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CN107287631A - Microelectrode and preparation method and application - Google Patents

Microelectrode and preparation method and application Download PDF

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CN107287631A
CN107287631A CN201710389146.3A CN201710389146A CN107287631A CN 107287631 A CN107287631 A CN 107287631A CN 201710389146 A CN201710389146 A CN 201710389146A CN 107287631 A CN107287631 A CN 107287631A
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microelectrode
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曾齐
吴天准
夏凯
孙滨
马克·霍默恩
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Shenzhen Institute of Advanced Technology of CAS
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Abstract

本发明公开了一种微电极及其制备方法和应用。本发明微电极包括基体和设置于所述基体上的微电极单元,在所述微电极单元外表面还结合有三维铂纳米层,在所述三维铂纳米层外表面还结合有电荷存储与注入增强层,其中,所述三维铂纳米层含有分布若干铂纳米锥体或铂纳米花的绒面,且所述电荷存储与注入增强层结合在所述绒面上。本发明微电极具有大的表面积,并有效降低微电极阻抗、增加电荷存储能力以及电荷注入能力等电化学性能,保证本发明微电极具有良好的生物兼容性及如机械稳定性与电化学稳定性等长期稳定性,从而提高本发明微电极的电刺激效率。本发明制备方法各步骤能够有效控制,从而保证了制备的微电极性能稳定,而且效率高,能够工业化生产。

The invention discloses a microelectrode, its preparation method and application. The microelectrode of the present invention includes a substrate and a microelectrode unit arranged on the substrate, a three-dimensional platinum nano-layer is also combined on the outer surface of the micro-electrode unit, and a charge storage and injection is also combined on the outer surface of the three-dimensional platinum nano-layer An enhancement layer, wherein the three-dimensional platinum nano-layer contains a suede surface distributed with several platinum nanocones or platinum nanoflowers, and the charge storage and injection enhancement layer is combined on the suede surface. The microelectrode of the present invention has a large surface area, and effectively reduces the impedance of the microelectrode, increases the electrochemical properties such as charge storage capacity and charge injection capacity, and ensures that the microelectrode of the present invention has good biocompatibility and such as mechanical stability and electrochemical stability. and other long-term stability, thereby improving the electrical stimulation efficiency of the microelectrode of the present invention. Each step of the preparation method of the invention can be effectively controlled, thereby ensuring stable performance of the prepared microelectrode, high efficiency, and industrial production.

Description

微电极及其制备方法与应用Microelectrode and its preparation method and application

技术领域technical field

本发明属于生物医学设备技术领域,具体的是涉及一种微电极及其制备方法与应用。The invention belongs to the technical field of biomedical equipment, and in particular relates to a microelectrode and its preparation method and application.

背景技术Background technique

神经刺激/记录电极作为最重要的植入式微器件之一,用以刺激神经组织或记录神经电信号,广泛用于神经生理、脑科学研究等生命科学领域,如观察神经行为或治疗失明、失聪、帕金森症、等神经障碍。为减小手术创伤,同时给临床提供更高的电刺激或记录效率,神经刺激/记录电极正朝着集成化和微型化的化方向发展——微电极阵列。然而,微电极的尺寸减小带来了电极阻抗增加、电容降低等性能问题,严重降低了微电极的安全刺激效率。目前,在不增加电极几何尺寸的情况下,主要是通过表面修饰的方式增加电极的有效表面积,并改善电极的机械性能和电化学性能。As one of the most important implantable microdevices, nerve stimulation/recording electrodes are used to stimulate nerve tissue or record nerve electrical signals, and are widely used in life science fields such as neurophysiology and brain science research, such as observing neural behavior or treating blindness and deafness , Parkinson's disease, and other neurological disorders. In order to reduce surgical trauma and provide higher electrical stimulation or recording efficiency to clinics, nerve stimulation/recording electrodes are developing toward integration and miniaturization—microelectrode arrays. However, the size reduction of microelectrodes brings performance problems such as increased electrode impedance and reduced capacitance, which seriously reduces the safe stimulation efficiency of microelectrodes. At present, without increasing the geometric size of the electrode, the effective surface area of the electrode is mainly increased by surface modification, and the mechanical and electrochemical properties of the electrode are improved.

目前主要通过在微电极表面沉积粗糙多孔材料的方法来达到上述目的。几种典型材料可归纳如下:1、在电极表面沉积铂黑,该镀层具有疏松多孔的优势,能明显降低电极电化学阻抗,但铂黑镀层中含有铅等有毒添加物,严重影响了其应用安全;2、在电极表面沉积一层粗糙或不规则的铂镀层来替换铂黑,该镀层虽然具有一定的粗糙镀,但其电化学阻抗仍较高,电荷存储能力较低,限制了其刺激效率;3、导电聚合物与碳纳米管的结合能在一定程度上提高其电荷存储和注入能力,但稳定性较差,在超声或电化学刺激过程中易脱落;4、另外还有硼掺杂的金刚石镀层对提高电化学性能有一定效果,但其高时间及经济成本都不利于其临床应用。At present, the above purpose is mainly achieved by depositing rough porous materials on the surface of microelectrodes. Several typical materials can be summarized as follows: 1. Platinum black is deposited on the surface of the electrode. The coating has the advantage of being loose and porous, and can significantly reduce the electrochemical impedance of the electrode. However, the platinum black coating contains toxic additives such as lead, which seriously affects its application. Safe; 2. Deposit a layer of rough or irregular platinum coating on the surface of the electrode to replace platinum black. Although the coating has a certain roughness, its electrochemical impedance is still high and its charge storage capacity is low, which limits its stimulation. Efficiency; 3. The combination of conductive polymer and carbon nanotubes can improve its charge storage and injection capabilities to a certain extent, but the stability is poor, and it is easy to fall off during ultrasonic or electrochemical stimulation; 4. In addition, boron doped The impurity diamond coating has a certain effect on improving the electrochemical performance, but its high time and economic cost are not conducive to its clinical application.

因此,目前微电极表面修饰方法得到的镀层均无法满足低阻抗、高电荷存储能力、高电荷注入能力以及长期稳定性的指标要求,如何降低微电极阻抗,提高电荷存储能力和高电荷注入能力以及工作的稳定性是本技术领域一直努力希望解决的技术问题。Therefore, the coatings obtained by the current microelectrode surface modification methods cannot meet the index requirements of low impedance, high charge storage capacity, high charge injection capacity and long-term stability. How to reduce the microelectrode impedance, improve charge storage capacity and high charge injection capacity and Work stability is a technical problem that the technical field has been trying to solve.

发明内容Contents of the invention

本发明的目的在于克服现有技术的上述不足,提供一种微电极及其制备方法,以解决现有微电极存在阻抗较高,电荷存储能力和电荷注入能力以及工作稳定性不理想的技术问题。The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a microelectrode and a preparation method thereof, to solve the technical problems of high impedance, charge storage capacity, charge injection capacity and unsatisfactory work stability of the existing microelectrode .

为了实现上述发明目的,本发明的一方面,提供了一种微电极。所述微电极包括基体和设置于所述基体上的微电极单元,在所述微电极单元外表面还结合有三维铂纳米层,在所述三维铂纳米层外表面还结合有电荷存储与注入增强层,其中,所述三维铂纳米层含有分布若干铂纳米锥体或铂纳米花的绒面,且所述电荷存储与注入增强层结合在所述绒面上。In order to achieve the purpose of the above invention, one aspect of the present invention provides a microelectrode. The microelectrode includes a substrate and a microelectrode unit arranged on the substrate, a three-dimensional platinum nanolayer is also combined on the outer surface of the microelectrode unit, and a charge storage and injection is also combined on the outer surface of the three-dimensional platinum nanolayer An enhancement layer, wherein the three-dimensional platinum nano-layer contains a suede surface distributed with several platinum nanocones or platinum nanoflowers, and the charge storage and injection enhancement layer is combined on the suede surface.

本发明的另一方面,提供了一种微电极的制备方法。所述微电极的制备方法包括如下步骤:Another aspect of the present invention provides a method for preparing a microelectrode. The preparation method of described microelectrode comprises the steps:

在设置于基体上的微电极单元外表面依次制备三维铂纳米层和电荷存储与注入增强层;其中,所述三维铂纳米层含有分布若干铂纳米锥体或铂纳米花的绒面,且所述电荷存储与注入增强层是结合在所述绒面上。A three-dimensional platinum nanolayer and a charge storage and injection enhancement layer are sequentially prepared on the outer surface of the microelectrode unit arranged on the substrate; wherein, the three-dimensional platinum nanolayer contains a suede surface distributed with several platinum nanocones or platinum nanoflowers, and the The charge storage and injection enhancement layer is combined on the suede surface.

本发明的又一方面,提供了一种本发明微电极在传感器、可穿戴设备或植入式器件中的应用。Another aspect of the present invention provides an application of the microelectrode of the present invention in sensors, wearable devices or implantable devices.

与现有技术相比,本发明微电极通过在微电极单元外表面依次设置三维铂纳米层和电荷存储与注入增强层,通过增设的两功能层结构的协同作用,使得本发明微电极具有大的表面积,并有效降低微电极阻抗、增加电荷存储能力以及电荷注入能力等电化学性能,保证本发明微电极具有良好的生物兼容性及如机械稳定性与电化学稳定性等长期稳定性,从而提高本发明微电极的电刺激效率。其中,三维铂纳米层结构起到中间粘附层的作用,极大地增加了本发明微电极的有效表面积,同时增加电荷存储与注入增强层与微电极单元外表面之间的结合力;电荷存储与注入增强层有效提高了电荷存储能力及电荷注入能力以及生物相容性。Compared with the prior art, the microelectrode of the present invention sequentially arranges a three-dimensional platinum nanolayer and a charge storage and injection enhancement layer on the outer surface of the microelectrode unit, and through the synergistic effect of the added two functional layer structures, the microelectrode of the present invention has a large The surface area of the microelectrode can effectively reduce the impedance of the microelectrode, increase the electrochemical performance of the charge storage capacity and the charge injection ability, and ensure that the microelectrode of the present invention has good biocompatibility and long-term stability such as mechanical stability and electrochemical stability, thereby Improve the electrical stimulation efficiency of the microelectrode of the present invention. Wherein, the three-dimensional platinum nanolayer structure plays the role of the middle adhesion layer, which greatly increases the effective surface area of the microelectrode of the present invention, and simultaneously increases the binding force between the charge storage and injection enhancement layer and the outer surface of the microelectrode unit; charge storage The injection-enhancing layer effectively improves the charge storage capability, charge injection capability and biocompatibility.

本发明微电极的制备方法通过在微电极单元外表面依次制备三维铂纳米层和电荷存储与注入增强层,并使得制备的三维铂纳米层含有分布若干铂纳米锥体或铂纳米花的绒面,且所述电荷存储与注入增强层是结合在所述绒面上,从而使得微电极具有大的表面积,并有效降低微电极阻抗、增加电荷存储能力以及电荷注入能力等电化学性能,保证本发明微电极具有良好的生物兼容性及如机械稳定性与电化学稳定性等长期稳定性,从而提高本发明微电极的电刺激效率。另外,本发明制备方法各步骤能够有效控制,从而保证了制备的微电极性能稳定,而且效率高,能够工业化生产。The preparation method of the microelectrode of the present invention sequentially prepares a three-dimensional platinum nanolayer and a charge storage and injection enhancement layer on the outer surface of the microelectrode unit, and makes the prepared three-dimensional platinum nanolayer contain a suede surface distributed with several platinum nanocones or platinum nanoflowers , and the charge storage and injection enhancement layer is combined on the suede surface, so that the microelectrode has a large surface area, and effectively reduces the microelectrode impedance, increases the electrochemical performance of the charge storage capacity and charge injection capacity, and ensures this The inventive microelectrode has good biocompatibility and long-term stability such as mechanical stability and electrochemical stability, thereby improving the electrical stimulation efficiency of the inventive microelectrode. In addition, each step of the preparation method of the present invention can be effectively controlled, thereby ensuring stable performance of the prepared microelectrode, high efficiency, and industrial production.

正是由于本发明微电极具有低的阻抗、高的电荷存储能力以及电荷注入能力等电化学性能,工作稳定性好,电刺激效率高,因此,本发明微电极能够在传感器、可穿戴设备或植入式器件如活体pH测定、离子分析、神经假体、神经刺激/记录等中的应用,从而提高相应器件的灵敏度,提高准确性。It is precisely because the microelectrode of the present invention has electrochemical properties such as low impedance, high charge storage capacity and charge injection capacity, good working stability, and high electrical stimulation efficiency. Therefore, the microelectrode of the present invention can be used in sensors, wearable devices or Implantable devices such as in vivo pH measurement, ion analysis, neural prosthesis, nerve stimulation/recording, etc., so as to improve the sensitivity and accuracy of the corresponding devices.

附图说明Description of drawings

图1是本发明实施例微电极结构示意图;Fig. 1 is the microelectrode structure schematic diagram of the embodiment of the present invention;

图2是图1所示微电极的A部分单微电极单元的放大剖视图;Fig. 2 is the enlarged sectional view of the A part single microelectrode unit of microelectrode shown in Fig. 1;

图3是三维铂纳米层的含有铂纳米锥绒面的SEM图;其中,图b是图a的局部放大图;Fig. 3 is the SEM picture that contains the platinum nano cone suede of three-dimensional platinum nanolayer; Wherein, Fig. b is the partial enlarged view of Fig. a;

图4是三维铂纳米层与电荷存储与注入增强层构成的复合功能层外表面的绒面SEM图;Fig. 4 is the suede SEM image of the outer surface of the composite functional layer composed of a three-dimensional platinum nanolayer and a charge storage and injection enhancement layer;

图5是对比例1提供的微电极的氧化铱层4的SEM图Fig. 5 is the SEM picture of the iridium oxide layer 4 of the microelectrode that comparative example 1 provides

图6是实施例1和对比例1-3提供的微电极的阻抗性能曲线图;其中,曲线a为对比例3的阻抗性能曲线,曲线b为对比例2的阻抗性能曲线,曲线c为对比例1的阻抗性能曲线,曲线d为实施例1的阻抗性能曲线;Fig. 6 is the impedance performance curve figure of the microelectrode that embodiment 1 and comparative examples 1-3 provide; Wherein, curve a is the impedance performance curve of comparative example 3, and curve b is the impedance performance curve of comparative example 2, and curve c is the impedance performance curve of comparative example 2. The impedance performance curve of ratio 1, curve d is the impedance performance curve of embodiment 1;

图7是实施例1和对比例1-3提供的微电极的循环伏安(CV)曲线图;其中,曲线a为对比例3的CV曲线,曲线b为对比例2的CV曲线,曲线c为对比例1的CV曲线,曲线d为实施例1的CV曲线;Fig. 7 is the cyclic voltammetry (CV) curve figure of the microelectrode that embodiment 1 and comparative examples 1-3 provide; Wherein, curve a is the CV curve of comparative example 3, and curve b is the CV curve of comparative example 2, and curve c Be the CV curve of comparative example 1, curve d is the CV curve of embodiment 1;

图8是实施例1提供的微电极在电刺激0h、24h、72h、96h前后的循环伏安(CV)曲线图。Fig. 8 is a graph of cyclic voltammetry (CV) curves of the microelectrode provided in Example 1 before and after electrical stimulation at 0h, 24h, 72h, and 96h.

具体实施方式detailed description

为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白,以下结合实施例与附图,对本发明进行进一步详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定本发明。In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments and accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

一方面,本发明实施例提供了一种具有良好的生物兼容性及如机械稳定性与电化学稳定性等长期稳定性的微电极。本发明微电极结构如图1-4所示,具有常规微电极必要的组成部件,如包括基体1和设置于所述基体1上的微电极单元2,如图1所示。在微电极单元2外表面还结合有三维铂纳米层3,且在所述三维铂纳米层外表面还结合有电荷存储与注入增强层4,如图2所示。In one aspect, embodiments of the present invention provide a microelectrode with good biocompatibility and long-term stability such as mechanical stability and electrochemical stability. The microelectrode structure of the present invention is shown in Figures 1-4, and has the necessary components of a conventional microelectrode, such as a substrate 1 and a microelectrode unit 2 disposed on the substrate 1, as shown in Figure 1 . A three-dimensional platinum nanolayer 3 is also combined on the outer surface of the microelectrode unit 2, and a charge storage and injection enhancement layer 4 is also combined on the outer surface of the three-dimensional platinum nanolayer, as shown in FIG. 2 .

其中,上述微电极所含的基体1作为微电极单元2的载体,因此,该基体1可以是具有生物兼容性的常规微电极所含常规基体。Wherein, the matrix 1 contained in the microelectrode is used as the carrier of the microelectrode unit 2, therefore, the matrix 1 can be a conventional matrix contained in a conventional microelectrode with biocompatibility.

上述微电极所含的微电极单元2设置于基体1上,另外,该微电极单元2可以是由一个或多个(两个以上)单电极组成。当微电极单元2由多个单电极组成时,该微电极单元2为微电极阵列单元。另外,按照形状而言,微电极单元2(也即是单电极)为圆盘电极、圆环电极、圆柱电极、球形电极、半扁球电极、带状电极、阵列电极、叉指形电极中的任一种。其次,该微电极单元2(也即是单电极)尺寸和材料可以是常规微电极所含单电极常规的尺寸和材料,在具体实施例中,微电极单元2材料为铂电极单元2。The micro-electrode unit 2 included in the above-mentioned micro-electrode is arranged on the substrate 1. In addition, the micro-electrode unit 2 may be composed of one or more (more than two) single electrodes. When the microelectrode unit 2 is composed of multiple single electrodes, the microelectrode unit 2 is a microelectrode array unit. In addition, according to the shape, the microelectrode unit 2 (that is, a single electrode) is a disc electrode, a ring electrode, a cylindrical electrode, a spherical electrode, a semi-spherical electrode, a strip electrode, an array electrode, and an interdigitated electrode. any kind. Secondly, the size and material of the microelectrode unit 2 (that is, a single electrode) can be the conventional size and material of a single electrode contained in a conventional microelectrode. In a specific embodiment, the material of the microelectrode unit 2 is a platinum electrode unit 2 .

上述微电极所含的三维铂纳米层3是结合在微电极单元2的表面,当微电极单元2含有多个单电极时,在每个单电极表面上结合该三维铂纳米层3。该三维铂纳米层3结合在微电极单元2表面上的方式可以是但不仅仅为电沉积。The three-dimensional platinum nanolayer 3 contained in the microelectrode is combined on the surface of the microelectrode unit 2, and when the microelectrode unit 2 contains multiple single electrodes, the three-dimensional platinum nanolayer 3 is combined on the surface of each single electrode. The way of combining the three-dimensional platinum nano-layer 3 on the surface of the micro-electrode unit 2 may be but not limited to electrodeposition.

一实施例中,上述三维铂纳米层3含有分布若干铂纳米锥体或铂纳米花的绒面31。其中,铂纳米锥体的绒面31如图3所示。由于三维铂纳米层3的材料特性,从而起到电荷存储与注入增强层4与微电极单元2之间的中间粘附层作用。另外,该三维铂纳米层3的三维结构特别是如含有分布若干铂纳米锥体或铂纳米花的绒面31结构,一方面有效增大了三维铂纳米层3特别是绒面31与电荷存储与注入增强层4接触面积,也即是三维铂纳米层3特别是绒面31提供极大的表面积容纳电荷存储与注入增强层4,从而能够有效避免电荷存储与注入增强层4在制备过程过于稠密;另一方面三维铂纳米层3特别是绒面31结构能有效改善电荷存储与注入增强层4与微电极单元2之间的结合力,从而提高了由微电极单元2、三维铂纳米层3和电荷存储与注入增强层4三者构成微电极单元整体结构的稳定性和工作性能的长期稳定性。In one embodiment, the above-mentioned three-dimensional platinum nanolayer 3 includes a suede surface 31 distributed with several platinum nanocones or platinum nanoflowers. Wherein, the suede surface 31 of the platinum nanocone is as shown in FIG. 3 . Due to the material properties of the three-dimensional platinum nano-layer 3 , it acts as an intermediate adhesion layer between the charge storage and injection enhancement layer 4 and the micro-electrode unit 2 . In addition, the three-dimensional structure of the three-dimensional platinum nanolayer 3, especially the textured surface 31 structure containing several platinum nanocones or platinum nanoflowers, effectively increases the charge storage capacity of the three-dimensional platinum nanolayer 3, especially the textured surface 31. The area in contact with the injection enhancement layer 4, that is, the three-dimensional platinum nanolayer 3, especially the textured surface 31, provides a large surface area to accommodate the charge storage and injection enhancement layer 4, thereby effectively preventing the charge storage and injection enhancement layer 4 from being too large during the preparation process. dense; on the other hand, the three-dimensional platinum nanolayer 3, especially the suede 31 structure, can effectively improve the bonding force between the charge storage and injection enhancement layer 4 and the microelectrode unit 2, thereby improving the structure of the microelectrode unit 2 and the three-dimensional platinum nanolayer. 3 and the charge storage and injection enhancement layer 4 constitute the stability of the overall structure of the microelectrode unit and the long-term stability of the working performance.

在进一步实施例中,三维铂纳米层3所含的绒面31上的铂纳米锥体或铂纳米花的高度为50nm-800nm,底部直径为50nm-500nm。在另一实施例中,所述铂纳米锥体或铂纳米花分布的密度为25-400个/μm2。通过对构成绒面31的铂纳米锥体或铂纳米花的尺寸和密度进行控制,提高电荷存储与注入增强层4的质量,同时提高由微电极单元2、三维铂纳米层3和电荷存储与注入增强层4三者构成微电极单元整体结构的稳定性和工作性能的长期稳定性。In a further embodiment, the height of the platinum nanocones or platinum nanoflowers on the suede 31 contained in the three-dimensional platinum nanolayer 3 is 50nm-800nm, and the diameter of the bottom is 50nm-500nm. In another embodiment, the distribution density of the platinum nanocones or platinum nanoflowers is 25-400/μm 2 . By controlling the size and density of the platinum nanocones or platinum nanoflowers that constitute the suede 31, the quality of the charge storage and injection enhancement layer 4 is improved, and at the same time, the microelectrode unit 2, the three-dimensional platinum nanolayer 3 and the charge storage and injection enhancement layer are improved. The injection enhancement layer 4 constitutes the stability of the overall structure of the microelectrode unit and the long-term stability of the working performance.

上述微电极所含的电荷存储与注入增强层4结合在三维铂纳米层3的绒面31上,从而有效提高电荷存储能力及电荷注入能力,降低三维铂纳米层3与电荷存储与注入增强层4构成的复合功能层的阻抗。另外,该电荷存储与注入增强层4是顺着三维铂纳米层3的绒面31结构形成,也即是电荷存储与注入增强层4外表面与绒面31的结构形状基本相同。具体的是电荷存储与注入增强层4是结合在构成绒面31的铂纳米锥体或铂纳米花的外表面上,具体的三维铂纳米层3与电荷存储与注入增强层4构成的复合功能层外表面如图4所示。因此,在一实施例中,上述电荷存储与注入增强层4厚度为5nm-600nm。在另一实施例中,上述电荷存储与注入增强层4的材料为氧化铱或导电聚合物。在具体实施例中,电荷存储与注入增强层的材料为氧化铱时,氧化铱呈纳米颗粒状结合在绒面31上并构成所述电荷存储与注入增强层4;电荷存储与注入增强层4的材料为导电聚合物时,上述导电聚合物为聚吡咯、聚苯胺、聚噻吩、聚噻吩衍生物等中的至少一种。通过对电荷存储与注入增强层4的厚度尺寸、材料等控制和优化,进一步降低微电极阻抗,提高电荷存储与注入增强层4的结合强度以及提高电荷存储能力及电荷注入能力。The charge storage and injection enhancement layer 4 contained in the above-mentioned microelectrode is combined on the suede 31 of the three-dimensional platinum nano-layer 3, thereby effectively improving the charge storage capacity and charge injection capacity, and reducing the three-dimensional platinum nano-layer 3 and the charge storage and injection enhancement layer. 4 The impedance of the composite functional layer formed. In addition, the charge storage and injection enhancement layer 4 is formed along the structure of the textured surface 31 of the three-dimensional platinum nano-layer 3 , that is, the outer surface of the charge storage and injection enhancement layer 4 is basically the same as the structure shape of the textured surface 31 . Specifically, the charge storage and injection enhancement layer 4 is combined on the outer surface of the platinum nanocone or platinum nanoflower that constitutes the textured surface 31, and the specific three-dimensional platinum nanolayer 3 and the charge storage and injection enhancement layer 4 form a composite function The outer surface of the layer is shown in Figure 4. Therefore, in one embodiment, the thickness of the charge storage and injection enhancement layer 4 is 5 nm-600 nm. In another embodiment, the material of the charge storage and injection enhancement layer 4 is iridium oxide or conductive polymer. In a specific embodiment, when the material of the charge storage and injection enhancement layer is iridium oxide, the iridium oxide is combined on the suede 31 in the form of nanoparticles to form the charge storage and injection enhancement layer 4; the charge storage and injection enhancement layer 4 When the material is a conductive polymer, the conductive polymer is at least one of polypyrrole, polyaniline, polythiophene, polythiophene derivatives, and the like. By controlling and optimizing the thickness, size and material of the charge storage and injection enhancement layer 4, the microelectrode impedance is further reduced, the bonding strength of the charge storage and injection enhancement layer 4 is improved, and the charge storage and charge injection capabilities are improved.

因此,上述微电极中,采用三维铂纳米层3与电荷存储与注入增强层4构成的复合功能层对微电极单元2外表面进行修饰改性,赋予了上述各实施例中微电极具有大的表面积,并有效降低微电极阻抗、增加电荷存储能力以及电荷注入能力等电化学性能,保证上述微电极具有良好的生物兼容性及如机械稳定性与电化学稳定性等长期稳定性,从而提高上述微电极的电刺激效率。Therefore, in the above-mentioned microelectrode, the composite functional layer composed of the three-dimensional platinum nanolayer 3 and the charge storage and injection enhancement layer 4 is used to modify the outer surface of the microelectrode unit 2, which endows the microelectrode in the above-mentioned embodiments with a large Surface area, and effectively reduce the electrochemical performance of microelectrode impedance, increase charge storage capacity and charge injection ability, ensure that the above microelectrodes have good biocompatibility and long-term stability such as mechanical stability and electrochemical stability, thereby improving the above-mentioned Electrical stimulation efficiency of microelectrodes.

当然,上述各实施例中的微电极除了含有微电极单元2和用于负载所述微电极单元2的基体1之外,还包括其他必要的部件。这些其他必要的部件可以根据微电极的种类不同而不同,另外,这些其他必要的部件也可以是具有生物兼容性的常规微电极的常规结构。Of course, the microelectrodes in the above embodiments include other necessary components besides the microelectrode unit 2 and the base 1 for supporting the microelectrode unit 2 . These other necessary components can be different according to different types of microelectrodes, and these other necessary components can also be conventional structures of conventional microelectrodes with biocompatibility.

另一方面,本发明实施例还提供了一种关于上文所述微电极的制备方法。结合如图1-4所示的微电极结构,上文所述的微电极制备方法包括如下步骤:On the other hand, the embodiment of the present invention also provides a method for preparing the above-mentioned microelectrodes. In combination with the microelectrode structure shown in Figures 1-4, the microelectrode preparation method described above includes the following steps:

在设置于基体1上的微电极单元2外表面依次制备三维铂纳米层3和电荷存储与注入增强层4。A three-dimensional platinum nano-layer 3 and a charge storage and injection enhancement layer 4 are sequentially prepared on the outer surface of the micro-electrode unit 2 arranged on the substrate 1 .

其中,在微电极单元2外表面制备的三维铂纳米层3具有含有分布若干铂纳米锥体或铂纳米花的绒面31,且该绒面31是背离微电极单元2的外表面,即是绒面31与电荷存储与注入增强层4结合。Wherein, the three-dimensional platinum nanolayer 3 prepared on the outer surface of the microelectrode unit 2 has a suede 31 containing a number of platinum nanocones or platinum nanoflowers distributed, and the suede 31 is away from the outer surface of the microelectrode unit 2, that is, The textured surface 31 is combined with the charge storage and injection enhancement layer 4 .

一实施例中,上述含有分布若干铂纳米锥体或铂纳米花的绒面31的三维铂纳米层3的制备方法如下:In one embodiment, the preparation method of the three-dimensional platinum nanolayer 3 containing the suede 31 distributed with several platinum nanocones or platinum nanoflowers is as follows:

将含复合铂盐的镀液采用恒电位沉积、恒电流沉积、脉冲电压沉积任一种方式在所述微电极单元外表面沉积含有绒面31的三维铂纳米层3。The plating solution containing the composite platinum salt is deposited on the outer surface of the micro-electrode unit with the three-dimensional platinum nano-layer 3 containing the suede 31 by means of constant potential deposition, constant current deposition, or pulse voltage deposition.

具体地,当采用恒电位沉积制备三维铂纳米层3时,所述恒电位沉积的电压位为-0.35V~-0.75V;Specifically, when the three-dimensional platinum nano-layer 3 is prepared by constant potential deposition, the voltage of the constant potential deposition is -0.35V~-0.75V;

当采用恒电流沉积制备三维铂纳米层3时,所述恒电流沉积的电流为-0.25μA~-1.75μA;When the three-dimensional platinum nano-layer 3 is prepared by constant current deposition, the current of the constant current deposition is -0.25μA~-1.75μA;

当采用脉冲电压沉积制备三维铂纳米层3时,所述脉冲沉积的电压-0.35V~-0.75V,通断比为(2ms-100ms):(200ms-1000ms)。When pulse voltage deposition is used to prepare the three-dimensional platinum nano-layer 3 , the voltage of the pulse deposition is -0.35V~-0.75V, and the on-off ratio is (2ms-100ms):(200ms-1000ms).

不管采用恒电位沉积、恒电流沉积、脉冲电压沉积中的何种方法制备三维铂纳米层3时,所述恒电位沉积、恒电流沉积、脉冲电压沉积任一种方式沉积的时间优选5~60min,镀液的pH≥7;另外,不管采用上述何种方法制备三维铂纳米层3时,上述含复合铂盐的镀液中的铂盐包括氯化铂、六氯铂酸铵、六氯铂酸钾、六氯铂酸钠、氯铂酸、硝酸铂、硫酸铂、四氯铂酸钾、四氯铂酸铵中的至少两种;具体地,质量比为(0.5-25):(0.5-25)的氯铂酸钠与氯铂酸铵的复合盐。一实施例中,含复合铂盐的镀液的pH可以但不仅仅用磷酸盐调整,如磷酸盐为磷酸氢二钠和磷酸二氢钠复合盐组成的缓冲液。Regardless of which method in constant potential deposition, constant current deposition, and pulse voltage deposition is used to prepare the three-dimensional platinum nanolayer 3, the deposition time of any one of the constant potential deposition, constant current deposition, and pulse voltage deposition is preferably 5 to 60 minutes. , the pH of the plating solution ≥ 7; in addition, no matter which method is used to prepare the three-dimensional platinum nano-layer 3, the platinum salt in the plating solution containing the composite platinum salt includes platinum chloride, ammonium hexachloroplatinate, hexachloroplatinum Potassium chloride, sodium hexachloroplatinate, chloroplatinic acid, platinum nitrate, platinum sulfate, potassium tetrachloroplatinate, ammonium tetrachloroplatinate; specifically, the mass ratio is (0.5-25): (0.5 -25) the compound salt of sodium chloroplatinate and ammonium chloroplatinate. In one embodiment, the pH of the plating solution containing the complex platinum salt can be adjusted, but not only, with phosphate, for example, the phosphate is a buffer composed of disodium hydrogen phosphate and sodium dihydrogen phosphate complex salt.

在进一步实施例中,上述含复合铂盐的镀液中还可添加有机或无机铵盐添加剂,具体地,以上述含复合铂盐的镀液总质量为100%计,所述复合铂盐的含量为1-50%,所述有机或无机铵盐添加剂的含量为0-20%。其中,复合铂盐可以是含有质量浓度为0.5-25%的氯铂酸钠和0.5-25%的氯铂酸铵,所述添加剂的含量为0-20%。另外,所述添加剂为可以是乙二胺二盐酸盐、氯化铵、硫酸铵、硝酸铵等有机或无机铵盐中的一种。In a further embodiment, organic or inorganic ammonium salt additives can also be added to the above-mentioned plating solution containing the composite platinum salt. Specifically, the total mass of the above-mentioned plating solution containing the composite platinum salt is 100%. The content is 1-50%, and the content of the organic or inorganic ammonium salt additive is 0-20%. Wherein, the composite platinum salt may contain sodium chloroplatinate and ammonium chloroplatinate at a mass concentration of 0.5-25% and ammonium chloroplatinate at a mass concentration of 0.5-25%, and the content of the additive is 0-20%. In addition, the additive may be one of organic or inorganic ammonium salts such as ethylenediamine dihydrochloride, ammonium chloride, ammonium sulfate, and ammonium nitrate.

通过对上述制备三维铂纳米层3方法的参数进行控制,使得沉积生成的三维铂纳米层3具有大表面积的三维结构,优选的是具有含有分布若干铂纳米锥体或铂纳米花的绒面31,更优选的是是具有含有分布若干铂纳米锥体的绒面31,并控制铂纳米锥体或铂纳米花的高度、密度等参数,从而使得三维铂纳米层3具有大的表面积,并提高电荷存储与注入增强层4的性能。By controlling the parameters of the method for preparing the three-dimensional platinum nano-layer 3, the three-dimensional platinum nano-layer 3 generated by the deposition has a three-dimensional structure with a large surface area, preferably with a suede surface 31 containing several platinum nano-cones or platinum nano-flowers distributed. , it is more preferred to have the textured surface 31 that contains some platinum nano cones distributed, and control parameters such as the height and density of platinum nano cones or platinum nano flowers, so that the three-dimensional platinum nano layer 3 has a large surface area, and improves Charge storage and injection enhance the performance of layer 4 .

一实施例中,上述电荷存储与注入增强层4的制备方法如下:In one embodiment, the preparation method of the above-mentioned charge storage and injection enhancement layer 4 is as follows:

将含铱盐的镀液采用恒电位沉积、恒电流沉积、脉冲电压沉积、脉冲电流沉积、循环伏安沉积任一种方式在上述三维铂纳米层3的绒面31上沉积氧化铱层;或将导电聚合物溶液沉积于上述三维铂纳米层3的绒面31上形成导电聚合物层。Depositing an iridium oxide layer on the suede 31 of the above-mentioned three-dimensional platinum nano-layer 3 by means of constant potential deposition, constant current deposition, pulse voltage deposition, pulse current deposition, and cyclic voltammetry deposition in the plating solution containing iridium salt; or The conductive polymer solution is deposited on the suede surface 31 of the above-mentioned three-dimensional platinum nano-layer 3 to form a conductive polymer layer.

具体地,当采用恒电位沉积制备氧化铱层时,所述恒电位沉积的电压位为0.35V~0.65V;Specifically, when the iridium oxide layer is prepared by constant potential deposition, the voltage level of the constant potential deposition is 0.35V-0.65V;

当采用恒电流沉积制备氧化铱层时,所述恒电流沉积的电流为0.05μA~1.5μA;When the iridium oxide layer is prepared by constant current deposition, the current of the constant current deposition is 0.05 μA to 1.5 μA;

当采用脉冲沉积制备氧化铱层时,所述脉冲沉积的电压0.35V~0.65V,通断比为(2ms-100ms):(200ms-1000ms);When the iridium oxide layer is prepared by pulse deposition, the voltage of the pulse deposition is 0.35V~0.65V, and the on-off ratio is (2ms-100ms):(200ms-1000ms);

当采用循环伏安沉积制备氧化铱层时,所述循环伏安沉积电压为0.01V~0.8V,循环圈数为20圈~600圈;When the iridium oxide layer is prepared by cyclic voltammetry deposition, the cyclic voltammetry deposition voltage is 0.01V-0.8V, and the number of cycles is 20-600 cycles;

不管采用恒电位沉积、恒电流沉积、脉冲电压沉积、脉冲电流沉积、循环伏安沉积中的何种方法制备电荷存储与注入增强层4时,所述恒电位沉积、恒电流沉积、脉冲电压沉积、脉冲电流沉积、循环伏安沉积任一种方式沉积的时间优选5~60min,镀液的pH≥10。一实施例中,含铱盐镀液的pH可以但不仅仅用弱酸强碱盐调整,如碳酸钠、碳酸钾、乙酸钠、碳酸氢钠、次氯酸钠等。Regardless of which method of constant potential deposition, constant current deposition, pulse voltage deposition, pulse current deposition, and cyclic voltammetry deposition is used to prepare the charge storage and injection enhancement layer 4, the constant potential deposition, constant current deposition, and pulse voltage deposition , pulse current deposition, and cyclic voltammetry deposition, the preferred deposition time is 5-60 minutes, and the pH of the plating solution is greater than or equal to 10. In one embodiment, the pH of the iridium-containing salt bath can be adjusted, but not only, with weak acid and strong alkali salts, such as sodium carbonate, potassium carbonate, sodium acetate, sodium bicarbonate, sodium hypochlorite, and the like.

另外,不管采用上述何种方法制备电荷存储与注入增强层4时,上述含铱盐的镀液中的铱盐包括氯化铱、氯铱酸、六氯铱酸铵、六氯铱酸钾、六氯铱酸钠等铱盐中至少的一种。在进一步实施例中,上述含铱盐的镀液中还可以含有弱酸或氧化剂和弱酸中的一种或两种。在一实施例中,以上述含铱盐的镀镀液总质量为100%计,所述铱盐的含量为0.5-50%,所述氧化剂的含量为0-10%,所述弱酸的含量为0.1-10%;且所述氧化剂与弱酸的含量不同时为0。在具体实施例中,所述氧化剂为过氧化氢、过氧化钠、过氧化钾、氧气、臭氧等中的至少一种,所述弱酸为草酸、柠檬酸、碳酸、醋酸、甲酸、苯甲酸等中的至少一种。In addition, no matter which method is used to prepare the charge storage and injection enhancement layer 4, the iridium salt in the above-mentioned iridium salt-containing plating solution includes iridium chloride, chloroiridic acid, ammonium hexachloroiridate, potassium hexachloroiridate, At least one of iridium salts such as sodium hexachloroiridate. In a further embodiment, the above-mentioned plating solution containing iridium salt may also contain a weak acid or one or both of an oxidizing agent and a weak acid. In one embodiment, based on the total mass of the above-mentioned iridium salt-containing plating solution as 100%, the content of the iridium salt is 0.5-50%, the content of the oxidant is 0-10%, and the content of the weak acid is 0.1-10%; In a specific embodiment, the oxidant is at least one of hydrogen peroxide, sodium peroxide, potassium peroxide, oxygen, ozone, etc., and the weak acid is oxalic acid, citric acid, carbonic acid, acetic acid, formic acid, benzoic acid, etc. at least one of the

当采用将导电聚合物溶液沉积于上述三维铂纳米层3的绒面31上形成导电聚合物层时,所述导电聚合物为聚吡咯、聚苯胺、聚噻吩、聚噻吩衍生物等中的至少一种,所述导电聚合物层的厚度为5nm-600nm。其中,导电聚合物溶液的浓度只要是有利于沉积形成导电聚合物层的任何浓度均可。When the conductive polymer solution is deposited on the suede 31 of the above-mentioned three-dimensional platinum nano-layer 3 to form the conductive polymer layer, the conductive polymer is at least one of polypyrrole, polyaniline, polythiophene, polythiophene derivatives, etc. One, the thickness of the conductive polymer layer is 5nm-600nm. Wherein, the concentration of the conductive polymer solution can be any concentration as long as it is favorable for deposition to form the conductive polymer layer.

通过对上述制备电荷存储与注入增强层4方法的参数进行控制,使得沉积生成的氧化铱层或导电聚合物层等电荷存储与注入增强层4能够有效结合在三维铂纳米层3上,并使得上述电荷存储与注入增强层4是顺着三维铂纳米层3的绒面31结构形成,也即是生成如图4所示的三维铂纳米层3与电荷存储与注入增强层4构成的复合功能层,从而有效降低制备的微电极阻抗、增加电荷存储能力以及电荷注入能力等电化学性能,保证制备的微电极具有良好的生物兼容性及如机械稳定性与电化学稳定性等长期稳定性,从而提高制备的微电极的电刺激效率。By controlling the parameters of the above method for preparing the charge storage and injection enhancement layer 4, the charge storage and injection enhancement layer 4 such as the deposited iridium oxide layer or conductive polymer layer can be effectively combined on the three-dimensional platinum nano-layer 3, and make the The above-mentioned charge storage and injection enhancement layer 4 is formed along the textured surface 31 structure of the three-dimensional platinum nano-layer 3, that is, the composite function formed by the three-dimensional platinum nano-layer 3 and the charge storage and injection enhancement layer 4 as shown in FIG. 4 is formed. layer, so as to effectively reduce the impedance of the prepared microelectrodes, increase the electrochemical properties such as charge storage capacity and charge injection ability, and ensure that the prepared microelectrodes have good biocompatibility and long-term stability such as mechanical stability and electrochemical stability. Thereby improving the electrical stimulation efficiency of the prepared microelectrode.

在进一步实施例中,在所述微电极单元2外表面依次制备三维铂纳米层3和电荷存储与注入增强层4的步骤之前,还包括对所述微电极单元表面进行清洗处理的步骤。一实施例中,上述清洗处理的方法为:In a further embodiment, before the step of sequentially preparing the three-dimensional platinum nano-layer 3 and the charge storage and injection enhancement layer 4 on the outer surface of the micro-electrode unit 2, a step of cleaning the surface of the micro-electrode unit is also included. In one embodiment, the above cleaning method is:

将上文所述微电极的微电极单元2放置在丙酮/乙醇溶液中超声清洗10~30min后,在0.5M H2SO4溶液中通过循环伏安扫描处理(通氮气除尽溶液中的氧气,-0.2V~1.2Vvs Ag/AgCl,100~300mV/s,10~50圈),保证微电极阵列表面彻底清洗干净。Place the microelectrode unit 2 of the microelectrode described above in an acetone/ethanol solution for ultrasonic cleaning for 10 to 30 minutes, and then perform cyclic voltammetry scanning treatment in a 0.5M H 2 SO 4 solution (passing nitrogen to remove oxygen in the solution, -0.2V~1.2Vvs Ag/AgCl, 100~300mV/s, 10~50 cycles), to ensure that the surface of the microelectrode array is thoroughly cleaned.

因此,上述微电极的制备方法能够通过控制制备三维铂纳米层3和电荷存储与注入增强层4的工艺条件对制备的三维铂纳米层3和注入增强层4结构形状和尺寸进行控制和调节优化,从而使得三维铂纳米层3与电荷存储与注入增强层4构成的复合功能层外表面如图4所示。从而使得制备的微电极具有大的表面积,并有效降低制备的微电极阻抗、增加电荷存储能力以及电荷注入能力等电化学性能,保证制备的微电极具有良好的生物兼容性及如机械稳定性与电化学稳定性等长期稳定性,从而提高制备的微电极的电刺激效率。另外,上述微电极制备方法各步骤能够有效控制,从而保证了制备的微电极性能稳定,而且效率高,能够工业化生产。Therefore, the above microelectrode preparation method can control and optimize the structural shape and size of the prepared three-dimensional platinum nanolayer 3 and the injection enhancement layer 4 by controlling the process conditions for preparing the three-dimensional platinum nanolayer 3 and the charge storage and injection enhancement layer 4 , so that the outer surface of the composite functional layer composed of the three-dimensional platinum nano-layer 3 and the charge storage and injection enhancement layer 4 is shown in FIG. 4 . Therefore, the prepared microelectrode has a large surface area, effectively reduces the prepared microelectrode impedance, increases the electrochemical performance such as charge storage capacity and charge injection ability, and ensures that the prepared microelectrode has good biocompatibility and such as mechanical stability and Long-term stability such as electrochemical stability, thereby improving the electrical stimulation efficiency of the prepared microelectrodes. In addition, each step of the microelectrode preparation method can be effectively controlled, thereby ensuring that the prepared microelectrode has stable performance, high efficiency, and can be industrialized.

又一方面,在上述微电极及其制备方法的基础上,本发明实施例还提供了上文所述的微电极应用方法。正如上文所述的,微电极在其微电极单元2的表面上还结合有由三维铂纳米层3和电荷存储与注入增强层4形成的复合功能层结构,从而赋予上文所述微电极低的阻抗、高的电荷存储能力以及电荷注入能力等电化学性能,良好的工作稳定性,高的电刺激效率,因此,有效扩展了上文所述的微电极的应用范围,如上文所述的微电极可根据用途选择作为刺激电极或记录电极,也可根据由三维铂纳米层3和电荷存储与注入增强层4形成的复合功能层的不同微观形貌(如铂纳米锥、铂纳米花等)选择作为载药等用途。因此,在一实施例中,上文所述的微电极能够在传感器、可穿戴设备或植入式器件(如活体pH测定、离子分析、神经假体、神经刺激/记录)等中的应用,从而提高相应器件的灵敏度,提高准确性。In another aspect, on the basis of the above-mentioned microelectrode and its preparation method, the embodiment of the present invention also provides the application method of the above-mentioned microelectrode. As mentioned above, the microelectrode is also combined with a composite functional layer structure formed by a three-dimensional platinum nano-layer 3 and a charge storage and injection enhancement layer 4 on the surface of its microelectrode unit 2, thus endowing the above-mentioned microelectrode Electrochemical properties such as low impedance, high charge storage capacity and charge injection capacity, good working stability, and high electrical stimulation efficiency, therefore, effectively expand the application range of the above-mentioned microelectrode, as mentioned above The microelectrode can be selected as a stimulating electrode or a recording electrode according to the purpose, and can also be selected according to the different microscopic shapes of the composite functional layer formed by the three-dimensional platinum nanolayer 3 and the charge storage and injection enhancement layer 4 (such as platinum nanocone, platinum nanoflower etc.) selected as drug loading and other purposes. Therefore, in one embodiment, the microelectrodes described above can be used in sensors, wearable devices or implantable devices (such as in vivo pH measurement, ion analysis, neural prosthesis, neural stimulation/recording), etc., Thereby improving the sensitivity of the corresponding device and improving the accuracy.

现结合具体实例,对本发明实施例微电极及其制备方法进行进一步详细说明。Now in conjunction with specific examples, the microelectrode of the present invention and its preparation method will be further described in detail.

实施例1Example 1

本实施例提供一种微电极及其制备方法。所述微电极的结构如图1-4所示,其包括基体1和设置于基体1上的铂微电极阵列2,在所述铂微电极阵列2外表面还结合有三维铂纳米层3,在所述三维铂纳米层3外表面还结合有氧化铱层4,其中,所述三维铂纳米层3含有分布若干铂纳米锥体的绒面31,且所述氧化铱层4结合在所述绒面31上。This embodiment provides a microelectrode and a preparation method thereof. The structure of the microelectrodes is as shown in Figures 1-4, which includes a substrate 1 and a platinum microelectrode array 2 arranged on the substrate 1, and a three-dimensional platinum nanolayer 3 is also combined on the outer surface of the platinum microelectrode array 2, Also be combined with iridium oxide layer 4 on the outer surface of described three-dimensional platinum nano-layer 3, wherein, described three-dimensional platinum nano-layer 3 contains the suede 31 that distributes some platinum nano-cones, and described iridium oxide layer 4 is combined on the described Suede 31 on.

本实施例微电极制备方法如下:The preparation method of the microelectrode in this embodiment is as follows:

S11.对微电极所含的铂微电极阵列2清洗:将微电极阵列2放置在丙酮/乙醇溶液中超声清洗10~30min后,在0.5M H2SO4溶液中通过循环伏安扫描处理(通氮气除尽溶液中的氧气,-0.2V~1.2V vs Ag/AgCl,100~300mV/s,10~50圈),保证微电极阵列表面彻底清洗干净;S11. Clean the platinum microelectrode array 2 contained in the microelectrode: place the microelectrode array 2 in an acetone/ethanol solution for ultrasonic cleaning for 10 to 30 minutes, and then process it in a 0.5M H 2 SO 4 solution by cyclic voltammetry scanning (generally Nitrogen removes the oxygen in the solution, -0.2V~1.2V vs Ag/AgCl, 100~300mV/s, 10~50 cycles), to ensure that the surface of the microelectrode array is thoroughly cleaned;

S12.沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3:将含复合铂盐的镀液采用恒电位沉积方式在经清洗后微电极的微电极单元2外表面沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3;其中,恒电位沉积方式的相关工艺条件如下:S12. Deposit a three-dimensional platinum nanolayer 3 containing a number of platinum nanocone suedes 31: deposit a plating solution containing a composite platinum salt on the outer surface of the microelectrode unit 2 of the microelectrode after cleaning by means of constant potential deposition. The three-dimensional platinum nanolayer 3 of the platinum nanocone textured surface 31; wherein, the relevant process conditions of the constant potential deposition method are as follows:

恒电位沉积的电压为-0.7V,沉积时间为10~30min,沉积时镀液的pH为~7.8;The voltage of constant potential deposition is -0.7V, the deposition time is 10-30min, and the pH of the plating solution during deposition is ~7.8;

含复合铂盐的镀液的配方如下:The formula of the plating solution containing composite platinum salt is as follows:

在室温下,分别将10mmol的氯铂酸铵和5mmol的氯铂酸钾加入含有1L蒸馏水的容器中搅拌均匀,添加适量的磷酸氢二钠与磷酸二氢钠复合盐调整溶液pH至~7.8,得到复合铂盐镀液。At room temperature, add 10mmol of ammonium chloroplatinate and 5mmol of potassium chloroplatinate into a container containing 1L of distilled water and stir evenly, add an appropriate amount of disodium hydrogen phosphate and sodium dihydrogen phosphate compound salt to adjust the pH of the solution to ~7.8, A composite platinum salt plating solution is obtained.

S13.在三维铂纳米层3的绒面31慢速沉积氧化铱:将含铱盐的镀液采用恒电位沉积方式在所述绒面31上沉积氧化铱层4;其中,恒电位沉积方式的相关工艺条件如下:S13. Deposit iridium oxide slowly on the suede surface 31 of the three-dimensional platinum nano-layer 3: deposit the iridium oxide layer 4 on the suede surface 31 by means of constant potential deposition with the plating solution containing iridium salt; wherein, the constant potential deposition mode The relevant process conditions are as follows:

恒电位沉积的电压为0.35V,沉积时间为40~60min,沉积时镀液的pH为~11;The voltage of constant potential deposition is 0.35V, the deposition time is 40-60min, and the pH of the plating solution is ~11 during deposition;

含铱盐的镀液的配方如下:The formula of the plating solution containing iridium salt is as follows:

在室温下,分别将2mmol的氯铱酸、5mL的过氧化钠和3mmol的醋酸加入含有1L蒸馏水的容器中搅拌均匀,调整溶液pH至~11,得到铱盐镀液。At room temperature, add 2mmol of chloroiridic acid, 5mL of sodium peroxide and 3mmol of acetic acid into a container containing 1L of distilled water and stir evenly, adjust the pH of the solution to ~11 to obtain an iridium salt plating solution.

将本实施例1中步骤S12制备的含有分布若干铂纳米锥体绒面31的三维铂纳米层3进行SEM观察,其绒面31的SEM图如图3所示,其表面生长有众多铂纳米锥体。经测定,该铂纳米锥体的高度为50-600nm、分布密度为50-400个/μm2The three-dimensional platinum nanolayer 3 prepared in step S12 in the present embodiment 1 is observed by SEM, and the SEM image of the suede 31 is as shown in Figure 3, and there are many platinum nanometer layers growing on its surface. cone. It is determined that the height of the platinum nano cones is 50-600nm, and the distribution density is 50-400/μm 2 .

将本实施例1中步骤S13制备的氧化铱层4外表面进行SEM观察,结果如图4所示,以较慢的沉积速率使氧化铱颗粒均匀地沉积在三维铂纳米层3的绒面31上形成氧化铱层4,经测定,该氧化铱颗粒直径为50-500nm,厚度为5nm-600nm,该无明显氧化铱层4裂纹,因此,将氧化铱层4沉积在绒面31表面上避免了氧化铱在沉积过程中过于稠密产生裂纹而失效;同时复合镀层的结合力也得到了有效改善,有助于改善镀层的长期稳定性。The outer surface of the iridium oxide layer 4 prepared in step S13 in the present embodiment 1 was observed by SEM. As shown in FIG. The iridium oxide layer 4 is formed on the surface. After measurement, the iridium oxide particles have a diameter of 50-500nm and a thickness of 5nm-600nm. There is no obvious crack in the iridium oxide layer 4. Therefore, the iridium oxide layer 4 is deposited on the suede 31 surface to avoid It prevents iridium oxide from being too dense to cause cracks during the deposition process and fails; at the same time, the bonding force of the composite coating is also effectively improved, which helps to improve the long-term stability of the coating.

实施例2Example 2

本实施例提供一种微电极及其制备方法,具体步骤如下:This embodiment provides a microelectrode and a preparation method thereof, and the specific steps are as follows:

S21.对微电极所含的铂微电极阵列2清洗:将微电极阵列2放置在丙酮/乙醇溶液中超声清洗10~30min后,在0.5M H2SO4溶液中通过循环伏安扫描10~50圈,保证微电极阵列表面彻底清洗干净;S21. Clean the platinum microelectrode array 2 contained in the microelectrode: place the microelectrode array 2 in an acetone/ethanol solution and ultrasonically clean it for 10 to 30 minutes, then scan it by cyclic voltammetry in a 0.5M H 2 SO 4 solution for 10 to 50 minutes. circle to ensure that the surface of the microelectrode array is thoroughly cleaned;

S22.沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3:将含复合铂盐的镀液采用恒电流沉积方式在经清洗后微电极的微电极单元2外表面沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3;其中,恒电流沉积方式的相关工艺条件如下:S22. Deposit a three-dimensional platinum nanolayer 3 containing a number of platinum nanocone suedes 31: deposit a plating solution containing a composite platinum salt on the outer surface of the microelectrode unit 2 of the cleaned microelectrode by constant current deposition. The three-dimensional platinum nanolayer 3 of the platinum nanocone textured surface 31; wherein, the relevant process conditions of the constant current deposition method are as follows:

恒电流沉积的电流为-1.5μA,沉积时间为10~30min,沉积时镀液的pH为~7.8;The current of constant current deposition is -1.5μA, the deposition time is 10-30min, and the pH of the plating solution during deposition is ~7.8;

含复合铂盐的镀液的配方如下:The formula of the plating solution containing composite platinum salt is as follows:

在室温下,分别将20mmol的氯铂酸铵和5mmol的硝酸铂加入含有1L蒸馏水的容器中搅拌均匀,添加适量的磷酸二氢钠与磷酸氢二钠复合盐调整溶液pH至~7.8,得到复合铂盐镀液;At room temperature, add 20mmol of ammonium chloroplatinate and 5mmol of platinum nitrate into a container containing 1L of distilled water and stir evenly, add an appropriate amount of sodium dihydrogen phosphate and disodium hydrogen phosphate compound salt to adjust the pH of the solution to ~7.8 to obtain a compound Platinum salt bath;

S23.在三维铂纳米层3的绒面31慢速沉积氧化铱:将含铱盐的镀液采用恒电流沉积方式在所述绒面31上沉积氧化铱层4;其中,恒电流沉积方式的相关工艺条件如下:S23. Slowly deposit iridium oxide on the suede 31 of the three-dimensional platinum nano-layer 3: deposit the iridium oxide layer 4 on the suede 31 by means of constant current deposition with the plating solution containing iridium salt; wherein, the constant current deposition mode The relevant process conditions are as follows:

恒电流沉积的电压为0.05μA,沉积时间为40~60min,沉积时镀液的pH为~11;The voltage of constant current deposition is 0.05μA, the deposition time is 40-60min, and the pH of the plating solution is ~11 during deposition;

含铱盐的镀液的配方如下:The formula of the plating solution containing iridium salt is as follows:

在室温下,分别将5mmol的氯铱酸钾、100mmol的草酸加入含有1L蒸馏水的容器中搅拌均匀,调整溶液pH至~11,得到铱盐镀液。At room temperature, respectively add 5 mmol of potassium chloroiridate and 100 mmol of oxalic acid into a container containing 1 L of distilled water and stir evenly, adjust the pH of the solution to ~11 to obtain an iridium salt plating solution.

本实施例中的铂纳米锥体的高度为50-600nm、分布密度为50-400个/μm2。随后以较慢的沉积速率使氧化铱颗粒均匀地沉积在三维铂纳米层3的绒面31上形成氧化铱层4,该氧化铱颗粒直径为50-500nm,厚度为5nm-600nm。The height of the platinum nanocones in this embodiment is 50-600 nm, and the distribution density is 50-400/μm 2 . Subsequently, iridium oxide particles are uniformly deposited on the suede surface 31 of the three-dimensional platinum nano-layer 3 at a slower deposition rate to form an iridium oxide layer 4, the diameter of the iridium oxide particles is 50-500nm, and the thickness is 5nm-600nm.

实施例3Example 3

本实施例提供一种微电极及其制备方法,具体步骤如下:This embodiment provides a microelectrode and a preparation method thereof, and the specific steps are as follows:

S31.对微电极所含的铂微电极阵列2清洗,保证微电极阵列表面彻底清洗干净;S31. Cleaning the platinum microelectrode array 2 contained in the microelectrode to ensure that the surface of the microelectrode array is thoroughly cleaned;

S32.沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3:将含复合铂盐的镀液采用脉冲电沉积方式在经清洗后微电极的微电极单元2外表面沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3;其中,脉冲电沉积方式的相关工艺条件如下:S32. Depositing a three-dimensional platinum nanolayer 3 containing a number of platinum nanocone suedes 31: depositing a plating solution containing a composite platinum salt on the outer surface of the microelectrode unit 2 of the cleaned microelectrode by pulse electrodeposition. The three-dimensional platinum nanolayer 3 of the platinum nanocone textured surface 31; wherein, the relevant process conditions of the pulse electrodeposition method are as follows:

脉冲电沉积的电位为-0.35V,通断比为10ms:500ms,1000周期,沉积时镀液的pH为~7.8;The potential of pulse electrodeposition is -0.35V, the on-off ratio is 10ms:500ms, 1000 cycles, and the pH of the plating solution is ~7.8 during deposition;

含复合铂盐的镀液的配方如下:The formula of the plating solution containing composite platinum salt is as follows:

在室温下,分别将5mmol的硫酸铂和10mmol的氯铂酸钠加入含有1L蒸馏水的容器中搅拌均匀,添加20mmol的有机或无机铵盐添加剂,同时添加适量的磷酸二氢钠与磷酸氢二钠复合盐调整溶液pH至~7.8,得到复合铂盐镀液;At room temperature, add 5mmol of platinum sulfate and 10mmol of sodium chloroplatinate into a container containing 1L of distilled water and stir evenly, add 20mmol of organic or inorganic ammonium salt additives, and add appropriate amount of sodium dihydrogen phosphate and disodium hydrogen phosphate The compound salt adjusts the pH of the solution to ~7.8 to obtain a compound platinum salt plating solution;

S33.在三维铂纳米层3的绒面31慢速沉积氧化铱:将含铱盐的镀液采用脉冲电沉积方式在所述绒面31上沉积氧化铱层4;其中,脉冲电沉积方式的相关工艺条件如下:S33. Deposit iridium oxide slowly on the suede surface 31 of the three-dimensional platinum nano-layer 3: deposit the iridium oxide layer 4 on the suede surface 31 with the plating solution containing iridium salt by pulse electrodeposition; wherein, the pulse electrodeposition method The relevant process conditions are as follows:

脉冲电沉积的电压为0.35V,通断比为10ms:500ms,1000周期,沉积时镀液的pH为~11;The voltage of pulse electrodeposition is 0.35V, the on-off ratio is 10ms:500ms, 1000 cycles, and the pH of the plating solution is ~11 during deposition;

含铱盐的镀液的配方如下:The formula of the plating solution containing iridium salt is as follows:

在室温下,分别将5mmol的氯铱酸钠、15mL的过氧化钠和10mmol的柠檬酸加入含有1L蒸馏水的容器中搅拌均匀,调整溶液pH至~11,得到铱盐镀液。At room temperature, add 5mmol of sodium chloroiridate, 15mL of sodium peroxide and 10mmol of citric acid into a container containing 1L of distilled water and stir evenly, adjust the pH of the solution to ~11 to obtain an iridium salt plating solution.

本实施例中的铂纳米锥体的高度为50-600nm、分布密度为50-400个/μm2。随后以较慢的沉积速率使氧化铱颗粒均匀地沉积在三维铂纳米层3的绒面31上形成氧化铱层4,该氧化铱颗粒直径为50-500nm,厚度为5nm-600nm。The height of the platinum nanocones in this embodiment is 50-600 nm, and the distribution density is 50-400/μm 2 . Subsequently, iridium oxide particles are uniformly deposited on the suede surface 31 of the three-dimensional platinum nano-layer 3 at a slower deposition rate to form an iridium oxide layer 4, the diameter of the iridium oxide particles is 50-500nm, and the thickness is 5nm-600nm.

