CN1068920A - A kind of attenuation isolating system using diode modulation - Google Patents
A kind of attenuation isolating system using diode modulation Download PDFInfo
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- CN1068920A CN1068920A CN 92100741 CN92100741A CN1068920A CN 1068920 A CN1068920 A CN 1068920A CN 92100741 CN92100741 CN 92100741 CN 92100741 A CN92100741 A CN 92100741A CN 1068920 A CN1068920 A CN 1068920A
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Abstract
A kind of attenuation isolating system using diode modulation, it comprises: high-frequency agitation source [1], amplify the modulating driver [5] of modulation signal, the directional coupler [4] of output modulated signals, and one by isolator [2], chopped-off head modulating part [3 '], capacitance, the final stage modulating part [3 "], low pass filter [9; 9 ', the diode modulator system that 9 "] are formed.It utilizes chopped-off head modulating part [3 '] and final stage modulating part, and [the diode parallel connection in 3 "] has overcome the not high shortcoming of modulation depth index that prior art exists.The modulation depth index of this system is＞80dB, the switching response time＜below the 30ns, Insertion Loss＜1.5-2.5dB.Can in microwave high-frequency signals generator, antenna electricity transmitter, radar, use.
Description
This relating to the attenuation isolating technology of high-frequency signal, especially a kind ofly is used for the modulated attenuation of attenuation isolating system using diode modulation microwave high-frequency signals generator, radio transmitter, thunder and lightning transmitter carry out to(for) high-frequency signal.
In the prior art, the occasion carrying out modulated attenuation to high-frequency signal has generally all adopted the diode modulation technique, typically the microwave high-frequency signals generator of producing as Shanghai radio 26 factories.This signal generator is by a microwave high-frequency signals oscillation source, an isolator, a diode modulator, a modulating driver that amplifies modulating pulse, a low pass filter, the directional coupler of a modulated high-frequency signal of output is formed attenuation isolating system using diode modulation (referring to Fig. 1).Owing to adopted diode modulator, this signal generator have modulating speed fast, draw advantages such as little, that circuit structure is simple for carrier source, but weak point is that this technical indicator of modulation depth of this signal generator is not high, can not fully satisfy actual needs.
For modulator, general requirement is that its decay should be as far as possible little when the modulator conducting, and its decay should be big as far as possible when modulator disconnects, and so just can obtain comparatively desirable modulation depth index.But the restriction of technology and technical merit during owing to manufacturing, the impedance that constitutes the diode of diode modulator can not be zero when conducting, also can not ad infinitum increase when ending.Improve the modulation depth index of diode modulator, have only circuit to improve existing diode modulator.
A known U.S. monograph 4140982(classification number H038 5/18), a technical scheme that addresses the above problem was once disclosed.This technical scheme has adopted two diodes and an inductance to form diode modulator, after interconnecting, the negative terminal of described two diodes connects vision signal (modulation signal), the anode of two diodes connects high-frequency signal and output respectively, and described inductance is connected between the anode of two diodes.For high-frequency signal, two diodes in this diode modulator are oppositely to contact.When needs are decayed to high-frequency signal, utilize the impedance of two diodes oppositely to contact, obtaining bigger attenuation, when not needing high-frequency signal decayed, utilize inductance that two diodes are all conducted electricity, allow high-frequency signal pass through diode modulator.This technical scheme can be brought up to the modulation depth index＞the 30db level, and obtains the frequency band of broad, but owing to adopt two diode reverse polyphones, has increased the Insertion Loss of diode modulator, and the modulation depth index of this technical scheme is still undesirable simultaneously.
The present invention's purpose, be at the not high shortcoming of modulation depth index in the aforementioned techniques, existing attenuation isolating system using diode modulation is added an improvement, provide a kind of modulation depth index higher, switching time is shorter, simple and the dependable performance of circuit can be used in more occasion, can satisfy the attenuation isolating system using diode modulation of actual needs.
Realize the technical scheme that purpose of the present invention provides:
A kind of attenuation isolating system using diode modulation, this system comprises, directional coupler [4], an isolator [2] that is connected with described high-frequency agitation source [1] of the modulating driver [5] of a high-frequency agitation source [1], an amplification modulation signal, an output modulated signals comprise inductance L 4 and feedthrough capacitor C
9Low pass filter [9.9 ' .9 "], described low pass filter [9.9 ' 9 "] link to each other with described modulating driver [5] respectively, it is characterized in that described attenuation isolating system using diode modulation also comprises:
A chopped-off head modulating part [3 '], it is by capacitor C
4And two diode connected in parallel D
1Form capacitor C
4One end links to each other capacitor C with described isolator [2]
4The other end and diode D
1Anode and described low continuous respectively towards filter [9], diode D
1Negativing ending grounding;
One not the level modulating part [3 "], it is by capacitor C
7And two diode connected in parallel D
2Form capacitor C
7One end links to each other capacitor C with described directional coupler [4]
7The other end and described diode D
2Anode links to each other, diode D
2Negativing ending grounding;
A capacitance of being made up of the capacitor C of two series connection, this capacitance are used to isolate described chopped-off head modulating part [3 '] and final stage modulating part [direct current between 3 "], the diode D in this capacitance one end and the described chopped-off head modulating part [3 ']
1Anode links to each other, the diode D in the other end and described low pass filter [9 "] and the described level energy modulating part [3 "]
3Anode links to each other respectively.
In this scheme, with chopped-off head modulating part [3 '], capacitance C, [the diode modulator system that two low pass filters [9 ' .9] are formed has not replaced diode modulator of the prior art to the level modulating part for 3 "], isolator [2].The essence of this diode modulator system is to have utilized diode connected in parallel D in the chopped-off head modulating part
1Level modulating part [diode connected in parallel D in 3 "] not
2In parallel again.This connecting mode makes the impedance of described diode modulator system when opening be significantly smaller than the impedance of diode modulator of the prior art.As long as the parameter of the described diode of choose reasonable then can make the described attenuation isolating system using diode modulation of this scheme obtain modulation depth index preferably.
Further scheme is between the line and ground between two capacitor C of the straight electric capacity of isolation in described technical scheme, increases by a diode D who is composed in parallel by two diodes again
3This diode D
3Link to each other its negativing ending grounding between anode and described two capacitor C.This diode D
3Anode passes through one equally by inductance L 4 feedthrough capacitor C
9The low pass filter of forming [9 '] links to each other with described modulating driver [5].This two pipe D
3[3 "] link, and make the diode modulator system in this scheme become a diode modulator system with three grades of parallel modulations to utilize capacitance and described chopped-off head modulating part [3 '] and final stage modulating part.This diode modulator system is littler than the impedance of aforesaid diode modulator system when opening.Adopt the diode modulated attenuation separator system of this diode modulator system can obtain even more ideal modulation depth index.
Can also between the line and ground between two capacitor C of the capacitance of the technical scheme that is provided, insert a circulator/isolator [6].This annular block isolating device [6] can make described chopped-off head modulating part [3 '] and not the level modulating part [impedance between 3 "] obtains rational Match, improves other technical indicator of described attenuation isolating system using diode modulation.
Facts have proved, the diode modulated attenuation separator system that adopts the present invention to make, its modulation depth index can reach＞80dB, the switching response time＜below the 30ns, peg graft and decrease less than 1.5-2.5dB.Its circuit is simple, dependable performance.Only need dispose different high-frequency agitation source as required, by can in microwave high-frequency signals generator, radio transmitter, radar transmitter, using the purpose that reaches the present invention.
The present invention has following accompanying drawing:
Fig. 1 is existing attenuation isolating system using diode modulation theory diagram.
Fig. 2 is a theory diagram of the present invention.
Fig. 3 is an electrical schematic diagram of the present invention, also is an instantiation.
Fig. 4 is the electrical schematic diagram of another instantiation of the present invention.
Fig. 5 is the 3rd instantiation electrical schematic diagram of the present invention.
Fig. 1 is described as follows:
The 1-high-frequency agitation source.The 2-isolator.The 3-diode modulator.The 4-directional coupler.The 5-modulating driver.The 9-low pass filter.
Fig. 2 is described as follows (referring to Fig. 3):
Figure medium-high frequency oscillation source [1], isolator [2], directional coupler [4], modulating driver [5], [9.9 "] are prior art to low pass filter.3 '-the chopped-off head modulating part.3 " final stage modulating part, the C-capacitance, it is made up of two electric capacity.Among the figure, by isolator [2], chopped-off head modulating part [3 '], capacitance C, [9.9 "] are formed the diode modulator system to two low pass filters.
Fig. 3 is described as follows (referring to Fig. 2):
High-frequency agitation source [1] is by triode Q
1, inductance L 1, capacitor C
2, the YIG magnetic tuning device 30 that shakes, microstrip transmission line 1 ' 2 ', capacitor C
1, capacitor C
8, resistance R
1, resistance R
2, wide-band amplifier 40 is formed.
Isolator [2] is by resistance R
3, resistance R
5, resistance R
4The T type attenuator that constitutes.
In the modulating driver [5], by diode Q
2, resistance R
7, resistance R
8, resistance R
9Form emitter follower.By triode Q
3, triode Q
4, resistance R
11Form emitter-base bandgap grading coupling difference phase inverter.Resistance R
10And capacitor C
10Form accelerating circuit.By diode D
6And diode D
7Form level compensation circuit.By triode Q
5And triode Q
6, resistance R
12, inductance L 5 forms complementary emitter base diode circuit.Resistance R
13, capacitor C
14Be accelerating circuit.C
11, C
12, C
13Be electric capacity.
[9.9 "] are respectively by inductance L 4 and feedthrough capacitor C for low pass filter
9Constitute.
Chopped-off head modulating part [3 '] is by capacitor C
4, two diode connected in parallel D
1Constitute; [3 "] are by capacitor C for the final stage modulating part
7, two diode connected in parallel D
2Constitute; C is a capacitance, and it is made up of two capacitances in series.
Directional coupler [4] is by little band assembly 7 and diode D
5, resistance R
6Form.
The present embodiment course of work: high-frequency agitation source [1] produces high-frequency signal and delivers to the diode modulator system through isolator [2], meanwhile, modulation signal enters modulating driver [5] by A end [9.9 "] adds to the diode D in the diode modulator system synchronously by two low pass filters
1And diode D
2Anode is modulated high-frequency signal, delivers to directional coupler [4] through the signal of modulated attenuation, the signal of a modulated attenuation of this directional coupler main road output, and another road is through diode D
5Deliver to indicating circuit or fixed amplitude circuit after the detection.
This routine frequency of oscillation can be regulated continuously, and as long as changes the condition of resonance and the triode Q of high-frequency agitation source [1]
1, its frequency range can be accomplished from L-band to the K wave band.
Fig. 4 is described as follows:
High-frequency agitation source [1], modulating driver [5], directional coupler [4], chopped-off head modulating part [3 '], [3 "] are identical with example among Fig. 3 for the final stage modulating part.
Among the figure, isolator [2] is by circulator/isolator 6 and resistance R thereof
4Constitute.Between the line and ground between two electric capacity of capacitance C, have one by circulator/isolator 6 and resistance R thereof
4The isolator that constitutes, it is used to improve chopped-off head modulating part [3 '] and the final stage modulating part [coupling between 3 "].
The implementation process is similar among present embodiment and Fig. 3.
