CN107005216B - Attenuator - Google Patents
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- CN107005216B CN107005216B CN201480083798.9A CN201480083798A CN107005216B CN 107005216 B CN107005216 B CN 107005216B CN 201480083798 A CN201480083798 A CN 201480083798A CN 107005216 B CN107005216 B CN 107005216B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/24—Frequency-independent attenuators
- H03H11/245—Frequency-independent attenuators using field-effect transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
- H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
- H03G1/0094—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated using switched capacitors
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
- H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
- H04B7/06—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
- H04B7/0602—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using antenna switching
- H04B7/0608—Antenna selection according to transmission parameters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G2201/00—Indexing scheme relating to subclass H03G
- H03G2201/10—Gain control characterised by the type of controlled element
- H03G2201/106—Gain control characterised by the type of controlled element being attenuating element
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Abstract
Description
技术领域technical field
本文中的实施例涉及用于衰减信号的衰减器。具体地,实施例涉及用于在电子装置中衰减无线电频率信号的无线电频率宽带分级衰减器(step attenuator)。Embodiments herein relate to attenuators for attenuating signals. In particular, embodiments relate to radio frequency broadband step attenuators for attenuating radio frequency signals in electronic devices.
背景技术Background technique
衰减器是用于连续或者逐步控制信号的幅度的电路。当信号由衰减器逐步控制的时候,衰减器称为分级衰减器。衰减器或者分级衰减器广泛运用在各种电子装置中,各种电子装置的示例如下:在无线通信装置(包含例如用于通信和定位的无线电基站中的多天线系统、用户设备或者移动装置和基站)中的、还有在其它通用电子电路和设备(比如自动增益控制电路和测量设备等)中的、无线电频率收发器或者无线电频率前端。对于无线电频率前端,以互补金属氧化物半导体(CMOS)技术设计的芯片上分级衰减器具有小尺寸、低成本、灵活和高集成水平等优势。有一些对设计芯片上分级衰减器的要求,比如衰减分级中的良好线性、低插入损失、宽带宽以及精准度等。An attenuator is a circuit used to continuously or stepwise control the amplitude of a signal. When the signal is gradually controlled by an attenuator, the attenuator is called a step attenuator. Attenuators or graded attenuators are widely used in various electronic devices, examples of which are as follows: in wireless communication devices (including, for example, multi-antenna systems in radio base stations for communication and positioning, user equipment or mobile devices and base stations), as well as in other general-purpose electronic circuits and equipment (such as automatic gain control circuits and measurement equipment, etc.), radio frequency transceivers or radio frequency front-ends. For radio frequency front ends, on-chip graded attenuators designed in complementary metal-oxide-semiconductor (CMOS) technology offer the advantages of small size, low cost, flexibility, and high levels of integration. There are some requirements for designing on-chip stepped attenuators, such as good linearity, low insertion loss, wide bandwidth, and accuracy in the attenuation step.
在Cheng,W. et al, A Wideband IM3 Cancellation Technique for CMOSAttenuators, IEEE International Solid-State Circuits Conference, 2012以及在Cheng,W. et al, A Wideband IM3 Cancellation Technique for CMOS π- and T-Attenuators, IEEE Journal of Solid-State Circuits, 2013, Vol. 48, NO. 2中,所公开的芯片上Pi类型和T类型分级衰减器提供6、12、18和24dB的衰减分级。然而,所公开的Pi类型和T类型分级衰减器,当工作在较低衰减模式时,也就是当衰减水平较低、比如6或12dB的衰减分级的时候,特别是当不需要衰减的时候,具有大的插入损失。高插入损失将减少输入信号的要求的信噪比(SNR)和增益。此外,所公开的Pi类型和T类型分级衰减器还承受开关漏电,开关漏电损害在深度衰减模式期间在高频率的输入信号的衰减水平。In Cheng, W. et al, A Wideband IM3 Cancellation Technique for CMOSAttenuators, IEEE International Solid-State Circuits Conference , 2012 and in Cheng, W. et al, A Wideband IM3 Cancellation Technique for CMOS π- and T-Attenuators, IEEE Journal of Solid-State Circuits , 2013, Vol. 48, NO. 2, the disclosed on-chip Pi-type and T-type stepped attenuators provide 6, 12, 18, and 24 dB of attenuation steps. However, the disclosed Pi-type and T-type stepped attenuators, when operating in a lower attenuation mode, that is, when the attenuation level is low, such as an attenuation step of 6 or 12 dB, especially when no attenuation is required, has a large insertion loss. A high insertion loss will reduce the required signal-to-noise ratio (SNR) and gain of the input signal. In addition, the disclosed Pi-type and T-type stepped attenuators also suffer from switching leakage that impairs the attenuation level of the input signal at high frequencies during the deep attenuation mode.
