CN106876239A - The impedance matching methods and device of pulsed radiofrequency plasma - Google Patents
The impedance matching methods and device of pulsed radiofrequency plasma Download PDFInfo
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Abstract
The invention discloses the impedance matching methods and device of a kind of pulsed radiofrequency plasma.In the method and device, plasma impedance matching process was not limited in a pulse period, whether the plasma impedance matching process in high RF power phase plasma impedance matching process or low radio frequency power stage can be carried out within the different pulse periods, therefore, the method that the present invention is provided is not limited by the pulse period, even if can also respectively search the rf frequency that matches with the plasma in high and low radio-frequency power stage respectively for the pulsed radiofrequency plasma of high pulse frequencies.
Description
Technical field
The present invention relates to pulsed radiofrequency plasma field, more particularly to a kind of resistance of pulsed radiofrequency plasma
Anti- matching process and device.
Background technology
There is high and low two kinds of power outputs in the radio-frequency power of pulsed radiofrequency plasma；Correspondingly, etc.
The impedance of gas ions there is also the impedance of high and low two states.In frequency modulation match plasma technology, need
Two different matching rf frequencies are wanted to carry out the impedance of the height two states of match plasma.So will
Seeking automatic frequency adjustment impedance match technique needs under the high power and low power state of pulsed RF power respectively
Search corresponding matching frequency.
However, due to the limitation of frequency modulation matching algorithm and sampling rate, automatic frequency adjustment technology is needed in 50-100
The time of μ s or so can just search matching frequency.For for pulsed RF power, if pulse frequency compared with
Low, the pulse period is more long, such as when the pulse period is more than 50~100 μ s, existing automatic frequency adjustment technology can
To determine the corresponding matching frequency of power output within a pulse period.But, under high pulse frequencies,
Pulse period is shorter, for example the pulse period be less than 50~100 μ s, existing automatic frequency adjustment technology be difficult compared with
Matching frequency is searched in bursts period.
The content of the invention
In view of this, the invention provides the impedance matching methods and device of a kind of pulsed radiofrequency plasma,
To search the frequency matched respectively with the impedance of pulsed RF power.
In order to solve the above-mentioned technical problem, present invention employs following technical scheme：
A kind of impedance matching methods of pulsed radiofrequency plasma, there is provided pulsed radio-frequency power is anti-to plasma
Chamber is answered, the pulsed radio-frequency power includes multiple pulse periods, firing frequency work(is included in each pulse period
Rate stage, methods described includes the plasma impedance matching process in high RF power stage；
The plasma impedance matching process in the high RF power stage includes：
The rf frequency of high RF power phase sets first within the i-th pulse period, obtains and described first
First numerical value of the corresponding impedance parameter of rf frequency；The impedance parameter is to load to hinder with plasma reaction chamber
Any parameter of decorrelation；The impedance parameter is in nonlinear function with the relation of rf frequency, described
Nonlinear function is the nonlinear function with minimum；
The rf frequency of high RF power phase sets second within j-th pulse period, obtains and described the
The second value of the corresponding impedance parameter of two rf frequencies；
Compare the size of the first rf frequency and the second rf frequency, obtain the first comparative result, compare first
The size of numerical value and second value, obtains the second comparative result；
According to the first comparative result and the second comparative result, k-th high RF power rank of pulse period is adjusted
The rf frequency of section, until the corresponding impedance parameter of rf frequency after adjustment reaches minimum value；
Determine that the corresponding rf frequency of impedance parameter minimum value is the impedance phase with radio-frequency power plasma
The rf frequency matched somebody with somebody；
Wherein, i ＜ j ＜ k, and i, j, k are positive integer.
A kind of impedance-matching device of pulsed radiofrequency plasma, there is provided pulsed radio-frequency power is anti-to plasma
Chamber is answered, the pulsed radio-frequency power includes multiple pulse periods, firing frequency work(is included in each pulse period
Rate stage, described device includes the plasma impedance coalignment in high RF power stage；
The plasma impedance coalignment in the high RF power stage includes：
First setup unit, for the radio frequency of high RF power phase sets first within the i-th pulse period frequently
Rate；The high RF power stage is identical with the radio-frequency power stage of plasma impedance matching process；
First acquisition unit, the first number for obtaining impedance parameter corresponding with first rf frequency
Value；The impedance parameter is any parameter related to plasma reaction chamber load impedance；The impedance parameter
Relation with rf frequency is in nonlinear function, and the nonlinear function is with the non-linear of minimum
Function；
Second setup unit, in jth ' radio frequency of high RF power phase sets second in the individual pulse period
Frequency；
Second acquisition unit, the second number for obtaining impedance parameter corresponding with second rf frequency
Value,
First comparing unit, the size for comparing the first rf frequency and the second rf frequency, obtains first
Comparative result, compares the size of the first numerical value and second value, obtains the second comparative result；
First adjustment unit, for according to the first comparative result and the second comparative result, adjusting kth ' individual pulse
The rf frequency in the high RF power stage in cycle, until the corresponding impedance parameter of rf frequency after adjustment reaches
To minimum value；
First determining unit, for determining that the corresponding rf frequency of impedance parameter minimum value is with radio-frequency power etc.
