CN107085007B - Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter - Google Patents
Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter Download PDFInfo
- Publication number
- CN107085007B CN107085007B CN201710139104.4A CN201710139104A CN107085007B CN 107085007 B CN107085007 B CN 107085007B CN 201710139104 A CN201710139104 A CN 201710139104A CN 107085007 B CN107085007 B CN 107085007B
- Authority
- CN
- China
- Prior art keywords
- sample
- induction
- line
- resistance
- sensing line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
本发明提出了检测一维微纳米材料热电性能参数的设备及方法。该检测设备包括：加热线，其两端分别与第一热沉、第二热沉相连；第一感应线，平行设置在加热线的下方，且两端分别与第三热沉、第四热沉相连；第二感应线，平行设置在第一感应线的下方，且两端分别与第五热沉、第六热沉相连；加热电源，与加热线相连并用于对加热线进行加热；第一电参数检测组件，与第一感应线相连且用于对第一感应线的电参数进行检测；以及第二电参数检测组件，与第二感应线相连且用于对第二感应线的电参数进行检测。本发明所提出的检测设备，可用于检测一维微纳米材料的热电性能参数，将接触热电阻引起的误差大大减小，提高测量的精度。
The invention provides a device and a method for detecting thermoelectric performance parameters of one-dimensional micro-nano materials. The detection device includes: a heating wire, two ends of which are respectively connected to the first heat sink and the second heat sink; The second induction wire is arranged in parallel below the first induction wire, and the two ends are respectively connected with the fifth heat sink and the sixth heat sink; the heating power source is connected with the heating wire and used for heating the heating wire; An electrical parameter detection component connected to the first sensing line and used for detecting the electrical parameters of the first sensing line; and a second electrical parameter detection component connected to the second sensing line and used for detecting the electrical parameters of the second sensing line parameters are checked. The detection device proposed by the invention can be used to detect the thermoelectric performance parameters of the one-dimensional micro-nano material, greatly reduces the error caused by the contact thermal resistance, and improves the measurement accuracy.
Description
Technical Field
The invention relates to the technical field of micro-nano material testing, in particular to equipment and a method for detecting thermoelectric performance parameters of a one-dimensional micro-nano material.
Background
In recent years, with the increasing severity of environmental pollution and energy crisis, thermoelectric materials attract extensive attention due to unique properties, and have wide application prospects in the fields of aerospace, microelectronics, optoelectronic devices, energy conservation, environmental protection and the like, so that the synthesis, performance test and theoretical research of novel micro-nano thermoelectric materials are rapidly developed. However, due to the special characteristics of the thermoelectric material such as size and anisotropy, the traditional method for testing the thermoelectric properties of the bulk material cannot be used for measuring the thermoelectric properties of the micro-nano-scale material.
Therefore, the measurement and characterization method of the properties of the micro-nano thermoelectric material still needs to be improved.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art.
The present invention has been completed based on the following findings of the inventors:
the inventor finds that the thermoelectric figure of merit Z is an important parameter for measuring the comprehensive performance of the thermoelectric material in the research process, and the parameter is defined as: Z-sigma-S2And/λ, where S is the Seebeck coefficient, and σ and λ are the electrical and thermal conductivities of the material, respectively. As can be seen from the excellent coefficient expression, the larger the Seebeck coefficient and the electrical conductivity are, the smaller the thermal conductivity is, and the better the thermoelectric property of the material is. Wherein the seebeck coefficient is specifically expressed as: s ═ VS/△ T, wherein VS△ T is the temperature difference between two ends of the thermoelectric material, and the existing methods for measuring the thermoelectric performance in the micro-nano scale have the defect that the influence of the contact thermal resistance on the measurement result is difficult to eliminate, thereby causing additional measurement errors.
The inventor of the invention finds that the influence of the contact thermal resistance on the measurement result can be effectively reduced by a method for comprehensively measuring the thermal conductivity, the electric conductivity and the Seebeck coefficient of the one-dimensional micro-nano material through intensive research. The method adopts three test wires as a heating wire and an induction wire respectively, a sample to be tested is lapped on the three test wires, a high-temperature end is formed on the test sample by electrifying and heating the heating wire, and the other two test wires are used as the induction wires to obtain the steady-state temperature rise of the sample to be tested at different lapping points respectively. Furthermore, the direct current Seebeck voltage between the induction line and two lap joints of the sample to be measured can be measured, so that the thermal conductivity and the Seebeck coefficient of the sample to be measured can be obtained; and the conductivity of the sample to be detected can be obtained by utilizing a four-line structure (in a shape of Chinese character 'wang') formed by lapping, so that the thermoelectric property of the material can be comprehensively represented.
In view of the above, an object of the present invention is to provide a means for detecting thermoelectric performance parameters of a one-dimensional micro-nano material, which effectively reduces the influence of contact thermal resistance, has a simple device, and is easy to measure or test at low cost.
In a first aspect of the invention, the invention provides equipment for detecting thermoelectric performance parameters of a one-dimensional micro-nano material.
According to an embodiment of the invention, the apparatus comprises:
the first end of the heating wire is connected with the first heat sink, and the second end of the heating wire is connected with the second heat sink;
the first induction line is flush with two ends of the heating line, is arranged below the heating line in parallel, is connected with the third heat sink at the first end and is connected with the fourth heat sink at the second end;
the second induction line is flush with two ends of the first induction line, is arranged below the first induction line in parallel, and is connected with the fifth heat sink at the first end and the sixth heat sink at the second end;
the heating power supply is connected with the heating wire and used for heating the heating wire;
the first electrical parameter detection assembly is connected with the first induction line and is used for detecting the electrical parameters of the first induction line; and
and the second electrical parameter detection assembly is connected with the second induction line and is used for detecting the electrical parameters of the second induction line.
The invention has the advantages that the detection equipment can be effectively used for detecting the thermoelectric performance parameters of the one-dimensional micro-nano material, and the heating end and the testing end can be separated, so that the error caused by contact with a thermal resistor is greatly reduced, and the measurement precision is improved; on the basis of carrying out primary sample lapping, various thermoelectric performance parameters of the sample to be measured can be obtained in sequence by changing the measuring circuit, so that the thermoelectric performance of the sample to be measured can be comprehensively characterized, and the method has high integration level.
In addition, the detection device according to the above embodiment of the present invention may further have the following additional technical features:
according to an embodiment of the invention, the apparatus further comprises: a first lap joint point disposed on the heating line; the second lap joint point is arranged on the first induction line; and a third lap joint point arranged on the second induction line.
According to an embodiment of the invention, the apparatus further comprises: a third electrical parameter detection component for detecting an electrical parameter between the second lap point and the third lap point.
According to an embodiment of the present invention, at least one of the heating wire, the first induction wire, and the second induction wire is formed of platinum.
