CN107145854B - Array substrate, manufacturing method thereof, and fingerprint identification device - Google Patents

Abstract

The present invention provides an array substrate, comprising a substrate, a self-luminous unit and a plurality of photodetection units arranged on the substrate, and the orthographic projection of each photodetection unit on the substrate is illuminated by the self-luminescence The orthographic projection of the cell on the substrate surrounds. Correspondingly, the present invention also provides a manufacturing method of an array substrate and a fingerprint identification device. The invention can improve the utilization rate of light, so that the photoelectric detection can improve the signal-to-noise ratio and improve the fingerprint identification effect.

Description

Array substrate, manufacturing method thereof, and fingerprint identification device

technical field

The invention relates to the field of photoelectric detection, in particular to an array substrate, a manufacturing method thereof, and a fingerprint identification device.

Background technique

Fingerprint recognition uses the principle of photoelectric detection to obtain different electrical signals according to the light reflected by the valleys and ridges of the fingerprint, and then obtains the fingerprint image. The structure of the fingerprint identification device in the prior art is as follows: a plurality of organic light emitting diodes and photodiodes corresponding to the organic light emitting diodes are arranged on a substrate, and the photodiodes are arranged under the corresponding organic light emitting diodes. When performing fingerprint recognition, the organic light-emitting diode emits light upwards, and the light is reflected by the finger to the photodiode below. The photodiode converts the light signal into a corresponding electrical signal. The magnitudes of the electrical signals are different, so that the detection circuit obtains the image of the fingerprint according to the electrical signals corresponding to the valleys and ridges.

The signal-to-noise ratio is an important factor in evaluating the effect of photoelectric detection, and the improvement of the signal-to-noise ratio can improve the accuracy and efficiency of photoelectric detection. Therefore, it is necessary to improve the signal-to-noise ratio of photoelectric detection through various ways, and then improve the accuracy of fingerprint recognition.

SUMMARY OF THE INVENTION

The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an array substrate and its manufacturing method, and a fingerprint identification device to improve the signal-to-noise ratio of photoelectric detection, thereby improving the accuracy of fingerprint identification.

In order to solve one of the above technical problems, the present invention provides an array substrate, including a substrate, a self-luminous unit and a plurality of photodetection units arranged on the substrate, each of the photodetection units on the substrate The orthographic projections on are surrounded by the orthographic projections of the self-illuminating units on the substrate.

Preferably, the self-luminous unit includes a plurality of first light emitting parts extending along a plurality of first directions and a plurality of second light emitting parts extending along a second direction, the first light emitting parts and the second light emitting parts intersect each other To form a mesh structure, the mesh structure forms a mesh projection on the substrate, the photoelectric detection units correspond to the grid of the mesh projection, and each photodetection unit faces the The orthographic projection of the substrate is located in the corresponding grid.

Preferably, the boundary of the orthographic projection of the photodetection unit toward the substrate coincides with the inner boundary of the grid corresponding to the photodetection unit.

Preferably, the self-luminous unit is located on a side of the substrate facing the light-emitting direction, and the photodetection unit is located on the other side of the substrate facing away from the light-emitting direction.

Preferably, a thin film transistor corresponding to the photodetection unit and a first electrode connected between the thin film transistor and the photodetection device are also arranged on the substrate, a part of the first electrode It is arranged on the drain of the thin film transistor, the photodetection unit is located on the side of the first electrode away from the substrate, and the photodetection unit is further provided with a second electrode on the surface away from the substrate.

Correspondingly, the present invention also provides a method for manufacturing an array substrate, including:

provide a substrate;

forming a plurality of photodetection units on the substrate;

A self-luminous unit is formed on the substrate, wherein the orthographic projection of each photodetection unit on the substrate is surrounded by the orthographic projection of the self-luminous unit on the substrate.

Preferably, the self-luminous unit includes a plurality of first light emitting parts extending along a first direction and a plurality of second light emitting parts extending along a second direction, the first light emitting parts and the second light emitting parts intersect each other To form a mesh structure, the mesh structure forms a mesh projection on the substrate, the photodetection units correspond to the grid of the mesh projection, and each photodetection unit faces the substrate The orthographic projection of is in the corresponding grid.

