CN107579730A - A kind of fully integrated single-pole double-throw switch (SPDT) circuit - Google Patents
A kind of fully integrated single-pole double-throw switch (SPDT) circuit Download PDFInfo
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- CN107579730A CN107579730A CN201710841658.9A CN201710841658A CN107579730A CN 107579730 A CN107579730 A CN 107579730A CN 201710841658 A CN201710841658 A CN 201710841658A CN 107579730 A CN107579730 A CN 107579730A
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- 238000002955 isolation Methods 0.000 abstract description 18
- 230000008901 benefit Effects 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 238000010276 construction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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Abstract
The invention discloses a kind of fully integrated single-pole double-throw switch (SPDT) circuit, including resonant capacitance C, transmitting branch and receiving branch, first antenna port, emission port TX and control signal port Ctrl are set on the road of the transmitting, second antenna port, receiving port RX and control signal port Ctrl_NOT are set on the road of the reception, first antenna port and the second antenna port are all connected with antenna ANT, control signal port Ctrl and control signal port Ctrl_NOT and export opposite control signal；Resonant capacitance C one end ground connection, other end connection antenna ANT.The present invention has high power capacity, high-isolation and low-loss advantage by foregoing circuit.
Description
Technical field
The present invention relates to a kind of single-pole double-throw switch (SPDT)（SPDT）, and in particular to a kind of fully integrated single-pole double-throw switch (SPDT) circuit.
Background technology
In CMOS technology, silicon-based semiconductor has the features such as low electron mobility, resistance substrate rate is small, therefore CMOS is mono-
Double-pole double throw switch is small there is power capacity, and isolation is inadequate, and the features such as big is lost, and is particularly difficult to realize high-power appearance simultaneously
Amount and low-loss and high-isolation.BiCMOS（Bipolar CMOS）It is CMOS and bipolar device while is integrated in same chip
On technology, its basic thought be using cmos device as main element circuit, and require drive bulky capacitor load in place of add
Bipolar device or circuit.
The performance of one single-pole double-throw switch (SPDT) will be weighed by three indexs：Power capacity（It can be transmitted most during transmitting
It is high-power）, loss（When transmitting is with receiving, the loss of the signal power as caused by single-pole double-throw switch (SPDT)）, isolation（Send with
During reception, the degree of isolation of transmitting terminal and receiving terminal）.In the case of selected single-pole double-throw switch (SPDT), the power capacity of switch is determined
Whole radio system maximum transmission power is determined, loss reflects switch caused signal power losses in signal chains, isolation
Degree reflects transmitting terminal and receiving terminal and influenced each other degree, and isolation is higher, and influencing each other for both ends is weaker.Existing hilted broadsword
The defects of power capacity is low, isolation is low and loss is high be present in commutator.
The content of the invention
The technical problems to be solved by the invention be allow single-pole double-throw switch (SPDT) circuit have high power capacity, high-isolation and
Low-loss advantage, and it is an object of the present invention to provide a kind of fully integrated single-pole double-throw switch (SPDT) circuit, the circuit have high power capacity, it is high every
From degree and low-loss advantage.
The present invention is achieved through the following technical solutions：
A kind of fully integrated single-pole double-throw switch (SPDT) circuit, including resonant capacitance C, transmitting branch and receiving branch, the road of the transmitting
It is upper that first antenna port, emission port TX and control signal port Ctrl are set, the second antenna end is set on the road of the reception
Mouth, receiving port RX and control signal port Ctrl_NOT, first antenna port and the second antenna port are all connected with antenna ANT,
Control signal port Ctrl and control signal port Ctrl_NOT exports opposite control signal；The resonant capacitance C mono- is terminated
Ground, other end connection antenna ANT.The present invention is simple using circuit structure, and circuit area is small, and cost is low, dependable performance.In circuit
In employ resonant capacitance C to ground, i.e., antenna port with port be connected resonant capacitance C so that resonant capacitance C is in every kind of work
Make the inductance in parallel resonance all with a branch road under state, it is achieved thereby that the selection to working frequency range and reducing loss.
Ground port is connected to using transistor M1, M2, in transmitting, M1 is closed, M2 is opened, and M1 is opened during reception, M2 is closed,
So that the isolation of transmitting terminal and receiving terminal greatly increases.
Series-shunt structures are used between transmitting branch and receiving branch in the circuit, i.e. string and structure, circuit
Simple in construction, circuit area is few, and electronic component is few so that whole single-pole double-throw switch (SPDT) circuit reduces loss, improves work(
Rate capacity.The functions such as the circuit realiration high power capacity, low-loss, high-isolation.
Preferably, the transmitting branch includes transistor M1, inductance L1 and resistance R1, transistor M1 base stage connection resistance
R1 one end, the resistance R1 other end connection control signals port Ctrl, transistor M1 emitter stage and body ends ground connection；Transistor M1
Colelctor electrode connection inductance L1 one end, inductance L1 other ends connection antenna port, transistor M1 colelctor electrode is also connected with transmitting terminal
Mouth TX.
Preferably, the receiving branch includes transistor M2, inductance L2 and resistance R2, transistor M2 base stage connection resistance
R2 one end, the resistance R2 other end connection control signals port Ctrl_NOT, transistor M2 emitter stage and body ends are directly grounded,
Transistor M2 colelctor electrode connection inductance L2 one end, inductance L2 other ends connection antenna port, transistor M2 colelctor electrode also connect
Meet receiving port RX.
Preferably, when transmitting a signal, control signal port Ctrl be high level, control signal port Ctrl_NOT be low
Level, transistor M1 are opened, and transistor M2 is closed, the parasitic capacitance and inductance L1 carried on resonant capacitance C, transistor M1, shape
Into series resonant network.
Preferably, when a signal is received, control signal port Ctrl be low level, control signal port Ctrl_NOT be high
Level, transistor M2 are opened, and M1 is closed, and the parasitic capacitance and inductance L2 carried on resonant capacitance C, transistor M2, are formed in parallel
Resonant network.
The present invention proposes a kind of ground capacitor resonance technology, and in transmission signal, connection antenna port arrives with ground port
Ground resonant capacitance, transistor M1 parasitic capacitance and inductance L1 form series resonant network, and the characteristic of high impedance is presented, reduces
The radiofrequency signal of transmitting, to inductance L1, transistor M1 leakage, loss is sent so as to reduce in antenna port；In reception signal
When, antenna port and the parasitic capacitance and inductance L2 to ground resonant capacitance C, transistor M2 of ground port are connected, is formed in parallel humorous
Vibrating network, the characteristic of high impedance is presented, reduces the radiofrequency signal of transmitting in antenna port to inductance L2, transistor M2's lets out
Dew, so as to reduce receiving loss.The single-pole double-throw switch (SPDT) of the present embodiment sends loss of signal and Signal segregation degree during with receiving
It is superior to prior art.
Preferably, change the size of resonant capacitance C values, the resonant frequency of series resonant network can be changed.
Preferably, change the size of inductance L1 and inductance L2 values, the resonant frequency of series resonant network can be changed.
Preferably, the resonant frequency of series resonant network can be changed by changing transistor M1 and transistor M2 size.
BiCMOS（Bipolar CMOS）The technology for being CMOS and bipolar device while being integrated on same chip, its base
This thought is using cmos device as main element circuit, and adds bipolar device or electricity in place of requiring to drive bulky capacitor load
Road.Therefore BiCMOS circuits both have the advantages of cmos circuit high integration, low-power consumption, obtain bipolar circuit again at a high speed, by force
The advantage of current driving ability.The circuit forms using BiCMOS technique is integrated.
Emission port TX is signal stream inbound port, and receiving port RX is signal stream exit port.
The present invention compared with prior art, has the following advantages and advantages：
1st, the present invention uses capacitor resonance technology, and resonant capacitance C is grounded, i.e., is connected resonant capacitance with ground port in antenna port
C so that inductance in parallel resonance of the resonant capacitance C under every kind of working condition all with a branch road, it is achieved thereby that to work frequency
Section selection and reduce loss.
