[go: up one dir, main page]

CN107005216B - Attenuator - Google Patents

Attenuator Download PDF

Info

Publication number
CN107005216B
CN107005216B CN201480083798.9A CN201480083798A CN107005216B CN 107005216 B CN107005216 B CN 107005216B CN 201480083798 A CN201480083798 A CN 201480083798A CN 107005216 B CN107005216 B CN 107005216B
Authority
CN
China
Prior art keywords
resistor
attenuator
series
switches
switched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480083798.9A
Other languages
Chinese (zh)
Other versions
CN107005216A (en
Inventor
慕丰浩
S.马特蒂斯森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of CN107005216A publication Critical patent/CN107005216A/en
Application granted granted Critical
Publication of CN107005216B publication Critical patent/CN107005216B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00Networks using active elements
    • H03H11/02Multiple-port networks
    • H03H11/24Frequency-independent attenuators
    • H03H11/245Frequency-independent attenuators using field-effect transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24Frequency- independent attenuators
    • H03H7/25Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H03G1/0094Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated using switched capacitors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B7/00Radio transmission systems, i.e. using radiation field
    • H04B7/02Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/06Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
    • H04B7/0602Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using antenna switching
    • H04B7/0608Antenna selection according to transmission parameters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G2201/00Indexing scheme relating to subclass H03G
    • H03G2201/10Gain control characterised by the type of controlled element
    • H03G2201/106Gain control characterised by the type of controlled element being attenuating element

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Electronic Switches (AREA)

Abstract

An attenuator for attenuating a signal is disclosed. The attenuator (100) comprises a differential input port (Inp; Inn) having a positive input node (Inp) and a negative input node (Inn) for receiving a signal; and a differential output port (Outp; Outn) having a positive output node (Outp) and a negative output node (Outn) for outputting the attenuated signal. The attenuator (100) further comprises a first switched resistor network (102) connected between the positive input node (Inp) and the positive output node (Outp); and a second switched resistor network (104) connected between the negative input node (Inn) and the negative output node (Outn). There is also a pair of compensation paths connected between the first and second switched resistor networks (102; 104) for cancellation of parasitic leakage thereof, wherein the first compensation path (106) is connected between the positive input node (Inp) and the negative output node (Outn), and the second compensation path (108) is connected between the negative input node (Inn) and the positive output node (Outp). The attenuator (100) further comprises a control circuit (110) for generating control signals for controlling the first and second switched resistor networks (102; 104).

Description

衰减器Attenuator

技术领域technical field

本文中的实施例涉及用于衰减信号的衰减器。具体地,实施例涉及用于在电子装置中衰减无线电频率信号的无线电频率宽带分级衰减器(step attenuator)。Embodiments herein relate to attenuators for attenuating signals. In particular, embodiments relate to radio frequency broadband step attenuators for attenuating radio frequency signals in electronic devices.

背景技术Background technique

衰减器是用于连续或者逐步控制信号的幅度的电路。当信号由衰减器逐步控制的时候,衰减器称为分级衰减器。衰减器或者分级衰减器广泛运用在各种电子装置中,各种电子装置的示例如下:在无线通信装置(包含例如用于通信和定位的无线电基站中的多天线系统、用户设备或者移动装置和基站)中的、还有在其它通用电子电路和设备(比如自动增益控制电路和测量设备等)中的、无线电频率收发器或者无线电频率前端。对于无线电频率前端,以互补金属氧化物半导体(CMOS)技术设计的芯片上分级衰减器具有小尺寸、低成本、灵活和高集成水平等优势。有一些对设计芯片上分级衰减器的要求,比如衰减分级中的良好线性、低插入损失、宽带宽以及精准度等。An attenuator is a circuit used to continuously or stepwise control the amplitude of a signal. When the signal is gradually controlled by an attenuator, the attenuator is called a step attenuator. Attenuators or graded attenuators are widely used in various electronic devices, examples of which are as follows: in wireless communication devices (including, for example, multi-antenna systems in radio base stations for communication and positioning, user equipment or mobile devices and base stations), as well as in other general-purpose electronic circuits and equipment (such as automatic gain control circuits and measurement equipment, etc.), radio frequency transceivers or radio frequency front-ends. For radio frequency front ends, on-chip graded attenuators designed in complementary metal-oxide-semiconductor (CMOS) technology offer the advantages of small size, low cost, flexibility, and high levels of integration. There are some requirements for designing on-chip stepped attenuators, such as good linearity, low insertion loss, wide bandwidth, and accuracy in the attenuation step.

在Cheng,W. et al, A Wideband IM3 Cancellation Technique for CMOSAttenuators, IEEE International Solid-State Circuits Conference, 2012以及在Cheng,W. et al, A Wideband IM3 Cancellation Technique for CMOS π- and T-Attenuators, IEEE Journal of Solid-State Circuits, 2013, Vol. 48, NO. 2中,所公开的芯片上Pi类型和T类型分级衰减器提供6、12、18和24dB的衰减分级。然而,所公开的Pi类型和T类型分级衰减器,当工作在较低衰减模式时,也就是当衰减水平较低、比如6或12dB的衰减分级的时候,特别是当不需要衰减的时候,具有大的插入损失。高插入损失将减少输入信号的要求的信噪比(SNR)和增益。此外,所公开的Pi类型和T类型分级衰减器还承受开关漏电,开关漏电损害在深度衰减模式期间在高频率的输入信号的衰减水平。In Cheng, W. et al, A Wideband IM3 Cancellation Technique for CMOSAttenuators, IEEE International Solid-State Circuits Conference , 2012 and in Cheng, W. et al, A Wideband IM3 Cancellation Technique for CMOS π- and T-Attenuators, IEEE Journal of Solid-State Circuits , 2013, Vol. 48, NO. 2, the disclosed on-chip Pi-type and T-type stepped attenuators provide 6, 12, 18, and 24 dB of attenuation steps. However, the disclosed Pi-type and T-type stepped attenuators, when operating in a lower attenuation mode, that is, when the attenuation level is low, such as an attenuation step of 6 or 12 dB, especially when no attenuation is required, has a large insertion loss. A high insertion loss will reduce the required signal-to-noise ratio (SNR) and gain of the input signal. In addition, the disclosed Pi-type and T-type stepped attenuators also suffer from switching leakage that impairs the attenuation level of the input signal at high frequencies during the deep attenuation mode.

在Xiao, J. et al, A High Dynamic Range CMOS Variable Gain Amplifierfor Mobile DTV Tuner, IEEE Journalof Solid-State Circuits, 2007, Vol. 42, No.2中,呈现适合移动数字电视(DTV)调谐器的可变增益放大器。可变增益通过使用电容性衰减器和电流导引跨导级而实现。虽然所呈现的可变增益放大器提供增益和衰减,但是由于有源装置也就是跨导级而导致其线性不良。不良线性将导致无线电频率前端的不良频率选择性,以及因此使所要求的SNR降级,这是由于来自其它无用频率信号的干扰而造成。In Xiao, J. et al, A High Dynamic Range CMOS Variable Gain Amplifier for Mobile DTV Tuner, IEEE Journalof Solid-State Circuits , 2007, Vol. 42, No.2, presented a possible solution for mobile digital television (DTV) tuners variable gain amplifier. Variable gain is achieved using capacitive attenuators and current steering transconductance stages. Although the variable gain amplifier presented provides gain and attenuation, it suffers from poor linearity due to the active device, ie, the transconductance stage. Poor linearity will result in poor frequency selectivity of the radio frequency front end, and thus degrade the required SNR, due to interference from other unwanted frequency signals.

发明内容SUMMARY OF THE INVENTION

因此本文中的实施例的目的是提供具有改善性能的衰减器。It is therefore an object of embodiments herein to provide attenuators with improved performance.

