CN107406258A - Defect-free direct dry exfoliation of CVD graphene using polarized ferroelectric polymers - Google Patents
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Abstract
一种从其生长基底剥离石墨烯层的方法,包括使用来自极化的铁电层的静电场在石墨烯层与生长基底之间产生相对于石墨烯层与极化的铁电聚合物层之间的粘附力而言降低的相对粘附力。提供了用于从生长基底层离石墨烯层的相关制品和技术。
A method for exfoliating a graphene layer from its growth substrate includes using an electrostatic field from a polarized ferroelectric layer to generate a relative adhesion force between the graphene layer and the growth substrate that is reduced relative to the adhesion force between the graphene layer and the polarized ferroelectric polymer layer. Related articles and techniques for exfoliating the graphene layer from the growth substrate are provided.
Description
相关申请related application
本申请要求了2015年2月3日提交的美国临时申请号62/111,195的权益,该申请的全部教导通过引用并入本文。This application claims the benefit of US Provisional Application No. 62/111,195, filed February 3, 2015, the entire teachings of which are incorporated herein by reference.
背景技术Background technique
由于其优异的特性,石墨烯引起了人们极大的兴趣。然而,其工艺仍是阻碍石墨烯应用商业化的瓶颈。Graphene has attracted great interest due to its excellent properties. However, its process is still a bottleneck hindering the commercialization of graphene applications.
由于生长基底和/或生长条件与最终设备不匹配,因此需要将石墨烯从其生长基底转移到设备表面。这种转移工艺的主要步骤是:Since the growth substrate and/or growth conditions do not match the final device, graphene needs to be transferred from its growth substrate to the device surface. The main steps in this transfer process are:
(1)用转移层完全或部分地涂覆或覆盖石墨烯。参见图1,图1示出了根据现有技术的基底/石墨烯/剥离层结构的示意图,该结构包括剥离层100、石墨烯110和基底120。(1) Coating or covering the graphene fully or partially with the transfer layer. Referring to FIG. 1 , FIG. 1 shows a schematic diagram of a substrate/graphene/exfoliation layer structure according to the prior art, which structure includes an exfoliation layer 100 , graphene 110 and a substrate 120 .
(2)通过化学蚀刻基底、通过(电)化学层离(delaminating)或从基底中机械剥离石墨烯来从生长基底中释放石墨烯/转移层。由于是在溶液中处理石墨烯,因此化学蚀刻和(电)化学层离是湿法工艺。机械剥离是干法工艺。(2) Release of the graphene/transferred layer from the growth substrate by chemical etching of the substrate, by (electro)chemical delamination or mechanical exfoliation of graphene from the substrate. Since graphene is processed in solution, chemical etching and (electro)chemical delamination are wet processes. Mechanical stripping is a dry process.
(3)将石墨烯/转移层转移到目标基底上。如果转移层是石墨烯的目标基底,则可跳过该步骤。(3) Transfer the graphene/transfer layer onto the target substrate. This step can be skipped if the transfer layer is the target substrate for graphene.
(4)去除转移层。如果将转移层保留在石墨烯上,则可跳过该步骤。(4) Remove the transfer layer. This step can be skipped if the transfer layer is kept on graphene.
这种多步骤工艺会导致石墨烯上出现污染物并引起结构缺陷,使最终设备的特性变差并使其在整个样品中不均匀。This multi-step process leads to contamination on the graphene and induces structural defects that degrade the properties of the final device and make it inhomogeneous throughout the sample.
从生长基底释放石墨烯/转移层的方法会强烈影响所得石墨烯的残留量和缺陷水平。如上所述,方法可分组为湿法(化学蚀刻、(电-)化学层离)或干法(机械剥离)。The method of releasing the graphene/transferred layer from the growth substrate strongly affects the residual and defect levels of the resulting graphene. As mentioned above, methods can be grouped as wet (chemical etching, (electro-)chemical delamination) or dry (mechanical stripping).
在湿法工艺的情况下:In case of wet process:
-使用的化学物质或来自化学反应的产物在石墨烯上留下残留物,该残留物无法很容易地通过彻底冲洗去除。- Chemicals used or products from chemical reactions leave residues on the graphene that cannot be easily removed by thorough rinsing.
-这些残留物可与石墨烯结合并使其晶体结构产生缺陷。这会导致石墨烯更脆,并且在处理期间容易发生机械缺陷,例如在转移到基底期间或去除转移层时。当在电子设备中使用时,这些缺陷也将降低石墨烯的电子性能。- These residues can bind to graphene and create defects in its crystal structure. This makes the graphene more brittle and prone to mechanical defects during handling, for example during transfer to the substrate or when removing the transferred layer. These defects would also degrade graphene's electronic properties when used in electronic devices.
-即使残留物不引起缺陷时,残留物存在于石墨烯上仍然会使石墨烯的电气、光学、化学或机械性能降低和/或变得不均匀。例如,在设备内,需要石墨烯与相邻层之间的清洁界面来实现高的设备效率,并且这种残留物将降低设备性能和不同设备的均匀性。- Even when residues do not cause defects, the presence of residues on graphene can degrade and/or become inhomogeneous in electrical, optical, chemical or mechanical properties of graphene. For example, within devices, a clean interface between graphene and adjacent layers is required to achieve high device efficiency, and such residues will degrade device performance and uniformity across devices.
-一旦将石墨烯转移到目标基底上,石墨烯与目标基底之间的界面处的化学残留物会降低石墨烯与基底的粘附力,并因此限制设备的机械稳定性。- Once the graphene is transferred onto the target substrate, chemical residues at the interface between the graphene and the target substrate reduce the adhesion of the graphene to the substrate and thus limit the mechanical stability of the device.
-由于会发生化学反应,因此湿法工艺很缓慢。例如,蚀刻可生长石墨烯的35微米厚的铜基底通常将持续2个多小时。(电-)化学层离工艺是包括任何蚀刻的更快的工艺,但其速度限于每秒约1毫米。这些处理速度与高通量制造不匹配。- The wet process is slow due to the chemical reactions that occur. For example, etching a 35-micron thick copper substrate on which graphene can grow would typically take more than 2 hours. The (electro-)chemical delamination process is a faster process including any etching, but its speed is limited to about 1 millimeter per second. These processing speeds are no match for high-throughput manufacturing.
在干法工艺的情况下:In case of dry process:
-通过确保剥离层与石墨烯的充分粘附力,使得该粘附力将高于石墨烯与其基底之间的粘附力来剥离石墨烯的方法。在基底是铜的情况下,石墨烯与铜的粘附力为约8J/m2。- A method of exfoliating graphene by ensuring sufficient adhesion of the exfoliated layer to the graphene such that the adhesion will be higher than the adhesion between graphene and its substrate. In the case where the substrate is copper, the adhesion of graphene to copper is about 8 J/m 2 .
-第一机械剥离方法利用压力和/或温度来实现石墨烯与剥离层之间的共形接触(conformal contact),和/或利用高电压诱导它们之间的直接化学结合。然后,剥离层与石墨烯的化学粘附力需高于石墨烯与其基底的粘附力。- The first mechanical exfoliation method utilizes pressure and/or temperature to achieve a conformal contact between the graphene and the exfoliated layer, and/or utilizes high voltage to induce direct chemical bonding between them. Then, the chemical adhesion of the exfoliated layer to the graphene needs to be higher than the adhesion of graphene to its substrate.
-第二类型的机械剥离方法需要粘合剂层作为剥离层。然后,粘合剂层与石墨烯的粘附力需高于石墨烯与其基底的粘附力。- The second type of mechanical release method requires an adhesive layer as release layer. Then, the adhesion of the adhesive layer to the graphene needs to be higher than the adhesion of the graphene to its substrate.
-然而,已经证实,由于应变不均匀和/或剥离力不均匀,转移的石墨烯总是被严重损坏。-However, it has been demonstrated that the transferred graphene is always severely damaged due to non-uniform strain and/or non-uniform exfoliation force.
-当剥离层在整个石墨烯表面上不具有均匀的涂层时或者当诸如温度和压力等参数变化很大时,会发生不均匀的应变。- Inhomogeneous strain occurs when the exfoliated layer does not have a uniform coating over the entire graphene surface or when parameters such as temperature and pressure vary greatly.
-剥离力不均匀是由基底上的石墨烯的实际条件导致的,其中基底形貌由晶界和阶地(terraces)组成(长度尺寸为10-100μm2)。这种变化的形貌导致剥离期间的剥离力不均匀。- The inhomogeneity of the peeling force is caused by the actual conditions of the graphene on the substrate, where the substrate morphology consists of grain boundaries and terraces (length dimension 10-100 μm 2 ). This changing topography leads to non-uniform peel force during peeling.
-在剥离期间,不均匀性引起裂纹和/或未转移的石墨烯区域。由于这些裂纹,转移的石墨烯的质量不可逆地降低。这些裂纹以0.1mm的量级形成,并且当测量到长度量级为1mm或更长的裂纹时,将对石墨烯质量产生显著影响。当在生长基底上使用理想的晶体石墨烯作为原始材料时,这种测量结果显示迁移率下降至小于200cm-2/Vs并对具有最低薄层电阻的透明电极表现出不适应性,即使在>1,000ohm/sq的高掺杂的情况下。相比之下,如果这种石墨烯保持无缺陷,则迁移率通常为约5,000cm-2/Vs,且最低薄层电阻为150ohm/sq。- During exfoliation, inhomogeneities cause cracks and/or areas of untransferred graphene. Due to these cracks, the quality of the transferred graphene is irreversibly reduced. These cracks form on the order of 0.1 mm, and when measured as cracks with a length of the order of 1 mm or longer, will have a significant impact on graphene quality. When using ideal crystalline graphene as the starting material on the growth substrate, such measurements show a drop in mobility to less than 200 cm -2 /Vs and exhibit incompatibility for transparent electrodes with the lowest sheet resistance, even at > 1,000ohm/sq high doping case. In contrast, if such graphene remains defect-free, the mobility is typically around 5,000 cm −2 /Vs, with a minimum sheet resistance of 150 ohm/sq.