2nd, the present invention is connected to ground port using transistor M1, M2, and in transmitting, M1 is closed, M2 unlatchings, and M1 is opened during reception
Open, M2 is closed so that the isolation of transmitting terminal and receiving terminal greatly increases.
3rd, the present invention uses modified series-shunt structures, and original transistor is instead of with inductance L1, L2, and with
To ground capacitor resonance so that whole single-pole double-throw switch (SPDT) reduces loss, realizes high power capacity, low-loss, high-isolation etc.
Function.
4th, circuit structure of the present invention is simple, and circuit area is small, and cost is low, dependable performance.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention.In the accompanying drawings：
Fig. 1 is the circuit diagram of the present invention；
Fig. 2 is the single-pole double-throw switch (SPDT) power capacity simulation result figure of the present invention；
Fig. 3 is that the single-pole double-throw switch (SPDT) of the present invention sends the simulation result figure of loss of signal during with receiving.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, with reference to embodiment and accompanying drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation are only used for explaining the present invention, do not make
For limitation of the invention.
Embodiment 1：
As Figure 1-3, the present invention includes a kind of fully integrated single-pole double-throw switch (SPDT) circuit, including resonant capacitance C, transmitting branch and
Receiving branch, first antenna port, emission port TX and control signal port Ctrl, the reception are set on the road of the transmitting
Road on the second antenna port, receiving port RX and control signal port Ctrl_NOT be set, first antenna port and second day
Line end mouth is all connected with antenna ANT, control signal port Ctrl and control signal port Ctrl_NOT and exports opposite control signal；
Resonant capacitance C one end ground connection, other end connection antenna ANT.Center operating frequency is adjusted to 35GHz in the present embodiment.
As shown in Figure 2, the single-pole double-throw switch (SPDT) power capacity of embodiment is more than 12dBm, holds much larger than existing single-pole double-throw switch (SPDT) power
Amount.
The present invention is simple using circuit structure, and circuit area is small, and cost is low, dependable performance.Resonance is employed in circuit
Electric capacity C to ground, i.e., antenna port with port be connected resonant capacitance C so that resonant capacitance C under every kind of working condition all with
The inductance in parallel resonance of one branch road, it is achieved thereby that selection to working frequency range and reducing loss.
Ground port is connected to using transistor M1, M2, in transmitting, M1 is closed, M2 is opened, and M1 is opened during reception, M2 is closed,
So that the isolation of transmitting terminal and receiving terminal greatly increases.
Series-shunt structures are used between transmitting branch and receiving branch in the circuit, i.e. string and structure, circuit
Simple in construction, circuit area is few, and electronic component is few so that whole single-pole double-throw switch (SPDT) circuit reduces loss, improves work(
Rate capacity.The functions such as the circuit realiration high power capacity, low-loss, high-isolation.
Embodiment 2：
As shown in figure 3, the present embodiment is preferably as follows on the basis of embodiment 1：Transmitting branch include transistor M1, inductance L1 and
Resistance R1, transistor M1 base stage connection resistance R1 one end, the resistance R1 other end connection control signals port Ctrl, transistor M1
Emitter stage and body ends ground connection；Transistor M1 colelctor electrode connection inductance L1 one end, inductance L1 other ends connection antenna port,
Transistor M1 colelctor electrode is also connected with emission port TX.Body ends therein are semiconductor end.
Receiving branch includes transistor M2, inductance L2 and resistance R2, transistor M2 base stage connection resistance R2 one end, resistance
The R2 other end connection control signals port Ctrl_NOT, transistor M2 emitter stage and body ends are directly grounded, transistor M2's
Colelctor electrode connection inductance L2 one end, inductance L2 other ends connection antenna port, transistor M2 colelctor electrode are also connected with receiving port
RX.The present invention uses modified series-shunt structures, and original transistor is instead of with inductance L1, L2, and with it is humorous to ground
Shake electric capacity C resonance so that whole single-pole double-throw switch (SPDT) circuit reduces loss, realizes high power capacity, low-loss, high-isolation
Etc. function.
When transmitting a signal, control signal port Ctrl be high level, control signal port Ctrl_NOT be low level, it is brilliant
Body pipe M1 is opened, and transistor M2 is closed, the parasitic capacitance and inductance L1 carried on resonant capacitance C, transistor M1, is formed in parallel humorous
Vibrating network, the characteristic of high impedance is presented, transmission signal is reduced in leakage of the antenna port to transistor M1, so as to reduce
Transmitting branch sends loss during signal.
When a signal is received, control signal port Ctrl be low level, control signal port Ctrl_NOT be high level, it is brilliant
Body pipe M2 is opened, and M1 is closed, and the parasitic capacitance and inductance L2 carried on resonant capacitance C, transistor M2, forms parallel resonance net
Network, the characteristic of high impedance is presented, the radiofrequency signal of transmitting is reduced in leakage of the antenna port to transistor M2, so as to reduce
Receive loss.
When control signal port, Ctrl is low level, control signal port Ctrl_NOT is when being high level, and transistor M2 is opened
Open, M1 is closed, and switch is in transmission state, and signal is transferred to antenna port from emission port, now requires single-pole double-throw switch (SPDT)
Power signals as much as possible.Transistor M1 is closed to prevent radiofrequency signal from revealing.Transistor M2 is opened, and its base stage is biased
To high level so that transmitting terminal is grounded by M2 so that the isolation increase of transmitting terminal to receiving terminal.It is humorous when sending signal
The inductance of electric capacity and transmitting branch of shaking forms series resonant network, leakage of the radiofrequency signal to receiving branch is reduced, so as to reduce
Transmitting branch sends loss during signal.
When Ctrl is high level, Ctrl_NOT is low level, transistor M1 is opened, and M2 is closed, and switch is in receiving shape
State, signal now require that single-pole double-throw switch (SPDT) isolates power signal as much as possible from transmission antenna port to receiving port.Crystal
Pipe M2 is closed to prevent radiofrequency signal from revealing.Transistor M1 is opened, and its base stage is biased to high level so that emission port passes through
M1 is grounded, to prevent antenna port from thinking that transmitting branch is revealed.In reception signal, the inductance of resonant capacitance and transmitting branch is formed
Series resonant network, leakage of the radiofrequency signal to transmitting branch is reduced, so as to reduce loss during receiving branch reception signal.
The present invention proposes a kind of ground capacitor resonance technology, and in transmission signal, connection antenna port arrives with ground port
Ground resonant capacitance, transistor M1 parasitic capacitance and inductance L1 form series resonant network, and the characteristic of high impedance is presented, reduces
The radiofrequency signal of transmitting, to inductance L1, transistor M1 leakage, loss is sent so as to reduce in antenna port；In reception signal
When, antenna port and the parasitic capacitance and inductance L2 to ground resonant capacitance C, transistor M2 of ground port are connected, is formed in parallel humorous
Vibrating network, the characteristic of high impedance is presented, reduces the radiofrequency signal of transmitting in antenna port to inductance L2, transistor M2's lets out
Dew, so as to reduce receiving loss.The single-pole double-throw switch (SPDT) of the present embodiment sends loss of signal bottom and signal isolation during with receiving
Degree is high, is superior to prior art.
Embodiment 3：
The present embodiment is preferably as follows on the basis of above-described embodiment：Change the size of resonant capacitance C values, can change in parallel humorous
The resonant frequency of vibrating network.
Change the size of inductance L1 and inductance L2 values, the resonant frequency of series resonant network can be changed.
The resonant frequency of series resonant network can be changed by changing transistor M1 and transistor M2 size.
Resonant capacitance C and inductance L1, L2 that can be by regulation connection antenna and to ground size, transistor M1, M2's
Size changes the resonant frequency of series resonant network, so as to realizing frequency-selecting function.
The circuit forms using BiCMOS technique is integrated.BiCMOS（Bipolar CMOS）Be CMOS and bipolar device simultaneously
The technology being integrated on same chip, its basic thought are using cmos device as main element circuit, and are requiring that driving is big
Bipolar device or circuit are added in place of capacitive load.Therefore BiCMOS circuits both have cmos circuit high integration, low-power consumption
Advantage, bipolar circuit high speed, the advantage of strong current drive ability are obtained again.