在Xiao, J. et al, A High Dynamic Range CMOS Variable Gain Amplifierfor Mobile DTV Tuner, IEEE Journalof Solid-State Circuits, 2007, Vol. 42, No.2中,呈现适合移动数字电视(DTV)调谐器的可变增益放大器。可变增益通过使用电容性衰减器和电流导引跨导级而实现。虽然所呈现的可变增益放大器提供增益和衰减,但是由于有源装置也就是跨导级而导致其线性不良。不良线性将导致无线电频率前端的不良频率选择性,以及因此使所要求的SNR降级,这是由于来自其它无用频率信号的干扰而造成。In Xiao, J. et al, A High Dynamic Range CMOS Variable Gain Amplifier for Mobile DTV Tuner, IEEE Journalof Solid-State Circuits , 2007, Vol. 42, No.2, presented a possible solution for mobile digital television (DTV) tuners variable gain amplifier. Variable gain is achieved using capacitive attenuators and current steering transconductance stages. Although the variable gain amplifier presented provides gain and attenuation, it suffers from poor linearity due to the active device, ie, the transconductance stage. Poor linearity will result in poor frequency selectivity of the radio frequency front end, and thus degrade the required SNR, due to interference from other unwanted frequency signals.
发明内容SUMMARY OF THE INVENTION
因此本文中的实施例的目的是提供具有改善性能的衰减器。It is therefore an object of embodiments herein to provide attenuators with improved performance.
根据本文中的实施例的一个方面,通过用于衰减信号的衰减器实现目的。衰减器包括:具有正输入节点和负输入节点的差分输入端口,用于接收信号;以及具有正输出节点和负输出节点的差分输出端口,用于输出衰减的信号。衰减器还包括:第一开关式电阻器网络,连接在正输入节点和正输出节点之间;以及第二开关式电阻器网络,连接在负输入节点和负输出节点之间。衰减器还包括一对补偿路径,用于第一和第二开关式电阻器网络中的寄生漏电的消除。该对补偿路径连接成使得:第一补偿路径连接在正输入节点和负输出节点之间,以及第二补偿路径连接在负输入节点和正输出节点之间。衰减器还包括控制电路,用于产生用于控制第一和第二开关式电阻器网络的控制信号。According to one aspect of the embodiments herein, the object is achieved by an attenuator for attenuating a signal. The attenuator includes: a differential input port having a positive input node and a negative input node for receiving a signal; and a differential output port having a positive output node and a negative output node for outputting the attenuated signal. The attenuator also includes: a first switched resistor network connected between the positive input node and the positive output node; and a second switched resistor network connected between the negative input node and the negative output node. The attenuator also includes a pair of compensation paths for cancellation of parasitic leakage in the first and second switched resistor networks. The pair of compensation paths are connected such that the first compensation path is connected between the positive input node and the negative output node, and the second compensation path is connected between the negative input node and the positive output node. The attenuator also includes a control circuit for generating a control signal for controlling the first and second switched resistor networks.
由于根据本文中的实施例的衰减器使用该对补偿路径,因此在第一和第二开关式电阻器网络中的寄生漏电被消除。通过交叉耦合该对补偿路径而实现该消除,也就是,第一补偿路径连接在正输入节点和负输出节点之间,以及第二补偿路径连接在负输入节点和正输出节点之间。以此方式,任何在正输入节点的漏电信号耦合至负输出节点,以便消除任何在负输出节点的漏电信号。以相同方式,任何在负输入节点的漏电信号耦合至正输出节点,以便消除任何在正输出节点的漏电信号。这样促成良好的衰减性能,特别是在高频率和在深度衰减分级中。此外,开关式电阻器网络是无源的以及因此具有高线性。Since the attenuator according to embodiments herein uses the pair of compensation paths, parasitic leakage in the first and second switched resistor networks is eliminated. The cancellation is achieved by cross-coupling the pair of compensation paths, that is, a first compensation path is connected between the positive input node and the negative output node, and a second compensation path is connected between the negative input node and the positive output node. In this way, any leakage signal at the positive input node is coupled to the negative output node so as to cancel any leakage signal at the negative output node. In the same way, any leakage signal at the negative input node is coupled to the positive output node so as to cancel any leakage signal at the positive output node. This results in good attenuation performance, especially at high frequencies and in deep attenuation stages. Furthermore, the switched resistor network is passive and therefore highly linear.