根据本文中的实施例的一个方面,通过用于衰减信号的衰减器实现目的。衰减器包括:具有正输入节点和负输入节点的差分输入端口,用于接收信号;以及具有正输出节点和负输出节点的差分输出端口,用于输出衰减的信号。衰减器还包括:第一开关式电阻器网络,连接在正输入节点和正输出节点之间;以及第二开关式电阻器网络,连接在负输入节点和负输出节点之间。衰减器还包括一对补偿路径,用于第一和第二开关式电阻器网络中的寄生漏电的消除。该对补偿路径连接成使得:第一补偿路径连接在正输入节点和负输出节点之间,以及第二补偿路径连接在负输入节点和正输出节点之间。衰减器还包括控制电路,用于产生用于控制第一和第二开关式电阻器网络的控制信号。According to one aspect of the embodiments herein, the object is achieved by an attenuator for attenuating a signal. The attenuator includes: a differential input port having a positive input node and a negative input node for receiving a signal; and a differential output port having a positive output node and a negative output node for outputting the attenuated signal. The attenuator also includes: a first switched resistor network connected between the positive input node and the positive output node; and a second switched resistor network connected between the negative input node and the negative output node. The attenuator also includes a pair of compensation paths for cancellation of parasitic leakage in the first and second switched resistor networks. The pair of compensation paths are connected such that the first compensation path is connected between the positive input node and the negative output node, and the second compensation path is connected between the negative input node and the positive output node. The attenuator also includes a control circuit for generating a control signal for controlling the first and second switched resistor networks.

由于根据本文中的实施例的衰减器使用该对补偿路径,因此在第一和第二开关式电阻器网络中的寄生漏电被消除。通过交叉耦合该对补偿路径而实现该消除,也就是,第一补偿路径连接在正输入节点和负输出节点之间,以及第二补偿路径连接在负输入节点和正输出节点之间。以此方式,任何在正输入节点的漏电信号耦合至负输出节点,以便消除任何在负输出节点的漏电信号。以相同方式,任何在负输入节点的漏电信号耦合至正输出节点,以便消除任何在正输出节点的漏电信号。这样促成良好的衰减性能,特别是在高频率和在深度衰减分级中。此外,开关式电阻器网络是无源的以及因此具有高线性。Since the attenuator according to embodiments herein uses the pair of compensation paths, parasitic leakage in the first and second switched resistor networks is eliminated. The cancellation is achieved by cross-coupling the pair of compensation paths, that is, a first compensation path is connected between the positive input node and the negative output node, and a second compensation path is connected between the negative input node and the positive output node. In this way, any leakage signal at the positive input node is coupled to the negative output node so as to cancel any leakage signal at the negative output node. In the same way, any leakage signal at the negative input node is coupled to the positive output node so as to cancel any leakage signal at the positive output node. This results in good attenuation performance, especially at high frequencies and in deep attenuation stages. Furthermore, the switched resistor network is passive and therefore highly linear.

因此,本文中的实施例提供比如关于在高频率和在深度衰减分级中的衰减水平和线性等方面具有改善性能的衰减器。Accordingly, embodiments herein provide attenuators with improved performance, such as with respect to attenuation levels and linearity at high frequencies and in deep attenuation stages.

附图说明Description of drawings

参考附图来更详细地描述本文中的实施例的示例,其中:Examples of embodiments herein are described in greater detail with reference to the accompanying drawings, in which:

图1 是根据本文中的实施例的衰减器的总框图。FIG. 1 is a general block diagram of an attenuator according to embodiments herein.

图2 是图示根据本文中的实施例的具有Pi类型开关式电阻器网络的衰减器的示意框图。Figure 2 is a schematic block diagram illustrating an attenuator with a Pi-type switched resistor network according to embodiments herein.

图3 是图示根据本文中的实施例的具有T类型开关式电阻器网络的衰减器的示意框图。Figure 3 is a schematic block diagram illustrating an attenuator with a T-type switched resistor network according to embodiments herein.

图4 是图示根据本文中的实施例的可开关式可变串联电阻器的示意图。FIG. 4 is a schematic diagram illustrating a switchable variable series resistor according to embodiments herein.

图5 是图示根据本文中的实施例的可开关式可变并联电阻器的示意图。5 is a schematic diagram illustrating a switchable variable shunt resistor according to embodiments herein.

图6 是图示根据本文中的实施例的补偿路径的示意图。FIG. 6 is a schematic diagram illustrating a compensation path according to embodiments herein.

图7 是图示图2中的Pi类型开关式电阻器网络的等效电路的简化示意图。FIG. 7 is a simplified schematic diagram illustrating the equivalent circuit of the Pi-type switched resistor network in FIG. 2 .

图8 是示出根据本文中的一个实施例的衰减器的频率响应的图。Figure 8 is a graph showing the frequency response of an attenuator according to one embodiment herein.

图9 是示出根据本文中的另一个实施例的衰减器的频率响应的图。FIG. 9 is a graph showing the frequency response of an attenuator according to another embodiment herein.

图10 是示出根据本文中的实施例的补偿感应器的示例布局的图。FIG. 10 is a diagram illustrating an example layout of a compensation inductor according to embodiments herein.

图11是图示其中可实现本文中的实施例的电子装置的框图。11 is a block diagram illustrating an electronic device in which embodiments herein may be implemented.

具体实施方式Detailed ways

在图1中所示出的是根据本文中的实施例的用于衰减信号的衰减器100的总视图。衰减器100包括:具有正输入节点Inp和负输入节点Inn的差分输入端口Inp/Inn,用于接收信号,以及具有正输出节点Outp和负输出节点Outn的差分输出端口Outp/Outn,用于输出衰减的信号。Shown in FIG. 1 is a general view of an attenuator 100 for attenuating signals according to embodiments herein. The attenuator 100 includes a differential input port Inp/Inn having a positive input node Inp and a negative input node Inn for receiving signals, and a differential output port Outp/Outn having a positive output node Outp and a negative output node Outn for outputting attenuated signal.

衰减器100还包括:第一开关式电阻器网络102,连接在正输入节点Inp和正输出节点Outp之间,以及第二开关式电阻器网络104,连接在负输入节点Inn和负输出节点Outn之间。第一和第二开关式电阻器网络102/104配置成用于形成期望衰减。The attenuator 100 also includes a first switched resistor network 102 connected between the positive input node Inp and the positive output node Outp, and a second switched resistor network 104 connected between the negative input node Inn and the negative output node Outn between. The first and second switched resistor networks 102/104 are configured to form the desired attenuation.

衰减器100还包括一对补偿路径,用于第一和第二开关式电阻器网络102/104中的寄生漏电的消除。如图1中所示,第一补偿路径106在图1中称为中和补偿NC 106,连接在正输入节点Inp和负输出节点Outn之间,并且第二补偿路径108在图1中称为NC 108,连接在负输入节点Inn和正输出节点Outp之间。The attenuator 100 also includes a pair of compensation paths for the cancellation of parasitic leakage in the first and second switched resistor networks 102/104. As shown in FIG. 1, the first compensation path 106, referred to in FIG. 1 as neutralizing compensation NC 106, is connected between the positive input node Inp and the negative output node Outn, and the second compensation path 108 is referred to in FIG. 1 as NC 108, connected between the negative input node Inn and the positive output node Outp.

此外,衰减器100还包括控制电路110,用于产生用于控制第一和第二开关式电阻器网络102/104的控制信号。In addition, the attenuator 100 also includes a control circuit 110 for generating control signals for controlling the first and second switched resistor networks 102/104.

根据一些实施例,衰减器100中的控制电路110还可配置成用于产生用于控制该对补偿路径106/108的控制信号。According to some embodiments, the control circuit 110 in the attenuator 100 may also be configured to generate a control signal for controlling the pair of compensation paths 106/108.

控制信号CtrlS、CtrlP以及CtrlNC由控制电路110通过数字数据接口所产生。第一和第二开关式电阻器网络102/202由控制信号CtrlP和CtrlS所控制以便第一和第二开关式电阻器网络102/202的电阻值是可调的。控制信号CtrlNC用于控制补偿路径106/108。The control signals CtrlS, CtrlP and CtrlNC are generated by the control circuit 110 through the digital data interface. The first and second switched resistor networks 102/202 are controlled by control signals CtrlP and CtrlS so that the resistance values of the first and second switched resistor networks 102/202 are adjustable. The control signal CtrlNC is used to control the compensation paths 106/108.

