CN107026106A - Substrate board treatment and substrate processing method using same - Google Patents

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method capable of removing foreign matter adhering to an upper surface of a peripheral wall portion of a cup. A substrate processing apparatus according to one aspect of the embodiment includes a holding unit, a processing liquid supply unit, a cup, and a cleaning liquid supply unit. The holding part holds the substrate. The processing liquid supply unit supplies the processing liquid to the substrate. The cup has a bottom, a cylindrical peripheral wall portion standing upright from the bottom, a liquid receiving portion provided above the peripheral wall portion to receive the processing liquid scattered from the substrate, and a liquid receiving portion formed on the upper surface of the peripheral wall portion along the circumferential direction. A groove portion, the cup enclosing the holding portion. The cleaning liquid supply unit supplies cleaning liquid to the upper surface of the peripheral wall portion.

Description

Substrate processing apparatus and substrate processing method

technical field

The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.

Background technique

Conventionally, there is known a substrate processing apparatus that performs various processes by supplying a predetermined processing liquid to substrates such as semiconductor wafers and glass substrates (see, for example, Patent Document 1).

In the substrate processing apparatus described above, for example, the processing liquid scattered from the substrate is received and discharged by a cup provided to surround the substrate. The cup includes, for example, a peripheral wall standing upright from the bottom and a liquid receiving portion provided on the upper surface of the peripheral wall to receive processing liquid scattered from the substrate, and the liquid receiving portion is configured to be movable relative to the peripheral wall.

prior art literature

patent documents

Patent Document 1: Japanese Patent Laid-Open No. 2013-089628

Contents of the invention

The problem to be solved by the invention

However, in the above-mentioned prior art, it is known that the treatment liquid atmosphere of the used treatment liquid and the scattered treatment liquid enter, for example, the gap between the liquid receiving part and the peripheral wall part, and the entered treatment liquid atmosphere, etc. are dried and Foreign matters such as crystals of the treatment liquid adhere to the upper surface of the peripheral wall portion of the cup.

An object of one aspect of the embodiment is to provide a substrate processing apparatus and a substrate processing method capable of removing foreign matter adhering to an upper surface of a peripheral wall portion of a cup.

solutions to problems

A substrate processing apparatus according to one aspect of the embodiment includes a holding unit, a processing liquid supply unit, a cup, and a cleaning liquid supply unit. The holding part holds the substrate. The processing liquid supply unit supplies a processing liquid to the substrate. The cup has: a bottom; a cylindrical peripheral wall portion erected from the bottom portion; a liquid receiving portion provided above the peripheral wall portion for receiving processing liquid scattered from the substrate; and a groove portion. , which is formed on the upper surface of the peripheral wall portion along the circumferential direction, and the cup-shaped piece surrounds the holding portion. The cleaning liquid supply unit supplies cleaning liquid to the upper surface of the peripheral wall portion.

The effect of the invention

According to one aspect of the embodiment, foreign matter adhering to the upper surface of the peripheral wall portion of the cup can be removed.

Description of drawings

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to a first embodiment.

FIG. 2 is a diagram showing a schematic configuration of a processing unit.

3 is a schematic cross-sectional view showing a specific configuration example of a processing unit.

Fig. 4 is a schematic plan view of a first peripheral wall portion.

FIG. 5 is a schematic cross-sectional view taken along line VV in FIG. 4 .

6A is a schematic cross-sectional view taken along the line VI-VI of FIG. 4 , and is a diagram showing a state of cleaning in a state in which the first liquid receiving part is lowered.

Fig. 6B is a diagram showing a state of cleaning in a state where the first liquid receiving part is raised.

7 is a flowchart showing a processing procedure of processing executed by the substrate processing system according to the first embodiment.

FIG. 8 is a flowchart showing an example of the processing procedure of the cleaning process of the first peripheral wall executed in the substrate processing system.

Fig. 9 is a schematic plan view of a first peripheral wall portion in a first modified example.

10 is an enlarged longitudinal sectional view showing the vicinity of the discharge port of the cleaning liquid supply pipe in a second modified example.

FIG. 11 is a graph showing an example of the relationship between the distance of the part to be cleaned from the discharge port and the flow rate of the cleaning liquid.

12A is a schematic cross-sectional view showing a first peripheral wall portion in a third modification.

12B is a schematic cross-sectional view showing a first peripheral wall portion in a fourth modification.

Fig. 13 is a schematic bottom view of the rear surface of the holding portion of the second embodiment.

Fig. 14A is a schematic bottom view showing an enlarged first fixing portion.

14B is a schematic bottom view showing a first fixing portion of a comparative example.

Fig. 15 is a sectional view taken along line XV-XV in Fig. 13 .

Fig. 16 is an enlarged schematic bottom view showing a second fixing portion.

Fig. 17 is a sectional view taken along line XVII-XVII in Fig. 13 .

Fig. 18 is a schematic plan view of a first peripheral wall portion in a third embodiment.

FIG. 19 is a schematic enlarged plan view of FIG. 18 .

Fig. 20 is a cross-sectional view taken along line XX-XX in Fig. 19 .

Fig. 21 is a schematic plan view of a first peripheral wall portion in a fourth embodiment.

FIG. 22 is a schematic enlarged plan view of FIG. 21 .

Fig. 23 is a sectional view taken along line XXIII-XXIII in Fig. 22 .

FIG. 24 is a flowchart showing another example of the processing procedure of cleaning processing.

Explanation of reference signs

1. Substrate processing system; 4. Control device; 16. Processing unit; 18. Control part; 30. Substrate holding mechanism; 31. Holding part; 40. Processing fluid supply part; 50. Recovery cup; 50a, first Cup; 50b, second cup; 50c, third cup; 53, bottom; 54a, first peripheral wall; 55a, first liquid receiving part; 56, first lifting mechanism; 56a, first Support member; 59, through hole; 70, processing fluid supply source; 101, first rotating cup; 102, second rotating cup.

detailed description

Hereinafter, embodiments of the substrate processing apparatus and the substrate processing method disclosed in the present application will be described in detail with reference to the drawings. In addition, this invention is not limited to embodiment shown below.

<1. Substrate processing system configuration>

(first embodiment)

FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is defined as a vertically upward direction.

As shown in FIG. 1 , a substrate processing system 1 has an input/output station 2 and a processing station 3 . The input and output station 2 and the processing station 3 are arranged adjacently.

The input/output station 2 has a carrier placement unit 11 and a transport unit 12 . A plurality of carriers C for accommodating a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state are placed on the carrier placement portion 11 .

The conveyance part 12 is provided adjacent to the carrier mounting part 11, and the board|substrate conveyance apparatus 13 and the transfer part 14 are provided in the inside. The substrate transfer device 13 has a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfers the wafer W between the carrier C and the transfer unit 14 using the wafer holding mechanism.

The processing station 3 is arranged adjacent to the transport section 12 . The processing station 3 has a transport section 15 and a plurality of processing units 16 . A plurality of processing units 16 are arranged side by side on both sides of the conveying unit 15 .

The transfer unit 15 is provided with a substrate transfer device 17 inside. The substrate transfer device 17 has a wafer holding mechanism for holding the wafer W. In addition, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and rotate around the vertical axis, and transfers the wafer W between the transfer unit 14 and the processing unit 16 using a wafer holding mechanism.

The processing unit 16 performs predetermined substrate processing on the wafer W conveyed by the substrate conveying device 17 .

In addition, the substrate processing system 1 has a control device 4 . The control device 4 is, for example, a computer, and has a control unit 18 and a storage unit 19 . Programs for controlling various processes executed in the substrate processing system 1 are stored in the storage unit 19 . The control unit 18 controls the operation of the substrate processing system 1 by reading and executing the program stored in the storage unit 19 .

In addition, this program is recorded in a computer-readable storage medium, and may be installed in the storage unit 19 of the control device 4 from the storage medium. As a computer-readable storage medium, there are, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the input/output station 2 takes out the wafer W from the carrier C placed on the carrier loading unit 11, and places the taken out wafer W on the carrier C. Placed on the transfer section 14. The wafer W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .

After the wafer W input to the processing unit 16 is processed by the processing unit 16 , it is carried out from the processing unit 16 by the substrate transfer device 17 and placed on the transfer unit 14 . Then, the processed wafer W placed on the delivery unit 14 is returned to the carrier C of the carrier placement unit 11 by the substrate transfer device 13 .

Next, a schematic configuration of the processing unit 16 of the substrate processing system 1 will be described with reference to FIG. 2 . FIG. 2 is a diagram showing a schematic configuration of the processing unit 16 .

As shown in FIG. 2 , the processing unit 16 has a chamber 20 , a substrate holding mechanism 30 , a processing fluid supply part 40 , and a recovery cup 50 .

The chamber 20 accommodates the substrate holding mechanism 30 , the processing fluid supply unit 40 , and the recovery cup 50 . An FFU (Fan Filter Unit, fan filter unit) 21 is provided on the top of the chamber 20 . The FFU 21 forms a downflow in the chamber 20 .

The substrate holding mechanism 30 has a holding portion 31 , a pillar portion 32 , and a driving portion 33 . The holding unit 31 holds the wafer W horizontally. The pillar portion 32 is a member extending in the vertical direction, the base end portion is rotatably supported by the driving portion 33 , and the holding portion 31 is horizontally supported at the distal end portion. The driving unit 33 rotates the support unit 32 around the vertical axis. In this substrate holding mechanism 30 , by rotating the support unit 32 using the drive unit 33 , the holding unit 31 supported by the support unit 32 is rotated, thereby rotating the wafer W held by the holding unit 31 .

The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The treatment fluid supply unit 40 is connected to a treatment fluid supply source 70 .

The recovery cup 50 is disposed so as to surround the holding unit 31 , and collects the processing liquid scattered from the wafer W due to the rotation of the holding unit 31 . A liquid discharge port 51 is formed at the bottom of the recovery cup 50 , and the processing liquid collected by the recovery cup 50 is discharged to the outside of the processing unit 16 through the liquid discharge port 51 . In addition, an exhaust port 52 for exhausting the gas supplied from the FFU 21 to the outside of the processing unit 16 is formed at the bottom of the recovery cup 50 .

