CN106848832A - The single bar bar end pumping pulse laser of one kind miniaturization - Google Patents
The single bar bar end pumping pulse laser of one kind miniaturization Download PDFInfo
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- 238000005086 pumping Methods 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 60
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims description 8
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- 239000000203 mixture Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000006835 compression Effects 0.000 claims description 2
- 238000007906 compression Methods 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 238000001228 spectrum Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 2
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- 230000006641 stabilisation Effects 0.000 claims 1
- 238000011105 stabilization Methods 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 22
- 238000010168 coupling process Methods 0.000 abstract description 22
- 238000005859 coupling reaction Methods 0.000 abstract description 22
- 238000005485 electric heating Methods 0.000 abstract description 8
- 238000003384 imaging method Methods 0.000 abstract description 4
- 239000000306 component Substances 0.000 description 3
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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Abstract
本发明涉及一种用于激光测距、照射、成像的小型化单巴条端面泵浦脉冲激光器。它解决传统激光测距、照射用半导体端面泵浦激光器效率低、发散角大、必须温控的问题。其技术方案是：将零部件单条半导体巴条、耦合透镜一、二，激光器后腔镜、Nd：KGW激光晶体、折返角镜、偏振片、电光调Q开关、1/4波片、激光器输出镜沿着激光光路依次排列安装在激光器机体上构成激光发生单元，并用导线连接半导体激光器电源；温度传感器、电热棒、散热风扇安装在单条半导体巴条热沉上，并连接半导体激光器电源。本端面泵浦脉冲激光器实现激光器大温度范围的稳定工作；本发明激光器成品体积小、重量轻、可靠性高和效率高，广泛适用于激光测距、照射和成像等领域。
The invention relates to a miniaturized single-bar end-face pump pulse laser for laser ranging, irradiation and imaging. It solves the problems of low efficiency, large divergence angle, and temperature control of traditional laser ranging and irradiation semiconductor end-pumped lasers. Its technical solution is: a single semiconductor bar of parts, coupling lenses 1 and 2, laser rear cavity mirror, Nd: KGW laser crystal, reentrant angle mirror, polarizer, electro-optical Q-switch, 1/4 wave plate, laser output The mirrors are arranged and installed on the laser body in sequence along the laser light path to form a laser generating unit, and are connected to the semiconductor laser power supply with wires; the temperature sensor, electric heating rod, and cooling fan are installed on a single semiconductor bar heat sink, and connected to the semiconductor laser power supply. The end-pumped pulsed laser achieves stable operation of the laser in a large temperature range; the finished laser of the invention is small in size, light in weight, high in reliability and high in efficiency, and is widely applicable to fields such as laser ranging, irradiation and imaging.
Description
技术领域technical field
本发明涉及一种小型化单巴条端面泵浦脉冲激光器，它广泛用于激光测距、照射、成像等领域。The invention relates to a miniaturized single-bar end-pump pulse laser, which is widely used in the fields of laser ranging, irradiation, imaging and the like.
背景技术Background technique
半导体泵浦脉冲激光器是激光测距、激光照射的核心部件，在许多激光测距、激光照射应用中，要求激光测距机、照射器体积小、功耗低、重量轻、免温控。由于早期半导体巴条功率较低等因素，传统用于激光测距、激光照射的半导体泵浦激光器都采用侧面泵浦，侧面泵浦与端面泵浦比较，具有效率低、发散角大的缺点，端面泵浦可通过泵浦光和激光模式的较好的匹配，实现脉冲激光基模输出，提高脉冲激光光束质量，随着脉冲半导体巴条功率的提高，单巴条端面泵浦脉冲激光器的输出能量已经可以满足激光测距、照射的能量需求，另外，采用单条半导体巴条端面泵浦Nd：KGW激光晶体的技术方案，利用Nd：KGW激光晶体宽吸收光谱和端面泵浦长吸收深度的特性，降低对单条半导体巴条的温控要求，提高激光器宽温度范围工作适应性，降低了激光器工作功耗。The semiconductor pump pulse laser is the core component of laser ranging and laser irradiation. In many laser ranging and laser irradiation applications, the laser ranging machine and the irradiator are required to be small in size, low in power consumption, light in weight, and free of temperature control. Due to factors such as the low power of early semiconductor bars, traditional semiconductor pump lasers used for laser ranging and laser irradiation all use side pumping. Compared with end pumping, side pumping has the disadvantages of low efficiency and large divergence angle. End pumping can realize the output of pulsed laser fundamental mode through better matching of pump light and laser mode, and improve the quality of pulsed laser beam. With the increase of pulsed semiconductor bar power, the output of single bar end pumped pulsed laser The energy can already meet the energy requirements of laser ranging and irradiation. In addition, a single semiconductor bar is used to pump the Nd: KGW laser crystal technical solution, and the characteristics of the Nd: KGW laser crystal wide absorption spectrum and end-pumped long absorption depth are used. , reduce the temperature control requirements for a single semiconductor bar, improve the working adaptability of the laser in a wide temperature range, and reduce the power consumption of the laser.