Preferably, the self-luminous unit is located on a side of the substrate facing the light-emitting direction, and the photodetection unit is located on the other side of the substrate facing away from the light-emitting direction.

Preferably, before the step of forming the photodetection unit on the substrate, it further includes: forming a plurality of thin film transistors and alignment marks, the thin film transistors correspond to the photodetection units one by one, and the alignment marks located at the edge of the array substrate;

forming transparent first electrodes corresponding to the thin film transistors one by one, and a part of the first electrode is disposed on the drains of the corresponding thin film transistors;

After the step of forming the photoelectric detection unit, it also includes:

forming a second electrode on the surface of the photodetection unit away from the substrate;

The step of forming the self-luminous unit on the substrate is performed after the step of forming the photodetection unit, and during the process of forming the self-luminous unit, the alignment mark is used to perform alignment, so that the photodetection The boundary of the orthographic projection of the unit toward the substrate coincides with the inner boundary of the grid corresponding to the photodetection unit.

Correspondingly, the present invention also provides a fingerprint identification device, including the above-mentioned array substrate provided by the present invention.

In the present invention, since the orthographic projection of each photodetection unit on the substrate is surrounded by the orthographic projection of the self-luminous unit on the substrate, when a finger is placed on the array substrate, the light emitted by the self-luminous unit After the light is reflected by the finger, it will directly shoot to the photoelectric detection unit without being blocked. Moreover, the light received by each photodetection unit is emitted by the surrounding self-luminous units. Compared with the structure in the prior art in which a self-luminous unit is arranged above each photodetection device, the photodetection unit in the present invention can More light is received, so more effective signals are received, thereby improving the signal-to-noise ratio of photoelectric conversion. In addition, when a certain detection point of the finger corresponds to the area between two self-illuminating units, the light reflected by the detection point will be received by the photodetection unit below the area, but will not be received by other photodetection units. Therefore, it is convenient to carry out image recognition on the detection point in the future.

Description of drawings

The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the description, together with the following specific embodiments, are used to explain the present invention, but do not constitute a limitation to the present invention. In the attached image:

FIG. 1 is a top view of an array substrate provided in an embodiment of the present invention;

2 is a schematic diagram of the positional relationship between the self-luminous unit and the photoelectric detection unit in the embodiment of the present invention;

Fig. 3 is a schematic diagram of a specific arrangement structure of a photoelectric detection unit on a substrate;

FIG. 4 is a flow chart of a manufacturing method of an array substrate provided in an embodiment of the present invention.

Wherein, reference sign is:

1. Substrate; 2. Self-luminous unit; 21. First light emitting part; 22. Second light emitting part; 3. Photoelectric detection unit; 4. Insulating layer; 5. Thin film transistor; 51. Gate; 52. Source 53. Drain electrode; 54. Active layer; 6. First electrode; 7. Second electrode; 8. Passivation layer.

Detailed ways

Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.

As one aspect of the present invention, an array substrate is provided. As shown in FIG. 1 to FIG. The orthographic projections of each photodetection unit 3 on the substrate 1 are surrounded by the orthographic projections of the self-luminous unit 2 on the substrate 1 .

Wherein, the photodetection unit 3 may specifically be a PIN photodiode, which includes an N-type amorphous silicon film layer, an intrinsic amorphous silicon film layer and a P-type amorphous silicon film layer stacked in sequence. The photodetection unit 3 generates hole-electron pairs under the irradiation of visible light, the electrons move toward the N-type amorphous silicon film layer, and the holes move toward the P-type amorphous silicon film layer.

In this application, the self-luminous unit 2 may be an electroluminescent device such as an organic light-emitting unit OLED, a quantum dot light-emitting unit QLED, or a micro-array light-emitting unit Micro LED. In the following embodiments, an organic light-emitting unit OLED is taken as an example to illustrate the realization and principle of the technical solution of the present application.

