-convex structure layer 142 . When the surface of the organic layer 94 maintains the concave-convex pattern 80 formed on the surface of the concave-convex structure layer 142 , plasmon absorption by the second electrode 98 described below is reduced, and the light extraction efficiency is improved.

有机层94只要为可用于有机EL元件的有机层者,则无特别限制,可适当应用公知的有机层。有机层94亦可为各种有机薄膜的积层体,例如亦可为由电洞传输层、发光层、及电子传输层所构成的积层体。此处,作为电洞传输层的材料,可列举:酞青衍生物、萘酚菁衍生物、卟啉衍生物、N,N'-双(3-甲基苯基)-(1,1'-联苯基)-4,4'-二胺(TPD)或4,4'-双[N-(萘基)-N-苯基-胺基]联苯(α-NPD)等芳香族二胺化合物、噁唑、噁二唑、三唑、咪唑、咪唑酮、茋衍生物、吡唑啉衍生物、四氢咪唑、多芳基烷烃、丁二烯、4,4',4”-三(N-(3-甲基苯基)N-苯基胺基)三苯胺(m-MTDATA),但并不限定于该等。发光层为了使自第1电极92注入的电洞与自第2电极98注入的电子再结合进行发光而设置。作为可用于发光层的材料,可使用蒽、萘、芘、稠四苯、蔻、苝、酞苝、萘苝、二苯基丁二烯、四苯基丁二烯、香豆素、噁二唑、双苯并噁唑啉、双苯乙烯基、环戊二烯、铝羟喹啉错合物(Alq3)等有机金属错合物、三-(对联三苯-4-基)胺、1-芳基-2,5-二(2-噻吩基)吡咯衍生物、吡喃、喹吖啶酮、红萤烯、二苯乙烯苯衍生物、二苯乙烯基芳烃衍生物、二苯乙烯胺衍生物及各种萤光色素等。又,亦较佳为将选自该等化合物中的发光材料适当混合而使用。又,亦可较佳地使用显现源自自旋多重态的发光的材料系、例如产生磷光发光的磷光发光材料、及于分子内的一部分具有由该等所构成的部位的化合物。再者,上述磷光发光材料较佳为包含铱等重金属。亦可向载子移动率较高的主体材料中掺杂上述的发光材料作为客体材料,利用偶极-偶极相互作用(Forster机制)、电子交换相互作用(Dexter机制)而进行发光。又,作为电子传输层的材料,可列举:硝基取代茀衍生物、二苯基苯醌衍生物、噻喃二氧化物衍生物、萘苝等杂环四羧酸酐、碳二酰亚胺、亚茀基甲烷衍生物、蒽醌二甲烷及蒽酮衍生物、噁二唑衍生物、铝羟喹啉错合物(Alq3)等有机金属错合物等。进而亦可使用于上述噁二唑衍生物中,噁二唑环的氧原子被取代为硫原子的噻二唑衍生物、具有作为拉电子基周知的喹噁啉环的喹噁啉衍生物作为电子输送材料。进而亦可使用将该等材料导入至高分子链中、或以该等材料为高分子的主链的高分子材料。再者,电洞传输层或电子传输层亦可兼具发光层的作用。The organic layer 94 is not particularly limited as long as it is an organic layer that can be used in an organic EL element, and known organic layers can be appropriately used. The organic layer 94 may be a laminate of various organic thin films, for example, a laminate composed of a hole transport layer, a light emitting layer, and an electron transport layer. Here, examples of materials for the hole transport layer include phthalocyanine derivatives, naphtholcyanine derivatives, porphyrin derivatives, N,N'-bis(3-methylphenyl)-(1,1' -biphenyl)-4,4'-diamine (TPD) or 4,4'-bis[N-(naphthyl)-N-phenyl-amino]biphenyl (α-NPD) and other aromatic diphenyl Amine compounds, oxazole, oxadiazole, triazole, imidazole, imidazolone, stilbene derivatives, pyrazoline derivatives, tetrahydroimidazole, polyaryl alkanes, butadiene, 4,4',4"-tri (N-(3-methylphenyl)N-phenylamino)triphenylamine (m-MTDATA), but not limited thereto. In order for the light-emitting layer to make holes injected from the first electrode 92 and holes injected from the first electrode 92 2 Electrons injected into the electrode 98 are recombined to emit light. As materials that can be used for the light-emitting layer, anthracene, naphthalene, pyrene, pyrene, corone, perylene, phthaloperylene, naphthalene, diphenylbutadiene, Tetraphenylbutadiene, coumarin, oxadiazole, bisbenzoxazoline, bistyryl, cyclopentadiene, aluminum hydroxyquinoline complex (Alq3) and other organometallic complexes, three -(p-triphenyl-4-yl)amine, 1-aryl-2,5-bis(2-thienyl)pyrrole derivatives, pyran, quinacridone, rubrene, stilbene derivatives , distyrylarene derivatives, distyrylamine derivatives and various fluorescent pigments, etc. Also, it is also preferable to use a suitable mixture of light-emitting materials selected from these compounds. Also, it is also preferable A material system that exhibits luminescence derived from a spin multiple state, such as a phosphorescent luminescent material that produces phosphorescent luminescence, and a compound having a site composed of these in a part of the molecule. Furthermore, the above-mentioned phosphorescent luminescent material is preferably In order to contain heavy metals such as iridium, the above-mentioned luminescent material can also be doped into the host material with high carrier mobility as a guest material, and the dipole-dipole interaction (Forster mechanism) and electron exchange interaction (Dexter mechanism) can be used. and emit light. Again, as the material of the electron transport layer, can enumerate: heterocyclic tetracarboxylic anhydrides such as nitro-substituted stilbene derivatives, diphenylbenzoquinone derivatives, thiopyran dioxide derivatives, naphthalene perylene, carbon di Imides, fenylene methane derivatives, anthraquinone dimethane and anthrone derivatives, oxadiazole derivatives, aluminum oxyquinoline complexes (Alq3) and other organometallic complexes, etc. It can also be used in Among the above-mentioned oxadiazole derivatives, thiadiazole derivatives in which the oxygen atom of the oxadiazole ring is replaced by a sulfur atom, and quinoxaline derivatives having a quinoxaline ring known as an electron-withdrawing group are used as electron transport materials. It is also possible to use polymer materials that incorporate these materials into polymer chains, or use these materials as the main chain of polymers. Furthermore, the hole transport layer or electron transport layer can also function as a light emitting layer.

进而,就使自第2电极98的电子注入变容易的观点而言,亦可于有机层94与第2电极98之间设置由氟化锂(LiF)、Li2O3等金属氟化物或金属氧化物、Ca、Ba、Cs等活性较高的碱土金属、有机绝缘材料等所构成的层作为电子注入层。又,就使自第1电极92的电洞注入变容易的观点而言,亦可于有机层94与第1电极92之间设置由三唑衍生物、噁二唑衍生物、咪唑衍生物、多芳基烷烃衍生物、吡唑啉衍生物及吡唑酮衍生物、苯二胺衍生物、芳基胺衍生物、胺基取代查尔酮衍生物、噁唑衍生物、苯乙烯基蒽衍生物、茀酮衍生物、腙衍生物、茋衍生物、硅氮烷衍生物、苯胺系共聚物、或导电性高分子低聚物、尤其是噻吩低聚物等所构成的层作为电洞注入层。Furthermore, from the viewpoint of facilitating electron injection from the second electrode 98, a metal fluoride such as lithium fluoride (LiF) or Li 2 O 3 may be provided between the organic layer 94 and the second electrode 98 or A layer composed of metal oxides, Ca, Ba, Cs and other highly active alkaline earth metals, organic insulating materials, etc. is used as the electron injection layer. Also, from the viewpoint of facilitating hole injection from the first electrode 92, a triazole derivative, an oxadiazole derivative, an imidazole derivative, Polyaryl alkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styryl anthracene derivatives Thinone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, aniline copolymers, or conductive polymer oligomers, especially thiophene oligomers, etc. as hole injection Floor.

又,于有机层94为由电洞传输层、发光层、及电子传输层所构成的积层体的情形时,电洞传输层、发光层、及电子传输层的厚度较佳为分别为1~200nm的范围、5~100nm的范围、及5~200nm的范围。Also, when the organic layer 94 is a laminated body composed of a hole transport layer, a light-emitting layer, and an electron transport layer, the thicknesses of the hole transport layer, the light-emitting layer, and the electron transport layer are preferably 1 The range of ˜200 nm, the range of 5-100 nm, and the range of 5-200 nm.

<第2电极><Second electrode>

第2电极98形成于有机层94上。可适当使用功函数较小的物质作为第2电极98,并无特别限定,例如可设为LiF、Al、Ag、MgAg、MgIn、AlLi等金属电极或将该等积层而成的电极。又,第2电极98的厚度较佳为5~25nm的范围。若第2电极98的厚度未达上述下限,则有第2电极98的电阻变高的倾向。若第2电极98的厚度超过上述上限的情形时,有由于第2电极98的穿透率较低,故而损害发光元件100的透明性的倾向。又,第2电极98的表面亦可维持形成于凹凸构造层142的表面的凹凸图案80。The second electrode 98 is formed on the organic layer 94 . A material having a relatively small work function can be appropriately used as the second electrode 98 without particular limitation. For example, it can be a metal electrode such as LiF, Al, Ag, MgAg, MgIn, AlLi or an electrode obtained by laminating them. In addition, the thickness of the second electrode 98 is preferably in the range of 5 to 25 nm. If the thickness of the second electrode 98 is less than the aforementioned lower limit, the resistance of the second electrode 98 tends to increase. When the thickness of the second electrode 98 exceeds the upper limit, the transparency of the light emitting element 100 tends to be impaired due to the low transmittance of the second electrode 98 . In addition, the surface of the second electrode 98 may maintain the concave-convex pattern 80 formed on the surface of the concave-convex structure layer 142 .

<密封构件><Sealing member>

密封构件101与基材40对向而设置,于该密封构件101与基材40之间形成空间(密封空间)105。第1电极92、有机层94、及第2电极98位于该密封空间105内。密封构件101可藉由密封接着剂层103而以与基材40对向的方式进行固定。密封接着剂层103于图1(a)的Z方向(基材40的法线方向)上位于基材40与密封构件101之间,于XY方向(基材40的面内方向)上,亦可以包围有机层94的方式进行设置。藉由密封构件101及密封接着剂层103而防止水分或氧气渗入至密封空间105内。藉此,抑制有机层94等的劣化,提高发光元件100的寿命。又,为了有效地提取自有机层94发出的光,较佳为密封接着剂层103不与有机层94接触,而是以与有机层94隔着特定间隔的方式形成密封接着剂层103。上述特定间隔例如较佳为1μm以上。The sealing member 101 is provided facing the base material 40 , and a space (sealed space) 105 is formed between the sealing member 101 and the base material 40 . The first electrode 92 , the organic layer 94 , and the second electrode 98 are located in the sealed space 105 . The sealing member 101 can be fixed so as to face the base material 40 by the sealing adhesive layer 103 . The sealing adhesive layer 103 is located between the base material 40 and the sealing member 101 in the Z direction (the normal direction of the base material 40) of FIG. It may be provided so as to surround the organic layer 94 . Water or oxygen is prevented from penetrating into the sealed space 105 by the sealing member 101 and the sealing adhesive layer 103 . Thereby, deterioration of the organic layer 94 etc. is suppressed, and the lifetime of the light emitting element 100 is improved. In addition, in order to efficiently extract light emitted from the organic layer 94 , it is preferable that the sealing adhesive layer 103 is not in contact with the organic layer 94 and that the sealing adhesive layer 103 is formed with a predetermined distance from the organic layer 94 . The above-mentioned specific interval is preferably, for example, 1 μm or more.

密封构件101的材料只要为阻气性较高的材料即可,例如可使用包装材料等所使用的公知的阻气性膜、例如蒸镀有氧化硅或氧化铝的塑胶膜、陶瓷层与冲击缓和聚合物层的积层物、层压有聚合物膜的金属箔、玻璃制或金属制的密封罐、刻蚀玻璃等。The material of the sealing member 101 may be a material with high gas barrier properties. For example, a known gas barrier film used in packaging materials, such as a plastic film deposited with silicon oxide or aluminum oxide, a ceramic layer, and an impact film can be used. Relaxed polymer layer laminates, metal foils laminated with polymer films, glass or metal airtight cans, etched glass, etc.

作为密封接着剂层103的材料,可无限制地使用通常对玻璃、又塑胶基板等所使用的任意的接着剂,例如可列举:聚乙酸乙烯酯系接着剂、丙烯酸系低聚物、甲基丙烯酸系低聚物等具有反应性乙烯基的光硬化及热硬化型的丙烯酸系接着剂、环氧树脂接着剂、2-氰基丙烯酸酯等湿气硬化型等的接着剂、乙烯系共聚物系接着剂、聚酯系接着剂、聚酰亚胺系接着剂、由脲树脂或三聚氰胺树脂等所构成的胺基树脂系接着剂、酚树脂系接着剂、聚胺酯系接着剂、反应型(甲基)丙烯酸系接着剂、橡胶系接着剂等。As the material of the sealing adhesive layer 103, any adhesive that is usually used for glass, plastic substrates, etc. can be used without limitation, for example, polyvinyl acetate adhesives, acrylic oligomers, methyl Light-curing and thermosetting acrylic adhesives with reactive vinyl groups such as acrylic oligomers, epoxy resin adhesives, moisture-curing adhesives such as 2-cyanoacrylate, etc., vinyl copolymers adhesives, polyester adhesives, polyimide adhesives, amino resin adhesives made of urea resin or melamine resin, phenol resin adhesives, polyurethane adhesives, reactive (methanol) base) acrylic adhesives, rubber adhesives, etc.

密封空间105亦可由非活性气体等填满。作为非活性气体,除氮气(N2)外,可较佳地使用氦气(He)、氩气(Ar)等稀有气体,亦较佳为混合氦气与氩气而成的稀有气体,非活性气体占气体中的比率较佳为90~100体积%。又,密封空间105亦可填充有固体状或液体状的树脂、玻璃、氟系等非活性油或凝胶材等填充剂。该等填充剂较理想为透明或白浊。进而,亦可于密封空间105内配置吸水性的物质。例如可使用氧化钡等作为吸水性的物质。具体而言,例如可藉由使用附黏着剂的氟树脂系半穿透膜(Microtex S-NTF8031Q日东电工制造)等,将Aldrich公司制造的高纯度氧化钡粉末贴附于密封构件101而配置于密封空间105内。除此以外,亦可较佳地使用由Japan Gore-Tex(股份有限公司)、双叶电子(股份有限公司)等所市售的吸水性物质。The sealed space 105 may also be filled with an inert gas or the like. As an inert gas, in addition to nitrogen (N 2 ), rare gases such as helium (He) and argon (Ar) can be preferably used, and rare gases mixed with helium and argon are also preferred. The ratio of the active gas to the gas is preferably 90-100% by volume. In addition, the sealed space 105 may be filled with fillers such as solid or liquid resin, glass, fluorine-based inert oil, or gel material. These fillers are preferably transparent or cloudy. Furthermore, a water-absorbing substance may also be disposed in the sealed space 105 . For example, barium oxide or the like can be used as the water-absorbing substance. Specifically, for example, a high-purity barium oxide powder manufactured by Aldrich can be attached to the sealing member 101 by using a fluororesin-based semi-permeable membrane (Microtex S-NTF8031Q manufactured by Nitto Denko) with an adhesive agent. in the sealed space 105. In addition, a water-absorbent material commercially available from Japan Gore-Tex Co., Ltd., Futaba Electronics Co., Ltd., etc. can also be preferably used.

本实施形态的发光元件100包括作为绕射光栅发挥作用的凹凸构造层142,因此光提取效率较高,所以发光效率较高。进而,凹凸构造层142的凹凸图案80由于凹凸的平均间距为150~650nm的范围内,故而由凹凸构造层142及基材40所构成的绕射光栅基板140的雾度值为2.0%以下。发光元件100由于使用此种雾度值较小的绕射光栅基板140,故而透明性较高而透明。即,本实施形态的发光元件100是透明型发光元件并且发光效率较高。The light-emitting element 100 of this embodiment includes the concavo-convex structure layer 142 functioning as a diffraction grating, so the light extraction efficiency is high, so the luminous efficiency is high. Furthermore, since the uneven pattern 80 of the uneven structure layer 142 has an average pitch of the unevenness in the range of 150 to 650 nm, the haze value of the diffraction grating substrate 140 composed of the uneven structure layer 142 and the substrate 40 is 2.0% or less. Since the light-emitting element 100 uses the diffraction grating substrate 140 with such a small haze value, it has high transparency and is transparent. That is, the light emitting element 100 of this embodiment is a transparent light emitting element and has high luminous efficiency.