The rf frequency of the matches impedances of gas ions；
Wherein, i ＜ j ＜ k, and i, j, k are positive integer.
Compared to prior art, the invention has the advantages that：
As seen through the above technical solutions, the impedance matching methods of the pulsed radiofrequency plasma that the present invention is provided
In, plasma impedance matching process was not limited in a pulse period, whether the high RF power stage
The plasma impedance matching process in plasma impedance matching process or low radio frequency power stage can be with
Carried out within the different pulse periods, therefore, the method that the present invention is provided is not limited by the pulse period, even if
For high pulse frequencies pulsed radiofrequency plasma can also search respectively respectively with high and low radio-frequency power
The rf frequency that the plasma in stage matches.
Brief description of the drawings
In order to be expressly understood specific embodiment of the invention, below to describing specific embodiment party of the invention
The accompanying drawing used during formula does a brief description.It should be evident that these accompanying drawings are only parts of the invention implementing
Example, those skilled in the art can also obtain other accompanying drawings on the premise of creative work is not paid.
Fig. 1 is the graph of relation of reflection power and RF RF source frequencies in correlation technique；
Fig. 2 is the plasma impedance matching process stream in high RF power stage provided in an embodiment of the present invention
Journey schematic diagram；
Fig. 3 is the plasma impedance matching process stream in low radio frequency power stage provided in an embodiment of the present invention
Journey schematic diagram；
Fig. 4 is the impedance matching methods of the plasma in high RF power stage provided in an embodiment of the present invention
A schematic flow sheet for specific embodiment；
Fig. 5 is the impedance-matching device of the plasma in high RF power stage provided in an embodiment of the present invention
Structural representation；
Fig. 6 is the first adjustment unit structural representation provided in an embodiment of the present invention；
Fig. 7 is the impedance-matching device of the plasma in low radio frequency power stage provided in an embodiment of the present invention
Structural representation.
Specific embodiment
To make goal of the invention of the invention, technological means and technique effect more clear complete, with reference to attached
Figure is described in detail to specific embodiment of the invention.
The load impedance of RF power delivery system is by transmission line, impedance matching network and plasma chamber
Impedance determines.By verification experimental verification, any one parameter related to plasma reaction chamber load impedance with
The relation of the frequency of RF radio frequency sources is nonlinear function, and the nonlinear function is with extreme value
Nonlinear function.And it is related to load impedance when the impedance matching of load impedance and RF radio frequency sources
Any one parameter reaches extreme value at this moment.
The impedance parameter related to plasma reaction chamber load impedance is a lot, for example, can be reflection power, anti-
Penetrate coefficient or impedance.As an example, Fig. 1 shows the relation schematic diagram of reflection power and RF RF source frequencies.
From figure 1 it appears that reflection power is the non-linear letter with minimum with the relation of RF RF source frequencies
Number relation, when load impedance and RF radio frequency source matches impedances, reflection power reaches minimum value.And
It is believed that flex point of the corresponding reflection power of matching frequency for relation curve.
The impedance matching methods of the pulsed radiofrequency plasma that the present invention is provided are namely based on above-mentioned principle and realize
's.The specific reality of the impedance matching methods of the pulsed radiofrequency plasma for providing the present invention below in conjunction with the accompanying drawings
The mode of applying is described in detail.
Because pulse radiation frequency includes high power RF stage and low-power radio frequency stage, when the low-power radio frequency stage
Radio-frequency power when being not zero, not only need to match the plasma impedance in high power RF stage,
Also need to match the plasma impedance in low-power radio frequency stage.
Again due to the high and low power radio-frequency stage plasma impedance matching need respectively to different radio frequencies frequently
Rate carries out frequency modulation.So, the impedance matching methods of the pulsed radiofrequency plasma that the present invention is provided not only can be with
Plasma impedance matching process including the high RF power stage can also include the low radio frequency power stage
Plasma impedance matching process.
The specific embodiment of the plasma impedance matching process in high RF power stage is introduced first.The resistance
Anti- matching process provides pulsed radio-frequency power to plasma reaction chamber, the pulsed radio-frequency power bag first
Include multiple pulse periods.Include high RF power stage and low radio frequency power stage in each pulse period.
Fig. 2 is that the flow of the plasma impedance matching in high RF power stage provided in an embodiment of the present invention is shown
It is intended to.As shown in Fig. 2 the method comprises the following steps S201 to S205：
S201, high RF power phase sets the first rf frequency f1 within the i-th pulse period, obtain with
First numerical value y1 of the first corresponding impedance parameters of rf frequency f1：
It should be noted that in embodiments of the present invention, impedance parameter is and plasma reaction chamber load impedance
Related any parameter；The impedance parameter is in nonlinear function with the relation of rf frequency, described non-
Linear function is the nonlinear function with minimum.As an example, impedance parameter can for reflection power,
Reflectance factor or impedance.