根据一些实施例,衰减器100还可包括:第一对感应器L1a/L1b,连接在差分输入端口Inp/Inn,以及第二对感应器L2a/L2b,连接在差分输出端口Outp/Outn。在这些实施例中,第一和第二开关式电阻器网络102/104相应地通过第一和第二对感应器耦合到差分输入/输出端口。第一和第二对感应器L1a/L1b、L2a/L2b用于补偿衰减器100的带宽。根据一些实施例,第一和第二对感应器是相互耦合的感应器,分别具有耦合系数M1和M2。According to some embodiments, the attenuator 100 may further include: a first pair of inductors L1a/L1b connected to the differential input ports Inp/Inn, and a second pair of inductors L2a/L2b connected to the differential output ports Outp/Outn. In these embodiments, the first and second switched resistor networks 102/104 are coupled to the differential input/output ports through the first and second pairs of inductors, respectively. The first and second pairs of inductors L1a/L1b, L2a/L2b are used to compensate for the bandwidth of the attenuator 100 . According to some embodiments, the first and second pairs of inductors are mutually coupled inductors having coupling coefficients M1 and M2, respectively.

根据一个实施例,衰减器100可由图2中所示的电路所实现,其中第一和第二开关式电阻器网络102/104可由Pi类型开关式电阻器网络202/204所实现。According to one embodiment, the attenuator 100 may be implemented by the circuit shown in FIG. 2, wherein the first and second switched resistor networks 102/104 may be implemented by Pi-type switched resistor networks 202/204.

如图2中所示,每个Pi类型开关式电阻器网络202/204包括两个可开关式可变并联电阻器Rp和一个可开关式可变串联电阻器Rs。As shown in FIG. 2, each Pi-type switched resistor network 202/204 includes two switchable variable parallel resistors Rp and one switchable variable series resistor Rs.

根据一个实施例,衰减器100可由图3中所示的电路所实现,其中第一和第二开关式电阻器网络102/104可由T类型开关式电阻器网络302/304所实现。According to one embodiment, the attenuator 100 may be implemented by the circuit shown in FIG. 3, wherein the first and second switched resistor networks 102/104 may be implemented by a T-type switched resistor network 302/304.

如图3中所示,每个T类型开关式电阻器网络302/304包括一个可开关式可变并联电阻器Rp和两个可开关式可变串联电阻器Rs。As shown in FIG. 3, each T-type switched resistor network 302/304 includes one switchable variable parallel resistor Rp and two switchable variable series resistors Rs.

根据一些实施例,可开关式可变串联电阻器Rs可由图4中所示的电路所实现,其中图4(a)示出可开关式可变串联电阻器Rs的符号,图4(b)示出可开关式可变串联电阻器Rs的示例结构,以及图4(c)更详细地示出可开关式可变串联电阻器Rs的每一分支。According to some embodiments, the switchable variable series resistor Rs may be implemented by the circuit shown in FIG. 4 , where FIG. 4( a ) shows the symbol of the switchable variable series resistor Rs and FIG. 4( b ) An example structure of the switchable variable series resistor Rs is shown, and FIG. 4( c ) shows each branch of the switchable variable series resistor Rs in more detail.

如图4(b)中所示,可开关式可变串联电阻器Rs包括一个或多个开关式电阻器分支400、401、……、40n,该一个或多个开关式电阻器分支400、401、……、40n中的每个包括与开关串联的电阻器Rs0、Rs1、……、Rsn。可开关式可变串联电阻器Rs还包括旁路路径40b。As shown in FIG. 4(b), the switchable variable series resistor Rs includes one or more switched resistor branches 400, 401, . . . , 40n, the one or more switched resistor branches 400, 401, . Each of 401, . . ., 40n includes a resistor Rs 0 , Rs 1 , . . , Rs n in series with the switch. The switchable variable series resistor Rs also includes a bypass path 40b.

如图4(c)中所示,对于一个或多个开关,包括与电阻器串联的电容器的引导路径(bootstrap path)连接在开关的以下两者之间:栅极;以及漏极或源极,这取决于一个或多个开关的大小。使用引导路径能有效地提高开关线性。然而,对于更小大小的开关,可能不需要引导路径,例如,在分支400中,没有引导路径连接在开关Ts0的以下两者之间:栅极;以及漏极或源极。As shown in Figure 4(c), for one or more switches, a bootstrap path comprising a capacitor in series with a resistor is connected between: the gate; and the drain or source , depending on the size of one or more switches. Using a guide path can effectively improve switching linearity. However, for smaller sized switches, the guide paths may not be needed, eg, in branch 400, there are no guide paths connected between: the gate; and the drain or source of the switch Ts 0 .

如图4(c)中所示,旁路路径40b包括开关Tb,并且包括与电阻器Rb串联的电容器Cb的引导路径连接在开关Tb的以下两者之间:栅极;以及漏极或源极。As shown in Figure 4(c), bypass path 40b includes switch Tb, and a lead path including capacitor Cb in series with resistor Rb is connected between switch Tb: the gate; and the drain or source pole.

当可开关式可变串联电阻器Rs包括多个开关式电阻器分支400、401、……、40n时,由控制电路110所产生的控制信号CtrlS包括多个控制信号Ctrls0、Ctrls1、……、Ctrlsn,用于控制每个分支中的开关,其中n是正整数。控制信号CtrlS还包括Ctrlspass,用于控制旁路路径40b。When the switchable variable series resistor Rs includes a plurality of switchable resistor branches 400, 401, . . . , 40n, the control signal CtrlS generated by the control circuit 110 includes a plurality of control signals Ctrls0, Ctrls1, . . . Ctrlsn, which controls the switches in each branch, where n is a positive integer. The control signal CtrlS also includes Ctrlspass for controlling the bypass path 40b.

根据一些实施例,可开关式可变并联电阻器Rp可由图5中所示的电路所实现,其中图5(a)示出可开关式可变并联电阻器Rp的符号,图5(b)示出可开关式可变并联电阻器Rp的示例结构,以及图5(c)更详细地示出可开关式可变并联电阻器Rp的每一分支。According to some embodiments, the switchable variable shunt resistor Rp may be implemented by the circuit shown in FIG. 5 , where FIG. 5( a ) shows the symbol of the switchable variable shunt resistor Rp and FIG. 5( b ) An example structure of the switchable variable shunt resistor Rp is shown, and Figure 5(c) shows each branch of the switchable variable shunt resistor Rp in more detail.

如图5(b)中所示,可开关式可变并联电阻器Rp包括一个或多个开关式电阻器分支500、501、……、50m,以及可开关式可变并联电阻器Rp还包括与开关式电阻器分支500、501、……、50m串联连接的电阻器(RPb)。该一个或多个开关式电阻器分支500、501、……、50m中的每个包括与开关串联的电阻器Rp0、Rp1、……、RpmAs shown in Figure 5(b), the switchable variable parallel resistor Rp includes one or more switchable resistor branches 500, 501, . . . , 50m, and the switchable variable parallel resistor Rp also includes A resistor (RPb) connected in series with the switched resistor branches 500, 501, ..., 50m. Each of the one or more switched resistor branches 500, 501, ..., 50m includes a resistor Rpo , Rp 1 , ..., Rpm in series with the switch.

如图5(c)中所示,对于一个或多个开关,包括与电阻器串联的电容器的引导路径连接在开关的以下二者之间:栅极;以及漏极或源极,这取决于一个或多个开关的大小。例如,对于分支500中较小大小的开关Tp0,没有引导路径连接在开关Tp0的以下两者之间:栅极;以及漏极或源极。As shown in Figure 5(c), for one or more switches, a lead path including a capacitor in series with a resistor is connected between the switches: the gate; and the drain or source, depending on The size of one or more switches. For example, for the smaller sized switch Tp 0 in branch 500 , there is no lead path connecting between the following two of the switch Tp 0 : the gate; and the drain or source.

当可开关式可变并联电阻器Rp包括多个开关式电阻器分支500、501、……、50m时,由控制电路110所产生的控制信号CtrlP包括多个控制信号Ctrlp0、Ctrlp1、……、Ctrlpm,用于控制每个分支中的开关,其中m是正整数。When the switchable variable parallel resistor Rp includes a plurality of switchable resistor branches 500, 501, . . . , 50m, the control signal CtrlP generated by the control circuit 110 includes a plurality of control signals Ctrlp0, Ctrlp1, . . . Ctrlpm to control the switches in each branch, where m is a positive integer.

根据一些实施例,补偿路径106/108可由图6中所示的电路所实现,其中图6(a)示出补偿路径106/108的符号,图6(b)示出补偿路径106/108的示例结构,以及图6(c)示出补偿路径106/108的另一示例结构。如图6(b)和图6(c)中所示,每个补偿路径106/108包括一个或多个开关式电容器分支,以及每个开关式电容器分支包括与电阻器Rnc、Rnc0、Rnc1、……、Rnck串联连接的电容器Cnc、Cnc0、Cnc1、……、Cnck。在旁路模式中,用于消除寄生漏电的补偿路径可被切断以便减少插入损失。According to some embodiments, the compensation paths 106/108 may be implemented by the circuit shown in FIG. 6, wherein FIG. 6(a) shows the symbols of the compensation paths 106/108 and FIG. 6(b) shows the symbols of the compensation paths 106/108. Example structure, and Fig. 6(c) shows another example structure of compensation paths 106/108. As shown in Figures 6(b) and 6(c), each compensation path 106/108 includes one or more switched capacitor branches, and each switched capacitor branch includes and resistors Rnc, Rnc 0 , Rnc 1 , ..., Rnc k capacitors Cnc, Cnc 0 , Cnc 1 , ..., Cnc k connected in series. In bypass mode, the compensation path for eliminating parasitic leakage can be cut off in order to reduce insertion loss.

根据一些实施例,在补偿路径106/108中的每个开关式电容器分支还包括与电容器Cnc、Cnc0、Cnc1、……、Cnck和电阻器Rnc、Rnc0、Rnc1、……、Rnck串联连接的开关。According to some embodiments, each switched capacitor branch in the compensation path 106/108 further includes capacitors Cnc, Cnc 0 , Cnc 1 , . . . , Cnc k and resistors Rnc, Rnc 0 , Rnc 1 , . Rnck switches connected in series.

当补偿路径106/108包括多个开关式电容器分支时,控制信号CtrlNC包括多个控制信号Ctrlnck、……、Ctrlnc1、Ctrlnc0,用于控制每一分支中的开关,其中k是大于或等于0的整数。When the compensation path 106/108 includes multiple switched capacitor branches, the control signal CtrlNC includes multiple control signals Ctrlnck, . . . , Ctrlnc1, Ctrlnc0 for controlling the switches in each branch, where k is greater than or equal to 0 Integer.

下文描述根据本文中的实施例的衰减器100的实现细节、性能和优势。如上文所述,开关式电阻器网络102/104用于设置期望衰减。为了示出期望衰减和电阻器值之间的关系,得出示例设计公式用于Pi类型开关式电阻器网络202/204。在图7中示出没有补偿路径的Pi类型开关式电阻器网络202/204的简化等效电路,其中图7(a)示出Pi类型开关式电阻器网络202/204,以差分方式连接,以及图7(b)示出其单端部分。Implementation details, performance, and advantages of the attenuator 100 according to embodiments herein are described below. As described above, switched resistor networks 102/104 are used to set the desired attenuation. To illustrate the relationship between desired attenuation and resistor value, example design equations are derived for Pi-type switched resistor networks 202/204. A simplified equivalent circuit of the Pi-type switched resistor network 202/204 without the compensation path is shown in FIG. 7, where FIG. 7(a) shows the Pi-type switched resistor network 202/204, connected differentially, and Figure 7(b) shows its single-ended portion.

为了简明,分析图7(b)中以单端方式连接的Pi类型开关式电阻器网络202/204,其中输入和输出端口阻抗RL=50添加到其中。在用于与要求匹配的理想条件中,开关式电阻器网络202/204应该匹配输入和输出端口阻抗RL=50 ohm,即:For simplicity, analyze the Pi-type switched resistor network 202/204 connected in a single-ended manner in Figure 7(b), with the input and output port impedances RL =50 added to it. In ideal conditions for matching to the requirements, the switched resistor network 202/204 should match the input and output port impedances RL = 50 ohm, ie:

Figure DEST_PATH_IMAGE001
Figure DEST_PATH_IMAGE001

当在匹配条件中,电压增益vg由以下给出:When in matched conditions, the voltage gain vg is given by:

Figure DEST_PATH_IMAGE002
Figure DEST_PATH_IMAGE002

从匹配要求,给出:From matching requirements, given:

Figure DEST_PATH_IMAGE003
Figure DEST_PATH_IMAGE003

所以Rs可表示为:So Rs can be expressed as:

Figure DEST_PATH_IMAGE004
Figure DEST_PATH_IMAGE004

以(4)中的Rs表达式替代衰减或增益表达式(2)中的Rs,这给出:Substituting the Rs expression in (4) for Rs in the attenuation or gain expression (2), this gives:

Figure DEST_PATH_IMAGE005
Figure DEST_PATH_IMAGE005

其中

Figure DEST_PATH_IMAGE006
(对于理想纯电阻器情况)。in
Figure DEST_PATH_IMAGE006
(for the ideal pure resistor case).

Rp可写为期望衰减的函数:Rp can be written as a function of expected decay:

Figure DEST_PATH_IMAGE007
Figure DEST_PATH_IMAGE007

其中

Figure DEST_PATH_IMAGE008
,以及VG是以dB为单位的所要求或期望的衰减。in
Figure DEST_PATH_IMAGE008
, and VG is the required or desired attenuation in dB.

应该注意的是,以上公式是Pi类型开关式电阻器网络的示例设计公式,本领域技术人员将意识到,对于T类型开关式电阻器网络,设计公式将会不同。It should be noted that the above formula is an example design formula for a Pi type switched resistor network, those skilled in the art will realize that the design formula will be different for a T type switched resistor network.

回到图4,其中示出根据本文中的一个实施例的可开关式可变串联电阻器Rs的结构。如上文所述,如在图4(b)和图4(c)的底部的虚线框中所示,可开关式可变串联电阻器Rs包括旁路路径40b。当不需要衰减输入信号时,衰减器100设置成旁路模式以及所有开关式电阻器分支400、401、……、40n通过开启旁路路径40b中的开关Tb而被旁路。控制信号CtrlSpass在旁路模式期间设置成逻辑高。如图4(c)中所示,在旁路路径40b中,包括与电阻器Rb串联的电容器Cb的引导路径连接在开关Tb的以下两者之间:栅极;以及漏极或源极。电容器Cb的目的是用于通过使用在开关Tb的漏极或源极的输入信号来引导开关Tb的栅极电压,以及用于保持栅极和漏极或源极之间的电压接近由控制信号CtrlSpass提供的恒定DC电压。这意味MOS开关晶体管Tb的传导电阻器Ron接近常数,因此提高开关Tb的线性。插入于引导路径中的电阻器Rb用于避免增加信号路径中的电容性负荷,以及还减少由开关晶体管Tb的寄生电容引起的漏电。电阻器Rg是串联在控制节点和开关晶体管Tb的栅极之间的电阻器,并且RgCb的时间常数应该比最低操作频率的周期大得多。以此方式,实现较高频率的输入信号的较低插入损失。在其它衰减模式中,控制信号CtrlSpass设置成逻辑低,开关Tb被关断,然后旁路路径被断开。Returning to FIG. 4, there is shown the structure of the switchable variable series resistor Rs according to one embodiment herein. As described above, the switchable variable series resistor Rs includes the bypass path 40b as shown in the dashed box at the bottom of FIGS. 4(b) and 4(c). When there is no need to attenuate the input signal, the attenuator 100 is set to bypass mode and all switched resistor branches 400, 401, . . . , 40n are bypassed by opening switch Tb in bypass path 40b. The control signal CtrlSpass is set to logic high during bypass mode. As shown in Figure 4(c), in the bypass path 40b, a lead path including a capacitor Cb in series with a resistor Rb is connected between: the gate; and the drain or source of the switch Tb. The purpose of the capacitor Cb is to steer the gate voltage of the switch Tb by using the input signal at the drain or source of the switch Tb, and to keep the voltage between the gate and the drain or source close to that determined by the control signal Constant DC voltage provided by CtrlSpass. This means that the conduction resistor Ron of the MOS switch transistor Tb is close to constant, thus improving the linearity of the switch Tb. The resistor Rb inserted in the lead path is used to avoid increasing the capacitive load in the signal path, and also to reduce leakage caused by the parasitic capacitance of the switching transistor Tb. The resistor Rg is a resistor connected in series between the control node and the gate of the switching transistor Tb, and the time constant of RgCb should be much larger than the period of the lowest operating frequency. In this way, lower insertion loss for higher frequency input signals is achieved. In other decay modes, the control signal CtrlSpass is set to logic low, the switch Tb is turned off, and then the bypass path is disconnected.

开关式电阻器分支400、401、……、40n用于包含旁路模式的不同衰减设置。在旁路模式中,所有控制信号Ctrls0、Ctrls1、……、Ctrlsn设置成逻辑高,因此所有在开关式电阻器分支400、401、……、40n中的开关是传导的,这进一步减少插入损失。Switched resistor branches 400, 401, . . . , 40n are used to include different attenuation settings for bypass mode. In bypass mode, all control signals Ctrls0, Ctrls1, . .

当在其它衰减设置中,只有一些开关式电阻器分支400、401、……、40n传导,以及根据Eq.(4)所给出的表达式提供电阻值Rs。由于硅工艺变化,芯片上电阻器的电阻值可在范围±25%中变化。因此实际中,更多控制比特可添加用于调整电阻。When in other attenuation settings, only some of the switched resistor branches 400, 401, . . . , 40n conduct and provide the resistance value Rs according to the expression given by Eq. (4). Due to silicon process variations, the resistance values of on-chip resistors can vary in the range ±25%. So in practice, more control bits can be added to adjust the resistance.

开关式电阻器分支400、401、……、40n中的电阻器可设计为例如二进制加权(binary weighted)的大小,也就是Rs0=R、Rs1=R/2、……、Rsn=R/2n。对于开关式电阻器分支40n,其可视为单位电阻器单元R的并联的2n个分支。所以

Figure DEST_PATH_IMAGE009
是电阻最小的电阻器,以及开关
Figure DEST_PATH_IMAGE010
是大小最大的开关。增大
Figure 207989DEST_PATH_IMAGE010
的大小可减少开关
Figure 656288DEST_PATH_IMAGE010
传导电阻Ron的影响,以便提高线性,但代价是在信号路径中引入较大寄生电容。因此,如图4(c)中所示,在这里用于提高线性的引导路径对于较大大小的开关更有效。然而,对于较小大小的开关,引导路径可能不需要。如从图4(c)所见,对于开关式电阻器分支400,没有用于开关Ts0的引导路径。 The resistors in the switched resistor branches 400 , 401 , . R/2 n . For the switched resistor branch 40n, it can be viewed as 2n branches of the unit resistor cell R in parallel. so
Figure DEST_PATH_IMAGE009
is the smallest resistance resistor, and the switch
Figure DEST_PATH_IMAGE010
is the largest switch. increase
Figure 207989DEST_PATH_IMAGE010
size reduces switching
Figure 656288DEST_PATH_IMAGE010
The effect of conduction resistance Ron in order to improve linearity, but at the cost of introducing large parasitic capacitance in the signal path. Therefore, as shown in Fig. 4(c), the guide paths used here to improve linearity are more effective for larger size switches. However, for smaller sized switches, the bootstrap path may not be needed. As can be seen from Figure 4(c), for the switched resistor branch 400, there is no lead path for the switch Ts0 .

如图5中所示,对于可开关式可变并联电阻器Rp,二进制加权的电阻器还可用在开关式电阻器分支500、501、……、50m中。在旁路模式中,所有开关式电阻器分支被断开,所以最小化插入损失。As shown in FIG. 5, for the switchable variable parallel resistor Rp, binary weighted resistors can also be used in the switched resistor branches 500, 501, . . . , 50m. In bypass mode, all switched resistor branches are disconnected, so insertion loss is minimized.

在其它衰减模式中,Rp的值可根据Eq.(6)来被选择。如图5(c)中所示,取决于开关的大小还可选地使用引导路径,例如,引导路径用于开关式电阻器分支50m中的最大开关

Figure DEST_PATH_IMAGE011
,而对于开关式电阻器分支500中的最小开关Tp0,引导路径被忽略。In other decay modes, the value of Rp can be selected according to Eq. (6). As shown in Fig. 5(c), a pilot path is also optionally used depending on the size of the switch, eg a pilot path is used for the largest switch in the switched resistor branch 50m
Figure DEST_PATH_IMAGE011
, while for the smallest switch Tp 0 in the switched resistor branch 500 , the pilot path is ignored.

实际中,由于三个节点(也就是开关Tb的栅极、漏极和源极)之间的寄生电容,寄生漏电存在,并且这些漏电损害在深度衰减分级中的衰减设置。图8示出针对旁路模式和不同衰减分级的衰减水平Vs频率,其中期望衰减水平以实线绘制,而由于寄生电容导致的真实衰减水平以虚线绘制。可见,由于寄生电容导致的寄生漏电破坏期望衰减水平,特别是在较高频率。In practice, parasitic leakages exist due to parasitic capacitances between the three nodes (ie gate, drain and source of switch Tb), and these leakages impair the attenuation settings in deep attenuation stages. Figure 8 shows the attenuation level Vs frequency for bypass mode and different attenuation stages, where the desired attenuation level is plotted in solid lines and the actual attenuation level due to parasitic capacitance is plotted in dashed lines. It can be seen that parasitic leakage due to parasitic capacitance destroys the desired attenuation level, especially at higher frequencies.

如图1-3中所示,衰减器100是采用差分结构,这使得能够添加一对补偿路径NC106/108用于中和或消除漏电。通过交叉耦合该对补偿路径106/108来实现消除,也就是,第一补偿路径106连接在正输入节点Inp和负输出节点Outn之间,以及第二补偿路径108连接在负输入节点Inn和正输出节点Outp之间。以此方式,任何在正输入节点的漏电信号耦合至负输出节点,由此消除任何在负输出节点的漏电信号。以相同方式,任何在负输入节点的漏电信号耦合至正输出节点,由此消除任何在正输出节点的漏电信号。这样促成良好的衰减性能,特别是在高频率和在深度衰减分级中,如图8中的实线中所示,其中补偿之后所有分级的衰减水平的斜率是相同的。As shown in Figures 1-3, the attenuator 100 is of a differential configuration, which enables the addition of a pair of compensation paths NC 106/108 for neutralizing or eliminating leakage. Cancellation is achieved by cross-coupling the pair of compensation paths 106/108, that is, the first compensation path 106 is connected between the positive input node Inp and the negative output node Outn, and the second compensation path 108 is connected between the negative input node Inn and the positive output between nodes Outp. In this way, any leakage signal at the positive input node is coupled to the negative output node, thereby eliminating any leakage signal at the negative output node. In the same way, any leakage signal at the negative input node is coupled to the positive output node, thereby canceling any leakage signal at the positive output node. This results in good attenuation performance, especially at high frequencies and in deep attenuation stages, as shown in the solid line in Figure 8, where the slope of the attenuation level is the same for all stages after compensation.

如上文所述,补偿路径106/108包括一个或多个开关式电容器分支。如图6(b)中所示,当只有一个开关式电容器分支用于减少插入损失时,开关晶体管在旁路模式中被关断,因此补偿路径从开关式电阻器网络被断开。然而,应该注意的是,补偿路径中的开关晶体管是可选的,也就是,补偿路径可只包括电容器和电阻器,以及可一直连接至旁路模式中以及在其它衰减设置的开关式电阻器网络。As described above, the compensation paths 106/108 include one or more switched capacitor branches. As shown in Fig. 6(b), when only one switched capacitor branch is used to reduce insertion loss, the switching transistor is turned off in bypass mode, so the compensation path is disconnected from the switched resistor network. However, it should be noted that the switching transistors in the compensation path are optional, i.e. the compensation path may consist only of capacitors and resistors, and may be connected all the way to the switched resistors in bypass mode and other attenuation settings network.

图6(c)中,使用若干开关式电容器分支,因此这将给予更多的自由用于对不同衰减设置或者水平调节补偿。由于这是可编程的方法,这还可处理由于设计工具中对电容器值和电阻器值的不准确的提取而导致的设计误差以及工艺变化。In Figure 6(c), several switched capacitor branches are used, so this would give more freedom to adjust compensation for different attenuation settings or levels. Since this is a programmable approach, this also handles design errors and process variations due to inaccurate extraction of capacitor and resistor values in the design tool.

