CN106932976A - Display device, array base palte and pixel cell - Google Patents
Display device, array base palte and pixel cell Download PDFInfo
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Abstract
本公开提供一种显示装置、阵列基板及像素单元。所述像素单元包括多个亚像素,各亚像素均包括第一子亚像素以及第二子亚像素;第一子亚像素包括第一像素电极和第一薄膜晶体管,第一像素电极具有多个第一宽度的狭缝以及被各狭缝分隔的多个第一子电极;第一薄膜晶体管的控制端连接至第一栅线、第一端连接至第一数据线、第二端连接至第一像素电极;第二子亚像素包括第二像素电极和第二薄膜晶体管,第二像素电极具有多个第二宽度的狭缝以及被各狭缝分隔的多个第二子电极,且第二宽度与第一宽度不相等;第二薄膜晶体管的控制端连接至第二栅线、第一端连接至第二数据线、第二端连接至第二像素电极。
The disclosure provides a display device, an array substrate and a pixel unit. The pixel unit includes a plurality of sub-pixels, and each sub-pixel includes a first sub-sub-pixel and a second sub-sub-pixel; the first sub-sub-pixel includes a first pixel electrode and a first thin film transistor, and the first pixel electrode has a plurality of A slit of the first width and a plurality of first sub-electrodes separated by each slit; the control terminal of the first thin film transistor is connected to the first gate line, the first terminal is connected to the first data line, and the second terminal is connected to the second terminal. A pixel electrode; the second sub-sub-pixel includes a second pixel electrode and a second thin film transistor, the second pixel electrode has a plurality of slits with a second width and a plurality of second sub-electrodes separated by each slit, and the second The width is not equal to the first width; the control terminal of the second thin film transistor is connected to the second gate line, the first terminal is connected to the second data line, and the second terminal is connected to the second pixel electrode.
Description
技术领域technical field
本公开涉及显示技术领域,具体而言,涉及一种显示装置、阵列基板及像素单元。The present disclosure relates to the field of display technology, and in particular, to a display device, an array substrate and a pixel unit.
背景技术Background technique
目前,在薄膜晶体管液晶显示器领域中,IPS(平面场效应)显示器和FFS(边缘场效应)两种类型的显示器因其具有宽视角、高透过率、快速响应等优点获得而广泛的应用。对于现有的IPS显示器和FFS显示器而言,二者的阵列基板均包括多个阵列分布的像素单元,各个像素单元均包括多个亚像素;这些亚像素的像素电极一般采用上、下双畴对称的狭缝电极。其中,狭缝电极的电极间距对于显示效果有着较为明显的影响。具而言之,电极间距较小,则液晶分子的透过率和驱动电压较高,因此亮度和功耗较高;电极间距较大,则液晶分子透过率和驱动电压较低,因此亮度和功耗较低。Currently, in the field of thin film transistor liquid crystal displays, IPS (In-Plane Field Effect) displays and FFS (Fringe Field Effect) displays are widely used because of their advantages of wide viewing angle, high transmittance, and fast response. For the existing IPS display and FFS display, the array substrates of both include a plurality of pixel units distributed in an array, and each pixel unit includes a plurality of sub-pixels; the pixel electrodes of these sub-pixels generally adopt upper and lower dual-domain Symmetrical slit electrodes. Among them, the electrode spacing of the slit electrodes has a relatively obvious influence on the display effect. In other words, the smaller the electrode spacing, the higher the transmittance and driving voltage of liquid crystal molecules, so the brightness and power consumption are higher; the larger the electrode spacing, the lower the transmittance and driving voltage of liquid crystal molecules, so the brightness is higher. and lower power consumption.
现有技术中,现有像素单元的结构和工作模式单一,要想获得高透过率和高亮度,以提高显示效果,则会使驱动电压升高,功耗也随之升高;若要降低功耗,则会使透过率和亮度也随之降低,只能显示低灰阶和低亮度的画面的显示效果;因而无法实现多种亮度和不同功耗需求,适用范围较小,不利于用户根据实际情况进行调节。In the prior art, the structure and working mode of the existing pixel unit are single, in order to obtain high transmittance and high brightness to improve the display effect, the driving voltage will be increased, and the power consumption will be increased accordingly; Reducing power consumption will reduce the transmittance and brightness, and can only display the display effect of low gray scale and low brightness images; therefore, it is impossible to achieve multiple brightness and different power consumption requirements, and the scope of application is small. It is beneficial for the user to adjust according to the actual situation.
需要说明的是,在上述背景技术部分公开的信息仅用于加强对本公开的背景的理解,因此可以包括不构成对本领域普通技术人员已知的现有技术的信息。It should be noted that the information disclosed in the above background section is only for enhancing the understanding of the background of the present disclosure, and therefore may include information that does not constitute the prior art known to those of ordinary skill in the art.
发明内容Contents of the invention
本公开的目的在于提供一种显示装置、阵列基板及像素单元,进而至少在一定程度上克服由于相关技术的限制和缺陷而导致的一个或者多个问题。The purpose of the present disclosure is to provide a display device, an array substrate, and a pixel unit, so as to overcome one or more problems caused by limitations and defects of related technologies at least to a certain extent.
根据本公开的一个方面,提供一种像素单元,包括多个亚像素,各所述亚像素均包括第一子亚像素以及第二子亚像素;其中:According to one aspect of the present disclosure, a pixel unit is provided, including a plurality of sub-pixels, each of which includes a first sub-sub-pixel and a second sub-sub-pixel; wherein:
所述第一子亚像素包括:The first sub-sub-pixel includes:
第一像素电极,所述第一像素电极具有多个第一宽度的狭缝以及被各所述狭缝分隔的多个第一子电极;a first pixel electrode having a plurality of slits of a first width and a plurality of first sub-electrodes separated by each of the slits;
第一薄膜晶体管,所述第一薄膜晶体管的控制端连接至第一栅线、第一端连接至第一数据线、第二端连接至所述第一像素电极;a first thin film transistor, the control terminal of the first thin film transistor is connected to the first gate line, the first terminal is connected to the first data line, and the second terminal is connected to the first pixel electrode;
所述第二子亚像素包括:The second sub-sub-pixel includes:
第二像素电极,所述第二像素电极具有多个第二宽度的狭缝以及被各所述狭缝分隔的多个第二子电极,且所述第二宽度与所述第一宽度不相等;A second pixel electrode, the second pixel electrode has a plurality of slits with a second width and a plurality of second sub-electrodes separated by each of the slits, and the second width is not equal to the first width ;
第二薄膜晶体管,所述第二薄膜晶体管的控制端连接至第二栅线、第一端连接至第二数据线、第二端连接至所述第二像素电极。A second thin film transistor, the control terminal of the second thin film transistor is connected to the second gate line, the first terminal is connected to the second data line, and the second terminal is connected to the second pixel electrode.
在本公开的一种示例性实施例中,所述第一薄膜晶体管的控制端和所述第二薄膜晶体管的控制端连接至同一栅线,所述第一栅线和所述第二栅线为同一栅线;In an exemplary embodiment of the present disclosure, the control terminal of the first thin film transistor and the control terminal of the second thin film transistor are connected to the same gate line, and the first gate line and the second gate line for the same grid line;
所述第一薄膜晶体管的第一端和所述第二薄膜晶体管的第一端连接至不同的数据线,所述第一数据线和所述第二数据线为不同的数据线。The first end of the first thin film transistor and the first end of the second thin film transistor are connected to different data lines, and the first data line and the second data line are different data lines.
在本公开的一种示例性实施例中,所述第一薄膜晶体管的控制端和所述第二薄膜晶体管的控制端连接至不同的栅线,所述第一栅线和所述第二栅线为不同的栅线;In an exemplary embodiment of the present disclosure, the control terminal of the first thin film transistor and the control terminal of the second thin film transistor are connected to different gate lines, and the first gate line and the second gate The lines are different raster lines;
所述第一薄膜晶体管的第一端和所述第二薄膜晶体管的第一端连接至同一数据线,所述第一数据线和所述第二数据线为同一数据线。The first end of the first thin film transistor and the first end of the second thin film transistor are connected to the same data line, and the first data line and the second data line are the same data line.
在本公开的一种示例性实施例中,所述第一像素电极包括第一区域和第二区域,所述第一区域和第二区域内均分布有多个第一子电极,且所述第二区域内的第一子电极与所述第一区域内的第一子电极呈第一夹角排布且不相交,所述第一夹角小于180°;In an exemplary embodiment of the present disclosure, the first pixel electrode includes a first region and a second region, a plurality of first sub-electrodes are distributed in the first region and the second region, and the The first sub-electrodes in the second region and the first sub-electrodes in the first region are arranged at a first angle and do not intersect, and the first angle is less than 180°;
所述第二像素电极包括第三区域和第四区域,所述第三区域和第四区域内均分布有多个第二子电极,且所述第四区域内的第二子电极与所述第三区域内的第二子电极呈第二夹角排布且不相交,所述第二夹角小于180°。The second pixel electrode includes a third area and a fourth area, a plurality of second sub-electrodes are distributed in the third area and the fourth area, and the second sub-electrodes in the fourth area are connected to the The second sub-electrodes in the third region are arranged at a second angle and do not intersect each other, and the second angle is less than 180°.
在本公开的一种示例性实施例中,所述第一宽度与一个所述第一子电极的宽度之和为7.35μm;所述第二宽度与一个所述第二子电极的宽度之和为8.8μm。In an exemplary embodiment of the present disclosure, the sum of the first width and the width of one of the first sub-electrodes is 7.35 μm; the sum of the second width and the width of one of the second sub-electrodes is 8.8 μm.
根据本公开的一个方面,提供一种阵列基板,包括:According to one aspect of the present disclosure, there is provided an array substrate, comprising:
多个呈阵列分布的上述任意一项所述的像素单元;A plurality of pixel units described in any one of the above arrays;
多个栅线,在同一所述像素单元中,各所述第一薄膜晶体管的控制端和各所述第二薄膜晶体管的控制端均连接至同一所述栅线;A plurality of gate lines, in the same pixel unit, the control terminals of each of the first thin film transistors and the control terminals of each of the second thin film transistors are connected to the same gate line;
多个数据线,与所述多个栅线交错设置,在同一所述像素单元中,各所述第一薄膜晶体管的第一端和各所述第二薄膜晶体管的第一端连接至不同的所述数据线。A plurality of data lines, arranged alternately with the plurality of gate lines, in the same pixel unit, the first end of each of the first thin film transistors and the first end of each of the second thin film transistors are connected to different the data line.
在本公开的一种示例性实施例中,在同一行所述像素单元的同一行所述亚像素中,各所述第一子亚像素与各所述第二子亚像素分两行设置,其中,In an exemplary embodiment of the present disclosure, in the same row of the sub-pixels of the same row of the pixel units, each of the first sub-sub-pixels and each of the second sub-sub-pixels are arranged in two rows, in,
各所述第一子亚像素均位于同一行,各所述第二子亚像素均位于另一行;或者Each of the first sub-subpixels is located in the same row, and each of the second sub-subpixels is located in another row; or
各所述第一子亚像素与各所述第二子亚像素互相间隔设置。Each of the first sub-sub-pixels and each of the second sub-sub-pixels are spaced apart from each other.
根据本公开的一个方面,提供一种阵列基板,包括:According to one aspect of the present disclosure, there is provided an array substrate, comprising:
多个呈阵列分布的上述任意一项所述的像素单元;A plurality of pixel units described in any one of the above arrays;
多个栅线,在同一所述像素单元中,各所述第一薄膜晶体管的控制端和各所述第二薄膜晶体管的控制端连接至不同的所述栅线;A plurality of gate lines, in the same pixel unit, the control terminal of each of the first thin film transistors and the control terminal of each of the second thin film transistors are connected to different gate lines;
多个数据线,与所述多个栅线交错设置,在同一所述像素单元中,各所述第一薄膜晶体管的第一端与各所述第二薄膜晶体管的第一端连接至同一所述数据线。A plurality of data lines are arranged alternately with the plurality of gate lines, and in the same pixel unit, the first end of each of the first thin film transistors and the first end of each of the second thin film transistors are connected to the same the data line.
在本公开的一种示例性实施例中,在同一行所述像素单元的同一行所述亚像素中,各所述第一子亚像素与各所述第二子亚像素分两行设置,其中,In an exemplary embodiment of the present disclosure, in the same row of the sub-pixels of the same row of the pixel units, each of the first sub-sub-pixels and each of the second sub-sub-pixels are arranged in two rows, in,
各所述第一子亚像素均位于同一行,各所述第二子亚像素均位于另一行;或者Each of the first sub-subpixels is located in the same row, and each of the second sub-subpixels is located in another row; or
各所述第一子亚像素与各所述第二子亚像素互相间隔设置。Each of the first sub-sub-pixels and each of the second sub-sub-pixels are spaced apart from each other.
根据本公开的一个方面,提供一种显示装置,包括上述任意一项所述的阵列基板。According to one aspect of the present disclosure, a display device is provided, including the array substrate described in any one of the above.
本公开的显示装置、阵列基板和像素单元,在同一像素单元的同一亚像素中,第一子亚像素的第一像素电极具有第一宽度的狭缝,而第二子亚像素的第二像素电极具有第二宽度的狭缝;使得同一亚像素可具有两种电极间距;同时,第一子亚像素可由第一薄膜晶体管控制,第二子亚像素可由第二薄膜晶体管控制;从而可通过控制第一像素电极或第二像素电极之一单独工作或者二者同时工作,调节液晶分子的透过率和驱动电压,以实现对亮度和功耗的调节。由此,便于根据实际情况更好的满足用户需求。In the display device, array substrate and pixel unit of the present disclosure, in the same sub-pixel of the same pixel unit, the first pixel electrode of the first sub-sub-pixel has a slit of the first width, and the second pixel of the second sub-sub-pixel The electrode has a slit with a second width; so that the same sub-pixel can have two electrode spacings; at the same time, the first sub-sub-pixel can be controlled by the first thin film transistor, and the second sub-sub-pixel can be controlled by the second thin film transistor; One of the first pixel electrode or the second pixel electrode works alone or both work simultaneously to adjust the transmittance of liquid crystal molecules and the driving voltage, so as to realize the adjustment of brightness and power consumption. In this way, it is convenient to better meet the needs of users according to the actual situation.
应当理解的是,以上的一般描述和后文的细节描述仅是示例性和解释性的,并不能限制本公开。It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure.
附图说明Description of drawings
此处的附图被并入说明书中并构成本说明书的一部分,示出了符合本公开的实施例,并与说明书一起用于解释本公开的原理。显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description serve to explain the principles of the disclosure. Apparently, the drawings in the following description are only some embodiments of the present disclosure, and those skilled in the art can obtain other drawings according to these drawings without creative efforts.
图1为本公开像素单元一实施方式的示意图。FIG. 1 is a schematic diagram of an embodiment of a pixel unit of the present disclosure.
图2为图1中第一子亚像素的示意图。FIG. 2 is a schematic diagram of the first sub-sub-pixel in FIG. 1 .
图3为图1中第二子亚像素的示意图。FIG. 3 is a schematic diagram of a second sub-sub-pixel in FIG. 1 .
图4为本公开像素单元另一实施方式的示意图。FIG. 4 is a schematic diagram of another embodiment of a pixel unit of the present disclosure.
图5为本公开阵列基板的第一种实施方式的示意图。FIG. 5 is a schematic diagram of a first embodiment of an array substrate of the present disclosure.
图6为本公开阵列基板的第二种实施方式的示意图。FIG. 6 is a schematic diagram of a second embodiment of an array substrate of the present disclosure.
图7为本公开阵列基板的第三种实施方式的示意图。FIG. 7 is a schematic diagram of a third embodiment of an array substrate of the present disclosure.
图8为本公开阵列基板的第四种实施方式的示意图。FIG. 8 is a schematic diagram of a fourth embodiment of an array substrate of the present disclosure.
具体实施方式detailed description
现在将参考附图更全面地描述示例实施方式。然而,示例实施方式能够以多种形式实施,且不应被理解为限于在此阐述的范例;相反,提供这些实施方式使得本公开将更加全面和完整,并将示例实施方式的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中,提供许多具体细节从而给出对本公开的实施方式的充分理解。然而,本领域技术人员将意识到,可以实践本公开的技术方案而省略所述特定细节中的一个或更多,或者可以采用其它的组元、装置等。在其它情况下,不详细示出或描述公知技术方案以避免喧宾夺主而使得本公开的各方面变得模糊。Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solution of the present disclosure may be practiced without one or more of the specific details, or other components, devices, etc. may be used. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the present disclosure.
用语“一个”、“一”、“该”和“所述”用以表示存在一个或多个要素/组成部分/等;用语“包括”和“具有”用以表示开放式的包括在内的意思并且是指除了列出的要素/组成部分/等之外还可存在另外的要素/组成部分/等;用语“第一”和“第二”等仅作为标记使用,不是对其对象的数量限制;“多个”表示两个或两个以上。The terms "a", "an", "the" and "said" are used to indicate the presence of one or more elements/components/etc; means and means that there may be additional elements/components/etc. in addition to the listed elements/components/etc; the terms "first" and "second" etc. Limit; "plurality" means two or more.
像素单元pixel unit
本公开示例实施方式提供一种像素单元,可用于薄膜晶体管阵列基板,如图1~图3,本实施方式的像素单元可以包括多个亚像素1,图1中虚线框内即为一个亚像素1;各个亚像素1可用于显示不同的颜色,例如,一个像素单元中包括三个亚像素1时,三个亚像素1可分别用来显示红、蓝和绿三种颜色;在此不对同一像素单元中的亚像素1的数量作特殊限定,其可以是三个、四个或更多;各个亚像素1均可以包括第一子亚像素11和第二子亚像素12。An exemplary embodiment of the present disclosure provides a pixel unit, which can be used in a thin film transistor array substrate, as shown in FIGS. 1 to 3 , the pixel unit in this embodiment may include a plurality of sub-pixels 1 , and a sub-pixel is represented in a dotted line box in FIG. 1 1; each sub-pixel 1 can be used to display different colors, for example, when a pixel unit includes three sub-pixels 1, the three sub-pixels 1 can be used to display three colors of red, blue and green respectively; The number of sub-pixels 1 in a pixel unit is specifically limited, which may be three, four or more; each sub-pixel 1 may include a first sub-sub-pixel 11 and a second sub-sub-pixel 12 .