In addition, in embodiments of the present invention, the first rf frequency f1 of setting can be arbitrary value.As can
Embodiment is selected, it is attached that the first rf frequency f1 can rule of thumb be set in the frequency matched with impedance of plasma
Closely, frequency modulation match time can so be shortened.
In embodiments of the present invention, i is positive integer.
S202, high RF power phase sets the second rf frequency f2 within j-th pulse period, obtain
The second value y2 of impedance parameter corresponding with the second rf frequency f2：
Wherein, i ＜ j, and j are positive integer.
As alternative embodiment of the invention, in order to rapidly and accurately search and the high RF power stage
The rf frequency that plasma impedance matches, preferably sets the second radio frequency frequently near the first rf frequency f1
Rate f2, and to ensure the first numerical value y1 and the second radio frequency of the corresponding impedance parameters of the first rf frequency f1 frequently
The second value y2 of the corresponding impedance parameters of rate f2 is different, i.e., y1 is not equal to y2.In other words, the second radio frequency
Frequency f2 is as closely as possible close to the first rf frequency f1, while to ensure the corresponding resistances of the second rf frequency f2
First numerical value y1 of the second value y2 of anti-parameter impedance parameters corresponding with the first rf frequency f1 is unequal.
As an example, when the first rf frequency f1 is less than 10MHz, the second rf frequency f2 and the first radio frequency
The difference on the frequency of frequency f1 can be 5~200KHz, when the first rf frequency f1 is more than or equal to 10MHz, the
The difference on the frequency of two rf frequency f2 and the first rf frequency f1 can be 1~50kHz.
S203, the size for comparing the first rf frequency f1 and the second rf frequency f2, obtain the first comparative result,
Compare the size of the first numerical value y1 and second value y2, obtain the second comparative result.
S204, according to the first comparative result and the second comparative result, adjust k-th firing frequency of pulse period
The rf frequency of power phase, until the corresponding impedance parameter of rf frequency after adjustment reaches minimum value.
Wherein, j ＜ k, and k are positive integer.
The specific implementation of step S203 and step S204 will be described in detail in following specific embodiments.
S205, determine that the corresponding rf frequency of impedance parameter minimum value is the plasma with the high RF power stage
The rf frequency of the matches impedances of body.
It is above the plasma impedance matching process in high RF power stage provided in an embodiment of the present invention
Specific embodiment.
The specific embodiment of the plasma impedance method of lower power stage is described below.The impedance matching
Cheng Shouxian provides pulsed radio-frequency power to plasma reaction chamber, and the pulsed radio-frequency power includes multiple arteries and veins
Rush the cycle.Include high RF power stage and low radio frequency power stage in each pulse period.
Fig. 3 is the plasma impedance matching process in low radio frequency power stage provided in an embodiment of the present invention
Schematic flow sheet.As shown in figure 3, the method comprises the following steps S301 to step S305：
S301, the rf frequency f5 ' of high RF power phase sets the 5th within the i-th ' pulse period, obtain with
5th numerical value y5 ' of the corresponding impedance parameters of the 5th rf frequency f5 '.
S302, in jth ' the rf frequency f6 ' of high RF power phase sets the 6th in the individual pulse period, obtain
Take the 6th numerical value y6 ' of impedance parameter corresponding with the 6th rf frequency f6 '.
S303, the size for comparing the 5th rf frequency f5 ' and the 6th rf frequency f6 ', obtain the 3rd and compare knot
Really, compare the size of the 5th numerical value y5 ' and the 6th numerical value y6 ', obtain the 4th comparative result.
S304, according to the 3rd comparative result and the 4th comparative result, adjust kth ' the individual pulse period shoots high
The rf frequency of frequency power phase, until the corresponding impedance parameter of rf frequency after adjustment reaches minimum value.
S305, determine that the corresponding rf frequency of impedance parameter minimum value is the plasma with the high RF power stage
The rf frequency of the matches impedances of body.
It should be noted that in the plasma impedance matching process in low radio frequency power stage, i'＜ j'＜ k',
And i ', j ', k ' are positive integer.
It should be noted that in embodiments of the present invention, the plasma impedance matching in high RF power stage
Process is similar to the plasma impedance matching process in low radio frequency power stage, and it the difference is that only two
The initial radio frequency frequency of phase sets is different, and its needs is adjusted to different initial radio frequency frequencies.In addition,
I can be with equal with i ', it is also possible to, similarly, j can be with equal with j ', it is also possible to, k and k ' can
With equal, it is also possible to.
High RF power stage and the plasma impedance in low radio frequency power stage that the comprehensive present invention is provided
It is to set and adjust rf frequency within the corresponding radio-frequency power stage of pulse period in method of completing the square.Wherein,
The radio-frequency power rank in corresponding radio-frequency power stage and plasma impedance matching process in the different pulse periods
Duan Xiangtong.It is right in the different pulse periods when the plasma impedance process in the high RF power stage
The radio-frequency power stage is answered for the high RF power stage, when the plasma impedance mistake in the low radio frequency power stage
Cheng Shi, the corresponding radio-frequency power stage in the different pulse periods is the low radio frequency power stage.