The organic light-emitting unit OLED can specifically adopt a top-emission structure, which includes sequentially stacking multiple light-emitting film layers, such as reflective electrodes, electron injection layers, electron transport layers, light-emitting layers, hole transport layers, hole injection layers, transparent electrodes, etc. ; In order not to affect the light reflection of the self-emitting unit 2, the photodetection unit 3 can be arranged in the layer below the self-emitting unit 2. Alternatively, the self-luminous unit 2 is a bottom emission structure, and the photodetection unit 3 is disposed in a layer above the self-luminous unit 2 . During fingerprint recognition, the light emitted by the organic light-emitting unit OLED is reflected by the finger to the photoelectric detection unit 3, and the photoelectric detection unit 3 receives the light signal and converts it into an electrical signal. Since the light reflected by the valley and ridge of the fingerprint is different, Therefore, the converted electrical signals are also different, so that the detection circuit obtains fingerprint images according to different electrical signals.

In the present invention, since the orthographic projection of each photodetection unit 3 on the substrate 1 is surrounded by the orthographic projection of the self-luminous unit 2 on the substrate, when the finger is placed on the array substrate, the self-luminous After the light emitted by the unit 2 is reflected by the finger, it will directly go to the photoelectric detection unit 3 without being blocked. And, the light received by each photoelectric detection unit 3 is emitted by the surrounding self-luminous unit 2. Compared with the structure in which the self-luminous unit 2 is arranged above each photoelectric detection device in the prior art, the photoelectric in the present invention The detection unit 3 can receive more light, thereby receiving more effective signals, thereby improving the signal-to-noise ratio of the photoelectric conversion. In addition, for the structure in the prior art (that is, a photodetection unit is arranged under each self-luminous unit), when a certain detection point of the finger corresponds to the area between two self-luminous units, the two self-luminous units The photoelectric detection unit below the self-luminous unit may receive the light reflected by the detection point, thereby causing interference, which is not conducive to image recognition of the detection point; and in the present invention, when a certain detection point of the finger is located at A in Fig. In the region, the light reflected by the detection point will be received by the photodetection unit 3 below the A region, but will not be received by other photodetection units 3, thereby preventing different detection signals of different photodetection units 3 from being detected in subsequent image recognition. Interference occurs.

The present invention does not specifically limit the specific shape and arrangement of the self-luminous unit 2, for example, a plurality of spaced self-luminous units 2 can be set, and the orthographic projection of the photodetection unit 3 on the substrate 1 is surrounded by a plurality of self-luminous units. Orthographic projection of the unit 2; it can also be: the self-illuminating unit 2 is an integral structure. Preferably, the present invention adopts an integral structure of the self-luminous unit 2. Specifically, as shown in FIG. The second light emitting part 22 extending in the direction, the first light emitting part 21 and the second light emitting part 22 cross each other to form a network structure, and the network structure forms a network projection on the substrate 1, and the network projection includes a plurality of In the grid, the photodetection unit 3 corresponds to the grid of the mesh projection, and the orthographic projection of the photodetection unit 3 toward the substrate 1 is located in the corresponding grid. This structure makes the area of the self-luminous unit 2 around each photodetection unit 3 larger, so that the photodetection unit 3 can receive more light and further improve the signal-to-noise ratio.

Based on the technical concept of the present invention, those skilled in the art can easily understand that, in addition to the above-mentioned arrangement of self-luminous units, other arrangements, such as triangles, prisms, etc., are still covered by the protection scope of the present invention.

Further, the boundary of the orthographic projection of the photodetection unit 3 toward the substrate 1 coincides with the inner boundary of the grid corresponding to the photodetection unit 3, so that when the reflected light is not blocked and shoots to the photodetection unit 3 , maximize the light receiving area, further increase the amount of light received, and improve the signal-to-noise ratio. Wherein, the inner boundary of the grid is: among the two first light emitting parts 21 and two second light emitting parts 22 surrounding the grid, the opposite edges of the two first light emitting parts 21 and the two second light emitting parts 22 opposite edge. For example, in FIG. 1 , the four boundaries of the projection of the photodetection unit 3 in the upper left corner on the substrate are respectively connected to the lower edge of the uppermost first light-emitting portion 21 and the upper edge of the second first light-emitting portion 21 from top to bottom. The projections of the edge, the right edge of the leftmost second light emitting portion 22 , and the left edge of the second second light emitting portion 22 from left to right on the substrate 1 overlap.

