CN1073530A - Tester of reverse second breakdown voltage for transistor - Google Patents
Tester of reverse second breakdown voltage for transistor Download PDFInfo
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- CN1073530A CN1073530A CN 92114463 CN92114463A CN1073530A CN 1073530 A CN1073530 A CN 1073530A CN 92114463 CN92114463 CN 92114463 CN 92114463 A CN92114463 A CN 92114463A CN 1073530 A CN1073530 A CN 1073530A
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- 230000015556 catabolic process Effects 0.000 title claims abstract description 52
- 230000002441 reversible effect Effects 0.000 title claims abstract description 48
- 238000012360 testing method Methods 0.000 claims abstract description 27
- 230000001681 protective effect Effects 0.000 claims description 4
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 238000007689 inspection Methods 0.000 abstract 1
- 238000007493 shaping process Methods 0.000 abstract 1
- 230000001960 triggered effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011076 safety test Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Abstract
Device of the present invention applies continuous impulse power to measured device, when reverse second breakdown voltage takes place when, detect strength by the reverse second breakdown voltage detecting device that is arranged in the base circuit, and after monostable, R-S trigger carries out reverse second breakdown voltage indication, reading, termination test sequence of operations.Meanwhile, the collector from measured device is provided with a cover independent protection circuit.Any negative edge that this electric circuit inspection occurs at collector, and protected, can realize nondestructive test at a high speed owing to what negative edge triggered.Again since this high speed holding circuit mistiming of the pulse shaping circuit that detects of intrinsic fine delay and SB detecting device radio frequency, make protection and SB indicate the two to be independent of each other.
Description
In general, the present invention relates to transistor absolute rating proving installation, more specifically say, relate to transistor reverse second breakdown voltage ENERGY E
SBProving installation.
As everyone knows, transistorized voltage breakdown can be divided into one and puncture and second breakdown, and wherein first breakdown is reversible and nondestructive punch-through; Second breakdown then is irreversible and causes the punch-through of transistor destruction.High frequency, high-speed power transistor are being usually to take place to puncture to burn phenomenon in load and the anti-inclined to one side circuit with the inductance, and this is often owing to be referred to as due to the generation of reverse second breakdown voltage.Yet, it is load and anti-inclined to one side duty that high frequency, high-speed power transistor exactly are widely used in again with the inductance, these application scenarios all if any: during the final stage off resonance of radio station, magnetic deflection amplifier (televisor line output state, radarscope final stage), Switching Power Supply, relay drive(r) stage, firing circuit or the like.For this reason, no matter for circuit design, still for the transistor manufacturing, reverse second breakdown voltage all is a very important parameters.
Fig. 1 is the typical circuit and the relevant with it waveform of transistor generation reverse second breakdown voltage.Wherein Fig. 1 a is a typical circuit, and Fig. 1 b is the waveform of driving pulse, and Fig. 1 c is the transistor collector voltage waveform of expression generation reverse second breakdown voltage, and Fig. 1 d is transistorized collector current waveform.Transistorized collector is by load inductance L and resistive component R thereof among Fig. 1 a
LBe connected to supply voltage V
CC, its base stage has power supply V
BEPass through resistance R
BECarry out partially anti-.Being connected to internal resistance simultaneously is R
1Impulse source Vi, transistorized grounded emitter, V
CEBe illustrated in driving pulse and drive the collector voltage of wave form varies down.Fig. 1 b represents the driving pulse sequence, gets one of them pulse (t
O-t
1) case illustrated that takes place as reverse second breakdown voltage.Fig. 1 d is the collector current waveform, because collector connects inductive load, at pulse-off moment t
2, collector current is index curve and slowly descends.The t of Fig. 1 c
oWith left half, collector voltage remains V
CO, t
oBe issued to saturatedly with right transistor in the driving of enough amplitude driving pulses, and present saturation voltage V
CESAt t
1Moment, transistor turn-offs, and collector is responded to a high voltage until the transistorized voltage V that keeps