<2. Specific configuration of the processing unit>

Next, the configuration of the processing unit 16 described above will be described more specifically with reference to FIG. 3 . FIG. 3 is a schematic cross-sectional view showing a specific configuration example of the processing unit 16 .

As shown in FIG. 3 , the FFU 21 is connected to an inert gas supply source 23 via a valve 22 . The FFU 21 ejects an inert gas such as N ₂ gas supplied from an inert gas supply source 23 into the chamber 20 as downflow gas. In this way, by using an inert gas as the downflow gas, oxidation of the wafer W can be prevented.

A holding member 311 for holding the wafer W from the side is provided on the upper surface of the holding portion 31 of the substrate holding mechanism 30 . The wafer W is held horizontally by the holding member 311 in a state slightly separated from the upper surface of the holding portion 31 .

The treatment fluid supply unit 40 includes a nozzle 41 , an arm 42 that supports the nozzle 41 horizontally, and a swivel lift mechanism 43 that swivels and lifts the arm 42 . The nozzle 41 is connected to one end of a pipe not shown, and the other end of the pipe is branched into a plurality of branches. Each end of the branched piping is connected to an alkali-based processing liquid supply source 70a, an acid-based processing liquid supply source 70b, an organic-based processing liquid supply source 70c, and a DIW supply source 70d. In addition, valves 60 a to 60 d are provided between the respective supply sources 70 a to 70 d and the nozzle 41 .

The processing fluid supply unit 40 supplies the alkali-based processing liquid, the acid-based processing liquid, the organic-based processing liquid, and DIW (pure water at normal temperature) supplied from the above-mentioned supply sources 70 a to 70 d to the surface of the wafer W from the nozzle 41 , Liquid processing is performed on the wafer W.

In addition, in the above description, the liquid treatment is performed on the surface of the wafer W, but the present invention is not limited thereto, and the liquid treatment may be performed on the back surface and the peripheral portion of the wafer W, for example. In addition, in this embodiment, the alkali-based treatment liquid, the acid-based treatment liquid, the organic-based treatment liquid, and DIW are supplied from one nozzle 41, but the treatment fluid supply unit 40 may have a plurality of nozzles corresponding to each treatment liquid. .

A first rotating cup 101 and a second rotating cup 102 that rotate integrally with the holding portion 31 are provided on the peripheral portion of the holding portion 31 . As shown in FIG. 3 , the second rotary cup 102 is disposed on the inner side of the first rotary cup 101 .

The first rotary cup 101 and the second rotary cup 102 are formed in an annular shape as a whole. When the first rotary cup 101 and the second rotary cup 102 rotate together with the holding unit 31 , the processing liquid scattered from the rotating wafer W is guided to the recovery cup 50 .

The recovery cup 50 includes a first cup 50 a , a second cup 50 b , and a third cup 50 c in order from the inner side near the rotation center of the wafer W held and rotated by the holding unit 31 . In addition, the recovery cup 50 is provided with a cylindrical inner wall portion 54d centering on the rotation center of the wafer W on the inner peripheral side of the first cup 50a.

The first to third cups 50 a to 50 c and the inner wall portion 54 d are provided on the bottom 53 of the recovery cup 50 . Specifically, the first cup 50a has a first peripheral wall portion 54a and a first liquid receiving portion 55a.

The 1st peripheral wall part 54a is erected from the bottom part 53, and is formed in cylindrical shape (for example, cylindrical shape). A space is formed between the first peripheral wall portion 54a and the inner wall portion 54d, and this space is used as a first liquid drainage tank 501a for collecting and discharging the treatment liquid and the like. The first liquid receiving portion 55a is provided above the upper surface 54a1 of the first peripheral wall portion 54a.

Moreover, the 1st cup 50a has the 1st elevating mechanism 56, and is comprised so that it can raise and lower by this 1st elevating mechanism 56. As shown in FIG. Specifically, the first lift mechanism 56 has a first support member 56a and a first lift drive unit 56b.

The 1st support member 56a is a multiple (for example, three. Only one is shown in FIG. 3) vertically elongated members. The first support member 56a is movably inserted through a through hole formed in the first peripheral wall portion 54a. In addition, although a cylindrical rod can be used as the 1st supporting member 56a, for example, it is not limited to this.

The first supporting member 56a is positioned such that its upper end is exposed from the upper surface 54a1 of the first peripheral wall portion 54a, and is connected to the lower surface of the first liquid receiving portion 55a to support the first liquid receiving portion 55a from below. On the other hand, the lower end of the 1st support member 56a is connected to the 1st elevation drive part 56b.

The first lift drive unit 56b lifts the first support member 56a in, for example, the Z-axis direction, whereby the first support member 56a lifts the first liquid receiving portion 55a relative to the first peripheral wall portion 54a. In addition, an air cylinder can be used as the 1st elevation drive part 56b. Moreover, the 1st elevation drive part 56b is controlled by the control apparatus 4. As shown in FIG.

The first liquid receiving unit 55a driven by the first lift driving unit 56b moves between a processing position for receiving the processing liquid scattered from the rotating wafer W and a retreat position for retracting from the processing position to the lower side.

Specifically, when the first liquid receiving part 55a is at the treatment position, an opening is formed inside the upper end of the first liquid receiving part 55a, and a flow path leading from the opening to the first liquid drainage tank 501a is formed.

On the other hand, as shown in FIG. 3 , the inner wall portion 54 d has an extended portion 54 d 1 extending so as to be inclined toward the peripheral edge portion of the holding portion 31 . When the first liquid receiving portion 55a is in the withdrawn position, it abuts against the extended portion 54d1 of the inner wall portion 54d, the opening inside the upper end is closed, and the flow path leading to the first liquid drainage groove 501a is closed.

The second cup 50b has the same configuration as the first cup 50a. Specifically, the second cup 50b has a second peripheral wall portion 54b, a second liquid receiving portion 55b, and a second elevating mechanism 57, and the second cup 50b is disposed on the first cup adjacent to the first cup 50a. The first peripheral wall portion 54a side of the cup 50a.

The 2nd peripheral wall part 54b is erected at the position of the outer peripheral side of the 1st peripheral wall part 54a of the bottom part 53, and is formed in cylindrical shape. In addition, a space formed between the second peripheral wall portion 54b and the first peripheral wall portion 54a is used as a second liquid drainage tank 501b for collecting and discharging the processing liquid and the like.

The second liquid receiving portion 55b is located on the outer peripheral side of the first liquid receiving portion 55a and is provided above the upper surface 54b1 of the second peripheral wall portion 54b.

The second elevating mechanism 57 has a second support member 57a and a second elevating drive unit 57b. The second supporting member 57a is a plurality of (for example, three; only one is shown in FIG. 3 ) elongated members, and is movably inserted through a through hole formed in the second peripheral wall portion 54b. In addition, although a cylindrical rod can be used as the 2nd support member 57a, for example, it is not limited to this.

The second support member 57a is positioned such that its upper end is exposed from the upper surface 54b1 of the second peripheral wall portion 54b, and is connected to the lower surface of the second liquid receiving portion 55b to support the second liquid receiving portion 55b from below. Moreover, the upper surface 54b1 of the 2nd peripheral wall part 54b is positioned so that it may be located below the upper surface 54a1 of the 1st peripheral wall part 54a in the vertical direction.

The lower end of the 2nd support member 57a is connected to the 2nd elevation drive part 57b. The 2nd elevation drive part 57b raises and lowers the 2nd support member 57a along Z-axis direction, for example. Thereby, the second support member 57a raises and lowers the second liquid receiving part 55b with respect to the second peripheral wall part 54b.

In addition, an air cylinder can be used as the 2nd elevation drive part 57b. Moreover, the 2nd elevation drive part 57b is also controlled by the control apparatus 4. As shown in FIG.

In addition, the second liquid receiving part 55b also moves between the treatment position and the withdrawn position. Specifically, when the second liquid receiving part 55b is located at the treatment position and the first liquid receiving part 55a is located at the withdrawn position, an opening is formed inside the upper end of the second liquid receiving part 55b to form a channel leading from the opening to the second liquid discharge. The flow path of the tank 501b.

On the other hand, as shown in FIG. 3 , when the second liquid receiving part 55b is in the retracted position, it abuts against the first liquid receiving part 55a, and the opening inside the upper end is closed and the flow path leading to the second liquid drainage groove 501b is closed. . In addition, in the above description, the second liquid receiving part 55b at the retracted position is in contact with the first liquid receiving part 55a, but the present invention is not limited to this, and the opening inside the upper end may be closed by contacting, for example, the inner wall part 54d.

The third cup 50c has a third peripheral wall portion 54c and a third liquid receiving portion 55c, and is disposed adjacent to the second cup 50b on the opposite side to the first cup 50a. The 3rd peripheral wall part 54c is erected at the position of the outer peripheral side of the 2nd peripheral wall part 54b of the bottom part 53, and is formed in cylindrical shape. Furthermore, the space between the third peripheral wall portion 54c and the second peripheral wall portion 54b is used as a third liquid drainage tank 501c for collecting and discharging the treatment liquid and the like.

The third liquid receiving portion 55c is formed continuously from the upper end of the third peripheral wall portion 54c. The third liquid receiving part 55c is formed to surround the wafer W held by the holding part 31 and extend above the first liquid receiving part 55a and the second liquid receiving part 55b.

As shown in Figure 3, when the first liquid receiving part 55a and the second liquid receiving part 55b are both in the retracted position, the third liquid receiving part 55c forms an opening inside the upper end of the third liquid receiving part 55c, forming a passage through the opening. Flow path to the third drain tank 501c.

On the other hand, when the second liquid receiving part 55b is located at the raised position, or when both the first liquid receiving part 55a and the second liquid receiving part 55b are located at the raised position, the third liquid The receiving part 55c is in contact with the second liquid receiving part 55b, the opening inside the upper end is closed, and the flow path leading to the third liquid drainage groove 501c is closed.

In the part of the bottom 53 corresponding to the above-mentioned first cup 50a to the third cup 50c, more precisely, in the part of the bottom 53 corresponding to the first drain groove 501a to the third drain groove 501c , drain ports 51 a to 51 c are formed at intervals along the circumferential direction of the recovery cup 50 .