从图8可见的是,衰减水平具有沿着频率轴的斜率。这意味着在较高频率的插入损失高于在较低频率的插入损失,这致使衰减器的较窄的带宽。为了提高带宽,一对具有相互耦合的感应器可用在输入端口和输出端口。如图1-3中所示,第一对感应器L1a/L1b连接在差分输入端口Inp/Inn,用于在期望频率与输入寄生电容谐振,以及第二对感应器L2a/L2b连接在差分输出端口Outp/Outn用于在期望频率与输出寄生电容谐振。以此方式,降低衰减水平的斜率,以及扩大衰减器100的带宽。这在图9中图示,其中实曲线是频率响应,也就是,衰减水平Vs频率,具有感应器补偿,并且虚线是未补偿的频率响应。It can be seen from Figure 8 that the attenuation level has a slope along the frequency axis. This means that the insertion loss at higher frequencies is higher than at lower frequencies, which results in a narrower bandwidth of the attenuator. To increase the bandwidth, a pair of inductors with mutual coupling can be used at the input port and the output port. As shown in Figures 1-3, the first pair of inductors L1a/L1b are connected at the differential input ports Inp/Inn for resonating with the input parasitic capacitance at the desired frequency, and the second pair of inductors L2a/L2b are connected at the differential output Ports Outp/Outn are used to resonate with the output parasitic capacitance at the desired frequency. In this way, the slope of the attenuation level is reduced, and the bandwidth of the attenuator 100 is expanded. This is illustrated in Figure 9, where the solid curve is the frequency response, that is, attenuation level Vs frequency, with inductor compensation, and the dashed line is the uncompensated frequency response.

在图10中示出这两对相互耦合的感应器的示例布局,其中L1a/L1b和L2b/L2b的布局以交织方式设计,以便通过利用这两部分之间的相互感应以节省硅区域以及增加Q因子。当然其它类型的分离感应器也可被使用,但是代价是大的硅区域和稍多的插入损失。An example layout of these two pairs of mutually coupled inductors is shown in Figure 10, where the layouts of L1a/L1b and L2b/L2b are designed in an interleaved fashion to save silicon area and increase the Q factor. Of course other types of split inductors can be used, but at the expense of a large silicon area and slightly more insertion loss.

总结上文的论述,衰减器100的各种实施例的优势包含:Summarizing the discussion above, advantages of various embodiments of attenuator 100 include:

·准确的衰减水平或者分级:Pi或者T结构的开关式电阻器网络使电阻可调以及还可处理工艺变化,因此提供准确的衰减水平和分级。• Accurate attenuation levels or grading: The switched resistor network in Pi or T configuration enables adjustable resistance and also handles process variations, thus providing accurate attenuation levels and grading.

·更大的衰减范围:补偿路径用于消除寄生漏电以便在深度衰减的衰减水平或者分级更准确,因此衰减器100实现更大的衰减范围。• Larger attenuation range: The compensation path is used to eliminate parasitic leakage for more accurate attenuation levels or grading at deep attenuation, so the attenuator 100 achieves a larger attenuation range.

·更高线性和低插入损失:在一些实施例中引导路径用于较大大小的开关晶体管和用于旁路路径以便提高线性以及减少插入损失;· Higher linearity and low insertion loss: in some embodiments lead paths for larger sized switching transistors and for bypass paths to improve linearity and reduce insertion loss;

·宽带宽:在一些实施例中补偿感应器用在输入端口和输出端口,用于分别与输入和输出寄生电容谐振,所以扩大衰减器100的带宽。• Wide bandwidth: In some embodiments compensation inductors are used at the input port and output port to resonate with the input and output parasitic capacitances, respectively, thus expanding the bandwidth of the attenuator 100 .

根据本文中的实施例的衰减器100可用在各种电子装置中。图11示出电子装置1100的框图,电子装置1100可以是,例如无线电频率收发器、无线电频率前端、无线通信装置(比如用户设备或者移动装置和/或基站、无线电基站中的多天线系统)、或者任何通用电子电路或者设备(比如自动增益控制电路、测量设备等等)。电子装置1100可包括其它单元,其中示出处理单元1110,处理单元1110可与衰减器100中的控制电路110交互用于不同衰减设置或者操作模式。The attenuator 100 according to the embodiments herein may be used in various electronic devices. Figure 11 shows a block diagram of an electronic device 1100, which may be, for example, a radio frequency transceiver, a radio frequency front end, a wireless communication device (such as a user equipment or a mobile device and/or a base station, a multi-antenna system in a radio base station), Or any general purpose electronic circuit or device (such as automatic gain control circuits, measurement equipment, etc.). The electronic device 1100 may include other units, wherein a processing unit 1110 is shown, which may interact with the control circuit 110 in the attenuator 100 for different attenuation settings or modes of operation.

本领域技术人员将理解,虽然图4-6中所示的衰减器100的补偿路径104/106、旁路路径40b以及开关式电阻器阵列Rs、Rp中的开关晶体管是场效应晶体管(FET),但是任何其它类型的晶体管例如金属氧化物半导体FET(MOSFET)、结FET(JFET)、双极结晶体管(BJT)等可包括在衰减器100中。当使用词语“包括”时,其应该解释为非限制的,也就是意味着“至少由……组成”。Those skilled in the art will understand that although the compensation paths 104/106, the bypass path 40b, and the switching transistors in the switched resistor arrays Rs, Rp of the attenuator 100 shown in FIGS. 4-6 are field effect transistors (FETs) , but any other types of transistors such as metal oxide semiconductor FETs (MOSFETs), junction FETs (JFETs), bipolar junction transistors (BJTs), etc. may be included in the attenuator 100 . When the word "comprising" is used, it should be construed as non-limiting, that is, it means "consisting of at least".

本文中的实施例不限制于上文所述的优选实施例。各种可替代方案、修改和等同方案可被使用。因此,上文实施例不应该视为限制由附上的权利要求所限定的本发明的范围。The embodiments herein are not limited to the preferred embodiments described above. Various alternatives, modifications and equivalents can be used. Accordingly, the above embodiments should not be considered as limiting the scope of the invention, which is defined by the appended claims.

Claims (23)

1.一种用于衰减信号的衰减器(100),包括:1. An attenuator (100) for attenuating a signal, comprising: 具有正输入节点(Inp)和负输入节点(Inn)的差分输入端口(Inp;Inn),用于接收所述信号;a differential input port (Inp; Inn) having a positive input node (Inp) and a negative input node (Inn) for receiving said signal; 具有正输出节点(Outp)和负输出节点(Outn)的差分输出端口(Outp;Outn),用于输出衰减的信号;A differential output port (Outp; Outn) with a positive output node (Outp) and a negative output node (Outn) for outputting attenuated signals; 第一开关式电阻器网络(102),连接在所述正输入节点(Inp)和所述正输出节点(Outp)之间;a first switched resistor network (102) connected between the positive input node (Inp) and the positive output node (Outp); 第二开关式电阻器网络(104),连接在所述负输入节点(Inn)和所述负输出节点(Outn)之间;a second switched resistor network (104) connected between the negative input node (Inn) and the negative output node (Outn); 一对补偿路径,用于所述第一和第二开关式电阻器网络(102;104)中的寄生漏电的消除,其中第一补偿路径(106)连接在所述正输入节点(Inp)和所述负输出节点(Outn)之间,以及第二补偿路径(108)连接在所述负输入节点(Inn)和所述正输出节点(Outp)之间;以及a pair of compensation paths for cancellation of parasitic leakage in said first and second switched resistor networks (102; 104), wherein a first compensation path (106) is connected between said positive input node (Inp) and between said negative output nodes (Outn), and a second compensation path (108) is connected between said negative input node (Inn) and said positive output node (Outp); and 控制电路(110),用于产生用于控制所述第一和第二开关式电阻器网络(102;104)的控制信号。A control circuit (110) for generating control signals for controlling the first and second switched resistor networks (102; 104). 2.如权利要求1所述的衰减器(100),其中所述衰减器(100)还包括在所述差分输入端口(Inp;Inn)连接的第一对感应器(L1a;L1b)以及在所述差分输出端口(Outp;Outn)连接的第二对感应器(L2a;L2b)。2. The attenuator (100) of claim 1, wherein the attenuator (100) further comprises a first pair of inductors (L1a; L1b) connected at the differential input ports (Inp; Inn) and at The second pair of inductors (L2a; L2b) connected to the differential output ports (Outp; Outn). 3.如权利要求1-2任一项所述的衰减器(100),其中所述控制电路(110)还配置用于产生用于控制所述一对补偿路径(106;108)的控制信号。3. The attenuator (100) of any of claims 1-2, wherein the control circuit (110) is further configured to generate a control signal for controlling the pair of compensation paths (106; 108) . 4.如权利要求1-2任一项所述的衰减器(100),其中所述第一和第二开关式电阻器网络(102;104)中的每个是Pi类型电阻器网络(202;204),所述Pi类型电阻器网络(202;204)包括两个可开关式可变并联电阻器(Rp)以及一个可开关式可变串联电阻器(Rs)。4. The attenuator (100) of any of claims 1-2, wherein each of the first and second switched resistor networks (102; 104) is a Pi-type resistor network (202) 204), the Pi-type resistor network (202; 204) includes two switchable variable parallel resistors (Rp) and one switchable variable series resistor (Rs). 5.如权利要求1-2任一项所述的衰减器(100),其中所述第一和第二开关式电阻器网络(102;104)中的每个是T类型电阻器网络(302;304),所述T类型电阻器网络(302;304)包括一个可开关式可变并联电阻器(Rp)以及两个可开关式可变串联电阻器(Rs)。5. The attenuator (100) of any of claims 1-2, wherein each of the first and second switched resistor networks (102; 104) is a T-type resistor network (302) 304), the T-type resistor network (302; 304) includes a switchable variable parallel resistor (Rp) and two switchable variable series resistors (Rs). 6.如权利要求4所述的衰减器(100),其中所述可开关式可变串联电阻器(Rs)包括一个或多个开关式电阻器分支(400、401、……、40n)以及旁路路径(40b)。6. The attenuator (100) of claim 4, wherein the switchable variable series resistor (Rs) comprises one or more switched resistor branches (400, 401, . . . , 40n) and Bypass path (40b). 7.如权利要求5所述的衰减器(100),其中所述可开关式可变串联电阻器(Rs)包括一个或多个开关式电阻器分支(400、401、……、40n)以及旁路路径(40b)。7. The attenuator (100) of claim 5, wherein the switchable variable series resistor (Rs) comprises one or more switched resistor branches (400, 401, . . . , 40n) and Bypass path (40b). 8.如权利要求6所述的衰减器(100),其中所述旁路路径(40b)包括开关(Tb),以及其中包括与电阻器(Rb)串联的电容器(Cb)的引导路径连接在所述开关(Tb)的以下两者之间:栅极;以及漏极或者源极。8. The attenuator (100) of claim 6, wherein the bypass path (40b) comprises a switch (Tb), and wherein the lead path comprising a capacitor (Cb) in series with a resistor (Rb) is connected at Between the following two of the switch (Tb): gate; and drain or source. 9.如权利要求7所述的衰减器(100),其中所述旁路路径(40b)包括开关(Tb),以及其中包括与电阻器(Rb)串联的电容器(Cb)的引导路径连接在所述开关(Tb)的以下两者之间:栅极;以及漏极或者源极。9. The attenuator (100) of claim 7, wherein the bypass path (40b) comprises a switch (Tb), and wherein the lead path comprising a capacitor (Cb) in series with a resistor (Rb) is connected at Between the following two of the switch (Tb): gate; and drain or source. 10.如权利要求4所述的衰减器(100),其中所述可开关式可变并联电阻器(Rp)包括与电阻器(RPb)串联连接的一个或多个开关式电阻器分支(500、501、……、50m)。10. The attenuator (100) of claim 4, wherein the switchable variable parallel resistor (Rp) comprises one or more switched resistor branches (500) connected in series with a resistor (RPb) , 501, ..., 50m). 11.如权利要求5所述的衰减器(100),其中所述可开关式可变并联电阻器(Rp)包括与电阻器(RPb)串联连接的一个或多个开关式电阻器分支(500、501、……、50m)。11. The attenuator (100) of claim 5, wherein the switchable variable parallel resistor (Rp) comprises one or more switched resistor branches (500) connected in series with a resistor (RPb) , 501, ..., 50m). 12.如权利要求6所述的衰减器(100),其中所述一个或多个开关式电阻器分支(400、401、……、40n;500、501、……、50m)中的每个包括与开关串联的电阻器,以及其中对于一个或多个开关,取决于所述一个或多个开关的大小,包括与电阻器串联的电容器的引导路径连接在所述开关的以下两者之间:栅极;以及漏极或者源极。12. The attenuator (100) of claim 6, wherein each of the one or more switched resistor branches (400, 401, ..., 40n; 500, 501, ..., 50m) comprising a resistor in series with the switch, and wherein for one or more switches, depending on the size of the one or more switches, a lead path comprising a capacitor in series with the resistor is connected between the following two of the switches : gate; and drain or source. 13.如权利要求7所述的衰减器(100),其中所述一个或多个开关式电阻器分支(400、401、……、40n;500、501、……、50m)中的每个包括与开关串联的电阻器,以及其中对于一个或多个开关,取决于所述一个或多个开关的大小,包括与电阻器串联的电容器的引导路径连接在所述开关的以下两者之间:栅极;以及漏极或者源极。13. The attenuator (100) of claim 7, wherein each of the one or more switched resistor branches (400, 401, ..., 40n; 500, 501, ..., 50m) comprising a resistor in series with the switch, and wherein for one or more switches, depending on the size of the one or more switches, a lead path comprising a capacitor in series with the resistor is connected between the following two of the switches : gate; and drain or source. 14.如权利要求8所述的衰减器(100),其中所述一个或多个开关式电阻器分支(400、401、……、40n;500、501、……、50m)中的每个包括与开关串联的电阻器,以及其中对于一个或多个开关,取决于所述一个或多个开关的大小,包括与电阻器串联的电容器的引导路径连接在所述开关的以下两者之间:栅极;以及漏极或者源极。14. The attenuator (100) of claim 8, wherein each of the one or more switched resistor branches (400, 401, ..., 40n; 500, 501, ..., 50m) comprising a resistor in series with the switch, and wherein for one or more switches, depending on the size of the one or more switches, a lead path comprising a capacitor in series with the resistor is connected between the following two of the switches : gate; and drain or source. 15.如权利要求9所述的衰减器(100),其中所述一个或多个开关式电阻器分支(400、401、……、40n;500、501、……、50m)中的每个包括与开关串联的电阻器,以及其中对于一个或多个开关,取决于所述一个或多个开关的大小,包括与电阻器串联的电容器的引导路径连接在所述开关的以下两者之间:栅极;以及漏极或者源极。15. The attenuator (100) of claim 9, wherein each of the one or more switched resistor branches (400, 401, ..., 40n; 500, 501, ..., 50m) comprising a resistor in series with the switch, and wherein for one or more switches, depending on the size of the one or more switches, a lead path comprising a capacitor in series with the resistor is connected between the following two of the switches : gate; and drain or source. 16.如权利要求10所述的衰减器(100),其中所述一个或多个开关式电阻器分支(400、401、……、40n;500、501、……、50m)中的每个包括与开关串联的电阻器,以及其中对于一个或多个开关,取决于所述一个或多个开关的大小,包括与电阻器串联的电容器的引导路径连接在所述开关的以下两者之间:栅极;以及漏极或者源极。16. The attenuator (100) of claim 10, wherein each of the one or more switched resistor branches (400, 401, ..., 40n; 500, 501, ..., 50m) comprising a resistor in series with the switch, and wherein for one or more switches, depending on the size of the one or more switches, a lead path comprising a capacitor in series with the resistor is connected between the following two of the switches : gate; and drain or source. 17.如权利要求11所述的衰减器(100),其中所述一个或多个开关式电阻器分支(400、401、……、40n;500、501、……、50m)中的每个包括与开关串联的电阻器,以及其中对于一个或多个开关,取决于所述一个或多个开关的大小,包括与电阻器串联的电容器的引导路径连接在所述开关的以下两者之间:栅极;以及漏极或者源极。17. The attenuator (100) of claim 11, wherein each of the one or more switched resistor branches (400, 401, ..., 40n; 500, 501, ..., 50m) comprising a resistor in series with the switch, and wherein for one or more switches, depending on the size of the one or more switches, a lead path comprising a capacitor in series with the resistor is connected between the following two of the switches : gate; and drain or source. 18.如权利要求1-2任一项所述的衰减器(100),其中所述一对补偿路径(106;108)中的每个包括一个或多个开关式电容器分支,以及每个开关式电容器分支包括与电阻器(Rnc)串联连接的电容器(Cnc)。18. The attenuator (100) of any of claims 1-2, wherein each of the pair of compensation paths (106; 108) comprises one or more switched capacitor branches, and each switch The type capacitor branch includes a capacitor (Cnc) connected in series with a resistor (Rnc). 19.如权利要求18所述的衰减器(100),其中所述开关式电容器分支中的每个还包括与所述电容器(Cnc)和所述电阻器(Rnc)串联连接的开关。19. The attenuator (100) of claim 18, wherein each of the switched capacitor branches further comprises a switch connected in series with the capacitor (Cnc) and the resistor (Rnc). 20.如权利要求2所述的衰减器(100),其中所述第一和第二对感应器是互相耦合的感应器。20. The attenuator (100) of claim 2, wherein the first and second pairs of inductors are mutually coupled inductors. 21.一种电子装置(1100),包括如权利要求1-20任一项所述的衰减器(100)。21. An electronic device (1100) comprising the attenuator (100) of any of claims 1-20. 22.如权利要求21所述的电子装置(1100),其中所述电子装置(1100)是收发器。22. The electronic device (1100) of claim 21, wherein the electronic device (1100) is a transceiver. 23.如权利要求21所述的电子装置(1100),其中所述电子装置(1100)是无线电基站。23. The electronic device (1100) of claim 21, wherein the electronic device (1100) is a radio base station.
CN201480083798.9A 2014-12-03 2014-12-03 Attenuator Active CN107005216B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/076394 WO2016086984A1 (en) 2014-12-03 2014-12-03 An attenuator

