CN106904567B - A kind of semiconductor devices and preparation method thereof, electronic device - Google Patents
A kind of semiconductor devices and preparation method thereof, electronic device Download PDFInfo
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- CN106904567B CN106904567B CN201510976484.8A CN201510976484A CN106904567B CN 106904567 B CN106904567 B CN 106904567B CN 201510976484 A CN201510976484 A CN 201510976484A CN 106904567 B CN106904567 B CN 106904567B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims abstract description 54
- 239000002904 solvent Substances 0.000 claims abstract description 20
- 238000005507 spraying Methods 0.000 claims abstract description 17
- 239000002344 surface layer Substances 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 23
- 230000007547 defect Effects 0.000 abstract description 21
- 239000003292 glue Substances 0.000 abstract description 20
- 230000008569 process Effects 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 7
- 230000008859 change Effects 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 4
- 238000000576 coating method Methods 0.000 abstract description 4
- 238000010790 dilution Methods 0.000 abstract 1
- 239000012895 dilution Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 10
- 239000007921 spray Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000004026 adhesive bonding Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00388—Etch mask forming
- B81C1/00428—Etch mask forming processes not provided for in groups B81C1/00396 - B81C1/0042
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention relates to a kind of semiconductor devices and preparation method thereof, electronic devices.The method includes the steps S1：Wafer is provided, photoresist is sprayed on the wafer, the thickness of the photoresist is less than target thickness；Step S2：Spraying can dissolve the solvent of the photoresist on the photoresist, by the photoresist dissolving on surface layer, and execute baking procedure, the solvent and make the photoresist smooth surface to volatilize；Step S3：The thickness of repeating said steps S2 to the photoresist is target thickness.The technique that the method for the invention takes full advantage of multiple glue spraying dilution baking, form high quality photoresist coating, it improves in deep groove structure, the problems such as bottom photoresist thickness is difficult to improve, photoresist layer cavity, grain defect is more, substantially increase litho pattern quality, do not change other technological processes, do not increase light shield, has many advantages, such as that at low cost, implementation is strong.
Description
Technical field
The present invention relates to semiconductor applications, in particular it relates to a kind of semiconductor devices and preparation method thereof, electronics
Device.
Background technology
With the continuous development of semiconductor technology, sensor (motion sensor) class product in the market, intelligent hand
Machine, integrated CMOS and MEMS (MEMS) device have become most mainstream, state-of-the-art technology, and more with technology
Newly, the developing direction of this kind of transmission sensors product is the smaller size of scale, the electric property of high quality and lower loss.
Wherein, microelectromechanical systems (MEMS) has in volume, power consumption, weight and in price fairly obvious excellent
Gesture, has developed a variety of different sensors so far, for example, pressure sensor, acceleration transducer, inertial sensor and
Other sensors.
It, be to the structure gluing in the deep trouth in MEMS device, too because of step height difference in MEMS device preparation process
Greatly, rotary coating cannot solve, and be solved frequently with spraying method.
For deeper groove, multi-injection gluing is needed, bottom glue thickness requirement could be met.However, by constructional depth and
The limitation of gluing principle is sprayed, the local glue thickness in structural base corner is always partially thin, even will appear photoresist hole defect sometimes,
As shown in Figs. 1-2.This hole defect can be etched into understructure in subsequent etching processes, to influence device
Can, even result in device damage.
Therefore it needs to be improved further the preparation method of current MEMS device, to eliminate above-mentioned various drawbacks.
Invention content
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection domain for attempting to determine technical solution claimed more.
The present invention is in order to overcome the problems, such as that presently, there are provide
A kind of preparation method of semiconductor devices, including：
Step S1：Wafer is provided, photoresist is sprayed on the wafer, the thickness of the photoresist is less than target thickness；
Step S2：Spraying can dissolve the solvent of the photoresist on the photoresist, by the photoresist on surface layer
Dissolving, and executes baking procedure, the solvent and makes the photoresist smooth surface to volatilize；
Step S3：The thickness of repeating said steps S2 to the photoresist is target thickness.
Optionally, the method further includes：
Step S4：Photoetching is carried out to the photoresist of target thickness, to form target pattern in the photoresist.
Optionally, the method further includes：
Step S5：Using the photoresist as wafer described in mask etch, the target pattern is transferred to the wafer
In.
Optionally, in the step S4, the photoresist is exposed and is developed, to be formed in the photoresist
The target pattern.
Optionally, the photoresist is sprayed in the deep trouth of the wafer in the step S1, to ultimately form target
The photoresist of thickness.
Optionally, the photoresist is sprayed on the terraced structure of the wafer in the step S1, with most end form
At the photoresist of target thickness.
The present invention also provides a kind of semiconductor devices being prepared such as the above method.
The present invention also provides a kind of electronic devices, including above-mentioned semiconductor devices.
In order to solve the problems in the existing technology, the invention discloses glue spraying defects in a kind of improvement MEMS device
Method.First, photoresist is sprayed on wafer, photoresist thickness should be less than or be equal to subsequent etching processes requirement.Then, in light
The solvent of one layer of dissolvable photoresist of photoresist surface spraying dissolves the photoresist on surface layer.To its heated baking, solvent is made to wave
Hair, and photoresist surface can also become smoother.Later, glue spraying-spray solvent-baking procedure is repeated, until photoresist thickness is full
Foot etching requires.Smooth and glue light without cavity or grain defect (defect) has thus been uniformly sprayed in deep groove structure
Carve layer.Thereafter, photoresist is exposed, developed, form it into figure.Finally, photoetching offset plate figure etching is transmitted to wafer
On.
The method of the invention takes full advantage of the technique of multiple glue spraying-dilution-baking, forms the painting of high-quality light photoresist
The problems such as layer, improves in deep groove structure, and bottom photoresist thickness is difficult to improve, photoresist layer cavity, grain defect is more, significantly
Litho pattern quality is improved, does not change other technological processes, does not increase light shield, has many advantages, such as that at low cost, implementation is strong.
Description of the drawings
The following drawings of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 is the SEM schematic diagrames of MEMS device described in the prior art；
Fig. 2 is the SEM schematic diagrames of MEMS device described in the prior art；
Fig. 3 is the preparation technology flow chart of MEMS device described in the embodiment of the invention；
Fig. 4 is the SEM schematic diagrames for the MEMS device that the method for the invention is prepared.
Specific implementation mode
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the areas Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to as " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then element or layer between two parties is not present.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relationship term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that other than orientation shown in figure, spatial relationship term intention further includes making
With the different orientation with the device in operation.For example, if the device in attached drawing is overturn, then, it is described as " under other elements
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as the limitation of the present invention.Make herein
Used time, " one " of singulative, "one" and " described/should " be also intended to include plural form, unless context is expressly noted that separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related Listed Items and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical scheme of the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this
Invention can also have other embodiment.
Embodiment one
In order to solve the problems in the existing technology, the present invention provides a kind of preparation method of MEMS device, below
The method is described further in conjunction with attached drawing 3-4, wherein Fig. 3 is MEMS described in the embodiment of the invention
The preparation technology flow chart of device；Fig. 4 is the SEM schematic diagrames for the MEMS device that the method for the invention is prepared.
First, step 101 is executed, wafer is provided, photoresist is sprayed on the wafer, the thickness of the photoresist is less than
Target thickness.
Specifically, wafer is provided in this step, cmos device and various MEMS members can be formed in the wafer
Part, wherein the MEMS element refers to necessary various components in the MMES sensors, it is described by taking motion sensor as an example
Various terraced structures, various grooves, groove structure etc. can be formed in wafer.
Wherein, due in the MEMS device deep groove structure or step height difference it is too big, rotary coating (spin
Coating it) cannot effectively coat on deep groove structure or step structure, be solved frequently with the mode of spraying (spray).
Wherein, for deeper groove, multi-injection gluing is needed, bottom glue thickness requirement could be met.However, by structure depth
Degree and injection gluing principle limitation, the local glue thickness in structural base corner is always partially thin, and is or even will appear photoresist hole
Defect.
Therefore in this application the photoresist is formed by the method repeatedly sprayed, in this step the photoresist
Thickness is less than target thickness, and specific thickness can spray number according to target thickness and the amount of solvent removal is selected.
The photoresist is sprayed in the deep trouth of the wafer in this step, or on the terraced structure of the wafer
The photoresist is sprayed, to ultimately form the photoresist of target thickness, but the method is not limited merely to the spy
The device of different structure.
Step 102 is executed, one layer of solvent that can dissolve photoresist is sprayed on the photoresist, by the light on surface layer
Photoresist dissolves.
Present inventor to photoresist in the prior art there are holes the defects of the reason of carried out the study found that producing
The principal element of raw defect (defect):
1, area increases, and glue spraying amount is constant.
2, the acceptable glue direction at hole bottom only has the 1/4 of surface.
3, many factors superposition causes hole bottom turning (corner) to easy to produce hole (avoid) or photoresist particle (PR
particle).This will cause defect in etching process.
In order to solve this problem, one layer of solvent that can dissolve photoresist is sprayed on the photoresist in this step, with
The part photoresist on photoresist surface layer is dissolved, the photoresist not only becomes more smooth, flat during dissolving,
Increase glue spraying area, but also the hole (avoid) formed in photoresist or photoresist particle (PR can be removed
particle)。
The hole (avoid) formed in photoresist or photoresist particle (PR particle) are eliminated in this step,
Technique can be preferably etched in follow-up step.
Step 103 is executed, baking procedure is executed, the photoresist smooth surface is made with the solvent that volatilizees.
Baking procedure is executed in this step, and the solvent not reacted can be not only removed in the baking procedure,
The photoresist can also be cured, so that the surface of the remaining photoresist is more flat and smooth.
Optionally, the temperature of the baking is 150-180 DEG C, and the baking time is 1-5min, but be not limited to that
The numberical range.
Execute step 104, repeating said steps 102-103 to the thickness of the photoresist to target thickness.
Glue spraying-spray solvent-baking procedure is repeated in this step, is required until photoresist thickness meets etching.Pass through institute
The method of stating can uniformly spray smooth and glue lithography layer without cavity or grain defect in deep groove structure or step structure.
Step 105 is executed, photoetching is carried out to the photoresist of target thickness, to form target figure in the photoresist
Case.
The photoresist is exposed and is developed in this step, to form the target figure in the photoresist
Case.
The wherein described exposure imaging is referred to various methods commonly used in the prior art, it is not limited to and it is a certain,
This is repeated no more.
Step 106 is executed, using the photoresist as wafer described in mask etch, the target pattern is transferred to described
Wafer.
The engraving method can select dry etching or wet etching in this step, select C-F in the present invention
Etchant etches the wafer, and the C-F etchants are CF4、CHF3、C4F8And C5F8In it is one or more.In the implementation
In mode, the dry etching can select CF4、CHF3, in addition add N2、CO2In it is a kind of as etching atmosphere, wherein gas
Body flow is CF410-200sccm, CHF310-200sccm, N2Or CO2Or O210-400sccm, the etching pressure are 30-
150mTorr, etching period 5-120s.
So far, the introduction of the correlation step of the MEMS device preparation of the embodiment of the present invention is completed.After the above step,
Can also include other correlation steps, details are not described herein again.Also, in addition to the foregoing steps, the preparation method of the present embodiment
Can also include other steps among above-mentioned each step or between different steps, these steps can pass through existing skill
Various techniques in art realize that details are not described herein again.
In order to solve the problems in the existing technology, the invention discloses glue spraying defects in a kind of improvement MEMS device
Method.First, photoresist is sprayed on wafer, photoresist thickness should be less than or be equal to subsequent etching processes requirement.Then, in light
The solvent of one layer of dissolvable photoresist of photoresist surface spraying dissolves the photoresist on surface layer.To its heated baking, solvent is made to wave
Hair, and photoresist surface can also become smoother.Later, glue spraying-spray solvent-baking procedure is repeated, until photoresist thickness is full
Foot etching requires.Smooth and glue light without cavity or grain defect (defect) has thus been uniformly sprayed in deep groove structure
Carve layer.Thereafter, photoresist is exposed, developed, form it into figure.Finally, photoetching offset plate figure etching is transmitted to wafer
On.
The method of the invention takes full advantage of the technique of multiple glue spraying-dilution-baking, forms the painting of high-quality light photoresist
The problems such as layer, improves in deep groove structure, and bottom photoresist thickness is difficult to improve, photoresist layer cavity, grain defect is more, significantly
Litho pattern quality is improved, does not change other technological processes, does not increase light shield, has many advantages, such as that at low cost, implementation is strong.
Fig. 3 is the preparation technology flow chart of MEMS device described in the embodiment of the invention, is specifically included following
Step：
Step S1：Wafer is provided, photoresist is sprayed on the wafer, the thickness of the photoresist is less than target thickness；
Step S2：Spraying can dissolve the solvent of the photoresist on the photoresist, by the photoresist on surface layer
Dissolving, and executes baking procedure, the solvent and makes the photoresist smooth surface to volatilize；
Step S3：The thickness of repeating said steps S2 to the photoresist is target thickness.
Embodiment two
The present invention also provides a kind of MEMS device, the MEMS device is prepared by the method in embodiment 1
It arrives, the device includes：Wafer；The mask layer of photoresist.
Wherein, the forming method of the photoresist mask includes：Photoresist is sprayed on wafer, photoresist thickness should be less than
Or equal to subsequent etching processes requirement.Then, in the solvent of one layer of dissolvable photoresist of photoresist surface spraying, by the light on surface layer
Photoresist dissolves.To its heated baking, solvent is made to volatilize, and photoresist surface can also become smoother.Later, glue spraying-spray is repeated
Solvent-baking procedure is required until photoresist thickness meets etching.It is uniformly sprayed in deep groove structure by the method
Smooth and glue lithography layer without cavity or grain defect (defect).Thereafter, photoresist is exposed, developed, formed it into
Figure.Finally, photoetching offset plate figure etching is transmitted on wafer.
High quality photoresist coating is formd in the device that the method for the invention is prepared, and improves deep groove structure
In, bottom photoresist thickness is difficult to improve, photoresist layer cavity, the defects of grain defect is more.Litho pattern quality significantly, does not change
Become other technological processes, do not increase light shield, has many advantages, such as that at low cost, implementation is strong.
Embodiment three
The present invention also provides a kind of electronic devices, including the MEMS device described in embodiment two.Wherein, semiconductor devices
The MEMS device that preparation method for the MEMS device described in embodiment two, or according to embodiment one obtains.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment, or
Any intermediate products for including the MEMS device.The electronic device of the embodiment of the present invention, due to the use of above-mentioned MEMS devices
Part, thus there is better performance.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, and be not intended to limit the invention within the scope of described embodiment.In addition people in the art
It is understood that the invention is not limited in above-described embodiment, introduction according to the present invention can also be made more kinds of member
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (6)
1. a kind of preparation method of semiconductor devices, including：
Step S1：Wafer is provided, photoresist is sprayed on the wafer, the thickness of the photoresist is less than target thickness；
Step S2：Spraying can dissolve the solvent of the photoresist on the photoresist, and the photoresist on surface layer is dissolved,
And baking procedure is executed, the solvent and make the photoresist smooth surface to volatilize；
Step S3：The spraying photoresist, spraying solvent and baking procedure are repeated, is carved until the thickness of the photoresist meets
Erosion requires.