Here, it is assumed that the treatment liquid discharged from the liquid discharge port 51a is an acid-based treatment liquid, the treatment liquid discharged from the liquid discharge port 51b is an alkali-based treatment liquid, and the treatment liquid discharged from the liquid discharge port 51c is an organic-based treatment liquid. Take this as an example. In addition, the types of the treatment liquid discharged from the above-mentioned respective liquid discharge ports 51a to 51c are merely examples and are not limited.

The drain port 51a is connected to the drain pipe 91a. The discharge pipe 91a is provided with a valve 62a in the middle, and branches into a first discharge pipe 91a1 and a second discharge pipe 91a2 at the position of the valve 62a. In addition, as the valve 62a, for example, a three-way valve switchable between a valve closing position, a position opening the discharge path to the first discharge pipe 91a1 side, and a position opening to the second discharge pipe 91a2 side can be used.

In the case where the above-mentioned acid-based treatment liquid can be reused, the first drain pipe 91a1 is connected to the acid-based treatment liquid supply source 70b (for example, a tank for storing the acid-based treatment liquid), and the drain is returned to the acid-based treatment liquid supply source. 70b. That is, the first drain pipe 91a1 functions as a circulation line. In addition, the second discharge pipe 91a2 will be discussed later.

The drain port 51b is connected to the drain pipe 91b. A valve 62b is provided in the middle of the drain pipe 91b. In addition, the drain port 51c is connected to the drain pipe 91c. A valve 62c is provided in the middle of the drain pipe 91c. Furthermore, the valves 62b, 62c are controlled by the control device 4 .

Furthermore, when the processing unit 16 performs substrate processing, the first liquid receiving part 55a of the first cup-shaped member 50a and the second liquid receiving part of the second cup-shaped member 50b are adjusted according to the type of processing liquid used in each processing in the substrate processing. The liquid receiving part 55b moves up and down to switch the liquid discharge ports 51a to 51c.

When processing the wafer W by discharging, for example, an acid-based processing liquid onto the wafer W, the control device 4 controls the driving unit 33 of the substrate holding mechanism 30 so that the holding unit 31 rotates at a predetermined rotation speed. Open the valve 60b in the state.

At this time, the control device 4 raises the first cup 50a in advance. That is, the control device 4 raises the first supporting member 56a and the second supporting member 57a by means of the first lifting drive part 56b and the second lifting driving part 57b, and the first liquid receiving part 55a is raised to the processing position, thereby forming a position in advance from the first lifting drive part 56b to the second lifting drive part 57b. 1 The opening inside the upper end of the liquid receiving portion 55a leads to the flow path of the first liquid drainage tank 501a. As a result, the acid-based processing liquid supplied to the wafer W flows downward and flows into the first liquid drain tank 501a.

In addition, the control device 4 controls the valve 62a in advance to open the discharge path to the first liquid discharge pipe 91a1 side. Thus, the acid-based treatment liquid that has flowed into the first drain tank 501a returns to the acid-based treatment liquid supply source 70b through the drain pipe 91a and the first drain pipe 91a1. Then, the acid-based processing liquid returned to the acid-based processing liquid supply source 70b is supplied to the wafer W again. In this way, the first cup 50 a is connected to a circulation line for circulating the recovered acid-based processing liquid and supplying it to the wafer W again.

In addition, when processing the wafer W by discharging, for example, an alkali-based processing liquid onto the wafer W, the control device 4 controls the drive unit 33 in the same manner to rotate the holding unit 31 at a predetermined rotation speed. Open valve 60a.

At this time, the control device 4 raises only the second cup 50b in advance. That is, the control device 4 raises the second support member 57a by means of the second lifting drive part 57b, and the second liquid receiving part 55b rises to the treatment position, thereby forming in advance the opening leading to the second liquid receiving part 55b from the opening inside the upper end of the second liquid receiving part 55b. 2 The flow path of the drain tank 501b. In addition, the first cup 50a descends here. As a result, the alkali-based processing liquid supplied to the wafer W flows downward and flows into the second liquid drain tank 501b.

In addition, the control device 4 opens the valve 62b in advance. Accordingly, the alkali-based treatment liquid in the second liquid discharge tank 501b is discharged to the outside of the processing unit 16 through the liquid discharge pipe 91b. In this manner, the drain pipe 91 b functions as a drain line for discharging the recovered second processing liquid to the outside of the processing unit 16 . That is, the second cup 50b is connected to the drain line.

In addition, when processing the wafer W by discharging, for example, an organic processing liquid onto the wafer W, the control device 4 controls the drive unit 33 in the same manner to rotate the holding unit 31 at a predetermined rotation speed. Open valve 60c.

At this time, the control device 4 lowers the first cup 50a and the second cup 50b in advance (see FIG. 3 ). That is, the control device 4 lowers the first support member 56a and the second support member 57a via the first lifting drive unit 56b and the second lift drive unit 57b, and lowers the first liquid receiving unit 55a and the second liquid receiving unit 55b to the retracted position. Location. In this way, a flow path leading from the opening inside the upper end of the third liquid receiving portion 55c to the third drain groove 501c is formed in advance. As a result, the organic processing liquid supplied to the wafer W flows downward and flows into the third liquid drain tank 501c.

In addition, since the control device 4 opens the valve 62c in advance, the organic-based processing liquid in the third liquid drain tank 501c is discharged to the outside of the processing unit 16 through the liquid drain pipe 91c. In this way, the third cup 50c is also connected to a drain line (for example, a drain pipe 91c ) that discharges the collected third treatment liquid to the outside of the treatment unit 16 .

In addition, the discharge paths of the above-mentioned acid-based treatment liquid, alkali-based treatment liquid, organic-based treatment liquid, and cleaning liquid are illustrative and not limiting. That is, for example, each of the discharge ports 51a to 51c may be connected to one discharge pipe, and a plurality of valves corresponding to the properties of the treatment liquid such as acidity and alkalinity may be provided in one discharge pipe, and from the valves The location makes the discharge path branch.

Moreover, the drain pipe 91b is connected to the drain pipe 92a which communicates with the through-hole which penetrated the 1st support member 56a in the 1st peripheral wall part 54a. The drain pipe 92a discharges the cleaning liquid (discussed later) etc. that entered the through hole of the first peripheral wall portion 54a, and the cleaning liquid is discharged to the outside of the processing unit 16 through the drain pipe 91b.

Moreover, the drain pipe 91c is also connected to the drain pipe 92b which communicates with the through-hole which penetrated the 2nd support member 57a in the 2nd peripheral wall part 54b. The drain pipe 92b discharges the cleaning liquid or the like that has entered the through hole of the second peripheral wall portion 54b, and the cleaning liquid is discharged to the outside of the processing unit 16 through the drain pipe 91c.

Exhaust ports 52a, 52b, and 52c are formed in the bottom portion 53, the first peripheral wall portion 54a, and the second peripheral wall portion 54b of the recovery cup 50, respectively. In addition, the exhaust ports 52a, 52b, and 52c are connected to one exhaust pipe which is branched into a first exhaust pipe 93a to a third exhaust pipe 93c on the downstream side of the exhaust gas. Moreover, the valve 64a is provided in the 1st exhaust pipe 93a, the valve 64b is provided in the 2nd exhaust pipe 93b, and the valve 64c is provided in the 3rd exhaust pipe 93c.

The first exhaust pipe 93a is an exhaust pipe for acidic exhaust, the second exhaust pipe 93b is an exhaust pipe for alkaline exhaust, and the third exhaust pipe 93c is an exhaust pipe for organic exhaust. Tube. These are switched by the control device 4 according to each processing of the substrate processing.

For example, when processing to generate acidic exhaust gas is performed, the controller 4 switches to the first exhaust pipe 93a, and the acidic exhaust gas is discharged through the valve 64a. Similarly, in the case of processing to generate alkaline exhaust gas, switching to the second exhaust pipe 93b is performed by the control device 4, and alkaline exhaust gas is discharged through the valve 64b. In addition, in the case of processing where organic exhaust gas is generated, switching to the third exhaust pipe 93c is performed by the control device 4, and the organic exhaust gas is discharged through the valve 64c.

Hereinafter, in this embodiment, BHF (a mixed solution of hydrofluoric acid and an ammonium fluoride solution (buffered hydrofluoric acid)) is used as the acid-based treatment solution. In addition, SC1 (a mixed solution of ammonia, hydrogen peroxide, and water) was used as an alkaline treatment solution, and IPA (isopropyl alcohol) was used as an organic treatment solution. In addition, the types of acid-based treatment liquid, alkali-based treatment liquid, and organic-based treatment liquid are not limited to these.

However, it can be seen that if BHF is used in the processing unit 16, the processing liquid atmosphere of BHF and the scattered BHF enter, for example, the gap between the first liquid receiving part 55a and the first peripheral wall part 54a, and the atmosphere of the entered BHF After drying, foreign substances such as crystals of BHF adhere to the upper surface 54a1 of the first peripheral wall portion 54a. In addition, the above-mentioned foreign substances are not limited to BHF, and may adhere to other types of treatment liquids.

Therefore, in the processing unit 16 of the present embodiment, the structure is such that the cleaning liquid is supplied to the upper surface 54a1 of the first peripheral wall portion 54a of the first cup 50a. Thereby, foreign substances such as crystals adhering to the upper surface 54a1 of the first peripheral wall portion 54a can be removed.

<3. Specific structure of the cleaning liquid supply part and the first peripheral wall part>

Hereinafter, the configuration for supplying the cleaning liquid to the upper surface 54a1 of the first peripheral wall portion 54a will be described in detail with reference to FIG. 4 and subsequent drawings. FIG. 4 is a schematic plan view of the first peripheral wall portion 54a viewed from above the Z-axis. In addition, FIG. 5 is a schematic cross-sectional view taken along line VV in FIG. 4 . In addition, in FIG. 5, the 1st liquid receiving part 55a provided in the upper surface 54a1 of the 1st peripheral wall part 54a is shown with the imaginary line for easy understanding.

As shown in FIG. 5 , the cleaning liquid supply unit 80 of the processing unit 16 further includes a cleaning liquid supply pipe 84c and a valve 85c. One end of the cleaning liquid supply pipe 84c is connected to the cleaning liquid supply source 83, and the other end is formed with a cleaning liquid discharge port 85 (hereinafter sometimes described as "discharge port 85").

In addition, as shown in FIGS. 4 and 5 , the first peripheral wall portion 54 a has a groove portion 58 . Specifically, the groove portion 58 is formed on the inner peripheral side of the upper surface 54a1 of the first peripheral wall portion 54a, and is formed on the upper surface 54a1 along the circumferential direction. More specifically, the groove portion 58 is formed to have an annular shape in plan view. In addition, the position where the groove part 58 is formed in the upper surface 54a1 of the 1st peripheral wall part 54a can be changed suitably, and may be formed close to the outer peripheral side of the upper surface 54a1, for example.

The discharge ports 85 of the above-mentioned cleaning liquid supply pipe 84c are formed in plural (for example, three) in the upper surface 54a1 of the first peripheral wall portion 54a, for example, in the groove portion 58 . In addition, the ejection ports 85 are arranged at substantially equal intervals in the circumferential direction around the rotation center C of the holding portion 31 . In addition, the number of objects and arrangement|positioning position of the said discharge port 85 are an illustration, and are not restrictive.

As shown in FIG. 5 , the valve 85c is provided in the cleaning liquid supply pipe 84c and is controlled by the control device 4 . Therefore, the control device 4 opens the valve 85c when cleaning the upper surface 54a1 of the first peripheral wall portion 54a. Accordingly, the cleaning liquid from the cleaning liquid supply source 83 is discharged from the discharge port 85 through the valve 85c and the cleaning liquid supply pipe 84c.

The cleaning liquid supplied from the cleaning liquid supply unit 80 , more specifically, the cleaning liquid ejected from the discharge port 85 flows in the groove portion 58 and overflows from the groove portion 58 . And the cleaning liquid overflowing from the groove part 58 is supplied over the whole upper surface 54a1 of the 1st peripheral wall part 54a, and the upper surface 54a1 is cleaned and foreign matter is removed. In addition, after cleaning the upper surface 54a1, the cleaning liquid also flows into the side surface 54a2 of the first peripheral wall portion 54a, the exhaust port 52b, etc. to clean and remove the attached foreign matter.

In this way, the first peripheral wall portion 54a is provided with the groove portion 58 formed along the circumferential direction, so the cleaning liquid can be supplied over a wide range of the upper surface 54a1 through the groove portion 58, and thus the upper surface can be cleaned efficiently. Surface 54a1. In addition, since the discharge port 85 is formed in the groove portion 58 , the cleaning liquid can be reliably supplied and flowed into the groove portion 58 .

In addition, as shown in FIG. 5 , the cleaning process may be performed in a state where the first liquid receiving part 55 a is moved to the retracted position. That is, the cleaning liquid supply part 80 may supply the cleaning liquid in a state where the first liquid receiving part 55a is moved to a retracted position below the processing position.

As a result, the lower surface 55a1 of the first liquid receiving portion 55a approaches the upper surface 54a1 of the first peripheral wall portion 54a, and therefore, the cleaning liquid flowing on the upper surface 54a1 is also supplied to the lower surface 55a1 of the first liquid receiving portion 55a. Therefore, It is also possible to clean the lower surface 55a1 to remove foreign substances.

In addition, the cleaning liquid supply part 80 may change the flow rate of the cleaning liquid when cleaning the upper surface 54a1 of the first peripheral wall part 54a and when cleaning the lower surface 55a1 of the first liquid receiving part 55a. For example, the cleaning liquid supply part 80 may compare the flow rate of the cleaning liquid when cleaning the lower surface 55a1 of the first liquid receiving part 55a with the flow rate of the cleaning liquid when cleaning the upper surface 54a1 of the first peripheral wall part 54a. Increase. Accordingly, the cleaning liquid can reliably reach the lower surface 55a1 of the first liquid receiving portion 55a, and thus the lower surface 55a1 can be efficiently cleaned.

In addition, the cleaning process may be performed in a state in which the holding part 31 and the first rotating cup 101 and the second rotating cup 102 are rotating. That is, the cleaning liquid supply part 80 may supply the cleaning liquid to the upper surface 54a1 of the first peripheral wall part 54a in a state in which the holding part 31 etc. are rotated.

Accordingly, in the recovery cup 50 , a swirling flow is generated by the rotation of the holding portion 31 and the first and second rotary cups 101 , 102 . This swirling flow acts on the cleaning liquid ejected from the discharge port 85, so that the cleaning liquid flows in a direction along the circumferential direction (right-handed direction (clockwise direction) in FIG. 4 ) on the upper surface 54a1 of the first peripheral wall portion 54a. ) flow, and can increase the flow rate of the cleaning fluid. Thereby, the cleaning liquid spreads over a wider range on the upper surface 54a1, so that the upper surface 54a1 can be efficiently cleaned.

FIG. 6A is a schematic cross-sectional view taken along line VI-VI of FIG. 4 , and is a diagram showing a state of cleaning in a state in which the first liquid receiving part 55 a is lowered. In addition, FIG. 6B is a diagram showing a state of cleaning in a state where the first liquid receiving part 55a is raised. In addition, in the present embodiment, washing can be performed in two states, namely, a state in which the first liquid receiving part 55a has been raised and a state in which it has been lowered, which will be described later.

As shown in FIGS. 6A and 6B , the through hole 59 through which the first support member 56 a is inserted is formed in the first peripheral wall portion 54 a as described above. The through hole 59 has an opening 59a formed in the upper surface 54a1 of the first peripheral wall 54a.

Furthermore, as shown in FIG. 4 , the opening 59 a of the through hole 59 according to the present embodiment is formed so as to overlap at least a part of the groove 58 in plan view. Accordingly, the cleaning liquid supply unit 80 supplies the cleaning liquid from the groove portion 58 on the upper surface 54a1 of the first peripheral wall portion 54a to the through hole 59 through the opening portion 59a.

Thereby, as shown in FIGS. 6A and 6B , the outer periphery of the first support member 56a and the through hole 59 can be cleaned, and foreign matter adhering to the outer periphery of the first support member 56a and the through hole 59 can be removed. In addition, the cleaning liquid that has flowed into the through hole 59 is discharged to the outside of the processing unit 16 through the drain pipe 92 a and the valve 62 b.

<4. Specific operation of the substrate processing system>

Next, the content of the substrate processing performed by the substrate processing system 1 of the present embodiment will be described with reference to FIG. 7 .

FIG. 7 is a flowchart showing a processing procedure of processing executed by the substrate processing system 1 of the present embodiment. In addition, each processing procedure shown in FIG. 7 is executed under the control of the control unit 18 of the control device 4 .

As shown in FIG. 7 , in the processing unit 16 , first, an input process of the wafer W is performed (step S1 ). In this input process, after the wafer W is placed on the holding unit 31 by the substrate transfer device 17 (see FIG. 1 ), the wafer W is held by the holding unit 31 .

Next, in the processing unit 16, the first chemical solution processing is performed (step S2). In the first chemical solution processing, the control unit 18 first rotates the holding unit 31 by the driving unit 33 to rotate the wafer W. Next, the control unit 18 opens the valve 60 a for a predetermined time to supply SC1 from the nozzle 41 to the surface of the wafer W. Thus, the surface of wafer W is processed by SC1.

Next, in the processing unit 16, the first flushing process is performed (step S3). In this first rinse process, the control unit 18 opens the valve 60 d for a predetermined time to supply DIW from the nozzle 41 to the wafer W. As a result, the SC1 remaining on the wafer W is washed away by the DIW.

Next, in the processing unit 16, the second chemical solution processing is performed (step S4). In this second chemical solution processing, the control unit 18 opens the valve 60 b for a predetermined time, and supplies BHF from the nozzle 41 to the surface of the wafer W. Thus, the surface of wafer W is BHF-processed.

Next, in the processing unit 16, the second flushing process is performed (step S5). In the second rinse process, the control unit 18 opens the valve 60 d for a predetermined time to supply DIW from the nozzle 41 to the surface of the wafer W. As a result, the BHF remaining on the wafer W is washed away by the DIW.

Next, in the processing unit 16, drying processing is performed (step S6). In this drying process, the control unit 18 opens the valve 60 c for a predetermined time, and supplies IPA from the nozzle 41 to the surface of the wafer W. Thereby, DIW remaining on the surface of wafer W is replaced with IPA whose volatility is higher than that of DIW. Thereafter, the IPA on the wafer W is shaken off to dry the wafer W.

Next, in the processing unit 16, output processing is performed (step S7). In this unloading process, after the control unit 18 stops the rotation of the wafer W by the drive unit 33 , the wafer W is unloaded from the processing unit 16 by the substrate transfer device 17 (see FIG. 1 ). When the output processing is completed, a series of substrate processing for one wafer W is completed.

Next, in the processing unit 16, a cleaning process of cleaning the upper surface 54a1 of the first peripheral wall portion 54a is performed (step S8). In addition, this cleaning process does not need to be performed every time one wafer W is delivered. That is, the timing at which the cleaning process is performed can be set arbitrarily, and, for example, the cleaning process may be performed once after substrate processing is performed on a plurality of wafers W. In addition, the above-mentioned cleaning of the substrate holding mechanism 30 may be performed during the process of step S8.

The cleaning process of the first peripheral wall portion 54a will be described with reference to FIG. 8 . FIG. 8 is a flowchart showing an example of the processing procedure of the cleaning process of the first peripheral wall portion 54 a executed in the substrate processing system 1 .

The control part 18 of the control apparatus 4 raises the 1st support member 56a by the 1st elevation drive part 56b, and raises the 1st liquid receiving part 55a (step S10. Refer FIG. 6B). Next, the control part 18 opens the valve 85c of the cleaning liquid supply part 80, and supplies cleaning liquid to the upper surface 54a1 of the 1st peripheral wall part 54a (step S11).

Next, when a predetermined time has elapsed since the supply of the cleaning liquid, the control unit 18 lowers the first supporting member 56a by using the first lifting drive unit 56b, and moves the first liquid receiving unit 55a to the retracted position (step S12. Refer to FIG. 6A ).

In this way, the lower surface 55a1 of the first liquid receiving part 55a can also be cleaned by placing the first liquid receiving part 55a at the withdrawn position. In addition, by raising and lowering the first liquid receiving part 55a during the cleaning process, the first support member 56a moves in the through-hole 59 filled with the cleaning liquid, so that the liquid attached to the outer periphery of the first support member 56a can be efficiently removed. foreign body removal. In addition, the lifting and lowering operation of the first liquid receiving part 55a described above may be repeated a plurality of times.