Publications (2)

Publication Number Publication Date
CN107005216A CN107005216A (en) 2017-08-01
CN107005216B true CN107005216B (en) 2020-06-05

Family

ID=52016061

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480083798.9A Active CN107005216B (en) 2014-12-03 2014-12-03 Attenuator

Country Status (6)

Country Link
US (2) US10305450B2 (en)
EP (1) EP3228005B1 (en)
KR (1) KR101953496B1 (en)
CN (1) CN107005216B (en)
MX (1) MX364580B (en)
WO (1) WO2016086984A1 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6809147B2 (en) * 2016-11-07 2021-01-06 富士通株式会社 Variable attenuation device, variable attenuation device with phase switching function, and phase shifter
CN108023572A (en) * 2017-11-16 2018-05-11 北京遥感设备研究所 A kind of low difference CMOS difference numerical-control attenuators
WO2019196119A1 (en) * 2018-04-13 2019-10-17 华为技术有限公司 Signal attenuation network and wireless signal receiver
US10284394B1 (en) * 2018-08-10 2019-05-07 Inphi Corporation Input termination circuits for high speed receivers
US11431531B2 (en) 2020-03-18 2022-08-30 Qualcomm Incorporated Termination for high-frequency transmission lines
US12113500B2 (en) * 2020-12-23 2024-10-08 Intel Corporation Attenuator circuit, receiver, base station, mobile device and method for operating an attenuator circuit
US11923819B2 (en) 2021-06-22 2024-03-05 Mediatek Singapore Pte. Ltd. Wideband signal attenuator
CN113608000B (en) * 2021-07-19 2023-03-28 深圳麦科信科技有限公司 Differential circuit, differential probe and oscilloscope assembly
CN114726340B (en) * 2021-12-14 2024-11-08 东南大学 An active attenuator circuit
US20240243736A1 (en) * 2023-01-18 2024-07-18 Mediatek Inc. Digital step attenuator with a diversion circuit for high-frequency signal
CN119945379B (en) * 2025-01-08 2025-11-04 中山大学 MOS attenuator based on transistor parasitic capacitance compensation phase and control method
CN119447755B (en) * 2025-01-13 2025-05-06 成都威频科技有限公司 A microwave program-controlled step attenuator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1109228A (en) * 1993-09-30 1995-09-27 索尼公司 Attenuator circuit apparatus
US5493246A (en) * 1994-09-06 1996-02-20 Motorola, Inc. Circuit and method of canceling leakage current in an analog array
US7869312B1 (en) * 2006-06-07 2011-01-11 Marvell International Ltd. Calibration based DC coupled analog front end for optical storage system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3646484A (en) * 1970-07-08 1972-02-29 Us Army Diode-switched rf attenuator
US4468749A (en) * 1980-08-20 1984-08-28 Fujitsu Limited Adjustable attenuator circuit
US4574250A (en) * 1981-10-13 1986-03-04 Intel Corporation Switched capacitor filter utilizing a differential input and output circuit and method
US6667669B2 (en) * 2002-04-02 2003-12-23 Northrop Grumman Corporation Differential pin diode attenuator
US7242267B2 (en) 2003-10-29 2007-07-10 Broadcom Corporation Interpolating programmable gain attenuator
TWI418802B (en) 2008-07-09 2013-12-11 Analog Devices Inc Comprehensive front-end for instrumentation system
KR101070016B1 (en) * 2009-08-10 2011-10-04 한국과학기술원 Gain controllerable vector modulator
US9100046B2 (en) 2011-08-17 2015-08-04 Rf Micro Devices, Inc. Digital step attenuator utilizing thermometer encoded multi-bit attenuator stages

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1109228A (en) * 1993-09-30 1995-09-27 索尼公司 Attenuator circuit apparatus
US5493246A (en) * 1994-09-06 1996-02-20 Motorola, Inc. Circuit and method of canceling leakage current in an analog array
US7869312B1 (en) * 2006-06-07 2011-01-11 Marvell International Ltd. Calibration based DC coupled analog front end for optical storage system

Also Published As

Publication number Publication date
MX2017006985A (en) 2017-08-24
KR20170087512A (en) 2017-07-28
US10630264B2 (en) 2020-04-21
US20180337659A1 (en) 2018-11-22
CN107005216A (en) 2017-08-01
EP3228005B1 (en) 2018-08-15
US10305450B2 (en) 2019-05-28
MX364580B (en) 2019-05-02
WO2016086984A1 (en) 2016-06-09
US20190280672A1 (en) 2019-09-12
EP3228005A1 (en) 2017-10-11
KR101953496B1 (en) 2019-02-28

Similar Documents

Publication Publication Date Title
CN107005216B (en) Attenuator
US10116470B2 (en) Combined low and high frequency continuous-time linear equalizers
US7956687B2 (en) Constant-bandwidth variable gain amplifier
CN101834567B (en) Broadband gain adjustable low-noise amplifier
CN102498660B (en) Mixer circuits, integrated circuits and radio frequency communication units
CN101272131B (en) amplifying circuit and method for amplifying signal
CN107743686B (en) RF Switch with Bypass Topology
CN111727560B (en) Drain-Shared Split LNA
CN109863694B (en) Low noise amplifier with phase programmable gain stage
US8823458B2 (en) Circuit and power amplifier
JP4220694B2 (en) High frequency variable gain amplifier
US7605655B2 (en) Highly linear differential amplifier with a novel resistive source degeneration network
WO2025123940A1 (en) Gain-adjustable linear low-noise amplifier
CN107026621B (en) Power Amplifier Systems and Associated Biasing Circuits
CN103281038B (en) Wideband low noise amplifier
US11296659B2 (en) Switchless bi-directional amplifier using neutralized differential pair
CN101507110B (en) Switch-less bidirectional amplifier
CN111434038B (en) Combined mixer and filter circuit
US20250233564A1 (en) System and method for cross-coupled rc networks for use in differential amplifiers and other circuits
US8847687B2 (en) Multi-path broadband amplifier
CN113508525A (en) Multiresonant Networks for Amplifiers
CN111434034B (en) Passband frequency adjustable differential cascode amplifier for optical communications
Chen et al. A design approach for SiGe low-noise amplifiers using wideband input matching
WO2008043843A1 (en) Electronically adjustable gain slope controller circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant