CN106935168A - Shift register and display device - Google Patents
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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Abstract
Description
技术领域technical field
本发明涉及一种移位寄存器,且特别涉及一种可提升可靠性的移位寄存器和具有此移位寄存器的显示装置。The invention relates to a shift register, and in particular to a shift register capable of improving reliability and a display device with the shift register.
背景技术Background technique
随着薄膜电晶体(thin film transistor;TFT)液晶显示技术的不断进步,将驱动电路整合在显示面板上的技术,例如系统面板(system on glass;SOG)等,已逐渐广泛用于现今的显示装置产品上。另一方面,对于高解析度显示装置而言,每个像素的驱动时间有限,若是驱动电路不能在驱动时间内完成对应像素的驱动,则可能导致图像显示错误数据或是其他因驱动稳定度不佳而造成的问题。因此,如何设计适用在高解析度显示装置的驱动电路,已为业界所致力的目标之一。With the continuous advancement of thin film transistor (TFT) liquid crystal display technology, the technology of integrating the driving circuit on the display panel, such as system on glass (SOG), has gradually been widely used in today's display on the device product. On the other hand, for high-resolution display devices, the driving time of each pixel is limited. If the driving circuit cannot complete the driving of the corresponding pixel within the driving time, it may cause image display error data or other factors due to poor driving stability. problems caused by good. Therefore, how to design a driving circuit suitable for a high-resolution display device has become one of the goals of the industry.
发明内容Contents of the invention
本发明的目的是在于提供一种移位寄存器和显示装置,其具有稳定的效能且不易受到其他杂讯的干扰,进而提升图像的显示品质。The purpose of the present invention is to provide a shift register and a display device, which have stable performance and are not easily disturbed by other noises, thereby improving the display quality of images.
根据本发明的上述目的,提出一种移位寄存器。此移位寄存器包含预充电单元、上拉单元、第一下拉单元和第二下拉单元。预充电单元接收第一输入信号和第二输入信号,且根据第一输入信号和第二输入信号而由第一节点输出预充电信号。预充电单元包含第一电晶体和第二电晶体。第一电晶体的闸极和第一源汲极接收第一输入信号,且第一电晶体的第二源汲极耦接第一节点并输出预充电信号。第二电晶体的闸极和第一源汲极接收第二输入信号,且第二电晶体的第二源汲极耦接第一电晶体的第二源汲极。上拉单元耦接预充电单元,其根据预充电信号、第一时钟信号和第二时钟信号而由第二节点输出扫描信号。上拉单元包含第三电晶体、电容和第四电晶体。第三电晶体的闸极接收预充电信号,第三电晶体的第一源汲极接收第一时钟信号,且第三电晶体的第二源汲极耦接第二节点并输出扫描信号。电容的第一端耦接第三电晶体的闸极,且电容的第二端耦接第三电晶体的第二源汲极。第四电晶体的闸极接收第二时钟信号,第四电晶体的第一源汲极耦接参考电位,且第四电晶体的第二源汲极耦接第三电晶体的闸极。第一下拉单元耦接预充电单元和上拉单元,其接收预充电信号、第一下拉控制信号和第二下拉控制信号,且根据预充电信号、第一下拉控制信号和第二下拉控制信号来控制是否将扫描信号下拉至参考电位。第二下拉单元耦接预充电单元和上拉单元,其接收预充电信号、第一下拉控制信号和第二下拉控制信号,且根据预充电信号、第一下拉控制信号和第二下拉控制信号来控制是否将扫描信号下拉至参考电位。According to the above object of the present invention, a shift register is proposed. The shift register includes a precharge unit, a pull-up unit, a first pull-down unit and a second pull-down unit. The pre-charging unit receives the first input signal and the second input signal, and outputs a pre-charging signal from the first node according to the first input signal and the second input signal. The pre-charging unit includes a first transistor and a second transistor. The gate and the first source-drain of the first transistor receive the first input signal, and the second source-drain of the first transistor is coupled to the first node and outputs a pre-charge signal. The gate and the first source-drain of the second transistor receive the second input signal, and the second source-drain of the second transistor is coupled to the second source-drain of the first transistor. The pull-up unit is coupled to the pre-charging unit, which outputs a scan signal from the second node according to the pre-charging signal, the first clock signal and the second clock signal. The pull-up unit includes a third transistor, a capacitor and a fourth transistor. The gate of the third transistor receives the pre-charge signal, the first source-drain of the third transistor receives the first clock signal, and the second source-drain of the third transistor is coupled to the second node and outputs a scanning signal. The first end of the capacitor is coupled to the gate of the third transistor, and the second end of the capacitor is coupled to the second source-drain of the third transistor. The gate of the fourth transistor receives the second clock signal, the first source-drain of the fourth transistor is coupled to the reference potential, and the second source-drain of the fourth transistor is coupled to the gate of the third transistor. The first pull-down unit is coupled to the pre-charge unit and the pull-up unit, which receives the pre-charge signal, the first pull-down control signal and the second pull-down control signal, and according to the pre-charge signal, the first pull-down control signal and the second pull-down control signal, Control signal to control whether to pull down the scan signal to the reference potential. The second pull-down unit is coupled to the pre-charge unit and the pull-up unit, which receives the pre-charge signal, the first pull-down control signal and the second pull-down control signal, and according to the pre-charge signal, the first pull-down control signal and the second pull-down control signal to control whether to pull down the scan signal to the reference potential.
依据本发明的一实施例,上述第一输入信号是起始信号,且上述第二输入信号是对应移位寄存器的下一级移位寄存器所输出的扫描信号。According to an embodiment of the present invention, the above-mentioned first input signal is a start signal, and the above-mentioned second input signal is a scan signal output by a next-stage shift register corresponding to the shift register.
依据本发明的又一实施例,上述第一输入信号是对应移位寄存器的上一级移位寄存器所输出的扫描信号,且上述第二输入信号是对应移位寄存器的下一级移位寄存器所输出的扫描信号。According to yet another embodiment of the present invention, the above-mentioned first input signal is the scanning signal output by the upper-stage shift register corresponding to the shift register, and the above-mentioned second input signal is the output of the next-stage shift register corresponding to the shift register The output scan signal.
依据本发明的又一实施例,上述第一输入信号是对应移位寄存器的上一级移位寄存器所输出的扫描信号,且上述第二输入信号是结束信号。According to yet another embodiment of the present invention, the above-mentioned first input signal is a scan signal output by the upper-stage shift register corresponding to the shift register, and the above-mentioned second input signal is an end signal.
依据本发明的又一实施例,上述第一时钟信号在第一时间点时由高准位转换至低准位,上述第二时钟信号在第一时间点后的第二时间点时由低准位转换至高准位,第二时间点与第一时间点相差两个数据写入时间。According to yet another embodiment of the present invention, the first clock signal is switched from a high level to a low level at a first time point, and the second clock signal is switched from a low level to a low level at a second time point after the first time point. The bit is switched to a high level, and the second time point is two data writing times different from the first time point.