Next, when a predetermined time has elapsed since the first liquid receiving part 55a was lowered, the control part 18 closes the valve 85c of the cleaning liquid supply part 80 to stop the supply of the cleaning liquid to the upper surface 54a1 of the first peripheral wall part 54a ( Step S13). Thereby, the cleaning process of the 1st peripheral wall part 54a is completed.

In addition, the control unit 18 may perform the washing process while the holding unit 31 and the first rotating cup 101 and the second rotating cup 102 are being rotated. The swirling flow is generated by rotating the holding part 31 and the like, and the washing liquid spreads over a wide range on the upper surface 54a1 as described above.

As described above, the processing unit 16 of the first embodiment (corresponding to an example of a "substrate processing apparatus") includes a holding unit 31, a processing fluid supply part 40 (corresponding to an example of a "processing liquid supply part"), a recovery cup The shape member 50 and the cleaning liquid supply part 80. The holding unit 31 holds the wafer W. The processing fluid supply unit 40 supplies the processing liquid to the wafer W.

The first cup 50a of the recovery cup 50 has: a bottom 53; a cylindrical first peripheral wall 54a standing upright from the bottom 53; The first liquid receiving part 55a of the treatment liquid; the groove part 58 formed on the upper surface of the first peripheral wall part 54a along the circumferential direction, and the first cup part 50a of the recovery cup part 50 surrounds the holding part 31. The cleaning liquid supply part 80 supplies cleaning liquid to the upper surface 54a1 of the 1st peripheral wall part 54a. Thereby, the foreign matter adhering to the upper surface 54a1 of the 1st peripheral wall part 54a can be removed.

＜5. Modifications＞

Next, a first to a fourth modification of the processing unit 16 of the first embodiment will be described. In the processing unit 16 in the first modified example, the shape of the annular groove portion 58 in the first embodiment is changed.

Fig. 9 is a schematic plan view of the first peripheral wall portion 54a in the first modified example viewed from above the Z-axis. As shown in FIG. 9, in the first modified example, the groove portion 58 is divided into a plurality (three in the example of FIG. 9 ), and the divided groove portion 58 is formed in the first peripheral wall portion 54a along the circumferential direction. The upper surface 54a1.

In addition, the discharge ports 85 for the above-mentioned cleaning liquid are formed in the divided groove portions 58 , respectively. In addition, the position where the discharge port 85 is formed is preferably, for example, near the end portion on the upstream side in the flow direction of the cleaning liquid in the groove portion 58 . As a result, the cleaning liquid can flow from the end of the groove portion 58, and therefore, the cleaning liquid overflowing from the groove portion 58 while flowing in the groove portion 58 spreads over a wide range on the upper surface 54a1, enabling efficient cleaning. Upper surface 54a1. In addition, the position where the discharge port 85 is formed in the groove part 58 is not limited to the said position.

Next, a second modified example will be described. In the processing unit 16 of the second modified example, the direction of the discharge port 85 of the cleaning liquid supply unit 80 is changed. FIG. 10 is an enlarged longitudinal sectional view showing the vicinity of the discharge port 85 of the cleaning liquid supply pipe 84c in the second modified example.

As shown in FIG. 10 , in the second modified example, the discharge port 85 is connected to a cleaning liquid supply path 84c1 through which the cleaning liquid supplied from the cleaning liquid supply pipe 84c flows. The cleaning liquid supply path 84c1 is configured to be inclined along the circumferential direction of the first peripheral wall portion 54a (in FIG. 10 , the horizontal direction on the paper), and the discharge direction of the discharge port 85 is inclined with respect to the Z-axis direction. In other words, the cleaning liquid supply path 84c1 is configured so that the discharge direction of the cleaning liquid from the discharge port 85 faces one direction along the circumferential direction on the upper surface 54a1 of the first peripheral wall portion 54a. In addition, the "one direction" here refers to the same direction as the direction of the force acting on the washing liquid due to the swirling flow of the first rotating cup 101 and the second rotating cup 102, that is, the direction in FIG. Clockwise direction.

Thereby, regardless of whether there is a swirling flow, the cleaning liquid can be caused to flow in one direction along the circumferential direction on the upper surface 54a1 of the first peripheral wall portion 54a, and therefore, the cleaning liquid can be caused to flow over a wider range on the upper surface 54a1. Diffusion and efficient cleaning are performed.

In addition, in the processing unit 16, the flow rate of the cleaning liquid ejected from the discharge port 85 of the cleaning liquid supply part 80 may be changed according to the portion to be cleaned on the upper surface 54a1 of the first peripheral wall portion 54a.

FIG. 11 is a graph showing an example of the relationship between the distance of the portion to be cleaned from the discharge port 85 and the flow rate of the cleaning liquid. As shown in FIG. 11 , when the distance from the discharge port 85 to the cleaning site is relatively short, that is, when cleaning, for example, the vicinity of the discharge port 85 , the flow rate A of the cleaning liquid is set to a relatively low value. Thereby, a relatively large amount of cleaning liquid is supplied to the vicinity of the discharge port 85, and the vicinity of the discharge port 85 can be efficiently cleaned.

On the other hand, when the distance from the discharge port 85 to the cleaning site is relatively long, that is, when cleaning, for example, the vicinity of the first support member 56a relatively far from the discharge port 85, the flow rate B of the cleaning liquid is set to be higher than The value is high in the case of the vicinity of the cleaning discharge port 85 . Thereby, a relatively large amount of cleaning liquid is supplied to, for example, the vicinity of the first support member 56a, and the vicinity of the first support member 56a can be efficiently cleaned.

In this way, by changing the flow rate of the cleaning liquid sprayed from the discharge port 85 according to the site to be cleaned on the upper surface 54a1 of the first peripheral wall portion 54a, local cleaning can be performed on the upper surface 54a1.

In addition, in the example shown in FIG. 11, the flow rate of the cleaning liquid is continuously increased as the distance from the discharge port 85 to the cleaning site becomes longer, but this is an illustration and not a limitation. That is, the method of increasing the flow rate of the cleaning liquid can be arbitrarily changed, for example, by increasing the flow rate of the cleaning liquid stepwise (stepwise).

Next, a third modified example will be described. Fig. 12A is a schematic cross-sectional view showing a first peripheral wall portion 54a in a third modified example.

As shown in FIG. 12A , the first peripheral wall portion 54a in the third modification has an inclined portion 54a3. The inclined portion 54 a 3 is formed on the upper surface 54 a 1 and is formed to be inclined downward toward the groove portion 58 . Accordingly, even if, for example, the cleaning liquid A remains on the upper surface 54a1 after the cleaning process, the remaining cleaning liquid A flows into the cleaning liquid supply pipe 84c along the inclined portion 54a3.

In this way, in the third modified example, by providing the inclined portion 54a3, the remaining cleaning liquid A hardly stays on the upper surface 54a1. Thereby, in the substrate processing performed after the cleaning process, it is possible to suppress the decrease in the concentration of the processing liquid.

That is, for example, if the cleaning solution A remains on the upper surface 54a1, the cleaning solution A may be mixed into the processing solution during the substrate processing after the cleaning treatment, and the concentration of the processing solution may decrease. However, in the third modified example, by providing the above-described inclined portion 54a3, it is possible to suppress a decrease in the concentration of the processing liquid.

Next, a fourth modified example will be described. In the third modified example described above, the inclined portion 54 a 3 is formed to be inclined downward toward the groove portion 58 , but the shape of the inclined portion is not limited thereto. Fig. 12B is a schematic cross-sectional view showing the first peripheral wall portion 54a in the fourth modification.

As shown in FIG. 12B , the inclined portion 54a4 of the fourth modification is formed on the upper surface 54a1 of the first peripheral wall portion 54a and is formed to slope downward toward the side surface 54a2 of the first peripheral wall portion 54a.

Thereby, for example, the cleaning liquid A remaining on the upper surface 54a1 after the cleaning process flows toward the side surface 54a2 along the inclined portion 54a4 and is discharged. Therefore, in the fourth modified example, by providing the inclined portion 54a4 similarly to the third modified example, it is possible to make it difficult for the remaining cleaning liquid A to stay on the upper surface 54a1, and thus, in the substrate processing performed after the cleaning process, it is possible to suppress the The concentration of the treatment liquid decreases.

(second embodiment)

Next, the substrate processing system 1 of the second embodiment will be described. In addition, in the following description, the same code|symbol as a part already demonstrated is attached|subjected to the part similar to what was already demonstrated, and redundant description is abbreviate|omitted.

In the second embodiment, the rear surface side of the holding unit 31 is configured to suppress splashing of the treatment liquid toward the rotation center C side. Hereinafter, this configuration will be described with reference to FIG. 13 and subsequent drawings.

FIG. 13 is a schematic bottom view of the rear surface 31a of the holding portion 31 viewed from below the Z-axis. As shown in FIG. 13 , on the back surface 31 a of the holding portion 31 are provided a first fixing portion 110 for fixing the holding member 311 to the holding portion 31 and a support pin 312 (see FIG. 17 ) for fixing the wafer W to the holding portion 31. The second fixing part 120 .

The first fixing part 110 and the second fixing part 120 are respectively provided in plural numbers (three in the example of FIG. 13 ). In addition, the first fixing part 110 and the second fixing part 120 are arranged at substantially equal intervals in the circumferential direction around the rotation center C of the holding part 31 . In addition, the number and arrangement position of the first fixing part 110 and the second fixing part 120 mentioned above are examples and are not limiting.

FIG. 14A is a schematic bottom view showing enlarged first fixing portion 110 , and FIG. 14B is a schematic bottom view showing first fixing portion 210 of a comparative example. In addition, FIG. 15 is a sectional view taken along line XV-XV in FIG. 13 .

As shown in FIG. 15 , the holding member 311 is positioned so as to pass through the through-hole 31 b of the holding portion 31 , and sandwiches and holds the wafer W through the notch on the side of the one end 311 a. In addition, the other end 311 b of the holding member 311 is exposed to the rear surface 31 a side of the holding portion 31 , and the other end 311 b is fixed by the first fixing portion 110 .

Before continuing to describe the first fixing part 110 , a first fixing part 210 of a comparative example will be described using FIG. 14B . As shown in FIG. 14B , the first fixing part 210 in the comparative example includes: a main body part 211 that partially clamps the two side surfaces of the other end 311b of the holding part 31; screw 212.

The main body part 211 has a shape where the other end 311b of the holding part 31 is sandwiched so that the other end 311b protrudes toward the rotation center C (see FIG. 13 ) side of the holding part 31 . In addition, slotted screws are used as the screws 212 .

If the first fixing part 210 is configured as described above, for example, the processing liquid may splash toward the rotation center C side of the holding part 31 , and foreign matter such as crystals of the processing liquid may adhere to the vicinity of the first fixing part 210 .

That is, when the holding part 31 rotates in the rotation direction D, the scattered treatment liquid sometimes hits the part protruding from the main body part 211 as shown by the dotted closed curve B1 in FIG. C side splash.

In addition, when the screw 212 is a slotted screw, the treatment liquid splashes toward the rotation center C side of the holder 31 via the slotted groove 212 a due to the direction of the slotted groove 212 a. The treatment liquid splashed as described above may dry on the back surface 31 a of the holding unit 31 and may adhere as foreign matter such as crystals.

Therefore, the first fixing part 110 of the second embodiment has a configuration capable of suppressing the above-mentioned splashing of the liquid. Specifically, as shown in FIG. 14A , the first fixing part 110 has a main body part 111 and screws 112 .

The main body portion 111 integrally sandwiches both side surfaces of the other end 311 b of the holding portion 31 . That is, at the position where the holding part 31 is sandwiched by the main body part 111, the other end 311b of the holding part 31 is formed in such a shape that it does not protrude. Thereby, it is possible to suppress splashing of the treatment liquid when it hits the main body portion 111 .

In addition, in the main body 111 , an inclined guide portion 111 a for guiding the processing liquid to the outside of the holding portion 31 is formed on a side surface on which the scattered processing liquid is likely to come into contact, that is, a side surface on the rotation direction D side. As a result, the scattered processing liquid flows to the outside of the holding portion 31 by the inclined guide portion 111 a, so that splashing of the processing liquid can be suppressed.

In addition, as the screw 112, a hexagonal screw is used. Accordingly, it is possible to suppress splashing of the treatment liquid toward the rotation center C side of the holding portion 31 side through the groove of the head portion of the screw 112 . In addition, the screw 112 is not limited to a hexagonal screw, and any type of screw may be used as long as the head does not have a groove for the treatment liquid to flow.

In addition, as shown by imaginary lines in FIG. 14A , in the main body portion 111 , the inclined guide portion 111 c may be formed on the side surface opposite to the side surface on which the inclined guide portion 111 a is formed. As a result, the scattered processing liquid flows to the outside of the holding portion 31 by the inclined guide portion 111c, so that splashing of the processing liquid can be further suppressed.

Next, the second fixing portion 120 will be described with reference to FIGS. 16 and 17 . FIG. 16 is an enlarged schematic bottom view of the second fixing portion 120 , and FIG. 17 is a cross-sectional view taken along line XVII-XVII of FIG. 13 .

As shown in FIG. 17 , wafer W support pins 312 are members that support wafer W from the lower surface side. Specifically, the support pin 312 is positioned so as to pass through the through hole 31 c of the holding portion 31 , and supports the wafer W on the one end 312 a side. In addition, the other end 312 b of the support pin 312 protrudes toward the rear surface 31 a side of the holding portion 31 , and the other end 312 b is fixed by the second fixing portion 120 .

The second fixing part 120 of the second embodiment has a structure capable of suppressing the above-mentioned splashing of the liquid. Specifically, as shown in FIG. 16 , the second fixing portion 120 has a main body portion 121 and screws 122 .

The main body portion 121 is formed in a quadrangular shape when viewed from below. Thereby, it is possible to suppress splashing of the treatment liquid when it hits the main body portion 121 .

In addition, in the main body 121 , an inclined guide portion 121 a for guiding the processing liquid to the outside of the holding portion 31 is formed on a side surface where the scattered processing liquid is likely to come into contact, that is, a side surface on the rotation direction D side. As a result, the scattered processing liquid flows to the outside of the holding portion 31 by the inclined guide portion 121a, so that splashing of the processing liquid can be suppressed.

In addition, as the screw 122, a hexagonal screw is used. Accordingly, it is possible to suppress splashing of the liquid toward the rotation center C side on the side of the holding portion 31 . In addition, the screw 122 is not limited to the hexagon screw similarly to the screw 112 .

In addition, as shown by imaginary lines in FIG. 16 , in the main body 121 , the inclined guide portion 121c may also be formed on the side opposite to the side on which the inclined guide portion 121a is formed. As a result, the scattered processing liquid flows to the outside of the holding portion 31 by the inclined guide portion 121c, so that splashing of the processing liquid can be further suppressed.

(third embodiment)

Next, the cleaning liquid supply unit 80 of the processing unit 16 according to the third embodiment will be described. Fig. 18 is a schematic plan view of the first peripheral wall portion 54a in the third embodiment. As shown in FIG. 18 , in the third embodiment, the discharge port 85 is an opening formed over a predetermined range on the bottom surface of the groove portion 58 . The boundary between the discharge port 85 and the groove portion 58 includes the upper edge 84d of the inclined portion of the cleaning liquid supply path 84c1 (see FIGS. 19 and 20 described later), but is not limited thereto. In addition, the opening area of the discharge port 85 is formed larger than the area of the flow path of the cleaning liquid supply pipe 84c (see FIG. 20 ).

And, by providing the intermediate portion 400 between the discharge port 85 and the cleaning liquid supply pipe 84c, the water force of the cleaning liquid from the cleaning liquid supply pipe 84c is weakened, and the discharge direction of the discharge port 85 is inclined, so that the water from the cleaning liquid supply pipe 84c is inclined. The flow path of the cleaning liquid in the tube 84c faces the groove portion 58 . In other words, the intermediate portion 400 functions as a buffer zone for weakening the water force of the cleaning liquid supplied from the cleaning liquid supply pipe 84c to a water force suitable for being supplied to the upper surface 54a1 and the groove portion 58, and changes the direction of the flow path of the cleaning liquid. function.

Hereinafter, the detailed configuration of the intermediate portion 400 will be described with reference to FIGS. 19 and 20 . FIG. 19 is a schematic enlarged plan view enlarging the vicinity of the closed curve E1 indicated by the dashed-dotted line in FIG. 18 . In addition, FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 19 .

As shown in FIGS. 19 and 20 , the cleaning liquid supply unit 80 has an intermediate portion 400 composed of a base portion 401 having a concave portion 402 and a flow path 403 .

The base 401 is formed in a columnar shape (an example of a columnar shape), but is not limited to this, and may have other shapes such as a prism, for example. The recess 402 is formed on the side surface of the base 401 along the circumferential direction. In the example shown in FIGS. 19 and 20 , the concave portion 402 is formed over the entire circumference of the side surface of the base portion 401 , but it is not limited thereto, and may be formed on a part of the side surface of the base portion 401 .

Moreover, a stagnation part 404 is formed between the recessed part 402 and the 1st peripheral wall part 54a. The stagnation portion 404 is a space formed by the concave portion 402 and the first peripheral wall portion 54a when the intermediate portion 400 is attached to the first peripheral wall portion 54a. As will be described later, the cleaning liquid supplied from the cleaning liquid supply pipe 84 c temporarily stagnates in the stagnation portion 404 , so that the force of the cleaning liquid can be weakened and the cleaning liquid can be prevented from being scattered. In addition, the flow rate of the cleaning liquid can be increased by utilizing the retention of the cleaning liquid in the stagnation portion 404 , so that the cleaning liquid can be diffused to the entire groove portion 58 in a short time.

The flow path 403 is formed inside the base 401, and flows the cleaning liquid supplied from the cleaning liquid supply pipe 84c. In the flow path 403, an inflow port 403a is formed at one end, and an outflow port 403b is formed at the other end.

In addition, a facing surface 405 is formed on a surface of the flow path 403 facing the inlet 403 a.

The inflow port 403a is formed near the center of the lower surface of the base 401, and is connected to the cleaning liquid supply pipe 84c to allow the cleaning liquid to flow in. The outflow port 403b is formed in the concave portion 402, and allows the washing liquid that has flowed into the inflow port 403a to flow out. In other words, the outflow port 403b is formed on the side of the base 401 . In this way, the inlet 403a is formed on the lower surface of the base 401, the outlet 403b is formed on the side of the base 401, and the opposite surface 405 is formed on the upper surface of the flow path 403 opposite to the inlet 403a, so that the flow path 403 is formed on the base 401. The internally curved shape is formed, for example, in an inverted L-shape in cross-section, but the shape and the like are not limited thereto.

As shown in FIG. 20, the intermediate part 400 comprised as mentioned above is attached to the attachment hole 86 formed in the 1st peripheral wall part 54a. At this time, the intermediate portion 400 is attached to the mounting hole 86 so that the axial direction of the cylindrical base portion 401 is along the Z-axis direction. In addition, when the intermediate portion 400 is attached to the mounting hole 86, the inflow port 403a is connected to the cleaning liquid supply pipe 84c, and the outflow port 403b is positioned so that the cleaning liquid supply path 84c1 is inclined.

Next, the flow of the cleaning liquid will be described. As indicated by the dotted arrows in FIG. At this time, since the washing liquid hits the upper end of the flow path 403, that is, the opposite surface 405, and flows toward the outflow port 403b, the force of the water is moderately weakened. In addition, since the outflow port 403b is formed in the recessed portion 402, the cleaning liquid ejected from the outflow port 403b hits the inclined portion of the cleaning liquid supply path 84c1 and rebounds, temporarily stagnates in the stagnation portion 404, and the flow rate increases. state.

And, the cleaning liquid whose flow rate has increased at the stagnation portion 404 flows from the inclined portion of the cleaning liquid supply path 84c1 toward the upper edge 84d, and flows from the discharge port 85 to the direction along the groove portion 58 (in FIG. to the left) to eject. That is, the intermediate portion 400 tilts the ejection direction of the ejection port 85 with respect to the Z-axis direction, and ejects the washing liquid from the ejection port 85 in a direction along the groove portion 58 .

