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CN106873168B - A lens for beam shaping of semiconductor laser - Google Patents

A lens for beam shaping of semiconductor laser Download PDF

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Publication number
CN106873168B
CN106873168B CN201710181008.6A CN201710181008A CN106873168B CN 106873168 B CN106873168 B CN 106873168B CN 201710181008 A CN201710181008 A CN 201710181008A CN 106873168 B CN106873168 B CN 106873168B
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China
Prior art keywords
lens
axis direction
fast axis
light
spherical
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CN201710181008.6A
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Chinese (zh)
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CN106873168A (en
Inventor
王旭葆
李姣
张二军
米庆改
孙静
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Beijing University of Technology
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Beijing University of Technology
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)

Abstract

A kind of lens applied to semiconductor laser device beam shaping, are related to semiconductor laser device beam shaping field.The position put is needed to determine by lens according to the caliber size of lens, front lens i.e. first lens material of the material 1 that selected refractive index is as cemented doublet, the material 2 that refractive index is is used as rear lens i.e. second lens material, use the method gluing of double gluings for one piece of thick lens between two lens of front and back, three faces of this cemented doublet are followed successively by aspherical, spherical surface, spherical surface.Lens are cemented doublet, first face is the aspherical cylinder of fast axis direction, aspherical equation is obtained by the geometric optics law of refraction, collimate fast axis direction light beam, second face is spherical surface, while collimating to slow-axis direction Gaussian beam, the light of fast axis direction is focused, third face is spherical surface cylinder, and is determined at a distance from second face by fast axle target spot size, and the nearly square focus spot of final emergent light spot target sizes is made.

Description

A kind of lens applied to semiconductor laser device beam shaping
Technical field
The present invention designs optical design arts and field of semiconductor lasers more particularly to semiconductor laser device beam shaping Field.
Background technique
Due to the characteristics of luminescence of semiconductor, the semiconductor laser fast and slow axis angle of divergence gap of vertical edge emitting is larger, this So that the beam quality of semiconductor laser is poor, certain difficulty is caused to beam shaping, more demanding to beam quality Application field, semiconductor laser are unable to reach requirement, limit the application of semiconductor laser, the shaping of multi-disc shaping lens Method is more demanding for assembly precision, orthopedic systems can be made more simplified with single element lens shaping.
Summary of the invention
The present invention is a kind of design for realizing the shaping of semiconductor fast and slow axis with one piece of cemented doublet.
The position put is needed to determine by lens according to the caliber size of lens, selecting refractive index is n21 conduct of material The front lens of cemented doublet, that is, first lens material, refractive index n3Material 2 be used as rear lens i.e. second lens material Expect, uses the method gluings of double gluings for one piece of thick lens between two lens of front and back, three faces of this cemented doublet are followed successively by Aspherical, spherical surface, spherical surface carry out shaping, n to light beam2> n3。
The front surface of first lens is the convex aspheric surface cylinder of fast axis direction, reaches the light beam of fast axis direction in parallel, Its aspherical equation is by refraction equation n1sinθ1=n2sinθ2It obtains, wherein n1For air refraction, n2For the refraction of material 1 Rate, θ1It is light by air to aspherical incidence angle, θ2It is light by air to the aspherical angle of emergence.
The front surface of the rear surface of first lens i.e. second lens is concave spherical surface, is focused to the light of fast axis direction While, the light (being approximately Gauss light) of slow-axis direction is collimated.This spherical surface has target hot spot at a distance from front surface Size determines that radius, that is, spherical surface of this spherical surface is away from the distance of light source.
The rear surface of second lens is the convex spherical cylinder of fast axis direction, to the fast axis direction focused by previous surface Light collimated.The radius of this convex spherical cylinder is determined that 2 refractive index of material is n by the size of target hot spot3。
In fast axis direction, first pass through it is aspherical collimated, be focused by spherical surface, it is quasi- again finally by spherical surface Directly obtain the lesser hot spot of radius, fast axis direction structure chart such as Fig. 2；In slow-axis direction, slow axis hot spot is pressed using spherical surface Contracting, slow axis structure chart such as Fig. 3.
Energy is in X, the distribution map of Y-direction such as Fig. 3,4 after finally obtained shaping.
This lens is cemented doublet, first surface of first lens be it is aspherical, for fast axis direction light beam It is collimated；Second face is double glued spherical surfaces, while being focused to fast axis direction light beam to slow-axis direction light beam into Row collimation；Third face is cylinder, is collimated to the light beam of fast axis direction.
The aspherical aspheric design for fast axle and optical axis direction, is obtained by the refraction equation of geometric optics beam propagation Face type equation.
Spherical radius size determines by the refraction equation of slow-axis direction beam propagation, spherical surface position and eyeglass to light source distance It is related.
Cylinder is spherical surface in fast axle and optical axial plane, and radius length is determined by target spot size.
Detailed description of the invention
Fig. 1 is sectional view of the shaping lens in fast axis direction.
Fig. 2 is sectional view of the shaping lens in slow-axis direction.
Fig. 3 be shaping after energy fast axis direction distribution map.
Fig. 4 be shaping after energy slow-axis direction distribution map.
In figure, Z-direction is direction of beam propagation, and Y is the fast axis direction of semiconductor laser, and X is semiconductor laser Slow-axis direction, Fig. 1 is in YOZ plane, and Fig. 2 is in XOZ plane.
Specific embodiment
Specific embodiment: in conjunction with Fig. 1 to Fig. 4, illustrating present embodiment, and laser uses 405nm in present embodiment Semiconductor laser, the fast axis direction angle of divergence are 20 °, and the slow-axis direction angle of divergence is 10 °, and LD item width is 1*20um, and target is It penetrates hot spot to be square, specifically realize according to the following steps:
It determines that lens placement position L is 8mm by the assembly of laser, the bore ω of lens is determined by fast axis divergence angle,Wherein ω0=0.5um, d are virtual point source to the distance of actual light source, can obtain ω=1.411mm, The bore ω ' of lens is determined by slow axis divergence,Wherein ω0'=10um, d ' arrive for virtual point source The distance of actual light source can obtain ω '=0.7099mm, i.e. aperture of lens is 1.411mm.
By law of refraction n1sinθ1=n2sinθ2And the geometric optics that light is propagated calculates,This For the aspherical face type in the direction YOZ: z=-0.0005y4-0.006y3+0.132y2-0.003y+8000。
Cemented surface is spherical surface, and the centre of sphere is on Z axis, apart from light source (n3-n2) * (L+d)+L=9622.860um, spherical surface half Diameter, that is, r1=(n3-n2) * (L+d)=1622.860um, thereby determine that cemented surface equation, and cemented surface with it is aspherical at a distance from pair The fast axis direction collimated does not influence, and the edge thickness in two faces is 0.
Exit facet is spherical surface cylinder, is overlapped with the focus on previous surface, can be obtained by the Gauss formula being imaged, and radius is with before The radius r on one surface1Relationship are as follows: r2=1.2575r1, and the distance D apart from a upper plane is the difference of two curved surface focal lengths, is obtained To r2=2040.746um, D=6048.399um.
Fig. 3,4 are the Energy distribution situation after shaping, and due to the presence of diffraction, this hot spot is TEM01Mould.

Claims (5)

1.一种应用于半导体激光器光束整形的透镜，其特征在于：透镜的口径大小由透镜需要摆放的位置确定，选定折射率为n2的材料1作为双胶合透镜的前透镜即第一个透镜材料，折射率为n3的材料2作为后透镜即第二个透镜材料，前后两透镜之间采用双胶合的方法胶合为一块厚透镜，此双胶合透镜的三个面依次为非球面、球面、球面，对光束进行整形，n2＞n3；1. a lens that is applied to semiconductor laser beam shaping is characterized in that: the aperture size of the lens is determined by the position where the lens needs to be placed, and the selected refractive index is that the material 1 of n 2 is the front lens of the doublet as the first lens. There are two lens materials, the material 2 with a refractive index of n 3 is used as the rear lens, that is, the second lens material, and the front and rear lenses are cemented into a thick lens by double cementing. The three surfaces of the double cemented lens are aspherical surfaces in turn , sphere, sphere, shape the beam, n 2 >n 3 ; 第一个透镜的前表面为快轴方向的凸非球面柱面，使快轴方向的光束达到平行，其非球面方程由折射方程n1 sinθ1＝n2 sinθ2得出，其中n1为空气折射率，n2为材料1的折射率，θ1为光由空气到非球面的入射角，θ2为光由空气到非球面的出射角； The front surface of the first lens is a convex aspheric cylindrical surface in the direction of the fast axis, so that the light beam in the direction of the fast axis is parallel. Refractive index of air, n 2 is the refractive index of material 1, θ 1 is the incident angle of light from air to aspheric surface, θ 2 is the exit angle of light from air to aspheric surface; 第一个透镜的后表面即第二个透镜的前表面为凹球面，对快轴方向的光进行聚焦的同时，对慢轴方向的光进行准直；此球面与前表面的距离由目标光斑的大小决定，此球面的半径即球面距光源的距离；The rear surface of the first lens, that is, the front surface of the second lens, is a concave spherical surface, which focuses the light in the direction of the fast axis and collimates the light in the direction of the slow axis; the distance between the spherical surface and the front surface is determined by the target light spot The size of the sphere is determined, the radius of the sphere is the distance from the sphere to the light source; 第二个透镜的后表面为快轴方向的凹球面柱面，对通过前一表面聚焦的快轴方向的光进行准直；此凹球面柱面的半径由目标光斑的大小决定，材料2折射率为n3；The rear surface of the second lens is a concave spherical cylindrical surface in the fast axis direction, which collimates the light in the fast axis direction focused by the previous surface; the radius of the concave spherical cylindrical surface is determined by the size of the target light spot, and the material 2 refracts rate n 3 ; 在快轴方向，先通过非球面进行准直，再 通过球面进行聚焦，最后通过球面再次准直得到半径较小的光斑；在慢轴方向，采用球面对慢轴光斑进行压缩；In the fast axis direction, the aspheric surface is used for collimation, then the spherical surface is used for focusing, and finally the spherical surface is collimated again to obtain a light spot with a smaller radius; in the slow axis direction, the slow axis light spot is compressed by the spherical surface; 最终得到的整形后能量在快轴，慢轴方向的分布。The final distribution of the reshaped energy in the direction of the fast axis and the slow axis is obtained. 2.根据权利要求1所述的一种应用于半导体激光器光束整形的透镜，其特征在于：此透镜为双胶合透镜，第一片透镜的第一个表面为非球面，用于对快轴方向光束进行准直；第二个面为双胶合球面，在对快轴方向光束进行聚焦的同时对慢轴方向光束进行准直；第三个面为柱面，对快轴方向的光束进行准直。2. a kind of lens that is applied to semiconductor laser beam shaping according to claim 1 is characterized in that: this lens is a doublet lens, and the first surface of the first lens is an aspheric surface, which is used for the direction of the fast axis The beam is collimated; the second surface is a double glued spherical surface, which focuses the beam in the fast axis direction and collimates the beam in the slow axis direction; the third surface is a cylindrical surface, which collimates the beam in the fast axis direction . 