依据本发明的又一实施例,上述第一下拉单元包含第五电晶体、第六电晶体、第七电晶体、第八电晶体和第九电晶体。第五电晶体的闸极和第一源汲极输入第一下拉控制信号。第六电晶体的闸极输入第二下拉控制信号,第六电晶体的第一源汲极耦接参考电位,且第六电晶体的第二源汲极耦接第五电晶体的第二源汲极。第七电晶体的闸极耦接第一节点,第七电晶体的第一源汲极耦接参考电位,且第七电晶体的第二源汲极耦接第五电晶体的第二源汲极。第八电晶体的闸极耦接第七电晶体的第二源汲极,第八电晶体的第一源汲极耦接参考电位,且第八电晶体的第二源汲极耦接第一节点。第九电晶体的闸极耦接第七电晶体的第二源汲极,第九电晶体的第一源汲极耦接参考电位,且第九电晶体的第二源汲极耦接第二节点。According to yet another embodiment of the present invention, the first pull-down unit includes a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, and a ninth transistor. A first pull-down control signal is input to the gate and the first source-drain of the fifth transistor. The gate of the sixth transistor inputs the second pull-down control signal, the first source-drain of the sixth transistor is coupled to the reference potential, and the second source-drain of the sixth transistor is coupled to the second source of the fifth transistor Drain pole. The gate of the seventh transistor is coupled to the first node, the first source-drain of the seventh transistor is coupled to the reference potential, and the second source-drain of the seventh transistor is coupled to the second source-drain of the fifth transistor pole. The gate of the eighth transistor is coupled to the second source-drain of the seventh transistor, the first source-drain of the eighth transistor is coupled to the reference potential, and the second source-drain of the eighth transistor is coupled to the first node. The gate of the ninth transistor is coupled to the second source-drain of the seventh transistor, the first source-drain of the ninth transistor is coupled to the reference potential, and the second source-drain of the ninth transistor is coupled to the second node.
依据本发明的又一实施例,上述第二下拉单元包含第十电晶体、第十一电晶体、第十二电晶体、第十三电晶体和第十四电晶体。第十电晶体的闸极和第一源汲极输入第二下拉控制信号。第十一电晶体的闸极输入第一下拉控制信号,第十一电晶体的第一源汲极耦接参考电位,且第十一电晶体的第二源汲极耦接第十电晶体的第二源汲极。第十二电晶体的闸极耦接第一节点,第十二电晶体的第一源汲极耦接参考电位,且第十二电晶体的第二源汲极耦接第十电晶体的第二源汲极。第十三电晶体的闸极耦接第十二电晶体的第二源汲极,第十三电晶体的第一源汲极耦接参考电位,且第十三电晶体的第二源汲极耦接第一节点。第十四电晶体的闸极耦接第十二电晶体的第二源汲极,第十四电晶体的第一源汲极耦接参考电位,且第十四电晶体的第二源汲极耦接第二节点。According to yet another embodiment of the present invention, the above-mentioned second pull-down unit includes a tenth transistor, an eleventh transistor, a twelfth transistor, a thirteenth transistor, and a fourteenth transistor. The gate and the first source-drain of the tenth transistor input the second pull-down control signal. The gate of the eleventh transistor inputs the first pull-down control signal, the first source-drain of the eleventh transistor is coupled to the reference potential, and the second source-drain of the eleventh transistor is coupled to the tenth transistor The second source-sink. The gate of the twelfth transistor is coupled to the first node, the first source-drain of the twelfth transistor is coupled to the reference potential, and the second source-drain of the twelfth transistor is coupled to the first node of the tenth transistor. Two sources and drains. The gate of the thirteenth transistor is coupled to the second source-drain of the twelfth transistor, the first source-drain of the thirteenth transistor is coupled to the reference potential, and the second source-drain of the thirteenth transistor coupled to the first node. The gate of the fourteenth transistor is coupled to the second source-drain of the twelfth transistor, the first source-drain of the fourteenth transistor is coupled to the reference potential, and the second source-drain of the fourteenth transistor coupled to the second node.
根据本发明的上述目的,另提出一种显示装置。此显示装置包含显示面板、多个时钟信号线和移位寄存装置。此些时钟信号线用以提供多个时钟信号。移位寄存装置用以驱动显示面板,且其包含多个移位寄存器。每个移位寄存器与其上一级移位寄存器或其下一级移位寄存器相互耦接,且每个移位寄存器包含预充电单元、上拉单元、第一下拉单元和第二下拉单元。预充电单元接收第一输入信号和第二输入信号,且根据第一输入信号和第二输入信号而由第一节点输出预充电信号。预充电单元包含第一电晶体和第二电晶体。第一电晶体的闸极和第一源汲极接收第一输入信号,且第一电晶体的第二源汲极耦接第一节点并输出预充电信号。第二电晶体的闸极和第一源汲极接收第二输入信号,且第二电晶体的第二源汲极耦接第一电晶体的第二源汲极。上拉单元耦接预充电单元,其根据预充电信号、第一时钟信号和第二时钟信号而由第二节点输出扫描信号。上拉单元包含第三电晶体、电容和第四电晶体。第三电晶体的闸极接收预充电信号,第三电晶体的第一源汲极耦接此些时钟信号线中用以提供第一时钟信号的第一时钟信号线,且第三电晶体的第二源汲极耦接第二节点并输出扫描信号。电容的第一端耦接第三电晶体的闸极,且电容的第二端耦接第三电晶体的第二源汲极。第四电晶体的闸极耦接此些时钟信号线中用以提供第二时钟信号的第二时钟信号线,第四电晶体的第一源汲极耦接参考电位,且第四电晶体的第二源汲极耦接第三电晶体的闸极。第一下拉单元耦接预充电单元和上拉单元,其接收预充电信号、第一下拉控制信号和第二下拉控制信号,且根据预充电信号、第一下拉控制信号和第二下拉控制信号来控制是否将扫描信号下拉至参考电位。第二下拉单元耦接预充电单元和上拉单元,其接收预充电信号、第一下拉控制信号和第二下拉控制信号,且根据预充电信号、第一下拉控制信号和第二下拉控制信号来控制是否将扫描信号下拉至参考电位。According to the above object of the present invention, another display device is proposed. The display device includes a display panel, a plurality of clock signal lines and a shift register device. These clock signal lines are used to provide multiple clock signals. The shift register device is used to drive the display panel, and it includes a plurality of shift registers. Each shift register is coupled to its upper stage shift register or its lower stage shift register, and each shift register includes a precharge unit, a pull-up unit, a first pull-down unit and a second pull-down unit. The pre-charging unit receives the first input signal and the second input signal, and outputs a pre-charging signal from the first node according to the first input signal and the second input signal. The pre-charging unit includes a first transistor and a second transistor. The gate and the first source-drain of the first transistor receive the first input signal, and the second source-drain of the first transistor is coupled to the first node and outputs a pre-charge signal. The gate and the first source-drain of the second transistor receive the second input signal, and the second source-drain of the second transistor is coupled to the second source-drain of the first transistor. The pull-up unit is coupled to the pre-charging unit, which outputs a scan signal from the second node according to the pre-charging signal, the first clock signal and the second clock signal. The pull-up unit includes a third transistor, a capacitor and a fourth transistor. The gate of the third transistor receives the precharge signal, the first source-drain of the third transistor is coupled to the first clock signal line for providing the first clock signal among the clock signal lines, and the third transistor’s The second source-drain is coupled to the second node and outputs a scan signal. The first end of the capacitor is coupled to the gate of the third transistor, and the second end of the capacitor is coupled to the second source-drain of the third transistor. The gate of the fourth transistor is coupled to the second clock signal line for providing the second clock signal among the clock signal lines, the first source-drain of the fourth transistor is coupled to the reference potential, and the fourth transistor The second source-drain is coupled to the gate of the third transistor. The first pull-down unit is coupled to the pre-charge unit and the pull-up unit, which receives the pre-charge signal, the first pull-down control signal and the second pull-down control signal, and according to the pre-charge signal, the first pull-down control signal and the second pull-down control signal, Control signal to control whether to pull down the scan signal to the reference potential. The second pull-down unit is coupled to the pre-charge unit and the pull-up unit, which receives the pre-charge signal, the first pull-down control signal and the second pull-down control signal, and according to the pre-charge signal, the first pull-down control signal and the second pull-down control signal to control whether to pull down the scan signal to the reference potential.