CBX, this moment, electric current was also in higher level because collector is in high voltage, so reverse second breakdown voltage takes place, the feature that reverse second breakdown voltage takes place is that collector voltage falls, and base stage, collector are to producing significantly strength between the emitter simultaneously.Sign causes the size of the size of physical quantity of second breakdown or the physical quantity that transistor bears reverse second breakdown voltage with energy dimension tolerance, and promptly the reverse second breakdown voltage energy can be written as: E
SB=Llc
2/ 2
Wherein, L is the inductance value of the series inductance in the transistor collector circuit, and lc also can be referred to as reverse second breakdown voltage electric current l for the instantaneous collector current of reverse second breakdown voltage takes place
SB
Because reverse second breakdown voltage ENERGY E
SDBe a transistorized absolute rating, so realize that nondestructive test is the target that people sought always.Wherein authorized the test basis that No. 3371276 disclosed tester of reverse second breakdown voltage of United States Patent (USP) of P.Schiff have been established this parameter on February 27th, 1988.The device that P.Schiff proposes is that tested transistor is applied the follow-on test pulse that collector current 1c constantly increases, induce measured device reverse second breakdown voltage to occur, when in case appearance is the reverse second breakdown voltage of feature to produce strength, utilize to detect that one of trigger action that the energy of strength forms is monostable, this monostablely drives a clamp circuit again, this clamp circuit bypass measured device, the energy of its storage is discharged, thus the nondestructive test of realization reverse second breakdown voltage.
Yet the proving installation that P.Schiff proposes can be realized nondestructive test theoretically, and in fact this device needs the time delay of number microsecond by detecting strength to driving this a series of actions of clamp circuit protection measured device.In general, behind the transistor generation reverse second breakdown voltage, will damage in the hundreds of nanosecond is during several microseconds if do not add protection.Like this, measured device is not able to do in time protected as yet, does not live excessive energy and damages or destroyed owing to bearing.Thereby the device that P.Schiff proposes still can not be realized real nondestructive test.
The objective of the invention is provides the safety instrumentation of reverse second breakdown voltage by a kind of independent protection circuit.
Proving installation of the present invention is that tested transistorized collector is provided with inductive load (known electric sensibility reciprocal) and adjustable digital constant-current source, its base stage is provided with biasing resistor and reversed bias voltage source, in its base stage test pulse source and strength pick-up unit are set simultaneously, and detect a series of devices that comprise reverse second breakdown voltage indication, locking test constant current source behind the reverse second breakdown voltage, so that after testing reverse second breakdown voltage, realize the operation that obtains data and stop test.Meanwhile, the collector at measured device is provided with a cover independent protection system.This protection system is made up of negative edge detecting device, monostable and protection tube, after transistor is turned off, when collector voltage negative edge occurs at every turn, all be detected and drive one monostable, export a pulse and remove to drive protection tube, once the measured device protection.In case when reverse second breakdown voltage occurring,, also be detected, drive protection tube measured tube is applied the protection of releasing not reaching the negative edge (strength is followed in the back) that proper testing was occurred before the recurrence interval.Carry out the protection speed of a series of drivings after the detection strength of the speed of this protection and P.Schiff and compare, detect an edge certainly and want faster.So just realized the test of not damaged reverse second breakdown voltage.The protection system of certain detection negative edge of the present invention also has certain delay; but measured device is exactly left in this section delay for; make it reverse second breakdown voltage occur, strength occurs; the reverse second breakdown voltage testing circuit that is arranged on the measured tube base stage is activated; and carry out sequence of operations; and before device is damaged, promptly the energy in the measured device has been released, thereby realized safe test by independent protective of the present invention system.
Below in conjunction with accompanying drawing, the mode with preferred embodiment is described in more detail the present invention.