In addition, in embodiments of the present invention, the plasma impedance matching process in high RF power stage with it is low
The plasma impedance matching process in radio-frequency power stage can be carried out simultaneously, it is also possible to which timesharing is carried out.Also
It is to say, in embodiments of the present invention, the hopping pattern of high and low radio-frequency power can be respectively set and be controlled.
From the foregoing, it will be observed that the impedance matching methods of the pulsed radiofrequency plasma of present invention offer can set respectively
The initial radio frequency frequency of high and low radio-frequency power phase plasma impedance matching process, then respectively according to not
Same initial radio frequency frequency is adjusted.Therefore, the plasma impedance matching process in high RF power stage
Rf frequency independence that can be different to two with the plasma impedance matching process in low radio frequency power stage
Frequency modulation, searches the rf frequency for matching with the plasma impedance in high and low radio-frequency power stage respectively.
Further, since the plasma impedance matching process in high and low radio-frequency power stage can be carried out independently,
It is thus able to reduce rf frequency and jumps on a large scale the mismatch problems for causing.
In addition, in the impedance matching methods of the pulsed radiofrequency plasma of present invention offer, high and low radio frequency work(
The plasma impedance matching process in rate stage was not limited in a pulse period, whether high RF power
The plasma impedance matching process in phase plasma impedance matching process or low radio frequency power stage is equal
Can be carried out within the different pulse periods, therefore, the method that the present invention is provided is not limited by the pulse period,
Even if for high pulse frequencies pulsed radiofrequency plasma can also search respectively respectively with high and low radio frequency
The rf frequency that the plasma of power phase matches.Thus, the method that the present invention is provided can reach arteries and veins
Rush the effect of the stable impedance matching of radio frequency plasma.
Ratio is illustrated by taking the plasma impedance matching process in high RF power stage described above as an example below
The specific embodiment of plasma impedance matching process when relatively result is Different Results.
Fig. 4 is the specific implementation of the plasma impedance matching process in the high RF power stage that the present invention is provided
The schematic flow sheet of mode.As shown in figure 4, the method is comprised the following steps：
S401, high RF power phase sets the first rf frequency f1 within the i-th pulse period, obtain with
First numerical value y1 of the first corresponding impedance parameters of rf frequency f1；
S402, high RF power phase sets the second rf frequency f2 within j-th pulse period, obtain
The second value y2 of impedance parameter corresponding with the second rf frequency f2：
Step S401 to step S402 is identical to step S202 with the step S201 in above-described embodiment, in order to
For the sake of briefly, it is not described in detail herein.
S403, the size for comparing the first rf frequency f1 and the second rf frequency f2, compare the first numerical value y1 and
The size of second value y2：
When the second rf frequency f2 is more than the first rf frequency f1 and second value y2 is more than the first numerical value y1,
Perform step S404；
When the second rf frequency f2 is more than the first rf frequency f1 and second value y2 is less than or equal to the first numerical value
During y1, step S409 is performed.
S404, the value of the first rf frequency f1 is assigned to the second rf frequency f2, the first numerical value y1 is assigned
It is worth and gives second value y2：
It is formulated as：F2=f1, y2=y1.
S405, reduce the second rf frequency f2, make k-th corresponding radio-frequency power stage of pulse period
Rf frequency reaches the 3rd rf frequency f3, obtains the 3rd of the corresponding impedance parameters of the 3rd rf frequency f3
Numerical value y3：
The step-length for setting the second rf frequency f2 reductions is Δ f1, then the 3rd rf frequency f3 and the second radio frequency be frequently
The relation of rate f2 is：F3=f2- Δs f1.Wherein, in order to ensure finding matching frequency exactly, alternatively,
Δ f1 is small as much as possible, while ensureing the third value y3 and the of the corresponding impedance parameters of the 3rd rf frequency f3
The second value y2 of the corresponding impedance parameters of two rf frequency f2 is unequal.
S406, the size for comparing third value y3 and second value y2,
When third value y3 is more than second value y2, it is formulated as：Y3 ＞ y2, perform step
S407。
When third value y3 is less than or equal to second value y2, it is formulated as：Y3≤y2, performs step
S408。
S407, determine that the second rf frequency f2 is to match with the plasma impedance in high RF power stage
Rf frequency：
It should be noted that the second rf frequency f2 described in this step is the second rf frequency after updating
F2, the first rf frequency f1 for as setting.
The second rf frequency f2 after compared to renewal, increase or reduction rf frequency, its corresponding impedance ginseng
Several numerical value is all higher than second value y2.So, second value y2 is the minimum value of impedance parameter, so,
Second rf frequency f2 is the rf frequency matched with the plasma impedance in high RF power stage.
S408, the value of the 3rd rf frequency f3 is assigned to the second rf frequency f2, by third value y3 assignment
Second value y2 is given, is returned and is performed step S405：
It is formulated as：F2=f3, y2=y3.
S409, the second rf frequency f2 of increase, make k-th corresponding radio-frequency power stage of pulse period
Rf frequency reaches the 4th rf frequency f4, obtains the 4th of the corresponding impedance parameters of the 4th rf frequency f4
Numerical value y4；
The step-length for setting the second rf frequency f2 increases is Δ f2, then the 4th rf frequency 4 and the second rf frequency
The relation of f2 is：F4=f2+ Δs f2.Wherein, in order to ensure finding matching frequency exactly, alternatively,
Δ f2 is small as much as possible, while ensureing the 4th numerical value y4 and the of the corresponding impedance parameters of the 4th rf frequency f4
The second value y2 of the corresponding impedance parameters of two rf frequency f2 is unequal.
S410, the size for comparing the 4th numerical value y4 and second value y2,
When the 4th numerical value y4 is more than second value y2, step S407 is performed.
When the 4th numerical value y4 is less than or equal to second value y2, step S411 is performed.
S407, determine that the second rf frequency is with the radio frequency of the matches impedances of high RF power plasma frequently
Rate.
S411, the value of the 4th rf frequency f4 is assigned to the second rf frequency f2, by the 4th numerical value y4 assignment
Second value y2 is given, k-th pulse period is updated to m-th pulse period, wherein, m ＞ k, and m
It is positive integer, returns and perform step S409：
It is formulated as：F2=f4, y2=y4, k=m.
It is above the plasma impedance matching process in high RF power stage provided in an embodiment of the present invention
Specific embodiment.
The specific embodiment party of the plasma impedance matching process based on the high RF power stage shown in Fig. 4
Formula, those skilled in the art can equally get the plasma impedance matching process in low radio frequency power stage
Specific embodiment.For the sake of brevity, it is not described in detail herein.
The impedance matching methods of the pulsed radiofrequency plasma provided based on above-described embodiment, the embodiment of the present invention
Additionally provide a kind of impedance-matching device of pulsed radiofrequency plasma.Referring specifically to following examples.
It should be noted that the impedance-matching device of pulsed radiofrequency plasma provided in an embodiment of the present invention is not
Can only include that the plasma impedance coalignment in high RF power stage can also include low radio frequency power
The plasma impedance coalignment in stage.Wherein, the plasma impedance matching dress in high RF power stage
Putting can match with the plasma impedance coalignment in low radio frequency power stage for same plasma impedance
Device, or separate plasma impedance coalignment.
In embodiments of the present invention, the structure of the plasma impedance coalignment in the high RF power stage
As shown in figure 5, it is included with lower unit：
First setup unit 51, penetrates for the corresponding radio-frequency power phase sets first within the i-th pulse period
Frequent rate；The radio-frequency power stage phase for corresponding to radio-frequency power stage and plasma impedance matching process
Together；
First acquisition unit 52, for obtaining impedance parameter corresponding with first rf frequency first
Numerical value；The impedance parameter is any parameter related to plasma reaction chamber load impedance；The impedance ginseng
Number is in nonlinear function with the relation of rf frequency, and the nonlinear function is the non-thread with minimum
Property function；
Second setup unit 53, for the corresponding radio-frequency power phase sets second within j-th pulse period
Rf frequency；
Second acquisition unit 54, for obtaining impedance parameter corresponding with second rf frequency second
Numerical value,
First comparing unit 55, the size for comparing the first rf frequency and the second rf frequency, obtains
First comparative result, compares the size of the first numerical value and second value, obtains the second comparative result；
Adjustment unit 56, for according to the first comparative result and the second comparative result, adjusting k-th pulse
The rf frequency in the corresponding radio-frequency power stage in cycle, until the corresponding impedance parameter of rf frequency after adjustment
Reach minimum value；
First determining unit 57, for determining that the corresponding rf frequency of impedance parameter minimum value is and radio frequency work(
The rf frequency of the matches impedances of rate plasma；
Wherein, i≤j≤k, and i, j, k are positive integer.
As a specific embodiment of the invention, as shown in fig. 6, first adjustment unit 56 is specific
Including：
First assignment subelement 5601, for working as the first comparative result for the second rf frequency is penetrated more than first
Frequent rate, when the second comparative result is that second value is more than the first numerical value；By the value assignment of the first rf frequency
To the second rf frequency, the first numerical value is assigned to second value；
First frequency adjusts subelement 5602, for reducing the second rf frequency, makes k-th pulse period
The rf frequency in corresponding radio-frequency power stage reach the 3rd rf frequency,
First obtains subelement 5603, the 3rd number for obtaining the corresponding impedance parameter of the 3rd rf frequency
Value；
First comparing subunit 5604, the size for comparing third value and second value；
First determination subelement 5605, for when third value is more than second value, determining the second radio frequency
Frequency is the rf frequency with the matches impedances of radio-frequency power plasma.
Alternatively, first adjustment unit 56 can also include：
Second assignment subelement 5606, for when third value is less than or equal to second value, the 3rd being penetrated
The value of frequent rate is assigned to the second rf frequency, and third value is assigned into second value；And punish described
One frequency adjustment subelement 5602 performs the second rf frequency of the reduction, makes the right of k-th pulse period
The rf frequency in radio-frequency power stage is answered to reach the 3rd rf frequency.
Alternatively, first adjustment unit 56 can also include：
Second frequency adjusts subelement 5607, for being the second rf frequency more than the when the first comparative result
When one rf frequency and the second comparative result are that second value is less than or equal to the first numerical value, the second radio frequency of increase is frequently
Rate, makes second rf frequency in k-th corresponding radio-frequency power stage of pulse period reach the 4th radio frequency frequently
Rate；
Second obtains subelement 5608, the 4th number for obtaining the corresponding impedance parameter of the 4th rf frequency
Value；
Second comparing subunit 5609, the size for comparing the 4th numerical value and second value；
Second determination subelement 5610, for when the 4th numerical value is more than second value, determining the second radio frequency
Frequency is the rf frequency with the matches impedances of radio-frequency power plasma.
Alternatively, first adjustment unit 56 can also include：
3rd assignment subelement 5611, for when the 4th numerical value is less than or equal to second value, the 4th being penetrated
The value of frequent rate is assigned to the second rf frequency, the value of the 4th numerical value is assigned into second value, by kth
The individual pulse period is updated to m-th pulse period, wherein, m >=k, and m is positive integer；And trigger institute
State second frequency adjustment subelement 5607 and perform the second rf frequency of the increase, make k-th pulse period
The rf frequency in corresponding radio-frequency power stage reach the 4th rf frequency, obtain the 4th rf frequency corresponding
4th numerical value of impedance parameter.
In embodiments of the present invention, the structure of the plasma impedance coalignment in the low radio frequency power stage
As shown in fig. 7, it is included with lower unit：
3rd setup unit 71, for the radio frequency of high RF power phase sets the 5th within the i-th ' pulse period
Frequency；
3rd acquiring unit 72, obtains the 5th numerical value of impedance parameter corresponding with the 5th rf frequency；
The impedance parameter is any parameter related to plasma reaction chamber load impedance；The impedance parameter with penetrate
The relation of frequent rate is in nonlinear function, and the nonlinear function is the non-linear letter with minimum
Number；
4th setup unit 73, in jth ' the high RF power phase sets the 6th in the individual pulse period penetrate
Frequent rate；
4th acquiring unit 74, for obtaining impedance parameter corresponding with the 6th rf frequency the 6th
Numerical value；
Second comparing unit 75, the size for comparing the 5th rf frequency and the 6th rf frequency, obtains
3rd comparative result, compares the size of the 5th numerical value and the 6th numerical value, obtains the 4th comparative result；
Second adjustment unit 76, for according to the 3rd comparative result and the 4th comparative result, adjusting kth ' it is individual
The rf frequency in the corresponding radio-frequency power stage of pulse period, until the corresponding impedance of rf frequency after adjustment
Parameter reaches minimum value；
Second determining unit 77, for determining that the corresponding rf frequency of impedance parameter minimum value is and radio frequency work(
The rf frequency of the matches impedances of rate plasma；
Wherein, i'＜ j'＜ k', and i ', j ', k ' are positive integer.
The above is only the example of the specific embodiment of the invention, it is noted that those skilled in the art exist
On the premise of not departing from inventive concept of the invention, some improvement made to specific embodiment of the invention
With retouching in the row of protection scope of the present invention.
Claims (13)
1. a kind of impedance matching methods of pulsed radiofrequency plasma, it is characterised in that pulsed is provided and is penetrated
To plasma reaction chamber, the pulsed radio-frequency power includes multiple pulse periods, each pulse week to frequency power
Include the high RF power stage in phase, methods described includes that the plasma impedance in high RF power stage is matched
Process；
The plasma impedance matching process in the high RF power stage includes：
The rf frequency of high RF power phase sets first within the i-th pulse period, obtains and described first
First numerical value of the corresponding impedance parameter of rf frequency；The impedance parameter is to load to hinder with plasma reaction chamber
Any parameter of decorrelation；The impedance parameter is in nonlinear function with the relation of rf frequency, described
Nonlinear function is the nonlinear function with minimum；
The rf frequency of high RF power phase sets second within j-th pulse period, obtains and described the
The second value of the corresponding impedance parameter of two rf frequencies；
Compare the size of the first rf frequency and the second rf frequency, obtain the first comparative result, compare first
The size of numerical value and second value, obtains the second comparative result；
According to the first comparative result and the second comparative result, k-th high RF power rank of pulse period is adjusted
The rf frequency of section, until the corresponding impedance parameter of rf frequency after adjustment reaches minimum value；
Determine that the corresponding rf frequency of impedance parameter minimum value is the impedance phase with radio-frequency power plasma
The rf frequency matched somebody with somebody；
Wherein, i ＜ j ＜ k, and i, j, k are positive integer.
2. method according to claim 1, it is characterised in that it is described according to the first comparative result and
Second comparative result, adjusts k-th rf frequency in the high RF power stage of pulse period, until adjustment
The corresponding impedance parameter of rf frequency afterwards reaches minimum value, specifically includes：
When the first comparative result is that the second rf frequency is more than the first rf frequency, the second comparative result is second
When numerical value is more than the first numerical value；
The value of the first rf frequency is assigned to the second rf frequency, the first numerical value is assigned to second value；
Reduce the second rf frequency, reach the rf frequency in k-th high RF power stage of pulse period
3rd rf frequency, obtains the third value of the corresponding impedance parameter of the 3rd rf frequency；
Compare the size of third value and second value, when third value is more than second value, determine second
Rf frequency is the rf frequency with the matches impedances of radio-frequency power plasma.
3. method according to claim 2, it is characterised in that described to compare third value and second
The size of numerical value, also includes：
When third value is less than or equal to second value, the value of the 3rd rf frequency is assigned to the second radio frequency frequently
Rate, second value is assigned to by third value；Return and perform the second rf frequency of the reduction, make kth
The rf frequency in the high RF power stage of individual pulse period reaches the 3rd rf frequency, obtains the 3rd radio frequency frequently
The step of third value of rate corresponding impedance parameter.
4. method according to claim 2, it is characterised in that, it is described according to the first comparative result and
Second comparative result, adjusts k-th rf frequency in the high RF power stage of pulse period, until adjustment
The corresponding impedance parameter of rf frequency afterwards reaches minimum value, also includes：
It is the when the first comparative result is the second rf frequency more than the first rf frequency and the second comparative result
When two numerical value are less than or equal to the first numerical value,
Increase the second rf frequency, reach the rf frequency in k-th high RF power stage of pulse period
4th rf frequency, obtains the 4th numerical value of the corresponding impedance parameter of the 4th rf frequency；
Compare the size of the 4th numerical value and second value, when the 4th numerical value is more than second value, determine second
Rf frequency is the rf frequency with the matches impedances of radio-frequency power plasma.
5. method according to claim 4, it is characterised in that described to compare the 4th numerical value and second
The size of numerical value, also includes：
When the 4th numerical value is less than or equal to second value, the value of the 4th rf frequency is assigned to the second radio frequency frequently
Rate, second value is assigned to by the value of the 4th numerical value；K-th pulse period is updated to m-th pulse
Cycle, wherein, m ＞ k, and m is positive integer, returns and performs the second rf frequency of the increase, makes the
The rf frequency in the k high RF power stage of pulse period reaches the 4th rf frequency, obtains the 4th radio frequency
The step of four numerical value of frequency corresponding impedance parameter.
6. the method according to claim any one of 1-5, it is characterised in that in each pulse period
Also include the low radio frequency power stage, the methods described also plasma impedance including the low radio frequency power stage is matched
Process；
The plasma impedance matching process in the low radio frequency power stage includes：
The rf frequency of high RF power phase sets the 5th within the i-th ' pulse period, obtains and the described 5th
5th numerical value of the corresponding impedance parameter of rf frequency；The impedance parameter is to load to hinder with plasma reaction chamber
Any parameter of decorrelation；The impedance parameter is in nonlinear function with the relation of rf frequency, described
Nonlinear function is the nonlinear function with minimum；
In jth ' rf frequency of high RF power phase sets the 6th in the individual pulse period, obtain and described the
6th numerical value of the corresponding impedance parameter of six rf frequencies；
Compare the size of the 5th rf frequency and the 6th rf frequency, obtain the 3rd comparative result, compare the 5th
The size of numerical value and the 6th numerical value, obtains the 4th comparative result；
According to the 3rd comparative result and the 4th comparative result, kth is adjusted ' the corresponding radio-frequency power of individual pulse period
The rf frequency in stage, until the corresponding impedance parameter of rf frequency after adjustment reaches minimum value；
Determine that the corresponding rf frequency of impedance parameter minimum value is the impedance phase with radio-frequency power plasma
The rf frequency matched somebody with somebody；
Wherein, i'＜ j'＜ k', and i ', j ', k ' are positive integer.
7. a kind of impedance-matching device of pulsed radiofrequency plasma, it is characterised in that pulsed is provided and is penetrated
To plasma reaction chamber, the pulsed radio-frequency power includes multiple pulse periods, each pulse week to frequency power
Include the high RF power stage in phase, described device includes that the plasma impedance in high RF power stage is matched
Device；
The plasma impedance coalignment in the high RF power stage includes：
First setup unit, for the radio frequency of high RF power phase sets first within the i-th pulse period frequently
Rate；The high RF power stage is identical with the radio-frequency power stage of plasma impedance matching process；
First acquisition unit, the first number for obtaining impedance parameter corresponding with first rf frequency
Value；The impedance parameter is any parameter related to plasma reaction chamber load impedance；The impedance parameter
Relation with rf frequency is in nonlinear function, and the nonlinear function is with the non-linear of minimum
Function；
Second setup unit, in jth ' radio frequency of high RF power phase sets second in the individual pulse period
Frequency；
Second acquisition unit, the second number for obtaining impedance parameter corresponding with second rf frequency
Value,
First comparing unit, the size for comparing the first rf frequency and the second rf frequency, obtains first
Comparative result, compares the size of the first numerical value and second value, obtains the second comparative result；
First adjustment unit, for according to the first comparative result and the second comparative result, adjusting kth ' individual pulse
The rf frequency in the high RF power stage in cycle, until the corresponding impedance parameter of rf frequency after adjustment reaches
To minimum value；
First determining unit, for determining that the corresponding rf frequency of impedance parameter minimum value is with radio-frequency power etc.
The rf frequency of the matches impedances of gas ions；
Wherein, i ＜ j ＜ k, and i, j, k are positive integer.
8. device according to claim 7, it is characterised in that first adjustment unit includes：
First assignment subelement, for being that the second rf frequency is more than the first radio frequency frequently when the first comparative result
Rate, when the second comparative result is that second value is more than the first numerical value；The value of the first rf frequency is assigned to
Two rf frequencies, second value is assigned to by the first numerical value；
First frequency adjusts subelement, for reducing the second rf frequency, makes shooting high for k-th pulse period
The rf frequency of frequency power phase reaches the 3rd rf frequency；
First obtains subelement, the third value for obtaining the corresponding impedance parameter of the 3rd rf frequency；
First comparing subunit, the size for comparing third value and second value；
First determination subelement, for when third value is more than second value, determining that the second rf frequency is
With the rf frequency of the matches impedances of radio-frequency power plasma.
9. device according to claim 8, it is characterised in that first adjustment unit also includes：
Second assignment subelement, for when third value is less than or equal to second value, by the 3rd rf frequency
Value be assigned to the second rf frequency, third value is assigned to second value；And trigger the first frequency
Adjustment subelement performs the second rf frequency of the reduction, makes k-th high RF power stage of pulse period
Rf frequency reach the 3rd rf frequency.
10. device according to claim 8, it is characterised in that first adjustment unit also includes：
Second frequency adjusts subelement, for being that the second rf frequency is more than the first radio frequency when the first comparative result
When frequency and the second comparative result are that second value is less than or equal to the first numerical value, increase the second rf frequency, make
Second rf frequency in k-th high RF power stage of pulse period reaches the 4th rf frequency；
Second obtains subelement, the 4th numerical value for obtaining the corresponding impedance parameter of the 4th rf frequency；
Second comparing subunit, the size for comparing the 4th numerical value and second value；
Second determination subelement, for when the 4th numerical value is more than second value, determining that the second rf frequency is
With the rf frequency of the matches impedances of radio-frequency power plasma.
11. devices according to claim 10, it is characterised in that first adjustment unit is also wrapped
Include：
3rd assignment subelement, for when the 4th numerical value is less than or equal to second value, by the 4th rf frequency
Value be assigned to the second rf frequency, the value of the 4th numerical value is assigned to second value, by k-th pulse week
Phase is updated to m-th pulse period, wherein, m ＞ k, and m is positive integer, and trigger second frequency
Rate adjustment subelement performs the second rf frequency of increase, makes k-th high RF power stage of pulse period
Rf frequency reaches the 4th rf frequency, obtains the 4th numerical value of the corresponding impedance parameter of the 4th rf frequency.
12. device according to claim any one of 7-11, it is characterised in that each pulse period
Inside also include low radio frequency power stage, the described device also plasma impedance including the low radio frequency power stage
With device；
The plasma impedance coalignment in the low radio frequency power stage includes：
3rd setup unit, for the radio frequency of high RF power phase sets the 5th within the i-th ' pulse period frequently
Rate；
3rd acquiring unit, obtains the 5th numerical value of impedance parameter corresponding with the 5th rf frequency；Institute
It is any parameter related to plasma reaction chamber load impedance to state impedance parameter；The impedance parameter and radio frequency
The relation of frequency is in nonlinear function, and the nonlinear function is the nonlinear function with minimum；
4th setup unit, in jth ' radio frequency of high RF power phase sets the 6th in the individual pulse period
Frequency；
4th acquiring unit, the 6th number for obtaining impedance parameter corresponding with the 6th rf frequency
Value；
Second comparing unit, the size for comparing the 5th rf frequency and the 6th rf frequency, obtains the 3rd
Comparative result, compares the size of the 5th numerical value and the 6th numerical value, obtains the 4th comparative result；
Second adjustment unit, for according to the 3rd comparative result and the 4th comparative result, adjusting kth ' individual pulse
The rf frequency in the corresponding radio-frequency power stage in cycle, until the corresponding impedance parameter of rf frequency after adjustment
Reach minimum value；
Second determining unit, for determining that the corresponding rf frequency of impedance parameter minimum value is with radio-frequency power etc.
The rf frequency of the matches impedances of gas ions；
Wherein, i'＜ j'＜ k', and i ', j ', k ' are positive integer.
13. devices according to claim 12, it is characterised in that the high RF power stage
The plasma impedance coalignment in plasma impedance coalignment and low radio frequency power stage is with first-class
Gas ions impedance-matching device.
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