依据本发明的一实施例,上述此些移位寄存器是N级移位寄存器,其中第1级移位寄存器中的第一输入信号和第二输入信号分别是起始信号和第2级移位寄存器所输出的扫描信号,第N级移位寄存器中的第一输入信号和第二输入信号分别是第(N-1)级移位寄存器所输出的扫描信号和结束信号,且第i级移位寄存器中的第一输入信号和第二输入信号分别是第(i-1)级移位寄存器所输出的扫描信号和第(i+1)级移位寄存器所输出的扫描信号,其中i是大于1且小于N的正整数。According to an embodiment of the present invention, the above-mentioned shift registers are N-stage shift registers, wherein the first input signal and the second input signal in the first-stage shift register are the start signal and the second-stage shift register respectively. The scan signal output by the register, the first input signal and the second input signal in the Nth stage shift register are respectively the scan signal and the end signal output by the (N-1) stage shift register, and the i stage shift register The first input signal and the second input signal in the bit register are respectively the scan signal output by the (i-1) shift register and the scan signal output by the (i+1) shift register, where i is A positive integer greater than 1 and less than N.
依据本发明的又一实施例,上述第一时钟信号在第一时间点时由高准位转换至低准位,上述第二时钟信号在第一时间点后的第二时间点时由低准位转换至高准位,第二时间点与第一时间点相差两个数据写入时间。According to yet another embodiment of the present invention, the first clock signal is switched from a high level to a low level at a first time point, and the second clock signal is switched from a low level to a low level at a second time point after the first time point. The bit is switched to a high level, and the second time point is two data writing times different from the first time point.
根据本发明的上述目的,另提出一种移位寄存器。此移位寄存器包含预充电单元、上拉单元、第一下拉单元和第二下拉单元。预充电单元接收第一输入信号和第二输入信号,且根据第一输入信号和第二输入信号而由第一节点输出预充电信号。上拉单元耦接预充电单元,其根据预充电信号,第一时钟信号和第二时钟信号而由第二节点输出扫描信号。第二下拉单元耦接预充电单元和上拉单元,其接收预充电信号、第一下拉控制信号和第二下拉控制信号,且根据预充电信号、第一下拉控制信号和第二下拉控制信号来控制是否将扫描信号下拉至参考电位。第一输入信号是起始信号,且第二输入信号是对应移位寄存器的下一级移位寄存器所输出的扫描信号。According to the above object of the present invention, another shift register is proposed. The shift register includes a precharge unit, a pull-up unit, a first pull-down unit and a second pull-down unit. The pre-charging unit receives the first input signal and the second input signal, and outputs a pre-charging signal from the first node according to the first input signal and the second input signal. The pull-up unit is coupled to the pre-charging unit, which outputs a scan signal from the second node according to the pre-charging signal, the first clock signal and the second clock signal. The second pull-down unit is coupled to the pre-charge unit and the pull-up unit, which receives the pre-charge signal, the first pull-down control signal and the second pull-down control signal, and according to the pre-charge signal, the first pull-down control signal and the second pull-down control signal to control whether to pull down the scan signal to the reference potential. The first input signal is a start signal, and the second input signal is a scan signal output by a next-stage shift register corresponding to the shift register.
根据本发明的上述目的,另提出一种移位寄存器。此移位寄存器包含预充电单元、上拉单元、第一下拉单元和第二下拉单元。预充电单元接收第一输入信号和第二输入信号,且根据第一输入信号和第二输入信号而由第一节点输出预充电信号。上拉单元耦接预充电单元,其根据预充电信号,第一时钟信号和第二时钟信号而由第二节点输出扫描信号。第二下拉单元耦接预充电单元和上拉单元,其接收预充电信号、第一下拉控制信号和第二下拉控制信号,且根据预充电信号、第一下拉控制信号和第二下拉控制信号来控制是否将扫描信号下拉至参考电位。第一输入信号是对应移位寄存器的上一级移位寄存器所输出的扫描信号,且第二输入信号是对应移位寄存器的下一级移位寄存器所输出的扫描信号。According to the above object of the present invention, another shift register is proposed. The shift register includes a precharge unit, a pull-up unit, a first pull-down unit and a second pull-down unit. The pre-charging unit receives the first input signal and the second input signal, and outputs a pre-charging signal from the first node according to the first input signal and the second input signal. The pull-up unit is coupled to the pre-charging unit, which outputs a scan signal from the second node according to the pre-charging signal, the first clock signal and the second clock signal. The second pull-down unit is coupled to the pre-charge unit and the pull-up unit, which receives the pre-charge signal, the first pull-down control signal and the second pull-down control signal, and according to the pre-charge signal, the first pull-down control signal and the second pull-down control signal to control whether to pull down the scan signal to the reference potential. The first input signal is a scan signal output by a shift register corresponding to an upper stage of the shift register, and the second input signal is a scan signal output by a shift register corresponding to a lower stage of the shift register.
根据本发明的上述目的,另提出一种移位寄存器。此移位寄存器包含预充电单元、上拉单元、第一下拉单元和第二下拉单元。预充电单元接收第一输入信号和第二输入信号,且根据第一输入信号和第二输入信号而由第一节点输出预充电信号。上拉单元耦接预充电单元,其根据预充电信号,第一时钟信号和第二时钟信号而由第二节点输出扫描信号。第二下拉单元耦接预充电单元和上拉单元,其接收预充电信号、第一下拉控制信号和第二下拉控制信号,且根据预充电信号、第一下拉控制信号和第二下拉控制信号来控制是否将扫描信号下拉至参考电位。第一输入信号是对应移位寄存器的上一级移位寄存器所输出的扫描信号,且第二输入信号是结束信号。According to the above object of the present invention, another shift register is proposed. The shift register includes a precharge unit, a pull-up unit, a first pull-down unit and a second pull-down unit. The pre-charging unit receives the first input signal and the second input signal, and outputs a pre-charging signal from the first node according to the first input signal and the second input signal. The pull-up unit is coupled to the pre-charging unit, which outputs a scan signal from the second node according to the pre-charging signal, the first clock signal and the second clock signal. The second pull-down unit is coupled to the pre-charge unit and the pull-up unit, which receives the pre-charge signal, the first pull-down control signal and the second pull-down control signal, and according to the pre-charge signal, the first pull-down control signal and the second pull-down control signal to control whether to pull down the scan signal to the reference potential. The first input signal is the scan signal output by the upper stage shift register corresponding to the shift register, and the second input signal is the end signal.
本发明的优点在于,移位寄存器具有稳定的驱动效能且不易受到其他杂讯的干扰,且使用此移位寄存器的显示装置可提升其显示品质,避免在显示的图像中产生例如水波纹或横纹等问题,使其具有高可靠度和高稳定度。The advantage of the present invention is that the shift register has stable driving performance and is not easily disturbed by other noises, and the display device using the shift register can improve its display quality, avoiding water ripples or horizontal lines in the displayed image. It has high reliability and high stability due to problems such as grain.