2. according to the method described in claim 1, it is characterized in that, the method further includes：
Step S4：Photoetching is carried out to the photoresist of target thickness, to form target pattern in the photoresist.
3. according to the method described in claim 2, it is characterized in that, the method further includes：
Step S5：Using the photoresist as wafer described in mask etch, the target pattern is transferred in the wafer.
4. according to the method described in claim 2, it is characterized in that, in the step S4, the photoresist is exposed
And development, to form the target pattern in the photoresist.
5. according to the method described in claim 1, it is characterized in that, being sprayed in the deep trouth of the wafer in the step S1
The photoresist, to ultimately form the photoresist of target thickness.
6. according to the method described in claim 1, it is characterized in that, in the step S1 in the terraced structure of the wafer
The upper spraying photoresist, to ultimately form the photoresist of target thickness.
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| CN201510976484.8A CN106904567B (en) | 2015-12-23 | 2015-12-23 | A kind of semiconductor devices and preparation method thereof, electronic device |
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| CN201510976484.8A CN106904567B (en) | 2015-12-23 | 2015-12-23 | A kind of semiconductor devices and preparation method thereof, electronic device |
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| CN106904567A CN106904567A (en) | 2017-06-30 |
| CN106904567B true CN106904567B (en) | 2018-09-21 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109062010A (en) * | 2018-09-12 | 2018-12-21 | 上海华力集成电路制造有限公司 | Improve the method for photoresist surface roughness |
| CN111176074A (en) * | 2018-11-13 | 2020-05-19 | 北京自动化控制设备研究所 | Atomization glue spraying method for three-dimensional hollow structure |
| CN116540438B (en) * | 2023-04-25 | 2023-10-27 | 苏州润博希电子科技有限公司 | LCD display screen processing method |
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| CN1717778A (en) * | 2003-03-31 | 2006-01-04 | 东京毅力科创株式会社 | Method and apparatus for multilayer photoresist dry development |
| CN102001618A (en) * | 2010-10-27 | 2011-04-06 | 天津海鸥表业集团有限公司 | Masking method for deep-etching multi-layer silicon structure by dry method |
| CN102213919A (en) * | 2010-04-08 | 2011-10-12 | 中国科学院上海微系统与信息技术研究所 | A kind of coating method of suspension structure photoresist |
| CN102543682A (en) * | 2012-02-17 | 2012-07-04 | 上海先进半导体制造股份有限公司 | Method for forming multistage deep step |
| CN103855075A (en) * | 2012-12-04 | 2014-06-11 | 中芯国际集成电路制造(上海)有限公司 | Method for collecting etching conditions |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7851244B2 (en) * | 2008-02-11 | 2010-12-14 | Honeywell International Inc. | Methods for forming metal layers for a MEMS device integrated circuit |
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2015
- 2015-12-23 CN CN201510976484.8A patent/CN106904567B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1717778A (en) * | 2003-03-31 | 2006-01-04 | 东京毅力科创株式会社 | Method and apparatus for multilayer photoresist dry development |
| CN102213919A (en) * | 2010-04-08 | 2011-10-12 | 中国科学院上海微系统与信息技术研究所 | A kind of coating method of suspension structure photoresist |
| CN102001618A (en) * | 2010-10-27 | 2011-04-06 | 天津海鸥表业集团有限公司 | Masking method for deep-etching multi-layer silicon structure by dry method |
| CN102543682A (en) * | 2012-02-17 | 2012-07-04 | 上海先进半导体制造股份有限公司 | Method for forming multistage deep step |
| CN103855075A (en) * | 2012-12-04 | 2014-06-11 | 中芯国际集成电路制造(上海)有限公司 | Method for collecting etching conditions |
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