发明内容Contents of the invention
本发明的目的是：为解决传统激光测距、激光照射用半导体端面泵浦激光器效率低、发散角大、必须温控的问题，特提供一种小型化单巴条端面泵浦脉冲激光器。The purpose of the present invention is to provide a miniaturized single-bar end-pumped pulse laser in order to solve the problems of low efficiency, large divergence angle and necessary temperature control of the traditional semiconductor end-pumped laser for laser ranging and laser irradiation.
本发明利用Nd：KGW激光晶体宽吸收光谱和端面泵浦长吸收深度的特性，降低对单条半导体巴条的温控要求，提高激光器宽温度范围工作适应性，降低了激光器工作功耗。由于单条半导体巴条端面泵浦可很好的与激光模式匹配，可实现激光器高效率、高光束质量输出。The invention utilizes the characteristics of wide absorption spectrum of Nd: KGW laser crystal and long absorption depth of end-pumping to reduce the temperature control requirements for a single semiconductor bar, improve the working adaptability of the laser in a wide temperature range, and reduce the power consumption of the laser. Since the end pumping of a single semiconductor bar can be well matched with the laser mode, high efficiency and high beam quality output of the laser can be achieved.
为实现上述目的，本发明提出以下技术方案：一种小型化单巴条端面泵浦脉冲激光器，该脉冲激光器由单条半导体巴条2、耦合透镜一3、耦合透镜二4、激光器后腔镜5、Nd：KGW激光晶体6、折返角镜7、偏振片8、电光调Q开关9、1/4波片10、激光器输出镜11，温度传感器12、半导体激光器电源13、电热棒14、散热风扇15组成。将零部件单条半导体巴条2、耦合透镜一3、耦合透镜二4、激光器后腔镜5、Nd：KGW激光晶体6、折返角镜7、偏振片8、电光调Q开关9、1/4波片10、激光器输出镜11沿激光光路依次排列安装在激光器机体1上构成激光器激光发生单元，该激光发生单元用导线连接半导体激光器电源13；温度传感器12、电热棒14、散热风扇15安装在单条半导体巴条2热沉上，并用导线分别连接半导体激光器电源13，用于控制单条半导体巴条2的工作温度；单条半导体巴条2，耦合透镜一3，耦合透镜二4依次排列构成激光器系统；激光器后腔镜5，Nd：KGW激光晶体6，折返镜7，电光调Q开关9，1/4波片10、激光器输出镜11依次排列安装构成激光器谐振腔。半导体激光器电源13为激光器激光发生单元和温度传感器12、电热棒14、散热风扇15工作提供控制和供电。In order to achieve the above object, the present invention proposes the following technical solutions: a miniaturized single-bar end-pumped pulsed laser, the pulsed laser consists of a single semiconductor bar 2, coupling lens one 3, coupling lens two 4, laser rear cavity mirror 5 , Nd: KGW laser crystal 6, turn-back angle mirror 7, polarizer 8, electro-optical Q-switching switch 9, 1/4 wave plate 10, laser output mirror 11, temperature sensor 12, semiconductor laser power supply 13, electric heating rod 14, cooling fan 15 compositions. The components are single semiconductor bar 2, coupling lens 1 3, coupling lens 2 4, laser rear cavity mirror 5, Nd: KGW laser crystal 6, reentrant angle mirror 7, polarizer 8, electro-optic Q-switching switch 9, 1/4 The wave plate 10 and the laser output mirror 11 are arranged sequentially along the laser light path and installed on the laser body 1 to form a laser laser generating unit. The laser generating unit is connected to the semiconductor laser power supply 13 with a wire; A single semiconductor bar 2 is placed on a heat sink, and connected to a semiconductor laser power supply 13 with wires to control the operating temperature of a single semiconductor bar 2; a single semiconductor bar 2, a coupling lens 3, and a coupling lens 2 4 are arranged in sequence to form a laser system ; Laser rear cavity mirror 5, Nd: KGW laser crystal 6, foldback mirror 7, electro-optic Q-switching switch 9, 1/4 wave plate 10, laser output mirror 11 are arranged and installed in sequence to form a laser resonator cavity. Semiconductor laser power supply 13 provides control and power supply for laser laser generation unit and temperature sensor 12, electric heating rod 14, cooling fan 15 work.