附图说明Description of drawings
为了更完整了解实施例及其优点,现参照结合所附图式所做的下列描述,其中:For a more complete understanding of the embodiments and advantages thereof, reference is now made to the following description taken in conjunction with the accompanying drawings, in which:
图1绘示依据本发明实施例的显示装置的示意图;FIG. 1 shows a schematic diagram of a display device according to an embodiment of the present invention;
图2绘示依据本发明实施例的闸极驱动电路的示意图;FIG. 2 shows a schematic diagram of a gate driving circuit according to an embodiment of the present invention;
图3绘示依据本发明实施例的移位寄存器的等效电路图;以及FIG. 3 shows an equivalent circuit diagram of a shift register according to an embodiment of the present invention; and
图4绘示图2的闸极驱动电路的时序图。FIG. 4 is a timing diagram of the gate driving circuit of FIG. 2 .
具体实施方式detailed description
以下仔细讨论本发明的实施例。然而,可以理解的是,实施例提供许多可应用的概念,其可实施于各式各样的特定内容中。所讨论、公开的实施例仅供说明,并非用以限定本发明的范围。Embodiments of the invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific contexts. The discussed and disclosed embodiments are for illustration only and are not intended to limit the scope of the present invention.
请参照图1,其绘示依据本发明实施例的显示装置100的示意图。显示装置100包括显示面板110、源极驱动器120和闸极驱动器130A、130B。显示面板110具有多个排列成阵列的像素,其共同用以显示图像。显示面板110可以是例如扭转向列(twisted nematic;TN)型、水平切换(in-plane switching;IPS)型、边缘电场切换(fringe-field switching;FFS)型或垂直配向(verticalalignment;VA)型等各种类型的液晶显示面板,或是有机发光二极管显示(organic light-emitting diode;OLED)面板等,但不限于此。源极驱动器120电性连接至显示面板110,其用以将图像数据转换为源极驱动信号,且将源极驱动信号传输至显示面板110。如图1所示,闸极驱动器130A、130B分别设置于显示面板110的左右两侧,且共同用以将闸极驱动信号传输至显示面板110。在其他实施例中,闸极驱动器130A、130B的设置位置可依据不同的设计需求而对应调整。显示面板110受到源极驱动信号和闸极驱动信号的驱动而显示图像。Please refer to FIG. 1 , which shows a schematic diagram of a display device 100 according to an embodiment of the present invention. The display device 100 includes a display panel 110 , a source driver 120 and gate drivers 130A, 130B. The display panel 110 has a plurality of pixels arranged in an array, which are commonly used to display images. The display panel 110 may be, for example, a twisted nematic (TN) type, an in-plane switching (IPS) type, a fringe-field switching (FFS) type, or a vertical alignment (VA) type. Various types of liquid crystal display panels, or organic light-emitting diode (OLED) panels, etc., but not limited thereto. The source driver 120 is electrically connected to the display panel 110 for converting image data into source driving signals and transmitting the source driving signals to the display panel 110 . As shown in FIG. 1 , the gate drivers 130A and 130B are respectively disposed on the left and right sides of the display panel 110 , and are jointly used to transmit gate driving signals to the display panel 110 . In other embodiments, the positions of the gate drivers 130A and 130B can be correspondingly adjusted according to different design requirements. The display panel 110 is driven by the source driving signal and the gate driving signal to display images.
请参照图2,图2绘示依据本发明实施例的闸极驱动电路200的示意图。闸极驱动电路200适用于图1的显示装置100或是其他类似的显示装置。以下以设置于使用于图1的显示装置100为例说明。闸极驱动电路200分为第一闸极驱动电路200A和第二闸极驱动电路200B,其中第一闸极驱动电路200A为闸极驱动器130A的一部分,且第二闸极驱动电路200B为闸极驱动器130B的一部分。Please refer to FIG. 2 , which is a schematic diagram of a gate driving circuit 200 according to an embodiment of the present invention. The gate driving circuit 200 is applicable to the display device 100 of FIG. 1 or other similar display devices. The following will be described by taking the display device 100 used in FIG. 1 as an example. The gate driving circuit 200 is divided into a first gate driving circuit 200A and a second gate driving circuit 200B, wherein the first gate driving circuit 200A is a part of the gate driver 130A, and the second gate driving circuit 200B is a gate part of the driver 130B.
第一闸极驱动电路200A包含时钟信号线L1~L8、起始信号线S、结束信号线R和N级第一移位寄存器210A(1)~210A(N),且第二闸极驱动电路200B包括时钟信号线L1’~L8’、起始信号线S’、结束信号线R’和N级第二移位寄存器210B(1)~210B(N),其中N为大于或等于8的正整数。在一些实施例中,N为8的多倍数。时钟信号线L1~L8用以分别提供时钟信号C1~C8至对应的第一移位寄存器210A(1)~210A(N),且时钟信号线L1’~L8’用以分别提供时钟信号C1’~C8’至对应的第二移位寄存器210B(1)~210B(N),其中每个时钟信号C1~C8、C1’~C8’的周期相同。在本实施例中,时钟信号C1~C8、C1’~C8’的周期为16个数据写入时间H(每个数据写入时间H各占1/16个时钟信号周期)。时钟信号C1~C8依序向后平移两个数据写入时间H。此外,起始信号线S提供起始信号STV至第1级第一移位寄存器210A(1),起始信号线S’提供起始信号STV’至第1级第二移位寄存器210B(1),结束信号线R提供结束信号RSTV至第N级第一移位寄存器210A(N),且结束信号线R’提供结束信号RSTV’至第N级第二移位寄存器210B(N)。The first gate drive circuit 200A includes clock signal lines L1-L8, start signal line S, end signal line R, and N-stage first shift registers 210A(1)-210A(N), and the second gate drive circuit 200B includes clock signal lines L1'~L8', start signal line S', end signal line R' and N-stage second shift registers 210B(1)~210B(N), where N is a positive number greater than or equal to 8 integer. In some embodiments, N is a multiple of 8. The clock signal lines L1-L8 are used to respectively provide the clock signals C1-C8 to the corresponding first shift registers 210A(1)-210A(N), and the clock signal lines L1'-L8' are used to respectively provide the clock signal C1' ~C8' to the corresponding second shift registers 210B(1)~210B(N), wherein the period of each clock signal C1~C8, C1'~C8' is the same. In this embodiment, the period of the clock signals C1-C8, C1'-C8' is 16 data write-in times H (each data write-in time H occupies 1/16 clock signal period). The clock signals C1 - C8 are shifted backward by two data writing times H in sequence. In addition, the start signal line S provides a start signal STV to the first shift register 210A (1) of the first stage, and the start signal line S' provides a start signal STV' to the second shift register 210B (1) of the first stage. ), the end signal line R provides the end signal RSTV to the Nth stage first shift register 210A(N), and the end signal line R' provides the end signal RSTV' to the Nth stage second shift register 210B(N).
第一移位寄存器210A(1)~210A(N)分别产生扫描信号OUT(1)~OUT(N),其用以在特定的数据写入时间驱动显示面板110的奇数像素行(row)。第二移位寄存器210B(1)~210B(N)分别产生扫描信号OUT’(1)~OUT’(N),其用以在特定的数据写入时间驱动显示面板110的偶数像素行。同级的扫描信号OUT(1)~OUT(N)和扫描信号OUT’(1)~OUT’(N)相差一个数据写入时间H。例如,第1级扫描信号OUT(1)落后第1级扫描信号OUT’(1)一个数据写入时间H。The first shift registers 210A( 1 )˜ 210A(N) respectively generate scan signals OUT( 1 )˜OUT(N), which are used to drive odd pixel rows (rows) of the display panel 110 at a specific data writing time. The second shift registers 210B(1)˜210B(N) respectively generate scanning signals OUT'(1)˜OUT'(N), which are used to drive the even pixel rows of the display panel 110 at a specific data writing time. The scanning signals OUT(1)~OUT(N) of the same level and the scanning signals OUT'(1)~OUT'(N) differ by a data writing time H. For example, the first-level scan signal OUT(1) lags behind the first-level scan signal OUT'(1) by a data writing time H.
在图2的闸极驱动电路200中,每个第一移位寄存器210A(1)~210A(N)和每个第二移位寄存器210B(1)~210B(N)均与其上一级移位寄存器或其下一级移位寄存器相互耦接,且利用其上一级移位寄存器或其下一级移位寄存器输出的扫描信号来控制其输出的扫描信号准位,故闸极驱动电路200可减少额外控制信号的使用,且在其电路布局上可减少信号线路的跨接。In the gate drive circuit 200 of FIG. 2 , each of the first shift registers 210A(1)-210A(N) and each of the second shift registers 210B(1)-210B(N) are shifted with their upper stage The bit register or its next-stage shift register are coupled to each other, and use the scan signal output by its upper-stage shift register or its next-stage shift register to control the output scan signal level, so the gate drive circuit The 200 can reduce the use of additional control signals, and can reduce the crossover of signal lines in its circuit layout.
图3绘示依据本发明实施例的移位寄存器300的等效电路图。移位寄存器300可以是图2的第一移位寄存器210A(1)~210A(N)和第二移位寄存器210B(1)~210B(N)之中的任何一个。移位寄存器300包含预充电单元310、上拉单元320、第一下拉单元330和第二下拉单元340。FIG. 3 is an equivalent circuit diagram of a shift register 300 according to an embodiment of the present invention. The shift register 300 may be any one of the first shift registers 210A(1)˜210A(N) and the second shift registers 210B(1)˜210B(N) of FIG. 2 . The shift register 300 includes a precharge unit 310 , a pull-up unit 320 , a first pull-down unit 330 and a second pull-down unit 340 .
预充电单元310接收输入信号IN1、IN2,且根据输入信号IN1、IN2而由节点X输出预充电信号。预充电单元310包含电晶体M1、M2,其中电晶体M1的闸极和第一源汲极接收输入信号IN1,电晶体M1的第二源汲极耦接节点X输出预充电信号,电晶体M2的闸极和第一源汲极接收输入信号IN2,且电晶体M2的第二源汲极耦接电晶体M1的第二源汲极。The pre-charging unit 310 receives input signals IN1, IN2, and outputs a pre-charging signal from node X according to the input signals IN1, IN2. The pre-charging unit 310 includes transistors M1 and M2, wherein the gate and the first source-drain of the transistor M1 receive the input signal IN1, the second source-drain of the transistor M1 is coupled to node X to output a pre-charge signal, and the transistor M2 The gate and the first source-drain of the transistor M2 receive the input signal IN2, and the second source-drain of the transistor M2 is coupled to the second source-drain of the transistor M1.
若移位寄存器300为图2中的第1级第一移位寄存器210A(1)或第1级第二移位寄存器210B(1),则输入信号IN1为起始信号STV或STV’,且输入信号IN2为第2级第一移位寄存器210A(2)输出的扫描信号OUT(2)或第2级第二移位寄存器210B(2)输出的扫描信号OUT’(2)。If the shift register 300 is the first shift register 210A(1) of the first stage or the second shift register 210B(1) of the first stage in FIG. 2, the input signal IN1 is the start signal STV or STV', and The input signal IN2 is the scanning signal OUT(2) output by the first shift register 210A(2) of the second stage or the scanning signal OUT′(2) output by the second shift register 210B(2) of the second stage.
若移位寄存器300为图2中的第2至(N-1)级第一移位寄存器210A(2)~210A(N-1)与第2至(N-1)级第二移位寄存器210B(2)~210B(N-1)中的任何一个,则输入信号IN1和输入信号IN2分别为其上一级第一移位寄存器输出的扫描信号和其下一级第一移位寄存器输出的扫描信号,或是分别为其上一级第二移位寄存器输出的扫描信号和其下一级第二移位寄存器输出的扫描信号。以第i级第一移位寄存器210A(i)为例(i是大于1且小于N的正整数),输入信号IN1为第(i-1)级移位寄存器210A(i-1)输出的扫描信号OUT(i-1),且输入信号IN2为为第(i+1)级移位寄存器210A(i+1)输出的扫描信号OUT(i+1)。If the shift register 300 is the first shift register 210A(2)-210A(N-1) of the second to (N-1) stages in FIG. 2 and the second shift register of the second to (N-1) stages Any one of 210B(2)~210B(N-1), the input signal IN1 and the input signal IN2 are the scanning signal output by the first shift register of the upper stage and the output of the first shift register of the next stage respectively. The scanning signal, or the scanning signal output by the second shift register of the upper stage and the scanning signal output by the second shift register of the lower stage respectively. Taking the i-th stage first shift register 210A(i) as an example (i is a positive integer greater than 1 and less than N), the input signal IN1 is output by the (i-1)-th stage shift register 210A(i-1) The scan signal OUT(i−1), and the input signal IN2 is the scan signal OUT(i+1) output by the (i+1)th shift register 210A(i+1).
若移位寄存器300为图2中的第N级第一移位寄存器210A(N)或第N级第二移位寄存器210B(N),则输入信号IN1为第(N-1)级第一移位寄存器210A(N-1)输出的扫描信号OUT(N-1)或第(N-1)级第二移位寄存器210B(N-1)输出的扫描信号OUT’(N-1),且输入信号IN2为结束信号RSTV或RSTV’。If the shift register 300 is the Nth stage first shift register 210A (N) or the Nth stage second shift register 210B (N) in FIG. 2 , then the input signal IN1 is the first (N-1) stage shift register. The scan signal OUT(N-1) output by the shift register 210A(N-1) or the scan signal OUT'(N-1) output by the second shift register 210B(N-1) of the (N-1)th stage, And the input signal IN2 is the end signal RSTV or RSTV'.
上拉单元320耦接预充电单元310,其接收预充电信号和时钟信号CN1、CN2,且根据预充电信号和时钟信号CN1、CN2由节点Y输出扫描信号OUT。上拉单元320包括电晶体M3、M4和电容Cx。电晶体M3的闸极接收预充电信号,电晶体M3的第一源汲极接收时钟信号CN1,且电晶体M3的第二源汲极耦接节点Y并输出扫描信号OUT。电容Cx的第一端耦接电晶体M3的闸极,且电容Cx的第二端耦接电晶体M3的第二源汲极。电晶体M4的闸极接收时钟信号CN2,电晶体M4的第一源汲极耦接参考电位VGL,且电晶体M4的第二源汲极耦接电晶体M3的闸极。在本实施例中,电晶体M3和M4具有相同的临界电压Vt。在其他实施例中,电晶体M3和M4可具有不同的临界电压。The pull-up unit 320 is coupled to the pre-charging unit 310, which receives the pre-charging signal and the clock signals CN1, CN2, and outputs the scan signal OUT from the node Y according to the pre-charging signal and the clock signals CN1, CN2. The pull-up unit 320 includes transistors M3, M4 and a capacitor Cx. The gate of the transistor M3 receives the pre-charge signal, the first source-drain of the transistor M3 receives the clock signal CN1, and the second source-drain of the transistor M3 is coupled to the node Y and outputs the scanning signal OUT. A first end of the capacitor Cx is coupled to the gate of the transistor M3, and a second end of the capacitor Cx is coupled to the second source and drain of the transistor M3. The gate of the transistor M4 receives the clock signal CN2, the first source-drain of the transistor M4 is coupled to the reference potential VGL, and the second source-drain of the transistor M4 is coupled to the gate of the transistor M3. In this embodiment, transistors M3 and M4 have the same threshold voltage Vt. In other embodiments, transistors M3 and M4 may have different threshold voltages.
时钟信号CN1、CN2分别为时钟信号C1~C8中的不同两个或时钟信号C1’~C8’中的不同两个,且时钟信号CN1、CN2相差10个数据写入时间H。换句话说,时钟信号CN1由高准位转换至低准位的时间点与时钟信号CN2由低准位转换至高准位的时间点相差两个数据写入时间H。举例而言,当时钟信号CN1为时钟信号C1时,时钟信号CN2可以是时钟信号C6。参考图4,时钟信号C1在时间点t2时由低准位转换至高准位,时钟信号C6则在时间点t12时由低准位转换至高准位,其中时间点t12与时间点t2相差10个数据写入时间H。换言之,时钟信号C1在时间点t10时已由高准位转换至低准位,而时钟信号C6在时间点t12时才由低准位转换至高准位,其中时间点t12与时间点t10相差两个数据写入时间H。The clock signals CN1 and CN2 are different two of the clock signals C1 to C8 or different two of the clock signals C1' to C8', and the difference between the clock signals CN1 and CN2 is 10 data writing time H. In other words, the time point when the clock signal CN1 transitions from the high level to the low level differs from the time point when the clock signal CN2 transitions from the low level to the high level by two data writing time H. For example, when the clock signal CN1 is the clock signal C1, the clock signal CN2 can be the clock signal C6. Referring to FIG. 4 , the clock signal C1 transitions from a low level to a high level at time t2, and the clock signal C6 transitions from a low level to a high level at time t12, where the difference between time t12 and time t2 is 10 Data write time H. In other words, the clock signal C1 has switched from a high level to a low level at the time point t10, and the clock signal C6 has switched from a low level to a high level at the time point t12, wherein the time point t12 is two times different from the time point t10. data write time H.
第一下拉单元330耦接预充电单元310和上拉单元320,其接收预充电信号和下拉控制信号GPWL1、GPWL2,且根据预充电信号和下拉控制信号GPWL1、GPWL2来控制是否将扫描信号OUT下拉至参考电位VGL。在第一下拉单元330将扫描信号OUT下拉至参考电位VGL后,第一下拉单元330将扫描信号OUT维持在参考电位VGL。第一下拉单元330包含电晶体M5~M9。电晶体M5~M9可以是非晶硅薄膜电晶体或低温多晶硅薄膜电晶体等,但不限于此。电晶体M5的闸极和第一源汲极输入下拉控制信号GPWL1。电晶体M6的闸极输入下拉控制信号GPWL2,电晶体M6的第一源汲极耦接参考电位VGL,且电晶体M6的第二源汲极耦接电晶体M5的第二源汲极。电晶体M7的闸极耦接节点X,电晶体M7的第一源汲极耦接参考电位VGL,且电晶体M7的第二源汲极耦接电晶体M5的第二源汲极。电晶体M8的闸极耦接电晶体M7的第二源汲极,电晶体M8的第一源汲极耦接参考电位VGL,且电晶体M8的第二源汲极耦接节点X。电晶体M9的闸极耦接电晶体M7的第二源汲极,电晶体M9的第一源汲极耦接参考电位VGL,且电晶体M9的第二源汲极耦接节点Y。The first pull-down unit 330 is coupled to the pre-charge unit 310 and the pull-up unit 320, which receives the pre-charge signal and the pull-down control signal GPWL1, GPWL2, and controls whether to output the scan signal OUT according to the pre-charge signal and the pull-down control signal GPWL1, GPWL2. Pull down to reference potential VGL. After the first pull-down unit 330 pulls down the scan signal OUT to the reference potential VGL, the first pull-down unit 330 maintains the scan signal OUT at the reference potential VGL. The first pull-down unit 330 includes transistors M5 - M9 . The transistors M5 - M9 may be amorphous silicon thin film transistors or low temperature polysilicon thin film transistors, etc., but are not limited thereto. The gate and the first source-drain of the transistor M5 input the pull-down control signal GPWL1. The gate of the transistor M6 inputs the pull-down control signal GPWL2 , the first source-drain of the transistor M6 is coupled to the reference potential VGL, and the second source-drain of the transistor M6 is coupled to the second source-drain of the transistor M5 . The gate of the transistor M7 is coupled to the node X, the first source-drain of the transistor M7 is coupled to the reference potential VGL, and the second source-drain of the transistor M7 is coupled to the second source-drain of the transistor M5. The gate of the transistor M8 is coupled to the second source-drain of the transistor M7, the first source-drain of the transistor M8 is coupled to the reference potential VGL, and the second source-drain of the transistor M8 is coupled to the node X. The gate of the transistor M9 is coupled to the second source-drain of the transistor M7, the first source-drain of the transistor M9 is coupled to the reference potential VGL, and the second source-drain of the transistor M9 is coupled to the node Y.
第二下拉单元340耦接预充电单元310和上拉单元320,其接收预充电信号和下拉控制信号GPWL1、GPWL2,且根据预充电信号和下拉控制信号GPWL1、GPWL2来控制是否将扫描信号OUT下拉至参考电位VGL。在第二下拉单元340将扫描信号OUT下拉至参考电位VGL后,第二下拉单元340将扫描信号OUT维持在参考电位VGL。第二下拉单元340包含电晶体M10~M14。电晶体M10~M14可以是非晶硅薄膜电晶体或低温多晶硅薄膜电晶体等,但不限于此。电晶体M10的闸极和第一源汲极输入下拉控制信号GPWL2。电晶体M11的闸极输入下拉控制信号GPWL1,电晶体M11的第一源汲极耦接参考电位VGL,且电晶体M11的第二源汲极耦接电晶体M10的第二源汲极。电晶体M12的闸极耦接节点X,电晶体M12的第一源汲极耦接参考电位VGL,且电晶体M12的第二源汲极耦接电晶体M10的第二源汲极。电晶体M13的闸极耦接电晶体M12的第二源汲极,电晶体M13的第一源汲极耦接参考电位VGL,且电晶体M13的第二源汲极耦接节点X。电晶体M14的闸极耦接电晶体M12的第二源汲极,电晶体M14的第一源汲极耦接参考电位VGL,且电晶体M14的第二源汲极耦接节点Y。The second pull-down unit 340 is coupled to the pre-charge unit 310 and the pull-up unit 320, it receives the pre-charge signal and the pull-down control signals GPWL1, GPWL2, and controls whether to pull down the scan signal OUT according to the pre-charge signal and the pull-down control signals GPWL1, GPWL2 to the reference potential VGL. After the second pull-down unit 340 pulls down the scan signal OUT to the reference potential VGL, the second pull-down unit 340 maintains the scan signal OUT at the reference potential VGL. The second pull-down unit 340 includes transistors M10 - M14 . The transistors M10 - M14 may be amorphous silicon thin film transistors or low temperature polysilicon thin film transistors, etc., but are not limited thereto. A pull-down control signal GPWL2 is input to the gate and the first source-drain of the transistor M10 . The gate of the transistor M11 inputs the pull-down control signal GPWL1 , the first source-drain of the transistor M11 is coupled to the reference potential VGL, and the second source-drain of the transistor M11 is coupled to the second source-drain of the transistor M10 . The gate of the transistor M12 is coupled to the node X, the first source-drain of the transistor M12 is coupled to the reference potential VGL, and the second source-drain of the transistor M12 is coupled to the second source-drain of the transistor M10 . The gate of the transistor M13 is coupled to the second source-drain of the transistor M12 , the first source-drain of the transistor M13 is coupled to the reference potential VGL, and the second source-drain of the transistor M13 is coupled to the node X. The gate of the transistor M14 is coupled to the second source-drain of the transistor M12, the first source-drain of the transistor M14 is coupled to the reference potential VGL, and the second source-drain of the transistor M14 is coupled to the node Y.
请参照图4,图4绘示图2的闸极驱动电路200A的时序图。如图4所示,起始信号STV在时间点t0从低准位升至高准位(即参考电位VGH),接着时钟信号C1~C8依序在时间点t2、t4、…、t16时升为高准位,使得扫描信号OUT(1)~OUT(N)依序对应升为高准位(图4仅绘示扫描信号OUT(1)~OUT(3))。时钟信号C1~C8依序降为低准位(即参考电位VGL)时,使得扫描信号OUT(1)~OUT(8)对应降为低准位。时钟信号C2落后时钟信号C1两个数据写入时间H,时钟信号C3落后时钟信号C2两个数据写入时间H等,依此类推。扫描信号OUT(4)~OUT(N)(图未绘示)同样依照上述说明而依序升为高准位和降为低准位,以分别用于驱动显示面板110中对应的像素行。Please refer to FIG. 4 , which shows a timing diagram of the gate driving circuit 200A in FIG. 2 . As shown in Figure 4, the start signal STV rises from a low level to a high level (reference potential VGH) at time point t0, and then clock signals C1-C8 rise to The high level makes the scan signals OUT(1)˜OUT(N) correspondingly rise to the high level in sequence (FIG. 4 only shows the scan signals OUT(1)˜OUT(3)). When the clock signals C1 - C8 drop to the low level (ie, the reference potential VGL) sequentially, the scan signals OUT( 1 ) - OUT( 8 ) correspondingly drop to the low level. The clock signal C2 lags behind the clock signal C1 by two data writing time H, the clock signal C3 lags behind the clock signal C2 by two data writing time H, and so on. The scan signals OUT( 4 )˜OUT(N) (not shown in the figure) are also sequentially raised to a high level and lowered to a low level according to the above description, so as to respectively drive corresponding pixel rows in the display panel 110 .
对于图2的每个移位寄存器210A(1)~210A(N)、210B(1)~210B(N)而言,电晶体M1在扫描信号OUT(1)~OUT(N)、OUT’(1)~OUT’(N)由参考电位VGL升为参考电位VGH时的两个数据写入时间H前受到输入信号IN1的作用而导通,使得节点X的电位升高至参考电位VGH减去电晶体M1的临界电压Vt(即VGH-Vt)。For each shift register 210A(1)-210A(N) and 210B(1)-210B(N) in FIG. 1)~OUT'(N) is turned on by the input signal IN1 before the two data writing time H when the reference potential VGL rises to the reference potential VGH, so that the potential of node X rises to the reference potential VGH minus The threshold voltage Vt of transistor M1 (ie VGH-Vt).
接着,再经过两个数据写入时间H后,电晶体M3受到时钟信号CN1的作用而导通,使得节点X的电位受到电容Cx的耦合作用而升高至VGH-Vt+Vc,且扫描信号OUT(1)~OUT(N)、OUT’(1)~OUT’(N)由参考电位VGL升为参考电位VGH。在本实施例中,电压差Vc为(VGH-VGL)×[Cgs/(Cpl+Cgs)],其中Cgs为电晶体M3的寄生电容,而Cpl为节点X看到的等效电容。Then, after two data writing time H, the transistor M3 is turned on by the clock signal CN1, so that the potential of the node X is increased to VGH-Vt+Vc by the coupling effect of the capacitor Cx, and the scanning signal OUT(1)-OUT(N), OUT'(1)-OUT'(N) rise from the reference potential VGL to the reference potential VGH. In this embodiment, the voltage difference Vc is (VGH-VGL)×[C gs /(C pl +C gs )], where C gs is the parasitic capacitance of transistor M3, and C pl is the value seen by node X, etc. Effective capacitance.
接着,再经过8个数据写入时间H后,电晶体M3受到时钟信号CN1的作用而关断,使得节点X的电位降低至VGH-Vt,且扫描信号OUT(1)~OUT(N)、OUT’(1)~OUT’(N)由参考电位VGH降为参考电位VGL。Then, after 8 data writing time H, the transistor M3 is turned off by the clock signal CN1, so that the potential of the node X is lowered to VGH-Vt, and the scanning signals OUT(1)-OUT(N), OUT'(1)˜OUT'(N) drop from the reference potential VGH to the reference potential VGL.
最后,再经过两个数据写入时间H后,电晶体M2受到输入信号IN2的作用而关断,且电晶体M4受到时钟信号CN2的作用而导通,使得节点X的电位降为参考电位VGL。Finally, after two data writing times H, the transistor M2 is turned off by the input signal IN2, and the transistor M4 is turned on by the clock signal CN2, so that the potential of the node X drops to the reference potential VGL .
以移位寄存器210A(1)为例,在时间点为t0时,起始信号STV升为参考电位VGH,以导通电晶体M1,使得节点X的电位升至VGH-Vt。在时间点为t2时,时钟信号C1升为参考电位VGH,以导通电晶体M3,使得节点X的电位受到电容Cx的耦合作用而升高至VGH-Vt+Vc,且扫描信号OUT(1)由参考电位VGL升为参考电位VGH。在时间点为t10时,扫描信号OUT(1)降为参考电位VGL,以关断电晶体M3,使得节点X的电位降低至VGH-Vt,且扫描信号OUT(1)由参考电位VGH降为参考电位VGL。在时间点为t12时,扫描信号OUT(2)降为参考电位VGL,以关断电晶体M2,且时钟信号C6升为参考电位VGH,以导通电晶体M4,使得节点X的电位降为参考电位VGL。Taking the shift register 210A(1) as an example, at the time point t0, the start signal STV rises to the reference potential VGH to turn on the transistor M1, so that the potential of the node X rises to VGH-Vt. At the time point t2, the clock signal C1 rises to the reference potential VGH to turn on the transistor M3, so that the potential of the node X is increased to VGH-Vt+Vc by the coupling effect of the capacitor Cx, and the scanning signal OUT(1 ) rises from the reference potential VGL to the reference potential VGH. At the time point t10, the scan signal OUT(1) drops to the reference potential VGL to turn off the transistor M3, so that the potential of the node X drops to VGH-Vt, and the scan signal OUT(1) drops from the reference potential VGH to Reference potential VGL. At time t12, the scan signal OUT(2) drops to the reference potential VGL to turn off the transistor M2, and the clock signal C6 rises to the reference potential VGH to turn on the transistor M4, so that the potential of the node X drops to Reference potential VGL.