According to an embodiment of the invention, the first electrical parameter detection assembly comprises: a first power supply; the first resistor, the first power supply and the first induction line are connected in series to form an electric loop; a first voltmeter connected in parallel with the first resistor; and the second voltmeter is connected with the first induction line in parallel.
According to an embodiment of the invention, the second electrical parameter detection assembly comprises: a second power supply; the second resistor, the second power supply and the second induction line are connected in series to form an electric loop; a third voltmeter connected in parallel with the second resistor; and the fourth voltmeter is connected with the second induction line in parallel.
According to an embodiment of the invention, the third electrical parameter detection assembly comprises: a third power supply; the third power supply and the lower section of the sample to be detected between the second lap joint point and the third lap joint point form an electric loop; a fifth voltmeter connected in parallel with the third resistor; and the sixth voltmeter is connected with the lower section of the sample to be detected in parallel.
According to an embodiment of the invention, the apparatus further comprises: and the calculating component is respectively connected with the first electrical parameter detection component, the second electrical parameter detection component and the third electrical parameter detection component and is used for determining the thermoelectric performance parameters of the sample to be detected.
According to the embodiment of the invention, the thermoelectric performance parameter of the sample to be tested comprises at least one of thermal conductivity, Seebeck coefficient and electric conductivity;
wherein the thermal conductivity is determined based on the following formula:
λ＝λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2)，
wherein λ is3Is the thermal conductivity of the second induction line, A3Is the cross-sectional area of the second induction line,/3Is the length of the second induction line,/42Is the length of the lower section of the sample to be measured, A4Is the sample to be measuredCross-sectional area of the article, /)31Is the length between the first end of the second induction line and the third overlap point,/32Is the length between the second end of the second induction line and the third lap point, △ R2Is a resistance change, R, of the first induction line after the heating power supply is started03Is the resistance of the second induction line at a temperature of 0 ℃, βT3Is the temperature coefficient of resistance of the second induction line at the ambient temperature T, △ R3Is a resistance change, R, of the second induction line after the heating power supply is turned on02Is the resistance of the first induction line at a temperature of 0 ℃, βT2Is the temperature coefficient of resistance of the first induction line at ambient temperature T;
the seebeck coefficient is determined based on the following formula:
S＝VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)+Sswherein VS is the DC Seebeck potential between the lower section of the sample to be measured, the second lap point and the second end of the first induction line and the third lap point and the second end of the second induction line, R02Is the resistance of the first induction line at a temperature of 0 ℃, βT2Is the temperature coefficient of resistance, R, of the first induction line at ambient temperature T03Is the resistance of the second induction line at a temperature of 0 ℃, βT3Is the temperature coefficient of resistance of the second induction line at the ambient temperature T, △ R2Is a change in resistance of the first induction line after the heating power source is turned on, △ R3Is a resistance change of the second induction line after the heating power supply is started, SsIs the seebeck coefficient of the induction line material at ambient temperature T;
the conductivity is determined based on the following formula: sigma ═ l42/R42A4Wherein l is42Is the length of the lower section of the sample to be measured, R42Is the resistance of the lower section of the sample to be measured, A4Is the cross-sectional area of the sample to be measured.
In a second aspect of the invention, the invention provides a method for detecting thermoelectric performance parameters of the one-dimensional micro-nano material by using the equipment.
According to an embodiment of the invention, the method comprises:
(1) lapping a sample to be tested on the first lapping point, the second lapping point and the third lapping point;
(2) under the vacuum condition, starting the heating power supply to heat the heating wire;
(3) acquiring an electrical parameter by using the first electrical parameter detection assembly, the second electrical parameter detection assembly and the third electrical parameter detection assembly;
(4) determining the thermoelectric performance parameters of the one-dimensional micro-nano material based on the electrical parameters obtained in the step (3),
wherein the thermoelectric performance parameter of the sample to be tested comprises at least one of thermal conductivity, Seebeck coefficient and electric conductivity;
the thermal conductivity is determined based on the following formula:
λ＝λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2)，
wherein λ is3Is the thermal conductivity of the second induction line, A3Is the cross-sectional area of the second induction line,/3Is the length of the second induction line,/42Is the length of the lower section of the sample to be measured, A4Is the cross-sectional area of the sample to be measured,/31Is the length between the first end of the second induction line and the third overlap point,/32The second end of the second induction line is connected with the third lapLength between contacts, △ R2Is a resistance change, R, of the first induction line after the heating power supply is started03Is the resistance of the second induction line at a temperature of 0 ℃, βT3Is the temperature coefficient of resistance of the second induction line at the ambient temperature T, △ R3Is a resistance change, R, of the second induction line after the heating power supply is turned on02Is the resistance of the first induction line at a temperature of 0 ℃, βT2Is the temperature coefficient of resistance of the first induction line at ambient temperature T;
the seebeck coefficient is determined based on the following formula: s ═ VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)+SsWherein V isSIs a direct current seebeck potential, R, between the lower section of the sample to be measured, the second lap point and the second end of the first induction line, and the third lap point and the second end of the second induction line02Is the resistance of the first induction line at a temperature of 0 ℃, βT2Is the temperature coefficient of resistance, R, of the first induction line at ambient temperature T03Is the resistance of the second induction line at a temperature of 0 ℃, βT3Is the temperature coefficient of resistance of the second induction line at the ambient temperature T, △ R2Is a change in resistance of the first induction line after the heating power source is turned on, △ R3Is a resistance change of the second induction line after the heating power supply is started, SsIs the seebeck coefficient of the induction line material at ambient temperature T;
the conductivity is determined based on the following formula: sigma ═ l42/R42A4Wherein l is42Is the length of the lower section of the sample to be measured, R42Is the resistance of the lower section of the sample to be measured, A4Is the cross-sectional area of the sample to be measured.
The inventors surprisingly found that the detection method provided by the embodiment of the invention is suitable for detecting the thermoelectric performance parameters of the one-dimensional micro-nano material, and the influence of contact thermal resistance on the test result can be effectively eliminated through the heating end and the test end which are respectively arranged, so that the precision of the detection result of the thermoelectric performance parameters of the one-dimensional micro-nano material is remarkably improved; on the basis of carrying out primary sample lapping, the thermal conductivity, the electric conductivity and the Seebeck coefficient of the sample to be measured can be sequentially obtained by changing the measuring circuit, so that the thermoelectric property of the sample to be measured can be comprehensively characterized, and the integrated level is high; the detection method has the advantages of high measurement precision, easiness in implementation, low test cost and the like. Those skilled in the art can understand that the features and advantages described above for the apparatus for detecting thermoelectric performance parameters of a one-dimensional micro-nano material are still applicable to the method for detecting thermoelectric performance parameters of a one-dimensional micro-nano material, and are not described herein again.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic structural diagram of a detection apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the use of a detection apparatus according to one embodiment of the present invention;
FIG. 3 is a schematic diagram of a circuit for testing the thermal conductivity of a sample under test according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of a circuit for testing the Seebeck coefficient of a sample to be tested according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a circuit for measuring the conductivity of a sample under test according to one embodiment of the present invention;
FIG. 6 is a schematic flow chart of a detection method according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart of obtaining an electrical parameter in a detection method according to an embodiment of the present invention;
fig. 8 is a graph showing the results of the thermal conductivity test of the samples to be tested of example 1 of the present invention;
FIG. 9 is a Seebeck coefficient test result chart of a sample to be tested of example 1 of the present invention;
fig. 10 is a graph showing the results of the conductivity test of the sample to be tested according to example 1 of the present invention.
Reference numerals
11 first section of heating wire
12 second section of heating wire
21 first segment of first induction line
22 second section of the first induction line
31 first section of the second induction line
32 second segment of the second induction line
41 upper section of sample to be measured
42 lower section of sample to be measured
51 first heat sink
52 second heatsink
53 third Heat sink
54 fourth Heat sink
55 fifth Heat sink
56 sixth Heat sink
1 first overlap point
2 second overlap point
3 third overlap Point
4 third power supply
5 heating power supply
6 first power supply
7 second power supply
8 first resistance
9 second resistance
10 first voltmeter
11 second voltmeter
12 fourth voltmeter
13 third voltmeter
14 third resistance
15 the fifth voltmeter
16 sixth voltmeter
Detailed Description
The following examples of the present invention are described in detail, and it will be understood by those skilled in the art that the following examples are intended to illustrate the present invention, but should not be construed as limiting the present invention. Unless otherwise indicated, specific techniques or conditions are not explicitly described in the following examples, and those skilled in the art may follow techniques or conditions commonly employed in the art or in accordance with the product specifications. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available on the market.
In one aspect of the invention, the invention provides equipment for detecting thermoelectric performance parameters of a one-dimensional micro-nano material. The detection apparatus of the present invention will be described in detail with reference to FIGS. 1 to 5. It should be noted that the "sample to be measured" herein is a one-dimensional micro-nano material sample.
According to an embodiment of the present invention, referring to fig. 1, the detection apparatus includes: the heating wire, first induction line and second induction line that parallel arrangement. Wherein a first end of the heater wire is connected to the first heat sink 51 and a second end of the heater wire is connected to the second heat sink 52, such that the heater wire comprises a first section 11 connected to the first heat sink 51, a second section 12 connected to the second heat sink 52; the first induction line is flush with two ends of the heating line, the first induction line is arranged below the heating line in parallel, a first end of the first induction line is connected with the third heat sink 53, and a second end of the first induction line is connected with the fourth heat sink 54, so that the first induction line comprises a first section 21 and a second section 22; and the second sensing line is flush with both ends of the first sensing line and is disposed in parallel below the first sensing line, and a first end of the second sensing line is connected to the fifth heat sink 55 and a second end of the second sensing line is connected to the sixth heat sink 56, so that the second sensing line includes the first segment 31 and the second segment 32.
The inventors have unexpectedly found that, by using three test lines as the heating line and the induction line, respectively, and referring to fig. 2, a sample to be tested can be vertically lapped on the three test lines, and a first lap joint point 1, a second lap joint point 2, and a third lap joint point 3 are sequentially formed from top to bottom. Wherein, the first overlap point 1 is arranged on the heating wire, the second overlap point 2 is arranged on the first induction wire, and the third overlap point 3 is arranged on the second induction wire. Thus, a first overlap joint point 1 at a high temperature end can be formed by heating the sample to be detected through the heating wire, the other two testing wires are used as induction wires to obtain the steady temperature rise at the overlap joint points 2 and 3 of the sample to be detected, and meanwhile, the direct current Seebeck voltage of the lower section 42 between the induction wires and the overlap joint points 2 and 3 of the sample to be detected can be measured, so that the heat conductivity and the Seebeck coefficient of the sample to be detected can be further obtained; and then the conductivity of the sample to be measured can be obtained by utilizing a four-wire method, so that the thermoelectric property of the material can be comprehensively represented.
According to the embodiment of the present invention, the specific material of the heating wire is not particularly limited as long as the material of the heating wire can effectively conduct current and heat, and those skilled in the art can select the material according to the actual thermoelectric property of the sample to be measured. In some embodiments of the present invention, the heating wire may be formed of platinum, so that the heating wire using platinum material has higher conductivity and long service life, and has better heating effect on the sample to be measured. According to the embodiment of the present invention, the specific size of the heating wire, such as the diameter and the length, is not particularly limited, as long as the heating wire with the size can effectively heat the sample to be measured, and a person skilled in the art can select the heating wire according to the specific size of the sample to be measured, and will not be described herein again.
According to an embodiment of the present invention, a specific material of the first sensing wire is not particularly limited as long as the material of the first sensing wire can be effectively used for measuring the thermoelectric property of the sample to be measured, and a person skilled in the art can select the material according to the actual thermoelectric property of the sample to be measured. In some embodiments of the present invention, the first sensing wire may be formed of platinum, such that the first sensing wire using platinum material has higher conductivity and long service life, and has less influence on the measurement result of the conductivity of the sample to be measured. According to the embodiment of the present invention, the specific size of the first sensing line, such as the diameter and the length, is not particularly limited, as long as the first sensing line with the size can be effectively used for measuring the thermoelectric performance of the sample to be measured, and a person skilled in the art can select the first sensing line according to the actual specific size of the sample to be measured, which is not described herein again.
According to the embodiment of the present invention, the specific material of the second sensing wire is not particularly limited as long as the material of the second sensing wire can be effectively used for measuring the thermoelectric property of the sample to be measured, and those skilled in the art can select the material according to the actual thermoelectric property of the sample to be measured. In some embodiments of the present invention, the second sensing wire may be formed of platinum, so that the second sensing wire using platinum material has higher conductivity and long service life, and has less influence on the measurement result of the conductivity of the sample to be measured. According to the embodiment of the present invention, the specific size, such as the diameter and the length, of the second sensing line is not particularly limited as long as the second sensing line with the size can be effectively used for measuring the thermoelectric performance of the sample to be measured, and a person skilled in the art can select the second sensing line according to the actual specific size of the sample to be measured, which is not described herein again.
According to an embodiment of the present invention, referring to fig. 3, the detection apparatus may further include a heating power supply 5, and the heating power supply 5 is connected to the first heat sink 51 and the second heat sink 52 at both ends of the heater wire, respectively, for heating the heater wire. Therefore, the heating wire and the induction wire can be separated, and the influence of contact thermal resistance on a measurement result is reduced. According to the embodiment of the present invention, the specific type of the heating power source 5 is not particularly limited, and any type of heating power source known in the art may be used as long as the power source can heat the heating wire, and thus, the detailed description thereof is omitted.
According to an embodiment of the present invention, the detection apparatus may further include a first electrical parameter detection assembly connected to both ends of the first sensing line for detecting an electrical parameter of the first sensing line. Thus, through the first electrical parameter detection component, the electrical parameter of the first induction line can be measured, and the temperature of the sample to be measured at the second lap joint point 2 can be calculated.
According to an embodiment of the present invention, referring to fig. 3, the first electrical parameter detection assembly may include: a first power supply 6, a first resistor 8, a first voltmeter 10, and a second voltmeter 11. The first resistor 8, the first power source 6 and the first sensing line are connected in series to form an electric loop, the first voltmeter 10 is connected in parallel with the first resistor 8, and the second voltmeter 11 is connected in parallel with the first sensing line. In this way, the voltage values of the first resistor 8 and the first sensing line are measured, and the resistance value of the first sensing line can be calculated according to the known resistance value of the first resistor 8 in the series circuit, so that the temperature value of the second lap joint point 2 can be further calculated.
According to an embodiment of the present invention, the sensing apparatus may further include a second electrical parameter sensing assembly connected to both ends of the second sensing line for sensing an electrical parameter of the second sensing line. Therefore, through the second electrical parameter detection assembly, the electrical parameter of the second induction line can be measured, and the temperature value of the third lap joint point 3 of the sample to be measured is calculated.
According to an embodiment of the present invention, referring to fig. 3, the second electrical parameter detection assembly may include: a second power supply 7, a second resistor 9, a third voltmeter 13, and a fourth voltmeter 12. The second resistor 9, the second power supply 7 and the second sensing line are connected in series to form an electric loop, the third voltmeter 13 is connected in parallel with the second resistor 9, and the fourth voltmeter 12 is connected in parallel with the second sensing line. In this way, the voltage values of the second resistor 9 and the second induction line are measured, and the resistance value of the second induction line can be calculated from the known resistance value of the second resistor 9 in the series circuit, so that the temperature value of the third lap joint point 3 can be further calculated.
According to an embodiment of the present invention, the detecting apparatus may further include a third electrical parameter detecting component, which is connected to both ends of the first sensing line and the second sensing line, respectively, and is configured to detect an electrical parameter between the second and third bridging points 2 and 3. Thus, by the second electrical parameter detecting assembly, the electrical parameter of the lower section 42 of the sample to be measured can be measured for calculating the electrical conductivity of the sample to be measured.
According to an embodiment of the present invention, referring to fig. 5, the third electrical parameter detection assembly may include: a third power supply 4, a third resistor 14, a fifth voltmeter 15, and a sixth voltmeter 16. The third resistor 14, the third power source 4 and the lower section 42 of the sample to be measured between the second bridging point 2 and the third bridging point 3 form an electric loop, the fifth voltmeter 15 is connected in parallel with the third resistor 14, and the sixth voltmeter 16 is connected in parallel with the lower section 42 of the sample to be measured. Thus, the voltage values of the third resistor 14 and the lower section 42 of the sample to be measured are measured respectively, and then the resistance value of the lower section 42 of the sample to be measured can be calculated according to the known resistance value of the third resistor 14 in the series circuit, and the conductivity of the sample to be measured can be further calculated.
According to an embodiment of the present invention, referring to fig. 4, the sixth voltmeter 16 of the third electrical parameter testing component can be independently used for testing another electrical parameter of the sample to be tested between the second bridging point 2 and the third bridging point 3. Thus, under the operation of the heating power supply 5, the voltage difference between the sample to be measured and the two ends of the thermocouple formed by the first and second induction lines between the second lap joint point 2 and the third lap joint point 3 can be directly measured by using the sixth voltmeter 16 alone, and can be used as the direct-current seebeck potential of the thermocouple formed by the sample to be measured and the induction lines.
According to an embodiment of the present invention, the detection apparatus may further include a calculating component, which is respectively connected to the first electrical parameter detecting component, the second electrical parameter detecting component and the third electrical parameter detecting component, for determining the thermoelectric performance parameter of the sample to be detected. Therefore, the test result of the thermoelectric performance parameter of the sample to be tested can be directly obtained by data processing of the computing component as long as the electrical parameter of the sample to be tested is measured through step-by-step connection.
According to an embodiment of the present invention, the thermoelectric performance parameter of the sample to be tested includes at least one of thermal conductivity, seebeck coefficient and electrical conductivity.
In some embodiments of the invention, the thermal conductivity is determined based on the following equation:
λ＝λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2)，
wherein λ is3Is the thermal conductivity of the second induction line, A3Is the cross-sectional area of the second induction line, /)3Is the length of the second induction line, /)42Is the length of the lower segment 42 of the sample to be measured, A4Is the cross-sectional area of the sample to be measured,/31Is the length between the first end of the second induction line and the third overlap point 3, |32Is the length between the second end of the second induction line and the third lap point 3, △ R2Is the resistance change, R, of the first induction line after the heating power supply 5 is started03Is the resistance of the second induction line at a temperature of 0 deg.C, βT3Is the temperature coefficient of resistance of the second induction line at the ambient temperature T, △ R3Is the resistance change, R, of the second induction line after the heating power supply 5 is started02Is the first induction line at a temperature of 0 DEG CResistance, βT2Is the temperature coefficient of resistance of the first sensing wire at the ambient temperature T.
In some embodiments of the invention, the seebeck coefficient is determined based on the following equation:
S＝VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)+Ss，
wherein, VSIs the DC Seebeck potential, R, of the thermocouple formed by the lower section 42 of the sample to be measured and the second sections 22, 32 of the first and second induction lines02Is the resistance of the first induction line at a temperature of 0 deg.C, βT2Is the temperature coefficient of resistance, R, of the first induction line at ambient temperature T03Is the resistance of the second induction line at a temperature of 0 deg.C, βT3Is the temperature coefficient of resistance of the second induction line at the ambient temperature T, △ R2Is the resistance change of the first induction line after the heating power is turned on, △ R3Is the resistance change of the second induction line after the heating power supply is started, SsIs the seebeck coefficient of the wire material at ambient temperature T.
In some embodiments of the invention, the conductivity is determined based on the following equation: sigma ═ l42/R42A4Wherein l is42Is the length of the lower section of the sample to be measured, R42Is the resistance of the lower section of the sample to be measured, A4Is the cross-sectional area of the sample to be measured.
In summary, according to the embodiments of the present invention, the present invention provides an apparatus for detecting thermoelectric performance parameters of a one-dimensional micro-nano material, which can be effectively used for detecting thermoelectric performance parameters of a one-dimensional micro-nano material, and can separate a heating end from a testing end, thereby greatly reducing errors caused by thermal resistance contact, and improving measurement accuracy; on the basis of carrying out primary sample lapping, various thermoelectric performance parameters of the sample to be measured can be obtained in sequence by changing the measuring circuit, so that the thermoelectric performance of the sample to be measured can be comprehensively characterized, and the method has high integration level.
In another aspect of the invention, the invention provides a method for detecting thermoelectric performance parameters of the one-dimensional micro-nano material by using the equipment. The detection method of the present invention will be described in detail with reference to FIGS. 2 to 7. According to an embodiment of the present invention, referring to fig. 6, the detection method includes:
s100: and overlapping the sample to be detected on the first overlapping point, the second overlapping point and the third overlapping point.
In this step, referring to fig. 2, the one-dimensional micro-nano material to be measured (also referred to as a sample to be measured) is vertically lapped on the heating line, the first induction line and the second induction line, and a first lap joint point 1, a second lap joint point 2 and a third lap joint point 3 are sequentially formed from top to bottom. Therefore, the heating wire and the induction wire can be effectively separated by adopting a three-wire method, and the test method of double induction wires is adopted, so that the influence of the contact resistance on the test result is eliminated.
According to the embodiment of the present invention, the specific positions of the first lap joint point 1 on the heating wire, the second lap joint point 2 on the first induction wire, and the third lap joint point 3 on the second induction wire are not particularly limited as long as the positions of the three lap joint points do not affect the accuracy of the test result of the sample to be tested, and can be set by those skilled in the art according to the actual test condition. In some embodiments of the present invention, the first lap point 1 may be disposed at a midpoint position of the heating wire, the second lap point 2 may be disposed at a midpoint position of the first sensing wire, and the third lap point 3 may be disposed at a midpoint position of the second sensing wire. Therefore, the sample to be detected is placed in the middle, and the symmetry of the three detection lines which are symmetrical left and right is favorable for the accuracy of the thermoelectric performance parameters of the sample to be detected.
According to the embodiment of the present invention, the specific overlapping manner of the sample to be tested with the heating wire, the first sensing wire and the second sensing wire is not particularly limited as long as the overlapping manner enables the first overlapping point 1, the second overlapping point 2 and the third overlapping point 3 to effectively transfer heat, and those skilled in the art can select the overlapping manner according to the specific materials of the sample to be tested and the three sensing wires. In some embodiments of the present invention, the sample to be measured and the heating wire, the first sensing wire and the second sensing wire may be overlapped by means of silver glue bonding. Therefore, the first lap joint point 1, the second lap joint point 2 and the third lap joint point 3 are formed in a lap joint mode of silver glue bonding, the three lap joint points are higher in stability and low in contact thermal resistance, and obvious influence on a detection result of a sample to be detected cannot be generated.
S200: and starting a heating power supply under the vacuum condition to heat the heating wire.
In this step, the inspection apparatus on which the sample to be inspected is lapped is vacuumized, and then, referring to fig. 3, the heating power source 5 is turned on and the heating wire is heated, so that the first lap joint point 1 on which the heating wire is lapped becomes a high temperature end, and different temperature drops are formed on the second lap joint point 2 and the third lap joint point 3 by the heat conduction of the sample to be inspected.
According to the embodiment of the present invention, the specific conditions of the vacuum treatment are not particularly limited as long as the vacuum conditions can effectively eliminate the influence of natural convection on the detection result, and those skilled in the art can select and adjust the conditions according to the material of the sample to be detected and the actual detection process. In some embodiments of the invention, the vacuum level may be at 10 degrees f-3Pa or less, and thus, the influence of the air on the convective heat transfer can be reduced by the above-mentioned high degree of vacuum. In some specific examples, the high vacuum degree can be realized by using a two-stage vacuum pumping mode of a vacuum pump and a molecular pump, and the influence of air on the convective heat exchange can be effectively reduced by using the equipment and the method.
S300: and acquiring the electrical parameters by utilizing the first electrical parameter detection assembly, the second electrical parameter detection assembly and the third electrical parameter detection assembly.
In this step, referring to fig. 3 to 5, under the heating condition, the first electrical parameter detection assembly, the second electrical parameter detection assembly, and the third electrical parameter detection assembly may be used to measure the thermal conductivity, the seebeck coefficient, and the electrical conductivity of the sample to be measured in sequence, and the specific steps refer to fig. 7.
S310: and acquiring the related electrical parameters of the thermal conductivity by using the first electrical parameter detection assembly and the second electrical parameter detection assembly.
In this step, referring to fig. 3, the first electrical parameter detecting element is connected to the first sensing line, wherein the first resistor 8, the first power source 6 and the first sensing line of the first electrical parameter detecting element are connected in series to form an electrical loop, the first voltmeter 10 is connected in parallel to the first resistor 8, and the second voltmeter 11 is connected in parallel to the first sensing line. In this way, the voltage values of the first resistor 8 and the first sensing line are measured, and the resistance value of the first sensing line can be calculated according to the known resistance value of the first resistor 8 in the series circuit, so that the temperature value of the second lap joint point 2 can be further calculated.
According to the embodiment of the invention, the electrical parameters related to the thermal conductivity can comprise the resistance value of the first resistor 8, the voltage value of the first voltmeter 10 and the voltage value of the second voltmeter 11, so that the resistance value of the first induction line under the heating condition of the sample to be detected can be obtained through calculation, and then the resistance change value △ R of the first induction line after the heating power supply 5 is started can be further calculated according to the initial resistance value of the first induction line2。
In this step, referring to fig. 3, a second electrical parameter detecting component may be connected to the second sensing line at the same time, wherein the second resistor 9, the second power supply 7 and the second sensing line of the second electrical parameter detecting component are connected in series to form an electrical loop, the third voltmeter 13 is connected in parallel with the second resistor 9, and the fourth voltmeter 12 is connected in parallel with the second sensing line. In this way, the voltage values of the second resistor 9 and the second induction line are measured, and the resistance value of the second induction line can be calculated from the known resistance value of the second resistor 9 in the series circuit, so that the temperature value of the third lap joint point 3 can be further calculated.
According to the embodiment of the invention, the electrical parameters related to the thermal conductivity can further comprise the resistance value of the second resistor 9, the voltage value of the third voltmeter 13 and the voltage value of the fourth voltmeter 12, so that the resistance value of the second induction line under the heating condition of the sample to be detected can be obtained through calculation, and then the resistance change value △ R of the second induction line after the heating power supply 5 is started can be further calculated according to the initial resistance value of the first induction line3。
S320: and acquiring the related electrical parameters of the Seebeck coefficient by using the third electrical parameter detection component.
In this step, referring to fig. 4, the sixth voltmeter 16 of the third electrical parameter detection assembly is solely used for detecting the electrical parameter related to the seebeck coefficient of the sample to be detected between the second lap point 2 and the third lap point 3. In this way, under the heating of the heating power source 5, the voltage difference between the sample to be measured and the induction line between the second and third bridging points 2 and 3 can be directly measured by the sixth voltmeter 16 alone, and the voltage difference can be used as the dc seebeck potential of the thermocouple formed by the sample to be measured and the induction line.
S330: and acquiring the related electrical parameter of the conductivity by using the third electrical parameter detection component.
In this step, referring to fig. 5, a third electrical parameter detecting component is connected to both ends of the first sensing line and the second sensing line, respectively, for detecting an electrical parameter between the second and third bridging points 2 and 3. The third resistor 14, the second power source 4 and the lower section 42 of the sample to be measured between the second bridging point 2 and the third bridging point 3 form an electric loop, the fifth voltmeter 15 is connected in parallel with the third resistor 14, and the sixth voltmeter 16 is connected in parallel with the lower section 42 of the sample to be measured. Thus, the voltage values of the third resistor 14 and the lower section 42 of the sample to be measured are measured respectively, and then the resistance value of the lower section 42 of the sample to be measured can be calculated according to the known resistance value of the third resistor 14 in the series circuit, and the conductivity of the sample to be measured can be further calculated.
According to an embodiment of the invention, the electrical parameter related to electrical conductivity may comprise: the resistance value of the third resistor 14, the voltage value of the sixth voltmeter 16, and the voltage value of the sixth voltmeter 16. Thus, the resistance value of the lower section 42 of the sample to be measured can be obtained by calculation.
S400: and determining the thermoelectric performance parameters of the one-dimensional micro-nano material based on the electrical parameters obtained in the step S300.
In this step, according to various relevant electrical parameters obtained in step S300, the calculating module of the detecting apparatus can calculate thermoelectric performance parameters of the one-dimensional micro-nano material. According to an embodiment of the invention, the thermoelectric performance parameter may comprise at least one of thermal conductivity, seebeck coefficient and electrical conductivity.
In some embodiments of the present invention, the resistance change △ R of the first sensing line after the heating power is turned on is obtained according to the step S3102And a resistance change △ R of the second induction line after the heating power supply is started3And a length l of a lower section of the sample to be measured in advance before the thermoelectric performance test is performed42Cross-sectional area A4And the ambient temperature T, then the thermal conductivity of the sample to be tested can be determined by the calculation module of the detection device based on the following formula:
λ＝λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2)；
wherein the following parameters are known: lambda [ alpha ]3Is the thermal conductivity of the second induction line, A3Is the cross-sectional area of the second induction line, /)3Is the length of the second induction line, < i >31Is the length between the first end of the second induction line and the third lap point,/32Is the length between the second end of the second induction line and the third lap point, R03Is the resistance of the second induction line at a temperature of 0 deg.C, βT3Is the temperature coefficient of resistance, R, of the second induction line at ambient temperature T02The first induction line is at 0 deg.CResistance of lower, βT2Is the temperature coefficient of resistance of the first sensing wire at the ambient temperature T.
In some embodiments of the present invention, the resistance change △ R of the first sensing line after the heating power is turned on is obtained according to the step S3102And a resistance change △ R of the second induction line after the heating power supply is started3And the direct current seebeck potential V of the thermocouple formed by the sample to be measured and the induction wire obtained in the step S320SAnd the environmental temperature T is measured in advance before the thermoelectric performance detection is carried out, and then the calculating module of the detection device can determine the Seebeck coefficient of the thermocouple formed by the sample to be detected and the induction line based on the following formula:
S*＝VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2)；
wherein the following parameters are known: r02Is the resistance of the first induction line at a temperature of 0 deg.C, βT2Is the temperature coefficient of resistance, R, of the first induction line at ambient temperature T03Is the resistance of the second induction line at a temperature of 0 deg.C, βT3Is the temperature coefficient of resistance of the second sensing wire at the ambient temperature T. The seebeck coefficient of the sample to be tested can be further determined by the following formula:
S＝S*+Ss；
wherein the following parameters are known quantities: ssIs the seebeck coefficient of the wire material at ambient temperature T.
In some embodiments of the present invention, the resistance R of the lower section of the sample to be tested obtained according to the step S33042And a length l of a lower section of the sample to be measured in advance before the thermoelectric performance test is performed42And cross-sectional area A4Then, the calculation module of the detection device can determine the conductivity of the sample to be detected based on the following formula:
σ＝l42/R42A4。
in summary, according to the embodiments of the present invention, the present invention provides a detection method, which is suitable for detecting thermoelectric performance parameters of a one-dimensional micro-nano material, and the influence of contact thermal resistance on a test result can be effectively eliminated by respectively providing a heating end and a testing end, so that the accuracy of the detection result of the thermoelectric performance parameters of the one-dimensional micro-nano material is significantly improved; on the basis of carrying out primary sample lapping, the thermal conductivity, the electric conductivity and the Seebeck coefficient of the sample to be measured can be sequentially obtained by changing the measuring circuit, so that the thermoelectric property of the sample to be measured can be comprehensively characterized, and the integrated level is high; the detection method has the advantages of high measurement precision, easiness in implementation, low test cost and the like. Those skilled in the art can understand that the features and advantages described above for the apparatus for detecting thermoelectric performance parameters of a one-dimensional micro-nano material are still applicable to the method for detecting thermoelectric performance parameters of a one-dimensional micro-nano material, and are not described herein again.
The invention will now be described with reference to specific examples, which are intended to be illustrative only and not to be limiting in any way.
Example 1
In this embodiment, the detection device shown in fig. 1 is used, and the sample to be detected is connected in the lap joint manner shown in fig. 2, so as to detect the thermoelectric performance parameters of the sample to be detected.
Specifically, in the detection apparatus shown in fig. 1, three test lines are overlapped by parallel suspensions, and end points thereof are respectively connected to the heat sink 51, the heat sink 52, the heat sink 53, the heat sink 54, the heat sink 55 and the heat sink 56, a sample to be detected is overlapped on the test lines along a vertical direction suspension, and is respectively connected to the lap joint point 1 with the heating line, the lap joint point 2 with the first induction line and the lap joint point 3 with the second induction line, and the lap joint point 1, the lap joint point 2 and the lap joint point 3 divide the test lines and the sample to be detected into eight parts, i.e., a test line 11, a test line 12, a test line 21, a test line 22, a test line 31, a test line 32, an upper section 41 of the sample to be detected.
In the specific detection step, the experimental device needs to be placed in a vacuum constant temperature environment (the vacuum degree is 10)-3Below Pa), a direct current is switched on to heat the heating wire to generate a high-temperature end of the sample to be detected, part of heat is conducted along the sample to be detected and is conducted to a heat sink through the test wire 21, the test wire 22, the test wire 31 and the test wire 32, the temperature of the heat sink is consistent with the ambient temperature, the ambient temperature is detected and controlled by a temperature controller, and the control precision is +/-0.1K; the temperature change at the lap point 2 and the lap point 3 is determined by measuring the resistance change of the first induction line and the second induction line.
In the testing process, firstly, the resistances of a first induction line and a second induction line at the ambient temperature are obtained under the condition of no power-on heating, then direct current is conducted on the heating line, a high-temperature end is generated due to the joule heat effect, part of heat is transferred to a heat sink through a sample to be tested through a test line 21, a test line 22, a test line 31 and a test line 32, after the steady state is reached, linear temperature distribution is generated on the four sections of test lines, a steady-state temperature difference is generated between a lap joint point 2 and a lap joint point 3, the resistance of the test line has a good corresponding relation with the temperature, the temperature rises at the lap joint point 2 and the lap joint point 3 can be obtained by measuring the resistance of the test line, and the thermal conductivity of the sample to be tested can be determined by utilizing the heat flow relation at the lap joint point 3 and the thermop; for the thermoelectric material, the steady-state temperature difference between the lap joint point 2 and the lap joint point 3 can generate direct-current Seebeck voltage, a high-precision digital voltmeter can be used for directly obtaining a voltage signal, the first induction line and the second induction line are used for determining the steady-state temperature difference, and the Seebeck coefficient of a sample to be measured can be obtained; in the case of no heating, the change circuit regards test lines 21, 22, 31 and 32 as conducting lines, and the resistance of the sample to be measured can be measured to obtain the conductivity of the sample. The method is named as a three-wire method because three test wires are used as a heating wire and an induction wire for measurement respectively.
Referring to fig. 3, the thermal conductivity measuring circuit is a closed loop formed by the dc power supply 5 and the heating wire, and generates heat by electric heating; the direct current power supply 6, the standard resistor 8 and the first induction line form a closed loop, and the voltages at two ends of the standard resistor 8 and the first induction line are respectively detected through high-precision digital voltmeters 10 and 11 to further obtain the resistance of the first induction line; the direct current power supply 7, the standard resistor 9 and the second induction line form a closed loop, and the high-precision digital voltmeters 12 and 13 are used for respectively detecting the voltages at two ends of the standard resistor 9 and the second induction line so as to further obtain the resistance of the second induction line.
Referring to fig. 4, when measuring the seebeck coefficient thermally, the high-precision digital voltmeter 10, the test line 22, the lower section 42 of the sample to be measured, and the test line 32 form a closed loop, and the direct current seebeck voltage generated by the thermocouple formed by the material to be measured between the lap joint point 2 and the lap joint point 3 and the induction line is measured in a state that the direct current power supply 5 is energized to the heating line.
Referring to fig. 5, the conductivity measuring circuit is a closed loop formed by connecting the dc power supply 6, the test line 31, the lower section 42 of the sample to be measured, the test line 21 and the standard resistor 8 in series, the voltage at two ends of the lower section 42 of the sample to be measured is obtained by the high-precision digital voltmeter 10 through the test line 22 and the test line 32, the voltage at two ends of the standard resistor 8 is obtained by the high-precision digital voltmeter 11, and the resistance of the lower section 42 of the sample to be measured is calculated to obtain the conductivity of the lower section 42 of the sample to be.
Then according to the formula: λ ═ λ3A3l3l42R02βT2ΔR3/A4l31l32(ΔR2R03βT3-ΔR3R02βT2) Determining the thermal conductivity of a sample to be detected; according to the formula: s*＝VSR02βT2R03βT3/(ΔR2R03βT3-ΔR3R02βT2) Determining the Seebeck coefficient of a thermocouple formed by the sample to be measured and the induction line, and further according to a formula: s ═ S + SsDetermining the Seebeck coefficient of a sample to be detected; according to the formula: sigma ═ l42/R42A4And determining the conductivity of the sample to be detected.
Wherein λ is3Is the thermal conductivity of the second induction line, A3Is the cross-sectional area of the second induction line, A4Is the cross-sectional area of the sample to be measured,/3Is the length of the second induction line, /)42Is the length of the lower segment 42 of the sample to be measured,/31Is the length of the section of test line 31,/32Is the length of the test line 32 section, R02Is the resistance, R, of the first induction line at a temperature of 0 deg.C (273.15K)03Is the resistance of the second induction line at a temperature of 0 ℃ (273.15K), βT2Is the temperature coefficient of resistance of the first induction line at ambient temperature T, βT3Is the temperature coefficient of resistance of the second induction line at the ambient temperature T, △ R2Is the resistance change of the first induction line after the energization heating, △ R3Is the resistance change, V, of the second induction line after the energization heatingSIs the DC Seebeck potential, S, of the thermocouple formed by the lower section 42 of the sample to be measured and the induction linesIs the Seebeck coefficient value, R, of the first and second induction lines42Is the resistance of the lower segment 42 of the sample to be measured.
The results of measuring the thermal conductivity of this example are shown in FIG. 8. As can be seen from FIG. 8, the thermal conductivity of the platinum-rhodium 13 alloy as the measured material in the temperature range of 200-300K was measured to be 25.3W m-1K-1To 38.4W m-1K-1The measurement result has higher precision on the whole, and the measurement uncertainty is 8 percent. .
The detection result of the seebeck coefficient of this example is shown in fig. 9. As can be seen from FIG. 9, the Seebeck coefficient of the thermocouple formed by the platinum-rhodium 13 alloy as the measured material and the platinum as the sensing wire material in the temperature range of 200-300K was measured from 3.1 μ VK-1Increased to 6.3. mu. V K-1The measurement uncertainty is 5%; the Seebeck coefficient of the platinum-rhodium 13 alloy which is obtained as the tested material after eliminating the influence of induction wire platinum is from 1.6 mu V K on the whole-1Reduced to 1.1 μ V K-1Maximum absolute error of 0.4 μ V K-1And has high resolution.
The results of the conductivity measurements for this example are shown in FIG. 10. From FIG. 10As can be seen, the measured electrical conductivity of the platinum-rhodium 13 alloy of the measured material in the temperature range of 200-300K is from 3.9 multiplied by 106S m-1Reduced to 3.3 × 106S m-1The measurement uncertainty was 3%.
Compared with the prior art, the heating end is separated from the testing end, so that heat is transferred to a testing line from a sample to be tested at the lap joint point 2 and the lap joint point 3, the deviation directions of errors generated by thermal contact resistance at the lap joint point 2 and the lap joint point 3 are the same, and through compensation, the difference between the actual temperature difference of the lap joint point 2 and the lap joint point 3 on the testing line and the measured temperature difference of the lap joint point 2 and the lap joint point 3 on the induction line is greatly reduced, namely the error caused by the thermal contact resistance is greatly reduced, and the measuring precision is improved; on the basis of carrying out primary sample overlap joint, can obtain the thermal conductivity, the electric conductivity and the seebeck coefficient of the sample that awaits measuring in proper order through changing measuring circuit, can carry out comprehensive characterization to the thermoelectric properties of the sample that awaits measuring, have very high integrated level. The invention has the advantages of high measurement precision, easy realization, low test cost and the like.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to a number of indicated technical features. Thus, a feature defined as "first," "second," "third," etc. may explicitly or implicitly include at least one of the feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710139104.4A CN107085007B (en) | 2017-03-09 | 2017-03-09 | Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710139104.4A CN107085007B (en) | 2017-03-09 | 2017-03-09 | Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107085007A CN107085007A (en) | 2017-08-22 |
| CN107085007B true CN107085007B (en) | 2019-07-26 |
Family
ID=59615054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710139104.4A Active CN107085007B (en) | 2017-03-09 | 2017-03-09 | Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107085007B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11474060B2 (en) * | 2017-09-05 | 2022-10-18 | University Of Connecticut | Instruments for measurement of multiple material properties |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108398456B (en) | 2018-01-24 | 2020-06-09 | 武汉嘉仪通科技有限公司 | Method and device for testing thermal conductivity of nanoscale material |
| CN110031504B (en) * | 2019-03-20 | 2021-07-20 | 东南大学 | A test method for contact thermal resistance between one-dimensional nanostructures with circular cross-section |
| CN112881464B (en) * | 2021-01-20 | 2022-12-09 | 中国科学院工程热物理研究所 | Method and device for directly and comprehensively measuring thermoelectric performance of micro-nano material in situ |
| CN112909155B (en) * | 2021-01-20 | 2024-06-28 | 中国科学院工程热物理研究所 | Detector for directly measuring thermoelectric figure of merit of micro-nano material and preparation process |
| CN114264692B (en) * | 2021-12-14 | 2024-04-23 | 南京理工大学 | A method for simultaneously measuring thermal conductivity and emissivity of micro-nano materials |
| CN119290954A (en) * | 2024-09-02 | 2025-01-10 | 北京大学 | Thermal measurement device |
| CN120028378A (en) * | 2025-01-22 | 2025-05-23 | 北京大学 | Thermal conductivity measurement method and measurement device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101354388A (en) * | 2008-09-02 | 2009-01-28 | 北京大学 | A method and system for measuring the Seebeck coefficient of quasi-one-dimensional nanomaterials |
| CN102305807A (en) * | 2011-05-25 | 2012-01-04 | 清华大学 | Method for measuring Seebeck coefficient of micro/nano thermoelectric materials or devices |
| CN102818820A (en) * | 2012-09-11 | 2012-12-12 | 中国科学技术大学 | System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires |
| CN104880482A (en) * | 2015-04-13 | 2015-09-02 | 中国科学院物理研究所 | Method and device for measuring heat conductivity of quasi-one-dimensional conductive material |
| CN105628732A (en) * | 2015-12-23 | 2016-06-01 | 华中科技大学 | Device for measuring Seebeck coefficient and method of device |
| KR101682309B1 (en) * | 2015-07-29 | 2016-12-02 | 경상대학교산학협력단 | Defect evaluation apparatus of the composite materials |
-
2017
- 2017-03-09 CN CN201710139104.4A patent/CN107085007B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101354388A (en) * | 2008-09-02 | 2009-01-28 | 北京大学 | A method and system for measuring the Seebeck coefficient of quasi-one-dimensional nanomaterials |
| CN102305807A (en) * | 2011-05-25 | 2012-01-04 | 清华大学 | Method for measuring Seebeck coefficient of micro/nano thermoelectric materials or devices |
| CN102818820A (en) * | 2012-09-11 | 2012-12-12 | 中国科学技术大学 | System for measuring heat conductivity coefficient of nano materials based on vanadium dioxide nano wires |
| CN104880482A (en) * | 2015-04-13 | 2015-09-02 | 中国科学院物理研究所 | Method and device for measuring heat conductivity of quasi-one-dimensional conductive material |
| KR101682309B1 (en) * | 2015-07-29 | 2016-12-02 | 경상대학교산학협력단 | Defect evaluation apparatus of the composite materials |
| CN105628732A (en) * | 2015-12-23 | 2016-06-01 | 华中科技大学 | Device for measuring Seebeck coefficient and method of device |
Non-Patent Citations (4)
| Title |
|---|
| Study of the thermal, electrical and thermoelectric properties of metallic nanofilms;Weigang Ma et al.;《International Journal of Heat and Mass Transfer》;20131231;第639–651页 |
| Systematic characterization of transport and thermoelectric properties of a macroscopic graphene fiber;Weigang Ma et al.;《Nano Research》;20161231;第3536–3546页 |
| 热电材料塞贝克系数测试影响因素研究;李蒙 等;《中国测试》;20140731;第40卷(第4期);第132-136页 |
| 碳纤维与热沉间接触热阻随温度变化的实验研究;刘锦辉 等;《工程热物理学报》;20140930;第35卷(第9期);第1789-1792页 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11474060B2 (en) * | 2017-09-05 | 2022-10-18 | University Of Connecticut | Instruments for measurement of multiple material properties |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107085007A (en) | 2017-08-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107085007B (en) | Detect the device and method of one-dimensional micro-nanometer conducting material thermoelectricity performance parameter | |
| JP2589283B2 (en) | Isothermal connector | |
| CN104422711B (en) | Variable temperature sample platform and thermoelectric property measuring method | |
| CN103091354B (en) | Method for testing film thermal conductivity | |
| CN107003169B (en) | Liquid level detection circuit, liquidometer, the container containing liquidometer and the gasifier using the container | |
| JPH1151797A (en) | Apparatus and method for measurement of heat-loss pressure | |
| CN102914560A (en) | Device and method for measuring film thermoelectric performance parameters | |
| CN109443600A (en) | In the scaling method of piece film platinum resistor temperature sensor | |
| KR20150053488A (en) | thermoelectric conductivity measurement instrument of thermoelectric device and measuring method of the same | |
| CN106768493A (en) | A kind of film TR heat flow transducer of series-fed | |
| CN109613051B (en) | Device and method for measuring Seebeck coefficient of material by using contrast method | |
| CN102788651A (en) | Method for detecting and calibrating thermocouples | |
| RU2577389C1 (en) | Method of calibrating thermoelectric heat flux sensors | |
| US10088439B2 (en) | Thermophysical property measurement method and thermophysical property measurement apparatus | |
| CN111238672B (en) | A method for dynamic temperature measurement of superconducting tape based on magnetic microscopy | |
| CN107607214B (en) | Temperature measuring method and electromigration testing method | |
| CN109613054B (en) | A method for measuring the longitudinal thermal conductivity of direct energization | |
| CN104122469B (en) | Method for increasing measured seebeck coefficient accuracy of thermoelectric material | |
| CN107255650B (en) | A Test Method for Seebeck Coefficient of Thermoelectric Materials | |
| CN105785102B (en) | Thermoelectrical potential measuring circuit, platform and the method for minute yardstick sample | |
| JP2020517931A (en) | Device for measuring gas velocity or flow rate | |
| Corsan | Axial heat flow methods of thermal conductivity measurement for good conducting materials | |
| JP2002131211A (en) | Method and device for measuring thermal and electrical characteristics of membrane thermoelectric matter | |
| CN106908645A (en) | A kind of method for overcoming direct current energy meter current divider Seebeck effect | |
| Inglis et al. | Current-independent ac-dc transfer errors in single-junction thermal converters |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |