CN106876316A - Pressure ring and semiconductor processing equipment - Google Patents

Abstract

The pressure ring and semiconductor processing equipment provided by the present invention comprise an outer ring part and an inner ring part which are nested with each other and connected as a whole, wherein the inner diameter of the outer ring part is larger than the diameter of the wafer; the inner diameter of the inner ring part is smaller than that of the wafer diameter, and the lower surface of the inner ring part is divided into a plurality of first areas and a plurality of second areas, the first area and the second area are arranged alternately along the circumference of the inner ring part, wherein the first area and the wafer The edge area of the upper surface is attached; a groove is formed in the second area, so that the inner ring part blocks and does not contact the edge area of the upper surface of the wafer at the second area. The pressure ring provided by the invention can solve the problem that the metal coating film is deposited on the side or back of the wafer, thereby improving the process result.

Description

Press ring and semiconductor processing equipment

technical field

The invention relates to the field of semiconductor manufacturing, in particular to a pressure ring and semiconductor processing equipment.

Background technique

In the manufacturing process of integrated circuits, physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is usually used to deposit materials such as metal layers on wafers. With the widespread application of Through Silicon Via (TSV) technology, PVD technology is mainly used to deposit barrier layers and copper seed layers in the through silicon vias. During the TSV deposition process, a clamp ring is usually used to fix the wafer.

FIG. 1 is a top view of a conventional pressure ring after fixing a wafer. Please refer to FIG. 1 , the pressure ring includes an annular body 1 , and a plurality of pressure jaws 3 are arranged on the inner peripheral wall of the annular body 1 , and the plurality of pressure jaws 3 are spaced and evenly distributed along the circumferential direction of the annular body 1 . Each pressing claw 3 presses the edge area of the upper surface of the wafer 2, thereby realizing the fixing of the wafer 2.

However, the above pressure ring inevitably has the following problems in practical applications:

FIG. 2A is a partial cross-sectional view of area A in FIG. 1 . FIG. 2B is a partial cross-sectional view of area B in FIG. 1 . Please refer to FIG. 2A and FIG. 2B together, area A is the area where the pressing jaws 3 press the wafer 2 ; area B is the area between two adjacent pressing jaws 3 . Wherein, in region B, there is a gap between the inner peripheral wall of the annular body 1 and the outer peripheral wall of the wafer 2, which makes metal ions (taking Al as an example) enter the gap during the deposition process, and Finally, it is deposited on the side or back of the wafer to form a metal coating, which will greatly interfere with the subsequent process and ultimately affect the process results.

Contents of the invention

The present invention aims to solve at least one of the technical problems in the prior art, and proposes a pressure ring and semiconductor processing equipment, which can solve the problem of metal coating deposited on the side or back of the wafer, thereby improving the process results.

In order to realize the object of the present invention, a pressure ring is provided, which is used to fix the wafer by pressing against the edge area of the upper surface of the wafer, including an outer ring part and an inner ring part that are nested and connected together, wherein, The inner diameter of the outer ring portion is larger than the diameter of the wafer; the inner diameter of the inner ring portion is smaller than the diameter of the wafer, and the lower surface of the inner ring portion is divided into a plurality of first regions and a plurality of second regions. Two areas, the first area and the second area are arranged alternately along the circumference of the inner ring, wherein the first area is attached to the edge area of the upper surface of the wafer; A groove is formed in the area, so that the inner ring part covers and does not contact the edge area of the upper surface of the wafer at the second area.

Preferably, the size of the inner ring follows the following formula:

Wherein, a is the vertical distance between the bottom surface of the groove and the upper surface of the wafer; D is the diameter of the wafer; d is the inner diameter of the inner ring.

Preferably, the vertical distance between the bottom surface of the groove and the upper surface of the wafer is 0.3mm.

Preferably, half of the difference between the diameter of the wafer and the inner diameter of the inner ring part is equal to 1mm.

Preferably, a recess is formed on the first region near the periphery of the ring hole of the inner ring to reduce the contact area between the inner ring and the upper surface of the wafer.

As another technical solution, the present invention also provides a pressure ring, which is used to fix the wafer by pressing against the edge region of the upper surface of the wafer, including an outer ring part and an inner ring part that are nested and connected together, Wherein, the inner diameter of the outer ring part is larger than the diameter of the wafer; the inner diameter of the inner ring part is smaller than the diameter of the wafer, and the lower surface of the inner ring part presses the edge area of the upper surface of the wafer.

Preferably, an annular recess is formed on the lower surface of the inner ring part near the periphery of the ring hole of the inner ring part to reduce the contact area between the inner ring part and the upper surface of the wafer.

As another technical solution, the present invention also provides a semiconductor processing equipment, including a process chamber, in which a susceptor for carrying a wafer and a pressure ring are arranged, and the pressure ring is used to press the The edge area of the upper surface of the wafer is used to fix the wafer on the base, and the pressure ring adopts the above-mentioned pressure ring provided by the present invention.

Preferably, the semiconductor processing equipment includes physical vapor deposition equipment, and the physical vapor deposition equipment is used to deposit Cu thin film, Ti thin film, Al thin film, AlN thin film, TiN thin film, ITO thin film, AlCu thin film _on the surface of the wafer Or TiW film.

Preferably, the semiconductor processing equipment includes etching equipment or pre-cleaning equipment.

The present invention has the following beneficial effects:

The pressure ring provided by the present invention comprises an outer ring part and an inner ring part which are nested and connected together, wherein the inner diameter of the outer ring part is larger than the diameter of the wafer; the inner diameter of the inner ring part is smaller than the diameter of the wafer, and the The lower surface of the inner ring part is divided into a plurality of first regions and a plurality of second regions, which are arranged alternately along the circumferential direction of the inner ring part. The wafer is fixed by pressing the edge area of the upper surface of the wafer by making the first area stick to the edge area of the upper surface of the wafer. At the same time, by forming a groove in the second area, the inner ring can block the edge area of the upper surface of the wafer at the second area without being in contact with it, so that the shielding effect of the second area of the inner ring Therefore, there will be no metal sputtering to the side or back of the wafer, and since the second area of the inner ring portion is not in contact with the upper surface of the wafer, the area of metal deposited on the upper surface of the wafer will not be reduced, thereby improving the process results.

The present invention also provides a pressure ring, which also includes an outer ring part and an inner ring part that are nested and connected together, wherein the inner diameter of the outer ring part is larger than the diameter of the wafer; the inner diameter of the inner ring part is smaller than the diameter of the wafer , and the lower surface of the inner ring part presses the edge area of the upper surface of the wafer, that is to say, the lower surface of the inner ring part presses the edge area of the upper surface of the wafer in its entirety, so that there is no gap between the pressure ring and the wafer, There is also no metal sputtering onto the sides or back of the wafer, which improves process results.

The semiconductor processing equipment provided by the present invention, by adopting the above-mentioned pressure ring provided by the present invention, not only will there be no metal sputtering to the side or back of the wafer, but also the area of metal deposited on the upper surface of the wafer will not be reduced, so that the process can be improved result.

Description of drawings

Fig. 1 is the top view of existing pressure ring after fixing wafer;

Figure 2A is a partial cross-sectional view of area A in Figure 1;

Fig. 2B is a partial sectional view of area B in Fig. 1;

Fig. 3 is a bottom view of a pressure ring provided by an embodiment of the present invention;

Fig. 4 is a partial cross-sectional view of the pressure ring in Fig. 3 in the first area and the second area;

Figure 5A is a bottom view of another pressure ring provided by an embodiment of the present invention; and

FIG. 5B is a partial cross-sectional view of the pressure ring in FIG. 5A .

detailed description

In order for those skilled in the art to better understand the technical solutions of the present invention, the pressure ring and semiconductor processing equipment provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

Fig. 3 is a bottom view of a pressure ring provided by an embodiment of the present invention. Referring to FIG. 3, the press ring is used to fix the wafer by pressing against the edge region of the upper surface of the wafer. The pressure ring includes an outer ring part 11 and an inner ring part 12 which are nested and connected together. That is to say, the pressure ring adopts an integral ring structure and is composed of an outer ring part and an inner ring part. The outer ring The part is the outer ring part 11, the inner diameter D1 of the outer ring part 11 is larger than the diameter of the wafer, so that when the pressure ring presses the wafer, the outer ring part 11 does not contact the wafer. The inner ring part is the inner ring part 12, the inner diameter D2 of the inner ring part 12 is smaller than the diameter of the wafer, and the lower surface of the inner ring part 12 is divided into a plurality of first regions 121 and a plurality of second regions 122, the first region The first area 121 and the second area 122 are arranged alternately along the circumferential direction of the inner ring portion 12 .

Wherein, FIG. 4 is a partial cross-sectional view of the pressure ring in FIG. 3 in the first region and the second region respectively. As shown in Figure 4 (a), in the lower surface of the inner ring portion 12, the first region 121 fits with the edge region of the upper surface of the wafer 13, thereby pressing the edge region of the upper surface of the wafer 13 to realize Fixation of the wafer 13. As shown in (b) of FIG. 4 , a groove is formed in the second region 122 so that the inner ring portion 12 blocks and does not contact the edge region of the upper surface of the wafer 13 at the second region 122 . Under the shielding effect of the second region 122 of the inner ring portion 12, no metal sputters to the side or back of the wafer 13, and since the second region 122 of the inner ring portion 12 is not in contact with the upper surface of the wafer, there will be no The area of metal deposited on the upper surface of wafer 13 is reduced, thereby improving process results.

Preferably, the size of the inner ring part 12 follows the following formula:

Wherein, a is the vertical distance between the bottom surface 122a of the groove and the upper surface of the wafer 13; D is the diameter of the wafer; d is the inner diameter D2 of the inner ring portion 12. The size of the inner ring portion 12 can ensure that the metal will not be sputtered to the side of the wafer 13 by following the above formula. Further preferably, the vertical distance a between the bottom surface of the groove 122a and the upper surface of the wafer 13 is 0.3 mm. One-half of the difference between the diameter D of the wafer 13 and the inner diameter D2 of the inner ring portion 12 (dimension b in the diagram of (b) in FIG. 4 ) is equal to 1 mm.

In addition, preferably, on the first region 121, a recess 123 is formed near the periphery of the ring hole of the inner ring part 12, in order to reduce the contact area between the inner ring part 12 and the upper surface of the wafer 13, thereby increasing the deposition rate. The metal area on the top surface of wafer 13, in turn, can improve process results.

As another technical solution, FIG. 5A is a bottom view of another pressure ring provided by an embodiment of the present invention. FIG. 5B is a partial cross-sectional view of the pressure ring in FIG. 5A . Please refer to FIG. 5A and FIG. 5B together. The present invention also provides a pressure ring for fixing the wafer by pressing against the edge region of the upper surface of the wafer. The pressure ring includes an outer ring part 21 and an inner ring part 22 which are nested and connected together. That is to say, the pressure ring adopts an integral ring structure and is composed of an outer ring part and an inner ring part. The outer ring Part is the outer ring portion 21 , the inner diameter D3 of the outer ring portion 21 is larger than the diameter of the wafer 24 , so that when the pressure ring presses the wafer 24 , the outer ring portion 21 does not contact the wafer 24 . The inner diameter D4 of the inner ring portion 22 is smaller than the diameter of the wafer 24 , and the lower surface of the inner ring portion 22 presses against the edge region of the upper surface of the wafer 24 to fix the wafer 24 . It should be noted that the dotted line in FIG. 5A is provided for distinguishing the boundary between the outer ring portion 21 and the inner ring portion 22 , and does not belong to the physical structure of the pressure ring.

Since the lower surface of the inner ring portion 22 is pressed against the edge region of the upper surface of the wafer 24, there is no gap between the pressure ring and the wafer 24, and there is no metal sputtering to the side or back of the wafer 24, thereby Process results can be improved.

Preferably, on the lower surface of the inner ring part 22, an annular recess 23 is formed near the periphery of the ring hole of the inner ring part 22, in order to reduce the contact area between the inner ring part 22 and the upper surface of the wafer 24, thereby increasing The large area of metal deposited on the upper surface of the wafer 24, in turn, can improve the process results.

As another technical solution, an embodiment of the present invention also provides a semiconductor processing equipment, which includes a process chamber, and a base for carrying a wafer and a pressure ring are arranged in the process chamber, wherein the pressure ring is used to pass the pressure ring. Hold the edge area of the upper surface of the wafer to fix the wafer on the susceptor. Moreover, the pressure ring adopts the above two types of pressure rings provided by the embodiment of the present invention.

In practical application, semiconductor processing equipment can be physical vapor deposition equipment, and this physical vapor deposition equipment is used for depositing Cu thin film, Ti thin film, Al thin film, AlN thin film, TiN thin film, ITO thin film, _AlCu thin film or TiW film. Alternatively, the semiconductor processing equipment may also be an etching equipment or a pre-cleaning equipment, which is used to perform an etching process on a wafer.

In the semiconductor processing equipment provided by the embodiment of the present invention, by using the above two pressure rings provided by the embodiment of the present invention, not only will no metal be sputtered to the side or back of the wafer, but also the metal deposited on the upper surface of the wafer will not be reduced. area, which can improve process results.

It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (10)

1. a kind of pressure ring, described for being fixed by pushing down the fringe region of upper wafer surface Chip, it is characterised in that including outer portion that is mutually nested and being connected as a single entity and internal ring portion, Wherein,

Diameter of the internal diameter of the outer portion more than the chip；

In the diameter of the internal diameter less than the chip of the internal ring portion, and under the internal ring portion Surface is divided into multiple first areas and multiple second areas, the first area and the secondth area Domain along the internal ring portion circumferential interphase distribution, wherein,

The first area fits with the fringe region of the upper wafer surface；

Form fluted in the second area, so that the internal ring portion is at the second area The fringe region of the upper wafer surface is blocked, and is not contacted therewith.

2. pressure ring according to claim 1, it is characterised in that the chi of the internal ring portion It is very little to follow below equation：

$\frac{a}{(D-d)\×0.5}\≤\frac{1}{7}$

Wherein, between a is vertical between the bottom surface of the groove and the upper surface of the chip Away from；D is the diameter of the chip；D is the internal diameter of the internal ring portion.

3. pressure ring according to claim 2, it is characterised in that the bottom surface of the groove Vertical spacing and the upper surface of the chip between is 0.3mm.

4. pressure ring according to claim 2, it is characterised in that the diameter of the chip With the difference of the internal diameter of the internal ring portion 1/2nd are equal to 1mm.

5. the pressure ring according to claim 1-4 any one, it is characterised in that in institute State on first area, and recess is formed with the periphery of the annular distance of the internal ring portion, be used to Reduce the contact area of the internal ring portion and the upper wafer surface.

6. a kind of pressure ring, described for being fixed by pushing down the fringe region of upper wafer surface Chip, it is characterised in that including outer portion that is mutually nested and being connected as a single entity and internal ring portion, Wherein,

Diameter of the internal diameter of the outer portion more than the chip；

The internal diameter of the internal ring portion less than the chip diameter, and the internal ring portion following table State the fringe region of upper wafer surface in face pressure residence.

7. pressure ring according to claim 6, it is characterised in that in the internal ring portion On lower surface, and annular recess is formed with the periphery of the annular distance of the internal ring portion, be used to Reduce the contact area of the internal ring portion and the upper wafer surface.

8. a kind of semiconductor processing equipment, including processing chamber, sets in the processing chamber The pedestal and pressure ring for bearing wafer are equipped with, the pressure ring is used for by pushing down the chip The fringe region of upper surface, the chip is fixed on the pedestal, it is characterised in that The pressure ring is using the pressure ring described in claim 1-5 any one；Or, will using right Seek the pressure ring described in 6 or 7.

9. semiconductor processing equipment according to claim 8, it is characterised in that described Semiconductor processing equipment includes Pvd equipment, and the Pvd equipment is used for Surface deposits Cu films, Ti films, Al films, AlN films, TiN on the wafer Film, ito thin film, AlCu₄Film or TiW films.

10. semiconductor processing equipment according to claim 8, it is characterised in that described Semiconductor processing equipment includes etching apparatus or prerinse equipment.