在本实施方式中,如图2,第一子亚像素11可以包括第一像素电极111和第一薄膜晶体管112,其中:In this embodiment, as shown in FIG. 2 , the first sub-subpixel 11 may include a first pixel electrode 111 and a first thin film transistor 112, wherein:
第一像素电极111可具有多个宽度为第一宽度d1的狭缝1111以及被各狭缝1111分隔的多个第一子电极1112;狭缝1111和第一子电极1112的数量在此不作特殊限定。进一步的,第一像素电极111上可划分出第一区域和第二区域,所述第一区域和第二区域内均分布有多个第一子电极1112;第一区域内的第一子电极1112可相互平行,第二区域内的第一子电极1112可相互平行,且第一区域内的第一子电极1112与第二区域内的第一子电极1112可以呈第一夹角排布且不相交,从而形成双畴狭缝电极;该第一夹角的角度可以小于180°,例如60°、90°或120°等。The first pixel electrode 111 may have a plurality of slits 1111 with a width of the first width d1 and a plurality of first sub-electrodes 1112 separated by each slit 1111; the numbers of the slits 1111 and the first sub-electrodes 1112 are not limited here. Special limited. Further, the first pixel electrode 111 can be divided into a first area and a second area, and a plurality of first sub-electrodes 1112 are distributed in the first area and the second area; the first sub-electrodes in the first area 1112 may be parallel to each other, the first sub-electrodes 1112 in the second region may be parallel to each other, and the first sub-electrodes 1112 in the first region and the first sub-electrodes 1112 in the second region may be arranged at a first angle and do not intersect to form a double-domain slit electrode; the angle of the first included angle may be less than 180°, such as 60°, 90° or 120°.
第一宽度d1与任意一个第一子电极1112的宽度d2之和为第一像素电极111的电极间距D1,即d1+d2=D1;该电极间距D1可为7.35μm,即D1=7.35μm;其中,第一宽度d1可为4.45μm,第一子电极1112宽度d2可为2.9μm;但上述D1、d1和d2的取值仅为示例性说明,不应理解为对取值的限定,在本公开的其它实施方式中,D1、d1和d2的取值还可以是其它数值,只要满足d1+d2=D1即可,在此不再一一列举。The sum of the first width d 1 and the width d 2 of any one of the first sub-electrodes 1112 is the electrode spacing D 1 of the first pixel electrode 111, that is, d 1 +d 2 =D 1 ; the electrode spacing D 1 can be 7.35 μm , that is, D 1 =7.35 μm; wherein, the first width d 1 can be 4.45 μm, and the width d 2 of the first sub-electrode 1112 can be 2.9 μm; but the above-mentioned values of D 1 , d 1 and d 2 are only exemplary Note that it should not be understood as a limitation on the values. In other embodiments of the present disclosure, the values of D 1 , d 1 and d 2 can also be other values, as long as d 1 +d 2 =D 1 is satisfied , will not be listed here.
第一薄膜晶体管112可具有控制端、第一端和第二端,其控制端可为栅极,可用于连接至第一栅线;其第一端可为源极,可用于连接至第一数据线;其第二端可为漏极,可用于连接至第一像素电极111。The first thin film transistor 112 can have a control terminal, a first terminal and a second terminal, the control terminal can be a gate, can be used to connect to the first gate line; its first terminal can be a source, can be used to connect to the first The data line; its second end can be a drain, which can be used to connect to the first pixel electrode 111 .
在本实施方式中,如图3,第二子亚像素12可以包括第二像素电极121和第二薄膜晶体管122,其中:In this embodiment, as shown in FIG. 3 , the second sub-subpixel 12 may include a second pixel electrode 121 and a second thin film transistor 122, wherein:
第二像素电极121可具有多个宽度为第二宽度d1'的狭缝1211以及被各所述狭缝1211分隔的多个第二子电极1212,且第二宽度d1'可与第一宽度d1不相等;第二子电极1212的数量在此不作特殊限定。进一步的,第二像素电极121上可划分出第三区域和第四区域,所述第三区域和第四区域内均分布有多个第二子电极1212;第三区域内的第二子电极1212可相互平行,第四区域内的第二子电极1212可相互平行,且第三区域内的第二子电极1212与第四区域内的第二子电极1212可以呈第二夹角排布且不相交,从而形成双畴狭缝电极;该第二夹角的角度可以小于180°,例如60°、90°或120°等。该第二夹角可与上述的第一夹角相同或不同。The second pixel electrode 121 may have a plurality of slits 1211 having a width of a second width d 1 ' and a plurality of second sub-electrodes 1212 separated by each of the slits 1211, and the second width d 1 ' may be the same as the first The widths d1 are not equal; the number of the second sub-electrodes 1212 is not specifically limited here. Further, the second pixel electrode 121 can be divided into a third area and a fourth area, and a plurality of second sub-electrodes 1212 are distributed in the third area and the fourth area; the second sub-electrodes in the third area 1212 may be parallel to each other, the second sub-electrodes 1212 in the fourth region may be parallel to each other, and the second sub-electrodes 1212 in the third region and the second sub-electrodes 1212 in the fourth region may be arranged at a second angle and do not intersect to form a double-domain slit electrode; the angle of the second included angle may be less than 180°, such as 60°, 90° or 120°. The second included angle may be the same as or different from the above-mentioned first included angle.
第二宽度d1'与任意一个第二子电极1212的宽度d2'之和为第二像素电极121的电极间距D2,即d1'+d2'=D2;该电极间距D2可为8.8μm,即D2=8.8μm;其中,第二宽度d1'可为5.9μm,第二子电极1212的宽度d2'可为2.9μm;但上述D2、d1'和d2'的取值仅为示例性说明,不应理解为对取值的限定;在本公开的其它实施方式中,D2、d1'和d2'的取值还可以是其它数值,只要满足d1'+d2'=D2,且D2不等于D1即可,在此不再一一列举。The sum of the second width d 1 ′ and the width d 2 ′ of any second sub-electrode 1212 is the electrode spacing D 2 of the second pixel electrode 121, that is, d 1 ′+d 2 ′=D 2 ; the electrode spacing D 2 can be 8.8 μm, that is, D 2 =8.8 μm; wherein, the second width d 1 ′ can be 5.9 μm, and the width d 2 ′ of the second sub-electrode 1212 can be 2.9 μm; but the above-mentioned D 2 , d 1 ′ and d The value of 2 ' is only for illustration and should not be understood as a limitation on the value; in other embodiments of the present disclosure, the values of D 2 , d 1 ' and d 2 ' can also be other values, as long as It only needs to satisfy d 1 ′+d 2 ′=D 2 , and D 2 is not equal to D 1 , and will not be listed here.
第二薄膜晶体管122可具有控制端、第一端和第二端,其控制端可为栅极,可用于连接至第二栅线;其第一端可为源极,可用于连接至第二数据线;其第二端可为漏极,可用于连接至第二像素电极121。The second thin film transistor 122 can have a control terminal, a first terminal and a second terminal, and its control terminal can be a gate, which can be used to connect to the second gate line; its first terminal can be a source, which can be used to connect to the second gate line. The data line; its second end can be a drain, which can be used to connect to the second pixel electrode 121 .
在本实施方式中,第一薄膜晶体管112的控制端和第二薄膜晶体管122的控制端均可连接至同一栅线,上述的第一栅线和第二栅线可为同一栅线;从而可通过同一栅线同时向第一薄膜晶体管112和第二薄膜晶体管122输出信号,对于具有多个像素单元的阵列基板而言,可通过同一栅线同时向多个第一薄膜晶体管112和多个第二薄膜晶体管122输出电信号。In this embodiment, both the control terminal of the first thin film transistor 112 and the control terminal of the second thin film transistor 122 can be connected to the same gate line, and the above-mentioned first gate line and the second gate line can be the same gate line; thus, Simultaneously output signals to the first thin film transistor 112 and the second thin film transistor 122 through the same gate line. The two thin film transistors 122 output electrical signals.
第一薄膜晶体管112的第一端和第二薄膜晶体管122的第一端可分别连接至不同的数据线,上述的第一数据线和第二数据线可为不同的数据线;以便于通过不同的数据线控制第一薄膜晶体管112和第二薄膜晶体管122,从而可通过不同的数据线控制第一子亚像素11和第二子亚像素12之一单独工作或同时工作。The first end of the first thin film transistor 112 and the first end of the second thin film transistor 122 can be respectively connected to different data lines, and the above-mentioned first data line and second data line can be different data lines; The data line controls the first thin film transistor 112 and the second thin film transistor 122, so that one of the first sub-sub-pixel 11 and the second sub-sub-pixel 12 can be controlled to work independently or simultaneously through different data lines.
在本公开的其它实施方式中,第一薄膜晶体管112的第一端和第二薄膜晶体管122的第一端可连接至同一数据线,上述的第一数据线和第二数据线可为同一数据线;从而可通过同一数据线同时向第一薄膜晶体管112和第二薄膜晶体管122输出信号,对于具有多个像素单元的阵列基板而言,可通过同一数据线同时向多个第一薄膜晶体管112和多个第二薄膜晶体管122输出信号。In other embodiments of the present disclosure, the first end of the first thin film transistor 112 and the first end of the second thin film transistor 122 may be connected to the same data line, and the above-mentioned first data line and second data line may be the same data line. line; so that the same data line can be used to simultaneously output signals to the first thin film transistor 112 and the second thin film transistor 122, for an array substrate with multiple pixel units, the same data line can be used to simultaneously output signals to multiple first thin film transistors 112 and a plurality of second thin film transistors 122 to output signals.
第一薄膜晶体管112的控制端和第二薄膜晶体管122的控制端还可分别连接至不同的栅线,上述的第一栅线和第二栅线为不同的栅线;以便于通过不同的栅线控制第一薄膜晶体管112和第二薄膜晶体管122,从而可通过不同的栅线控制第一子亚像素11和第二子亚像素12之一单独工作或同时工作。The control terminal of the first thin film transistor 112 and the control terminal of the second thin film transistor 122 can also be respectively connected to different gate lines, the above-mentioned first gate line and second gate line are different gate lines; The lines control the first TFT 112 and the second TFT 122 , so that one of the first sub-subpixel 11 and the second sub-subpixel 12 can be controlled to work independently or simultaneously through different gate lines.
在本实施方式中,对于亚像素1中的第一子亚像素11和第二子亚像素12的相对位置关系、第一薄膜晶体管112和第一子亚像素11的相对位置关系以及第二薄膜晶体管122和第二子亚像素12的相对位置关系均不作特殊限定,可根据实际情况改变上述的相对位置关系。举例而言,在同一像素单元中,如图1,各个第一子亚像素11可位于同一行,各个第二子亚像素12可位于另一行;或者,如图4,第一子亚像素11分为两行设置,且相邻两第一子亚像素11之间设有一个第二子亚像素12,即第一子亚像素11和第二子亚像素12间隔设置。In this embodiment, for the relative positional relationship between the first sub-sub-pixel 11 and the second sub-sub-pixel 12 in the sub-pixel 1, the relative positional relationship between the first thin-film transistor 112 and the first sub-sub-pixel 11, and the second thin film The relative positional relationship between the transistor 122 and the second sub-sub-pixel 12 is not particularly limited, and the above-mentioned relative positional relationship can be changed according to actual conditions. For example, in the same pixel unit, as shown in FIG. 1, each first sub-sub-pixel 11 can be located in the same row, and each second sub-sub-pixel 12 can be located in another row; or, as shown in FIG. 4, the first sub-sub-pixel 11 It is arranged in two rows, and a second sub-sub-pixel 12 is arranged between two adjacent first sub-sub-pixels 11 , that is, the first sub-sub-pixel 11 and the second sub-sub-pixel 12 are arranged at intervals.
本公开示例实施方式的像素单元的工作原理:The working principle of the pixel unit of the example embodiment of the present disclosure:
当仅有第一子亚像素11工作时,由于第一子亚像素11电极间距D1较小,液晶的透过率较高,此时的功耗中等,显示的亮度中等;当仅有第二子亚像素12工作时,由于第二子亚像素12电极间距D2较大,液晶的透过率较低,此时的功耗较小,亮度较低;当第一子亚像素11和第二子亚像素12同时工作时,液晶的整体透过率最高,此时的功耗最高,显示的亮度最高。When only the first sub-sub-pixel 11 is working, because the first sub-sub-pixel 11 electrode spacing D1 is relatively small, the transmittance of the liquid crystal is relatively high, the power consumption at this time is moderate, and the brightness of display is moderate; When the second sub-sub-pixel 12 is working, because the second sub-sub-pixel 12 has a larger electrode spacing D 2 , the transmittance of the liquid crystal is lower, the power consumption at this moment is smaller, and the brightness is lower; when the first sub-sub-pixel 11 and When the second sub-sub-pixels 12 work at the same time, the overall transmittance of the liquid crystal is the highest, the power consumption at this time is the highest, and the display brightness is the highest.
基于上述像素单元的工作原理,本公开示例实施方式的像素单元,便于用户根据实际情况选择亮度和功耗,扩大了适用范围。Based on the above-mentioned working principle of the pixel unit, the pixel unit in the exemplary embodiment of the present disclosure is convenient for the user to select the brightness and power consumption according to the actual situation, and expands the scope of application.
本公开阵列基板的第一种实施方式The first embodiment of the disclosed array substrate
本公开示例实施方式提供一种阵列基板,如图5,本实施方式的阵列基板可以包括栅线2、数据线3和像素单元。Example embodiments of the present disclosure provide an array substrate, as shown in FIG. 5 , the array substrate in this embodiment may include gate lines 2 , data lines 3 and pixel units.
在本实施方式中,像素单元的构成可参考上述像素单元的实施方式中的像素单元;所述像素单元的数量可以是多个,且多个像素单元呈阵列分布,即阵列基板可具有多行和多列像素单元,所述像素单元中的亚像素1也可排列成多行和多列。举例而言,在同一行像素单元中的同一行亚像素1中,如图5,各个第一子亚像素11和各个第二子亚像素12可分为两行设置,其中,各个第一子亚像素11可均位于同一行,各个第二子亚像素12可均位于另一行。In this embodiment, the composition of the pixel unit can refer to the pixel unit in the above embodiment of the pixel unit; the number of the pixel units can be multiple, and the multiple pixel units are arranged in an array, that is, the array substrate can have multiple rows and multiple columns of pixel units, the sub-pixels 1 in the pixel units may also be arranged in multiple rows and columns. For example, in the same row of sub-pixels 1 in the same row of pixel units, as shown in Figure 5, each first sub-sub-pixel 11 and each second sub-sub-pixel 12 can be divided into two rows, wherein each first The sub-pixels 11 may all be located in the same row, and each second sub-sub-pixel 12 may be located in another row.
栅线2的数量可以是多个,且多个栅线2可平行分布;在同一像素单元中,各个第一薄膜晶体管112的控制端和各个第二薄膜晶体管122的控制端均连接至同一栅线2,即同一像素单元中的第一薄膜晶体管112和第二薄膜晶体管122可被一个栅线2分隔。The number of gate lines 2 can be multiple, and multiple gate lines 2 can be distributed in parallel; in the same pixel unit, the control terminals of each first thin film transistor 112 and the control terminals of each second thin film transistor 122 are connected to the same gate Line 2 , that is, the first thin film transistor 112 and the second thin film transistor 122 in the same pixel unit may be separated by one gate line 2 .
数据线3的数量可以是多个,且多个数据线3可与多个栅线2交错设置,各个像素单元可分别位于多个数据线3与多个栅线2交错所围成的区域内;在同一像素单元中,各个第一薄膜晶体管112的第一端和各个第二薄膜晶体管122的第一端可连接至不同的数据线3。The number of data lines 3 can be multiple, and multiple data lines 3 can be arranged alternately with multiple gate lines 2, and each pixel unit can be respectively located in the area enclosed by the multiple data lines 3 and multiple gate lines 2 In the same pixel unit, the first end of each first thin film transistor 112 and the first end of each second thin film transistor 122 can be connected to different data lines 3 ;
本公开阵列基板的第二种实施方式The second embodiment of the disclosed array substrate
本公开示例实施方式提供一种阵列基板,如图6,本实施方式的阵列基板可以包括栅线2、数据线3和像素单元。Example embodiments of the present disclosure provide an array substrate, as shown in FIG. 6 , the array substrate in this embodiment may include gate lines 2 , data lines 3 and pixel units.
在本实施方式中,像素单元的构成可参考上述像素单元的实施方式中的像素单元;如图6,栅线2和数据线3的设置方式可参考上述阵列基板的第一种实施方式中的相关内容,此在不在赘述;另,各个第一子亚像素11与各个第二子亚像素12均可分为两行设置,且任一行内均分布有第一子亚像素11和第二子亚像素12,每行内的第一子亚像素11和第二子亚像素12互相间隔设置。In this embodiment, the composition of the pixel unit can refer to the pixel unit in the above-mentioned embodiment of the pixel unit; Relevant content will not be repeated here; in addition, each first sub-sub-pixel 11 and each second sub-sub-pixel 12 can be divided into two rows, and any row is distributed with the first sub-sub-pixel 11 and the second sub-pixel The sub-pixels 12, the first sub-sub-pixels 11 and the second sub-sub-pixels 12 in each row are spaced apart from each other.
