CN106967961A - A method for removing deposited film on inner wall of CVD reaction chamber - Google Patents

Abstract

The invention discloses a method for removing a deposited film on the inner wall of a CVD reaction cavity, which comprises the following steps: the deposited film on the inner wall of the CVD reaction cavity is subjected to impact infiltration by high-temperature high-pressure steam, and the steam temperature causes thermal mismatch stress of the deposited film and the cavity, so that the deposited film falls off. The method is convenient and efficient, and can effectively avoid scratching the cavity during cleaning.

Description

A method for removing deposited film on inner wall of CVD reaction chamber

technical field

The invention relates to the technical field of deposited film cleaning, in particular to a method for removing deposited films on the inner wall of a CVD reaction chamber.

Background technique

CVD (Chemical vapor deposition, chemical vapor deposition) is a process technology in which reactant substances are ionized or decomposed under gaseous conditions, react on or near the surface of the substrate, and deposit solid substances on it, thereby producing solid materials. Microwave plasma CVD is a process that utilizes microwave-excited plasma to realize chemical vapor deposition, which has the advantages of large output, high quality and low cost. The principle is that microwaves are used to resonate in the reactor to form a central area of strong electromagnetic field, ionize the gas in the reactor to form plasma, and then form solid material deposition on the surface of the substrate.

When using microwave plasma CVD to deposit various semiconductor films and insulating films, a layer of deposited film will be formed on the inner surface of the chemical vapor deposition chamber or the surface of the reactor in the chamber, which is not grown during the growth process. desired by-products. For example, a layer of diamond-like carbon film (DLC, Diamond Like Carbon) will be formed on the inner surface of the microwave plasma CVD cavity for diamond growth, which not only affects the microwave reflection effect of the cavity, but also because the film grows in diamond The shedding during the process causes electric sparks in the plasma, which may cause impurities on the surface of the diamond sample, and may also cause unwanted doping of the diamond film; in MOCVD (Metal Organic Chemical Vapor Deposition, metal organic compound chemical vapor deposition) equipment In the process, above the growth sample, the inner surface of the chamber or reactor will form III-V film or other deposits. Surface state and film growth; also in other CVD.

In the process of studying the above problems, the inventor found that the methods for cleaning the film in the prior art are roughly divided into two types, one is to use mechanical methods to clean the cavity, and the other is to use chemical corrosion to clean the cavity , although the latter can obtain a certain cleaning effect, it is difficult to achieve the cleaning effect for metal chambers and reactors or non-movable chambers and reactors. However, cleaning with mechanical methods will scratch the chamber and reactor. device, it is also difficult to achieve the cleaning effect.

Contents of the invention

The technical problem to be solved by the present invention is to provide a method for removing the deposited film on the inner wall of the CVD reaction chamber which is convenient and efficient and can effectively avoid scratching the inner wall of the CVD reaction chamber during cleaning.

In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is a method for removing the deposited film on the inner wall of the CVD reaction chamber, using high-temperature and high-pressure steam to impinge and infiltrate the deposited film on the inner wall of the CVD reaction chamber, and the temperature of the steam causes the deposited film and the chamber to The body produces thermal mismatch stress, which leads to the peeling off of the deposited film.

Further, the cover is covered on the CVD reaction chamber, the nozzle is extended into the CVD reaction chamber through the cover, the nozzle is connected with a high-pressure steam generator, and high-pressure steam or hot water is sprayed to the inner wall of the CVD reaction chamber through the nozzle , so that the deposited film falls off.

Further, the position of the nozzle is adjusted up, down, left, and right, and the direction of high-pressure steam or hot water spraying is adjusted. During the cleaning process, the deposited film falls off and the waste liquid condensed with the steam is discharged through the drainage pipe connected to the cover body.

Further, the spray head is connected to the high-pressure steam generator through a pipe, and the outlet end of the pipe is detachably connected to the spray head through a bend-adjustable metal joint.

The invention discloses a device used in the method for removing the deposited film on the inner wall of the CVD reaction chamber, a device for removing the deposited film on the inner wall of the CVD reaction chamber, the device includes a nozzle, and the nozzle is used to extend into the CVD reaction chamber , and spray high-pressure steam or hot water toward its inner wall; it also includes a high-temperature and high-pressure steam generator. The direction of the nozzle can be adjusted; the pipeline is provided with an adjustable flow controller; it also includes a cover, which is used to cover the opening of the CVD reaction chamber, and has an opening on the cover, which is used for the nozzle to penetrate.

Further, a drainage pipe is arranged on the cover.

Further, the high-temperature and high-pressure steam generator is provided with a water inlet, and a filter valve is installed at the water inlet.

A method for removing deposited film on the inner wall of a CVD reaction chamber of the present invention has the following advantages:

1. Use high-temperature and high-pressure steam to impinge and infiltrate the deposited film. The steam temperature will cause thermal mismatch stress between the deposited film and the cavity, resulting in the detachment of the deposited film, without scratching the inner wall of the CVD reaction chamber.

2. During the cleaning process, the deposited film falls off and the waste liquid condensed with steam is discharged through the drainage pipe to ensure continuous work.

3. The nozzle can be rotated, which is convenient for cleaning the cavity and will not cause dead ends.

4. During the cleaning process, the water pressure can be adjusted, and the water pressure can be adjusted according to the specific conditions of the deposited film in the chamber.

Description of drawings

FIG. 1 is a schematic diagram of a device for removing deposited films on the inner wall of a CVD reaction chamber in the present invention.

Among them: 1. High temperature and high pressure steam generator; 2. Regulating flow controller; 3. Pipeline; 4. Rubber sleeve; 5. Cover body; 6. CVD reaction chamber; 7. Nozzle; 8. Drainage pipe; 9. water hole; 10 filter screens.

detailed description

A method for removing a deposited film on the inner wall of a CVD reaction chamber, using high-temperature and high-pressure steam to impinge and infiltrate the deposited film on the inner wall of the CVD reaction chamber, and the temperature of the steam causes thermal mismatch stress between the deposited film and the chamber, resulting in the detachment of the deposited film. The cover body 5 is covered on the CVD reaction chamber 6, the nozzle 7 extends into the CVD reaction chamber 6 through the cover body 5, the nozzle 7 is connected with the high-pressure steam generator 1, and the nozzle 7 is sprayed to the inner wall of the CVD reaction chamber 6 Spray high-pressure steam or hot water to make the deposited film fall off. Adjust the position of the nozzle 7 up and down, left and right, and adjust the direction of high-pressure steam or hot water spraying. During the cleaning process, the deposited film falls off and the waste liquid condensed with the steam is discharged through the drain pipe 8 connected to the cover body 5 . The spray head 7 is connected to the high-pressure steam generator 1 through the pipe 3, and the outlet end of the pipe 3 and the spray head 7 are detachably connected through a bend-adjustable metal joint.

The invention discloses a device used in the method for removing the deposited film on the inner wall of the CVD reaction chamber, a device for removing the deposited film on the inner wall of the CVD reaction chamber. It extends into the CVD reaction chamber 6 and sprays high-pressure steam or hot water toward its inner wall; it also includes a high-temperature and high-pressure steam generator 1, which is connected to the nozzle 7 through a pipeline 3, and the outlet end of the pipeline 3 It is detachably connected with the nozzle 7 through a bend-adjustable metal joint, so that the direction of the nozzle 7 can be adjusted; the pipeline 3 is provided with an adjustable flow controller 2; it also includes a cover 5, which is used to cover the CVD reaction chamber 6 The opening of the cover body 5 is provided with an opening, and the opening is used for the nozzle 7 to penetrate. A drain pipe 8 is arranged on the cover body 5 . A water inlet 9 is opened on the high temperature and high pressure steam generator 1, and a filter valve 10 is also installed at the water inlet 9.

The principle that it can be cleaned is that the expansion coefficient of the deposited film to be eliminated is different from that of the reaction chamber, and when high-temperature and high-pressure steam is used for impact, the deposited film will break away from the inner wall of the reaction chamber. The method for removing the deposited film on the inner wall of the CVD reaction chamber can conveniently and efficiently clean the metal cavity or the movable cavity, and can effectively avoid scratching the inner wall of the cavity during cleaning. Common water is used as the water source, and impurities in the water are filtered through the filter valve 10 arranged at the water inlet 9, thereby ensuring the cleanliness of the water source.

Claims (7)

1. a kind of method of removal CVD reaction cavity inwall deposition films, it is characterised in that impact infiltration using high temperature and high pressure steam The CVD reaction cavity inwall deposition films, and vapor (steam) temperature causes deposition film and cavity to produce thermal mismatch stress, causes deposition film Come off.

2. the method for a kind of removal CVD reaction cavity inwall deposition films according to claim 1, it is characterised in that will cover Body (5) is covered on CVD reaction cavities (6), and shower nozzle (7) is stretched into CVD reaction cavities (6) through the cover body (5), the spray Head (7) be connected with high pressure steam generator (1), by shower nozzle (7) to CVD reaction cavities (6) inwall spray high steam or Hot water, makes deposition film come off.

3. the method for a kind of removal CVD reaction cavity inwall deposition films according to claim 2, it is characterised in that up and down Deposition film comes off with steaming in the orientation of the position of left and right adjustment shower nozzle (7), adjustment high steam or hot water spray, cleaning process Drainage pipeline (11) discharge of the waste liquid that vapour congeals into through being connected on cover body (5).

4. the method for a kind of removal CVD reaction cavity inwall deposition films according to claim 3, it is characterised in that described Shower nozzle (7) is connected by pipeline (3) with high pressure steam generator (1), and is led between the port of export and shower nozzle (7) of pipeline (3) The adjustable metal joint of camber is crossed to be detachably connected.

5. a kind of device of removal CVD reaction cavity inwall deposition films, it is characterised in that the device includes shower nozzle (7), the spray Head (7) is used to stretch into CVD reaction cavities (6), and sprays high steam or hot water towards its inwall；Also include HTHP Steam generator (1), the high temperature and high pressure steam generator (1) is connected with shower nozzle (7) by pipeline (3), and pipeline (3) go out Mouth end can adjust metal joint by camber with shower nozzle (7) and be detachably connected, so that shower nozzle (7) direction is adjustable；The pipeline (3) regulation flow controller (2) is provided with；Also include cover body (5), the cover body (5) is used to be covered in CVD reaction cavities (6) perforate is offered on opening, the cover body (5), the perforate is penetrated for shower nozzle (7).

6. a kind of device of removal CVD reaction cavity inwall deposition films as claimed in claim 5, it is characterised in that the cover A drainage pipeline (8) is provided with body (5).

7. the device of a kind of removal CVD reaction cavities inwall deposition film as described in claim 5 or 6, it is characterised in that described Inlet opening (9) is offered on high temperature and high pressure steam generator (1), inlet opening (9) place is also equipped with strainer valve (10).