CN107188111A - The splinter method of MEMS sensor wafer, MEMS sensor wafer - Google Patents
The splinter method of MEMS sensor wafer, MEMS sensor wafer Download PDFInfo
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- CN107188111A CN107188111A CN201710390893.9A CN201710390893A CN107188111A CN 107188111 A CN107188111 A CN 107188111A CN 201710390893 A CN201710390893 A CN 201710390893A CN 107188111 A CN107188111 A CN 107188111A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/001—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same for cutting, cleaving or grinding
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Abstract
The invention discloses a kind of MEMS sensor wafer, the splinter method of MEMS sensor wafer, belong to MEMS sensor field.The MEMS sensor wafer includes the MEMS sensor unit that several are arranged in length and breadth；The back side of each MEMS sensor unit is provided with a silicon cup, position one MEMS sensor structure of correspondence of each silicon cup；Exist between the back side of MEMS sensor wafer, two row MEMS sensor units of arbitrary neighborhood and there is a sliver passage between a sliver passage, two row MEMS sensor units of arbitrary neighborhood；The section of sliver passage is isosceles triangle, and the surface at the base of isosceles triangle and the back side of MEMS sensor wafer is in same plane；Solve the device structure failure easily caused during by mechanical scribing or laser scribing on wafer, the problem of wafer piece rate is low；Dust when reducing scribing has been reached, the effect of dicing efficiency and wafer piece rate is improved.
Description
Technical field
The present embodiments relate to MEMS sensor field, more particularly to a kind of MEMS sensor wafer, MEMS sensor
The splinter method of wafer.
Background technology
Silicon gauge sensor is in structure fabrication, it is necessary to carry out carrying out bulk silicon etching formation silicon cup knot on silicon wafer
Structure, and very thin silicon fiml structure, and the making strain resistor bar on silicon fiml are formed in silicon cup bottom, form sensing unit, silicon table
Operationally using the resistor stripe on silicon fiml, the situation of change of resistance calculates pressure to pressure pressure sensor under different pressures effect
Force value.
Because silicon gauge sensor uses overall wafer processing technology when making, to single silicon gauge pressure pressure
, it is necessary to split to silicon gauge sensor wafer before force snesor is packaged, single silicon gauge is obtained
Sensor chip.In correlation technique, scribing is integrally carried out to wafer mainly using mechanical scribing and the method for laser scribing, with machine
Exemplified by tool scribing, dicing lanes are marked before scribing on wafer, recycle the blade of stable rotation at a high speed to draw wafer
Cut, and cut point is rinsed using coolant simultaneously.
However, because the silicon fiml of silicon gauge sensor is very thin, in using coolant flushing process, silicon fiml is rushed
Hit power and easily occur breakage, cause silicon fiml breakage rate to raise, the reduction of silicon gauge sensor wafer piece rate.
The content of the invention
In order to solve problem of the prior art, sensed the embodiments of the invention provide a kind of MEMS sensor wafer, MEMS
The splinter method of device wafer.The technical scheme is as follows：
First aspect includes some there is provided a kind of micro-electromechanical system (MEMS) sensor wafer, the MEMS sensor wafer
The individual MEMS sensor unit arranged in length and breadth；
The back side of each MEMS sensor unit is provided with a silicon cup, the position correspondence of each silicon cup
One MEMS sensor structure；
Have one between the back side of the MEMS sensor wafer, MEMS sensor unit described in two rows of arbitrary neighborhood
There is a sliver passage between bar sliver passage, the two row MEMS sensor units of arbitrary neighborhood；
Wherein, the section of the sliver passage is isosceles triangle, and the base of the isosceles triangle is passed with the MEMS
The surface at the back side of sensor wafer is in same plane.
Optionally, every sliver passage is parallel with MEMS sensor unit described in each column, or, every sliver leads to
Road is parallel with the often capable MEMS sensor unit.
Optionally, the depth of the sliver passage is less than the depth of the silicon cup.
Second aspect includes there is provided a kind of splinter method of micro-electromechanical system (MEMS) sensor wafer, this method：
Predetermined mask pattern on predetermined mask plate is transferred to the back side of MEMS sensor wafer by photoetching；It is described pre-
The silicon cup that determining the predetermined mask pattern on mask plate at least includes arranging in length and breadth corrodes hole pattern and the sliver passage arranged in length and breadth
There is a sliver passageway pattern between figure, silicon cup corrosion hole pattern described in two rows of arbitrary neighborhood, arbitrary neighborhood
There is a sliver passageway pattern between the two row silicon cup corrosion hole pattern, the sliver passageway pattern is bar graph
Shape；
The back side of the MEMS sensor wafer is corroded according to the predetermined mask pattern after transfer, silicon is obtained
Cup and sliver passage；Position one MEMS sensor structure of correspondence of each silicon cup, the section of the sliver passage
For isosceles triangle, the surface on the base of the isosceles triangle and the back side of the MEMS sensor wafer is put down same
Face；
UV films are pasted at the back side of the MEMS sensor wafer；
Pressure is applied to the back side of the MEMS sensor wafer, the MEMS sensor chip being separated from each other is described
MEMS sensor chip be the back side of the MEMS sensor wafer after stress, split what is obtained along the sliver passage.
Optionally, there is salient angle benefit at the joining of any two sliver passageway patterns in the predetermined mask pattern
Compensation structure.
Optionally, the predetermined mask pattern according to after transfer is carried out to the back side of the MEMS sensor wafer
Corrosion, including：
Using the corrosive liquid of predetermined concentration, according to the predetermined mask pattern after transfer to the MEMS sensor wafer
The back side carry out wet etching.
The beneficial effect that technical scheme provided in an embodiment of the present invention is brought is：
Predetermined mask pattern on predetermined mask plate is transferred to the back side of MEMS sensor wafer by photoetching；It is predetermined to cover
Predetermined mask pattern in film version includes the silicon cup corrosion hole pattern arranged in length and breadth and the sliver passageway pattern arranged in length and breadth, arbitrarily
Exist between adjacent two row silicon cups corrosion hole pattern between a sliver passage, the two row silicon cups corrosion hole pattern of arbitrary neighborhood
In the presence of a sliver passageway pattern；The back side of wafer is corroded according to the predetermined mask pattern after transfer, obtain silicon cup and
Sliver passage；UV films are pasted at the back side of MEMS sensor wafer；Pressure is applied to the back side of MEMS sensor wafer, phase is obtained
The MEMS sensor chip mutually separated, the segmentation to wafer can be just realized without mechanical sliver or laser sliver；Pass through wafer
From the mode of sliver, when solving by mechanical scribing or laser scribing, device structure failure, the wafer on wafer are easily caused
The problem of piece rate is low；Dust when reducing scribing has been reached, the effect of dicing efficiency and wafer piece rate is improved.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, makes required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the partial structural diagram of the MEMS sensor wafer provided according to an illustrative embodiment of the invention；
Fig. 2 is the office of a device cell in the MEMS sensor wafer provided according to an illustrative embodiment of the invention
Portion's structural representation；
Fig. 3 is the section of a MEMS sensor unit in the wafer provided according to an illustrative embodiment of the invention
Figure；
Fig. 4 is the flow of the splinter method of the MEMS sensor wafer provided according to an illustrative embodiment of the invention
Figure；
Fig. 5 is that the part of the predetermined mask pattern of the predetermined mask plate provided according to an illustrative embodiment of the invention is shown
It is intended to；
Fig. 6 is that the back side of the MEMS sensor wafer provided according to an illustrative embodiment of the invention is pasted after UV films,
The partial structural diagram of a MEMS sensor unit in MEMS sensor wafer；
Fig. 7 is that the back side for the MEMS sensor wafer that an illustrative embodiment of the invention is provided is pasted after UV films, MEMS
The profile of a MEMS sensor unit in sensor wafer.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is refer to, the local knot of the MEMS sensor wafer provided it illustrates an illustrative embodiment of the invention
Structure schematic diagram.
As shown in figure 1, MEMS (Microelectro Mechanical Systems, the MEMS) sensor is brilliant
Circle includes several MEMS sensor units 11 arranged in length and breadth.
The back side of each MEMS sensor unit 11 is provided with a silicon cup 12, the position correspondence one of each silicon cup
MEMS sensor structure.
There is a sliver between the back side of MEMS sensor wafer, two row MEMS sensor units 11 of arbitrary neighborhood
There is a sliver passage 13 between passage 13, two row MEMS sensor units 11 of arbitrary neighborhood.
The partial structural diagram for showing a MEMS sensor unit in MEMS sensor wafer exemplary Fig. 2,
20 represent the front of wafer, and 21 represent the back side of wafer, from the back side 21 of wafer, and a device cell includes sliver passage 13
With a silicon cup 12.
Wherein, the section of sliver passage is isosceles triangle, the base of isosceles triangle and the back of the body of MEMS sensor wafer
The surface in face is in same plane.
The profile for showing a MEMS sensor unit in MEMS sensor wafer exemplary Fig. 3, sliver passage
13 profile is isosceles triangle.
Optionally, two base angles of isosceles triangle are 54.74 °.
Optionally, the Breadth Maximum of sliver passage is 100 to 200 μm, and the depth of sliver passage is 70 to 140 μm.
In the alternative embodiment based on embodiment illustrated in fig. 1, every sliver passage is put down with each column MEMS sensor unit
OK, or, every sliver passage is parallel with often row MEMS sensor unit；Or, every sliver passage and each column MEMS sensor
Unit is parallel, and every sliver passage is parallel with often row MEMS sensor unit.
In the alternative embodiment based on embodiment illustrated in fig. 1, the depth of sliver passage is less than silicon cup depth.
Due to the crystal structure that MEMS sensor wafer is ordered into, in MEMS sensor wafer stress, MEMS sensor
Wafer itself can be split along sliver passage, and MEMS sensor wafer is split into several MEMS sensor chips.
In summary, MEMS sensor wafer provided in an embodiment of the present invention, including several MEMS arranged in length and breadth are passed
Sensor cell, the back side of each MEMS sensor unit is provided with a silicon cup, at the back side of MEMS sensor wafer, any phase
Exist between two adjacent row MEMS sensor units and deposited between a sliver passage, two row MEMS sensor units of arbitrary neighborhood
In a sliver passage, the section of sliver passage is isosceles triangle, in MEMS sensor wafer stress, and MEMS sensor is brilliant
Circle is split into several chips along the sliver passage of wafer rear, can just be realized pair without mechanical sliver or laser sliver
The segmentation of MEMS sensor wafer；By way of wafer is from sliver, when solving by mechanical sliver or laser sliver, easily
Cause device structure failure on wafer, the problem of wafer piece rate is low；Dust when reducing sliver has been reached, sliver effect is improved
The effect of rate and wafer piece rate.
Optionally, MEMS sensor wafer provided in an embodiment of the present invention is silicon gauge sensor wafer, and MEMS is passed
Sensor cell is silicon gauge sensor unit, obtains silicon gauge sensor after silicon gauge sensor wafer sliver
Chip.
Arranged in length and breadth on silicon gauge sensor several silicon gauge sensor units, silicon gauge sensor
In structure fabrication, it is necessary to carry out bulk silicon etching formation structure of silicon cup, and thin silicon fiml structure is formed in silicon cup bottom, in silicon fiml
Upper making resistor stripe, silicon gauge sensor is operationally to utilize the resistance under different pressures effect of the resistor stripe on silicon fiml
Situation of change determine pressure value；When using mechanical dicing method to silicon gauge sensor scribing, during due to scribing
Dicing paths and coolant flushing strength are difficult to control to, and are easily damaged silicon fiml；Laser scribing method is being used to silicon gauge
During sensor scribing, damage can be produced to crystal column surface, dicing lanes can also produce a large amount of dust, and silicon gauge sensor
Silicon fiml characteristic make drifting dust processing can not be carried out in scribing processes, cause silicon gauge sensor chip after Wafer Dicing to be pollinated
Dirt is seriously polluted, reduces the sensitivity of silicon gauge sensor chip.
MEMS sensor wafer provided in an embodiment of the present invention, the same of bulk silicon etching is carried out by MEMS sensor wafer
When, corrode and sliver passage, it is only necessary to which pressure is applied to MEMS sensor wafer back part, it is not necessary to laser or mechanical sliver work
Tool, it is possible to MEMS sensor wafer is split into several MEMS sensor chips, sliver efficiency and piece rate is improved,
Reduce the dust produced during sliver.
Such as：Silicon gauge sensor wafer including sliver passage, it is only necessary to silicon gauge sensor wafer
The back side apply pressure, it is not necessary to laser or mechanical bit are split to silicon gauge sensor wafer, it is possible to by silicon
Gauge sensor is split into several MEMS sensor chips.
Fig. 4 is refer to, the sliver side of the MEMS sensor wafer provided it illustrates an illustrative embodiment of the invention
The flow chart of method.As shown in figure 4, the splinter method of the MEMS sensor wafer may comprise steps of：
Step 401, the predetermined mask pattern on predetermined mask plate is transferred to the back of the body of MEMS sensor wafer by photoetching
Face.
Predetermined mask pattern on predetermined mask plate at least includes the silicon cup corrosion hole pattern arranged in length and breadth and arranged in length and breadth
Sliver passageway pattern, there is sliver passageway pattern, arbitrary neighborhood between the two row silicon cups corrosion hole pattern of arbitrary neighborhood
Two row silicon cups corrosion hole pattern between there is sliver passageway pattern, sliver passageway pattern is flagpole pattern.
Optionally, each sliver passageway pattern and each column silicon cup corrosion hole pattern are parallel, or, each sliver passageway pattern with
Often row silicon cup corrosion hole pattern is parallel；Or, each sliver passageway pattern is parallel with each column silicon cup corrosion hole pattern, each sliver
Passageway pattern is parallel with often row silicon cup corrosion hole pattern.
Before the predetermined mask pattern on predetermined mask plate is transferred into the back side of MEMS sensor wafer, MEMS sensings
MEMS sensor structure has been formd on device wafer.
Optionally, the width of sliver passageway pattern is 100 to 200 μm.Optionally, the width of each sliver passageway pattern can
With unequal.
Optionally, there is convex corner compensation structure at the joining of any two sliver passageway pattern in predetermined mask pattern,
Convex corner compensation structure is triangular structure.
Due to the anisotropic etch characteristic of body silicon, easily occurs serious cutting phenomenon at salient angle, it is therefore desirable to carry out
Convex corner compensation.It is salient angle region at the joining of any two sliver passages, cutting, therefore designed mask occurs in corrosion
, it is necessary to which increase salient angle is mended at the joining of any two sliver passageway pattern in predetermined mask pattern during mask pattern in version
Compensation structure；Convex corner compensation structure is triangular structure.
As shown in figure 5, including silicon cup corrosion hole pattern 51 and the sliver passageway pattern arranged in length and breadth on predetermined mask pattern
52, there is a sliver passageway pattern 52, two row silicon of arbitrary neighborhood in two row silicon cups of arbitrary neighborhood between corroding hole pattern 51
There is a sliver passageway pattern 52 between cup corrosion hole pattern 51；Exist at the joining of any two sliver passageway pattern 52
Convex corner compensation structure 41, convex corner compensation structure 41 is triangular structure；Sliver passageway pattern 52 is flagpole pattern.
Step 402, the back side of MEMS sensor wafer is corroded according to the predetermined mask pattern after transfer, obtains silicon
Cup and sliver passage.
Position one MEMS sensor structure of correspondence of each silicon cup, the section of sliver passage is isosceles triangle,
The surface at the base of isosceles triangle and the back side of MEMS sensor wafer is in approximately the same plane.
After etching, the region that four adjacent sliver passages are surrounded is a MEMS sensor unit.
Using the corrosive liquid of predetermined concentration, the back side of MEMS sensor wafer is entered according to the predetermined mask pattern after transfer
Row wet etching.
Optionally, the corrosive liquid of predetermined concentration is strong basicity etchant solution.
When wet etching is completed, there is silicon cup and sliver passage in the back side of MEMS sensor wafer.
Because alkaline corrosion liquid is anisotropic etch, the corresponding MEMS sensor wafer meeting of sliver passageway pattern after corrosion
Form the oblique etch pit of predetermined angular, namely sliver passage.The section of sliver passage is isosceles triangle.
Optionally, predetermined angular is 54.74 °.
In wet etching, because the width of sliver passageway pattern is limited, the corresponding wafer of sliver passageway pattern is in corrosion
During to desired depth, 111 faces of body silicon can form mutually isolated, and alkali liquid corrosion can self termination.Optionally, it is predetermined during self termination
Depth is 70 to 140 μm, namely the depth of sliver passage is 70 to 140 μm.
Because corrosion depth is less than the height of MEMS sensor wafer, MEMS sensor wafer is still an entirety.
Optionally,, can each device cell after etching due to the convex corner compensation structure in predetermined mask pattern
Four angles it is complete, smooth.
Step 403, UV films are pasted at the back side of MEMS sensor wafer.
The back side that Fig. 6 schematically illustrates MEMS sensor wafer is pasted after UV films, one in MEMS sensor wafer
The partial structural diagram of MEMS sensor unit, UV films 61 are pasted onto the back side of MEMS sensor wafer.
The back side that Fig. 7 schematically illustrates MEMS sensor wafer is pasted after UV films, one in MEMS sensor wafer
The profile of MEMS sensor unit, the profile of sliver passage 13 is isosceles triangle, and the depth of sliver passage 13 is less than silicon
The depth of cup 12, UV films 61 are pasted onto the back side of MEMS sensor wafer.
Step 404, pressure, the MEMS sensor chip being separated from each other are applied to the back side of MEMS sensor wafer.
The wafer for pasting UV films is fixed in the special O-shaped iron hoop of sliver, using supporting table to MEMS sensor wafer
The back side carry out application predetermined pressure, the MEMS sensor chip being separated from each other.
MEMS sensor chip be the back side of MEMS sensor wafer after stress, split what is obtained along sliver passage.
Optionally, the size of predetermined pressure is 1KPa to 1MPa.
As shown in fig. 6, applying predetermined pressure along direction S to the back side of MEMS sensor wafer using supporting table, phase is obtained
The chip mutually separated.
In course of exerting pressure, because there is the sliver passage arranged in length and breadth, MEMS sensings in the back side of MEMS sensor wafer
Device wafer will produce the effect of automatic sliver, the MEMS sensor chip being separated from each other.
Because the back side of MEMS sensor wafer is pasted with UV films, although MEMS is sensed MEMS sensor wafer after cleaving
Device chip has been separated, but MEMS sensor wafer still keeps an entirety in shape.
In summary, the splinter method of MEMS sensor wafer provided in an embodiment of the present invention, is covered by photoetching by predetermined
Predetermined mask pattern in film version is transferred to the back side of MEMS sensor wafer；Predetermined mask pattern on predetermined mask plate includes
The silicon cup corrosion hole pattern arranged in length and breadth and the sliver passageway pattern arranged in length and breadth, the two row silicon cups corrosion hole pattern of arbitrary neighborhood
Between exist between sliver passageway pattern, the two row silicon cups corrosion hole pattern of arbitrary neighborhood and there is a sliver passage figure
Shape, sliver passageway pattern is flagpole pattern；The back side of wafer is corroded according to the predetermined mask pattern after transfer, silicon is obtained
Cup and sliver passage；UV films are pasted at the back side of MEMS sensor wafer；Pressure is applied to the back side of MEMS sensor wafer, obtained
To the MEMS sensor chip being separated from each other, the segmentation to wafer can be just realized without mechanical sliver or laser sliver；Pass through
From the mode of sliver, when solving by mechanical scribing or laser scribing, device structure failure, the wafer on wafer are easily caused
The problem of piece rate is low；Dust when reducing scribing has been reached, the effect of dicing efficiency and wafer piece rate is improved.
It should be noted that：The embodiments of the present invention are for illustration only, and the quality of embodiment is not represented.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (6)
1. a kind of micro-electromechanical system (MEMS) sensor wafer, it is characterised in that the MEMS sensor wafer is vertical including several
The MEMS sensor unit of horizontally-arranged row；
The back side of each MEMS sensor unit is provided with a silicon cup, the position correspondence one of each silicon cup
MEMS sensor structure；
Split between the back side of the MEMS sensor wafer, MEMS sensor unit described in two rows of arbitrary neighborhood in the presence of one
There is a sliver passage between piece passage, the two row MEMS sensor units of arbitrary neighborhood；
Wherein, the section of the sliver passage is isosceles triangle, the base of the isosceles triangle and the MEMS sensor
The surface at the back side of wafer is in same plane.
2. MEMS sensor wafer according to claim 1, it is characterised in that described in every sliver passage and each column
MEMS sensor unit is parallel, and/or, every sliver passage is parallel with the often capable MEMS sensor unit.
3. MEMS sensor wafer according to claim 1, it is characterised in that the depth of the sliver passage is less than described
The depth of silicon cup.
4. a kind of splinter method of micro-electromechanical system (MEMS) sensor wafer, it is characterised in that methods described includes：
Predetermined mask pattern on predetermined mask plate is transferred to the back side of MEMS sensor wafer by photoetching；It is described to make a reservation for cover
Predetermined mask pattern in film version at least includes the silicon cup corrosion hole pattern arranged in length and breadth and the sliver passageway pattern arranged in length and breadth,
There is a sliver passageway pattern, two row institutes of arbitrary neighborhood between silicon cup corrosion hole pattern described in two rows of arbitrary neighborhood
State between silicon cup corrodes hole pattern and there is a sliver passageway pattern, the sliver passageway pattern is flagpole pattern；
The back side of the MEMS sensor wafer is corroded according to the predetermined mask pattern after transfer, obtain silicon cup and
Sliver passage；Position one MEMS sensor structure of correspondence of each silicon cup, the section of the sliver passage for etc.
The surface at the back side of lumbar triangle shape, the base of the isosceles triangle and the MEMS sensor wafer is in approximately the same plane；
UV films are pasted at the back side of the MEMS sensor wafer；
Pressure, the MEMS sensor chip being separated from each other, the MEMS are applied to the back side of the MEMS sensor wafer
Sensor chip be the back side of the MEMS sensor wafer after stress, split what is obtained along the sliver passage.
5. splinter method according to claim 4, it is characterised in that split in the predetermined mask pattern described in any two
There is convex corner compensation structure at the joining of piece passageway pattern.
6. the splinter method according to claim 4 or 5, it is characterised in that the predetermined mask according to after transfer
Figure corrodes to the back side of the MEMS sensor wafer, including：
Using the corrosive liquid of predetermined concentration, according to the back of the body of the predetermined mask pattern after transfer to the MEMS sensor wafer
Face carries out wet etching.
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| CN201710390893.9A CN107188111A (en) | 2017-05-27 | 2017-05-27 | The splinter method of MEMS sensor wafer, MEMS sensor wafer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109928358A (en) * | 2017-11-29 | 2019-06-25 | 台湾积体电路制造股份有限公司 | It is used to form the joint technology of semiconductor device structure |
| CN114571540A (en) * | 2022-03-08 | 2022-06-03 | 深圳市海目星激光智能装备股份有限公司 | Ultrasonic wave lobe method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1122518A (en) * | 1994-05-23 | 1996-05-15 | 国际商业机器公司 | Method for formjing rows of partially separated thin film elements |
| US6300224B1 (en) * | 1999-07-30 | 2001-10-09 | Nippon Sheet Glass Co., Ltd. | Methods of dicing semiconductor wafer into chips, and structure of groove formed in dicing area |
| CN1541257A (en) * | 2001-08-10 | 2004-10-27 | �ն��繤��ʽ���� | Adhesive film for dicing and dicing method |
| CN101026125A (en) * | 2006-02-21 | 2007-08-29 | 探微科技股份有限公司 | Method of Dicing Wafers |
| CN205752133U (en) * | 2016-01-11 | 2016-11-30 | 亚昕科技股份有限公司 | Wafer structure capable of easily rolling and splitting |
| CN106374020A (en) * | 2016-11-02 | 2017-02-01 | 厦门市三安光电科技有限公司 | Manufacturing method of thin film chip and thin film chip thereof |
-
2017
- 2017-05-27 CN CN201710390893.9A patent/CN107188111A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1122518A (en) * | 1994-05-23 | 1996-05-15 | 国际商业机器公司 | Method for formjing rows of partially separated thin film elements |
| US6300224B1 (en) * | 1999-07-30 | 2001-10-09 | Nippon Sheet Glass Co., Ltd. | Methods of dicing semiconductor wafer into chips, and structure of groove formed in dicing area |
| CN1541257A (en) * | 2001-08-10 | 2004-10-27 | �ն��繤��ʽ���� | Adhesive film for dicing and dicing method |
| CN101026125A (en) * | 2006-02-21 | 2007-08-29 | 探微科技股份有限公司 | Method of Dicing Wafers |
| CN205752133U (en) * | 2016-01-11 | 2016-11-30 | 亚昕科技股份有限公司 | Wafer structure capable of easily rolling and splitting |
| CN106374020A (en) * | 2016-11-02 | 2017-02-01 | 厦门市三安光电科技有限公司 | Manufacturing method of thin film chip and thin film chip thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109928358A (en) * | 2017-11-29 | 2019-06-25 | 台湾积体电路制造股份有限公司 | It is used to form the joint technology of semiconductor device structure |
| CN109928358B (en) * | 2017-11-29 | 2021-12-31 | 台湾积体电路制造股份有限公司 | Bonding process for forming semiconductor device structure |
| CN114571540A (en) * | 2022-03-08 | 2022-06-03 | 深圳市海目星激光智能装备股份有限公司 | Ultrasonic wave lobe method |
| CN114571540B (en) * | 2022-03-08 | 2024-03-19 | 海目星激光科技集团股份有限公司 | Ultrasonic splitting method |
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Application publication date: 20170922 |