实施例4Example 4

本实施例提供一种微电极及其制备方法,具体步骤如下:This embodiment provides a microelectrode and a preparation method thereof, and the specific steps are as follows:

S31.对微电极所含的铂微电极阵列2清洗,保证微电极阵列表面彻底清洗干净;S31. Cleaning the platinum microelectrode array 2 contained in the microelectrode to ensure that the surface of the microelectrode array is thoroughly cleaned;

S32.沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3:将含复合铂盐的镀液采用恒电位沉积方式在经清洗后微电极的微电极单元2外表面沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3;其中,恒电位沉积方式的相关工艺条件如下:S32. Deposit a three-dimensional platinum nanolayer 3 containing a number of platinum nanocone suedes 31: deposit a plating solution containing a composite platinum salt on the outer surface of the microelectrode unit 2 of the cleaned microelectrode by a constant potential deposition method containing a number of The three-dimensional platinum nanolayer 3 of the platinum nanocone textured surface 31; wherein, the relevant process conditions of the constant potential deposition method are as follows:

恒电位沉积的电位为-0.5V,沉积时间30~60min,沉积时镀液的pH为~7.8;The potential of constant potential deposition is -0.5V, the deposition time is 30-60min, and the pH of the plating solution during deposition is ~7.8;

含复合铂盐的镀液的配方如下:The formula of the plating solution containing composite platinum salt is as follows:

在室温下,分别将2mmol的硝酸铂和15mmol的氯铂酸钾加入含有1L蒸馏水的容器中搅拌均匀,添加15mmol的有机或无机铵盐添加剂,同时添加适量的磷酸二氢钠与磷酸氢二钠复合盐调整溶液pH至~7.8,得到复合铂盐镀液;At room temperature, add 2mmol of platinum nitrate and 15mmol of potassium chloroplatinate into a container containing 1L of distilled water and stir evenly, add 15mmol of organic or inorganic ammonium salt additives, and add an appropriate amount of sodium dihydrogen phosphate and disodium hydrogen phosphate The compound salt adjusts the pH of the solution to ~7.8 to obtain a compound platinum salt plating solution;

S33.在三维铂纳米层3的绒面31慢速沉积氧化铱:将含铱盐的镀液采用循环伏安沉积方式在所述绒面31上沉积氧化铱层4;其中,循环伏安沉积方式的相关工艺条件如下:S33. Deposit iridium oxide slowly on the suede surface 31 of the three-dimensional platinum nano-layer 3: deposit the iridium oxide layer 4 on the suede surface 31 using the plating solution containing iridium salt by cyclic voltammetry deposition; wherein, cyclic voltammetry deposition The relevant process conditions of the method are as follows:

循环伏安沉积的电压为0.01V~0.65V,循环50~500圈,沉积时镀液的pH为~11;The voltage of cyclic voltammetry deposition is 0.01V ~ 0.65V, and the cycle is 50 ~ 500 cycles, and the pH of the plating solution is ~ 11 during deposition;

含铱盐的镀液的配方如下:The formula of the plating solution containing iridium salt is as follows:

在室温下,分别将2mmol的氯铱酸钠、10mL的过氧化氢和8mmol的醋酸加入含有1L蒸馏水的容器中搅拌均匀,调整溶液pH至~11,得到铱盐镀液。At room temperature, add 2mmol of sodium chloroiridate, 10mL of hydrogen peroxide and 8mmol of acetic acid into a container containing 1L of distilled water and stir evenly, adjust the pH of the solution to ~11 to obtain an iridium salt plating solution.

本实施例中的铂纳米锥体的高度为50-600nm、分布密度为50-400个/μm2。随后以较慢的沉积速率使氧化铱颗粒均匀地沉积在三维铂纳米层3的绒面31上形成氧化铱层4,该氧化铱颗粒直径为50-500nm,厚度为5nm-600nm。The height of the platinum nanocones in this embodiment is 50-600 nm, and the distribution density is 50-400/μm 2 . Subsequently, iridium oxide particles are uniformly deposited on the suede surface 31 of the three-dimensional platinum nano-layer 3 at a slower deposition rate to form an iridium oxide layer 4, the diameter of the iridium oxide particles is 50-500nm, and the thickness is 5nm-600nm.

对比例1Comparative example 1

直接在如实施例1所述微电极的微电极单元2(经过如同实施例1步骤S11清洗处理)表面采用如同实施例1步骤S13的方法和工艺条件沉积氧化铱层4。The iridium oxide layer 4 is directly deposited on the surface of the microelectrode unit 2 of the microelectrode described in Example 1 (after the cleaning treatment as in Step S11 of Example 1) using the same method and process conditions as in Step S13 of Example 1.

将对比例1直接在微电极单元2表面沉积的氧化铱层4进行SEM观察,结果如图5所示,单一的氧化铱镀层4具有明显的裂纹,也即是直接在微电极单元2表面沉积的氧化铱层4容易产生裂纹,严重影响镀层的长期稳定性。事实上,单一的氧化铱镀层4与未修饰的铂材微电极单元2之间的结合力本来就不好,也即是氧化铱层4与微电极单元2之间的结合强度不高。The iridium oxide layer 4 deposited directly on the surface of the microelectrode unit 2 in Comparative Example 1 was observed by SEM. As shown in FIG. The iridium oxide layer 4 is prone to cracks, which seriously affects the long-term stability of the coating. In fact, the bonding force between the single iridium oxide coating layer 4 and the unmodified platinum microelectrode unit 2 is not good, that is, the bonding strength between the iridium oxide layer 4 and the microelectrode unit 2 is not high.

对比例2Comparative example 2

直接在如实施例1所述微电极的微电极单元2(经过如同实施例1步骤S11清洗处理)表面采用如同实施例1步骤S12的方法和工艺条件沉积含有分布若干铂纳米锥体绒面31的三维铂纳米层3。即不如同实施例1中继续在三维铂纳米层3表面沉积氧化铱镀层4。Directly on the surface of the microelectrode unit 2 of the microelectrode as described in Example 1 (through the cleaning process as in Example 1 step S11), the method and process conditions as in Example 1 step S12 are deposited on the surface containing a number of platinum nano-cone suede 31 distributed. 3D platinum nanolayers 3 . That is, it is not like in Example 1 to continue to deposit the iridium oxide coating 4 on the surface of the three-dimensional platinum nano-layer 3 .

对比例3Comparative example 3

实施例1提供的包括基体1和设置于基体1上的铂微电极阵列2的微电极。即不如同实施例1中继续在铂微电极阵列2表面依次沉积三维铂纳米层3和氧化铱镀层4。Embodiment 1 provides a microelectrode comprising a substrate 1 and a platinum microelectrode array 2 disposed on the substrate 1 . That is, it is not as in Example 1 that the three-dimensional platinum nano-layer 3 and the iridium oxide coating 4 are successively deposited on the surface of the platinum microelectrode array 2 .

相关性能测试:Related performance tests:

将上述实施例1和对比例1-3提供的微电极分别进行如下相关性能的实验测试:The microelectrodes provided in the above-mentioned Example 1 and Comparative Examples 1-3 were respectively subjected to the following experimental tests of related properties:

1.阻抗性能测试:测试结果如图6所示。由图6可知,单一的铂纳米锥镀层(对比例1提供的微电极)阻抗相比未修饰电极(铂基体,对比例3提供的微电极)降低>80%,而氧化铱/铂纳米锥复合镀层(实施例1提供的微电极)相比未修饰电极(铂基体,对比例3提供的微电极)降低>95%。阻抗值的降低在很大程度上减少了后期微电极阵列植入刺激的能耗。1. Impedance performance test: The test results are shown in Figure 6. As can be seen from Figure 6, the impedance of a single platinum nanocone coating (the microelectrode provided in Comparative Example 1) reduces >80% compared to the unmodified electrode (platinum substrate, the microelectrode provided in Comparative Example 3), while the iridium oxide/platinum nanocone The composite coating (the microelectrode provided in Example 1) was reduced by >95% compared to the unmodified electrode (platinum substrate, the microelectrode provided in Comparative Example 3). The reduction of the impedance value greatly reduces the energy consumption of the microelectrode array implantation stimulation in the later stage.

2.循环伏安(CV)测试:测试结果如图7所示。由图6可知,氧化铱/铂纳米锥复合镀层(实施例1提供的微电极)的CV面积明显大于其它(对比例1-3)任一镀层,氧化铱/铂纳米锥复合镀层的电荷存储能力相比对比例3提供的微电极增大了至少6倍。2. Cyclic voltammetry (CV) test: the test results are shown in FIG. 7 . As can be seen from Fig. 6, the CV area of iridium oxide/platinum nano cone composite coating (the microelectrode that embodiment 1 provides) is obviously greater than other (comparative examples 1-3) any coating, the charge storage of iridium oxide/platinum nano cone composite coating Compared with the microelectrode provided by Comparative Example 3, the capacity is increased by at least 6 times.

3.实施例1提供的微电极在电刺激前后的循环伏安(CV)测试:将实施例提供的微电极提供的微电极分别在电刺激1小时、24小时、72小时和96小时进行循环伏安(CV)测试,测试结果如图8所示。由图8可知,虽然实施例1提供的氧化铱/铂纳米锥复合镀层的CV面积随电刺激时间的延长而减小,但即使经过96小时的电刺激后,其CV面积仍远远大于如对比例3微电极,电荷存储能力依然高出5倍以上。3. Cyclic voltammetry (CV) test of the microelectrode provided in Example 1 before and after electrical stimulation: the microelectrode provided by the embodiment is cycled at 1 hour, 24 hours, 72 hours and 96 hours of electrical stimulation respectively Volt-ampere (CV) test, the test results are shown in Figure 8. As can be seen from Figure 8, although the CV area of the iridium oxide/platinum nanocone composite coating provided by Example 1 decreases with the prolongation of the electrical stimulation time, even after 96 hours of electrical stimulation, its CV area is still far greater than that of Compared with the microelectrode of Example 3, the charge storage capacity is still more than 5 times higher.

以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.