-两种类型的剥离方法都致力于在石墨烯与剥离层之间实现足够高且足够均匀的粘附能量以产生无缺陷剥离。这些方法不会影响石墨烯与基底之间的粘附能量。因此,从基底层离石墨烯所需的最小能量保持不变。为了进一步提高层离的石墨烯的质量,仍需要对石墨烯具有较强粘附力的剥离层以及将整个石墨烯表面上的非均匀性最小化的技术。- Both types of exfoliation methods aim to achieve a sufficiently high and uniform enough adhesion energy between the graphene and the exfoliated layer to yield defect-free exfoliation. These methods do not affect the adhesion energy between graphene and substrate. Therefore, the minimum energy required to delaminate graphene from the substrate remains unchanged. In order to further improve the quality of exfoliated graphene, exfoliated layers with strong adhesion to graphene and techniques to minimize heterogeneity across the graphene surface are still required.
因此,仍然需要用于从生长基底层离石墨烯的商业上可行的技术,并且该技术应优选是无缺陷的机械剥离方法。Therefore, there is still a need for a commercially viable technique for exfoliating graphene from growth substrates, and this technique should preferably be a defect-free mechanical exfoliation method.
发明内容Contents of the invention
根据本发明的一种版本,提供了一种从其生长基底剥离石墨烯层的方法。先前的方法依赖于通过使石墨烯与一表面接触(该表面与石墨烯的结合强于石墨烯与其基底的结合)实现石墨烯与剥离层之间的粘附力强于石墨烯与其基底的粘附力。替而代之,根据本发明的一种版本的方法,与在石墨烯与其基底之间的粘附力相比,利用铁电聚合物层的极化在石墨烯与铁电层之间诱导更强的粘附力。According to one version of the invention there is provided a method of exfoliating a graphene layer from its growth substrate. Previous methods relied on achieving stronger adhesion between graphene and the exfoliated layer than between graphene and its substrate by bringing the graphene into contact with a surface that binds graphene more strongly than graphene binds to its substrate. Attachment. Instead, according to one version of the method of the invention, the polarization of the ferroelectric polymer layer is used to induce a stronger bond between the graphene and the ferroelectric layer than between the graphene and its substrate. Strong adhesion.
根据本发明的一种版本,提供了一种用于从生长基底层离石墨烯层的制品。该制品包含在生长基底上的石墨烯层和在石墨烯层上的极化的铁电聚合物层。石墨烯层被粘附于并夹在极化的铁电聚合物层与生长基底之间。对极化的铁电聚合物层进行布置和极化以在石墨烯层与生长基底之间产生相对于石墨烯层与极化的铁电聚合物层之间的粘附力而言降低的相对粘附力。可对极化的铁电聚合物层进行布置和极化,以增强铁电聚合物层与石墨烯的粘附力,以及铁电聚合物和石墨烯复合材料与基底之间的粘附力。According to one version of the invention, an article for delamination of a graphene layer from a growth substrate is provided. The article comprises a graphene layer on a growth substrate and a poled ferroelectric polymer layer on the graphene layer. A graphene layer is adhered to and sandwiched between the polarized ferroelectric polymer layer and the growth substrate. Arranging and polarizing the polarized ferroelectric polymer layer to create a reduced relative adhesion between the graphene layer and the growth substrate relative to adhesion between the graphene layer and the polarized ferroelectric polymer layer Adhesion. The polarized ferroelectric polymer layer can be arranged and polarized to enhance the adhesion of the ferroelectric polymer layer to the graphene, and the adhesion of the ferroelectric polymer and graphene composite to the substrate.
进一步的,在本发明的其它相关版本中,石墨烯层可以包括通过类似化学气相沉积的方法在催化基底(例如,铜)上生长的单层或多层石墨烯(例如,2至10层)。催化基底可以是其它金属,包括镍、铂或钴,或已知会催化石墨烯(包括锗)的其它材料。催化剂可以包含在另一基底上的金属箔或金属薄膜。石墨烯可以是通过其它外延方法获得的石墨烯,例如通过加热碳化硅。极化的铁电聚合物层可以包含含氟聚合物,例如聚偏二氟乙烯或聚偏二氟乙烯的共聚物。极化的铁电聚合物层可以包含约1纳米至约1毫米的厚度,例如约100纳米至约2000纳米的厚度。极化的铁电聚合物层可以包含约5μC/cm2至约10μC/cm2的剩余极化,例如约7.5μC/cm2。Further, in other related versions of the present invention, the graphene layer may comprise single or multilayer graphene (for example, 2 to 10 layers) grown on a catalytic substrate (for example, copper) by a method similar to chemical vapor deposition . The catalytic substrate can be other metals, including nickel, platinum, or cobalt, or other materials known to catalyze graphene, including germanium. The catalyst may comprise a metal foil or metal film on another substrate. The graphene may be graphene obtained by other epitaxy methods, for example by heating silicon carbide. The polarized ferroelectric polymer layer may comprise a fluoropolymer such as polyvinylidene fluoride or a copolymer of polyvinylidene fluoride. The polarized ferroelectric polymer layer may comprise a thickness of about 1 nanometer to about 1 millimeter, for example a thickness of about 100 nanometers to about 2000 nanometers. The polarized ferroelectric polymer layer may comprise a remanent polarization of about 5 μC/cm 2 to about 10 μC/cm 2 , for example about 7.5 μC/cm 2 .
根据本发明的另一种版本,提供了一种从生长基底分离复合材料的方法,该复合材料包括铁电聚合物层和石墨烯层,并且石墨烯层被粘附于并夹在铁电聚合物层与生长基底之间。该方法包括:(i)极化铁电聚合物以在石墨烯层与生长基底之间产生相对于石墨烯层与极化的铁电聚合物层之间的粘附力而言降低的相对粘附力;和(ii)剥离复合材料以将石墨烯层从生长基底分离。可使铁电聚合物层极化以产生吸引力,从而增强铁电聚合物层与石墨烯的粘附力以及铁电聚合物和石墨烯复合材料与基底之间的粘附力。According to another version of the invention, there is provided a method of separating a composite material comprising a ferroelectric polymer layer and a graphene layer from a growth substrate, the graphene layer being adhered to and sandwiched between a ferroelectric polymer between the layer and the growth substrate. The method comprises: (i) polarizing the ferroelectric polymer to produce a reduced relative adhesion between the graphene layer and the growth substrate relative to the adhesion between the graphene layer and the poled ferroelectric polymer layer adhesion; and (ii) exfoliation of the composite to separate the graphene layer from the growth substrate. The ferroelectric polymer layer can be polarized to create an attractive force, thereby enhancing the adhesion of the ferroelectric polymer layer to the graphene and the adhesion of the ferroelectric polymer and graphene composite to the substrate.
进一步的,在本发明的其它相关版本中,该方法还可包括将铁电聚合物层施加到石墨烯层以形成复合材料。该方法还可包括通过将石墨烯层粘附到目标基底上以将剥离的复合材料转移到目标基底;并且还可包括从石墨烯层除去铁电聚合物层以留下粘附于目标基底的石墨烯层。剥离后,石墨烯层在铁电聚合物层上的连续性可以是石墨烯层在生长基底上的的初始覆盖率的90%或更高,例如是石墨烯层在生长基底上的初始覆盖率的95%或更高,或例如99%或更高。复合材料还可包括粘附于铁电聚合物层的二级基底,并且铁电聚合物层可以夹在二级基底与石墨烯层之间。该方法还可以包括通过将石墨烯层粘附于目标基底来将剥离的复合材料转移到目标基底;并且从铁电聚合物层释放二级基底,留下粘附于目标基底的铁电聚合物层和石墨烯层;并且可从石墨烯层去除铁电聚合物层,留下粘附于目标基底的石墨烯层。Further, in other related versions of the present invention, the method may further include applying a ferroelectric polymer layer to the graphene layer to form a composite material. The method may also include transferring the exfoliated composite material to the target substrate by adhering the graphene layer to the target substrate; and may also include removing the ferroelectric polymer layer from the graphene layer to leave the graphene layer. After exfoliation, the continuity of the graphene layer on the ferroelectric polymer layer may be 90% or higher of the initial coverage of the graphene layer on the growth substrate, such as the initial coverage of the graphene layer on the growth substrate 95% or higher, or for example 99% or higher. The composite material may also include a secondary substrate adhered to the ferroelectric polymer layer, and the ferroelectric polymer layer may be sandwiched between the secondary substrate and the graphene layer. The method may also include transferring the exfoliated composite to the target substrate by adhering the graphene layer to the target substrate; and releasing the secondary substrate from the ferroelectric polymer layer, leaving the ferroelectric polymer adhered to the target substrate layer and the graphene layer; and the ferroelectric polymer layer can be removed from the graphene layer, leaving the graphene layer adhered to the target substrate.
另外,在本发明的其它相关版本中,极化可以包括向聚合物层施加外电场。该方法还可包括用至少约85J/m2的剥离力剥离复合材料,以将复合材料从生长基底分离。使铁电聚合物极化可以导致约5μC/cm2至约10μC/cm2,例如约7.5μC/cm2的铁电聚合物的剩余极化。Additionally, in other related versions of the invention, poling may include applying an external electric field to the polymer layer. The method may also include peeling the composite material with a peel force of at least about 85 J/ m2 to separate the composite material from the growth substrate. Polarizing the ferroelectric polymer may result in a remanent polarization of the ferroelectric polymer of about 5 μC/cm 2 to about 10 μC/cm 2 , for example about 7.5 μC/cm 2 .
附图说明Description of drawings
根据以下对附图所示的本发明的示例性实施方案的更具体的描述,前述内容将显而易见,其中相同的附图标记在所有不同视图中指示相同的部件。附图不一定按比例绘制,相反的,其重点在于说明本发明的实施方案。The foregoing will be apparent from the following more particular description of exemplary embodiments of the invention illustrated in the accompanying drawings, wherein like reference numerals designate like parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating embodiments of the invention.
图1是根据现有技术的基底/石墨烯/剥离层结构的示意图。Figure 1 is a schematic diagram of a substrate/graphene/exfoliated layer structure according to the prior art.
图2是根据本发明的一种版本的石墨烯剥离方法的示意图:左图示出生长基底上的石墨烯,中心图示出采用含有诸如聚偏二氟乙烯(在本文为“PVDF”)的铁电聚合物涂覆石墨烯;以及右图示出从石墨烯生长基底剥离石墨烯-PVDF。Figure 2 is a schematic diagram of a version of the graphene exfoliation method according to the present invention: the left figure shows graphene on a growth substrate, the center figure shows the use of a material such as polyvinylidene fluoride (herein "PVDF") Ferroelectric polymer coated graphene; and right panel showing exfoliation of graphene-PVDF from graphene growth substrate.
图3是说明根据本发明的一种版本的强石墨烯-铁电聚合物结合(例如,石墨烯-PVDF结合)的机理的示意图:左图示出石墨烯对铁电膜的PVDF诱导的更强的静电增强(相对于石墨烯对基底的增强而言);右图示出PVDF-石墨烯原子级结合。Figure 3 is a schematic diagram illustrating the mechanism of a strong graphene-ferroelectric polymer bond (e.g., graphene-PVDF bond) according to a version of the invention: Strong electrostatic enhancement (relative to graphene-to-substrate reinforcement); right panel shows PVDF-graphene atomic-scale bonding.
图4是根据本发明的一种版本,基底-石墨烯-铁电聚合物体系的界面的粗糙度的一组原子力显微镜图像和截面图。左图是在涂覆铁电聚合物之前,基底上的石墨烯的高度扫描。中心图是已从基底剥离石墨烯-铁电聚合物后,石墨烯-极化的铁电聚合物的高度扫描。右图示出根据左图和中心图的部分的基底-石墨烯和石墨烯-极化的铁电聚合物的截面图。4 is a set of atomic force microscope images and cross-sectional views of the roughness of the interface of a substrate-graphene-ferroelectric polymer system, according to a version of the invention. The image on the left is a height scan of graphene on a substrate before coating with a ferroelectric polymer. The center panel is a height scan of the graphene-polarized ferroelectric polymer after the graphene-ferroelectric polymer has been exfoliated from the substrate. The right figure shows a cross-sectional view of a substrate-graphene and a graphene-polarized ferroelectric polymer according to parts of the left and center figures.
图5是根据本发明的特定实施例的经处理后的基底、石墨烯和铁电聚合物层之间的粘附能量的图,其中基底是铜箔,石墨烯是通过化学气相沉积在铜上的生长的一层石墨烯,而铁电聚合物层是PVDF。虚线表示当将具有足够粘附强度的粘合剂施加到石墨烯上时,极化的铁电聚合物层和石墨烯复合材料以及复合材料之间的临界粘附力(criticaladhesion),石墨烯与铜基底之间的临界粘附能量,以及当铁电聚合物未被极化时,铁电聚合物层与石墨烯之间的临界粘附能量。实验数据涉及在不同载荷下从基底剥离极化的铁电聚合物层和石墨烯复合材料的条件。Figure 5 is a graph of the adhesion energy between a treated substrate, graphene and a ferroelectric polymer layer according to certain embodiments of the present invention, wherein the substrate is copper foil and the graphene is deposited on copper by chemical vapor deposition A layer of graphene is grown, while the ferroelectric polymer layer is PVDF. The dotted line indicates the critical adhesion between the polarized ferroelectric polymer layer and the graphene composite and the composite when an adhesive with sufficient adhesive strength is applied to the graphene, graphene and Critical adhesion energy between copper substrates, and between ferroelectric polymer layers and graphene when the ferroelectric polymer is not polarized. Experimental data relate to conditions under which polarized ferroelectric polymer layers and graphene composites are exfoliated from substrates under different loads.
图6是示出使用三种不同石墨烯剥离技术的石墨烯剥离产率的比较的一组照片。左图是示出采用不会导致足够强的结合和/或垂直于石墨烯的电场的聚合物剥离后的结果的照片;中心图是示出采用铁电聚合物剥离之后的结果的照片,未对铁电聚合物结构进行处理以形成铁电晶粒和/或这些晶粒未根据垂直于石墨烯的场对准;以及右图是示出使用根据本发明的一种版本的方法剥离后的结果的照片。可以看出,左图使用的技术留下无石墨烯61和石墨烯薄片62的区域;中心图使用的技术留下无石墨烯63和石墨烯碎片(patches)64的区域;而根据本发明的一种版本,右图的技术获得具有石墨烯65和多层石墨烯66两者的覆盖。Figure 6 is a set of photographs showing a comparison of graphene exfoliation yields using three different graphene exfoliation techniques. The left panel is a photo showing the results after exfoliation using a polymer that does not result in sufficiently strong bonding and/or an electric field perpendicular to the graphene; the center panel is a photo showing the results after exfoliation using a ferroelectric polymer, not The ferroelectric polymer structure is processed to form ferroelectric grains and/or these grains are not aligned according to the field perpendicular to the graphene; and the figure on the right is showing exfoliation using a version of the method according to the present invention Photos of the results. It can be seen that the technique used in the left figure leaves the regions without graphene 61 and graphene flakes 62; the technique used in the center figure leaves the regions without graphene 63 and graphene fragments (patches) 64; One version, the technique on the right obtains an overlay with both graphene 65 and multilayer graphene 66 .
图7是示出使用根据本发明的一种版本的方法并使用标准现有技术石墨烯转移工艺剥离石墨烯之后的缺陷(裂纹)的统计比较的一组图表:左图示出根据其面积的裂纹的统计分布,以及右图为总裂纹面积统计的条形图。Figure 7 is a set of graphs showing statistical comparisons of defects (cracks) after exfoliation of graphene using a version of the method according to the invention and using a standard prior art graphene transfer process: The statistical distribution of the cracks, and the right figure is the bar graph of the total crack area statistics.
图8是示出根据本发明的一种版本的直接剥离转移方法的用途的示意图。图(a)示出石墨烯/铁电聚合物;图(b)示出位于基底上的石墨烯-铁电聚合物,其中石墨烯面朝上;图(c)示出位于基底上的石墨烯-铁电聚合物,其中石墨烯面朝下;以及图(d)示出位于表面上的石墨烯。Figure 8 is a schematic diagram illustrating the use of a direct peel transfer method according to a version of the present invention. Figure (a) shows graphene/ferroelectric polymer; Figure (b) shows graphene-ferroelectric polymer on a substrate with graphene facing up; Figure (c) shows graphite on a substrate ene-ferroelectric polymer, wherein the graphene faces down; and (d) shows the graphene on the surface.
具体实施方式detailed description
以下是对本发明的示例性实施方案的描述。The following is a description of exemplary embodiments of the present invention.
根据本发明的一种版本提供了一种从其生长基底剥离石墨烯层的方法。先前的方法依赖于通过使石墨烯与一表面接触(该表面与石墨烯的结合强于石墨烯与其基底的结合)实现石墨烯与剥离层之间的粘附力强于石墨烯与其基底的粘附力。替而代之,根据本发明的一种版本的方法,与在石墨烯与其基底之间的粘附力相比,利用铁电聚合物层的极化在石墨烯与铁电层之间诱导更强的粘附力。According to one version of the invention there is provided a method of exfoliating a graphene layer from its growth substrate. Previous methods relied on achieving stronger adhesion between graphene and the exfoliated layer than between graphene and its substrate by bringing the graphene into contact with a surface that binds graphene more strongly than graphene binds to its substrate. Attachment. Instead, according to one version of the method of the invention, the polarization of the ferroelectric polymer layer is used to induce a stronger bond between the graphene and the ferroelectric layer than between the graphene and its substrate. Strong adhesion.
图2是根据本发明的一种版本的石墨烯剥离方法的示意图。左图示出生长基底220上的初始石墨烯210。中心图示出采用含有诸如聚偏二氟乙烯(此处“PVDF”)的铁电聚合物230涂覆石墨烯210,聚偏二氟乙烯具有下文描述的特征。右图示出从石墨烯生长基底220剥离石墨烯/铁电聚合物层210/230。Figure 2 is a schematic diagram of a version of the graphene exfoliation method according to the present invention. The left figure shows initial graphene 210 on a growth substrate 220 . The center panel shows the coating of graphene 210 with a ferroelectric polymer 230 such as polyvinylidene fluoride (herein "PVDF"), which has the characteristics described below. The right figure shows the graphene/ferroelectric polymer layer 210 / 230 exfoliated from the graphene growth substrate 220 .
A)通过极化的铁电层剥离石墨烯(机理)A) Exfoliation of graphene via a polarized ferroelectric layer (mechanism)
图3是说明根据本发明的一种版本的强石墨烯-铁电聚合物结合(例如,石墨烯-PVF结合)的机理的示意图,而不希望受理论束缚。根据本发明的一种版本的方法,使用石墨烯上的铁电聚合物层的极化来增加其与石墨烯的粘附力。极化铁电聚合物层还会增加极化的铁电聚合物层和石墨烯复合材料与基底的粘附力。相对于石墨烯与极化的铁电聚合物层的粘附力,极化铁电聚合物层还会减弱石墨烯与基底的粘附力。3 is a schematic diagram illustrating the mechanism of a strong graphene-ferroelectric polymer bond (eg, graphene-PVF bond) according to one version of the invention, without wishing to be bound by theory. According to one version of the method of the invention, the polarization of the ferroelectric polymer layer on the graphene is used to increase its adhesion to the graphene. Poling the ferroelectric polymer layer also increases the adhesion of the polarized ferroelectric polymer layer and graphene composite to the substrate. The polarized ferroelectric polymer layer also reduces the adhesion of graphene to the substrate relative to the adhesion of graphene to the polarized ferroelectric polymer layer.
一方面(参见图3,左图),石墨烯310与极化的铁电聚合物330之间以及极化的铁电聚合物层330与石墨烯310复合材料和其基底320之间产生了吸引力。根据本发明的一种版本的方法,能够通过使用石墨烯/基底310/320上的极化的铁电聚合物层330来实现该机理。On the one hand (see FIG. 3 , left panel), there is an attraction between the graphene 310 and the poled ferroelectric polymer 330 and between the poled ferroelectric polymer layer 330 and the graphene 310 composite and its substrate 320. force. According to one version of the method of the present invention, this mechanism can be achieved by using a polarized ferroelectric polymer layer 330 on the graphene/substrate 310/320.
-极化的铁电聚合物层330内的铁电偶极子在垂直于石墨烯310的方向上的对准会产生垂直于石墨烯310的强电场,而不论偶极子的电取向(electric orientation)如何。- The alignment of the ferroelectric dipoles in the polarized ferroelectric polymer layer 330 in a direction perpendicular to the graphene 310 produces a strong electric field perpendicular to the graphene 310, regardless of the dipole's electrical orientation (electric orientation) how.
-该铁电层产生的电场高度掺杂有石墨烯,使得其在石墨烯片内诱导出电荷。来自这种静电相互作用的结果,石墨烯被吸引到铁电层。这种吸引提高了石墨烯与铁电层之间的粘附力。- The electric field generated by the ferroelectric layer is highly doped with graphene such that it induces charges within the graphene sheet. As a result of this electrostatic interaction, graphene is attracted to the ferroelectric layer. This attraction improves the adhesion between the graphene and the ferroelectric layer.
-由于来自极化的铁电层的静电场,还在基底与极化的铁电聚合物层以及石墨烯复合材料之间诱导了吸引相互作用。- Attractive interactions are also induced between the substrate and the polarized ferroelectric polymer layer and the graphene composite due to the electrostatic field from the polarized ferroelectric layer.
由于该铁电聚合物/石墨烯/基底结构330/310/320,铁电聚合物330与石墨烯310之间的粘附能量得以增强至高于从基底320剥离石墨烯310所需的粘附能量。来自这些相互作用的结果,可以无缺陷地从基底剥离石墨烯,即无任何诱导的机械缺陷。Due to the ferroelectric polymer/graphene/substrate structure 330/310/320, the adhesion energy between the ferroelectric polymer 330 and the graphene 310 is enhanced above that required to peel the graphene 310 from the substrate 320 . As a result of these interactions, graphene can be exfoliated from the substrate defect-free, ie without any induced mechanical defects.
另一方面,根据本发明的一种版本(参见图4),制备具有铁电聚合物330的石墨烯310的涂层以确保一均匀的界面,均匀的界面会产生原子级地精确强结合,从而限制剥离工艺中的不均匀性,且可以防止石墨烯在该工艺中遭受应力。因此,可以防止石墨烯遭受机械损坏。On the other hand, according to a version of the invention (see FIG. 4 ), a coating of graphene 310 with a ferroelectric polymer 330 is prepared to ensure a homogeneous interface, which produces a strong bond precisely at the atomic level, Inhomogeneities in the lift-off process are thereby limited, and the graphene can be prevented from being stressed during the process. Therefore, graphene can be protected from mechanical damage.
石墨烯310与铁电层330之间的界面也设计成反转它们的低粘附能量,以获得能够剥离石墨烯的结合能量。The interface between graphene 310 and ferroelectric layer 330 is also designed to invert their low adhesion energy to obtain a binding energy capable of exfoliating the graphene.
-石墨烯对大多数材料具有固有的弱范德华粘附强度。- Graphene has inherently weak van der Waals adhesion strength to most materials.
-作为实例,含氟聚合物具有固有的弱吸引力,其中特氟隆用于不粘的表面。- As an example, fluoropolymers have an inherent weak attraction, where Teflon is used for non-stick surfaces.
-然而,由于聚合物上的高负电性氟原子与来自石墨烯的π轨道(pi-orbitals)的原子范德华相互作用,石墨烯310和含氟聚合物330的相互作用在对涂层进行适当设计并对石墨烯上的聚合物进行极化之后变强。-However, due to the highly electronegative fluorine atoms on the polymer interacting with atoms from pi-orbitals (pi-orbitals) of graphene van der Waals, the interaction of graphene 310 and fluoropolymer 330 is critical for proper design of the coating And after polarizing the polymer on the graphene, it becomes stronger.
-石墨烯与含氟聚合物之间的范德华相互作用不会诱导石墨烯产生任何缺陷。- Van der Waals interactions between graphene and fluoropolymers do not induce any defects in graphene.
-铁电聚合物是含氟聚合物,一旦分子相应地取向,其就是基于与石墨烯的氟-π键(Fluorine-Pi bond)相互作用的用于产生强范德华粘附强度的理想材料。- Ferroelectric polymers are fluoropolymers which are ideal materials for producing strong van der Waals adhesion strength based on Fluorine-Pi bond interactions with graphene once the molecules are oriented accordingly.
-在石墨烯表面上涂覆铁电聚合物使得整个石墨烯表面的相互作用均匀并且不会在石墨烯中诱导任何缺陷。- Coating ferroelectric polymers on the graphene surface makes the interaction uniform across the graphene surface and does not induce any defects in the graphene.
-在根据本发明的一种版本的铁电体/石墨烯/基底结构中,总的来说,氟-π分子间键在石墨烯/铁电体之间具有更强的吸引力,从而使得能够从生长基底机械剥离石墨烯。- In a version of the ferroelectric/graphene/substrate structure according to the invention, in general the fluorine-π intermolecular bond has a stronger attraction between the graphene/ferroelectric, making Graphene can be mechanically exfoliated from the growth substrate.
-然而,铁电聚合物与石墨烯之间的机械强度在位点(诸如晶界或铜阶地)可能不够强和/或不够均匀,因此即便石墨烯被剥离,在转移期间仍可能发生裂纹。-However, the mechanical strength between the ferroelectric polymer and graphene may not be strong and/or uniform at sites such as grain boundaries or copper terraces, so even if the graphene is exfoliated, cracks may still occur during transfer.
各个单独的机理都有助于实现无缺陷石墨烯,并且两种效果的组合会产生原始状态、无缺陷的石墨烯,甚至在石墨烯的很大面积上跨越位点(诸如晶界或铜阶地)。Each of the individual mechanisms contributes to defect-free graphene, and the combination of the two effects produces pristine, defect-free graphene, even across large areas of graphene across sites such as grain boundaries or copper terraces. ).
B)根据本发明的一种版本的实施方式B) Embodiments according to a version of the invention
1)在生长基底上形成石墨烯1) Form graphene on the growth substrate
在本发明的一个实例中,可通过在铜箔基底上进行化学气相沉积(CVD)来生长石墨烯。在将其放置在生长室内之前,可以用(但不限于)溶剂清洗铜箔以去除其表面的残留物。生长工艺可包括退火步骤,其中气体(诸如,氢气)将在约为生长温度(即,约1000℃)的温度下流动。接着,烃(诸如,甲烷)将与氢气一起流动,以促进石墨烯生长。最后,冷却生长室,并且取出表面上具有石墨烯的铜箔。In one example of the present invention, graphene may be grown by chemical vapor deposition (CVD) on a copper foil substrate. The copper foil can be cleaned with (but not limited to) a solvent to remove residue from its surface before placing it in the growth chamber. The growth process may include an annealing step in which a gas, such as hydrogen, will flow at a temperature around the growth temperature (ie, about 1000° C.). Next, a hydrocarbon such as methane will flow with the hydrogen to promote graphene growth. Finally, the growth chamber was cooled, and the copper foil with graphene on the surface was removed.
可以根据生长基底的类型或合成室内的条件将石墨烯形成为单层或多层。Graphene can be formed as a single layer or a multilayer depending on the type of growth substrate or the conditions in the synthesis chamber.
可选地,可以使用SiC来生长石墨烯。在这种情况下,在将会使SiC表面的Si原子升华并促进C原子重结晶以形成一层或多层石墨烯的温度下将基底退火。Alternatively, SiC can be used to grow graphene. In this case, the substrate is annealed at a temperature that will sublimate the Si atoms on the SiC surface and promote the recrystallization of the C atoms to form one or more layers of graphene.
2)用极化的铁电聚合物膜涂覆石墨烯2) Coating graphene with a polarized ferroelectric polymer film
在干燥环境中,采用铁电聚合物的溶液涂覆石墨烯。可以使用诸如(但不限于)旋转涂布、Langmuir Blodgett、浸渍涂布、夹缝式挤压型涂布、棒涂布(bar coating)、刮刀或线涂布的方法来形成这种涂层。In a dry environment, the graphene is coated with a solution of a ferroelectric polymer. Such coatings can be formed using methods such as, but not limited to, spin coating, Langmuir Blodgett, dip coating, slot die coating, bar coating, doctor blade or wire coating.
在本发明的一实例中,可以将PVDF溶解在二甲基甲酰胺(DMF)中,并且稍后可以将该溶液涂覆在石墨烯上。In an example of the present invention, PVDF can be dissolved in dimethylformamide (DMF), and this solution can be coated on graphene later.
在本发明的一实例中,可通过旋转涂布采用PVDF薄膜涂覆石墨烯基底/石墨烯。以2000rpm旋转涂布含10%PVDF的DMF溶液可以产生500nm厚的膜的涂层。可能需要预先将基底退火使石墨烯上的水分子蒸发,以获得不含水残留物的石墨烯聚合物界面。可能需要在干燥的环境中完成涂层,使得聚合物层不存在来自其分子之间捕获有水分子而导致的缺陷。In an example of the present invention, the graphene substrate/graphene can be coated with a PVDF film by spin coating. Spin coating of 10% PVDF in DMF solution at 2000 rpm can produce a coating of a 500 nm thick film. It may be necessary to pre-anneal the substrate to evaporate the water molecules on the graphene to obtain a graphene-polymer interface free of aqueous residues. The coating may need to be done in a dry environment so that the polymer layer is free from defects resulting from trapped water molecules between its molecules.
涂覆后,可以将膜退火以蒸发溶剂并将聚合物链重结晶成晶粒。退火温度应低于聚合物的熔融温度,以促进铁电相的形成。在本发明的一实例中,可以在135℃下将500nm厚的PVDF膜层退火1分钟至24小时。After coating, the film can be annealed to evaporate the solvent and recrystallize the polymer chains into grains. The annealing temperature should be lower than the melting temperature of the polymer to promote the formation of the ferroelectric phase. In an example of the present invention, the PVDF film layer with a thickness of 500 nm can be annealed at 135° C. for 1 minute to 24 hours.
所得的薄膜聚合物层可以是1纳米至1毫米厚,例如约100纳米至约2000纳米厚。The resulting thin film polymer layer can be from 1 nanometer to 1 millimeter thick, for example from about 100 nanometers to about 2000 nanometers thick.
在退火之后,通过在整个膜上施加电场,铁电聚合物膜中的偶极子可垂直于石墨烯对准。可以通过诸如(但不限于)使用外部电极在其上施加电压或通过使聚合物表面电离的方法来施加电场。根据设置,可以在单个过程中完成退火和极化。根据本发明的一种版本,极化铁电聚合物可以包括对聚合物层施加外电场,例如包括电场强度为约50V/μm至约500V/μm的外电场;并且电极化铁电聚合物可以包括电离聚合物的表面,例如在约1kV/cm至约10kV/cm的电压下电离。After annealing, the dipoles in the ferroelectric polymer film can be aligned perpendicular to the graphene by applying an electric field across the film. The electric field can be applied by methods such as, but not limited to, applying a voltage across it using external electrodes or by ionizing the polymer surface. Depending on the setup, annealing and poling can be done in a single process. According to one version of the invention, polarizing the ferroelectric polymer may comprise applying an external electric field to the polymer layer, for example comprising an external electric field with an electric field strength of from about 50 V/μm to about 500 V/μm; and electrically polarizing the ferroelectric polymer may A surface comprising a polymer is ionized, for example, at a voltage of about 1 kV/cm to about 10 kV/cm.
极化方向优选使得铁电聚合物的氟原子朝向石墨烯表面对准。The polarization direction is preferably such that the fluorine atoms of the ferroelectric polymer are aligned towards the graphene surface.
在使用PVDF作为铁电聚合物的情况下,可能需要约100V/μm的场来对准偶极子。在本发明的一实例中,可以通过以6kV/cm的电压电离聚合物的表面来对准在约500nm厚的PVDF膜中的偶极子。极化的铁电聚合物层可以包含约5μC/cm2至约10μC/cm2的剩余极化,例如约7.5μC/cm2。In the case of using PVDF as the ferroelectric polymer, a field of about 100 V/μm may be required to align the dipoles. In an example of the present invention, dipoles in an approximately 500 nm thick PVDF film can be aligned by ionizing the surface of the polymer at a voltage of 6 kV/cm. The polarized ferroelectric polymer layer may comprise a remanent polarization of about 5 μC/cm 2 to about 10 μC/cm 2 , for example about 7.5 μC/cm 2 .
3)剥离石墨烯/铁电聚合物复合材料3) Exfoliated graphene/ferroelectric polymer composites
根据本发明的一种版本,可通过施加垂直于生长基底的剥离力来完成从生长基底剥离石墨烯/铁电聚合物。According to one version of the invention, exfoliation of the graphene/ferroelectric polymer from the growth substrate can be accomplished by applying an exfoliation force perpendicular to the growth substrate.
根据本发明的一种版本,至少约85J/m2的剥离力会实现可靠的无缺陷剥离(参见图5)。较高的剥离力也可以实现可靠的剥离。根据本发明的一种版本,用于剥离石墨烯的临界力,即发生石墨烯剥离的最小力等于或低于85J/m2。According to one version of the invention, a peel force of at least about 85 J/m 2 results in reliable defect-free peeling (see FIG. 5 ). Higher peel forces also enable reliable peeling. According to one version of the invention, the critical force for exfoliating graphene, ie the minimum force at which graphene exfoliation occurs, is equal to or lower than 85 J/m 2 .
低于临界力的剥离力可能导致石墨烯中出现裂纹。然而,通过充分控制所施加的力或足够高的剥离能量,以较小的力可靠地无缺陷剥离仍然是可能的。A peeling force below the critical force may lead to cracks in graphene. However, reliable defect-free peeling with small forces is still possible by adequately controlling the applied force or sufficiently high peeling energy.
可以通过例如(但不限于)手动剥离和轧制比基底-石墨烯-聚合物界面处的临界粘附能量更强地附着到PVDF(或石墨烯基底)的材料的过程来完成剥离。Exfoliation can be accomplished by processes such as (but not limited to) manual exfoliation and rolling of materials that adhere to PVDF (or graphene substrate) stronger than the critical adhesion energy at the substrate-graphene-polymer interface.
在本发明的一个实例中,铁电聚合物可以足够厚以使得能够通过使用一些工具(诸如金属镊子)保持铜或石墨烯/铁电聚合物复合材料来从铁电聚合物/石墨烯/基底堆叠直接手动快速剥离铜箔。In one example of the present invention, the ferroelectric polymer can be thick enough to enable the removal of the ferroelectric polymer/graphene/substrate from the The stack is directly peeled off the copper foil by hand quickly.
在本发明的其它实例中,可将诸如聚合物箔、环氧树脂或胶带的附加支持体附着到石墨烯基底,附着到铁电聚合物或附着到两者以便于剥离。在这些情况下,附加支持体与任一表面的结合必须比石墨烯与其基底的粘附力更强。在本发明的一实例中,其中基底为铜箔,支持体可以是粘附强度为3.7N/20mm的热释放胶带(参见图5)。胶带与极化的铁电层之间的粘附强度随着剥离速度增加,并且从基底剥离石墨烯需要至少0.15m/s,其粘附强度为85J/m2。由于热释放胶带不能充分粘附到极化的铁电层来诱导石墨烯剥离,即铁电层和石墨烯保留在铜箔上,因此在剥离速度不足的情况下,石墨烯剥离不成功。In other examples of the invention, an additional support such as a polymer foil, epoxy, or tape can be attached to the graphene substrate, to the ferroelectric polymer, or to both to facilitate release. In these cases, the additional support must bind to either surface more strongly than the graphene adheres to its substrate. In an example of the present invention, wherein the substrate is copper foil, the support may be a thermal release tape with an adhesion strength of 3.7 N/20 mm (see FIG. 5 ). The adhesion strength between the tape and the polarized ferroelectric layer increases with the peeling speed, and at least 0.15 m/s is required to peel graphene from the substrate with an adhesion strength of 85 J/m 2 . Graphene exfoliation was unsuccessful in the case of insufficient exfoliation speed because the thermal release tape could not adhere sufficiently to the polarized ferroelectric layer to induce graphene exfoliation, i.e., the ferroelectric layer and graphene remained on the copper foil.
在基底的两个表面上均生长石墨烯的情况下,可以在基底的两侧同时完成转移工艺,以在每个表面上剥离石墨烯。In the case of growing graphene on both surfaces of the substrate, the transfer process can be done simultaneously on both sides of the substrate to exfoliate the graphene on each surface.
根据本发明的一种版本的方法与从基底剥离复合材料之前的石墨烯和/或铁电层的图案化相匹配。根据图案化方法,剥离方法的益处可能仅适用于未图案化的石墨烯/铁电聚合物复合材料。例如,如果在剥离之前,从基底中去除了初始复合材料的某一区域,则该区域将不会被剥离。A version of the method according to the invention is matched to the patterning of the graphene and/or ferroelectric layers prior to exfoliation of the composite from the substrate. Depending on the patterning method, the benefits of the exfoliation method may only be applicable to unpatterned graphene/ferroelectric polymer composites. For example, if an area of the initial composite material is removed from the substrate prior to stripping, that area will not be stripped.
剥离之后,石墨烯的连续性是可以用于验证石墨烯剥离方法的参数,因为石墨烯层中的任何机械缺陷(裂纹)会不可逆地降低剥离的石墨烯的性质。图6通过各种技术对石墨烯剥离的产率进行了比较。After exfoliation, the continuity of the graphene is a parameter that can be used to validate the graphene exfoliation method, since any mechanical defects (cracks) in the graphene layer will irreversibly degrade the properties of the exfoliated graphene. Figure 6 compares the yields of graphene exfoliation by various techniques.
在图6的左图中,当根据本发明的一种版本使用聚甲基丙烯酸甲酯膜按照剥离参数从铜箔剥离石墨烯时,除了不使用铁电聚合物(其中进行上文描述的步骤1和3,但使用具有PMMA的石墨烯涂层代替步骤2),仅剥离石墨烯薄片。这是不成功的转移。其是由非铁电聚合物与石墨烯的粘附力弱于石墨烯与其基底的粘附力造成的。In the left panel of Figure 6, when graphene is exfoliated from copper foil according to a version of the invention using a polymethylmethacrylate film according to the exfoliation parameters, except that no ferroelectric polymer is used (in which the steps described above are performed 1 and 3, but using a graphene coating with PMMA instead of step 2), exfoliating only the graphene flakes. This is an unsuccessful transfer. It is caused by the weaker adhesion of non-ferroelectric polymers to graphene than graphene to its substrate.
在图6的中心图中,当不完全按照根据本发明的一种版本的方法时(进行前面的步骤1-3,但省略PVDF涂覆或极化的一些步骤),发生石墨烯剥离,但转移的产率不是最大,因为石墨烯剥离不均匀并且石墨烯层中出现机械缺陷。这是石墨烯的非连续转移。在这种情况下,使用了铁电聚合物,但未对其进行处理,使得其分子形成晶粒和/或这些晶粒中的偶极子不垂直于石墨烯对准。In the center panel of Fig. 6, when the method according to one version of the invention is not followed exactly (performing the previous steps 1-3, but omitting some steps of PVDF coating or poling), graphene exfoliation occurs, but The yield of the transfer is not maximal because the graphene exfoliation is not uniform and mechanical defects appear in the graphene layer. This is a discontinuous transfer of graphene. In this case, a ferroelectric polymer was used, but it was not treated so that its molecules formed grains and/or the dipoles in these grains were not aligned perpendicular to the graphene.
由于石墨烯的不连续性,此处认为这些结果不成功。然而,如果以几平方微米的范围显示剥离,则可认为这些结果是成功的。在该量级的长度中,石墨烯可以显示连续性。然而,如果验证不包括以下区域,诸如催化剂基底上的晶界、不同相邻晶粒上的石墨烯,以及与大面积/晶片规模制造相关的区域,则这种条件不应该验证用于大面积剥离石墨烯的方法。These results are considered unsuccessful here due to the discontinuity of graphene. However, these results can be considered successful if exfoliation is shown in the range of a few square microns. In lengths of this magnitude, graphene can exhibit continuity. However, such conditions should not be validated for large area if the validation does not include areas such as grain boundaries on catalyst substrates, graphene on distinct adjacent grains, and areas relevant for large area/wafer scale fabrication. Method for exfoliating graphene.
在图6的右图中,当使用根据本发明的一种版本的方法时,实现了石墨烯的完全及无缺陷转移。从对剥离后石墨烯的连续性(可检测的最小缺陷尺寸为0.5μm2)进行的统计分析得出了以下结论,就标准转移条件而言,缺陷量得以显著改善,并且剥离的石墨烯覆盖平方毫米面积上的样品表面的99.5%以上。图7是示出使用根据本发明的一种版本的方法并使用标准石墨烯转移工艺剥离石墨烯之后的缺陷(裂纹)的统计比较的一组图表:左图示出根据其面积的裂纹的统计分布,且右图为总裂纹面积统计的条形图。In the right panel of Figure 6, a complete and defect-free transfer of graphene is achieved when using a version of the method according to the invention. From the statistical analysis of the continuity of the exfoliated graphene (minimum detectable defect size of 0.5 μm 2 ), it was concluded that the number of defects was significantly improved with respect to the standard transfer conditions, and the exfoliated graphene covered More than 99.5% of the sample surface on a square millimeter area. Figure 7 is a set of graphs showing a statistical comparison of defects (cracks) after exfoliation of graphene using a version of the method according to the invention and using a standard graphene transfer process: the left graph shows the distribution of cracks according to their area Statistical distribution, and the right picture is a bar chart of total crack area statistics.
此外,当使用根据本发明的一种版本的方法时,可以与主石墨烯层一起剥离多达10个或更多的多层的堆叠。这些石墨烯多层是石墨烯生长方法固有的。图6右图的光学图像中的较暗点对应于与连续石墨烯层一起剥离的多层石墨烯。Furthermore, stacks of up to 10 or more multilayers can be exfoliated together with the main graphene layer when using a version of the method according to the invention. These graphene multilayers are intrinsic to the graphene growth method. The darker spots in the optical image of the right panel of Fig. 6 correspond to multilayer graphene exfoliated together with continuous graphene layers.
根据本发明的一种版本的方法提供了一种用于剥离石墨烯的方法,该方法产生连续且无缺陷的石墨烯。The method according to one version of the invention provides a method for exfoliating graphene that produces continuous and defect-free graphene.
下文提供其它示例性版本。图8是示出根据本发明的一种版本的直接剥离转移方法的用途的示意图。如下文进一步描述的,图8中的图(a)示出了石墨烯/铁电聚合物810/830;图8中的图(b)示出了转移基底840上的石墨烯-铁电聚合物810/830,其中石墨烯810面朝上;图8中的图(c)示出了目标基底850上的石墨烯-铁电聚合物810/830,其中石墨烯810面朝下;图8中的图(d)示出了目标表面850上的石墨烯810。Other exemplary versions are provided below. Figure 8 is a schematic diagram illustrating the use of a direct peel transfer method according to a version of the present invention. As described further below, graph (a) in FIG. 8 shows graphene/ferroelectric polymer 810/830; graph (b) in FIG. 8 shows graphene-ferroelectric polymer on transfer substrate 840 Object 810/830, wherein graphene 810 faces up; Figure (c) in Figure 8 shows graphene-ferroelectric polymer 810/830 on target substrate 850, wherein graphene 810 faces down; Figure 8 Panel (d) in FIG. 2 shows graphene 810 on a target surface 850 .
A)石墨烯/极化的铁电聚合物-参见图8中的图(a)A) Graphene/Polared Ferroelectric Polymer - see panel (a) in Figure 8
图8中的图(a)的示例性方法可以产生连续的复合材料。The exemplary method of panel (a) in Figure 8 can produce a continuous composite material.
-由于来自PVDF膜830的掺杂,石墨烯810具有低的薄层电阻。与其它掺杂方法相反,静电掺杂(通过PVDF)随时间稳定。- Graphene 810 has low sheet resistance due to doping from PVDF film 830 . In contrast to other doping methods, electrostatic doping (by PVDF) is stable over time.
-将石墨烯810暴露,因此可以对其进行后处理。- Exposes the graphene 810 so it can be post-processed.
-PVDF石墨烯810无残留物,其连续性>99%。-PVDF Graphene 810 has no residue and its continuity is >99%.
-石墨烯810清洁无污染。- Graphene 810 is clean and pollution-free.
用于该实例的工艺按照上文的描述进行。The process used for this example was as described above.
B)具有转移基底的石墨烯/极化的铁电聚合物-参见图8中的图(b)B) Graphene/polarized ferroelectric polymer with transferred substrate - see panel (b) in Figure 8
图8中的图(b)的示例性方法可以在基底的顶部产生连续的复合材料,其中石墨烯810面朝上。The exemplary method of panel (b) in FIG. 8 can produce a continuous composite material on top of the substrate with the graphene 810 facing upwards.
-由于来自PVDF膜830的掺杂,石墨烯810具有低的薄层电阻。与其它掺杂方法相反,静电掺杂(通过PVDF)随时间稳定。- Graphene 810 has low sheet resistance due to doping from PVDF film 830 . In contrast to other doping methods, electrostatic doping (by PVDF) is stable over time.
-将石墨烯810暴露,因此可以对其进行后处理。- Exposes the graphene 810 so it can be post-processed.
-PVDF石墨烯810无残留物,其连续性>99%。-PVDF Graphene 810 has no residue and its continuity is >99%.
-石墨烯810清洁无污染。- Graphene 810 is clean and pollution-free.
该工艺可以是:The process can be:
-如在前述实例中所描述的,在第一基底(石墨烯基底)上形成石墨烯810。- Graphene 810 is formed on the first substrate (graphene substrate) as described in the previous examples.
-如在前述实例中所描述的,在石墨烯上形成铁电聚合物层830。- A ferroelectric polymer layer 830 is formed on the graphene as described in the preceding examples.
-将第二基底(也称为转移基底)840附着在极化的铁电层830(第二基底/铁电体/石墨烯/基底)上,例如(但不限于)聚对苯二甲酸乙二醇酯(PET)箔。第二基底840优选与铁电膜830紧密接触。基底840与铁电膜830之间的粘附强度为85J/m2或更高,使得能够剥离石墨烯810,而不从铁电膜830释放第二基底840。当第二基底与极化的粘附强度为85J/m2或更高时,剥离速度可以不受限制。当第二基底与极化的粘附强度将低于85J/m2时,可以通过高速剥离来获得临界粘附强度,因为界面处的粘附力将取决于该参数。- attaching a second substrate (also referred to as transfer substrate) 840 on the polarized ferroelectric layer 830 (second substrate/ferroelectric/graphene/substrate), such as (but not limited to) polyethylene terephthalate Glycol ester (PET) foil. The second substrate 840 is preferably in close contact with the ferroelectric film 830 . The adhesion strength between the substrate 840 and the ferroelectric film 830 was 85 J/m 2 or higher, so that the graphene 810 could be peeled off without releasing the second substrate 840 from the ferroelectric film 830 . When the adhesion strength of the second substrate to the polarization is 85 J/m 2 or higher, the peeling speed may not be limited. When the adhesion strength of the second substrate with polarization will be lower than 85 J/ m2 , the critical adhesion strength can be obtained by high-speed peeling, because the adhesion force at the interface will depend on this parameter.
-如前述实例所描述的,从石墨烯基底剥离第二基底/铁电体/石墨烯。-Exfoliation of the second substrate/ferroelectric/graphene from the graphene substrate as described in the preceding examples.
C)目标基底上的极化的铁电聚合物/石墨烯-参见图8中的图(c)C) Polarized ferroelectric polymer/graphene on target substrate - see panel (c) in Figure 8
图8中的图(c)的示例性方法可以在基底的顶部产生连续的复合材料,石墨烯810面向目标基底。The exemplary method of panel (c) in FIG. 8 can produce a continuous composite material on top of the substrate, with the graphene 810 facing the target substrate.
-由于来自PVDF膜830的掺杂,石墨烯810具有低的薄层电阻。与其它掺杂方法相反,静电掺杂(通过PVDF)随时间稳定。- Graphene 810 has low sheet resistance due to doping from PVDF film 830 . In contrast to other doping methods, electrostatic doping (by PVDF) is stable over time.
-在除去一个或多个周围层之后,可以将石墨烯810的表面暴露,因此可以将其进行后处理。- After removal of one or more surrounding layers, the surface of the graphene 810 can be exposed so it can be post-processed.
-PVDF石墨烯810没有残留物,其连续性>99%。-PVDF Graphene 810 has no residue and its continuity is >99%.
-石墨烯810清洁无污染。- Graphene 810 is clean and pollution-free.
该工艺可以是:The process can be:
-如前述实例中所描述的,在第一基底上形成石墨烯810(图3中的石墨烯基底320)。- Graphene 810 is formed on a first substrate (graphene substrate 320 in FIG. 3 ) as described in the preceding examples.
-如在前述实例中所描述的,在石墨烯810上形成铁电聚合物层830。- A ferroelectric polymer layer 830 is formed on the graphene 810 as described in the previous examples.
-将第二基板840(图(c)中未示出)附着在极化的铁电聚合物层830(第二基底/铁电体/石墨烯/基底)上。在该实例中,第二基底840与下一个工艺步骤中的石墨烯810的剥离相匹配,并且稍后可以被释放。第二基底840的实例是热释放胶带。第二基底840必需与铁电膜830紧密接触。基底840与铁电膜830之间的粘附强度为85J/m2或更高,使得能够剥离石墨烯810,而不从铁电膜830释放第二基底840。当第二基底与极化的粘附强度低于85J/m2时,可以通过高速剥离来实现该粘附强度。在本发明的的一个实例中,其中基底是铜箔,支持体可以是粘附强度为3.7N/20mm的热释放胶带(参见图5)。胶带与极化的铁电层之间的粘附强度随着剥离速度增加,并且从基底剥离石墨烯需要至少0.15m/s,其粘附强度为85J/m2。由于热释放胶带不能充分粘附到极化的铁电层以诱导石墨烯剥离,即铁电层和石墨烯保留在铜箔上,因此在剥离速度不足的情况下,石墨烯剥离不成功。- Attaching a second substrate 840 (not shown in figure (c)) on the poled ferroelectric polymer layer 830 (second substrate/ferroelectric/graphene/substrate). In this example, the second substrate 840 is compatible with the exfoliation of the graphene 810 in the next process step and can be released later. An example of the second substrate 840 is heat release tape. The second substrate 840 must be in close contact with the ferroelectric film 830 . The adhesion strength between the substrate 840 and the ferroelectric film 830 was 85 J/m 2 or higher, so that the graphene 810 could be peeled off without releasing the second substrate 840 from the ferroelectric film 830 . When the adhesion strength of the second substrate to the polarization is lower than 85 J/m 2 , this adhesion strength can be achieved by high-speed peeling. In an example of the present invention, wherein the substrate is copper foil, the support may be a thermal release tape with an adhesion strength of 3.7N/20mm (see FIG. 5 ). The adhesion strength between the tape and the polarized ferroelectric layer increases with the peeling speed, and at least 0.15 m/s is required to peel graphene from the substrate with an adhesion strength of 85 J/m 2 . Graphene exfoliation was unsuccessful in the case of insufficient exfoliation speed because the thermal release tape could not adhere sufficiently to the polarized ferroelectric layer to induce graphene exfoliation, i.e., the ferroelectric layer and graphene remained on the copper foil.
-如前述实例所描述的,从基底剥离第二基底/铁电体/石墨烯。- Peel off the second substrate/ferroelectric/graphene from the substrate as described in the previous example.
-将第二基底/铁电聚合物/石墨烯堆叠施加在第三基底(目标基底)850上。在第二基底840是热释放胶带的情况下,通过施加10MPa的压力使堆叠的石墨烯侧与第三基底850紧密接触。- Applying the second substrate/ferroelectric polymer/graphene stack on the third substrate (target substrate) 850 . In the case that the second substrate 840 is a thermal release tape, the graphene side of the stack was brought into close contact with the third substrate 850 by applying a pressure of 10 MPa.
-从聚合物层/石墨烯/第三基底释放第二基底840。在第二基底840是热释放胶带的情况下,将堆叠加热至高于胶带的释放温度5℃的温度(通常为90至150℃),同时保持先前施加的压力。一旦达到释放温度,缓慢地除去胶带以防止损坏极化的铁电聚合物/石墨烯。- releasing the second substrate 840 from the polymer layer/graphene/third substrate. Where the second substrate 840 is a thermal release tape, the stack is heated to a temperature 5°C above the release temperature of the tape (typically 90 to 150°C) while maintaining the previously applied pressure. Once the release temperature is reached, remove the tape slowly to prevent damage to the polarized ferroelectric polymer/graphene.
D)目标基底上的石墨烯-参见图8中的图(d)D) Graphene on target substrate - see panel (d) in Figure 8
图8中的图(d)的示例性方法可以在目标基底850的顶部产生连续的石墨烯810。The exemplary method of panel (d) in FIG. 8 can produce a continuous graphene 810 on top of a target substrate 850 .
-将石墨烯810暴露,因此可以对其进行后处理。- Exposes the graphene 810 so it can be post-processed.
-PVDF石墨烯810无残留物,其连续性>99%。-PVDF Graphene 810 has no residue and its continuity is >99%.
-石墨烯810清洁无污染。- Graphene 810 is clean and pollution-free.
该工艺可以是:The process can be:
-如前述实例中所描述的,在第一基底上形成石墨烯810(图3的石墨烯基底320)。- Graphene 810 (graphene substrate 320 of FIG. 3 ) is formed on a first substrate as described in the preceding examples.
-在石墨烯上形成铁电聚合物层830(参见图(a)至(c))。如前述实例所述。- Formation of a ferroelectric polymer layer 830 on the graphene (see Figures (a) to (c)). As described in the previous example.
-将第二基底840附着在铁电膜(第二基底/铁电体/石墨烯/基底)上(参见图(b))。如前述实例所述。- Attaching the second substrate 840 on the ferroelectric film (second substrate/ferroelectric/graphene/substrate) (see figure (b)). As described in the previous example.
-从石墨烯基底320剥离第二基底/铁电体/石墨烯(参见图3)。如前述实例所述。- Peel off the second substrate/ferroelectric/graphene from the graphene substrate 320 (see Figure 3). As described in the previous example.
-将第二基底/铁电聚合物/石墨烯堆叠施加在第三基底(目标基底)850上。如前述实例所述。- Applying the second substrate/ferroelectric polymer/graphene stack on the third substrate (target substrate) 850 . As described in the previous example.
-从聚合物层/石墨烯/第三基底释放第二基底840(参见图(b))。如前述实例所述。- Release of the second substrate 840 from the polymer layer/graphene/third substrate (see figure (b)). As described in the previous example.
-去除铁电聚合物层830(参见图(a)至(c))。可以在铁电聚合物的溶剂中除去聚合物,例如如果是PVDF,则可以使用丙酮或二甲基甲酰胺来溶解聚合物。可使用额外的溶剂清洗从用于溶解聚合物的溶剂中除去残留物。此外,当退火条件与基底/石墨烯堆叠相匹配时,可以在去除聚合物膜、其残留物或来自溶剂清洗步骤的残留物的温度和气氛下将样品退火。例如,当基底是硅/氧化硅晶片时,可在350℃下,在氩气和氢气的气氛中将堆叠退火。- Removal of the ferroelectric polymer layer 830 (see Figures (a) to (c)). The polymer can be removed in a solvent for the ferroelectric polymer, for example in the case of PVDF acetone or dimethylformamide can be used to dissolve the polymer. An additional solvent wash can be used to remove residue from the solvent used to dissolve the polymer. Furthermore, when the annealing conditions are matched to the substrate/graphene stack, the samples can be annealed at a temperature and atmosphere that removes the polymer film, its residues, or residues from solvent cleaning steps. For example, when the substrate is a silicon/silicon oxide wafer, the stack can be annealed at 350°C in an atmosphere of argon and hydrogen.
根据本发明的一种版本,可以提供许多优点,例如如下:According to a version of the invention, many advantages can be provided, such as the following:
A)与一般转移方法相比A) Compared to general transfer methods
根据本发明的一种版本的方法不包括用于从石墨烯基底释放石墨烯的化学品。A version of the method according to the invention does not include the chemicals used to release the graphene from the graphene substrate.
-当从基底中以化学或电化学方式释放石墨烯时,石墨烯-基底界面处的石墨烯不会被污染。- Graphene at the graphene-substrate interface is not contaminated when the graphene is chemically or electrochemically released from the substrate.
例如,当石墨烯的基底是铜并且使用过硫酸铵化学去除铜时,来自溶液的离子将在石墨烯处被吸收,其载流子密度浓度变化可能高达1012cm-2。当剥离石墨烯时,可以避免这种污染。For example, when the substrate of graphene is copper and ammonium persulfate is used to chemically remove the copper, ions from the solution will be absorbed at the graphene with carrier density concentration variations as high as 10 12 cm −2 . This contamination can be avoided when exfoliating graphene.
-因此,可以将石墨烯施加到基底上,而石墨烯与新基底之间无任何污染。这在集成电路应用中对高流通量的设备制造和性能是非常重要。- Thus, graphene can be applied to the substrate without any contamination between the graphene and the new substrate. This is very important for high throughput device fabrication and performance in integrated circuit applications.
通常,在现有技术中,采用过硫酸铵蚀刻铜基底来分离石墨烯将导致产生残留物,该残留物不可控制地以~1012cm-2的掺杂剂掺杂石墨烯。相比之下,在要求无掺杂石墨烯或掺杂精确浓度的石墨烯的设备中,根据本发明的一种版本的方法能实现其上无任何掺杂剂的石墨烯。Typically, in the prior art, etching copper substrates with ammonium persulfate to isolate graphene would result in residues that uncontrollably dope graphene with ~10 12 cm −2 dopants. In contrast, in devices requiring undoped graphene or doped graphene at precise concentrations, a version of the method according to the invention enables graphene without any dopant thereon.
根据本发明的一种版本的方法是单一步骤(single-step)且进行速度快。A version of the method according to the invention is single-step and proceeds quickly.
-化学或电化学去除工艺包括花费数小时的蚀刻、漂洗和干燥步骤,而根据本发明的一种版本的剥离是一步法。- The chemical or electrochemical removal process involves etching, rinsing and drying steps which take hours, whereas a version of stripping according to the invention is a one-step process.
报道的最快的转移工艺采用电化学层离方法,其以~l mm/s的速率转移。根据本发明的一种版本的方法的速度不受限制。根据本发明的一种版本的剥离以0.15m/s和高于0.15m/s的速度发生,例如在约0.5m/s的范围内,从而实现真正的快速转移。The fastest reported transfer process employs an electrochemical delamination method, which transfers at a rate of ~1 mm/s. The speed of the method according to one version of the invention is not limited. The peeling according to one version of the invention takes place at speeds of 0.15 m/s and above, for example in the range of about 0.5 m/s, enabling really fast transfers.
根据本发明的一种版本的方法不产生残留物:A version of the method according to the invention produces no residue:
-由于在材料的处理中不包括化学或电化学蚀刻步骤,因此无化学残留产物需要处理。因此,根据本发明的一种版本的方法会产生在工业上更可持续的过程。- Since no chemical or electrochemical etching steps are included in the processing of the material, there are no chemical residual products to deal with. Thus, a version of the method according to the invention results in an industrially more sustainable process.
B)与其它剥离方法的比较B) Comparison with other stripping methods
在根据本发明的一种版本的方法中,可以应用以下优点:In a version of the method according to the invention, the following advantages can be applied:
PVDF与石墨烯之间的相互作用可以由范德华力与极化诱导的相互作用驱动,而不是通过任何化学的吸收/相互作用。The interaction between PVDF and graphene can be driven by van der Waals forces and polarization-induced interactions rather than by any chemical absorption/interaction.
-不存在石墨烯的化学或物理改性,因此,其结构和特性可以保持不变。- There is no chemical or physical modification of graphene, therefore, its structure and properties can remain unchanged.
对极化的铁电聚合物层进行布置和极化,以在石墨烯层与生长基底之间产生相对于石墨烯层与极化的铁电聚合物层之间的粘附力而言降低的相对粘附力。可以对极化的铁电聚合物层进行布置和极化以增强铁电聚合物层与石墨烯的粘附力,以及铁电聚合物和石墨烯复合材料与基底之间的粘附力。arranging and polarizing the polarized ferroelectric polymer layer to produce a reduced adhesion between the graphene layer and the growth substrate relative to the adhesion between the graphene layer and the polarized ferroelectric polymer layer relative adhesion. The polarized ferroelectric polymer layer can be arranged and polarized to enhance the adhesion of the ferroelectric polymer layer to the graphene, and the adhesion of the ferroelectric polymer and graphene composite to the substrate.
-该方法可以实现从基底中可靠地剥离石墨烯,可以使缺陷的可能性最小化,从而提高剥离产率。- The method can achieve reliable exfoliation of graphene from the substrate, which can minimize the possibility of defects, thereby increasing the exfoliation yield.
根据本发明的一种文本的方法,通过实验证明了在对大面积CVD石墨烯有重要意义的区域上的石墨烯剥离的统计数据。其它报道的机械剥离工艺不能在这种CVD石墨烯区域上验证其方法。According to the method of a text of the present invention, the statistics of graphene exfoliation on regions important for large-area CVD graphene are experimentally demonstrated. Other reported mechanical exfoliation processes cannot validate their methods on such CVD graphene domains.
根据本发明的一种版本的方法,不需要在该方法中熔化任何聚合物材料。According to one version of the method of the invention, there is no need to melt any polymer material in the method.
-由于石墨烯与聚合物之间发生反应,因此不会诱导改性。- No modification is induced due to the reaction between graphene and polymer.
-该过程可与具有热、压力和/或电压限制的应用热相容。- The process is thermally compatible with applications with heat, pressure and/or voltage constraints.
可能的工业应用:Possible industrial applications:
根据本发明的一种版本的可能的工业应用包括:Possible industrial applications according to a version of the invention include:
-制造基于石墨烯的集成电路- Manufacture of graphene-based integrated circuits
-制造含有基于石墨烯的柔性透明导电膜的设备- Fabrication of devices containing graphene-based flexible transparent conductive films
-在包括化学封装的应用中,采用石墨烯复合材料涂覆给定的表面进行封装,例如对水蒸汽或其它气体的屏障以及磁和电屏蔽。- Coating a given surface with a graphene composite for encapsulation in applications including chemical encapsulation, such as barriers to water vapor or other gases and magnetic and electrical shielding.
定义:definition:
如本文所使用的,“石墨烯”是单层或多层石墨烯(例如,2至10层),优选例如通过类似化学气相沉积的方法在催化基底(诸如铜)上生长。催化基底可以是其它金属,包括镍、铂或钴,或已知催化石墨烯(包括锗)的其它材料。催化剂可以包含在其它基底上的金属箔或金属薄膜。石墨烯可以是通过其它外延方法(例如通过加热碳化硅)获得的石墨烯。As used herein, "graphene" is single or multilayer graphene (eg, 2 to 10 layers), preferably grown on a catalytic substrate such as copper, eg, by methods like chemical vapor deposition. The catalytic substrate can be other metals, including nickel, platinum, or cobalt, or other materials known to catalyze graphene, including germanium. The catalyst may comprise metal foils or metal films on other substrates. Graphene may be graphene obtained by other epitaxy methods, for example by heating silicon carbide.
如本文所使用的,“基底”是指石墨烯生长在其上的基底,并且可以包括,例如,铜箔或膜以及已知对石墨烯生长起催化作用的任何其它材料。基底还可以指如上文所描述的用于从基底剥离极化的铁电聚合物膜和石墨烯复合材料的二级基底,并且能够将复合材料转移到目标基底。目标基底是指待将石墨烯转移到其上的基底。As used herein, "substrate" refers to a substrate on which graphene is grown, and may include, for example, copper foil or film as well as any other material known to catalyze graphene growth. A substrate may also refer to a secondary substrate as described above for exfoliating the polarized ferroelectric polymer film and graphene composite from the substrate and enabling transfer of the composite to a target substrate. The target substrate refers to the substrate onto which the graphene is to be transferred.
如本文所使用的,“铁电聚合物”是可对其进行处理以示出铁电特性的聚合物,即,其将在外电场中保持可以被反转或切换的永久电极化。铁电聚合物是含氟聚合物。铁电聚合物的实例是聚偏二氟乙烯、PVDF及其共聚物。一种这样的共聚物是聚[(偏二氟乙烯-共-三氟乙烯]、P(VDF-TrFE)。As used herein, a "ferroelectric polymer" is a polymer that can be treated to exhibit ferroelectric properties, ie, it will maintain a permanent electrical polarization that can be reversed or switched in an external electric field. Ferroelectric polymers are fluoropolymers. Examples of ferroelectric polymers are polyvinylidene fluoride, PVDF and copolymers thereof. One such copolymer is poly[(vinylidene fluoride-co-trifluoroethylene], P(VDF-TrFE).
虽然已参考本发明的示例性实施方案具体地示出并描述了本发明,但本领域技术人员应理解,在不脱离所附的权利要求书所包括的本发明的范围的情况下,可对形式和细节进行各种改变。While the invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that modifications may be made without departing from the scope of the invention as encompassed by the appended claims. Various changes were made in form and detail.
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| CN117241938A (en) * | 2021-03-12 | 2023-12-15 | 新加坡国立大学 | A multi-layer composite material |
| CN118908191A (en) * | 2024-07-23 | 2024-11-08 | 安徽格兰科新材料技术有限公司 | Method for in-situ construction of silicon-based/graphene/ferroelectric composite material on current collector and application thereof |
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| CN106587040B (en) * | 2016-12-29 | 2019-02-15 | 浙江合特光电有限公司 | The substrate transfer method of graphene film |
| GB2570127B (en) * | 2018-01-11 | 2022-06-22 | Paragraf Ltd | A method of making graphene structures |
| KR20210095645A (en) * | 2018-11-30 | 2021-08-02 | 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕 | How to transfer graphene from a metal substrate |
| KR102319610B1 (en) | 2020-04-10 | 2021-10-29 | 서울대학교산학협력단 | Graphene transfer method without residue |
| WO2022086449A1 (en) * | 2020-10-22 | 2022-04-28 | National University Of Singapore | Photodetector with ferroelectric polymer, quantum dots and graphene |
| KR102703806B1 (en) * | 2023-12-08 | 2024-09-04 | 한국화학연구원 | Dry electrode manufacturing method comprising a composite cathode active material coated or mixed with a polarized ferroelectric material, dry electrode and electrohcemical device including same |
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