It should be understood that, the array substrate further includes an insulating layer 4, on which a receiving groove is formed, and the self-luminous unit 2 is disposed in the receiving groove. Taking the self-luminous unit 2 as an example of a top-emission organic light-emitting unit, a transparent electrode is provided above the organic light-emitting unit, and a reflective electrode (not shown) is provided below. The fingerprint recognition device including the array substrate can only be used for fingerprint recognition. At this time, the transparent electrode and the reflective electrode can be a whole-layer structure, and the array substrate also includes high and low level signal lines, so as to provide the reflective electrode and the reflective electrode respectively. The transparent electrode provides a signal, causing the organic light emitting unit to emit light. The fingerprint identification device can also perform fingerprint identification and screen display at the same time. At this time, the transparent electrode can be set as a whole-layer structure, the number of reflective electrodes can be set to multiple, and the multiple reflective electrodes are arranged in multiple rows and columns. There are multiple scanning lines, multiple data lines and switch tubes corresponding to the reflective electrodes on the substrate. The display is realized by scanning the scan lines, providing data signals by the data lines and turning on the switch tubes. The specific display process is the same as that of the existing The display principle of the organic light-emitting display panel in the technology is the same, and will not be described in detail here.

Further, as shown in FIG. 2 , the self-luminous unit 2 and the photodetection unit 3 are arranged on both sides of the substrate 1 respectively, wherein the self-luminous unit 2 is located on the side of the substrate 1 facing the light-emitting direction, and the photodetection unit 3 is located on the side of the substrate 1 facing the light-emitting direction. The side of the substrate 1 facing away from the light emitting direction. In FIG. 2 , the self-emitting unit 2 is a top-emitting structure. The side of the substrate 1 facing the light-emitting direction is the upper side of the substrate 1 , and the side facing away from the light-emitting direction is the lower side of the substrate 1 . In this way, when the organic light-emitting unit is used as the self-luminous unit 2, the organic light-emitting unit can be arranged on a relatively flat surface without the need to separately prepare a planarization layer, which reduces the overall thickness of the product and reduces the cost.

As shown in FIG. 3 , a thin film transistor 5 corresponding to the photodetection unit 3 and a first electrode 6 connected between the thin film transistor 5 and the photodetection unit 3 are also provided on the substrate 1 , and the thin film transistor 5 includes The gate 51 , the active layer 54 , the source 52 and the drain 53 , and a part of the first electrode 6 are provided on the drain 53 of the thin film transistor 5 so as to be electrically connected to the drain 53 . The photodetection unit 3 is located on the side of the first electrode 6 facing away from the substrate 1 , and the surface of the photodetection unit 3 facing away from the substrate 1 is further provided with a second electrode 7 . The second electrode on each photodetection unit 3 can be connected to the detection circuit through a detection line. When performing photoelectric detection, the thin film transistors can be turned on row by row, so that when the thin film transistors in each row are turned on, the photodetection units 3 in the corresponding row perform Photoelectric conversion, and the converted electrical signal is transmitted to the detection circuit through the second electrode and the detection line. A passivation layer 8 may also be provided on the substrate 1, and a via hole is formed on the passivation layer 8. The via hole corresponds to the part of the first electrode 6 that is not in contact with the drain electrode 53, and the photodetection unit 3 is arranged in the via hole. middle.

It should be noted that the setting of the first electrode 6 and the second electrode 7 should not affect the light received by the photodetection unit 3. When the photodetection unit 3 and the self-luminous unit 2 are arranged on both sides of the substrate 1, the first electrode 6 is a transparent electrode (for example, silver tin oxide ITO electrode), and the second electrode 7 can be a transparent electrode or a non-transparent electrode; when the photodetection unit 3 and the self-luminous unit 2 are arranged on the same side of the substrate 1, That is, when the photodetection unit 3 is arranged above the layer where the thin film transistor 5 is located, and the self-luminous unit 2 is arranged above the layer where the photodetection unit 3 is located, the second electrode 7 is a transparent electrode, and the first electrode 6 can be a transparent electrode, or Can be a non-transparent electrode.

As another aspect of the present invention, a method for manufacturing an array substrate is provided, as shown in FIG. 1 to FIG. 3 , the method includes:

A substrate 1 is provided.

A plurality of photodetection units 3 are formed on a substrate 1 .

The self-luminous unit 2 is formed on the substrate 1 , wherein the orthographic projection of each photodetection unit 3 on the substrate 1 is surrounded by the orthographic projection of the self-luminous unit 2 on the substrate 1 .