Emission port TX is signal stream inbound port, and receiving port RX is signal stream exit port.
Above-described embodiment, the purpose of the present invention, technical scheme and beneficial effect are carried out further
Describe in detail, should be understood that the embodiment that the foregoing is only the present invention, be not intended to limit the present invention
Protection domain, within the spirit and principles of the invention, any modification, equivalent substitution and improvements done etc., all should include
Within protection scope of the present invention.
Claims (10)
- A kind of 1. fully integrated single-pole double-throw switch (SPDT) circuit, it is characterised in that including resonant capacitance C, transmitting branch and receiving branch, First antenna port, emission port TX and control signal port Ctrl, the Lu Shangshe of the reception are set on the road of the transmitting The second antenna port, receiving port RX and control signal port Ctrl_NOT are put, first antenna port and the second antenna port are equal Connect antenna ANT, control signal port Ctrl and control signal port Ctrl_NOT and export opposite control signal；The resonance Electric capacity C one end is grounded, other end connection antenna ANT.
- A kind of 2. fully integrated single-pole double-throw switch (SPDT) circuit according to claim 1, it is characterised in that the transmitting branch bag Include transistor M1, inductance L1 and resistance R1, transistor M1 base stage connection resistance R1 one end, resistance R1 other ends connection control letter Number port Ctrl, transistor M1 emitter stage and body ends ground connection；Transistor M1 colelctor electrode connection inductance L1 one end, inductance L1 The other end connects antenna port, and transistor M1 colelctor electrode is also connected with emission port TX.
- A kind of 3. fully integrated single-pole double-throw switch (SPDT) circuit according to claim 2, it is characterised in that the receiving branch bag Include transistor M2, inductance L2 and resistance R2, transistor M2 base stage connection resistance R2 one end, resistance R2 other ends connection control letter Number port Ctrl_NOT, transistor M2 emitter stage and body ends are directly grounded, transistor M2 colelctor electrode connection inductance L2 mono- End, inductance L2 other ends connection antenna port, transistor M2 colelctor electrode are also connected with receiving port RX.
- A kind of 4. fully integrated single-pole double-throw switch (SPDT) circuit according to claim 3, it is characterised in that when transmitting a signal, Control signal port Ctrl is high level, control signal port Ctrl_NOT is low level, and transistor M1 is opened, and transistor M2 is closed Close, the parasitic capacitance and inductance L1 carried on resonant capacitance C, transistor M1, form series resonant network.
- A kind of 5. fully integrated single-pole double-throw switch (SPDT) circuit according to claim 3, it is characterised in that when a signal is received, Control signal port Ctrl is low level, control signal port Ctrl_NOT is high level, and transistor M2 is opened, and M1 is closed, humorous Shake the parasitic capacitance carried on electric capacity C, transistor M2 and inductance L2, forms series resonant network.
- 6. a kind of fully integrated single-pole double-throw switch (SPDT) circuit according to claim 4 or 5, it is characterised in that change resonance electricity Hold the size of C values, the resonant frequency of series resonant network can be changed.
- 7. a kind of fully integrated single-pole double-throw switch (SPDT) circuit according to claim 4 or 5, it is characterised in that change inductance L1 With the size of inductance L2 values, the resonant frequency of series resonant network can be changed.
- 8. a kind of fully integrated single-pole double-throw switch (SPDT) circuit according to claim 4 or 5, it is characterised in that change transistor M1 and transistor M2 size can change the resonant frequency of series resonant network.
- 9. a kind of fully integrated single-pole double-throw switch (SPDT) circuit according to claim 1, it is characterised in that the circuit uses BiCMOS technique is integrated to be formed.
- 10. a kind of fully integrated single-pole double-throw switch (SPDT) circuit according to claim 1, it is characterised in that emission port TX is Signal stream inbound port, receiving port RX are signal stream exit ports.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710841658.9A CN107579730A (en) | 2017-09-18 | 2017-09-18 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
| CN201811068466.XA CN109194318A (en) | 2017-09-18 | 2018-09-13 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710841658.9A CN107579730A (en) | 2017-09-18 | 2017-09-18 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
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| CN107579730A true CN107579730A (en) | 2018-01-12 |
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| CN201710841658.9A Pending CN107579730A (en) | 2017-09-18 | 2017-09-18 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
| CN201811068466.XA Pending CN109194318A (en) | 2017-09-18 | 2018-09-13 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811068466.XA Pending CN109194318A (en) | 2017-09-18 | 2018-09-13 | A kind of fully integrated single-pole double-throw switch (SPDT) circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110943728A (en) * | 2019-12-23 | 2020-03-31 | 中国电子科技集团公司第五十四研究所 | CMOS millimeter wave ultra-wideband parallel asymmetric single-pole double-throw switch |
| CN111224653A (en) * | 2018-11-27 | 2020-06-02 | 住友电气工业株式会社 | SPDT switch |
| WO2024060905A1 (en) * | 2022-09-20 | 2024-03-28 | 深圳市中兴微电子技术有限公司 | Transceiver radio-frequency switch and switch circuit and control method therefor, and storage medium |
| WO2024174670A1 (en) * | 2023-02-20 | 2024-08-29 | 中兴通讯股份有限公司 | Single-pole double-throw (spdt) switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111800162B (en) * | 2019-04-04 | 2022-03-22 | 亚德诺半导体国际无限责任公司 | Radio frequency switch with controllable resonant frequency |
| CN110350900A (en) * | 2019-06-27 | 2019-10-18 | 伍晶 | A kind of single-pole single-throw switch (SPST) and single-pole double-throw switch (SPDT) |
| CN110943729B (en) * | 2019-12-23 | 2024-11-05 | 中国电子科技集团公司第五十四研究所 | A CMOS millimeter-wave series asymmetric single-pole double-throw switch |
| CN118826718B (en) * | 2024-06-13 | 2025-07-15 | 合肥鸣鸿微电子科技有限公司 | Double-pole double-throw switch circuit |
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| US9252767B1 (en) * | 2010-06-28 | 2016-02-02 | Hittite Microwave Corporation | Integrated switch module |
| WO2014182952A1 (en) * | 2013-05-08 | 2014-11-13 | Rfaxis, Inc. | Harmonic cancellation for radio frequency front-end switches |
| CN105049014B (en) * | 2015-08-07 | 2017-11-10 | 康希通信科技（上海）有限公司 | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more |
| CN105049015B (en) * | 2015-08-07 | 2018-01-16 | 康希通信科技（上海）有限公司 | The single-pole double throw RF switch and hilted broadsword of single-pole single-throw(SPST RF switch and its composition throw RF switch more |
| CN105227167B (en) * | 2015-09-21 | 2018-09-25 | 温州大学 | A kind of cmos switch circuit |
| CN105915203A (en) * | 2016-04-07 | 2016-08-31 | 杭州中科微电子有限公司 | Full CMOS single-pole double-throw switch circuit |
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- 2017-09-18 CN CN201710841658.9A patent/CN107579730A/en active Pending
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2018
- 2018-09-13 CN CN201811068466.XA patent/CN109194318A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111224653A (en) * | 2018-11-27 | 2020-06-02 | 住友电气工业株式会社 | SPDT switch |
| CN110943728A (en) * | 2019-12-23 | 2020-03-31 | 中国电子科技集团公司第五十四研究所 | CMOS millimeter wave ultra-wideband parallel asymmetric single-pole double-throw switch |
| WO2024060905A1 (en) * | 2022-09-20 | 2024-03-28 | 深圳市中兴微电子技术有限公司 | Transceiver radio-frequency switch and switch circuit and control method therefor, and storage medium |
| WO2024174670A1 (en) * | 2023-02-20 | 2024-08-29 | 中兴通讯股份有限公司 | Single-pole double-throw (spdt) switch |
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| CN109194318A (en) | 2019-01-11 |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180112 |