Claims (10)

1.一种微电极,包括基体和设置于所述基体上的微电极单元,其特征在于:在所述微电极单元外表面还结合有三维铂纳米层,在所述三维铂纳米层外表面还结合有电荷存储与注入增强层,其中,所述三维铂纳米层含有分布若干铂纳米锥体或铂纳米花的绒面,且所述电荷存储与注入增强层结合在所述绒面上。1. a kind of microelectrode, comprise substrate and be arranged on the microelectrode unit on described substrate, it is characterized in that: also be combined with three-dimensional platinum nano-layer on described micro-electrode unit outer surface, on described three-dimensional platinum nano-layer outer surface A charge storage and injection enhancement layer is also combined, wherein the three-dimensional platinum nanolayer contains a textured surface with several platinum nanocones or platinum nanoflowers, and the charge storage and injection enhancement layer is combined on the textured surface. 2.根据权利要求1所述的微电极,其特征在于:所述铂纳米锥体或铂纳米花的高度为50nm-800nm,底部直径为50nm-500nm,和/或2. The microelectrode according to claim 1, characterized in that: the height of the platinum nanocones or platinum nanoflowers is 50nm-800nm, and the bottom diameter is 50nm-500nm, and/or 所述铂纳米锥体或铂纳米花分布的密度为25-400个/μm2,和/或The distribution density of the platinum nanocones or platinum nanoflowers is 25-400/μm 2 , and/or 所述电荷存储与注入增强层的厚度为5nm-600nm。The charge storage and injection enhancement layer has a thickness of 5nm-600nm. 3.根据权利要求1或2所述的微电极,其特征在于:所述电荷存储与注入增强层的材料为氧化铱或导电聚合物;其中,电荷存储与注入增强层的材料为氧化铱时,所述电荷存储与注入增强层由氧化铱纳米颗粒逐一沉积于所述三维铂纳米层的所述绒面上,堆积形成层状;和/或3. The microelectrode according to claim 1 or 2, characterized in that: the material of the charge storage and injection enhancement layer is iridium oxide or a conductive polymer; wherein, the material of the charge storage and injection enhancement layer is iridium oxide , the charge storage and injection enhancement layer is deposited one by one on the suede surface of the three-dimensional platinum nanolayer by iridium oxide nanoparticles, stacked to form a layer; and/or 所述微电极单元为圆盘电极、圆环电极、圆柱电极、球形电极、半扁球电极、带状电极、阵列电极、叉指形电极中的任一种。The micro-electrode unit is any one of a disk electrode, a ring electrode, a cylindrical electrode, a spherical electrode, a semi-spherical electrode, a strip electrode, an array electrode, and an interdigitated electrode. 4.一种微电极的制备方法,包括如下步骤:4. A preparation method for a microelectrode, comprising the steps of: 在设置于基体上的微电极单元外表面依次制备三维铂纳米层和电荷存储与注入增强层;其中,所述三维铂纳米层含有分布若干铂纳米锥体或铂纳米花的绒面,且所述电荷存储与注入增强层是结合在所述绒面上。A three-dimensional platinum nanolayer and a charge storage and injection enhancement layer are sequentially prepared on the outer surface of the microelectrode unit arranged on the substrate; wherein, the three-dimensional platinum nanolayer contains a suede surface distributed with several platinum nanocones or platinum nanoflowers, and the The charge storage and injection enhancement layer is combined on the suede surface. 5.根据权利要求4所述的制备方法,其特征在于:所述制备三维铂纳米层的方法如下:5. preparation method according to claim 4, is characterized in that: the method for described preparation three-dimensional platinum nano-layer is as follows: 将含复合铂盐的镀液采用恒电位沉积、恒电流沉积、脉冲电压沉积任一种方式在所述微电极单元外表面沉积所述三维铂纳米层;和/或Depositing the three-dimensional platinum nano-layer on the outer surface of the microelectrode unit by means of constant potential deposition, constant current deposition, or pulse voltage deposition in the plating solution containing the composite platinum salt; and/or 所述制备电荷存储与注入增强层的方法如下:The method for preparing the charge storage and injection enhancement layer is as follows: 将含铱盐的镀液采用恒电位沉积、恒电流沉积、脉冲电压沉积、脉冲电流沉积、循环伏安任一种方式在所述绒面上沉积氧化铱层;或将导电聚合物溶液沉积于所述绒面上形成导电聚合物层。The plating solution containing iridium salt adopts any mode of constant potential deposition, constant current deposition, pulse voltage deposition, pulse current deposition, and cyclic voltammetry to deposit an iridium oxide layer on the suede surface; or deposit the conductive polymer solution on A conductive polymer layer is formed on the suede. 6.根据权利要求4或5所述的制备方法,其特征在于:在制备所述三维铂纳米层的步骤中,所述恒电位沉积的电压位为-0.35V~-0.75V;所述恒电流沉积的电流为-0.25μA~-1.75μA;所述脉冲沉积的电压-0.35V~-0.75V,通断比为(2ms-100ms):(200ms-1000ms);所述含复合铂盐的镀液中的铂盐包括氯化铂、六氯铂酸铵、六氯铂酸钾、六氯铂酸钠、氯铂酸、硝酸铂、硫酸铂、四氯铂酸钾、四氯铂酸铵中的至少两种;所述恒电位沉积、恒电流沉积、脉冲电压沉积任一种方式沉积的时间5~60min,镀液的pH≥7;6. The preparation method according to claim 4 or 5, characterized in that: in the step of preparing the three-dimensional platinum nano-layer, the potential of the constant potential deposition is -0.35V~-0.75V; The current of galvanic deposition is -0.25μA~-1.75μA; the voltage of said pulse deposition is -0.35V~-0.75V, and the on-off ratio is (2ms-100ms):(200ms-1000ms); said composite platinum salt Platinum salts in the plating solution include platinum chloride, ammonium hexachloroplatinate, potassium hexachloroplatinate, sodium hexachloroplatinate, chloroplatinic acid, platinum nitrate, platinum sulfate, potassium tetrachloroplatinate, ammonium tetrachloroplatinate At least two of them; the deposition time of any one of the constant potential deposition, constant current deposition, and pulse voltage deposition is 5 to 60 minutes, and the pH of the plating solution is ≥ 7; 在制备所述氧化铱层的步骤中,所述恒电位沉积的电压位为0.35V~0.65V;所述恒电流沉积的电流为0.05μA~1.5μA;所述脉冲沉积的电压0.35V~0.65V,通断比为(2ms-100ms):(200ms-1000ms);所述循环伏安沉积电压为0.01V~0.8V,循环圈数为20圈~600圈;所述含铱盐的镀液中的铱盐包括氯化铱、氯铱酸、六氯铱酸铵、六氯铱酸钾、六氯铱酸钠等铱盐中的至少一种;所述恒电位沉积、恒电流沉积、脉冲电压沉积任一种方式沉积的时间5~60min,沉积的pH≥10;In the step of preparing the iridium oxide layer, the voltage of the constant potential deposition is 0.35V~0.65V; the current of the constant current deposition is 0.05μA~1.5μA; the voltage of the pulse deposition is 0.35V~0.65V V, the on-off ratio is (2ms-100ms): (200ms-1000ms); the cyclic voltammetry deposition voltage is 0.01V~0.8V, and the number of cycles is 20 circles~600 circles; the plating solution containing iridium salt The iridium salts in include at least one of iridium salts such as iridium chloride, chloroiridic acid, ammonium hexachloroiridate, potassium hexachloroiridate, sodium hexachloroiridate; the constant potential deposition, constant current deposition, pulse The deposition time of any method of voltage deposition is 5 to 60 minutes, and the pH of the deposition is ≥ 10; 所述导电聚合物为聚吡咯、聚苯胺、聚噻吩、聚噻吩衍生物中的至少一种,所述导电聚合物层的厚度为5nm-600nm。The conductive polymer is at least one of polypyrrole, polyaniline, polythiophene and polythiophene derivatives, and the thickness of the conductive polymer layer is 5nm-600nm. 7.根据权利要求6所述的制备方法,其特征在于:所述含复合铂盐的镀液中还可添加有机或无机铵盐添加剂,其中,以所述含复合铂盐的镀液总质量为100%计,所述复合铂盐的含量为1-50%,所述添加剂的含量为0-20%;和/或7. preparation method according to claim 6, is characterized in that: also can add organic or inorganic ammonium salt additive in the described plating solution that contains composite platinum salt, wherein, with the described plating solution gross mass that contains composite platinum salt Based on 100%, the content of the composite platinum salt is 1-50%, and the content of the additive is 0-20%; and/or 所述含铱盐的镀液中还含有弱酸或氧化剂和弱酸,其中,以所述含铱盐的镀液总质量为100%计,所述铱盐的含量为0.05-10%,所述氧化剂的含量为0-10%,所述弱酸的含量为0.1-10%。The plating solution containing iridium salt also contains weak acid or oxidizing agent and weak acid, wherein, based on the total mass of the plating solution containing iridium salt being 100%, the content of the iridium salt is 0.05-10%, and the oxidizing agent The content of the weak acid is 0-10%, and the content of the weak acid is 0.1-10%. 8.根据权利要求7所述的制备方法,其特征在于:所述添加剂为乙二胺二盐酸盐、氯化铵、硫酸铵、硝酸铵等有机或无机铵盐中的一种。8. The preparation method according to claim 7, wherein the additive is one of organic or inorganic ammonium salts such as ethylenediamine dihydrochloride, ammonium chloride, ammonium sulfate, and ammonium nitrate. 9.根据权利要求7所述的制备方法,其特征在于:所述氧化剂为过氧化氢、过氧化钠、过氧化钾、氧气、臭氧中的至少一种,所述弱酸为草酸、柠檬酸、碳酸、醋酸、甲酸、苯甲酸中的至少一种。9. preparation method according to claim 7 is characterized in that: described oxidizing agent is at least one in hydrogen peroxide, sodium peroxide, potassium peroxide, oxygen, ozone, and described weak acid is oxalic acid, citric acid, At least one of carbonic acid, acetic acid, formic acid, and benzoic acid. 10.根据权利要求1-3或由权利要求4-10任一所述的制备方法制备的微电极在传感器、可穿戴设备或植入式器件中的应用。10. The application of the microelectrode prepared according to claim 1-3 or by the preparation method described in any one of claims 4-10 in sensors, wearable devices or implantable devices.
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