CN107046107A - Handle PEDOT:PSS method, QLED and preparation method - Google Patents
Handle PEDOT:PSS method, QLED and preparation method Download PDFInfo
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- CN107046107A CN107046107A CN201611147004.8A CN201611147004A CN107046107A CN 107046107 A CN107046107 A CN 107046107A CN 201611147004 A CN201611147004 A CN 201611147004A CN 107046107 A CN107046107 A CN 107046107A
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- 229920000144 PEDOT:PSS Polymers 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000002253 acid Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000012545 processing Methods 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims description 21
- 239000002096 quantum dot Substances 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 10
- 229910052736 halogen Inorganic materials 0.000 claims description 10
- 150000002367 halogens Chemical class 0.000 claims description 10
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 230000008595 infiltration Effects 0.000 abstract description 5
- 238000001764 infiltration Methods 0.000 abstract description 5
- 238000012546 transfer Methods 0.000 abstract description 4
- 238000010306 acid treatment Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 239000000243 solution Substances 0.000 description 21
- 229960000583 acetic acid Drugs 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010129 solution processing Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 238000001215 fluorescent labelling Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention discloses processing PEDOT:PSS method, QLED and preparation method, handles PEDOT:PSS method includes step：Making there is into PEDOT:PSS substrate is placed on warm table and heated, and acid solution is added dropwise, and acid solution is paved with PEDOT:PSS surfaces, treat that surface is cooled down after being evaporated.The present invention is to PEDOT:PSS is carried out after acid treatment, due to proton and X‑The infiltration of ion so that PEDOT:PSS is separated, and forms good exciton transfer passage so that PEDOT:PSS conductances are improved, the effect with enhancing device performance.
Description
Technical field
The present invention relates to display material field, more particularly to processing PEDOT:PSS method, QLED and preparation method.
Background technology
Semiconductor-quantum-point has the humorous optico-electronic properties of size adjustable, be widely used in light emitting diode,
Solar cell and biological fluorescent labelling.Quantum dot synthetic technology passes through the development of more than 20 years, and people can synthesize respectively
High-quality nano material is planted, its photoluminescence efficiency can reach more than 85%.Because quantum dot has dimension adjustable
The features such as luminous, luminous line width, high photoluminescence efficiency and heat endurance, therefore it is used as using quantum dot the quantum dot of luminescent layer
Light emitting diode (QLED) is display of future generation and the solid-state illumination light source of great potential.By development for many years, QLED technologies
Obtain huge development.
PEDOT be it is a kind of be frequently used in QLED and the insoluble high light transmitting electro-conductive material not melted, in order to fully apply
PEDOT high light transmitting electro-conductive performance, research is found, after PEDOT is polymerize with PSS, and it not only has excellent light-transmissive conductive,
Also easily it is dissolved in simultaneously in aqueous phase, so, PEDOT:The PSS aqueous solution is widely used in solar cell and QLED
In.But, although PSS addition solves the problem of PEDOT dissolves, but the problem of bring new simultaneously, PEDOT conduction
Rate declines, and this also have impact on the raising of QLED device performances.
Therefore, prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide processing PEDOT:PSS method, QLED and
Preparation method, it is intended to solve existing PEDOT:PSS conductances are low, influence QLED device performances the problem of.
Technical scheme is as follows：
One kind handles PEDOT using acid solution:PSS method, wherein, including step：
Making there is into PEDOT:PSS substrate is placed on warm table and heated, and acid solution is added dropwise, and acid solution is paved with PEDOT:
PSS surfaces, treat that surface is cooled down after being evaporated.
Described use acid solution processing PEDOT:PSS method, wherein, the temperature of heating is 90 ~ 110 DEG C.
Described use acid solution processing PEDOT:PSS method, wherein, the acid solution is halogen hydracid, hydrochloric acid or vinegar
Acid.
Described use acid solution processing PEDOT:PSS method, wherein, the concentration of the acid solution is 1-20mol/L.
A kind of QLED preparation method, wherein, including step：
A, in the substrate surface containing hearth electrode hole transmission layer is made, the material of the hole transmission layer is PEDOT:PSS；
B, substrate is placed on warm table and heated, and acid solution is added dropwise, acid solution is paved with PEDOT:PSS surfaces, treat that surface is steamed
Cooled down after dry；
C, hole transport layer surface deposition point luminescent layer；
D, quantum dot light emitting layer surface deposit electron transfer layer；
E, electric transmission layer surface make top electrode.
