CN107172819A - The method that high frequency flexible print circuit board is made using ion implanting and plating mode - Google Patents
The method that high frequency flexible print circuit board is made using ion implanting and plating mode Download PDFInfo
- Publication number
- CN107172819A CN107172819A CN201710480430.1A CN201710480430A CN107172819A CN 107172819 A CN107172819 A CN 107172819A CN 201710480430 A CN201710480430 A CN 201710480430A CN 107172819 A CN107172819 A CN 107172819A
- Authority
- CN
- China
- Prior art keywords
- high frequency
- ion implanting
- circuit board
- plating mode
- flexible print
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000007747 plating Methods 0.000 title claims abstract description 20
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims abstract description 20
- 239000000843 powder Substances 0.000 claims abstract description 20
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims abstract description 12
- 239000004810 polytetrafluoroethylene Substances 0.000 claims abstract description 12
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 9
- -1 polytetrafluoroethylene Polymers 0.000 claims abstract description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 9
- 229910001431 copper ion Inorganic materials 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- 238000011536 re-plating Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 3
- 239000002344 surface layer Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 2
- 238000009713 electroplating Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920006361 Polyflon Polymers 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/09—Treatments involving charged particles
- H05K2203/092—Particle beam, e.g. using an electron beam or an ion beam
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses the method that the high frequency FPC of 2.2≤Dk ＜ 6.5 are made using turning, ion implanting and plating mode, using aluminum oxide, titanium dioxide, silica hybrid ceramic powder and polytetrafluoroethylene (PTFE) powder are as raw material and film is made, line map is formed on film using ion implanting and electro-plating method.The present invention improves product high frequency, heat resistance, shortens Making programme, improves production efficiency, reduces cost, has the advantages that environment-friendly.
Description
Technical field
It is specifically that one kind uses turning, ion implanting and electricity the present invention relates to flexible print circuit board preparation method field
The method that plating mode makes the high frequency FPC of 2.2≤Dk ＜ 6.5.
Background technology
Flexible print circuit board（FPC）Also known as " soft board ", it is the printed circuit board (PCB) that is made of flexible insulating substrate.It is existing
Technology flexible print circuit board is first to use polyimide film, polyester film production flexibility coat copper plate, then is made on flexibility coat copper plate
Make the flexible print circuit board that line map will be made through techniques such as overexposure, development, erosion copper, environmental pollution, and system can be caused
Make cost high.And flexible print circuit board product only has the FPC of dielectric constant Dk=3.0 or so made from prior art, does not have
The high frequency FPC products of 2.2≤Dk ＜ 6.5, and existing FPC high frequency characteristicses are poor, and heat-resisting quantity is poor.
It is soft that the content of the invention makes high frequency it is an object of the invention to provide one kind using turning, ion implanting and plating mode
Property printed substrate method, it is high with the pollution environment, the cost that solve the presence of prior art flexible wires printing path board manufacturing method,
And the problem of obtained product high frequency characteristics difference.
In order to achieve the above object, the technical solution adopted in the present invention is：
The method that high frequency flexible print circuit board is made using turning, ion implanting and plating mode, it is characterised in that：Including
Following steps：
（1）, by aluminum oxide, titanium dioxide, silica hybrid ceramic powder and polytetrafluoroethylene (PTFE) powder mixing aftershaping sinter
Blank is processed into, then blank is lathed film；
（2）, according to needed for circuit design in step（1）Drilled on obtained film；
（3）, using the method for first ion implanting re-plating, in step（2）The double superficial layer injection copper ions of obtained film, simultaneously
Internal surface of hole layer injection copper ion；Plating mode is recycled to have the place deposition copper formation circuit of copper ion in the double superficial layers of film
Figure, while internal surface of hole layer deposited metal copper, is made the high frequency FPC of 2.2≤Dk ＜ 6.5.
The method that described use turning, ion implanting and plating mode makes the high frequency FPC of 2.2≤Dk ＜ 6.5, its feature
It is：Step（1）In, the thickness for the film that turning is formed is 0.01-0.075mm.
The method that described use turning, ion implanting and plating mode makes the high frequency FPC of 2.2≤Dk ＜ 6.5, its feature
It is：Step（1）In, ceramic powder is silica, aluminum oxide, the wherein mixture of titanium dioxide three, quality of alumina
It is that the 10-60% of mixture gross mass, surplus are silica for the 30-40% of mixture gross mass, titanium dioxide quality；Ceramics
The gross mass of powder accounts for the 30%-40% of ceramic powder and polytetrafluoroethylene (PTFE) powder gross mass.
The method that described use turning, ion implanting and plating mode makes the high frequency FPC of 2.2≤Dk ＜ 6.5, its feature
It is：Step（1）In, it is molded compressive load per unit area 100kg/cm2, molding time 50h, 380 DEG C of temperature, sintering time during sintering
50h。
Compared with the prior art, beneficial effects of the present invention are embodied in：
The present invention does not use exposure, development, the technique of etching copper, but directly on film first ion implanting re-plating side
Method makes required line map, improves product high frequency, heat resistance, shortens Making programme, improves production efficiency, reduces
Cost.The inventive method does not have a high pollution processes such as copper foil surface processing, electroless copper plating, therefore with environment-friendly excellent
Point.
Low polyflon, aluminum oxide, titanium dioxide, titanium dioxide is lost well using high frequency performance in the inventive method
Silicon is as raw material, and product high frequency characteristics is good, is lost low.
Embodiment
The method that the high frequency FPC of 2.2≤Dk ＜ 6.5 are made using turning, ion implanting and plating mode, including following step
Suddenly：
（1）, by aluminum oxide, titanium dioxide, silica hybrid ceramic powder and polytetrafluoroethylene (PTFE) powder mixing aftershaping sinter
Blank is processed into, then blank is lathed film；
（2）, according to needed for circuit design in step（1）Drilled on obtained film；
（3）, using the method for first ion implanting re-plating, in step（2）The double superficial layer injection copper ions of obtained film, simultaneously
Internal surface of hole layer injection copper ion；Plating mode is recycled to have the place deposition copper formation circuit of copper ion in the double superficial layers of film
Figure, while internal surface of hole layer deposited metal copper, is made high frequency flexible print circuit board.
Step（1）In, the thickness of the film of turning is 0.01-0.075mm.
Step（1）In, ceramic powder is silica, aluminum oxide, the wherein mixture of titanium dioxide three, aluminum oxide
Amount is that the 30-40% of mixture gross mass, titanium dioxide quality are that the 10-60% of mixture gross mass, surplus are silica；Pottery
The gross mass of ceramic powder accounts for the 30%-40% of ceramic powder and polytetrafluoroethylene (PTFE) powder gross mass.
Step（1）In, briquetting pressure 100kg/cm2, molding time 50h, 380 DEG C of temperature, time 50h during sintering.
Step（3）2.2≤Dk ＜ 6.5 high frequency FPC is made.
Claims (5)
1. the high frequency FPC of 2.2≤Dk ＜ 6.5 method is made using turning, ion implanting and plating mode, it is characterised in that：Bag
Include following steps：
（1）, by aluminum oxide, titanium dioxide, silica hybrid ceramic powder and polytetrafluorethylepowder powder mixing aftershaping sinter
Formed blank, then by blank turning be film；
（2）, according to needed for circuit design in step（1）Drilled on obtained film；
（3）, using the method for first ion implanting re-plating, in step（2）The double superficial layer injection copper ions of obtained film, simultaneously
Internal surface of hole layer injection copper ion；Plating mode is recycled to have the place deposition copper formation circuit of copper ion in the double superficial layers of film
Figure, while through-hole inner surface layer deposited metal copper, is made high frequency flexible print circuit board.
2. use turning according to claim 1, ion implanting and plating mode make high frequency flexible print circuit board
Method, it is characterised in that：Step（1）In, the thickness of the film formed after turning is 0.01-0.075mm.
3. use turning according to claim 1, ion implanting and plating mode make high frequency flexible print circuit board
Method, it is characterised in that：Step（1）In, ceramic powder be silica, aluminum oxide, the mixture of titanium dioxide three, wherein
Quality of alumina is that the 30-40% of mixture gross mass, titanium dioxide quality are that the 10-60% of mixture gross mass, surplus are two
Silica；The gross mass of ceramic powder accounts for the 30%-40% of ceramic powder and polytetrafluoroethylene (PTFE) powder gross mass.
4. use turning according to claim 1, ion implanting and plating mode make high frequency flexible print circuit board
Method, it is characterised in that：Step（1）In, briquetting pressure 100kg/cm2, sintering when 380 DEG C of temperature, sintering time 50h.
5. use turning according to claim 1, ion implanting and plating mode make high frequency flexible print circuit board
Method, it is characterised in that：2.2≤Dk ＜ 6.5 high frequency FPC is made by the way of turning, ion implanting, plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710480430.1A CN107172819A (en) | 2017-06-22 | 2017-06-22 | The method that high frequency flexible print circuit board is made using ion implanting and plating mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710480430.1A CN107172819A (en) | 2017-06-22 | 2017-06-22 | The method that high frequency flexible print circuit board is made using ion implanting and plating mode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107172819A true CN107172819A (en) | 2017-09-15 |
Family
ID=59819118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710480430.1A Pending CN107172819A (en) | 2017-06-22 | 2017-06-22 | The method that high frequency flexible print circuit board is made using ion implanting and plating mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107172819A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107864575A (en) * | 2017-11-09 | 2018-03-30 | 建业科技电子（惠州）有限公司 | Without PIN positioning and processing methods |
| CN112954882A (en) * | 2021-01-27 | 2021-06-11 | 深圳市宏联电路有限公司 | Flexible printed circuit board and method for manufacturing circuit board by adopting ion implantation mode |
| US11549035B2 (en) | 2020-12-16 | 2023-01-10 | Saint-Gobain Performance Plastics Corporation | Dielectric substrate and method of forming the same |
| US11596064B2 (en) | 2020-07-28 | 2023-02-28 | Saint-Gobain Performance Plastics Corporation | Dielectric substrate and method of forming the same |
| US12173201B2 (en) | 2020-12-16 | 2024-12-24 | Versiv Composites Limited | Copper-clad laminate and method of forming the same |
| US12262468B2 (en) | 2020-07-28 | 2025-03-25 | Versiv Composites Limited | Copper-clad laminate and method of forming the same |
| US12391850B2 (en) | 2020-12-16 | 2025-08-19 | Versiv Composites Limited | Dielectric substrate and method of forming the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652055A (en) * | 1994-07-20 | 1997-07-29 | W. L. Gore & Associates, Inc. | Matched low dielectric constant, dimensionally stable adhesive sheet |
| CN101003439A (en) * | 2006-11-09 | 2007-07-25 | 中国矿业大学 | Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics |
| CN102260378A (en) * | 2011-05-06 | 2011-11-30 | 广东生益科技股份有限公司 | Composite material, high-frequency circuit board manufactured therefrom and manufacturing method of high-frequency circuit board |
| CN105873381A (en) * | 2015-11-06 | 2016-08-17 | 珠海市创元开耀电子材料有限公司 | HDI circuit board and manufacture method thereof |
-
2017
- 2017-06-22 CN CN201710480430.1A patent/CN107172819A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5652055A (en) * | 1994-07-20 | 1997-07-29 | W. L. Gore & Associates, Inc. | Matched low dielectric constant, dimensionally stable adhesive sheet |
| CN101003439A (en) * | 2006-11-09 | 2007-07-25 | 中国矿业大学 | Ion implantation of cupper, nickel as pretreatment technique for electroless copper on surface of ceramics |
| CN102260378A (en) * | 2011-05-06 | 2011-11-30 | 广东生益科技股份有限公司 | Composite material, high-frequency circuit board manufactured therefrom and manufacturing method of high-frequency circuit board |
| CN105873381A (en) * | 2015-11-06 | 2016-08-17 | 珠海市创元开耀电子材料有限公司 | HDI circuit board and manufacture method thereof |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107864575A (en) * | 2017-11-09 | 2018-03-30 | 建业科技电子（惠州）有限公司 | Without PIN positioning and processing methods |
| US11596064B2 (en) | 2020-07-28 | 2023-02-28 | Saint-Gobain Performance Plastics Corporation | Dielectric substrate and method of forming the same |
| US11805600B2 (en) | 2020-07-28 | 2023-10-31 | Saint-Gobain Performance Plastics Corporation | Dielectric substrate and method of forming the same |
| US12250767B2 (en) | 2020-07-28 | 2025-03-11 | Versiv Composites Limited | Dielectric substrate and method of forming the same |
| US12262468B2 (en) | 2020-07-28 | 2025-03-25 | Versiv Composites Limited | Copper-clad laminate and method of forming the same |
| US11549035B2 (en) | 2020-12-16 | 2023-01-10 | Saint-Gobain Performance Plastics Corporation | Dielectric substrate and method of forming the same |
| US12049577B2 (en) | 2020-12-16 | 2024-07-30 | Versiv Composites Limited | Dielectric substrate and method of forming the same |
| US12173201B2 (en) | 2020-12-16 | 2024-12-24 | Versiv Composites Limited | Copper-clad laminate and method of forming the same |
| US12391850B2 (en) | 2020-12-16 | 2025-08-19 | Versiv Composites Limited | Dielectric substrate and method of forming the same |
| CN112954882A (en) * | 2021-01-27 | 2021-06-11 | 深圳市宏联电路有限公司 | Flexible printed circuit board and method for manufacturing circuit board by adopting ion implantation mode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107172819A (en) | The method that high frequency flexible print circuit board is made using ion implanting and plating mode | |
| CN102260378B (en) | Composite material, high-frequency circuit board manufactured therefrom and manufacturing method of high-frequency circuit board | |
| TWI828900B (en) | Thick film resistors having customizable resistances and methods of manufacture | |
| CN110181904A (en) | A kind of high frequency is without glue double side flexible copper coated board and preparation method thereof | |
| CN102009515B (en) | Two-layer-method double-sided flexible CCL (Copper-Clad Laminate) and manufacture method thereof | |
| CN108901130A (en) | A kind of high-frequency high-speed flexibility coat copper plate and preparation method thereof | |
| JP2008218966A (en) | Method for manufacturing printed circuit board with built-in capacitor, and printed circuit board with built-in capacitor | |
| CN107278031A (en) | The high frequency FPC of 6.5≤Dk≤10 is made using turning ion implanting plating mode | |
| CN107509308A (en) | The high frequency FPC of 6.5≤Dk≤10 is made using turning ion implanting plating mode | |
| CN102244981B (en) | Novel printed circuit board (PCB) manufacturing technology | |
| Imanaka et al. | Dielectric and insulating properties of embedded capacitor for flexible electronics prepared by aerosol-type nanoparticle deposition | |
| CN108155103A (en) | A kind of aluminum nitride ceramic copper-clad substrate and preparation method thereof | |
| US7430106B2 (en) | Materials for forming capacitor layer and printed wiring board having embedded capacitor circuit obtained by using the same | |
| CN107172820A (en) | The method that the copper-clad plates of 2.2≤Dk ＜ 6.5 are made using ion implanting plating mode | |
| CN107645852B (en) | Double-sided copper foil surface treatment process for high-frequency printed circuit board | |
| CN118899228A (en) | NBF-based FCBGA substrate manufacturing method and FCBGA substrate | |
| CN114867195B (en) | A multilayer circuit board and its preparation process and application | |
| CN117363013A (en) | Polycool imine insulation-nano silver conductive circuit and preparation method and application thereof | |
| CN102427666A (en) | Manufacturing method of high-frequency microwave circuit board substrate | |
| CN110167278A (en) | A kind of PCB thickness copper sheet circuit manufacturing method | |
| CN100440401C (en) | A kind of manufacturing method of tantalum capacitor | |
| CN113214582A (en) | Preparation process of PTFE (polytetrafluoroethylene) film with spherical ceramic powder as filler | |
| CN107278061A (en) | A kind of 2.2≤Dk ＜ 6.5 HDI board manufacturing methods | |
| JP2003309037A (en) | Laminated electronic component and method of manufacturing the same | |
| CN216217713U (en) | DPC ceramic multilayer circuit board structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170915 |
|
| RJ01 | Rejection of invention patent application after publication |