Fig. 5 is described as follows:
Among the figure, modulating driver [5], isolator [2], chopped-off head modulating part [3 '] and final stage modulating part [3 "] all with Fig. 4 in example identical.
Among the figure, between the line and ground between two electric capacity of capacitance C, be connected into by two diode diode connected in parallel D
3, this diode D
3Anode passes through one by inductance L 4 and feedthrough capacitor C
9Hanging down of forming links to each other with modulating driver [5] towards filter [9 '].
In the high-frequency agitation source among the figure [1], by triode Q
1, inductance L 1 ', inductance L 2 ', inductance L 3 ', resistance R
1', resistance R
2', resistance R
3, and capacitor C
1, variable capacitance C
2, coaxial resonant inductance 10, capacitor C
9 ', resistance R
4Constitute the coaxial tunning oscillator.
This routine frequency range is below S-band, as long as change coaxial resonant inductance with regard to the scalable output frequency, its modulation depth index is higher.The course of work and precedent are similar.
Claims (3)
1, a kind of diode attenuation isolating system, this system comprises, a high-frequency agitation source [1], a modulating driver [5] that amplifies modulation signal, the directional coupler [4] of signal is made in an output, an isolator [2] that links to each other with described high-frequency agitation source [1] includes inductance L 4 and feedthrough capacitor C
9Low pass filter [9,9 ', 9 "], described low pass filter [9,9 ', 9 "] link to each other with described modulating driver [5] respectively, it is characterized in that described attenuation isolating system using diode modulation also comprises:
A chopped-off head modulating part [3 '], it is by capacitor C
4And two diode connected in parallel D
1Form capacitor C
4One end links to each other capacitor C with described isolator [2]
4The other end and diode D
1Anode and described low pass filter [9] link to each other respectively, diode D
1Negativing ending grounding;
[3 "], it is by C for a last utmost point modulating part
7And two diode connected in parallel D
2Form capacitor C
7One end links to each other capacitor C with described directional coupler [4]
7The other end and described diode D
2Anode links to each other, diode D
2Negativing ending grounding;
A capacitance of being made up of the capacitor C of two series connection, this capacitance are used to isolate described chopped-off head modulating part [3 '] and final stage modulating part [direct current between 3 "], the diode D in this capacitance one end and the described chopped-off head modulating part [3 ']
1Anode links to each other, the diode D in the other end and described low pass filter [9 "] and the described final stage modulating part [3 "]
3Anode links to each other respectively.
2, by the described attenuation isolating system using diode modulation of claim 1, it is characterized in that between the line and ground between two series capacitance C of described capacitance, also comprise a diode D who forms by two diode connected in parallel
2, this diode D
2Anode links to each other diode D respectively with line and described low pass filter [9 '] between described two series capacitance C
2Negativing ending grounding.
3,, it is characterized in that also comprising a circulator/isolator 6 between the line and ground between two series capacitance C of described composition capacitance by the described two pipe modulated attenuation shielding systems of claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92100741 CN1025264C (en) | 1992-02-03 | 1992-02-03 | Diode modulation attenuation isolation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92100741 CN1025264C (en) | 1992-02-03 | 1992-02-03 | Diode modulation attenuation isolation system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1068920A true CN1068920A (en) | 1993-02-10 |
| CN1025264C CN1025264C (en) | 1994-06-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92100741 Expired - Fee Related CN1025264C (en) | 1992-02-03 | 1992-02-03 | Diode modulation attenuation isolation system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1694361B (en) * | 2005-05-23 | 2010-04-14 | 电子科技大学 | A method for generating ultra-wideband multi-frequency point microwave signals |
-
1992
- 1992-02-03 CN CN 92100741 patent/CN1025264C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1694361B (en) * | 2005-05-23 | 2010-04-14 | 电子科技大学 | A method for generating ultra-wideband multi-frequency point microwave signals |
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| Publication number | Publication date |
|---|---|
| CN1025264C (en) | 1994-06-29 |
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