Described QLED preparation method, wherein, in the step B, the temperature of heating is 90 ~ 110 DEG C.
Described QLED preparation method, wherein, in the step B, the acid solution is halogen hydracid, hydrochloric acid or acetic acid.
Described QLED preparation method, wherein, in the step B, the concentration of the acid solution is 1-20mol/L.
A kind of QLED, wherein, passed successively including the substrate containing hearth electrode, hole transmission layer, quantum dot light emitting layer, electronics
Defeated layer and top electrode, wherein, the material of the hole transmission layer is PEDOT:PSS, the PEDOT:PSS is using as described above
Method processing is obtained.
Described QLED, wherein, the thickness of the hole transmission layer is 30-70nm.
Beneficial effect：The present invention is to PEDOT:PSS is carried out after acid treatment, due to proton and X-The infiltration of ion so that
PEDOT:PSS is separated, and forms good exciton transfer passage so that PEDOT:PSS conductances are improved, with booster
The effect of part performance.
Brief description of the drawings
Fig. 1 is a kind of flow chart of QLED of the invention preparation method preferred embodiment.
Fig. 2 is a kind of QLED structural representation of the invention.
Embodiment
The present invention provides processing PEDOT:PSS method, QLED and preparation method, to make the purpose of the present invention, technical side
Case and effect are clearer, clear and definite, and the present invention is described in more detail below.It should be appreciated that specific reality described herein
Example is applied only to explain the present invention, is not intended to limit the present invention.
It is provided by the present invention a kind of using acid solution processing PEDOT:PSS method, it includes step：
Making there is into PEDOT:PSS substrate is placed on warm table and heated, and acid solution is added dropwise, and acid solution is paved with PEDOT:
PSS surfaces, treat that surface is cooled down after being evaporated.
In the present invention, in traditional PEODT:On PSS material foundations, PEODT is handled using acid solution:PSS, to carry
Its high conductance, so as to improve its Hole injection capacity.In PEDOT:After PSS is handled through peracid solutions, due to proton and X-From
Son（Such as I-Ion or Cl-Ion）Infiltration so that PEDOT:PSS is separated, and forms good exciton transfer passage, with
Improve PEDOT:PSS conductances.
Further, the temperature of heating is preferably 90 ~ 110 DEG C, such as 100 DEG C, PEDOT under the conditions of being somebody's turn to do:PSS phase separation effects
More preferably, conductance can further be lifted.
Further, the acid solution is preferably halogen hydracid, hydrochloric acid or acetic acid.It is further preferred that using halogen hydracid（HI）Come
To PEDOT:PSS processing.
It is preferred that, the concentration of the acid solution is 1-20mol/L.
By taking halogen hydracid as an example, when selection is less than 1mol/L, the concentration is relatively low, proton and I-Ion pair PEDOT:PSS's
Penetrate into more insufficient, PEDOT:PSS is separated not exclusively, so PEDOT:PSS electrical conductivity improves smaller.
When the concentration of selection is more than 20mol/L, concentration is very big, proton and I-Ion pair PEDOT:PSS infiltration is filled very much
Point, PEDOT:PSS can be very good to be separated, still, on the other hand, when HI is excessive, because its non-semiconductor characteristic can hinder
Exciton is hindered to be injected into HTL（Hole transmission layer）, it is impossible to significantly improve device efficiency.
So, the present invention preferably selects suitable acid concentration between 1-20mol/L so that PEDOT:PSS abundant phases point
From while, do not have surplus sour remaining influence exciton injection.
The present invention also provides the preparation method preferred embodiment of QLED a kind of, as shown in figure 1, it includes step：
S1, in the substrate surface containing hearth electrode hole transmission layer is made, the material of the hole transmission layer is PEDOT:PSS；
S2, substrate is placed on warm table and heated, and acid solution is added dropwise, acid solution is paved with PEDOT:PSS surfaces, treat that surface is steamed
Cooled down after dry；
S3, hole transport layer surface deposition point luminescent layer；
S4, quantum dot light emitting layer surface deposit electron transfer layer；
S5, electric transmission layer surface make top electrode.
Specifically, before the step S1, also substrate is cleaned, for example, substrate is placed in acetone in order,
It is cleaned by ultrasonic in washing lotion, deionized water and isopropanol, each of the above step ultrasound is both needed to lasting 15 minutes or so.Treat ultrasound
After the completion of substrate is positioned over dry for standby in cleaning oven.Described substrate is preferably ito substrate.
In the step S1, after after drying substrates, in substrate surface spin coating hole transmission layer PEDOT:PSS, this hole
The thickness of transport layer is preferably 30-70nm, for example 50nm, and this is placed on 150 DEG C of warm table heats 15min.
In the step S2, the substrate that previous step is handled is placed on warm table and heated, and acid solution is added dropwise, be paved with
Whole PEDOT:PSS surfaces, treat that cooling is removed in surface after being evaporated.
Wherein, in the step S2, the temperature of heating is preferably 90 ~ 110 DEG C.The acid solution is preferably halogen hydracid, salt
Acid or acetic acid.The concentration of the acid solution is preferably 1-20mol/L.One preferably example is：Heating-up temperature is 100 DEG C, acid
Solution is halogen hydracid, and the concentration of halogen hydracid is preferably 10mol/L.
In the step S3, after after the substrate cooling of previous step processing, quantum dot light emitting layer is deposited thereon, this quantum
The thickness of point luminescent layer is 30-50nm, such as 40nm, and this step can be not required to heating.The material of the quantum dot light emitting layer can
With in being red light quantum point, green light quantum point, blue light quantum point, gold-tinted quantum dot, infrared quantum point and ultraviolet light quantum dot
It is at least one or several.
In the step S4, electron transfer layer ETL is on quantum dot light emitting layer for deposition, and electron transfer layer thickness is preferably
Between 10-100nm, such as 50nm.After the completion of deposition, place a substrate on 150 DEG C of warm table and heat 30 minutes, remove residual
The solvent stayed.
Finally in the step S5, the substrate for having deposited each functional layer is placed in evaporation storehouse by mask plate hot evaporation
One layer of negative electrode, such as described negative electrode is 100nm argent or aluminium.So far, prepared by device completes.
The present invention also provides a kind of QLED preferred embodiments, as shown in Fig. 2 it includes the substrate containing hearth electrode 20 successively
10th, hole transmission layer 30, quantum dot light emitting layer 40, electron transfer layer 50 and top electrode 60, wherein, the hole transmission layer 30
Material is PEDOT:PSS, the PEDOT:PSS is obtained using method as described above processing.
Wherein, aforesaid substrate 10 can use ito substrate.
The thickness of the hole transmission layer 30 is 30-70nm, such as 50nm.
The thickness of the quantum dot light emitting layer 40 is 30-50nm, such as 40nm.The material of the quantum dot light emitting layer 40 can
With in being red light quantum point, green light quantum point, blue light quantum point, gold-tinted quantum dot, infrared quantum point and ultraviolet light quantum dot
It is at least one or several.
The thickness of the electron transfer layer 50 is preferably such as 50nm between 10-100nm.The electron transfer layer 50 is excellent
N-type zinc oxide of the choosing with high electronic transmission performance, its preferably thickness is 30-60nm（Such as 45nm）, the material of electron injecting layer 15
Material can select the metals such as Ca, Ba of low work function, can also select CsF, LiF, CsCO3Etc. compound, it can also be other
Electrolyte type electron transport layer materials.
The top electrode 60 is preferably argent or aluminium, and its thickness can be 100nm.
In summary, the present invention is to PEDOT:PSS is carried out after acid treatment, due to proton and X-The infiltration of ion so that
PEDOT:PSS is separated, and forms good exciton transfer passage so that PEDOT:PSS conductances are improved, with booster
The effect of part performance.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect scope.
Claims (10)
1. one kind handles PEDOT using acid solution:PSS method, it is characterised in that including step：
Making there is into PEDOT:PSS substrate is placed on warm table and heated, and acid solution is added dropwise, and acid solution is paved with PEDOT:
PSS surfaces, treat that surface is cooled down after being evaporated.
2. use acid solution according to claim 1 handles PEDOT:PSS method, it is characterised in that the temperature of heating
For 90 ~ 110 DEG C.
3. use acid solution according to claim 1 handles PEDOT:PSS method, it is characterised in that the acid solution
For halogen hydracid, hydrochloric acid or acetic acid.
4. use acid solution according to claim 1 handles PEDOT:PSS method, it is characterised in that the acid solution
Concentration be 1-20mol/L.
5. a kind of QLED preparation method, it is characterised in that including step：
A, in the substrate surface containing hearth electrode hole transmission layer is made, the material of the hole transmission layer is PEDOT:PSS；
B, substrate is placed on warm table and heated, and acid solution is added dropwise, acid solution is paved with PEDOT:PSS surfaces, treat that surface is steamed
Cooled down after dry；
C, hole transport layer surface deposition point luminescent layer；
D, quantum dot light emitting layer surface deposit electron transfer layer；
E, electric transmission layer surface make top electrode.
6. QLED according to claim 5 preparation method, it is characterised in that in the step B, the temperature of heating is 90
~110℃。
7. QLED according to claim 5 preparation method, it is characterised in that in the step B, the acid solution is halogen
Hydracid, hydrochloric acid or acetic acid.
8. QLED according to claim 5 preparation method, it is characterised in that in the step B, the acid solution it is dense
Spend for 1-20mol/L.
9. a kind of QLED, it is characterised in that successively including the substrate containing hearth electrode, hole transmission layer, quantum dot light emitting layer, electricity
Sub- transport layer and top electrode, wherein, the material of the hole transmission layer is PEDOT:PSS, the PEDOT:PSS uses such as right
It is required that the method processing described in 1 is obtained.
10. QLED according to claim 9, it is characterised in that the thickness of the hole transmission layer is 30-70nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611147004.8A CN107046107A (en) | 2016-12-13 | 2016-12-13 | Handle PEDOT:PSS method, QLED and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611147004.8A CN107046107A (en) | 2016-12-13 | 2016-12-13 | Handle PEDOT:PSS method, QLED and preparation method |
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| Publication Number | Publication Date |
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| CN107046107A true CN107046107A (en) | 2017-08-15 |
Family
ID=59543804
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611147004.8A Pending CN107046107A (en) | 2016-12-13 | 2016-12-13 | Handle PEDOT:PSS method, QLED and preparation method |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110041544A (en) * | 2019-05-10 | 2019-07-23 | 广东聚华印刷显示技术有限公司 | Handle method, light emitting diode with quantum dots and the display device of PEDOT-PSS |
| CN111628092A (en) * | 2019-02-28 | 2020-09-04 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
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| CN105552244A (en) * | 2016-02-17 | 2016-05-04 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method thereof as well as display device |
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2016
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Patent Citations (3)
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| CN105470387A (en) * | 2016-01-25 | 2016-04-06 | 深圳市华星光电技术有限公司 | Quantum dot light-emitting device and preparation method thereof and liquid crystal display device |
| CN105552244A (en) * | 2016-02-17 | 2016-05-04 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method thereof as well as display device |
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Non-Patent Citations (2)
| Title |
|---|
| XINKAI WU, ET AL: "A highly conductive PEDOT:PSS film with the dipping treatment by hydroiodic acid as anode for organic light emitting diode", 《ORGANIC ELECTRONICS》 * |
| YIJIE XIA AND JIANYONG OUYANG: "Significant Conductivity Enhancement of Conductive Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) Films through a Treatment with Organic Carboxylic Acids and Inorganic Acids", 《ACS APPL. MATER. INTERFACES》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111628092A (en) * | 2019-02-28 | 2020-09-04 | Tcl集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN111628092B (en) * | 2019-02-28 | 2022-01-18 | Tcl科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method thereof |
| CN110041544A (en) * | 2019-05-10 | 2019-07-23 | 广东聚华印刷显示技术有限公司 | Handle method, light emitting diode with quantum dots and the display device of PEDOT-PSS |
| CN110041544B (en) * | 2019-05-10 | 2022-07-29 | 广东聚华印刷显示技术有限公司 | Method for processing PEDOT-PSS, quantum dot light-emitting diode and display device |
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Application publication date: 20170815 |