In the present invention, since the orthographic projection of each photodetection unit 3 on the substrate 1 is surrounded by the orthographic projection of the self-illuminating unit 2 on the substrate 1, when the finger is placed on the array substrate , after the light emitted from the light emitting unit 2 is reflected by the finger, it will directly shoot to the photoelectric detection unit 3 without being blocked. Moreover, the light received by each photodetection unit 3 is emitted by the surrounding self-luminous units 2, therefore, each photodetection unit 3 can receive more light, thereby receiving more effective signals, thereby improving Signal-to-noise ratio of photoelectric conversion. In addition, when a certain detection point of the finger corresponds to the area A between two self-illuminating units 2, the light reflected by the detection point will be received by the photodetection unit 3 below the area A, and will not be received by other photodetection units. 3 received, so as to facilitate subsequent image recognition of the detection point.

The manufacturing method of the array substrate provided by the present invention will be specifically introduced below with reference to FIG. 1 and FIG. 4 . Described preparation method comprises:

S1. Providing a substrate 1 .

S2, forming a plurality of thin film transistors 5 and alignment marks (not shown), the alignment marks are located at the edge of the array substrate, that is, around the area where the photodetection unit 3 and the self-luminous unit 2 are located. The thin film transistor 5 includes a gate 51, an active layer 54, a source 52 and a drain 53. The alignment mark is made of metal, and can be formed synchronously with the gate 51 of the thin film transistor 5, and can also be formed with the source 52. , The drain 53 is formed synchronously.

S3, forming a transparent first electrode 6 corresponding to the thin film transistor 5 one-to-one, a part of the first electrode is arranged on the drain electrode 53 of the corresponding thin film transistor 5, and the material of the first electrode 6 can specifically adopt indium tin oxide (ITO ).

S4. Form a plurality of photodetection units 3 on the side of the substrate 1 facing away from the light-emitting direction (ie, the lower side of the substrate 1 in FIG. 2 ), and the thin film transistors 5 correspond to the photodetection units 3 one by one.

S5 , forming the second electrode 7 on the surface of the photodetection unit 3 facing away from the substrate 1 .

S6, forming a self-luminous unit 2 on the other side of the substrate 1 facing the light emitting direction (ie, the upper side of the substrate 1 in FIG. 2 ). Specifically, the self-luminous unit 2 includes a plurality of first light emitting parts 21 extending along a plurality of first directions and a plurality of second light emitting parts 22 extending along a second direction, and the first light emitting parts 21 and the second light emitting parts 22 are mutually Intersect to form a network structure, the network structure forms a network projection on the substrate 1, the photodetection units 3 correspond to the grid of the network projection, and each photodetection unit 3 faces the substrate 1 The orthographic projection is in the corresponding grid.

Moreover, in the process of step S6, the alignment mark is used to perform alignment, so that the boundary of the orthographic projection of the photodetection unit 3 toward the substrate 1 is the inner boundary of the grid corresponding to the photodetection unit 3 coincident (as shown in Figure 1 and Figure 2). Wherein, when forming the grid-shaped self-luminous unit 2, an insulating layer 4 can be formed first, and then a receiving groove is formed on the insulating layer 4 by a photolithographic patterning process, and the orthographic projection of the receiving groove on the substrate 1 is a mesh Afterwards, a multi-layer light-emitting film layer is formed by vapor deposition in the containing tank, thereby forming an organic light-emitting unit OLED as the self-light-emitting unit 2 . The alignment by using the alignment marks means that the alignment marks are aligned with the pre-formed reference marks on the mask plate, so that when the accommodation grooves are formed, the orthographic projection of the accommodation grooves toward the substrate 1 is in the shape of a mesh projection, and the inner boundary of the mesh projection is aligned with the boundary of the photodetection unit 3 .

As another aspect of the present invention, a fingerprint identification device is provided, including the above-mentioned array substrate provided by the present invention. Since the amount of light received by the photoelectric conversion unit in the array substrate increases, thereby increasing the signal-to-noise ratio, the fingerprint recognition device using the array substrate has a more accurate recognition effect.

It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (7)

1. An array substrate comprising a substrate and a self-luminous unit and a plurality of photodetecting units disposed on the substrate, characterized in that an orthographic projection of each of the photodetecting units on the substrate is surrounded by an orthographic projection of the self-luminous unit on the substrate;

the self-luminous unit comprises a plurality of first luminous parts extending along a plurality of first directions and a plurality of second luminous parts extending along a second direction, the first luminous parts and the second luminous parts are mutually crossed to form a net-shaped structure, the net-shaped structure forms a net-shaped projection on the substrate, the photoelectric detection units are in one-to-one correspondence with grids of the net-shaped projection, and the orthographic projection of each photoelectric detection unit towards the substrate is positioned in the corresponding grid; the boundary of the orthographic projection of the photoelectric detection unit towards the substrate is superposed with the inner boundary of the grid corresponding to the photoelectric detection unit; the photoelectric detection device comprises a substrate, and is characterized in that a passivation layer, thin film transistors in one-to-one correspondence with photoelectric detection units and first electrodes connected between the thin film transistors and the photoelectric detection units are further arranged on the substrate, a part of the first electrodes is arranged on drain electrodes of the thin film transistors, through holes are formed in the passivation layer, the through holes correspond to the parts of the first electrodes, which are not in contact with the drain electrodes, and the photoelectric detection units are arranged in the through holes.

2. The array substrate of claim 1, wherein the self-light emitting unit is located on one side of the substrate facing the light emitting direction, and the photo-detection unit is located on the other side of the substrate facing away from the light emitting direction.

3. The array substrate according to claim 1, wherein the photodetecting unit is located on a side of the first electrode facing away from the substrate, and a second electrode is further disposed on a surface of the photodetecting unit facing away from the substrate.

4. A manufacturing method of an array substrate is characterized by comprising the following steps:

providing a substrate;

forming a plurality of photodetecting units on the substrate;

forming a self-luminous unit on the substrate, wherein the orthographic projection of each photoelectric detection unit on the substrate is surrounded by the orthographic projection of the self-luminous unit on the substrate;

the self-luminous unit comprises a plurality of first luminous parts extending along a first direction and a plurality of second luminous parts extending along a second direction, the first luminous parts and the second luminous parts are mutually crossed to form a net-shaped structure, the net-shaped structure forms a net-shaped projection on the substrate, the photoelectric detection units are in one-to-one correspondence with grids of the net-shaped projection, and the orthographic projection of each photoelectric detection unit towards the substrate is positioned in the corresponding grid; the boundary of the orthographic projection of the photoelectric detection unit towards the substrate is superposed with the inner boundary of the grid corresponding to the photoelectric detection unit;

the manufacturing method further comprises the following steps: a passivation layer, thin film transistors corresponding to the photoelectric detection units one by one and first electrodes connected between the thin film transistors and the photoelectric detection units are formed on the substrate, a part of the first electrodes is arranged on drain electrodes of the thin film transistors, via holes are formed on the passivation layer, the via holes correspond to the parts of the first electrodes which are not in contact with the drain electrodes, and the photoelectric detection units are arranged in the via holes.

5. The manufacturing method of claim 4, wherein the self-light-emitting unit is located on one side of the substrate facing the light-emitting direction, and the photo-detection unit is located on the other side of the substrate facing away from the light-emitting direction.

6. The method of claim 5, further comprising, before the step of forming the photodetecting unit on the substrate: forming a plurality of thin film transistors and alignment marks, wherein the thin film transistors correspond to the photoelectric detection units one by one, and the alignment marks are positioned on the edge of the array substrate;

forming transparent first electrodes corresponding to the thin film transistors one by one, wherein one part of each first electrode is arranged on the drain electrode of the corresponding thin film transistor;

the step of forming the photodetecting unit further comprises:

forming a second electrode on the surface of the photoelectric detection unit, which is far away from the substrate;

the step of forming the self-light emitting unit on the substrate is performed after the step of forming the photo-detection unit, and in the process of forming the self-light emitting unit, alignment is performed using the alignment marks so that a boundary of an orthographic projection of the photo-detection unit toward the substrate coincides with an inner boundary of a mesh to which the photo-detection unit corresponds.

7. A fingerprint identification device comprising the array substrate of any one of claims 1 to 3.

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