上述的第一种实施方式和第二种实施方式的阵列基板,在工作时,可通过栅线2同时向连接至该栅线2的第一薄膜晶体管112和第二薄膜晶体管122发送信号;然后通过不同的数据线3分别向第一薄膜晶体管112和第二薄膜晶体管122发送信号,从而通过第一薄膜晶体管112和第二薄膜晶体管122控制第一子亚像素单元11和第二子亚像素单元12之一单独工作或同时工作;根据上述的像素单元的工作原理,可实现具有不同亮度和功耗的显示效果,便于用户根据实际情况进行选择亮度和功耗,扩大适用范围。The above-mentioned array substrates of the first embodiment and the second embodiment can simultaneously send signals to the first thin film transistor 112 and the second thin film transistor 122 connected to the gate line 2 through the gate line 2 during operation; and then Send signals to the first thin film transistor 112 and the second thin film transistor 122 through different data lines 3, so as to control the first sub-sub-pixel unit 11 and the second sub-sub-pixel unit through the first thin film transistor 112 and the second thin film transistor 122 One of the 12 works alone or at the same time; according to the above-mentioned working principle of the pixel unit, display effects with different brightness and power consumption can be realized, which is convenient for users to choose brightness and power consumption according to the actual situation, and expands the scope of application.
本公开阵列基板的第三种实施方式The third embodiment of the disclosed array substrate
本公开示例实施方式提供一种阵列基板,如图7,本实施方式的阵列基板可以包括栅线2、数据线3和像素单元。Example embodiments of the present disclosure provide an array substrate, as shown in FIG. 7 , the array substrate in this embodiment may include gate lines 2 , data lines 3 and pixel units.
在本实施方式中,像素单元的构成可参考上述像素单元的实施方式中的像素单元;所述像素单元的数量可以是多个,且多个像素单元呈阵列分布,即阵列基板可具有多行和多列像素单元,所述像素单元中的亚像素1也可排列成多行和多列。举例而言,在同一行像素单元中的同一行亚像素1中,如图7,各个第一子亚像素11和各个第二子亚像素12可分为两行设置,其中,各个第一子亚像素11可均位于同一行,各个第二子亚像素12可均位于另一行;栅线2的数量可以是多个,且多个栅线2可平行分布;在同一像素单元中,各个第一薄膜晶体管112的控制端和各个第二薄膜晶体管122的控制端可连接至不同的栅线2。In this embodiment, the composition of the pixel unit can refer to the pixel unit in the above embodiment of the pixel unit; the number of the pixel units can be multiple, and the multiple pixel units are arranged in an array, that is, the array substrate can have multiple rows and multiple columns of pixel units, the sub-pixels 1 in the pixel units may also be arranged in multiple rows and columns. For example, in the same row of sub-pixels 1 in the same row of pixel units, as shown in Figure 7, each first sub-sub-pixel 11 and each second sub-sub-pixel 12 can be divided into two rows, wherein each first The sub-pixels 11 can all be located in the same row, and each second sub-sub-pixel 12 can be located in another row; the number of gate lines 2 can be multiple, and a plurality of gate lines 2 can be distributed in parallel; in the same pixel unit, each second sub-pixel The control terminal of one thin film transistor 112 and the control terminals of each second thin film transistor 122 can be connected to different gate lines 2 .
数据线3的数量可以是多个,且多个数据线3可与多个栅线2交错设置,各个像素单元可分别位于多个数据线3与多个栅线2交错所围成的区域内;在同一所述像素单元中,各个第一薄膜晶体管112的第一端与各个第二薄膜晶体管122的第一端可连接至同一数据线3;即同一像素单元中的第一薄膜晶体管112和第二薄膜晶体管122可被一个数据线3分隔。The number of data lines 3 can be multiple, and multiple data lines 3 can be arranged alternately with multiple gate lines 2, and each pixel unit can be respectively located in the area enclosed by the multiple data lines 3 and multiple gate lines 2 ; In the same pixel unit, the first end of each first thin film transistor 112 and the first end of each second thin film transistor 122 can be connected to the same data line 3; that is, the first thin film transistor 112 and the first end of the same pixel unit The second thin film transistor 122 may be separated by one data line 3 .
本公开阵列基板的第四种实施方式Fourth Embodiment of the Disclosed Array Substrate
本公开示例实施方式提供一种阵列基板,如图8,本实施方式的阵列基板可以包括栅线2、数据线3和像素单元。Example embodiments of the present disclosure provide an array substrate, as shown in FIG. 8 , the array substrate in this embodiment may include gate lines 2 , data lines 3 and pixel units.
在本实施方式中,像素单元的构成可参考上述像素单元的实施方式中的像素单元;如图8,栅线2和数据线3的设置方式可参考上述阵列基板的第三种实施方式中的相关内容,此在不在赘述;另,如图8,各个第一子亚像素11与各个第二子亚像素12均可分为两行设置,且任一行内均分布有第一子亚像素11和第二子亚像素12,每行内的第一子亚像素11和第二子亚像素12互相间隔设置。In this embodiment, the composition of the pixel unit can refer to the pixel unit in the above-mentioned embodiment of the pixel unit; as shown in Figure 8, the arrangement of the gate line 2 and the data line 3 can refer to the above-mentioned third embodiment of the array substrate. Relevant content will not be repeated here; in addition, as shown in Figure 8, each first sub-sub-pixel 11 and each second sub-sub-pixel 12 can be divided into two rows, and any row is distributed with first sub-sub-pixels 11 and the second sub-sub-pixels 12 , the first sub-sub-pixels 11 and the second sub-sub-pixels 12 in each row are spaced apart from each other.
上述的第三种实施方式和第四种实施方式的阵列基板,在工作时,可通过数据线3同时向连接至该数据线3的第一薄膜晶体管112和第二薄膜晶体管122发送信号;并通过不同的栅线2分别向第一薄膜晶体管112和第二薄膜晶体管122发送信号,从而通过第一薄膜晶体管112和第二薄膜晶体管122控制第一子亚像素单元11和第二子亚像素单元12之一单独工作或同时工作;根据上述的像素单元的工作原理,可实现具有不同亮度和功耗的显示效果,便于用户根据实际情况进行选择亮度和功耗,扩大适用范围。The above-mentioned array substrates of the third embodiment and the fourth embodiment can simultaneously send signals to the first thin film transistor 112 and the second thin film transistor 122 connected to the data line 3 through the data line 3 during operation; and Signals are respectively sent to the first thin film transistor 112 and the second thin film transistor 122 through different gate lines 2, thereby controlling the first sub-sub-pixel unit 11 and the second sub-sub-pixel unit through the first thin film transistor 112 and the second thin film transistor 122 One of the 12 works alone or at the same time; according to the above-mentioned working principle of the pixel unit, display effects with different brightness and power consumption can be realized, which is convenient for users to choose brightness and power consumption according to the actual situation, and expands the scope of application.
需要说明的是,对于上述的阵列基板的第一种实施方式、第二种实施方式、第三种实施方式和第四种实施方式而言,第一子亚像素11和第二子亚像素12的分布方式并不限于以上列举的方式,其还可以采用其它方式,在此不再一一列举。It should be noted that, for the above-mentioned first embodiment, second embodiment, third embodiment and fourth embodiment of the array substrate, the first sub-sub-pixel 11 and the second sub-sub-pixel 12 The distribution method of is not limited to the methods listed above, and other methods can also be used, which will not be listed here.
本公开示例实施方式提供一种显示装置,本实施方式的显示装置可以包括上述任一实施方式所述的阵列基板,并能解决对应的技术问题,达到对应的技术效果,在此不再赘述。Exemplary embodiments of the present disclosure provide a display device. The display device in this embodiment may include the array substrate described in any one of the above embodiments, and can solve corresponding technical problems and achieve corresponding technical effects, which will not be repeated here.
本领域技术人员在考虑说明书及实践这里公开的发明后,将容易想到本公开的其它实施方案。本申请旨在涵盖本公开的任何变型、用途或者适应性变化,这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的,本公开的真正范围和精神由所附的权利要求指出。Other embodiments of the present disclosure will be readily apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any modification, use or adaptation of the present disclosure, and these modifications, uses or adaptations follow the general principles of the present disclosure and include common knowledge or conventional technical means in the technical field not disclosed in the present disclosure . The specification and examples are to be considered exemplary only, with the true scope and spirit of the disclosure indicated by the appended claims.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109164629A (en) * | 2018-10-10 | 2019-01-08 | 武汉华星光电技术有限公司 | Array substrate and touch-control display panel |
| CN111610677A (en) * | 2020-06-28 | 2020-09-01 | 京东方科技集团股份有限公司 | Array substrate and display device |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101479656A (en) * | 2006-06-26 | 2009-07-08 | 夏普株式会社 | display device |
| CN101685226A (en) * | 2008-09-26 | 2010-03-31 | 胜华科技股份有限公司 | Liquid crystal display panel capable of improving color cast and liquid crystal display device using same |
| CN102033369A (en) * | 2009-09-25 | 2011-04-27 | 北京京东方光电科技有限公司 | Pixel structure of FFS (fringe field switching) type TFT-LCD (thin film transistor liquid crystal display) array base plate |
| CN102292666A (en) * | 2009-05-29 | 2011-12-21 | 夏普株式会社 | Liquid crystal display element, liquid crystal display device, and display method employed in liquid crystal display element |
| US20130154911A1 (en) * | 2011-12-20 | 2013-06-20 | Chimei Innolux Corporation | Display device and electronic device |
| CN103226271A (en) * | 2012-01-26 | 2013-07-31 | 三星显示有限公司 | Liquid crystal display |
| CN104614904A (en) * | 2015-03-11 | 2015-05-13 | 京东方科技集团股份有限公司 | Pixel structure and driving method thereof, array baseplate and display device |
| CN104656322A (en) * | 2013-11-25 | 2015-05-27 | 株式会社日本显示器 | Liquid crystal display device and three-dimensional display device |
| CN105093749A (en) * | 2015-08-14 | 2015-11-25 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| US20160161803A1 (en) * | 2014-12-08 | 2016-06-09 | Samsung Display Co., Ltd. | Liquid crystal display device having branch electrodes |
-
2017
- 2017-05-05 CN CN201710312097.3A patent/CN106932976A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101479656A (en) * | 2006-06-26 | 2009-07-08 | 夏普株式会社 | display device |
| CN101685226A (en) * | 2008-09-26 | 2010-03-31 | 胜华科技股份有限公司 | Liquid crystal display panel capable of improving color cast and liquid crystal display device using same |
| CN102292666A (en) * | 2009-05-29 | 2011-12-21 | 夏普株式会社 | Liquid crystal display element, liquid crystal display device, and display method employed in liquid crystal display element |
| CN102033369A (en) * | 2009-09-25 | 2011-04-27 | 北京京东方光电科技有限公司 | Pixel structure of FFS (fringe field switching) type TFT-LCD (thin film transistor liquid crystal display) array base plate |
| US20130154911A1 (en) * | 2011-12-20 | 2013-06-20 | Chimei Innolux Corporation | Display device and electronic device |
| CN103226271A (en) * | 2012-01-26 | 2013-07-31 | 三星显示有限公司 | Liquid crystal display |
| CN104656322A (en) * | 2013-11-25 | 2015-05-27 | 株式会社日本显示器 | Liquid crystal display device and three-dimensional display device |
| US20160161803A1 (en) * | 2014-12-08 | 2016-06-09 | Samsung Display Co., Ltd. | Liquid crystal display device having branch electrodes |
| CN104614904A (en) * | 2015-03-11 | 2015-05-13 | 京东方科技集团股份有限公司 | Pixel structure and driving method thereof, array baseplate and display device |
| CN105093749A (en) * | 2015-08-14 | 2015-11-25 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109164629A (en) * | 2018-10-10 | 2019-01-08 | 武汉华星光电技术有限公司 | Array substrate and touch-control display panel |
| CN109164629B (en) * | 2018-10-10 | 2024-05-10 | 武汉华星光电技术有限公司 | Array substrate and touch display panel |
| CN111610677A (en) * | 2020-06-28 | 2020-09-01 | 京东方科技集团股份有限公司 | Array substrate and display device |
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