Thus, in the third embodiment, as shown in FIG. 18 , the cleaning liquid can be caused to flow in one direction along the circumferential direction on the upper surface 54a1 of the first peripheral wall portion 54a, and therefore, the cleaning liquid can be made to flow on the upper surface 54a1. Spread upward to a wider area and clean efficiently.

In addition, the opening area of the discharge port 85 is formed larger than the area of the flow path of the cleaning liquid supply pipe 84c. Accordingly, a relatively large amount of cleaning liquid can be supplied to the groove portion 58 , and the cleaning liquid can be diffused over the entire groove portion 58 in a short time. In addition, it is also possible to prevent excessive water force from being applied to the washing liquid. In addition, although the above-mentioned intermediate part 400 and the 1st peripheral wall part 54a are made independently, they may be comprised integrally.

(fourth embodiment)

Next, the cleaning liquid supply unit 80 of the processing unit 16 according to the fourth embodiment will be described. The intermediate portion 400 of the fourth embodiment has a plurality of (for example, two) outflow ports 403b.

Fig. 21 is a schematic plan view of the first peripheral wall portion 54a in the fourth embodiment. As shown in FIG. 21 , in the fourth embodiment, the discharge port 85 is an opening formed with a larger opening area in plan view than the discharge port 85 of the third embodiment.

In addition, the cleaning liquid supply path 84c1 connected to the discharge port 85 has a first cleaning liquid supply path 84c11 and a second cleaning liquid supply path 84c12, and the intermediate portion 400 is provided on the first cleaning liquid supply path 84c11 and the second cleaning liquid supply path 84c12. between.

FIG. 22 is a schematic enlarged plan view enlarging the vicinity of the closed curve E2 shown by the dashed-dotted line in FIG. 21 , and FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22 .

In the example shown in FIG. 23 , the first cleaning liquid supply path 84c11 has a portion inclined to the Y-axis negative direction with respect to the Z-axis direction, and the second cleaning liquid supply path 84c12 has a portion inclined to the Y-axis positive direction with respect to the Z-axis direction. side sloping parts. That is, the first cleaning liquid supply path 84c11 and the second cleaning liquid supply path 84c12 are formed approximately bilaterally symmetrically. In addition, the inclination direction and substantially bilaterally symmetrical shape of the first cleaning liquid supply path 84c11 and the second cleaning liquid supply path 84c12 described above are merely examples and are not limiting. In addition, the boundary between the discharge port 85 and the groove portion 58 includes the upper end edge 84d1 of the inclined portion of the first cleaning liquid supply path 84c11 and the upper end edge 84d2 of the inclined portion of the second cleaning liquid supply path 84c12. Not limited to this.

The intermediate portion 400 of the cleaning liquid supply unit 80 has a plurality of (for example, two) cleaning liquid outlets 403b1 and 403b2 opening in different directions. However, one of the outflow ports 403b1 may be described as "the first outflow port 403b1", and the other outflow port 403b2 may be described as "the second outflow port 403b2".

Specifically, in the middle part 400, the flow path 403 branches in the middle, and in the branched flow path 403, a first outflow port 403b1 is formed at one end on the downstream side, and a second outflow port 403b2 is formed at the other end. For example, the opening direction of the first outlet 403b1 is set to the left direction of the paper surface in FIG. 23 , and the opening direction of the second outlet port 403b2 is set to the right direction of the paper surface of FIG. 23 . That is, the first outflow port 403b1 and the second outflow port 403b2 may be formed at positions facing each other.

In other words, the first outflow port 403b1 and the second outflow port 403b2 may open so as to have bilaterally symmetrical shapes or approximately bilaterally symmetrical shapes when viewed along the circumferential direction of the first peripheral wall portion 54a. In this case, The flow path 403 is formed inside the base 401 in, for example, a T-shape in cross-section. In addition, the shape, number, etc. of the flow path 403, the 1st outflow port 403b1, and the 2nd outflow port 403b2 mentioned above are an illustration and are not restrictive.

When the intermediate portion 400 is attached to the mounting hole 86, the first outflow port 403b1 is positioned so that the first outlet 403b1 is inclined toward the first cleaning liquid supply path 84c11, and the second outflow port 403b2 is inclined toward the second cleaning liquid supply path 84c12. parts.

The intermediate portion 400 and the first cleaning liquid supply path 84c11 and the second cleaning liquid supply path 84c12 are configured as described above, so that the cleaning liquid is sprayed from the intermediate portion 400 in two directions. That is, as shown by the dotted arrow, the cleaning liquid ejected from the first outlet 403b1 through the flow path 403 flows from the inclined portion of the first cleaning liquid supply path 84c11 toward the upper edge 84d1, and flows from the ejection port 85 to the upper edge 84d1. The direction of the groove portion 58 (in FIG. 23, the left direction of the paper surface) is ejected.

On the other hand, as shown by the arrow of the one-dot chain line, the cleaning liquid ejected from the second outflow port 403b2 through the flow channel 403 flows from the inclined portion of the second cleaning liquid supply path 84c12 toward the upper edge 84d2, and flows from the nozzle The outlet 85 ejects in a direction along the groove portion 58 (rightward direction in FIG. 23 ).

Therefore, in the fourth embodiment, as shown in FIG. 21 , the discharge port 85 can discharge the cleaning liquid toward the through-holes 59 adjacent to the discharge port 85 on both sides in plan view, so that cleaning liquid can be cleaned quickly and efficiently. The portion of the upper surface 54a1 located between the discharge port 85 and the adjacent through hole 59 is cleaned.

In addition, although not shown, in the intermediate part 400, for example, an outflow port of the cleaning liquid is formed on the upper surface of the base part 401, and the upper surface of the base part 401 may be cleaned by letting the cleaning liquid flow out from the outflow port. cleaning.

＜6.Another example of cleaning treatment＞

Next, another example of cleaning processing will be described. The cleaning process has been described above with reference to FIG. 8 , but is not limited thereto. FIG. 24 is a flowchart showing another example of the processing procedure of cleaning processing. In addition, although the process of FIG. 24 can be performed by the processing unit 16 of 4th Embodiment, for example, it is not limited to this.

As shown in FIG. 24 , the control unit 18 of the control device 4 supplies the cleaning liquid after the first liquid receiving unit 55a is lowered by the first lifting drive unit 56b to move to the retracted position (step S20). Thereby, for example, cleaning of the vicinity of the discharge port 85 and the intermediate portion 400 can be performed.

Next, after the control unit 18 raises the first liquid receiving unit 55a to move to the processing position, the driving unit 33 rotates the holding unit 31 counterclockwise and supplies the washing liquid (step S21 ). As described above, by rotating the holding portion 31 , a swirling flow is generated, so that the washing liquid can be washed over a wide area along the groove portion 58 to a place relatively far from the discharge port 85 .

Next, the control unit 18 supplies the washing liquid while rotating the holding unit 31 counterclockwise after lowering the first liquid receiving unit 55 a to move to the retracted position (step S22 ). Thereby, the lower surface 55a1 of the first liquid receiving part 55a and the upper surface 54a1 of the first peripheral wall part 54a can be cleaned. In addition, the control part 18 may repeat the process of above-mentioned steps S20-S22 predetermined number of times.

Next, the control unit 18 supplies the washing liquid while rotating the holding unit 31 counterclockwise after raising the first liquid receiving unit 55 a to move to the treatment position (step S23 ).

Next, the control unit 18 supplies the cleaning liquid while rotating the holding unit 31 clockwise while keeping the first liquid receiving unit 55 a raised (step S24 ). In this way, in this embodiment, after the cleaning liquid is supplied in a state where the holder 31 is rotated counterclockwise (an example of a predetermined direction), the holder 31 is rotated clockwise (a direction opposite to the predetermined direction). One example) supply cleaning fluid while rotating.

Thereby, for example, as shown in FIG. 21 , when the holder 31 rotates counterclockwise, a large amount of cleaning liquid is supplied in the direction of the arrow of the single-dot chain line, and it is possible to focus on the parts where a large amount of cleaning liquid is supplied. Clean up. On the other hand, when the holder 31 rotates clockwise, more washing liquid is supplied in the direction of the arrow indicated by the dotted line, and it is possible to focus on washing the portion supplied with a large amount of washing liquid. That is, by switching the rotation direction of the holding part 31 in the middle of the cleaning process, the upper surface 54a1 of the first peripheral wall part 54a can be cleaned more efficiently.

Continuing the description of FIG. 24 , the control unit 18 then lowers the first liquid receiving unit 55 a to move to the retracted position, and then rotates the holding unit 31 clockwise while supplying the cleaning liquid (step S25 ). In addition, the control part 18 may repeat the process of above-mentioned step S24, S25 predetermined number of times.

Next, the control unit 18 supplies the cleaning liquid while rotating the holding unit 31 clockwise after raising the first liquid receiving unit 55 a to move to the treatment position (step S26 ).

Next, the outer peripheral side of the first liquid receiving portion 55a is cleaned. Specifically, the control unit 18 lowers the first liquid receiving unit 55a to move to the retracted position, and raises the second liquid receiving unit 55b to move to the treatment position (see FIG. 3 ). Thereby, the 1st liquid receiving part 55a and the 2nd liquid receiving part 55b are separated.

Then, the control unit 18 ejects DIW as the cleaning liquid after moving the nozzle 41 of the processing fluid supply unit 40 to the vicinity of the first liquid receiving unit 55 a. Thus, the cleaning liquid is supplied to the outer peripheral side of the first liquid receiving portion 55a from the gap between the first liquid receiving portion 55a and the second liquid receiving portion 55b, thereby cleaning the outer peripheral side of the first liquid receiving portion 55a ( Step S27).

In addition, the cleaning of the inner peripheral side of the first liquid receiving part 55a is performed, for example, in the second chemical solution treatment shown in step S4 in FIG. This is performed before and after cleaning the outer peripheral side of the first liquid receiving portion 55a. In addition, when cleaning the inner peripheral side of the first liquid receiving part 55a, for example, the second chemical solution may be supplied to the inner peripheral side of the first liquid receiving part 55a for a few seconds to rinse crystals and the like. At this time, the second chemical solution that has rinsed the first liquid receiving part 55a may contain crystals. Therefore, it may not enter the recovery line but flow to the drain line, and after a predetermined period of time does not contain crystals. The discharge line is switched to the recovery line to start recovery.

In addition, when the lower surface 55a1 of the first liquid receiving part 55a, the upper surface 54a1 of the first peripheral wall part 54a, and the outer peripheral side of the first liquid receiving part 55a are cleaned, the cleaning liquid containing, for example, crystals of BHF, etc. The second drain tank 501b (see FIG. 3 ) flows in. This second liquid drainage tank 501b is a liquid drainage tank for alkaline treatment liquid, therefore, it is not preferable that the cleaning solution containing crystals of BHF as an acidic treatment liquid is passed from the second liquid drainage tank 501b through the drainage pipe 91b. Flow into the drain line.

Therefore, in the present embodiment, when the cleaning liquid containing crystals of BHF flows into the second drain tank 501b, although not shown in the figure, the valve 62b is switched so that the flowing cleaning liquid flows into the drain tank 501b as the cleaning liquid. The second liquid discharge pipe 91a2 of the liquid line flows. This prevents the cleaning liquid containing BHF crystals and the like from flowing downstream of the valve 62b, and prevents the cleaning liquid containing BHF crystals and the like from flowing into the discharge line of the alkali-based treatment liquid.

Following the description of FIG. 24 , the control unit 18 next performs drying processing (step S28 ). Specifically, the control unit 18 stops the supply of the cleaning liquid, and rotates the holding unit 31 clockwise to generate a swirling flow, thereby drying the first peripheral wall portion 54a and the first liquid receiving portion 55a. When this drying process is completed, a series of cleaning processes are completed.

In addition, in the above-mentioned embodiment, the cleaning liquid is supplied from the discharge port 85 of the cleaning liquid supply pipe 84c to the upper surface 54a1 of the first peripheral wall portion 54a, but the present invention is not limited thereto. That is, for example, a cleaning liquid supply nozzle may be arranged at a position facing the upper surface 54a1, and the cleaning liquid may be supplied from the supply nozzle to the upper surface 54a1.

In addition, in the above description, the cleaning liquid supply part 80 cleans the upper surface 54a1 of the first peripheral wall part 54a, but the present invention is not limited thereto. That is, the cleaning solution supply unit 80 may be configured to clean the upper surface 54b1 of the second peripheral wall portion 54b instead of cleaning the upper surface 54a1 or in addition to cleaning the upper surface 54a1 of the first peripheral wall portion 54a. 80 also cleans the upper surface 54b1 of the second peripheral wall portion 54b.

In addition, as an embodiment for weakening the water potential of the cleaning liquid from the cleaning liquid supply pipe, it is not limited to the intermediate portion 400 in the above-mentioned third embodiment and fourth embodiment.

In order to weaken the flow velocity of the cleaning liquid from the cleaning liquid supply pipe, between the discharge port of the cleaning liquid supply pipe 84c and the cleaning liquid discharge port 85, there is a stagnation portion where the cleaning liquid temporarily stagnates, so that the flow rate from the cleaning liquid supply pipe can be weakened. The water potential of the cleaning solution.

In addition, in order to weaken the flow velocity of the cleaning liquid from the cleaning liquid supply pipe, a surface opposite to the discharge port of the cleaning liquid supply pipe 84c is provided to change the flow of the cleaning liquid, and there is also a stagnation portion for temporarily retaining the cleaning liquid whose flow has been changed. , so that the water potential of the cleaning liquid from the cleaning liquid supply pipe can be weakened.

In addition, in the above-mentioned processing unit 16, the acid-based processing liquid is recovered and reused through the first drain pipe 91a1, but the present invention is not limited to this, and the acid-based processing liquid may not be reused. In addition, in the above content, the first lifting drive part 56b and the second lifting drive part 57b are set as independent, but not limited thereto, for example, the first lifting drive part 56b and the second lifting drive part 57b may be shared. .

Further effects and modified examples can be easily derived by those skilled in the art. Therefore, the broader aspects of the present invention are not limited to the specific detailed and representative embodiments described and described above. Accordingly, various changes can be made without departing from the spirit or scope of the general inventive concept defined by the claims and their equivalents.

Claims (17)

1. a kind of substrate board treatment, it is characterised in that

It includes：

Maintaining part, it keeps substrate；

Treatment fluid supply unit, it supplies treatment fluid to the substrate；

Cups, it has：Bottom；The surrounding wall portion of tubular, it is erect from the bottom and set；Liquid-receivable section, it is located at institute The top of surrounding wall portion is stated, the treatment fluid dispersed out from the substrate is received；And groove portion, it is circumferentially formed at the perisporium The upper surface in portion, the cups surround the maintaining part；

And cleaning solution supply part, it supplies cleaning fluid to the upper surface of the surrounding wall portion.

2. substrate board treatment according to claim 1, it is characterised in that

The cups include：

Supporting member, it supports the liquid-receivable section, and the liquid-receivable section is lifted relative to the surrounding wall portion；

Through hole, it is formed in the surrounding wall portion, is run through for the supporting member, and in the upper table mask of the surrounding wall portion There is opening portion,

The opening portion is formed as overlapping with least a portion of the groove portion when overlooking.

3. substrate board treatment according to claim 1 or 2, it is characterised in that

The cleaning solution supply part has the cleaning fluid ejiction opening in groove portion formation.

4. substrate board treatment according to claim 3, it is characterised in that

The cleaning solution supply part has the cleaning solution supplying path being connected with the cleaning fluid ejiction opening,

Peripheral, oblique of the cleaning solution supplying path along the surrounding wall portion.

5. the substrate board treatment according to claim 3 or 4, it is characterised in that

The cleaning solution supply part has the cleaning solution supplying pipe being connected with cleaning solution supplying source,

Make the flow of water of the cleaning fluid from the cleaning solution supplying pipe in the cleaning solution supplying pipe and the cleaning fluid ejiction opening Between weaken.

6. substrate board treatment according to claim 5, it is characterised in that

The area of the stream of cleaning solution supplying pipe is big described in the open area ratio of the cleaning fluid ejiction opening.

7. the substrate board treatment according to claim 5 or 6, it is characterised in that

The cleaning solution supply part has located at the pars intermedia between the cleaning solution supplying pipe and the cleaning fluid ejiction opening,

The pars intermedia includes：

Base portion, it is formed as column；

Recess, it is circumferentially formed at the side of the base portion；

Inflow entrance, it is formed at the base portion, is connected to the cleaning solution supplying pipe；

Flow export, it is formed at the recess, flows into the cleaning fluid outflow of the inflow entrance,

Using the pars intermedia, weaken the flow of water of the cleaning fluid from the cleaning solution supplying pipe.

8. according to substrate board treatment according to any one of claims 1 to 7, it is characterised in that

The surrounding wall portion, which has, is formed at the upper surface and towards the oblique rake of the groove portion.

9. according to substrate board treatment according to any one of claims 1 to 8, it is characterised in that

The surrounding wall portion, which has, is formed at the upper surface and towards the oblique rake in side.

10. according to substrate board treatment according to any one of claims 1 to 9, it is characterised in that

The substrate board treatment has the control unit being controlled to the cleaning solution supply part and the liquid-receivable section,

The control unit is in the state of the liquid-receivable section is moved to than processing position retreating position on the lower from institute State cleaning solution supply part supply cleaning fluid.

11. according to substrate board treatment according to any one of claims 1 to 10, it is characterised in that

When the cleaning solution supply part is cleaned in the upper surface to the surrounding wall portion and in the lower surface to liquid-receivable section The flow of cleaning fluid is changed when being cleaned.

12. the substrate board treatment according to any one of claim 1~11, it is characterised in that

The substrate board treatment has the control unit being controlled to the cleaning solution supply part and the maintaining part,

The control unit supplies cleaning fluid in the state of the maintaining part is rotating from the cleaning solution supply part.

13. substrate board treatment according to claim 12, it is characterised in that

The cleaning solution supply part has flow export of the opening towards different multiple cleaning fluids,

The control unit is in the state of the maintaining part is rotated along predetermined direction from the cleaning solution supply part Multiple flow exports supplied cleaning fluid, afterwards, make the maintaining part along opposite to the predetermined direction direction carry out From multiple flow exports supply cleaning fluids of the cleaning solution supply part in the state of rotation.

14. substrate board treatment according to claim 1, it is characterised in that

The cleaning solution supply part includes：

Cleaning fluid ejiction opening, it is formed at the groove portion；

Cleaning solution supplying path, it is connected with the cleaning fluid ejiction opening,

Peripheral, oblique of the cleaning solution supplying path along the surrounding wall portion,

Also, the cleaning solution supply part also has the cleaning solution supplying pipe being connected with cleaning solution supplying source,

The area of the stream of cleaning solution supplying pipe described in the open area ratio of the cleaning fluid ejiction opening is big,

Cleaning fluid delay portion is provided between the cleaning solution supplying pipe and the cleaning fluid ejiction opening.

15. a kind of substrate processing method using same, it is characterised in that

It includes：

The substrate of substrate is kept to keep process；

The treatment fluid supply step for the treatment of fluid is supplied to the substrate；

Cleaning solution supplying process, in the cleaning solution supplying process, cleaning fluid is supplied in cups to the upper surface of surrounding wall portion, The cups have：Bottom；The surrounding wall portion of tubular, it is erect from the bottom and set；Liquid-receivable section, it is located at described The top of surrounding wall portion, receives the treatment fluid dispersed out from the substrate；And groove portion, it is circumferentially formed at the surrounding wall portion Upper surface, the cups surround the maintaining part for keeping the substrate.

16. substrate processing method using same according to claim 15, it is characterised in that

In the cleaning solution supplying process, the retreating position than processing position on the lower is moved to making the liquid-receivable section In the state of supplied cleaning fluid, afterwards, the liquid-receivable section is moved to processing position, and make the maintaining part edge In the state of predetermined direction is rotated and supply cleaning fluid.

17. substrate processing method using same according to claim 16, it is characterised in that

In the cleaning solution supplying process, further making the liquid-receivable section remain in the processing position and The maintaining part has been supplied cleaning fluid in the state of being rotated along direction opposite to the predetermined direction, afterwards, make The maintaining part, which remains, to be rotated along the opposite direction and the liquid-receivable section is moved to the retreating position Cleaning fluid is supplied under state.