在图4所绘示的时序图中,扫描信号OUT(1)~OUT(N)、OUT’(1)~OUT’(N)由参考电位VGL升为参考电位VGH时,节点X的电位升高至VGH-Vt,而非直接升高至VGH-Vt+Vc。直到再经过两个数据写入时间H后,节点X的电位才从VGH-Vt升高至VGH-Vt+Vc。此外,扫描信号OUT(1)~OUT(N)、OUT’(1)~OUT’(N)由参考电位VGH降为参考电位VGL时,节点X的电位降低至VGH-Vt,而非直接降为参考电位VGL。直到再经过两个数据写入时间H后,节点X的电位才从VGH-Vt降为参考电位VGL。图3所绘示的电路图及图4所绘示的时序图的优点在于,可使扫描信号OUT(1)~OUT(N)、OUT’(1)~OUT’(N)的电位完全由电晶体M3的导通和关断状态决定,且可使节点X的电位更为稳定且不易受到其他杂讯的干扰,进而提升显示装置的显示品质,避免在显示的图像中产生例如水波纹或横纹等问题,使显示装置具有高可靠度和高稳定度。In the timing diagram shown in FIG. 4, when the scanning signals OUT(1)~OUT(N), OUT'(1)~OUT'(N) rise from the reference potential VGL to the reference potential VGH, the potential of the node X rises. High to VGH-Vt, not directly to VGH-Vt+Vc. The potential of the node X does not rise from VGH-Vt to VGH-Vt+Vc until two more data writing times H have elapsed. In addition, when the scanning signals OUT(1)~OUT(N), OUT'(1)~OUT'(N) drop from the reference potential VGH to the reference potential VGL, the potential of the node X drops to VGH-Vt instead of directly dropping Is the reference potential VGL. The potential of the node X drops from VGH-Vt to the reference potential VGL until two more data writing time H have elapsed. The advantage of the circuit diagram shown in FIG. 3 and the timing diagram shown in FIG. 4 is that the potentials of the scanning signals OUT(1)~OUT(N), OUT'(1)~OUT'(N) can be completely controlled by the electric potential. The turn-on and turn-off states of crystal M3 are determined, and can make the potential of node X more stable and less susceptible to interference from other noises, thereby improving the display quality of the display device and avoiding water ripples or horizontal lines in the displayed image. Problems such as streaks are eliminated, so that the display device has high reliability and high stability.
虽然本发明已经以实施例公开如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作些许变动与润饰,故本发明的保护范围当视权利要求所界定者为准。Although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention It shall prevail as defined in the claims.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024065A (en) * | 2016-05-18 | 2016-10-12 | 上海天马微电子有限公司 | Shifting register, grid driving circuit, array substrate and display device |
| CN108231032A (en) * | 2018-02-26 | 2018-06-29 | 京东方科技集团股份有限公司 | Shift register, gate driving circuit, display device |
| CN109461411A (en) * | 2017-09-06 | 2019-03-12 | 瀚宇彩晶股份有限公司 | Grid driving circuit and display panel |
| CN109473069A (en) * | 2017-09-07 | 2019-03-15 | 瀚宇彩晶股份有限公司 | Gate drive circuit and display panel |
| CN110379349A (en) * | 2019-07-22 | 2019-10-25 | 深圳市华星光电半导体显示技术有限公司 | Gate driving circuit |
| CN110556069A (en) * | 2018-05-31 | 2019-12-10 | 瀚宇彩晶股份有限公司 | Shift register with surge noise suppression function and driving method thereof |
| CN112349251A (en) * | 2019-08-08 | 2021-02-09 | 瀚宇彩晶股份有限公司 | Gate drive circuit and drive method of display panel |
| TWI726564B (en) * | 2019-12-31 | 2021-05-01 | 財團法人工業技術研究院 | Pixel array with gate driver and matrix sensor array |
| CN112820227A (en) * | 2019-11-18 | 2021-05-18 | 瀚宇彩晶股份有限公司 | Gate drive circuit |
| CN113160732A (en) * | 2020-01-22 | 2021-07-23 | 瀚宇彩晶股份有限公司 | Gate drive circuit |
| CN113643638A (en) * | 2020-04-27 | 2021-11-12 | 瀚宇彩晶股份有限公司 | gate drive circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140253424A1 (en) * | 2013-03-11 | 2014-09-11 | Hannstar Display Corporation | Shift register, bidirectional shift register apparatus, and liquid crystal display panel using the same |
| CN104575409A (en) * | 2013-10-16 | 2015-04-29 | 瀚宇彩晶股份有限公司 | Liquid crystal display and bidirectional shift temporary storage device thereof |
-
2015
- 2015-12-31 CN CN201511027073.0A patent/CN106935168B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140253424A1 (en) * | 2013-03-11 | 2014-09-11 | Hannstar Display Corporation | Shift register, bidirectional shift register apparatus, and liquid crystal display panel using the same |
| CN104050935A (en) * | 2013-03-11 | 2014-09-17 | 瀚宇彩晶股份有限公司 | Shift register, bidirectional shift temporary storage device and liquid crystal display panel using same |
| CN104575409A (en) * | 2013-10-16 | 2015-04-29 | 瀚宇彩晶股份有限公司 | Liquid crystal display and bidirectional shift temporary storage device thereof |
Cited By (19)
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| CN106024065B (en) * | 2016-05-18 | 2019-12-17 | 上海天马微电子有限公司 | Shifting register, grid driving circuit, array substrate and display device |
| CN106024065A (en) * | 2016-05-18 | 2016-10-12 | 上海天马微电子有限公司 | Shifting register, grid driving circuit, array substrate and display device |
| CN109461411A (en) * | 2017-09-06 | 2019-03-12 | 瀚宇彩晶股份有限公司 | Grid driving circuit and display panel |
| US10755679B2 (en) | 2017-09-06 | 2020-08-25 | Hannstar Display Corporation | Gate driving circuit and display panel |
| CN109473069B (en) * | 2017-09-07 | 2021-03-23 | 瀚宇彩晶股份有限公司 | Gate Drive Circuits and Display Panels |
| CN109473069A (en) * | 2017-09-07 | 2019-03-15 | 瀚宇彩晶股份有限公司 | Gate drive circuit and display panel |
| CN108231032A (en) * | 2018-02-26 | 2018-06-29 | 京东方科技集团股份有限公司 | Shift register, gate driving circuit, display device |
| CN110556069A (en) * | 2018-05-31 | 2019-12-10 | 瀚宇彩晶股份有限公司 | Shift register with surge noise suppression function and driving method thereof |
| CN110379349A (en) * | 2019-07-22 | 2019-10-25 | 深圳市华星光电半导体显示技术有限公司 | Gate driving circuit |
| CN112349251A (en) * | 2019-08-08 | 2021-02-09 | 瀚宇彩晶股份有限公司 | Gate drive circuit and drive method of display panel |
| CN112349251B (en) * | 2019-08-08 | 2022-03-29 | 瀚宇彩晶股份有限公司 | Gate drive circuit and drive method of display panel |
| CN112820227A (en) * | 2019-11-18 | 2021-05-18 | 瀚宇彩晶股份有限公司 | Gate drive circuit |
| CN112820227B (en) * | 2019-11-18 | 2024-05-07 | 瀚宇彩晶股份有限公司 | Gate drive circuit |
| TWI726564B (en) * | 2019-12-31 | 2021-05-01 | 財團法人工業技術研究院 | Pixel array with gate driver and matrix sensor array |
| US11100880B2 (en) | 2019-12-31 | 2021-08-24 | Industrial Technology Research Institute | Pixel array with gate driver and matrix sensor array |
| CN113160732A (en) * | 2020-01-22 | 2021-07-23 | 瀚宇彩晶股份有限公司 | Gate drive circuit |
| CN113160732B (en) * | 2020-01-22 | 2024-04-30 | 瀚宇彩晶股份有限公司 | Gate drive circuit |
| CN113643638A (en) * | 2020-04-27 | 2021-11-12 | 瀚宇彩晶股份有限公司 | gate drive circuit |
| CN113643638B (en) * | 2020-04-27 | 2024-04-30 | 瀚宇彩晶股份有限公司 | Gate driving circuit |
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