再者,如图1(b)所示的发光元件100a般,亦可于基材40的与形成有第1膜60等的侧的面相反侧的面(发光元件的成为光提取面的面)设置光学功能层142a。光学功能层142a可为于表面形成有微细的凹凸图案80a的层。于该情形时,与上述的凹凸构造层142的凹凸图案80同样地,光学功能层142a的凹凸图案80a可为具有绕射光的功能的构造,凹凸的平均间距较佳为150~650nm的范围内。除此以外,可无特别限制地使用能够用以提取发光元件的光,且无损发光元件100a的穿透性者作为光学功能层142a,可使用具有能够控制光的折射或聚光、绕射、反射等而将光提取至元件的外侧的构造的任意光学构件。作为此种构件,例如亦可使用如半球透镜的凸透镜、凹透镜、菲涅耳透镜、棱透镜、圆柱状透镜、扁豆状透镜、由微细的凹凸层所构成的微透镜等各种透镜构件、绕射光栅、具有抗反射功能的构件等。该等中,就可更高效率地提取光的方面而言,较佳为透镜构件。又,作为此种透镜构件,亦可使用多个透镜构件,于该情形时,亦可使微细的透镜构件排列而形成所谓微透镜(阵列)。亦可使用市售品作为光学功能层142a。藉由设置此种光学功能层142a,可抑制通过基材40内的光于基材40(包含光学功能层)与空气的界面进行全反射而提高光提取效率。Furthermore, like the light-emitting element 100a shown in FIG. ) to set the optical function layer 142a. The optical function layer 142a may be a layer having a fine concave-convex pattern 80a formed on the surface. In this case, similar to the concave-convex pattern 80 of the above-mentioned concave-convex structure layer 142, the concave-convex pattern 80a of the optical function layer 142a may have a structure having the function of diffracting light, and the average pitch of the concave-convex is preferably in the range of 150 to 650 nm. . In addition, the optical functional layer 142a that can be used to extract the light of the light-emitting element without damaging the penetrability of the light-emitting element 100a can be used without any particular limitation. Any optical member with a structure that extracts light to the outside of the element by reflection or the like. As such members, for example, various lens members such as convex lenses, concave lenses, Fresnel lenses, prism lenses, cylindrical lenses, lenticular lenses, microlenses composed of fine concavo-convex layers, etc. Radiation gratings, components with anti-reflection functions, etc. Among these, a lens member is preferable at the point that light can be extracted more efficiently. Moreover, a plurality of lens members may be used as such a lens member, and in this case, a so-called microlens (array) may be formed by arranging fine lens members. A commercially available item can also be used as the optical function layer 142a. By disposing the optical function layer 142a, the total reflection of the light passing through the substrate 40 at the interface between the substrate 40 (including the optical function layer) and the air can be suppressed, thereby improving the light extraction efficiency.

第1电极92、有机层94及第2电极98的构成并不限定于上述构成,可为可用于透明型发光元件的任意构成。又,亦可利用密封剂覆盖第1电极92、有机层94及第2电极98而对该等进行密封以代替如上述般,藉由密封构件101及密封接着剂103形成密封空间105而对第1电极92、有机层94及第2电极98进行密封。又,只要为无损发光元件100、100a的穿透性的密封方法,则可无特别限制地使用。The configuration of the first electrode 92, the organic layer 94, and the second electrode 98 is not limited to the configuration described above, and may be any configuration that can be used for a transparent light-emitting element. Also, the first electrode 92, the organic layer 94, and the second electrode 98 may be sealed by covering them with a sealant instead of sealing the first electrode 92, the organic layer 94, and the second electrode 98 by forming the sealed space 105 with the sealing member 101 and the sealing adhesive 103 as described above. The first electrode 92, the organic layer 94, and the second electrode 98 are sealed. Also, any sealing method can be used without any particular limitation as long as it is a sealing method that does not impair the penetrating properties of the light emitting elements 100 and 100a.

[发光元件的制造方法][Manufacturing method of light-emitting element]

继而针对上述发光元件100、100a的制造方法,一面参照图1(a)、(b)一面进行说明。图1(a)所示的发光元件100的制造方法大致包含如下步骤:于基材40上形成凹凸构造层142的步骤;形成第1电极92的步骤;形成有机层94的步骤;形成第2电极98的步骤;及密封有机层94的步骤。图1(b)所示的发光元件100a的制造方法除发光元件100的制造方法的各步骤外,进而包含于基材40配置光学功能层142a的步骤。以下,对各步骤依序进行说明。再者,于以下的说明中,列举藉由溶胶凝胶法形成凹凸构造层142的情形为例进行说明。Next, a method of manufacturing the light-emitting elements 100 and 100a described above will be described with reference to FIGS. 1( a ) and ( b ). The manufacturing method of the light-emitting element 100 shown in Fig. 1 (a) roughly comprises the following steps: the step of forming the concavo-convex structure layer 142 on the substrate 40; the step of forming the first electrode 92; the step of forming the organic layer 94; the step of electrode 98; and the step of sealing organic layer 94. The manufacturing method of the light-emitting element 100a shown in FIG. 1( b ) further includes the step of disposing the optical function layer 142a on the substrate 40 in addition to each step of the manufacturing method of the light-emitting element 100 . Hereinafter, each step will be described in order. Furthermore, in the following description, the case where the concavo-convex structure layer 142 is formed by a sol-gel method is taken as an example for description.

<凹凸构造层的形成><Formation of concavo-convex structure layer>

首先,于基材40上形成凹凸构造层142。凹凸构造层142例如可藉由如以下所说明的方法而形成。First, the concave-convex structure layer 142 is formed on the substrate 40 . The concavo-convex structure layer 142 can be formed, for example, by a method as described below.

于形成由无机材料所构成的凹凸构造层142的情形时,制备无机材料的前驱物的溶液。于使用溶胶凝胶法而形成由无机材料所构成的凹凸构造层142的情形时,制备金属烷氧化物作为前驱物。例如于形成由二氧化硅所构成的凹凸构造层142的情形时,作为二氧化硅的前驱物,可使用四甲氧基硅烷(TMOS)、四乙氧基硅烷(TEOS)、四异丙氧基硅烷、四正丙氧基硅烷、四异丁氧基硅烷、四正丁氧基硅烷、四第二丁氧基硅烷、四第三丁氧基硅烷等四烷氧基硅烷所代表的四烷氧化物单体、或甲基三甲氧基硅烷、乙基三甲氧基硅烷、丙基三甲氧基硅烷、异丙基三甲氧基硅烷、苯基三甲氧基硅烷、甲基三乙氧基硅烷(MTES)、乙基三乙氧基硅烷、丙基三乙氧基硅烷、异丙基三乙氧基硅烷、苯基三乙氧基硅烷、甲基三丙氧基硅烷、乙基三丙氧基硅烷、丙基三丙氧基硅烷、异丙基三丙氧基硅烷、苯基三丙氧基硅烷、甲基三异丙氧基硅烷、乙基三异丙氧基硅烷、丙基三异丙氧基硅烷、异丙基三异丙氧基硅烷、苯基三异丙氧基硅烷、甲苯基三乙氧基硅烷等以三烷氧基硅烷为代表的三烷氧化物单体;二甲基二甲氧基硅烷、二甲基二乙氧基硅烷、二甲基二丙氧基硅烷、二甲基二异丙氧基硅烷、二甲基二-正丁氧基硅烷、二甲基二-异丁氧基硅烷、二甲基二-第二丁氧基硅烷、二甲基二-第三丁氧基硅烷、二乙基二甲氧基硅烷、二乙基二乙氧基硅烷、二乙基二丙氧基硅烷、二乙基二异丙氧基硅烷、二乙基二-正丁氧基硅烷、二乙基二-异丁氧基硅烷、二乙基二-第二丁氧基硅烷、二乙基二-第三丁氧基硅烷、二丙基二甲氧基硅烷、二丙基二乙氧基硅烷、二丙基二丙氧基硅烷、二丙基二异丙氧基硅烷、二丙基二-正丁氧基硅烷、二丙基二-异丁氧基硅烷、二丙基二-第二丁氧基硅烷、二丙基二-第三丁氧基硅烷、二异丙基二甲氧基硅烷、二异丙基二乙氧基硅烷、二异丙基二丙氧基硅烷、二异丙基二异丙氧基硅烷、二异丙基二-正丁氧基硅烷、二异丙基二-异丁氧基硅烷、二异丙基二-第二丁氧基硅烷、二异丙基二-第三丁氧基硅烷、二苯基二甲氧基硅烷、二苯基二乙氧基硅烷、二苯基二丙氧基硅烷、二苯基二异丙氧基硅烷、二苯基二-正丁氧基硅烷、二苯基二-异丁氧基硅烷、二苯基二-第二丁氧基硅烷、二苯基二-第三丁氧基硅烷等以二烷氧基硅烷为代表的二烷氧化物单体。进而,亦可使用烷基的碳数为C4~C18的烷基三烷氧基硅烷或二烷基二烷氧基硅烷。亦可使用乙烯基三甲氧基硅烷、乙烯基三乙氧基硅烷等具有乙烯基的单体;2-(3,4-环氧基环己基)乙基三甲氧基硅烷、3-缩水甘油氧基丙基甲基二甲氧基硅烷、3-缩水甘油氧基丙基三甲氧基硅烷、3-缩水甘油氧基丙基甲基二乙氧基硅烷、3-缩水甘油氧基丙基三乙氧基硅烷等具有环氧基的单体;对苯乙烯基三甲氧基硅烷等具有苯乙烯基的单体;3-甲基丙烯酰氧基丙基甲基二甲氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷、3-甲基丙烯酰氧基丙基甲基二乙氧基硅烷、3-甲基丙烯酰氧基丙基三乙氧基硅烷等具有甲基丙烯酰基的单体;3-丙烯酰氧基丙基三甲氧基硅烷等具有丙烯酰基的单体;N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基硅烷、N-2-(胺基乙基)-3-胺基丙基三甲氧基硅烷、3-胺基丙基三甲氧基硅烷、3-胺基丙基三乙氧基硅烷、3-三乙氧基硅烷基-N-(1,3-二甲基-亚丁基)丙基胺、N-苯基-3-胺基丙基三甲氧基硅烷等具有胺基的单体;3-脲基丙基三乙氧基硅烷等具有脲基的单体;3-巯基丙基甲基二甲氧基硅烷、3-巯基丙基三甲氧基硅烷等具有巯基的单体;双(三乙氧基硅烷基丙基)四硫化物等具有硫基的单体;3-异氰酸酯基丙基三乙氧基硅烷等具有异氰酸酯基的单体;使该等单体少量聚合而成的聚合物;特征在于向上述材料的一部分导入有官能基或聚合物的复合材料等金属烷氧化物。又,亦可该等化合物的烷基或苯基的一部分、或者全部被氟取代。进而,可列举:金属乙酰丙酮酸盐、金属羧酸盐、氯氧化物、氯化物、或该等的混合物等,但并不限定于该等。作为金属种类,除Si以外,可列举:Ti、Sn、Al、Zn、Zr、In等、或该等的混合物等,但并不限定于该等。亦可使用适当混合上述氧化金属的前驱物而成者。进而,作为二氧化硅的前驱物,可使用于分子中具有与二氧化硅的亲和性、反应性的水解基及具有拨水性的有机官能基的硅烷偶合剂。例如可列举:正辛基三乙氧基硅烷、甲基三乙氧基硅烷、甲基三甲氧基硅烷等硅烷单体;乙烯基三乙氧基硅烷、乙烯基三甲氧基硅烷、乙烯基三(2-甲氧基乙氧基)硅烷、乙烯基甲基二甲氧基硅烷等乙烯基硅烷;3-甲基丙烯酰氧基丙基三乙氧基硅烷、3-甲基丙烯酰氧基丙基三甲氧基硅烷等甲基丙烯酰基硅烷;2-(3,4-环氧基环己基)乙基三甲氧基硅烷、3-缩水甘油氧基丙基三甲氧基硅烷、3-缩水甘油氧基丙基三乙氧基硅烷等环氧硅烷;3-巯基丙基三甲氧基硅烷、3-巯基丙基三乙氧基硅烷等巯基硅烷、3-辛酰基硫-1-丙基三乙氧基硅烷等硫硅烷;3-胺基丙基三乙氧基硅烷、3-胺基丙基三甲氧基硅烷、N-(2-胺基乙基)-3-胺基丙基三甲氧基硅烷、N-(2-胺基乙基)-3-胺基丙基甲基二甲氧基硅烷、3-(N-苯基)胺基丙基三甲氧基硅烷等胺基硅烷;使该等单体聚合而成的聚合物等。又,亦可藉由于该等材料中添加界面活性剂而形成经中孔化的凹凸构造层。In the case of forming the concave-convex structure layer 142 made of an inorganic material, a solution of a precursor of the inorganic material is prepared. When the sol-gel method is used to form the concave-convex structure layer 142 made of an inorganic material, a metal alkoxide is prepared as a precursor. For example, when forming the concavo-convex structure layer 142 made of silicon dioxide, as the precursor of silicon dioxide, tetramethoxysilane (TMOS), tetraethoxysilane (TEOS), tetraisopropoxy Tetraalkane represented by tetraalkoxysilane such as tetra-n-propoxysilane, tetra-n-propoxysilane, tetra-isobutoxysilane, tetra-n-butoxysilane, tetra-second butoxysilane, tetra-tert-butoxysilane, etc. Oxide monomer, or methyltrimethoxysilane, ethyltrimethoxysilane, propyltrimethoxysilane, isopropyltrimethoxysilane, phenyltrimethoxysilane, methyltriethoxysilane ( MTES), Ethyltriethoxysilane, Propyltriethoxysilane, Isopropyltriethoxysilane, Phenyltriethoxysilane, Methyltriethoxysilane, Ethyltripropoxysilane Silane, Propyltripropoxysilane, Isopropyltripropoxysilane, Phenyltripropoxysilane, Methyltriisopropoxysilane, Ethyltriisopropoxysilane, Propyltriisopropyl Trialkoxysilane, isopropyltriisopropoxysilane, phenyltriisopropoxysilane, tolyltriethoxysilane and other trialkoxysilane monomers represented by trialkoxysilane; dimethyl Dimethoxysilane, dimethyldiethoxysilane, dimethyldipropoxysilane, dimethyldiisopropoxysilane, dimethyldi-n-butoxysilane, dimethyldi- Isobutoxysilane, Dimethyldi-Second-Butoxysilane, Dimethyldi-Tertibutoxysilane, Diethyldimethoxysilane, Diethyldiethoxysilane, Diethyl dipropoxysilane, diethyldiisopropoxysilane, diethyldi-n-butoxysilane, diethyldi-isobutoxysilane, diethyldi-second-butoxysilane , Diethyldi-tertiary butoxysilane, dipropyldimethoxysilane, dipropyldiethoxysilane, dipropyldipropoxysilane, dipropyldiisopropoxysilane, Dipropyl bis-n-butoxysilane, dipropyl bis-isobutoxysilane, dipropyl bis-second butoxysilane, dipropyl bis-tertiary butoxysilane, diisopropyl Dimethoxysilane, diisopropyldiethoxysilane, diisopropyldipropoxysilane, diisopropyldiisopropoxysilane, diisopropyldi-n-butoxysilane, Isopropyl bis-isobutoxysilane, diisopropyl bis-second butoxysilane, diisopropyl bis-tertiary butoxysilane, diphenyl dimethoxysilane, diphenyl bis Ethoxysilane, diphenyldipropoxysilane, diphenyldiisopropoxysilane, diphenylbis-n-butoxysilane, diphenylbis-isobutoxysilane, diphenylbis - Dialkoxysilane monomers such as 2-butoxysilane, diphenylbis-3-butoxysilane and other dialkoxysilanes. Furthermore, an alkyltrialkoxysilane or a dialkyldialkoxysilane whose carbon number of an alkyl group is C4-C18 can also be used. Vinyltrimethoxysilane, vinyltriethoxysilane and other vinyl monomers can also be used; 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidyloxy 3-Glycidoxypropylmethyldimethoxysilane, 3-Glycidoxypropyltrimethoxysilane, 3-Glycidoxypropylmethyldiethoxysilane, 3-Glycidoxypropyltriethyl Monomers with epoxy groups such as oxysilane; monomers with styryl groups such as p-styryltrimethoxysilane; 3-methacryloxypropylmethyldimethoxysilane, 3-methyl Acryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, etc. have methacrylic Acrylic monomers; 3-acryloyloxypropyltrimethoxysilane and other acryloyl monomers; N-2-(aminoethyl)-3-aminopropylmethyldimethoxysilane, N-2-(aminoethyl)-3-aminopropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxy Monomers with amino groups such as silyl-N-(1,3-dimethyl-butylene)propylamine, N-phenyl-3-aminopropyltrimethoxysilane, etc.; 3-ureidopropyl 3-mercaptopropylmethyldimethoxysilane, 3-mercaptopropyltrimethoxysilane and other monomers with mercapto groups; bis(triethoxysilane 3-isocyanatopropyltriethoxysilane and other monomers with isocyanate groups; polymers obtained by polymerizing a small amount of these monomers; Metal alkoxides such as functional groups introduced into part of the above-mentioned materials or composite materials of polymers. Moreover, some or all of the alkyl groups or phenyl groups of these compounds may be substituted with fluorine. Furthermore, examples thereof include metal acetylacetonate, metal carboxylate, oxychloride, chloride, or a mixture thereof, but are not limited thereto. Examples of the metal species include Ti, Sn, Al, Zn, Zr, In, etc., or mixtures thereof other than Si, but are not limited thereto. It is also possible to use those obtained by appropriately mixing the precursors of the aforementioned metal oxides. Furthermore, as a precursor of silica, a silane coupling agent having an affinity with silica, a reactive hydrolyzing group, and a water-repellent organic functional group in the molecule can be used. Examples include: silane monomers such as n-octyltriethoxysilane, methyltriethoxysilane, and methyltrimethoxysilane; vinyltriethoxysilane, vinyltrimethoxysilane, vinyltrimethoxysilane, Vinyl silanes such as (2-methoxyethoxy)silane, vinylmethyldimethoxysilane; 3-methacryloxypropyltriethoxysilane, 3-methacryloxy Propyltrimethoxysilane and other methacryloylsilanes; 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-glycidyloxypropyltrimethoxysilane, 3-glycidol Oxypropyl triethoxysilane and other epoxy silanes; Sulfur silane such as oxysilane; 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxy Silane, N-(2-aminoethyl)-3-aminopropylmethyldimethoxysilane, 3-(N-phenyl)aminopropyltrimethoxysilane and other aminosilanes; make the Polymers such as monomers polymerized. In addition, a mesoporous concave-convex structure layer can also be formed by adding a surfactant to these materials.

于使用TEOS与MTES的混合物作为无机材料的前驱物的情形时,该等的混合比率如以莫耳比计可设为1:1。该前驱物藉由进行水解及缩聚反应而生成非晶质二氧化硅。为了调整作为合成条件的溶液的pH值,而添加盐酸等酸或氨等碱。pH值较佳为4以下或10以上。又,为了进行水解而亦可添加水。关于所添加的水的量,相对于金属烷氧化物种类,以莫耳比计可设为1.5倍以上。When using a mixture of TEOS and MTES as the precursor of the inorganic material, the mixing ratio can be set to 1:1 in terms of molar ratio. The precursor generates amorphous silicon dioxide through hydrolysis and polycondensation reactions. In order to adjust the pH of the solution as a synthesis condition, an acid such as hydrochloric acid or a base such as ammonia is added. The pH value is preferably 4 or less or 10 or more. Moreover, water may be added for hydrolysis. The amount of water to be added may be 1.5 times or more in molar ratio with respect to the metal alkoxide species.

作为溶胶凝胶法中所使用的前驱物溶液的溶剂,例如可列举:甲醇、乙醇、异丙基醇(IPA)、丁醇等醇类;己烷、庚烷、辛烷、癸烷、环己烷等脂肪族烃类;苯、甲苯、二甲苯、均三甲苯等芳香族烃类;二乙基醚、四氢呋喃、二噁烷等醚类;丙酮、甲基乙基酮、异佛尔酮、环己酮等酮类;丁氧基乙醚、己氧基乙基醇、甲氧基-2-丙醇、苄氧基乙醇等醚醇类;乙二醇、丙二醇等二醇类、乙二醇二甲醚、二乙二醇二甲醚、丙二醇单甲醚乙酸酯等二醇醚类;乙酸乙酯、乳酸乙酯、γ-丁内酯等酯类;苯酚、氯酚等酚类;N,N-二甲基甲酰胺、N,N-二甲基乙酰胺、N-甲基吡咯啶酮等酰胺类;氯仿、二氯甲烷、四氯乙烷、单氯苯、二氯苯等卤素系溶剂;二硫化碳等含杂原子化合物;水;及该等的混合溶剂。尤其是乙醇及异丙醇较佳,又,于该等中混合有水者亦较佳。As the solvent of the precursor solution used in the sol-gel method, for example, alcohols such as methanol, ethanol, isopropyl alcohol (IPA), butanol; hexane, heptane, octane, decane, cyclo Aliphatic hydrocarbons such as hexane; aromatic hydrocarbons such as benzene, toluene, xylene, and mesitylene; ethers such as diethyl ether, tetrahydrofuran, and dioxane; acetone, methyl ethyl ketone, and isophorone , cyclohexanone and other ketones; butoxyethyl ether, hexyloxyethyl alcohol, methoxy-2-propanol, benzyloxyethanol and other ether alcohols; ethylene glycol, propylene glycol and other glycols, ethylene glycol Glycol ethers such as alcohol dimethyl ether, diethylene glycol dimethyl ether, and propylene glycol monomethyl ether acetate; esters such as ethyl acetate, ethyl lactate, and γ-butyrolactone; phenols such as phenol and chlorophenol ; Amides such as N,N-dimethylformamide, N,N-dimethylacetamide, N-methylpyrrolidone; Chloroform, dichloromethane, tetrachloroethane, monochlorobenzene, dichlorobenzene Halogen-based solvents such as carbon disulfide; heteroatom-containing compounds such as carbon disulfide; water; and mixed solvents of these. In particular, ethanol and isopropanol are preferable, and those mixed with water are also preferable.

作为溶胶凝胶法中所使用的前驱物溶液的添加物,可使用用以调整黏度的聚乙二醇、聚环氧乙烷、羟丙基纤维素、聚乙烯醇、或作为溶液稳定剂的三乙醇胺等烷醇胺、乙酰丙酮等β-二酮、β-酮酯、甲酰胺、二甲基甲酰胺、二噁烷等。又,作为前驱物溶液的添加物,可使用藉由照射以准分子UV光等紫外线为代表的能量线等光而产生酸或碱的材料。藉由添加此种材料,而变得可藉由照射光而使前驱物溶液凝胶化(硬化)从而形成无机材料。As an additive to the precursor solution used in the sol-gel method, polyethylene glycol, polyethylene oxide, hydroxypropyl cellulose, polyvinyl alcohol for adjusting viscosity, or polyvinyl alcohol as a solution stabilizer can be used. Alkanolamines such as triethanolamine, β-diketones such as acetylacetone, β-ketoesters, formamide, dimethylformamide, dioxane, etc. Also, as an additive to the precursor solution, a material that generates an acid or a base by irradiating light such as energy rays typified by ultraviolet light such as excimer UV light can be used. By adding such a material, it becomes possible to gel (harden) the precursor solution by irradiating light to form an inorganic material.

又,亦可使用聚硅氮烷作为无机材料的前驱物。聚硅氮烷藉由加热或照射准分子等能量线而氧化从而进行陶瓷化(二氧化硅改质),而形成二氧化硅、SiN或SiON。再者,所谓“聚硅氮烷”,是具有硅-氮键的聚合物,且由Si-N、Si-H、N-H等所构成的SiO2、Si3N4及两者的中间固溶体SiOXNY等陶瓷前驱物无机聚合物。更佳为日本特开平8-112879号公报所记载的如下述通式(1)所表示的于相对低温下进行陶瓷化而改质为二氧化硅等的化合物。Moreover, polysilazane can also be used as a precursor of an inorganic material. Polysilazane is oxidized by heating or irradiating energy rays such as excimers to perform ceramization (silicon dioxide modification) to form silicon dioxide, SiN, or SiON. Furthermore, the so-called "polysilazane" is a polymer having a silicon-nitrogen bond, and is composed of SiO 2 , Si 3 N 4 and intermediates composed of Si-N, Si-H, N-H, etc. Solid solution SiO X NY and other ceramic precursor inorganic polymers. More preferably, it is a compound described in JP-A-8-112879 that is represented by the following general formula (1) and is modified into silica or the like by ceramization at a relatively low temperature.

通式(1):General formula (1):

-Si(R1)(R2)-N(R3)--Si(R1)(R2)-N(R3)-

式中,R1、R2、R3分别表示氢原子、烷基、烯基、环烷基、芳基、烷基硅烷基、烷基胺基或烷氧基。In the formula, R1, R2, and R3 respectively represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an alkylsilyl group, an alkylamino group or an alkoxy group.

于上述通式(1)所表示的化合物中,尤佳为R1、R2及R3全部为氢原子的全氢聚硅氮烷(亦称为PHPS)、或与Si键结的氢部分的一部分经烷基等取代的有机聚硅氮烷。Among the compounds represented by the above general formula (1), perhydropolysilazane (also referred to as PHPS) in which all of R1, R2, and R3 are hydrogen atoms, or a part of the hydrogen moiety bonded to Si is particularly preferred. An organopolysilazane substituted with an alkyl group or the like.

作为于低温下进行陶瓷化的聚硅氮烷的其他例,亦可使用使聚硅氮烷与烷醇硅进行反应而获得的烷醇硅加成聚硅氮烷(例如,日本特开平5-238827号公报)、使聚硅氮烷与去水甘油进行反应而获得的去水甘油加成聚硅氮烷(例如,日本特开平6-122852号公报)、使聚硅氮烷与醇进行反应而获得的醇加成聚硅氮烷(例如,日本特开平6-240208号公报)、使聚硅氮烷与金属羧酸盐进行反应而获得的金属羧酸盐加成聚硅氮烷(例如,日本特开平6-299118号公报)、使聚硅氮烷与包含金属的乙酰丙酮酸盐错合物进行反应而获得的乙酰丙酮酸盐错合物加成聚硅氮烷(例如,日本特开平6-306329号公报)、向聚硅氮烷添加金属微粒子而获得的金属微粒子添加聚硅氮烷(例如,日本特开平7-196986号公报)等。As other examples of polysilazanes that are ceramicized at low temperatures, silicon alkoxide-added polysilazanes obtained by reacting polysilazanes with silicon alkoxides (for example, JP-A 5- 238827), polysilazane obtained by reacting polysilazane with dehydrated glycerin (for example, Japanese Patent Application Laid-Open No. 6-122852), polysilazane and alcohol The alcohol-added polysilazane obtained (for example, Japanese Patent Application Laid-Open No. 6-240208), the metal carboxylate-added polysilazane obtained by reacting polysilazane with a metal carboxylate (for example, , Japanese Patent Laid-Open Publication No. 6-299118), acetylacetonate complex-added polysilazane obtained by reacting polysilazane with metal-containing acetylacetonate complex (for example, JP KOKAI Publication No. 6-306329), metal microparticle-added polysilazane obtained by adding metal microparticles to polysilazane (for example, JP-A-7-196986), and the like.

作为聚硅氮烷溶液的溶剂,可使用脂肪族烃、脂环式烃、芳香族烃等烃溶剂、卤化烃溶剂、脂肪族醚、脂环式醚等醚类。为了促进向氧化硅化合物的改质,亦可添加胺或金属的触媒。As a solvent for the polysilazane solution, hydrocarbon solvents such as aliphatic hydrocarbons, alicyclic hydrocarbons, and aromatic hydrocarbons, halogenated hydrocarbon solvents, ethers such as aliphatic ethers, and alicyclic ethers can be used. In order to promote modification to a silicon oxide compound, an amine or metal catalyst may be added.

于使用聚硅氮烷作为无机材料的前驱物的情形时,可藉由加热或准分子等能量线的照射而使前驱物溶液硬化从而形成无机材料。In the case of using polysilazane as the precursor of the inorganic material, the precursor solution can be hardened by heating or irradiation of energy rays such as excimers to form the inorganic material.

将如上述般制备而成的无机材料的前驱物溶液涂布于基材上。为了提高密接性,亦可于基材上例如设置表面处理层或易接着层,为了防止水分或氧气等气体的渗入,亦可于基材上例如设置阻气层。作为前驱物溶液的涂布方法,可使用棒式涂布法、旋转涂布法、喷涂法、浸渍涂布法、模嘴涂布法、喷墨法等任意的涂布方法,就能够于相对大面积的基材上均匀地涂布前驱物溶液,以及能够于前驱物溶液硬化之前迅速地完成涂布的方面而言,较佳为棒式涂布法、模嘴涂布法及旋转涂布法。The precursor solution of the inorganic material prepared as above is coated on the substrate. In order to improve adhesion, for example, a surface treatment layer or an easy-adhesive layer can be provided on the substrate, and in order to prevent the infiltration of moisture or oxygen, for example, a gas barrier layer can also be provided on the substrate. As the coating method of the precursor solution, any coating method such as a bar coating method, a spin coating method, a spray coating method, a dip coating method, a die coating method, and an inkjet method can be used. In terms of uniformly coating the precursor solution on a large-area substrate and quickly completing the coating before the precursor solution hardens, bar coating, die coating and spin coating are preferred. Law.

涂布前驱物溶液后,为了使涂膜(前驱物膜)中的溶剂蒸发,亦可将基材保持在大气中或减压下。若该保持时间较短,则涂膜的黏度变得过低,而变得无法向涂膜转印凹凸图案,若保持时间过长,则前驱物的聚合反应进行,涂膜的黏度变得过高,而变得无法向涂膜转印凹凸图案。又,涂布前驱物溶液后,伴随着溶剂的蒸发的进行,涂膜的硬化进行,涂膜的黏度等物性亦于短时间内变化。就凹凸图案形成的稳定性的观点而言,较理想为图案转印可良好地进行的干燥时间范围充分广泛,其可根据干燥温度(保持温度)、干燥压力、前驱物的材料种类、前驱物的材料种类的混合比、前驱物溶液制备时所使用的溶剂量(前驱物的浓度)等进行调整。再者,只要直接保持基材,则涂膜(前驱物膜)中的溶剂蒸发,因此未必必须进行加热或送风等积极的干燥操作,只要将形成有涂膜的基材直接放置特定时间,或为了进行后续的步骤而于特定时间内进行搬送即可。After coating the precursor solution, the substrate may be kept in the atmosphere or under reduced pressure in order to evaporate the solvent in the coating film (precursor film). If the holding time is short, the viscosity of the coating film becomes too low, and the concave-convex pattern cannot be transferred to the coating film. If the holding time is too long, the polymerization reaction of the precursor proceeds, and the viscosity of the coating film becomes too high. High, it becomes impossible to transfer the concave-convex pattern to the coating film. In addition, after coating the precursor solution, the hardening of the coating film progresses with the evaporation of the solvent, and the physical properties such as the viscosity of the coating film also change in a short time. From the viewpoint of the stability of the concave-convex pattern formation, it is desirable that the drying time range in which the pattern transfer can be carried out well is sufficiently wide, which can be determined according to the drying temperature (holding temperature), drying pressure, the material type of the precursor, and the type of the precursor. The mixing ratio of the types of materials, the amount of solvent used in the preparation of the precursor solution (concentration of the precursor) and the like are adjusted. Furthermore, as long as the substrate is directly held, the solvent in the coating film (precursor film) evaporates, so it is not necessarily necessary to perform active drying operations such as heating or blowing air, as long as the substrate on which the coating film is formed is left for a specific period of time, Alternatively, it may be carried out within a specific time period in order to carry out subsequent steps.

继而,使用凹凸图案转印用的模具,而于涂膜形成凹凸图案。Next, a concave-convex pattern was formed on the coating film using a mold for transferring the concave-convex pattern.

可使用如下述的膜状模具(片状模具)或金属模具作为凹凸图案转印用的模具,较理想为使用具有柔软性或可挠性的膜状模具。A film mold (sheet mold) or metal mold as described below can be used as the mold for transferring the concave-convex pattern, and it is preferable to use a flexible or flexible film mold.

膜状模具的尺寸、尤其是长度可根据所制造的发光元件的尺寸、或以1次制造制程连续制造的发光元件的数量(批次数)而适当设定。例如,亦可制成长度10m以上的长条状模具,一面将卷取在辊上的膜状模具自辊连续地卷出,一面连续地转印至多个基材上。膜状模具的宽度可设为50~3000mm、厚度可设为1~500μm。于基材与凹凸形成材料之间,亦可为了提高密接性而实施表面处理或易接着处理。又,亦可视需要而于该等的凹凸图案面上实施脱模处理。凹凸图案可利用任意的方法形成任意的形状。膜状模具的凹凸图案可制成:透镜构造或具有光扩散或绕射等功能的构造;由点或线与间隙所构成的条纹构造;圆柱状、圆锥状、圆锥台状、三角柱状、三角锥上、三角锥台状、四角柱状、四角锥状、四角锥台状、多角柱状、多角锥状、多角锥台状等支柱构造;或者孔构造等任意的图案。其中,较理想为例如凹凸的间距并不均匀,凹凸的朝向并无指向性的不规则的凹凸图案。凹凸的平均间距较佳为150~650nm的范围内,更佳为150~300nm的范围内。凹凸的深度分布的平均值较佳为20~200nm的范围内,更佳为30~150nm的范围内。凹凸深度的标准偏差较佳为10~100nm的范围内,更佳为15~75nm的范围内。自此种凹凸图案绕射的光并非单一或窄频带的波长的光,具有相对广域的波长带,所绕射的光并无指向性,朝向所有方向。The size, especially the length, of the film mold can be appropriately set according to the size of the light-emitting element to be manufactured or the number of light-emitting elements to be continuously manufactured in one manufacturing process (number of batches). For example, a long mold having a length of 10 m or more may be produced, and the film mold wound on a roll may be continuously transferred to a plurality of substrates while being continuously unwound from the roll. The film mold can have a width of 50 to 3000 mm and a thickness of 1 to 500 μm. Between the base material and the unevenness forming material, surface treatment or easy-adhesion treatment may be given in order to improve the adhesiveness. In addition, if necessary, a mold release process may be performed on the uneven pattern surface. The concavo-convex pattern can be formed into any shape by any method. The concave-convex pattern of the film mold can be made into: lens structure or structure with functions of light diffusion or diffraction; stripe structure composed of points or lines and gaps; cylindrical, conical, truncated conical, triangular columnar, triangular Cone, triangular truncated pyramid, quadrangular columnar, quadrangular pyramidal, quadrangular truncated pyramidal, polygonal columnar, polygonal pyramidal, polygonal truncated pyramid and other pillar structures; or any pattern such as hole structure. Among them, an irregular concave-convex pattern in which the pitch of the concave-convex is not uniform and the orientation of the concave-convex is non-directional is ideal. The average pitch of the unevenness is preferably in the range of 150 to 650 nm, more preferably in the range of 150 to 300 nm. The average value of the depth distribution of unevenness is preferably in the range of 20 to 200 nm, more preferably in the range of 30 to 150 nm. The standard deviation of the unevenness depth is preferably in the range of 10 to 100 nm, more preferably in the range of 15 to 75 nm. The light diffracted from such a concavo-convex pattern is not a single or narrow-band wavelength light, but has a relatively wide wavelength band, and the diffracted light has no directivity and is oriented in all directions.

于使用膜状模具作为凹凸图案转印用的模具的情形时,亦可使用压抵辊而将模具压抵于前驱物膜。于使用压抵辊的辊制程中,与加压式相比,具有如下等优点:因模具与涂膜所接触的时间较短,故而可防止由模具或基材及供设置基材的平台等的热膨胀系数的差引起的图案变形;可防止由于前驱物膜中的溶剂的爆沸而于图案中产生气泡、或者残留气痕;因与基材(涂膜)进行线接触,故而可使转印压力及剥离力变小,而容易地应对大面积化;不会于压抵时夹带气泡。又,亦可一面压抵模具一面加热基材。作为使用压抵辊将模具压抵于涂膜(前驱物膜)的例,如图4所示般,向压抵辊122与搬送至其正下方的基材40之间送入膜状模具50,藉此可将膜状模具50的凹凸图案转印至基材40上的涂膜42。即,藉由压抵辊122将膜状模具50压抵于涂膜42时,一面同步搬送膜状模具50与基材40,一面以膜状模具50被覆基材40上的涂膜42的表面。此时,将压抵辊122压抵于膜状模具50的背面(与形成有凹凸图案的面相反侧的面)并且进行转动,藉此膜状模具50与基材40一面前进一面密接。再者,将长条的膜状模具50朝向压抵辊122送入时,自卷取有长条的膜状模具50的膜卷取辊直接卷出膜状模具50而使用较有利。When using a film-shaped mold as a mold for transferring a concavo-convex pattern, the mold may be pressed against the precursor film using a pressure roller. Compared with the pressurized type, in the roll manufacturing process using the pressure roller, it has the following advantages: because the contact time between the mold and the coating film is shorter, it can prevent the mold or the substrate and the platform for setting the substrate, etc. The pattern deformation caused by the difference in the thermal expansion coefficient of the precursor film can prevent bubbles or residual gas marks in the pattern due to the bumping of the solvent in the precursor film; due to the line contact with the substrate (coating film), the transfer can be made The printing pressure and peeling force are reduced, and it is easy to deal with large areas; no air bubbles will be trapped during pressing. In addition, the substrate may be heated while being pressed against the mold. As an example of pressing the mold against the coating film (precursor film) using a pressure roller, as shown in FIG. , whereby the concavo-convex pattern of the film mold 50 can be transferred to the coating film 42 on the substrate 40 . That is, when the film mold 50 is pressed against the coating film 42 by the pressing roller 122, the film mold 50 and the substrate 40 are conveyed synchronously, and the surface of the coating film 42 on the substrate 40 is covered with the film mold 50. . At this time, the pressing roller 122 is pressed against the back surface of the film mold 50 (the surface opposite to the surface on which the concave-convex pattern is formed) and rotated, whereby the film mold 50 and the substrate 40 are brought into close contact with each other while advancing. Furthermore, when feeding the elongated film mold 50 toward the pressing roller 122 , it is more advantageous to directly unwind the film mold 50 from the film take-up roller on which the elongated film mold 50 is wound.

亦可于将前驱物膜压抵于模具后,将前驱物膜进行预烧成。藉由进行预烧成,前驱物转化为无机材料而涂膜硬化,从而凹凸图案固化,而于剥离时图案变得难以变形。于进行预烧成的情形时,较佳为于大气中以室温~300℃的温度进行加热。再者,预烧成未必必须进行。又,于前驱物溶液中添加有藉由照射紫外线等光而产生酸或碱的材料的情形时,亦可照射例如以准分子UV光等紫外线为代表的能量线以代替将前驱物膜进行预烧成而使涂膜硬化。The precursor film may also be pre-fired after the precursor film is pressed against the mold. By performing pre-firing, the precursor is converted into an inorganic material to harden the coating film, thereby curing the concave-convex pattern, and the pattern becomes difficult to deform when peeled off. When performing calcination, it is preferable to heat at the temperature of room temperature - 300 degreeC in air|atmosphere. Furthermore, pre-firing does not necessarily have to be performed. In addition, when a material that generates an acid or a base by irradiation of light such as ultraviolet rays is added to the precursor solution, energy rays such as ultraviolet rays such as excimer UV light may be irradiated instead of pre-conditioning the precursor film. Baking hardens the coating film.

模具的压抵或前驱物膜的预烧成后,自涂膜(前驱物膜、或者藉由将前驱物膜进行转化而形成的无机材料膜)剥离模具。可采用公知的剥离方法作为模具的剥离方法。亦可一面加热涂膜一面剥离模具,藉此可防止自涂膜产生的气体逸出而于膜内产生气泡。于使用辊制程的情形时,与以加压式使用的板状模具相比,剥离力可变小,从而涂膜不会残留于模具而可容易地将模具自涂膜进行剥离。尤其是因一面加热涂膜一面进行压抵,故而反应容易进行,从而于刚压抵后模具变得容易自涂膜剥离。进而,为了提高模具的剥离性,亦可使用剥离辊。如图4所示般,将剥离辊123设置于压抵辊122的下游侧,藉由剥离辊123一面对涂膜42进行施力一面转动支持膜状模具50,藉此可将涂膜42上附着有膜状模具50的状态仅维持于压抵辊122与剥离辊123之间的距离(一定时间)。然后,于剥离辊123的下游侧以将膜状模具50向剥离辊123的上方提拉的方式变更膜状模具50的进路,藉此膜状模具50自形成有凹凸图案80的涂膜(凹凸构造层)142剥离。再者,于涂膜42上附着有膜状模具50的期间亦可进行上述的涂膜42的预烧成或加热。再者,于使用剥离辊123的情形时,例如可藉由一面自室温加热至300℃一面进行剥离而使模具50的剥离变得更容易。After pressing the mold or pre-firing the precursor film, the mold is peeled off from the coating film (precursor film or inorganic material film formed by converting the precursor film). A known peeling method can be used as the peeling method of the mold. The mold can also be peeled off while heating the coating film, thereby preventing the gas generated from the coating film from escaping and generating air bubbles in the film. In the case of using a roll process, the peeling force can be reduced compared to a press-type plate-shaped mold, and the mold can be easily peeled off from the coating film without remaining a coating film on the mold. In particular, since the pressing is carried out while heating the coating film, the reaction proceeds easily, and the mold is easily peeled off from the coating film immediately after pressing. Furthermore, in order to improve the releasability of a mold, you may use a peeling roll. As shown in FIG. 4 , the peeling roller 123 is arranged on the downstream side of the pressing roller 122, and the film-shaped mold 50 is rotated and supported by the peeling roller 123 while applying force to the coating film 42, whereby the coating film 42 can be removed. The state where the film mold 50 is adhered is maintained only for the distance between the pressing roller 122 and the peeling roller 123 (for a certain period of time). Then, on the downstream side of the peeling roller 123, the film-shaped mold 50 is pulled up to the upper side of the peeling roller 123. The route of the film-shaped mold 50 is changed, whereby the film-shaped mold 50 is formed from the coating film ( Concave-convex structure layer) 142 is peeled off. In addition, the above-mentioned pre-firing or heating of the coating film 42 may be performed while the film mold 50 is attached to the coating film 42 . Furthermore, when using the peeling roller 123, peeling of the mold 50 can be made easier by peeling, for example, heating from room temperature to 300 degreeC.

亦可于自形成有凹凸的涂膜(凹凸构造层)142剥离模具50后,使凹凸构造层142正式硬化。于本制造方法中,可藉由正式烧成而使凹凸构造层142正式硬化。于使用藉由溶胶凝胶法而转化为二氧化硅的前驱物的情形时,构成凹凸构造层的二氧化硅(非晶形二氧化硅)中所包含的羟基等由于正式烧成而脱离,从而凹凸构造层142变得更牢固。正式烧成可于200~1200℃的温度下进行5分钟~6小时左右。此时,于凹凸构造层142由二氧化硅所构成的情形时,视烧成温度、烧成时间而成为非晶质或结晶质、或者非晶质与结晶质的混合状态。再者,正式硬化未必必须进行。又,于前驱物溶液中添加有藉由照射紫外线等光而产生酸或碱的材料的情形时,可藉由照射例如准分子UV光等以紫外线为代表的能量线代替烧成凹凸构造层142,而使凹凸构造层142正式硬化。The uneven structure layer 142 may be fully cured after the mold 50 is peeled off from the uneven coating film (uneven structure layer) 142 . In this manufacturing method, the concavo-convex structure layer 142 can be formally hardened by main firing. In the case of using a precursor converted into silica by a sol-gel method, the hydroxyl group contained in the silica (amorphous silica) constituting the concave-convex structure layer is detached by main firing, thereby The concavo-convex structure layer 142 becomes stronger. The main firing can be carried out at a temperature of 200-1200° C. for about 5 minutes to 6 hours. At this time, when the concavo-convex structure layer 142 is made of silicon dioxide, it becomes amorphous or crystalline, or a mixed state of amorphous and crystalline depending on the firing temperature and firing time. Furthermore, formal hardening does not necessarily have to take place. In addition, when a material that generates acid or alkali by irradiation of ultraviolet light or other light is added to the precursor solution, the concave-convex structure layer 142 can be fired instead of being fired by irradiating energy rays such as excimer UV light such as ultraviolet light. , so that the concavo-convex structure layer 142 is formally hardened.

对凹凸图案转印用的模具的制造方法的例进行说明。首先,制作用以形成模具的凹凸图案的母模图案。母模的凹凸图案例如较佳为使用本申请人等的WO2012/096368号所记载的利用嵌段共聚物因加热而自组(微相分离)的方法(以下,适当称为“BCP(BlockCopolymer)热退火法”)、或WO2013/161454号所记载的利用嵌段共聚物于溶剂环境下自组的方法(以下,适当称为“BCP溶剂退火法”)、或WO2011/007878A1所揭示的藉由对聚合物膜上的蒸镀膜进行加热、冷却而由聚合物表面的褶皱形成凹凸的方法(以下,适当称为“BKL(Buckling)法”)而形成。亦可利用光微影法代替BCP热退火法、BKL法及BCP溶剂退火法而形成凹凸图案。除此以外,例如,亦可藉由切削加工法、电子束直接绘图法、粒子束加工法及操作探针加工法等微细加工法、以及使用微粒子的自组的微细加工法、或喷砂法等而制作母模的凹凸图案。于利用BCP热退火法及BCP溶剂退火法形成图案的情形时,形成图案的材料可使用任意的材料,但较佳为由选自由如聚苯乙烯的苯乙烯系聚合物、如聚甲基丙烯酸甲酯的聚甲基丙烯酸烷基酯、聚环氧乙烷、聚丁二烯、聚异戊二烯、聚乙烯吡啶、及聚乳酸所组成的群中的2种的组合所构成的嵌段共聚物。又,针对藉由溶剂退火处理而获得的凹凸图案,亦可藉由照射准分子UV光等紫外线所代表的能量线而进行蚀刻、或者藉由如RIE(反应性离子蚀刻)、ICP蚀刻的干式蚀刻法而进行蚀刻。又,亦可对经上述蚀刻的凹凸图案实施加热处理。An example of a method of manufacturing a mold for transferring a concavo-convex pattern will be described. First, a master pattern for forming the concavo-convex pattern of the mold is produced. For example, the concavo-convex pattern of the master mold is preferably the method of using the self-assembly (microphase separation) of block copolymers (hereinafter, appropriately referred to as "BCP (BlockCopolymer)) described in WO2012/096368 of the applicant. Thermal annealing method"), or the self-assembly method of block copolymers in a solvent environment described in WO2013/161454 (hereinafter, appropriately referred to as "BCP solvent annealing method"), or the method disclosed in WO2011/007878A1 by It is formed by a method of heating and cooling a vapor-deposited film on a polymer film to form unevenness from wrinkles on the polymer surface (hereinafter, appropriately referred to as "BKL (Buckling) method"). The concave-convex pattern can also be formed by using the photolithography method instead of the BCP thermal annealing method, the BKL method and the BCP solvent annealing method. In addition, for example, microfabrication methods such as cutting processing, electron beam direct mapping, particle beam processing, and manipulation probe processing, microfabrication using self-assembly of fine particles, or sandblasting can also be used. and so on to make the concave-convex pattern of the master mold. When using the BCP thermal annealing method and the BCP solvent annealing method to form a pattern, the material for forming the pattern can use any material, but it is preferably selected from styrene-based polymers such as polystyrene, such as polymethacrylic acid. A block composed of a combination of two types from the group consisting of polyalkylmethacrylate of methyl ester, polyethylene oxide, polybutadiene, polyisoprene, polyvinylpyridine, and polylactic acid copolymer. In addition, the uneven pattern obtained by solvent annealing can also be etched by irradiating energy rays represented by ultraviolet rays such as excimer UV light, or by dry etching such as RIE (reactive ion etching) or ICP etching. Etching is carried out by the type etching method. Moreover, you may heat-process the above-mentioned etched uneven|corrugated pattern.

藉由BCP热退火法或BKL法或BCP溶剂退火法等而形成图案的母模后,可以下述方式,藉由电铸法等而形成转印有母模的凹凸图案的模具。首先,可藉由无电电镀、溅镀或蒸镀等而于具有凹凸图案的母模上形成用以电铸处理的供成为导电层的籽晶层。关于籽晶层,为了使后续的电铸步骤中的电流密度均匀,且使藉由后续的电铸步骤而堆积的金属层的厚度一定,较佳为10nm以上。作为籽晶层的材料,例如可使用镍、铜、金、银、白金、钛、钴、锡、锌、铬、金-钴合金、金-镍合金、硼-镍合金、焊锡、铜-镍-铬合金、锡镍合金、镍-钯合金、镍-钴-磷合金、或该等的合金等。继而,于籽晶层上藉由电铸(电解电镀)而堆积金属层。关于金属层的厚度,例如以包括籽晶层的厚度的整体计,可设为10~30000μm的厚度。作为藉由电铸而堆积的金属层的材料,可使用可用作籽晶层的上述金属种类中的任一种。关于所形成的金属层,就用以后续的模具形成的树脂层的压抵、剥离及洗净等处理的容易性而言,较理想为具有适当的硬度及厚度。After the patterned master is formed by the BCP thermal annealing method, the BKL method, or the BCP solvent annealing method, a mold on which the concave-convex pattern of the master mold is transferred can be formed by electroforming or the like in the following manner. Firstly, a seed layer for electroforming to be a conductive layer can be formed on a master mold with a concave-convex pattern by electroless plating, sputtering or evaporation. The seed layer is preferably 10 nm or more in order to make the current density uniform in the subsequent electroforming step and to make the thickness of the metal layer deposited by the subsequent electroforming step constant. As the material of the seed layer, nickel, copper, gold, silver, platinum, titanium, cobalt, tin, zinc, chromium, gold-cobalt alloy, gold-nickel alloy, boron-nickel alloy, solder, copper-nickel alloy, etc. can be used, for example. - Chromium alloys, tin-nickel alloys, nickel-palladium alloys, nickel-cobalt-phosphorus alloys, or alloys thereof, etc. Next, a metal layer is deposited on the seed layer by electroforming (electrolytic plating). The thickness of the metal layer can be set to a thickness of 10 to 30000 μm in the whole including the thickness of the seed layer, for example. As the material of the metal layer deposited by electroforming, any one of the above-mentioned kinds of metals that can be used as the seed layer can be used. The formed metal layer preferably has appropriate hardness and thickness in terms of ease of handling such as pressing, peeling, and cleaning of the resin layer formed by the subsequent mold.

将以上述方式获得的包含籽晶层的金属层自具有凹凸图案的母模进行剥离而获得金属基板。关于剥离方法,可物理性剥离,亦可藉由使用使形成母模的凹凸图案的材料溶解的有机溶剂或酸、碱等使该等溶解并进行去除而剥离。将金属基板自母模剥离时,可利用洗净将所残留的材料成分去除。作为洗净方法,可利用使用界面活性剂等的湿式洗净或者使用紫外线或电浆的干式洗净。又,例如亦可使用黏着剂或接着剂而将所残留的材料成分进行附着除去等。以上述方式获得的自母模转印有图案的金属基板(金属模具)可用作凹凸图案转印用的模具。The metal layer including the seed layer obtained as described above was peeled off from the master mold having a concave-convex pattern to obtain a metal substrate. As for the peeling method, physical peeling may be used, and peeling may be performed by dissolving and removing the material for forming the concave-convex pattern of the master mold using an organic solvent, acid, alkali, or the like. When peeling the metal substrate from the master mold, remaining material components can be removed by washing. As a cleaning method, wet cleaning using a surfactant or the like, or dry cleaning using ultraviolet rays or plasma can be used. In addition, for example, an adhesive or an adhesive may be used to attach and remove remaining material components. The metal substrate (metal mold) on which the pattern has been transferred from the master mold obtained in the above manner can be used as a mold for transferring a concave-convex pattern.

进而,使用所获得的金属基板,将金属基板的凹凸构造(图案)转印至膜状的支持基板,藉此可制作如膜状模具般有可挠性的模具。例如将硬化性树脂涂布于支持基板后,将金属基板的凹凸构造压抵于树脂层并且使树脂层硬化。作为支持基板,例如可列举:由玻璃、石英、硅等无机材料构成的基材;由聚硅氧树脂、聚对苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚碳酸酯(PC)、环烯聚合物(COP)、聚甲基丙烯酸甲酯(PMMA)、聚苯乙烯(PS)、聚酰亚胺(PI)、聚芳酯等有机材料构成的基材、镍、铜、铝等金属材料。又,支持基板的厚度可设为1~500μm的范围。Furthermore, by using the obtained metal substrate, the concavo-convex structure (pattern) of the metal substrate is transferred to a film-form support substrate, whereby a flexible mold like a film-form mold can be produced. For example, after applying a curable resin to a support substrate, the uneven structure of the metal substrate is pressed against the resin layer to harden the resin layer. As the supporting substrate, for example, substrates made of inorganic materials such as glass, quartz, and silicon; , polycarbonate (PC), cycloolefin polymer (COP), polymethyl methacrylate (PMMA), polystyrene (PS), polyimide (PI), polyarylate and other organic materials material, nickel, copper, aluminum and other metal materials. In addition, the thickness of the supporting substrate can be set in the range of 1 to 500 μm.

作为硬化性树脂,例如可使用光硬化及热硬化、湿气硬化型、化学硬化型(二液混合)等的树脂。具体而言,例如可列举:环氧系、丙烯酸系、甲基丙烯酸系、乙烯醚系、氧杂环丁烷系、胺酯系、三聚氰胺系、脲系、聚酯系、聚烯烃系、酚系、交联型液晶系、氟系、聚硅氧系、聚酰胺系等单体、低聚物、聚合物等各种树脂。硬化性树脂的厚度较佳为0.5~500μm的范围内。若厚度未达上述下限,则硬化树脂层的表面所形成的凹凸的高度容易变得不充分,若厚度超过上述上限,则有如下可能性,即硬化时所产生的树脂的体积变化的影响变大,而变得无法良好地形成凹凸形状。As the curable resin, resins such as photocurable and thermally curable, moisture curable, chemically curable (two-liquid mixture) and the like can be used, for example. Specifically, for example, epoxy-based, acrylic-based, methacrylic-based, vinyl ether-based, oxetane-based, urethane-based, melamine-based, urea-based, polyester-based, polyolefin-based, phenol-based Various resins such as monomers, oligomers, polymers, etc. The thickness of the curable resin is preferably within a range of 0.5 to 500 μm. If the thickness is less than the above-mentioned lower limit, the height of the unevenness formed on the surface of the cured resin layer is likely to become insufficient, and if the thickness exceeds the above-mentioned upper limit, there is a possibility that the influence of the volume change of the resin that occurs during curing may be reduced. If it is too large, it becomes impossible to form the concave-convex shape well.

作为涂布硬化性树脂的方法,例如可采用旋转涂布法、喷涂法、浸渍涂布法、滴下法、凹版印刷法、网版印刷法、凸版印刷法、模嘴涂布法、淋幕式涂布法、喷墨法、溅镀法等各种涂布方法。进而,作为使硬化性树脂硬化的条件,根据所使用的树脂的种类而不同,例如较佳为硬化温度为室温~250℃的范围内,硬化时间为0.5分钟~3小时的范围内。又,亦可为藉由照射如紫外线或电子束的能量线而使硬化性树脂硬化的方法,于该情形时,照射量较佳为20mJ/cm2~10J/cm2的范围内。As the method of coating the curable resin, for example, spin coating method, spray coating method, dip coating method, drop method, gravure printing method, screen printing method, letterpress printing method, die coating method, curtain coating method, etc. Various coating methods such as coating method, inkjet method, sputtering method, etc. Furthermore, the conditions for curing the curable resin vary depending on the type of resin used, for example, the curing temperature is preferably in the range of room temperature to 250° C., and the curing time is in the range of 0.5 minutes to 3 hours. Also, a method of curing the curable resin by irradiating energy rays such as ultraviolet rays or electron beams may be used. In this case, the irradiation dose is preferably in the range of 20 mJ/cm 2 to 10 J/cm 2 .

继而,自硬化后的硬化树脂层卸下金属基板。作为卸下金属基板的方法,并不限定于机械剥离法,可采用公知的方法。可以上述方式获得的于支持基板上具有形成有凹凸的硬化树脂层的膜状的树脂模具可用作凹凸图案转印用的模具。Next, the metal substrate is detached from the cured cured resin layer. The method for detaching the metal substrate is not limited to the mechanical peeling method, and known methods can be used. The film-shaped resin mold having a cured resin layer formed with concavities and convexities on a support substrate obtained in the above manner can be used as a mold for transferring concavo-convex patterns.

又,于利用上述方法所获得的金属基板的凹凸构造(图案)上涂布橡胶系的树脂材料,使所涂布的树脂材料硬化,自金属基板进行剥离,藉此可制作转印有金属基板的凹凸图案的橡胶模具。所获得的橡胶模具可用作凹凸图案转印用的模具。可使用天然橡胶及合成橡胶作为橡胶系的树脂材料,尤佳为聚硅氧橡胶、或聚硅氧橡胶与其他材料的混合物或共聚物。作为聚硅氧橡胶,例如可使用聚有机硅氧烷、交联型聚有机硅氧烷、聚有机硅氧烷/聚碳酸酯共聚物、聚有机硅氧烷/聚苯共聚物、聚有机硅氧烷/聚苯乙烯共聚物、聚三甲基硅烷基丙炔、聚四甲基戊烯等。聚硅氧橡胶与其他树脂材料相比,廉价,且耐热性优异,导热性较高,有弹性,即便于高温条件下亦难以变形,因此于高温条件下进行凹凸图案转印制程的情形时较佳。进而,聚硅氧橡胶系的材料因气体或水蒸气穿透性较高,故而可使被转印材的溶剂或水蒸气容易地穿透。因此,于为了向树脂材料或无机材料的前驱物溶液的膜转印凹凸图案而使用橡胶模具的情形时,聚硅氧橡胶系的材料较佳。又,橡胶系材料的表面自由能量较佳为25mN/m以下。藉此,将橡胶模具的凹凸图案转印至基材上的涂膜时的脱模性变良好,而可防止转印不良。橡胶模具例如可设为长度50~1000mm、宽度50~3000mm、厚度1~50mm。又,亦可视需要而于橡胶模具的凹凸图案面上实施脱模处理。In addition, a rubber-based resin material is applied to the concave-convex structure (pattern) of the metal substrate obtained by the above method, and the applied resin material is cured and peeled off from the metal substrate, whereby a transferred metal substrate can be produced. rubber mold with embossed pattern. The obtained rubber mold can be used as a mold for transferring a concavo-convex pattern. Natural rubber and synthetic rubber can be used as the rubber-based resin material, especially silicone rubber, or a mixture or copolymer of silicone rubber and other materials. As the silicone rubber, for example, polyorganosiloxane, cross-linked polyorganosiloxane, polyorganosiloxane/polycarbonate copolymer, polyorganosiloxane/polyphenylene copolymer, polyorganosiloxane Oxane/polystyrene copolymer, polytrimethylsilylpropyne, polytetramethylpentene, etc. Compared with other resin materials, silicone rubber is inexpensive, has excellent heat resistance, high thermal conductivity, is elastic, and is difficult to deform even under high temperature conditions. better. Furthermore, since silicone rubber-based materials have high gas or water vapor permeability, they can easily pass through the transfer material's solvent or water vapor. Therefore, when a rubber mold is used to transfer a concave-convex pattern to a film of a resin material or a precursor solution of an inorganic material, a silicone rubber-based material is preferable. In addition, the surface free energy of the rubber-based material is preferably 25 mN/m or less. Thereby, when transferring the uneven|corrugated pattern of a rubber mold to the coating film on a base material, the releasability becomes favorable, and transfer failure can be prevented. The rubber mold can be, for example, a length of 50 to 1000 mm, a width of 50 to 3000 mm, and a thickness of 1 to 50 mm. In addition, if necessary, a release treatment may be performed on the uneven pattern surface of the rubber mold.

<第1电极的形成><Formation of the first electrode>

以上述方式于基材40上形成凹凸构造层142后,为了将附着于基材40及凹凸构造层142的异物等去除,而利用毛刷进行洗净,继而利用使用水系溶剂的碱性洗净剂及有机溶剂将有机物等去除。继而,如图1(a)、(b)所示般于凹凸构造层142上将第1电极92以将形成于凹凸构造层142的表面的凹凸图案亦维持在第1电极92上的方式进行积层。如此,形成具有凹凸图案的第1电极92。作为积层第1电极92的方法,可适当采用蒸镀法、溅镀法、旋转涂布法等公知的方法。该等方法中,就提高密接性的观点而言,较佳为溅镀法。再者,于溅镀时亦有基材40及凹凸构造层142被置于300℃左右的高温下的情况。于所成膜的第1电极上涂布光阻剂并以第1电极用遮罩图案进行曝光后,利用显影液进行显影,继而利用蚀刻液对第1电极进行蚀刻,藉此可获得特定图案的第1电极92。较理想为利用毛刷将所获得的第1电极92洗净,利用使用水系溶剂的碱性洗净剂及有机溶剂将有机物等去除后,进行UV臭氧处理。After the concave-convex structure layer 142 is formed on the base material 40 as described above, in order to remove foreign matter etc. adhering to the base material 40 and the concave-convex structure layer 142, it is cleaned with a brush, followed by alkaline cleaning using an aqueous solvent. Agents and organic solvents to remove organic matter, etc. Then, as shown in FIG. laminated. In this manner, the first electrode 92 having a concavo-convex pattern is formed. As a method of laminating the first electrode 92 , known methods such as vapor deposition, sputtering, and spin coating can be suitably used. Among these methods, the sputtering method is preferable from the viewpoint of improving the adhesion. Furthermore, there are cases where the substrate 40 and the uneven structure layer 142 are placed at a high temperature of about 300° C. during sputtering. Apply a photoresist on the formed first electrode, expose it with a mask pattern for the first electrode, develop it with a developer, and then etch the first electrode with an etchant to obtain a specific pattern The first electrode 92. It is preferable to clean the obtained first electrode 92 with a brush, remove organic substances and the like with an alkaline detergent using an aqueous solvent and an organic solvent, and then perform UV ozone treatment.

<有机层的形成><Formation of organic layer>

继而,于第1电极92上积层有机层94。作为积层有机层94的方法,可适当采用蒸镀法、溅镀法、旋转涂布法、模嘴涂布法等公知的方法。有机层94的图案化可利用于基材上配置特定形状的遮罩而进行成膜等公知的图案化方法而进行。Next, an organic layer 94 is laminated on the first electrode 92 . As a method for laminating the organic layer 94 , known methods such as vapor deposition, sputtering, spin coating, and die coating can be suitably used. The patterning of the organic layer 94 can be performed using a known patterning method such as forming a film by disposing a mask of a specific shape on a base material.

<第2电极的形成><Formation of the second electrode>

继而,于有机层94上积层第2电极(金属电极)98。金属电极98可采用蒸镀法、溅镀法等公知的方法进行积层。金属电极98的图案化可利用于基材上配置特定形状的遮罩而进行成膜等公知的图案化方法而进行。Next, a second electrode (metal electrode) 98 is laminated on the organic layer 94 . The metal electrode 98 can be laminated by known methods such as vapor deposition and sputtering. The patterning of the metal electrode 98 can be performed using a known patterning method such as forming a film by disposing a mask of a specific shape on a base material.

<密封><Sealing>

进而,如图1(a)、(b)所示般,安装密封构件101而密封有机层94。于制作此种密封构造时,首先,于基材40上的配置有凹凸构造层142的面上以包围有机层94的方式形成接着剂层103。使用能够扫描的分注器及/或能够移动的载置台等而涂布接着剂,藉此可于所需的位置形成接着剂层103。又,藉由控制分注器的扫描速度及喷出量,而可以所需的线宽形成接着剂层103。继而,将密封构件101以与基材40对向的方式设置于凹凸构造层142、第1电极92、有机层94及金属电极98的上方,经由接着剂层103而与基材40接着,从而密封基材40与密封构件101之间的空间105。于接着剂层103由藉由能量线照射而硬化的材料所形成的情形时,于密封后对接着剂层103照射能量线而使接着剂层103硬化。例如于光硬化型接着剂的情形时,自藉由高压水银灯或卤素灯而获得的紫外区域,将可见区域的光自密封构件101侧或基材40侧进行照射,藉此可使接着剂层103硬化。又,于接着剂层103为热硬化性的情形时,可藉由将接着剂层103于例如50~150℃的范围内进行加热而使之硬化。藉此,基材40与密封构件101一体化,而于密封空间105内配置有机层94。Furthermore, as shown in FIG.1(a), (b), the sealing member 101 is attached, and the organic layer 94 is sealed. When producing such a sealing structure, first, the adhesive layer 103 is formed on the surface of the substrate 40 on which the uneven structure layer 142 is disposed so as to surround the organic layer 94 . The adhesive layer 103 can be formed at a desired position by applying the adhesive using a scannable dispenser and/or a movable stage. In addition, the adhesive layer 103 can be formed with a desired line width by controlling the scanning speed and discharge amount of the dispenser. Next, the sealing member 101 is disposed on the concave-convex structure layer 142, the first electrode 92, the organic layer 94, and the metal electrode 98 so as to face the substrate 40, and is bonded to the substrate 40 through the adhesive layer 103, thereby The space 105 between the base material 40 and the sealing member 101 is sealed. When the adhesive layer 103 is formed of a material cured by energy ray irradiation, the adhesive layer 103 is irradiated with energy rays after sealing to harden the adhesive layer 103 . For example, in the case of a photocurable adhesive, the visible region of light is irradiated from the sealing member 101 side or the substrate 40 side from the ultraviolet region obtained by a high-pressure mercury lamp or a halogen lamp, thereby making the adhesive layer 103 Hardened. Moreover, when the adhesive agent layer 103 is thermosetting, it can harden by heating the adhesive agent layer 103 in the range of 50-150 degreeC, for example. Thereby, the base material 40 and the sealing member 101 are integrated, and the organic layer 94 is disposed in the sealed space 105 .

再者,于形成有机层94后,较佳为不使该等与大气接触,而例如于氮气环境下(例如,使用经纯度99.999%以上的高纯度氮气置换的手套箱)下进行密封。又,于密封步骤中,虽于上述的说明中,是于基材40上形成接着剂层103后设置密封构件101,但亦可以与基材40对向的方式于与基材40之间隔着空间而设置密封构件101后,向该空间注入接着剂而形成接着剂层103。Furthermore, after the organic layer 94 is formed, it is preferable not to expose it to the atmosphere, but to seal it under, for example, a nitrogen atmosphere (for example, use a glove box replaced with high-purity nitrogen with a purity of 99.999% or higher). In addition, in the sealing step, although in the above description, the sealing member 101 is provided after the adhesive layer 103 is formed on the base material 40, it may be placed between the base material 40 and the base material 40 so as to face the base material 40. After the sealing member 101 is provided in the space, an adhesive is injected into the space to form the adhesive layer 103 .

藉由如以上的制造方法而制作图1(a)所示的发光元件100。The light-emitting element 100 shown in FIG. 1( a ) is produced by the above-mentioned production method.

<光学功能层的配置><Arrangement of Optical Functional Layer>

进而,亦可如图1(b)所示般,于基材40的与形成有凹凸构造层142的面相反侧的面(于发光元件的形成后成为光提取面的面)配置光学功能层142a。Furthermore, as shown in FIG. 1( b ), an optical function layer may be disposed on the surface of the substrate 40 opposite to the surface on which the concave-convex structure layer 142 is formed (the surface that becomes the light extraction surface after the formation of the light-emitting element). 142a.

光学功能层142a可利用与凹凸构造层142相同的方法直接形成于基材40上。或者,亦可于与基材40不同的基材上,利用与凹凸构造层142相同的方法形成光学功能层142a,将其经由黏着剂层及/或接着剂层而安装于基材40上。The optical function layer 142a can be directly formed on the substrate 40 by the same method as the concave-convex structure layer 142 . Alternatively, the optical function layer 142a can also be formed on a base material different from the base material 40 by the same method as the concave-convex structure layer 142, and installed on the base material 40 through an adhesive layer and/or an adhesive layer.

作为黏着剂层及/或接着剂层的材料,可适当应用能够于基材40上接着光学功能层142a的公知材料,例如亦可适当应用丙烯酸系黏着剂、乙烯-乙酸乙烯酯共聚物、天然橡胶系黏着剂、聚异丁烯、丁基橡胶、苯乙烯-丁烯-苯乙烯共聚物、苯乙烯-异丁烯-苯乙烯嵌段共聚物等合成橡胶系黏着剂、聚胺酯系黏着剂、聚酯系黏着剂,亦可使用市售品(Norland公司制造的UV硬化型光学用接着剂NOA60、NOA61、NOA71,NOA72、NOA81、东亚合成制造的UV-3400)。该等中,就黏着剂层及/或接着剂层不会对自基材40射出的光的光程造成影响的观点而言,较理想为使用具有与基材40的折射率同等的折射率的黏着剂或接着剂。涂布此种黏着剂及接着剂的方法并无特别限制,可适当采用公知的方法。再者,黏着剂及接着剂亦可涂布于基材40及光学功能层142a中的任一者上。As the material of the adhesive layer and/or the adhesive layer, well-known materials capable of bonding the optical function layer 142a on the substrate 40 can be suitably applied, for example, acrylic adhesives, ethylene-vinyl acetate copolymers, natural Rubber-based adhesives, polyisobutylene, butyl rubber, styrene-butylene-styrene copolymer, styrene-isobutylene-styrene block copolymer, etc. synthetic rubber-based adhesives, polyurethane-based adhesives, polyester-based adhesives As an alternative, commercially available products (UV curable optical adhesives NOA60, NOA61, NOA71, NOA72, NOA81 manufactured by Norland Corporation, UV-3400 manufactured by Toagosei) can also be used. Among them, from the viewpoint that the adhesive layer and/or the adhesive layer do not affect the optical path of light emitted from the base material 40, it is preferable to use a material having a refractive index equal to that of the base material 40. Adhesives or adhesives. The method of applying such an adhesive and adhesive is not particularly limited, and known methods can be appropriately used. Furthermore, the adhesive and the bonding agent can also be coated on any one of the base material 40 and the optical function layer 142a.

再者,光学功能层142a的配置可于形成凹凸构造层142前实施,亦可于形成凹凸构造层142后实施,或者亦可于密封步骤后实施,实施该等步骤的顺序并无特别限制。Furthermore, the disposition of the optical function layer 142a can be implemented before the formation of the concave-convex structure layer 142, or after the formation of the concave-convex structure layer 142, or after the sealing step, and the order of these steps is not particularly limited.

藉由以上的方法,而形成如图1(b)所示的包括光学功能层142a的发光元件100a。By the above method, the light emitting element 100a including the optical function layer 142a as shown in FIG. 1( b ) is formed.

再者,作为用于形成凹凸构造层142的无机材料的前驱物,亦可使用TiO2、ZnO、ZnS、ZrO2、Al2O3、BaTiO3、SrTiO2、ITO等的前驱物代替上述二氧化硅的前驱物。Furthermore, as precursors of inorganic materials for forming the uneven structure layer 142, precursors such as TiO 2 , ZnO, ZnS, ZrO 2 , Al 2 O 3 , BaTiO 3 , SrTiO 2 , and ITO may be used instead of the above two. Precursor of silicon oxide.

又,除溶胶凝胶法外,亦可使用应用无机材料的微粒子的分散液的方法、液相沈积法(LPD:Liquid Phase Deposition)等而形成凹凸构造层142。In addition to the sol-gel method, the concave-convex structure layer 142 may be formed using a method using a dispersion liquid of fine particles of an inorganic material, a liquid phase deposition method (LPD: Liquid Phase Deposition), or the like.

于使用硬化性树脂而形成凹凸构造层142的情形时,例如于将硬化性树脂涂布于基材后,一面将具有凹凸图案的模具压抵于所涂布的硬化性树脂层一面使涂膜进行硬化,藉此可将模具的凹凸图案转印至硬化性树脂层。硬化性树脂亦可利用有机溶剂进行稀释后进行涂布。作为该情形时所使用的有机溶剂,可选择使硬化前的树脂溶解者而使用。例如可自甲醇、乙醇、异丙醇(IPA)等醇系溶剂;丙酮、甲基乙基酮、甲基异丁基酮(MIBK)等酮系溶剂等公知者中进行选择。作为涂布硬化性树脂的方法,例如可采用旋转涂布法、喷涂法、浸渍涂布法、滴下法、凹版印刷法、网版印刷法、凸版印刷法、模嘴涂布法、淋幕式涂布法、喷墨法、溅镀法等各种涂布方法。作为具有凹凸图案的模具,例如可使用膜状模具、金属模具等所需的模具。进而,作为使硬化性树脂硬化的条件,根据所使用的树脂的种类而不同,但例如较佳为硬化温度为室温~250℃的范围内,且硬化时间为0.5分钟~3小时的范围内。又,亦可为藉由照射如紫外线或电子束的能量线而进行硬化的方法,于该情形时,照射量较佳为20mJ/cm2~10J/cm2的范围内。In the case of forming the concave-convex structure layer 142 using curable resin, for example, after coating the curable resin on the substrate, a mold having a concave-convex pattern is pressed against the coated curable resin layer to form the coating film. By performing curing, the concavo-convex pattern of the mold can be transferred to the curable resin layer. The curable resin can also be applied after being diluted with an organic solvent. As an organic solvent used in this case, what dissolves the resin before hardening can be selected and used. For example, alcohol-based solvents such as methanol, ethanol, and isopropanol (IPA); and ketone-based solvents such as acetone, methyl ethyl ketone, and methyl isobutyl ketone (MIBK) can be selected from known ones. As the method of coating the curable resin, for example, spin coating method, spray coating method, dip coating method, drop method, gravure printing method, screen printing method, letterpress printing method, die coating method, curtain coating method, etc. Various coating methods such as coating method, inkjet method, sputtering method, etc. As the mold having a concavo-convex pattern, for example, a desired mold such as a film mold or a metal mold can be used. Furthermore, although the conditions for curing the curable resin vary depending on the type of resin used, for example, the curing temperature is preferably in the range of room temperature to 250° C., and the curing time is in the range of 0.5 minutes to 3 hours. Also, a method of curing by irradiating energy rays such as ultraviolet rays or electron beams may be used, and in this case, the irradiation dose is preferably in the range of 20 mJ/cm 2 to 10 J/cm 2 .

又,于上述的制造方法中,藉由于基材40上形成涂膜(前驱物膜)并将模具向该涂膜进行推压而制造凹凸构造层142,但亦可代替上述方法,藉由于模具的凹凸图案上形成前驱物膜,将该前驱物膜贴合于基材40并将模具进行剥离而将凹凸构造层142形成于基材40上。于该情形时,作为将前驱物膜形成于模具上的方法,除作为将前驱物溶液涂布于基材40上的方法的上述涂布方法外,亦可使用蒸镀、溅镀等物理气相沈积(PVD)法、化学气相沈积(CVD)法等的使用公知的干式制程的方法。于该情形时,可形成由金属、金属氧化物、金属氮化物、金属氮氧化物、金属硫化物、金属碳化物、金属卤化物、又该等的混合物(金属氮氧化物、金属卤氧化物、金属碳氮化物等)等所构成的凹凸构造层142。In addition, in the above-mentioned manufacturing method, the concave-convex structure layer 142 is manufactured by forming a coating film (precursor film) on the base material 40 and pressing the mold against the coating film, but instead of the above method, by using a mold A precursor film is formed on the concave-convex pattern, the precursor film is attached to the substrate 40 and the mold is peeled off to form the concave-convex structure layer 142 on the substrate 40 . In this case, as a method of forming the precursor film on the mold, in addition to the above-mentioned coating method as a method of coating the precursor solution on the substrate 40, physical vapor deposition such as vapor deposition and sputtering may also be used. A method using a known dry process such as a deposition (PVD) method and a chemical vapor deposition (CVD) method. In this case, metals, metal oxides, metal nitrides, metal oxynitrides, metal sulfides, metal carbides, metal halides, and mixtures thereof (metal oxynitrides, metal oxyhalides) can be formed. , metal carbonitride, etc.) and the concave-convex structure layer 142 composed of.

使用干式制程形成于模具上的凹凸构造层例如可利用如下方法贴合于基材40。首先,于基材40上涂布接着剂。以基材40上的接着剂层与模具上的凹凸构造层接着的方式将基材40与模具进行重合,使接着剂硬化。藉此,基材40与凹凸构造层经由接着剂而接合。继而,将模具自凹凸构造层进行剥离。藉此,可形成于基材40上形成有凹凸构造层142的绕射光栅基板140。The concave-convex structure layer formed on the mold by dry process can be bonded to the substrate 40 by the following method, for example. First, an adhesive is coated on the substrate 40 . The base material 40 and the mold are superimposed so that the adhesive layer on the base material 40 adheres to the concave-convex structure layer on the mold, and the adhesive is hardened. Thereby, the base material 40 and the concavo-convex structure layer are bonded via the adhesive. Next, the mold was peeled off from the concavo-convex structure layer. In this way, the diffraction grating substrate 140 in which the concavo-convex structure layer 142 is formed on the base material 40 can be formed.

进而,亦可于凹凸构造层142的表面形成被覆层(未图示)。被覆层较佳为具有凹凸构造层142的凹凸深度的标准偏差的25~150%的范围内的膜厚。藉此,于凹凸构造层142的表面存在异物或缺陷的情形时可被覆该等,因此可有效地抑制发光元件100、100a的漏电流,又,发光元件100、100a具有良好的光提取效率。Furthermore, a coating layer (not shown) may also be formed on the surface of the concavo-convex structure layer 142 . The coating layer preferably has a film thickness within a range of 25 to 150% of the standard deviation of the unevenness depth of the unevenness structure layer 142 . Thereby, when there are foreign substances or defects on the surface of the concave-convex structure layer 142, they can be covered, so the leakage current of the light-emitting elements 100, 100a can be effectively suppressed, and the light-emitting elements 100, 100a have good light extraction efficiency.

作为被覆层的材料(被覆材料),可使用于作为可用作凹凸构造层142的材料的材料于上述中所例示的SiOX、TiO2、ZnO、ZrO2、Al2O3、ZnS、BaTiO3、SrTiO2、ITO等中含有公知的微粒子、填料、紫外线吸收材料等者等。尤其是较理想为使用与用作凹凸构造层142的材料的材料相同的材料而形成被覆层。由于被覆材料与凹凸构造层142的材料为相同的材料,故而可抑制于被覆层与凹凸构造层142之间的界面的光的反射。于藉由溶胶凝胶法而形成被覆层的情形时,关于用于形成被覆层的无机材料的前驱物溶液,较理想为使用较用于形成凹凸构造层142的前驱物溶液,进一步经溶剂稀释而成者。藉此,变得容易以较凹凸构造层142薄的所需膜厚形成被覆层。As the material of the coating layer (coating material), SiOx , TiO 2 , ZnO, ZrO 2 , Al 2 O 3 , ZnS, and BaTiO exemplified above as materials that can be used as the material of the uneven structure layer 142 can be used. 3. SrTiO 2 , ITO, etc. contain known fine particles, fillers, ultraviolet absorbing materials, and the like. In particular, it is preferable to form the covering layer using the same material as that used for the uneven structure layer 142 . Since the covering material is the same material as that of the uneven structure layer 142 , reflection of light at the interface between the covering layer and the uneven structure layer 142 can be suppressed. In the case of forming the coating layer by the sol-gel method, as for the precursor solution of the inorganic material used for forming the coating layer, it is preferable to use a precursor solution for forming the concave-convex structure layer 142 and further dilute it with a solvent. become one. This makes it easier to form the covering layer with a desired film thickness thinner than the concavo-convex structure layer 142 .

又,除溶胶凝胶法外,亦可使用应用无机材料的微粒子的分散液的方法、液相沈积法(LPD:Liquid Phase Deposition)、使用聚硅氮烷的方法等而形成被覆层。In addition to the sol-gel method, a method using a dispersion of fine particles of an inorganic material, a liquid phase deposition method (LPD: Liquid Phase Deposition), a method using polysilazane, etc. can also be used to form the coating layer.

又,亦可使用硅烷偶合剂作为被覆材料而形成被覆层。藉此,可提高被覆层与形成于其上的电极等层之间的密接性,而于发光元件100、100a的制造步骤中的洗净步骤或高温处理步骤中的耐性提高。被覆层所使用的硅烷偶合剂的种类并无特别限制,例如可使用RSiX3(R为包含选自乙烯基、缩水甘油氧基、丙烯酰基、甲基丙烯酰基、胺基及巯基中的至少1种的有机官能基,X为卤元素或烷氧基)所示的有机化合物。Moreover, a coating layer can also be formed using a silane coupling agent as a coating material. Thereby, the adhesion between the coating layer and layers such as electrodes formed thereon can be improved, and the resistance in the cleaning step or high-temperature treatment step in the manufacturing steps of the light-emitting elements 100 and 100a can be improved. The type of silane coupling agent used in the coating layer is not particularly limited. For example, RSiX 3 (R is at least 1 group selected from vinyl, glycidyloxy, acryloyl, methacryloyl, amine and mercapto) can be used. organic functional group, X is an organic compound represented by a halogen element or an alkoxyl group).

又,作为被覆层的材料,除上述的无机材料外,亦可使用硬化性树脂材料。作为硬化性树脂材料,可使用作为可用作凹凸构造层142的材料的材料的于上述中所例示的硬化性树脂材料。于使用硬化性树脂而形成被覆层的情形时,例如可藉由将硬化性树脂涂布于凹凸构造层142上后进行硬化而形成被覆层。In addition, as the material of the coating layer, curable resin materials may be used in addition to the above-mentioned inorganic materials. As the curable resin material, the curable resin materials exemplified above as materials that can be used as the material of the concavo-convex structure layer 142 can be used. When a curable resin is used to form the covering layer, for example, the covering layer can be formed by applying the curable resin on the uneven structure layer 142 and then curing it.

进而,亦可对凹凸构造层142的表面(于形成被覆层的情形时为被覆层的表面)进行疏水化处理。疏水化处理的方法只要使用已知的方法即可,例如若为二氧化硅表面,则亦可利用二甲基二氯硅烷、三甲基烷氧基硅烷等进行疏水化处理,亦可使用利用六甲基二硅氮烷等三甲基硅烷化剂与聚硅氧油进行疏水化处理的方法,亦可使用应用超临界二氧化碳的金属氧化物粉末的表面处理方法。若凹凸构造层142的表面为疏水性,则于发光元件100、100a的制造步骤中可容易地将水分自凹凸构造层142表面去除,因此可防止发光元件100、100a中的如暗点的缺陷的产生、或装置的劣化。Furthermore, the surface of the concavo-convex structure layer 142 (the surface of the coating layer when the coating layer is formed) may also be subjected to a hydrophobization treatment. The method of hydrophobization treatment can be used as long as known methods are used. For example, if it is a silica surface, hydrophobization treatment can also be carried out by using dimethyldichlorosilane, trimethylalkoxysilane, etc., or using A method of hydrophobizing a trimethylsilylating agent such as hexamethyldisilazane and silicone oil, or a surface treatment method of metal oxide powder using supercritical carbon dioxide can also be used. If the surface of the uneven structure layer 142 is hydrophobic, moisture can be easily removed from the surface of the uneven structure layer 142 in the manufacturing steps of the light-emitting elements 100, 100a, so defects such as dark spots in the light-emitting elements 100, 100a can be prevented. generation, or deterioration of the device.

又,亦可于凹凸构造层142的表面(于形成被覆层的情形时为被覆层的表面),为了防止水分或氧气等气体的渗入而设置阻气层。In addition, a gas barrier layer may be provided on the surface of the concavo-convex structure layer 142 (the surface of the coating layer when the coating layer is formed) in order to prevent the penetration of moisture, oxygen, and other gases.

[实施例][Example]

以下,藉由实施例及比较例而对本发明的发光元件具体地进行说明,但本发明并不限定于该等实施例。于以下的实施例1、2及比较例1~3中,使用分别不同的绕射光栅基板或没有凹凸图案的基板而制作发光元件,并对发光元件的透明性及发光效率(功率效率)进行评价。Hereinafter, the light-emitting device of the present invention will be specifically described using examples and comparative examples, but the present invention is not limited to these examples. In the following Examples 1 and 2 and Comparative Examples 1 to 3, light-emitting elements were produced using different diffraction grating substrates or substrates without concavo-convex patterns, and the transparency and luminous efficiency (power efficiency) of the light-emitting elements were evaluated. Evaluation.

实施例1Example 1

<膜状模具的制作><Production of film mold>

首先,为了制作绕射光栅基板,使用BCP溶剂退火法而制作具有凹凸表面的膜状模具。准备如下述的由聚苯乙烯(以下,适当简略为“PS”)与聚甲基丙烯酸甲酯(以下,适当简略为“PMMA”)所构成的Polymer Source公司制造的嵌段共聚物。First, in order to produce a diffraction grating substrate, a film mold having an uneven surface was fabricated using the BCP solvent annealing method. A block copolymer manufactured by Polymer Source Co., Ltd. composed of polystyrene (hereinafter, abbreviated as "PS" as appropriate) and polymethyl methacrylate (hereinafter, abbreviated as "PMMA" as appropriate) as described below was prepared.

PS片段的Mn=510,000、Mn of PS fragment = 510,000,

PMMA片段的Mn=500,000、Mn=500,000 of the PMMA fragment,

嵌段共聚物的Mn=1,010,000、Mn of block copolymer=1,010,000,

PS片段与PMMA片段的体积比(PS:PMMA)=54:46、The volume ratio of PS fragments to PMMA fragments (PS:PMMA)=54:46,

分子量分布(Mw/Mn)=1.18,PS片段的Tg=107℃、Molecular weight distribution (Mw/Mn) = 1.18, Tg of PS fragment = 107°C,

PMMA片段的Tg=134℃Tg of PMMA fragment = 134°C

嵌段共聚物中的PS片段及PMMA片段的体积比(PS片段:PMMA片段)以聚苯乙烯的密度为1.05g/cm3,聚甲基丙烯酸甲酯的密度为1.19g/cm3者的形式算出。聚合物片段或聚合物的数量平均分子量(Mn)及重量平均分子量(Mw)使用凝胶渗透层析法(Tosoh(股份有限公司)制造,型号“GPC-8020”,将TSK-GEL SuperH1000、SuperH2000、SuperH3000及SuperH4000串联连接而成者)而测得。聚合物片段的玻璃转移点(Tg)使用示差扫描热量计(Perkin-Elmer公司制造,制品名“DSC7”),一面于0~200℃的温度范围内以20℃/min的升温速度进行升温一面进行测定。聚苯乙烯及聚甲基丙烯酸甲酯的溶解度参数分别为9.0及9.3(参照化学手册应用编改定2版)。The volume ratio of the PS segment and the PMMA segment in the block copolymer (PS segment: PMMA segment) is based on the density of polystyrene being 1.05g/cm 3 and the density of polymethyl methacrylate being 1.19g/cm 3 form calculated. The number average molecular weight (Mn) and weight average molecular weight (Mw) of polymer fragments or polymers were obtained using gel permeation chromatography (manufactured by Tosoh Co., Ltd., model "GPC-8020", TSK-GEL SuperH1000, SuperH2000 , SuperH3000 and SuperH4000 connected in series) and measured. The glass transition point (Tg) of the polymer segment was measured using a differential scanning calorimeter (manufactured by Perkin-Elmer, product name "DSC7"), while the temperature was raised at a rate of 20°C/min in the temperature range of 0 to 200°C. To measure. The solubility parameters of polystyrene and polymethyl methacrylate are 9.0 and 9.3, respectively (refer to the 2nd edition of the Handbook of Chemistry).

向该嵌段共聚物230mg与作为聚环氧乙烷的57.5mg的Aldrich制造的聚乙二醇2050(平均Mn=2050)以总量成为15g的方式添加甲苯而使的溶解,而制备嵌段共聚物溶液。Toluene was added to 230 mg of this block copolymer and 57.5 mg of polyethylene oxide, polyethylene glycol 2050 (average Mn=2050) manufactured by Aldrich, and dissolved so that the total amount became 15 g, and a block was prepared. Copolymer solution.

利用孔径0.5μm的薄膜过滤器对该嵌段共聚物溶液进行过滤而获得嵌段共聚物溶液。将Shin-Etsu Silicones公司制造的KBM-5103 1g、离子交换水1g、乙酸0.1ml、异丙醇19g的混合溶液旋转涂布于玻璃基板上(以旋转速度500rpm进行10秒钟后,接着以800rpm进行45秒钟)。于130℃进行15分钟处理,而获得硅烷偶合处理玻璃。藉由旋转涂布,将所获得的嵌段共聚物溶液以140~160nm的膜厚涂布于作为基材的硅烷偶合处理玻璃上。旋转涂布以旋转速度200rpm进行10秒钟后,接着以300rpm进行30秒钟。The block copolymer solution was obtained by filtering the block copolymer solution with a membrane filter having a pore size of 0.5 μm. Spin-coat a mixed solution of 1 g of KBM-5103 manufactured by Shin-Etsu Silicones, 1 g of ion-exchanged water, 0.1 ml of acetic acid, and 19 g of isopropanol on a glass substrate (after 10 seconds at a rotation speed of 500 rpm, and then at 800 rpm for 45 seconds). The treatment was performed at 130° C. for 15 minutes to obtain a silane-coupling-treated glass. The obtained block copolymer solution was applied to a film thickness of 140 to 160 nm on silane coupling-treated glass as a base material by spin coating. Spin coating was performed at a rotation speed of 200 rpm for 10 seconds, and then at 300 rpm for 30 seconds.

继而,藉由将形成有薄膜的基材于预先充满有氯仿蒸气的干燥器中于室温下静置24小时而实施溶剂退火处理。于干燥器(容量5L)内设置有填充有氯仿100g的螺旋瓶,干燥器内的环境被饱和蒸气压的氯仿所填满。于溶剂退火处理后的薄膜的表面观察到凹凸,而可知构成薄膜的嵌段共聚物发生微层分离。藉由穿透式电子显微镜(TEM)(日立公司制造的H-7100FA)对该薄膜的剖面进行观察,结果可知,PS部分的圆形的剖面于与基板表面平行的方向上相互隔开并且于垂直于基板表面的方向(高度方向)上排列成两段,若与原子力显微镜的解析图像一并进行考察,则PS部分自PMMA部分相分离为水平圆柱结构。PS部分成为核心(岛),PMMA部分为包围PS部分周围的(海)状态。Next, a solvent annealing treatment was performed by allowing the substrate on which the thin film was formed to stand at room temperature for 24 hours in a desiccator previously filled with chloroform vapor. A screw bottle filled with 100 g of chloroform was installed in a desiccator (capacity 5 L), and the atmosphere in the desiccator was filled with chloroform of saturated vapor pressure. Asperities were observed on the surface of the thin film after the solvent annealing treatment, and it was found that microlayer separation occurred in the block copolymer constituting the thin film. The cross-section of the thin film was observed with a transmission electron microscope (TEM) (H-7100FA manufactured by Hitachi Corporation). They are arranged in two stages in the direction (height direction) perpendicular to the substrate surface, and when examined together with the analytical image of the atomic force microscope, the PS part is phase-separated from the PMMA part into a horizontal cylindrical structure. The PS part becomes the core (island), and the PMMA part is in a (sea) state surrounding the PS part.

于藉由上述溶剂退火处理而进行过波形化的薄膜的表面,藉由溅镀而形成作为电流籽晶层的20nm左右的较薄的镍层。继而,将该附带薄膜的基材放入胺基磺酸镍浴中,于温度50℃进行电铸(最大电流密度0.05A/cm2)处理,使镍析出直至厚度成为250μm。自以上述方式获得的镍电铸体将附带薄膜的基材机械剥离。继而,将镍电铸体于四氢呋喃溶剂中浸渍2小时,其后,涂布丙烯酸系UV硬化树脂,使之硬化,进行剥离,将该操作反复3次,藉此将一部分附着于电铸体的表面的聚合物成分去除。其后,浸渍于The Japan Cee-BeeChemical制造的Chemisol 2303中,于50℃搅拌2小时并且进行洗净。其后,对镍电铸体实施10分钟UV臭氧处理。On the surface of the thin film waved by the above-mentioned solvent annealing treatment, a thin nickel layer of about 20 nm is formed as a current seed layer by sputtering. Next, this base material with thin film was placed in a nickel sulfamate bath, and electroforming (maximum current density: 0.05 A/cm 2 ) was performed at a temperature of 50° C. to deposit nickel until the thickness reached 250 μm. The substrate with thin film was mechanically peeled off from the nickel electroform obtained in the above manner. Next, the nickel electroformed body was immersed in a tetrahydrofuran solvent for 2 hours, and then an acrylic UV-curable resin was applied, cured, and peeled off. This operation was repeated 3 times, whereby a part of the electroformed body was attached to the surface of the electroformed body. Surface polymer components are removed. Thereafter, it was immersed in Chemisol 2303 manufactured by The Japan Cee-Bee Chemical, and washed while stirring at 50° C. for 2 hours. Thereafter, UV ozone treatment was performed on the nickel electroformed body for 10 minutes.

继而,将镍电铸体于大金化成品贩卖公司制造的HD-2101TH中浸渍约1分钟,进行干燥后,静置一夜。次日,将镍电铸体浸渍于大金化成品贩卖公司制造的HDTH中,进行约1分钟超音波处理洗净。如此,获得经脱模处理的镍模具。Next, the nickel electroformed body was immersed in HD-2101TH manufactured by Daikin Chemical Sales Co., Ltd. for about 1 minute, dried, and left to stand overnight. On the next day, the nickel electroformed body was dipped in HDTH manufactured by Daikin Chemical Sales Co., Ltd., and cleaned by ultrasonic treatment for about 1 minute. In this way, a demolded nickel mold was obtained.

继而,于PET基板(东洋纺织制造,COSMOSHINE A-4100)上涂布氟系UV硬化性树脂,一面压抵镍模具一面以600mJ/cm2照射紫外线,藉此使氟系UV硬化性树脂硬化。树脂硬化后,将镍模具自硬化的树脂剥离。如此,获得由附带转印有镍模具的表面形状的树脂膜的PET基板所构成的膜状模具。Next, a fluorine-based UV-curable resin was coated on a PET substrate (manufactured by Toyobo Co., Ltd., COSMOSHINE A-4100), and the fluorine-based UV-curable resin was cured by irradiating ultraviolet light at 600 mJ/cm 2 while pressing against a nickel mold. After the resin has hardened, the nickel mold is peeled off from the hardened resin. In this way, a film-shaped mold composed of a PET substrate with a resin film on which the surface shape of the nickel mold was transferred was obtained.

<凹凸构造层的形成><Formation of concavo-convex structure layer>

为了藉由溶胶凝胶法形成凹凸构造层,而以下述方式制备无机材料的前驱物的溶液(溶胶凝胶材料溶液)。向混合乙醇22mol、水5mol、浓盐酸0.004mol及乙酰丙酮4mol而成的液中滴加四乙氧基硅烷(TEOS)0.75mol及二甲基二乙氧基硅烷(DMDES)0.25mol,进而添加作为添加材的界面活性剂S-386(Seimi Chemical制造)0.5wt%,于23℃、湿度45%下搅拌2小时而获得SiO2的前驱物溶液。将该前驱物溶液棒式涂布于基材上而形成前驱物溶液的涂膜。作为基材,使用折射率为1.517(λ=589nm)的100mm×100mm×0.7mm(厚度)的无碱玻璃基板(Nippon Electric Glass公司制造,OA10GF)。使用刮刀(YOSHIMITSU SEIKI公司制造)作为棒式涂布机。该刮刀虽以涂膜的膜厚成为5μm的方式进行了设计,但于刮刀贴附35μm厚度的酰亚胺胶带,以涂膜的膜厚成为40μm的方式进行了调整。In order to form a concavo-convex structure layer by a sol-gel method, a solution of a precursor of an inorganic material (sol-gel material solution) was prepared as follows. Add 0.75 mol of tetraethoxysilane (TEOS) and 0.25 mol of dimethyldiethoxysilane (DMDES) dropwise to a solution obtained by mixing 22 mol of ethanol, 5 mol of water, 0.004 mol of concentrated hydrochloric acid and 4 mol of acetylacetone, and then add Surfactant S-386 (manufactured by Seimi Chemical) 0.5 wt% as an additive was stirred at 23° C. and a humidity of 45% for 2 hours to obtain a SiO 2 precursor solution. The precursor solution is bar-coated on the substrate to form a coating film of the precursor solution. As a substrate, an alkali-free glass substrate (manufactured by Nippon Electric Glass Co., Ltd., OA10GF) having a refractive index of 1.517 (λ=589 nm) of 100 mm×100 mm×0.7 mm (thickness) was used. A doctor blade (manufactured by YOSHIMITSU SEIKI CORPORATION) was used as a bar coater. The doctor blade was designed so that the film thickness of the coating film was 5 μm, but it was adjusted so that the film thickness of the coating film was 40 μm by affixing an imide tape with a thickness of 35 μm to the doctor blade.

将前驱物溶液的涂膜于25℃放置1分钟后,将以上述方式制作的膜状模具重合于涂膜。此时,藉由使加热至80℃的压抵辊于膜状模具上转动移动而将膜状模具压抵于涂膜。其后,剥离膜状模具,继而使用烘箱,于300℃加热60分钟而对涂膜进行正式烧成。如此,于玻璃基板上形成转印有膜状模具的凹凸图案的凹凸构造层。再者,压抵辊内部具有加热器,外周被4mm厚的耐热聚硅氧被覆的辊,且使用辊直径φ为50mm、轴方向长度为350mm者。After the coating film of the precursor solution was left at 25° C. for 1 minute, the film-shaped mold fabricated in the above manner was superimposed on the coating film. At this time, the film mold was pressed against the coating film by rotationally moving a pressure roller heated to 80° C. on the film mold. Thereafter, the film-form mold was peeled off, followed by heating at 300° C. for 60 minutes using an oven, and the coating film was mainly fired. In this way, the concavo-convex structure layer in which the concavo-convex pattern of the film-form mold was transferred was formed on the glass substrate. In addition, the pressure roller has a heater inside, and the outer periphery is coated with heat-resistant silicone with a thickness of 4 mm, and the roll diameter φ is 50 mm and the length in the axial direction is 350 mm.

<凹凸的平均间距的测定><Measurement of average pitch of unevenness>

使用原子力显微镜(Hitachi-hightech股份有限公司制造的附带环境控制单元的扫描式探针显微镜“NanonaviII Station/E-sweep”)对该凹凸构造层的表面的凹凸形状进行测定,而获得凹凸解析图像。测定针对任意10μm见方(长10μm、宽10μm)的测定区域进行。原子力显微镜的解析条件如下所述。The concave-convex shape of the surface of the concave-convex structure layer was measured using an atomic force microscope (scanning probe microscope "NanonaviIII Station/E-sweep" with an environmental control unit manufactured by Hitachi-hightech Co., Ltd.) to obtain a concave-convex analysis image. The measurement is performed on an arbitrary measurement area of 10 μm square (10 μm in length and 10 μm in width). The analysis conditions of the atomic force microscope are as follows.

测定模式:动态力模式(Dynamic Force Mode)Measurement mode: Dynamic Force Mode

悬臂:SI-DF40(材质:Si,杆宽度:40μm,尖梢前端的直径:10nm)Cantilever: SI-DF40 (material: Si, rod width: 40μm, tip diameter: 10nm)

测定环境:大气中Measurement environment: in the atmosphere

测定温度:25℃Measuring temperature: 25°C

对所获得的凹凸解析图像中的任意相邻的凸部彼此或相邻的凹部彼此之间隔100点以上进行测定,算出其平均值而设为凹凸的平均间距。根据该例中所获得的解析图像,凹凸构造层的凹凸图案的凹凸的平均间距如图5的表中所示般为270nm。In the obtained concavo-convex analysis image, the interval between arbitrary adjacent convex portions or adjacent concavity portions was measured at 100 or more points, and the average value thereof was calculated to be the average pitch of concavo-convex. According to the analysis image obtained in this example, the average pitch of the concavities and convexes of the concavo-convex pattern of the concavo-convex structure layer was 270 nm as shown in the table of FIG. 5 .

<雾度值的评价><Evaluation of haze value>

使用Haze-gard plus(BYK-Gardner GmbH公司制造)对形成有凹凸构造层的基材的雾度值(雾度)进行测定。雾度值如图5的表中所示般为0.1%。The haze value (haze) of the substrate on which the concavo-convex structure layer was formed was measured using Haze-gard plus (manufactured by BYK-Gardner GmbH). The haze value was 0.1% as shown in the table of FIG. 5 .

<发光部的形成><Formation of light emitting part>

继而于凹凸构造层上利用溅镀法以厚度120nm将ITO成膜,继而,利用蒸镀法,分别积层作为有机层的电洞传输层(4,4',4”三(9-咔唑)三苯胺,厚度:35nm)、发光层(掺杂有三(2-苯基吡啶)铱(III)错合物的4,4',4”三(9-咔唑)三苯胺,厚度15nm;掺杂有三(2-苯基吡啶)铱(III)错合物的1,3,5-三(N-苯基苯并咪唑-2-基)苯,厚度15nm)、电子传输层(1,3,5-三(N-苯基苯并咪唑-2-基)苯,厚度:65nm)。进而,蒸镀氟化锂层(厚度:1nm)、铝层(厚度:50nm)、银层(厚度:15nm)。Then, ITO was formed into a film with a thickness of 120nm by sputtering on the concave-convex structure layer, and then, the hole transport layer (4, 4', 4" tris(9-carbazole ) triphenylamine, thickness: 35nm), light-emitting layer (4,4',4"tris(9-carbazole) triphenylamine doped with tris(2-phenylpyridine)iridium(III) complex, thickness 15nm; 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene doped with tris(2-phenylpyridine)iridium(III) complex, thickness 15nm), electron transport layer (1, 3,5-tris(N-phenylbenzimidazol-2-yl)benzene, thickness: 65 nm). Furthermore, a lithium fluoride layer (thickness: 1 nm), an aluminum layer (thickness: 50 nm), and a silver layer (thickness: 15 nm) were evaporated.

实施例2Example 2

使用如下述的由PS与PMMA所构成的Polymer Source公司制造的嵌段共聚物而制作膜状模具,除此以外,以与实施例1相同的方式制作发光元件。A light-emitting element was produced in the same manner as in Example 1 except that a film-shaped mold was produced using a block copolymer made of Polymer Source, which is composed of PS and PMMA as described below.

PS片段的Mn=800,000、Mn of PS fragment=800,000,

PMMA片段的Mn=750,000、Mn=750,000 of the PMMA fragment,

嵌段共聚物的Mn=1,550,000、Mn of block copolymer=1,550,000,

PS片段与PMMA片段的体积比(PS:PMMA)=55:45、The volume ratio of PS fragments to PMMA fragments (PS:PMMA)=55:45,

分子量分布(Mw/Mn)=1.28,PS片段的Tg=107℃、Molecular weight distribution (Mw/Mn) = 1.28, Tg of PS fragment = 107°C,

PMMA片段的Tg=134℃Tg of PMMA fragment = 134°C

如图5的表中所示般,凹凸构造层的凹凸图案的凹凸的平均间距为590nm。又,形成有凹凸构造层的基材的雾度值为1.5%。As shown in the table of FIG. 5 , the average pitch of the concavities and convexes of the concavo-convex pattern of the concavo-convex structure layer was 590 nm. In addition, the haze value of the base material on which the concavo-convex structure layer was formed was 1.5%.