3.根据权利要求1所述的一种应用于半导体激光器光束整形的透镜，其特征在于：非球面为快轴与光轴方向的非球面柱透镜，由几何光学光束传播的折射方程得出面型方程。3. a kind of lens that is applied to semiconductor laser beam shaping according to claim 1, it is characterized in that: aspheric surface is the aspheric cylindrical lens of fast axis and optical axis direction, by the refraction equation of geometrical optics beam propagation draws surface type equation. 4.根据权利要求1所述的一种应用于半导体激光器光束整形的透镜，其特征在于：球面半径大小由慢轴方向光束传播的折射方程决定，球面位置与镜片到光源距离有关。4 . The lens for beam shaping of semiconductor lasers according to claim 1 , wherein the spherical radius is determined by the refraction equation of light beam propagation in the slow axis direction, and the spherical position is related to the distance from the lens to the light source. 5 . 5.根据权利要求1所述的一种应用于半导体激光器光束整形的透镜，其特征在于：柱面在快轴与光轴平面内为球面，其半径长度由目标光斑大小决定。5 . The lens for beam shaping of a semiconductor laser according to claim 1 , wherein the cylindrical surface is a spherical surface in the plane of the fast axis and the optical axis, and the length of its radius is determined by the size of the target light spot. 6 .
CN201710181008.6A 2017-03-24 2017-03-24 A lens for beam shaping of semiconductor laser Expired - Fee Related CN106873168B (en)

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CN109188398B (en) * 2018-09-26 2023-08-04 深圳市速腾聚创科技有限公司 Laser radar, system and method for converging fast and slow axis beam energy
CN109193342B (en) * 2018-10-15 2019-11-15 中国科学院理化技术研究所 a semiconductor laser
EP4095587A4 (en) * 2020-02-19 2023-03-15 Huawei Technologies Co., Ltd. OPTICAL ASSEMBLY AND LIDAR SYSTEM
CN115241735A (en) * 2022-07-27 2022-10-25 常州纵慧芯光半导体科技有限公司 Square light spot laser module and parameter determination method thereof
CN120981756A (en) * 2023-12-19 2025-11-18 深圳引望智能技术有限公司 Optical components, optical systems and lidar

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CN201828712U (en) * 2010-06-24 2011-05-11 中国人民解放军总参谋部第六十研究所 One-dimensional fiber compression coupling laser transmission device
DE202014001376U1 (en) * 2014-02-13 2014-02-24 Osram Gmbh lighting device
CN204347354U (en) * 2014-12-01 2015-05-20 福建福晶科技股份有限公司 A kind of semiconductor laser device beam shaping structure
CN204696448U (en) * 2015-05-27 2015-10-07 中国工程物理研究院应用电子学研究所 A kind of fast and slow axis beam quality homogenizer of semiconductor laser
JP3207939U (en) * 2016-09-29 2016-12-08 株式会社カツラ・オプト・システムズ Beam shaping optical system and laser solder welding apparatus using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201828712U (en) * 2010-06-24 2011-05-11 中国人民解放军总参谋部第六十研究所 One-dimensional fiber compression coupling laser transmission device
DE202014001376U1 (en) * 2014-02-13 2014-02-24 Osram Gmbh lighting device
CN204347354U (en) * 2014-12-01 2015-05-20 福建福晶科技股份有限公司 A kind of semiconductor laser device beam shaping structure
CN204696448U (en) * 2015-05-27 2015-10-07 中国工程物理研究院应用电子学研究所 A kind of fast and slow axis beam quality homogenizer of semiconductor laser
JP3207939U (en) * 2016-09-29 2016-12-08 株式会社カツラ・オプト・システムズ Beam shaping optical system and laser solder welding apparatus using the same

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