因此,本文中的实施例提供比如关于在高频率和在深度衰减分级中的衰减水平和线性等方面具有改善性能的衰减器。Accordingly, embodiments herein provide attenuators with improved performance, such as with respect to attenuation levels and linearity at high frequencies and in deep attenuation stages.
附图说明Description of drawings
参考附图来更详细地描述本文中的实施例的示例,其中:Examples of embodiments herein are described in greater detail with reference to the accompanying drawings, in which:
图1 是根据本文中的实施例的衰减器的总框图。FIG. 1 is a general block diagram of an attenuator according to embodiments herein.
图2 是图示根据本文中的实施例的具有Pi类型开关式电阻器网络的衰减器的示意框图。Figure 2 is a schematic block diagram illustrating an attenuator with a Pi-type switched resistor network according to embodiments herein.
图3 是图示根据本文中的实施例的具有T类型开关式电阻器网络的衰减器的示意框图。Figure 3 is a schematic block diagram illustrating an attenuator with a T-type switched resistor network according to embodiments herein.
图4 是图示根据本文中的实施例的可开关式可变串联电阻器的示意图。FIG. 4 is a schematic diagram illustrating a switchable variable series resistor according to embodiments herein.
图5 是图示根据本文中的实施例的可开关式可变并联电阻器的示意图。5 is a schematic diagram illustrating a switchable variable shunt resistor according to embodiments herein.
图6 是图示根据本文中的实施例的补偿路径的示意图。FIG. 6 is a schematic diagram illustrating a compensation path according to embodiments herein.
图7 是图示图2中的Pi类型开关式电阻器网络的等效电路的简化示意图。FIG. 7 is a simplified schematic diagram illustrating the equivalent circuit of the Pi-type switched resistor network in FIG. 2 .
图8 是示出根据本文中的一个实施例的衰减器的频率响应的图。Figure 8 is a graph showing the frequency response of an attenuator according to one embodiment herein.
图9 是示出根据本文中的另一个实施例的衰减器的频率响应的图。FIG. 9 is a graph showing the frequency response of an attenuator according to another embodiment herein.
图10 是示出根据本文中的实施例的补偿感应器的示例布局的图。FIG. 10 is a diagram illustrating an example layout of a compensation inductor according to embodiments herein.
图11是图示其中可实现本文中的实施例的电子装置的框图。11 is a block diagram illustrating an electronic device in which embodiments herein may be implemented.
具体实施方式Detailed ways
在图1中所示出的是根据本文中的实施例的用于衰减信号的衰减器100的总视图。衰减器100包括:具有正输入节点Inp和负输入节点Inn的差分输入端口Inp/Inn,用于接收信号,以及具有正输出节点Outp和负输出节点Outn的差分输出端口Outp/Outn,用于输出衰减的信号。Shown in FIG. 1 is a general view of an
衰减器100还包括:第一开关式电阻器网络102,连接在正输入节点Inp和正输出节点Outp之间,以及第二开关式电阻器网络104,连接在负输入节点Inn和负输出节点Outn之间。第一和第二开关式电阻器网络102/104配置成用于形成期望衰减。The
衰减器100还包括一对补偿路径,用于第一和第二开关式电阻器网络102/104中的寄生漏电的消除。如图1中所示,第一补偿路径106在图1中称为中和补偿NC 106,连接在正输入节点Inp和负输出节点Outn之间,并且第二补偿路径108在图1中称为NC 108,连接在负输入节点Inn和正输出节点Outp之间。The
此外,衰减器100还包括控制电路110,用于产生用于控制第一和第二开关式电阻器网络102/104的控制信号。In addition, the
根据一些实施例,衰减器100中的控制电路110还可配置成用于产生用于控制该对补偿路径106/108的控制信号。According to some embodiments, the
控制信号CtrlS、CtrlP以及CtrlNC由控制电路110通过数字数据接口所产生。第一和第二开关式电阻器网络102/202由控制信号CtrlP和CtrlS所控制以便第一和第二开关式电阻器网络102/202的电阻值是可调的。控制信号CtrlNC用于控制补偿路径106/108。The control signals CtrlS, CtrlP and CtrlNC are generated by the
根据一些实施例,衰减器100还可包括:第一对感应器L1a/L1b,连接在差分输入端口Inp/Inn,以及第二对感应器L2a/L2b,连接在差分输出端口Outp/Outn。在这些实施例中,第一和第二开关式电阻器网络102/104相应地通过第一和第二对感应器耦合到差分输入/输出端口。第一和第二对感应器L1a/L1b、L2a/L2b用于补偿衰减器100的带宽。根据一些实施例,第一和第二对感应器是相互耦合的感应器,分别具有耦合系数M1和M2。According to some embodiments, the
根据一个实施例,衰减器100可由图2中所示的电路所实现,其中第一和第二开关式电阻器网络102/104可由Pi类型开关式电阻器网络202/204所实现。According to one embodiment, the
如图2中所示,每个Pi类型开关式电阻器网络202/204包括两个可开关式可变并联电阻器Rp和一个可开关式可变串联电阻器Rs。As shown in FIG. 2, each Pi-type switched
根据一个实施例,衰减器100可由图3中所示的电路所实现,其中第一和第二开关式电阻器网络102/104可由T类型开关式电阻器网络302/304所实现。According to one embodiment, the
如图3中所示,每个T类型开关式电阻器网络302/304包括一个可开关式可变并联电阻器Rp和两个可开关式可变串联电阻器Rs。As shown in FIG. 3, each T-type switched
根据一些实施例,可开关式可变串联电阻器Rs可由图4中所示的电路所实现,其中图4(a)示出可开关式可变串联电阻器Rs的符号,图4(b)示出可开关式可变串联电阻器Rs的示例结构,以及图4(c)更详细地示出可开关式可变串联电阻器Rs的每一分支。According to some embodiments, the switchable variable series resistor Rs may be implemented by the circuit shown in FIG. 4 , where FIG. 4( a ) shows the symbol of the switchable variable series resistor Rs and FIG. 4( b ) An example structure of the switchable variable series resistor Rs is shown, and FIG. 4( c ) shows each branch of the switchable variable series resistor Rs in more detail.
如图4(b)中所示,可开关式可变串联电阻器Rs包括一个或多个开关式电阻器分支400、401、……、40n,该一个或多个开关式电阻器分支400、401、……、40n中的每个包括与开关串联的电阻器Rs0、Rs1、……、Rsn。可开关式可变串联电阻器Rs还包括旁路路径40b。As shown in FIG. 4(b), the switchable variable series resistor Rs includes one or more switched
如图4(c)中所示,对于一个或多个开关,包括与电阻器串联的电容器的引导路径(bootstrap path)连接在开关的以下两者之间:栅极;以及漏极或源极,这取决于一个或多个开关的大小。使用引导路径能有效地提高开关线性。然而,对于更小大小的开关,可能不需要引导路径,例如,在分支400中,没有引导路径连接在开关Ts0的以下两者之间:栅极;以及漏极或源极。As shown in Figure 4(c), for one or more switches, a bootstrap path comprising a capacitor in series with a resistor is connected between: the gate; and the drain or source , depending on the size of one or more switches. Using a guide path can effectively improve switching linearity. However, for smaller sized switches, the guide paths may not be needed, eg, in
如图4(c)中所示,旁路路径40b包括开关Tb,并且包括与电阻器Rb串联的电容器Cb的引导路径连接在开关Tb的以下两者之间:栅极;以及漏极或源极。As shown in Figure 4(c),
当可开关式可变串联电阻器Rs包括多个开关式电阻器分支400、401、……、40n时,由控制电路110所产生的控制信号CtrlS包括多个控制信号Ctrls0、Ctrls1、……、Ctrlsn,用于控制每个分支中的开关,其中n是正整数。控制信号CtrlS还包括Ctrlspass,用于控制旁路路径40b。When the switchable variable series resistor Rs includes a plurality of
根据一些实施例,可开关式可变并联电阻器Rp可由图5中所示的电路所实现,其中图5(a)示出可开关式可变并联电阻器Rp的符号,图5(b)示出可开关式可变并联电阻器Rp的示例结构,以及图5(c)更详细地示出可开关式可变并联电阻器Rp的每一分支。According to some embodiments, the switchable variable shunt resistor Rp may be implemented by the circuit shown in FIG. 5 , where FIG. 5( a ) shows the symbol of the switchable variable shunt resistor Rp and FIG. 5( b ) An example structure of the switchable variable shunt resistor Rp is shown, and Figure 5(c) shows each branch of the switchable variable shunt resistor Rp in more detail.
如图5(b)中所示,可开关式可变并联电阻器Rp包括一个或多个开关式电阻器分支500、501、……、50m,以及可开关式可变并联电阻器Rp还包括与开关式电阻器分支500、501、……、50m串联连接的电阻器(RPb)。该一个或多个开关式电阻器分支500、501、……、50m中的每个包括与开关串联的电阻器Rp0、Rp1、……、Rpm。As shown in Figure 5(b), the switchable variable parallel resistor Rp includes one or more
如图5(c)中所示,对于一个或多个开关,包括与电阻器串联的电容器的引导路径连接在开关的以下二者之间:栅极;以及漏极或源极,这取决于一个或多个开关的大小。例如,对于分支500中较小大小的开关Tp0,没有引导路径连接在开关Tp0的以下两者之间:栅极;以及漏极或源极。As shown in Figure 5(c), for one or more switches, a lead path including a capacitor in series with a resistor is connected between the switches: the gate; and the drain or source, depending on The size of one or more switches. For example, for the smaller sized switch Tp 0 in
当可开关式可变并联电阻器Rp包括多个开关式电阻器分支500、501、……、50m时,由控制电路110所产生的控制信号CtrlP包括多个控制信号Ctrlp0、Ctrlp1、……、Ctrlpm,用于控制每个分支中的开关,其中m是正整数。When the switchable variable parallel resistor Rp includes a plurality of
根据一些实施例,补偿路径106/108可由图6中所示的电路所实现,其中图6(a)示出补偿路径106/108的符号,图6(b)示出补偿路径106/108的示例结构,以及图6(c)示出补偿路径106/108的另一示例结构。如图6(b)和图6(c)中所示,每个补偿路径106/108包括一个或多个开关式电容器分支,以及每个开关式电容器分支包括与电阻器Rnc、Rnc0、Rnc1、……、Rnck串联连接的电容器Cnc、Cnc0、Cnc1、……、Cnck。在旁路模式中,用于消除寄生漏电的补偿路径可被切断以便减少插入损失。According to some embodiments, the
根据一些实施例,在补偿路径106/108中的每个开关式电容器分支还包括与电容器Cnc、Cnc0、Cnc1、……、Cnck和电阻器Rnc、Rnc0、Rnc1、……、Rnck串联连接的开关。According to some embodiments, each switched capacitor branch in the
当补偿路径106/108包括多个开关式电容器分支时,控制信号CtrlNC包括多个控制信号Ctrlnck、……、Ctrlnc1、Ctrlnc0,用于控制每一分支中的开关,其中k是大于或等于0的整数。When the
下文描述根据本文中的实施例的衰减器100的实现细节、性能和优势。如上文所述,开关式电阻器网络102/104用于设置期望衰减。为了示出期望衰减和电阻器值之间的关系,得出示例设计公式用于Pi类型开关式电阻器网络202/204。在图7中示出没有补偿路径的Pi类型开关式电阻器网络202/204的简化等效电路,其中图7(a)示出Pi类型开关式电阻器网络202/204,以差分方式连接,以及图7(b)示出其单端部分。Implementation details, performance, and advantages of the
为了简明,分析图7(b)中以单端方式连接的Pi类型开关式电阻器网络202/204,其中输入和输出端口阻抗RL=50添加到其中。在用于与要求匹配的理想条件中,开关式电阻器网络202/204应该匹配输入和输出端口阻抗RL=50 ohm,即:For simplicity, analyze the Pi-type switched
当在匹配条件中,电压增益vg由以下给出:When in matched conditions, the voltage gain vg is given by:
从匹配要求,给出:From matching requirements, given:
所以Rs可表示为:So Rs can be expressed as:
以(4)中的Rs表达式替代衰减或增益表达式(2)中的Rs,这给出:Substituting the Rs expression in (4) for Rs in the attenuation or gain expression (2), this gives:
其中(对于理想纯电阻器情况)。in (for the ideal pure resistor case).
Rp可写为期望衰减的函数:Rp can be written as a function of expected decay:
其中,以及VG是以dB为单位的所要求或期望的衰减。in , and VG is the required or desired attenuation in dB.
应该注意的是,以上公式是Pi类型开关式电阻器网络的示例设计公式,本领域技术人员将意识到,对于T类型开关式电阻器网络,设计公式将会不同。It should be noted that the above formula is an example design formula for a Pi type switched resistor network, those skilled in the art will realize that the design formula will be different for a T type switched resistor network.
回到图4,其中示出根据本文中的一个实施例的可开关式可变串联电阻器Rs的结构。如上文所述,如在图4(b)和图4(c)的底部的虚线框中所示,可开关式可变串联电阻器Rs包括旁路路径40b。当不需要衰减输入信号时,衰减器100设置成旁路模式以及所有开关式电阻器分支400、401、……、40n通过开启旁路路径40b中的开关Tb而被旁路。控制信号CtrlSpass在旁路模式期间设置成逻辑高。如图4(c)中所示,在旁路路径40b中,包括与电阻器Rb串联的电容器Cb的引导路径连接在开关Tb的以下两者之间:栅极;以及漏极或源极。电容器Cb的目的是用于通过使用在开关Tb的漏极或源极的输入信号来引导开关Tb的栅极电压,以及用于保持栅极和漏极或源极之间的电压接近由控制信号CtrlSpass提供的恒定DC电压。这意味MOS开关晶体管Tb的传导电阻器Ron接近常数,因此提高开关Tb的线性。插入于引导路径中的电阻器Rb用于避免增加信号路径中的电容性负荷,以及还减少由开关晶体管Tb的寄生电容引起的漏电。电阻器Rg是串联在控制节点和开关晶体管Tb的栅极之间的电阻器,并且RgCb的时间常数应该比最低操作频率的周期大得多。以此方式,实现较高频率的输入信号的较低插入损失。在其它衰减模式中,控制信号CtrlSpass设置成逻辑低,开关Tb被关断,然后旁路路径被断开。Returning to FIG. 4, there is shown the structure of the switchable variable series resistor Rs according to one embodiment herein. As described above, the switchable variable series resistor Rs includes the
开关式电阻器分支400、401、……、40n用于包含旁路模式的不同衰减设置。在旁路模式中,所有控制信号Ctrls0、Ctrls1、……、Ctrlsn设置成逻辑高,因此所有在开关式电阻器分支400、401、……、40n中的开关是传导的,这进一步减少插入损失。Switched
当在其它衰减设置中,只有一些开关式电阻器分支400、401、……、40n传导,以及根据Eq.(4)所给出的表达式提供电阻值Rs。由于硅工艺变化,芯片上电阻器的电阻值可在范围±25%中变化。因此实际中,更多控制比特可添加用于调整电阻。When in other attenuation settings, only some of the switched
开关式电阻器分支400、401、……、40n中的电阻器可设计为例如二进制加权(binary weighted)的大小,也就是Rs0=R、Rs1=R/2、……、Rsn=R/2n。对于开关式电阻器分支40n,其可视为单位电阻器单元R的并联的2n个分支。所以是电阻最小的电阻器,以及开关是大小最大的开关。增大的大小可减少开关传导电阻Ron的影响,以便提高线性,但代价是在信号路径中引入较大寄生电容。因此,如图4(c)中所示,在这里用于提高线性的引导路径对于较大大小的开关更有效。然而,对于较小大小的开关,引导路径可能不需要。如从图4(c)所见,对于开关式电阻器分支400,没有用于开关Ts0的引导路径。 The resistors in the switched resistor branches 400 , 401 , . R/2 n . For the switched
如图5中所示,对于可开关式可变并联电阻器Rp,二进制加权的电阻器还可用在开关式电阻器分支500、501、……、50m中。在旁路模式中,所有开关式电阻器分支被断开,所以最小化插入损失。As shown in FIG. 5, for the switchable variable parallel resistor Rp, binary weighted resistors can also be used in the switched
在其它衰减模式中,Rp的值可根据Eq.(6)来被选择。如图5(c)中所示,取决于开关的大小还可选地使用引导路径,例如,引导路径用于开关式电阻器分支50m中的最大开关,而对于开关式电阻器分支500中的最小开关Tp0,引导路径被忽略。In other decay modes, the value of Rp can be selected according to Eq. (6). As shown in Fig. 5(c), a pilot path is also optionally used depending on the size of the switch, eg a pilot path is used for the largest switch in the switched
实际中,由于三个节点(也就是开关Tb的栅极、漏极和源极)之间的寄生电容,寄生漏电存在,并且这些漏电损害在深度衰减分级中的衰减设置。图8示出针对旁路模式和不同衰减分级的衰减水平Vs频率,其中期望衰减水平以实线绘制,而由于寄生电容导致的真实衰减水平以虚线绘制。可见,由于寄生电容导致的寄生漏电破坏期望衰减水平,特别是在较高频率。In practice, parasitic leakages exist due to parasitic capacitances between the three nodes (ie gate, drain and source of switch Tb), and these leakages impair the attenuation settings in deep attenuation stages. Figure 8 shows the attenuation level Vs frequency for bypass mode and different attenuation stages, where the desired attenuation level is plotted in solid lines and the actual attenuation level due to parasitic capacitance is plotted in dashed lines. It can be seen that parasitic leakage due to parasitic capacitance destroys the desired attenuation level, especially at higher frequencies.
如图1-3中所示,衰减器100是采用差分结构,这使得能够添加一对补偿路径NC106/108用于中和或消除漏电。通过交叉耦合该对补偿路径106/108来实现消除,也就是,第一补偿路径106连接在正输入节点Inp和负输出节点Outn之间,以及第二补偿路径108连接在负输入节点Inn和正输出节点Outp之间。以此方式,任何在正输入节点的漏电信号耦合至负输出节点,由此消除任何在负输出节点的漏电信号。以相同方式,任何在负输入节点的漏电信号耦合至正输出节点,由此消除任何在正输出节点的漏电信号。这样促成良好的衰减性能,特别是在高频率和在深度衰减分级中,如图8中的实线中所示,其中补偿之后所有分级的衰减水平的斜率是相同的。As shown in Figures 1-3, the
如上文所述,补偿路径106/108包括一个或多个开关式电容器分支。如图6(b)中所示,当只有一个开关式电容器分支用于减少插入损失时,开关晶体管在旁路模式中被关断,因此补偿路径从开关式电阻器网络被断开。然而,应该注意的是,补偿路径中的开关晶体管是可选的,也就是,补偿路径可只包括电容器和电阻器,以及可一直连接至旁路模式中以及在其它衰减设置的开关式电阻器网络。As described above, the
图6(c)中,使用若干开关式电容器分支,因此这将给予更多的自由用于对不同衰减设置或者水平调节补偿。由于这是可编程的方法,这还可处理由于设计工具中对电容器值和电阻器值的不准确的提取而导致的设计误差以及工艺变化。In Figure 6(c), several switched capacitor branches are used, so this would give more freedom to adjust compensation for different attenuation settings or levels. Since this is a programmable approach, this also handles design errors and process variations due to inaccurate extraction of capacitor and resistor values in the design tool.
从图8可见的是,衰减水平具有沿着频率轴的斜率。这意味着在较高频率的插入损失高于在较低频率的插入损失,这致使衰减器的较窄的带宽。为了提高带宽,一对具有相互耦合的感应器可用在输入端口和输出端口。如图1-3中所示,第一对感应器L1a/L1b连接在差分输入端口Inp/Inn,用于在期望频率与输入寄生电容谐振,以及第二对感应器L2a/L2b连接在差分输出端口Outp/Outn用于在期望频率与输出寄生电容谐振。以此方式,降低衰减水平的斜率,以及扩大衰减器100的带宽。这在图9中图示,其中实曲线是频率响应,也就是,衰减水平Vs频率,具有感应器补偿,并且虚线是未补偿的频率响应。It can be seen from Figure 8 that the attenuation level has a slope along the frequency axis. This means that the insertion loss at higher frequencies is higher than at lower frequencies, which results in a narrower bandwidth of the attenuator. To increase the bandwidth, a pair of inductors with mutual coupling can be used at the input port and the output port. As shown in Figures 1-3, the first pair of inductors L1a/L1b are connected at the differential input ports Inp/Inn for resonating with the input parasitic capacitance at the desired frequency, and the second pair of inductors L2a/L2b are connected at the differential output Ports Outp/Outn are used to resonate with the output parasitic capacitance at the desired frequency. In this way, the slope of the attenuation level is reduced, and the bandwidth of the
在图10中示出这两对相互耦合的感应器的示例布局,其中L1a/L1b和L2b/L2b的布局以交织方式设计,以便通过利用这两部分之间的相互感应以节省硅区域以及增加Q因子。当然其它类型的分离感应器也可被使用,但是代价是大的硅区域和稍多的插入损失。An example layout of these two pairs of mutually coupled inductors is shown in Figure 10, where the layouts of L1a/L1b and L2b/L2b are designed in an interleaved fashion to save silicon area and increase the Q factor. Of course other types of split inductors can be used, but at the expense of a large silicon area and slightly more insertion loss.
总结上文的论述,衰减器100的各种实施例的优势包含:Summarizing the discussion above, advantages of various embodiments of
·准确的衰减水平或者分级:Pi或者T结构的开关式电阻器网络使电阻可调以及还可处理工艺变化,因此提供准确的衰减水平和分级。• Accurate attenuation levels or grading: The switched resistor network in Pi or T configuration enables adjustable resistance and also handles process variations, thus providing accurate attenuation levels and grading.
·更大的衰减范围:补偿路径用于消除寄生漏电以便在深度衰减的衰减水平或者分级更准确,因此衰减器100实现更大的衰减范围。• Larger attenuation range: The compensation path is used to eliminate parasitic leakage for more accurate attenuation levels or grading at deep attenuation, so the
·更高线性和低插入损失:在一些实施例中引导路径用于较大大小的开关晶体管和用于旁路路径以便提高线性以及减少插入损失;· Higher linearity and low insertion loss: in some embodiments lead paths for larger sized switching transistors and for bypass paths to improve linearity and reduce insertion loss;
·宽带宽:在一些实施例中补偿感应器用在输入端口和输出端口,用于分别与输入和输出寄生电容谐振,所以扩大衰减器100的带宽。• Wide bandwidth: In some embodiments compensation inductors are used at the input port and output port to resonate with the input and output parasitic capacitances, respectively, thus expanding the bandwidth of the
根据本文中的实施例的衰减器100可用在各种电子装置中。图11示出电子装置1100的框图,电子装置1100可以是,例如无线电频率收发器、无线电频率前端、无线通信装置(比如用户设备或者移动装置和/或基站、无线电基站中的多天线系统)、或者任何通用电子电路或者设备(比如自动增益控制电路、测量设备等等)。电子装置1100可包括其它单元,其中示出处理单元1110,处理单元1110可与衰减器100中的控制电路110交互用于不同衰减设置或者操作模式。The
本领域技术人员将理解,虽然图4-6中所示的衰减器100的补偿路径104/106、旁路路径40b以及开关式电阻器阵列Rs、Rp中的开关晶体管是场效应晶体管(FET),但是任何其它类型的晶体管例如金属氧化物半导体FET(MOSFET)、结FET(JFET)、双极结晶体管(BJT)等可包括在衰减器100中。当使用词语“包括”时,其应该解释为非限制的,也就是意味着“至少由……组成”。Those skilled in the art will understand that although the
本文中的实施例不限制于上文所述的优选实施例。各种可替代方案、修改和等同方案可被使用。因此,上文实施例不应该视为限制由附上的权利要求所限定的本发明的范围。The embodiments herein are not limited to the preferred embodiments described above. Various alternatives, modifications and equivalents can be used. Accordingly, the above embodiments should not be considered as limiting the scope of the invention, which is defined by the appended claims.
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| CN108023572A (en) * | 2017-11-16 | 2018-05-11 | 北京遥感设备研究所 | A kind of low difference CMOS difference numerical-control attenuators |
| WO2019196119A1 (en) * | 2018-04-13 | 2019-10-17 | 华为技术有限公司 | Signal attenuation network and wireless signal receiver |
| US10284394B1 (en) * | 2018-08-10 | 2019-05-07 | Inphi Corporation | Input termination circuits for high speed receivers |
| US11431531B2 (en) | 2020-03-18 | 2022-08-30 | Qualcomm Incorporated | Termination for high-frequency transmission lines |
| US12113500B2 (en) * | 2020-12-23 | 2024-10-08 | Intel Corporation | Attenuator circuit, receiver, base station, mobile device and method for operating an attenuator circuit |
| US11923819B2 (en) | 2021-06-22 | 2024-03-05 | Mediatek Singapore Pte. Ltd. | Wideband signal attenuator |
| CN113608000B (en) * | 2021-07-19 | 2023-03-28 | 深圳麦科信科技有限公司 | Differential circuit, differential probe and oscilloscope assembly |
| CN114726340B (en) * | 2021-12-14 | 2024-11-08 | 东南大学 | An active attenuator circuit |
| US20240243736A1 (en) * | 2023-01-18 | 2024-07-18 | Mediatek Inc. | Digital step attenuator with a diversion circuit for high-frequency signal |
| CN119945379B (en) * | 2025-01-08 | 2025-11-04 | 中山大学 | MOS attenuator based on transistor parasitic capacitance compensation phase and control method |
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| KR20170087512A (en) | 2017-07-28 |
| US10630264B2 (en) | 2020-04-21 |
| US20180337659A1 (en) | 2018-11-22 |
| CN107005216A (en) | 2017-08-01 |
| EP3228005B1 (en) | 2018-08-15 |
| US10305450B2 (en) | 2019-05-28 |
| MX364580B (en) | 2019-05-02 |
| WO2016086984A1 (en) | 2016-06-09 |
| US20190280672A1 (en) | 2019-09-12 |
| EP3228005A1 (en) | 2017-10-11 |
| KR101953496B1 (en) | 2019-02-28 |
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