Fig. 1 is the typical circuit and the relevant with it waveform of transistor generation reverse second breakdown voltage.
Fig. 2 is the block diagram of tester of reverse second breakdown voltage of the present invention.
Fig. 3 is that label is the oscillogram of a～h critical component in the block diagram of Fig. 2.
Below with reference to Fig. 2, label is that the right output terminal of 1 R-S trigger starts whole test process when being changed to high level.This high level is opened gate circuit 2, gives driving circuit 4 and adjustable constant-flow source 5 respectively with the regulation pulsewidth of pulse producer 3 generations and the test pulse of dutycycle, applies pulse power in a synchronous manner tested transistor 6.With reference to Fig. 3, the pulse waveform after label a, b are respectively the output waveform of pulse producer and pass through gate circuit 2.Continuation is with reference to Fig. 2, and the base stage B of tested transistor 6 is provided with biasing resistor R
BEWith reversed bias voltage source V
BEThe collector C of measured tube is by inductance L (inductance value of this inductance is adjustable, and its inductance value is respectively known) and adjustable constant-flow source and V
CCLink to each other.As seen from the figure, the base stage of measured tube is connected with SB detecting device 7, and this detecting device is conventional radio frequency signal detector, and having not with sign, reverse second breakdown voltage takes place.Increase the output current in adjustable constant-flow source gradually, when detecting radiofrequency signal, it is 8 monostable A to label that a pulse is provided, and pulse signal of this monostable output is to the f input end of R-S trigger, its right output terminal h is changed to low level, finishes one time test process.The operation of this part parts can be represented by waveform d, e, the f of Fig. 3.Back delay a period of time appears in the test pulse that injects in base stage as can be seen from waveform d, strength occurred.After the SB detecting device detects this vibration, may be that positive pulse of output removes to trigger monostable A after several oscillation period, shown in waveform e.Negative pulse of monostable A output is to the f input end of R-S trigger, and as the waveform f of Fig. 3, making right output terminal h is low level.Thereby, put bright the opening of reverse second breakdown voltage pilot lamp H, reverse second breakdown voltage appears in indication, and closes gate circuit 2, stopping pulse input, the source output of shutoff adjustable constant-flow, the constant current source output current Ic data when noting the generation reverse second breakdown voltage automatically.And then pass through E
SB=LIc
2/ 2 formula calculate the reverse second breakdown voltage energy.
Further specify the independent protective circuit of tester of reverse second breakdown voltage of the present invention below in conjunction with Fig. 2, Fig. 3.With reference to Fig. 2, it is 9 negative edge detecting device that the collector C of measured device is connected with label, and this detecting device all has response to any voltage negative saltus step, and to trigger label be 10 monostable B, and it is 12 protection tube V that positive pulse g of monostable B output removes to trigger label
2(this protection tube can be a Large-power High-Speed degree transistor or fet) makes its conducting, and then to make label be 11 diode V
1Conducting makes the energy in the measured device 6 pass through diode V
1, protection tube V
2Release.Whether no matter reverse second breakdown voltage take place in the continuous impulse test process, whenever send a pulse, holding circuit is protected once.When reverse second breakdown voltage took place, shown in the waveform c of Fig. 3, reverse second breakdown voltage did not take place after injecting in first pulse; Behind second end-of-pulsing, the voltage of keeping of collector is kept soon, keeps holding time of voltage behind end-of-pulsing on being shorter than reverse second breakdown voltage has just taken place, and negative saltus step occurs, strength then occurred.The negative edge detecting device triggers monostable B, protection tube V negative edge moment (before vibration occurring) action at once occurring
2, diode V
1Measured device is implemented protection.Certainly because independent protective circuit delay time of the present invention and the mistiming of SB detector response time make whole test system both realize safety test, SB detecting device and even sequence of operations thereafter can be undertaken by normal mode.After a test process finishes, transfer low level from the positive pulse and the waveform h of the monostable as can be seen B output of figure g waveform to, stop test,, restart next test process until pressing reset switch S.
Claims (1)
- A kind of tester of reverse second breakdown voltage for transistor, the tested transistorized collector C of this device is connected with the adjustable constant-flow source by the variable inductor of known electric sensibility reciprocal, and the base stage of measured tube is provided with biasing resistor R BEWith anti-power supply V partially BEThe grounded emitter of measured tube; continuous test pulse is to send into base stage through gate circuit through the synchronous mode of driving circuit and collector current by pulse producer; this gate circuit is controlled by a R-S trigger; also be provided with the reverse second breakdown voltage detecting device in base stage; detect and drive monostable when characterizing reverse second breakdown voltage and the R-S trigger, carry out the reverse second breakdown voltage indication, stop test operation; it is characterized in that; be provided with the independent protective circuit at tested transistorized collector, this circuit comprises:The negative edge detecting device, any negative edge that the detected set electrode occurs; And export a pulse;Monostable trigger receives the pulse from the negative edge detecting device, exports a driving pulse;Protection tube, conducting under the pulsed drive of monostable output descends its collector or drain potential;Conduction pipe, this conduction pipe are connected between the collector or drain electrode of tested transistor AND gate protection tube, and this manages also conducting after the protection tube conducting, thus the energy in the tested transistor of releasing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92114463 CN1073530A (en) | 1992-12-19 | 1992-12-19 | Tester of reverse second breakdown voltage for transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92114463 CN1073530A (en) | 1992-12-19 | 1992-12-19 | Tester of reverse second breakdown voltage for transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1073530A true CN1073530A (en) | 1993-06-23 |
Family
ID=4946944
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92114463 Pending CN1073530A (en) | 1992-12-19 | 1992-12-19 | Tester of reverse second breakdown voltage for transistor |
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| CN (1) | CN1073530A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100495056C (en) * | 2003-02-20 | 2009-06-03 | 国际商业机器公司 | Method and system for testing integrated circuit with well |
| CN102435671A (en) * | 2010-09-29 | 2012-05-02 | 北京有色金属研究总院 | Test medium and test method for improving pulse breakdown performance of glass ceramic |
| CN102063513B (en) * | 2009-11-12 | 2012-07-11 | 上海华虹Nec电子有限公司 | Radio-frequency parameter simulation method for multi-unit radio-frequency transistor |
| CN103809096A (en) * | 2014-02-28 | 2014-05-21 | 成都先进功率半导体股份有限公司 | Triode oscillation device based on relay |
| CN111736053A (en) * | 2020-06-11 | 2020-10-02 | 徐州中矿大传动与自动化有限公司 | A circuit and method for detecting overvoltage breakdown characteristics of IGBT |
-
1992
- 1992-12-19 CN CN 92114463 patent/CN1073530A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100495056C (en) * | 2003-02-20 | 2009-06-03 | 国际商业机器公司 | Method and system for testing integrated circuit with well |
| CN102063513B (en) * | 2009-11-12 | 2012-07-11 | 上海华虹Nec电子有限公司 | Radio-frequency parameter simulation method for multi-unit radio-frequency transistor |
| CN102435671A (en) * | 2010-09-29 | 2012-05-02 | 北京有色金属研究总院 | Test medium and test method for improving pulse breakdown performance of glass ceramic |
| CN103809096A (en) * | 2014-02-28 | 2014-05-21 | 成都先进功率半导体股份有限公司 | Triode oscillation device based on relay |
| CN111736053A (en) * | 2020-06-11 | 2020-10-02 | 徐州中矿大传动与自动化有限公司 | A circuit and method for detecting overvoltage breakdown characteristics of IGBT |
| CN111736053B (en) * | 2020-06-11 | 2023-04-07 | 江苏国传电气有限公司 | Circuit and method for detecting overvoltage breakdown characteristic of IGBT |
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