比较例1Comparative example 1

不形成凹凸构造层,于基材上直接形成透明电极,除此以外,以与实施例1相同的方式制作发光元件。如图5的表中所示般,未形成凹凸构造层的基材的雾度值为0.0%。A light-emitting element was fabricated in the same manner as in Example 1, except that a transparent electrode was directly formed on the substrate without forming a concavo-convex structure layer. As shown in the table of FIG. 5 , the haze value of the base material on which no concavo-convex structure layer was formed was 0.0%.

比较例2Comparative example 2

使用如下述的由PS与PMMA所构成的Polymer Source公司制造的嵌段共聚物而制作膜状模具,除此以外,以与实施例1相同的方式制作发光元件。A light-emitting element was produced in the same manner as in Example 1 except that a film-shaped mold was produced using a block copolymer made of Polymer Source, which is composed of PS and PMMA as described below.

PS片段的Mn=900,000、Mn of PS fragment=900,000,

PMMA片段的Mn=800,000、Mn=800,000 of the PMMA fragment,

嵌段共聚物的Mn=1,700,000、Mn of block copolymer=1,700,000,

PS片段与PMMA片段的体积比(PS:PMMA)=55:45、The volume ratio of PS fragments to PMMA fragments (PS:PMMA)=55:45,

分子量分布(Mw/Mn)=1.26,PS片段的Tg=107℃、Molecular weight distribution (Mw/Mn) = 1.26, Tg of PS fragment = 107°C,

PMMA片段的Tg=134℃Tg of PMMA fragment = 134°C

如图5的表中所示般,凹凸构造层的凹凸图案的凹凸的平均间距为770nm。又,形成有凹凸构造层的基材的雾度值为7.9%。As shown in the table of FIG. 5 , the average pitch of the concavities and convexes of the concavo-convex pattern of the concavo-convex structure layer was 770 nm. Also, the haze value of the base material on which the uneven structure layer was formed was 7.9%.

比较例3Comparative example 3

于附带任意地埋入有直径数μm~20μm的微粒子的散射膜(KIMOTO股份有限公司制造)的毛坯玻璃基板上形成透明电极,除此以外,以与实施例1相同的方式制作发光元件。A light-emitting element was produced in the same manner as in Example 1 except that a transparent electrode was formed on a green glass substrate with a scattering film (manufactured by KIMOTO Co., Ltd.) in which fine particles with a diameter of several μm to 20 μm were optionally embedded.

如图5的表中所示般,附带散射膜的毛坯玻璃基板的凹凸的平均间距为8000nm。又,附带散射膜的毛坯玻璃基板的雾度值为90.5%。As shown in the table of FIG. 5 , the average pitch of the asperities of the green glass substrate with the scattering film was 8000 nm. Also, the haze value of the green glass substrate with the scattering film was 90.5%.

<发光效率的评价><Evaluation of Luminous Efficiency>

利用以下的方法对实施例1、2及比较例1~3的发光元件的发光效率(功率效率)进行测定。向发光元件施加电压,利用施加测定器(ADC股份有限公司制造,R6244)对施加电压V及流过发光元件的电流I进行测定,又,利用Spectra Co-op公司制造的总光通量测定装置对总光通量L进行测定。根据以上述方式获得的施加电压V、电流I及总光通量L的测定值算出亮度值L',使用下述计算式(F1):The luminous efficiencies (power efficiencies) of the light-emitting elements of Examples 1 and 2 and Comparative Examples 1 to 3 were measured by the following method. A voltage was applied to the light-emitting element, and the applied voltage V and the current I flowing through the light-emitting element were measured with an application measuring device (manufactured by ADC Co., Ltd., R6244). The luminous flux L is measured. Calculate the luminance value L' based on the measured values of the applied voltage V, current I and total luminous flux L obtained in the above manner, using the following calculation formula (F1):

功率效率=(L'/I/V)×S (F1)Power efficiency=(L'/I/V)×S (F1)

而算出发光元件的功率效率。于上述式中,S为元件的发光面积。再者,关于亮度L'的值,假设发光元件的配光特性遵从朗伯(Lambert)法则,使用下述计算式(F2):And calculate the power efficiency of the light emitting element. In the above formula, S is the light emitting area of the device. Furthermore, regarding the value of the luminance L', assuming that the light distribution characteristic of the light-emitting element complies with Lambert's law, the following calculation formula (F2) is used:

L'=L/π/S (F2)L'=L/π/S (F2)

进行换算。Do the conversion.

将功率效率的算出结果示于图5的表中。与不包括凹凸构造层的比较例1的发光元件相比,实施例1、2及比较例2、3的发光元件的功率效率较高。认为其原因在于:于实施例1、2及比较例2、3的发光元件中,发光层中所产生的光藉由凹凸构造层或散射膜而进行绕射及/或散射,而自元件内部被提取。The calculated results of the power efficiency are shown in the table of FIG. 5 . The power efficiency of the light-emitting elements of Examples 1 and 2 and Comparative Examples 2 and 3 was higher than that of the light-emitting element of Comparative Example 1 which did not include a concavo-convex structure layer. The reason for this is considered to be that in the light-emitting elements of Examples 1 and 2 and Comparative Examples 2 and 3, the light generated in the light-emitting layer is diffracted and/or scattered by the concave-convex structure layer or the scattering film, and is emitted from the inside of the element. is extracted.

<目视评价><Visual evaluation>

以下述方式对实施例1、2及比较例1~3的发光元件的透明性进行评价。准备以10磅的字体尺寸的“Arial”字体印刷有字母的纸,于观察者与纸之间设置所制作的发光元件。观察者与发光元件之间的距离设为1m。一面改变发光元件与纸之间的距离,一面观察者穿透发光元件于纸上对焦并利用数位相机拍摄照片,利用目视观看照片的文字。将结果示于图5的表中。于图5的表中,将即便发光元件与纸之间的距离为5m以上,亦可清楚地看明白文字者记载为◎;将即便发光元件与纸之间的距离为5m以上,亦可看明白文字,但对比度较低者记载为○;将于发光元件与纸之间的距离未达5m的情形时,可看明白文字,但于发光元件与纸之间的距离为5m以上的情形时,无法看明白文字者记载为Δ;将即便发光元件与纸之间的距离未达5m,亦完全无法看明白文字者记载为×。The transparency of the light-emitting elements of Examples 1 and 2 and Comparative Examples 1 to 3 was evaluated in the following manner. Paper on which letters were printed in "Arial" at a font size of 10 points was prepared, and the produced light-emitting element was placed between the observer and the paper. The distance between the observer and the light emitting element was set to 1 m. While changing the distance between the light-emitting element and the paper, the observer penetrates the light-emitting element to focus on the paper and take a photo with a digital camera, and visually observe the text of the photo. The results are shown in the table of FIG. 5 . In the table of Fig. 5, the characters that can be clearly read even if the distance between the light emitting element and the paper is 5 m or more are described as ◎; even if the distance between the light emitting element and the paper is 5 m or more, the characters If the text is clear but the contrast is low, it will be marked as ○; when the distance between the light-emitting element and the paper is less than 5m, the text can be read clearly, but when the distance between the light-emitting element and the paper is more than 5m , those who could not read the characters were recorded as Δ; those who could not read the characters at all even if the distance between the light-emitting element and the paper was less than 5 m were recorded as ×.

于实施例1及比较例1的发光元件中,关于形成有凹凸构造层的区域,包括形成有金属电极的区域在内全部透明,即便发光元件与纸之间的距离为5m以上,亦可清楚地看明白文字。关于比较例1的发光元件,由于不具有凹凸构造层而未将穿透发光元件的光进行散射,故而认为其透明且文字的可读性较高。关于实施例1的发光元件,由于凹凸构造层的凹凸图案的凹凸的平均间距处于150~650nm的范围内、尤其是250~300nm的范围内,而穿透发光元件的光的散射受到抑制,故而认为其透明且文字的可读性较高。认为穿透性得到维持。In the light-emitting elements of Example 1 and Comparative Example 1, the area where the concave-convex structure layer was formed, including the area where the metal electrode was formed, was completely transparent, and even if the distance between the light-emitting element and the paper was 5 m or more, it was clear understand the text clearly. The light-emitting element of Comparative Example 1 is considered to be transparent and have high character readability because it does not have the concavo-convex structure layer and does not scatter the light passing through the light-emitting element. Regarding the light-emitting element of Example 1, since the average pitch of the concavities and convexities of the concavo-convex pattern of the concavo-convex structure layer is in the range of 150 to 650 nm, especially in the range of 250 to 300 nm, the scattering of light passing through the light emitting element is suppressed, so It is considered transparent and the text is more readable. Penetration is believed to be maintained.

于实施例2的发光元件中,关于形成有凹凸构造层的区域,包括形成有金属电极的区域在内全部透明,即便发光元件与纸之间的距离为5m以上,亦可清楚地看明白文字。关于实施例2的发光元件,由于凹凸构造层的凹凸图案的凹凸的平均间距处于150~650nm的范围内,而穿透发光元件的光的散射受到抑制,故而认为其透明且文字的可读性较高。然而,通过该发光元件而目视到的文字的对比度较通过实施例1及比较例1的发光元件而目视到的情形略低。In the light-emitting element of Example 2, the area where the concave-convex structure layer is formed, including the area where the metal electrode is formed, is completely transparent, and characters can be clearly read even if the distance between the light-emitting element and the paper is 5 m or more. . Regarding the light-emitting element of Example 2, since the average pitch of the concavities and convexities of the concavo-convex pattern of the concavo-convex structure layer is in the range of 150 to 650 nm, and the scattering of light penetrating the light-emitting element is suppressed, it is considered to be transparent and readable. higher. However, the contrast of the characters visually observed through this light-emitting element was slightly lower than that observed through the light-emitting elements of Example 1 and Comparative Example 1.

于比较例2的发光元件中,关于形成有凹凸构造层的区域,包括形成有金属电极的区域在内全部透明,若发光元件与纸之间的距离未达5m,则可看明白文字。然而,于发光元件与纸之间的距离为5m以上的情形时,无法模糊地看明白文字。关于比较例2的发光元件,由于凹凸构造层的凹凸图案的凹凸的平均间距超过650nm,故而认为穿透发光元件的光的散射较大,而透明性变得不充分。In the light-emitting device of Comparative Example 2, the area where the concave-convex structure layer was formed, including the area where the metal electrode was formed, was completely transparent. If the distance between the light-emitting device and the paper was less than 5 m, characters could be read clearly. However, when the distance between the light-emitting element and the paper was 5 m or more, characters could not be read clearly. In the light-emitting element of Comparative Example 2, since the average pitch of the concavo-convex patterns of the concavo-convex structure layer exceeds 650 nm, light passing through the light-emitting element is considered to be largely scattered and have insufficient transparency.

于比较例3的发光元件中,关于形成有凹凸构造层的区域,包括形成有金属电极的区域在内全部不透明,即便发光元件与纸之间的距离未达5m、进而未达1m,亦完全无法看明白文字。由于比较例3的发光元件所使用的附带散射膜的毛坯玻璃基板的凹凸的平均间距远远大于650nm,故而认为穿透发光元件的光的散射较大,而发光元件看起来不透明。In the light-emitting element of Comparative Example 3, the area where the concave-convex structure layer was formed, including the area where the metal electrode was formed, was completely opaque. Can't understand text. Since the rough glass substrate with a scattering film used in the light-emitting element of Comparative Example 3 has an average pitch of concavities and convexities much larger than 650 nm, light passing through the light-emitting element is considered to be scattered greatly, and the light-emitting element appears opaque.

根据以上的结果可知,形成有具有凹凸的平均间距为150~650nm的凹凸图案的凹凸构造层的基材雾度值为2.0%以下,使用此种基材而制作的发光元件透明并且功率效率较高。From the above results, it can be seen that the haze value of the base material of the concave-convex structure layer formed with the concave-convex structure layer with the average pitch of the concave-convex structure being 150-650 nm is 2.0% or less, and the light-emitting element produced using this substrate is transparent and has high power efficiency. high.

以上,虽藉由实施例及比较例对本发明进行了说明,但本发明的发光元件并不限定于上述实施例,可于申请专利范围所记载的技术思想的范围内适当进行改变。Although the present invention has been described above with examples and comparative examples, the light-emitting element of the present invention is not limited to the above examples, and can be appropriately modified within the scope of the technical ideas described in the claims.

[产业上的可利用性][industrial availability]

本发明的发光元件为透明型并且发光效率较高。此种发光元件可用于建筑物的窗口材料或照明装置、车载的照明装置、透明显示器等各种用途。The light-emitting element of the present invention is transparent and has high luminous efficiency. Such a light-emitting device can be used in various applications such as window materials and lighting devices for buildings, vehicle-mounted lighting devices, and transparent displays.

Claims (7)

1.一种透明(See-through)型发光元件,其具备:1. A transparent (See-through) light-emitting element, which has: 绕射光栅基板,其于基材的一面上形成有具有凹凸图案的凹凸构造层;Diffraction grating substrate, which has a concavo-convex structure layer with concavo-convex patterns formed on one side of the substrate; 第1电极;1st electrode; 有机层;及an organic layer; and 第2电极;且the second electrode; and 上述第1电极、上述有机层及上述第2电极依序形成于上述凹凸构造层上,The first electrode, the organic layer, and the second electrode are sequentially formed on the concave-convex structure layer, 上述凹凸图案的凹凸的平均间距为150~650nm的范围内。The average pitch of the concavities and convexes of the above-mentioned concavo-convex pattern is in the range of 150-650 nm. 2.如权利要求1的透明型发光元件,其中,上述绕射光栅基板的雾度值为2.0%以下。2. The transparent light-emitting device according to claim 1, wherein the haze value of the diffraction grating substrate is 2.0% or less. 3.如权利要求1或2的透明型发光元件,其中,上述凹凸图案的凸部的延伸方向于俯视下不规则地分布,且3. The transparent light-emitting element according to claim 1 or 2, wherein the extension direction of the protrusions of the concave-convex pattern is irregularly distributed in plan view, and 上述凹凸图案的每单位面积的区域所包含的上述凸部于俯视下的轮廓线包含较曲线区间多的直线区间。The outline of the convex portion included in the area per unit area of the concave-convex pattern in a plan view includes more linear sections than curved sections. 4.如权利要求3的透明型发光元件,其中,于俯视下与上述凸部的延伸方向大致正交的方向上的上述凸部的宽度一定。4. The transparent light-emitting element according to claim 3, wherein the width of the protrusion is constant in a direction substantially perpendicular to the direction in which the protrusion extends in plan view. 5.如权利要求3或4的透明型发光元件,其中,上述曲线区间是如下区间:于藉由以上述凸部的宽度的平均值的π(圆周率)倍的长度划分上述凸部于俯视下的轮廓线而形成多个区间的情形时,区间的两端点间的直线距离相对于该两端点间的上述轮廓线的长度的比成为0.75以下;5. The transparent light-emitting element according to claim 3 or 4, wherein the above-mentioned curve interval is an interval in which the above-mentioned convex portion is divided by a length that is π (pi) times the average value of the width of the above-mentioned convex portion in plan view. When a plurality of sections are formed by the outline of the section, the ratio of the straight-line distance between the two ends of the section to the length of the above-mentioned outline between the two ends is 0.75 or less; 上述直线区间是上述多个区间中并非上述曲线区间的区间。The linear section is a section other than the curved section among the plurality of sections. 6.如权利要求3或4的透明型发光元件,其中,上述曲线区间是如下区间:于藉由以上述凸部的宽度的平均值的π(圆周率)倍的长度划分上述凸部于俯视下的轮廓线而形成多个区间的情形时,连结区间的一端及该区间的中点的线段、与连结该区间的另一端及该区间的中点的线段所成的2个角度中,成为180°以下者其角度为120°以下;6. The transparent light-emitting element according to claim 3 or 4, wherein the above-mentioned curve interval is an interval in which the above-mentioned convex portion is divided by a length that is π (circumference ratio) times the average value of the width of the above-mentioned convex portion in plan view When multiple sections are formed by the outline of the section, the angle between the line segment connecting one end of the section and the midpoint of the section and the line segment connecting the other end of the section and the midpoint of the section is 180 If the angle is less than 120°, the angle is less than 120°; 上述直线区间是上述多个区间中并非上述曲线区间的区间,The above-mentioned linear section is an interval that is not the above-mentioned curved section among the above-mentioned plurality of sections, 上述多个区间中上述直线区间的比率为70%以上。The ratio of the linear section among the plurality of sections is 70% or more. 7.如权利要求1至6中任一项的透明型发光元件,其中,藉由对利用扫描式探针显微镜解析上述凹凸图案而获得的凹凸解析图像实施二维高速傅立叶变换处理而获得的傅立叶变换像,显现以波数的绝对值为0μm-1的原点为大致中心的圆状或圆环状的花样,且上述圆状或圆环状的花样存在于波数的绝对值成为1.54~6.67μm-1的范围内的区域内。7. The transparent light-emitting element according to any one of claims 1 to 6, wherein the Fourier transform obtained by performing two-dimensional high-speed Fourier transform processing on the concave-convex analysis image obtained by analyzing the concave-convex pattern with a scanning probe microscope The converted image shows a circular or annular pattern approximately centered on the origin with an absolute value of wave number 0 μm -1 , and the circular or annular pattern exists when the absolute value of wave number is 1.54 to 6.67 μm - 1 within the area within the range.
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