折返角镜7折返光路减小激光器体积，所述激光器激光发生单元中的偏振片8、电光调Q开关9、1/4波片10组成的电光调Q或者用Cr4+：YAG被动调Q开关代替，采用Cr4+：YAG被动调Q开关的激光器谐振腔能除去折返角镜7，将激光器输出镜11前移缩短腔长，便于实现更短脉冲激光输出。The turning angle mirror 7 folds back the optical path to reduce the volume of the laser, and the electro-optic Q-switching composed of the polarizer 8, the electro-optic Q-switching switch 9, and the 1/4 wave plate 10 in the laser generating unit or the passive Q-switching with Cr 4+ : YAG Instead of a switch, the laser resonator adopting Cr 4+ : YAG passive Q-switching switch can remove the turning angle mirror 7, and move the laser output mirror 11 forward to shorten the cavity length, so as to realize shorter pulse laser output.
所述单条半导体巴条2采用单巴条封装的准连续传导冷却808nm波长泵浦模块，其功率范围为0-300W；单条半导体巴条2加装快轴压缩，经快轴压缩的单条半导体巴条2快轴发散角为0.25°(半角)，慢轴反三角为8°(半角)；耦合透镜一和耦合透镜二组成的耦合系统用于整形单条半导体巴条2慢轴，使其激光快轴在Nd：KGW激光晶体6中聚焦，耦合透镜一3和耦合透镜二4镀808nm宽光谱增透膜。单条半导体巴条2封装在无氧铜热沉上，当热沉温度低于25℃时由电热棒14将其加热到25℃以上，当热沉温度高于60℃时由散热风扇15将其降温到50℃以下，控制单条半导体巴条2在25℃-50℃的温度范围内。The single semiconductor bar 2 adopts a quasi-continuous conduction cooling 808nm wavelength pump module packaged in a single bar, and its power range is 0-300W; the single semiconductor bar 2 is equipped with fast-axis compression, and the single semiconductor bar compressed by the fast axis The divergence angle of the fast axis of bar 2 is 0.25° (half angle), and the inverse triangle of the slow axis is 8° (half angle); the coupling system composed of coupling lens 1 and coupling lens 2 is used to shape the slow axis of a single semiconductor bar 2 to make the laser fast The axis is focused in Nd: KGW laser crystal 6, coupling lens 1 3 and coupling lens 2 4 are coated with 808nm wide-spectrum anti-reflection coating. A single semiconductor bar 2 is packaged on an oxygen-free copper heat sink. When the temperature of the heat sink is lower than 25°C, it is heated by the electric heating rod 14 to above 25°C. When the temperature of the heat sink is higher than 60°C, it is heated by the cooling fan 15. The temperature is lowered to below 50°C, and the single semiconductor bar 2 is controlled within the temperature range of 25°C-50°C.
与传统激光晶体Nd：YAG相比，Nd：KGW具有以下几个优点：在810nm吸收线附近，，Nd：KGW的半宽度为12nm，比Nd：YAG的1.5nm宽得多，更大的吸收截面和更宽的吸收线宽，有利于高效吸收LD抽运辐射和降低严格控制LD温度的要求；晶体掺杂原子数分数高，到8％时仍未发现明显的浓度猝灭效应。所述Nd：KGW激光晶体6采用高掺杂浓度的Nd：KGW激光晶体，采用端面泵浦提高晶体的吸收深度，便于实现免温控下激光稳定输出；本发明采用Nd：KGW激光晶体6，掺杂浓度为2％-5％，b轴切割，尺寸为4×4×30mm，其中4×4mm的两个面为端面，端面镀膜1.06μmHT，795-830nmHT；Nd：KGW晶体6是由铟箔紧密包裹后安装在紫铜热沉上，便于Nd：KGW激光晶体6废热及时传导给热沉散热。Compared with the traditional laser crystal Nd:YAG, Nd:KGW has the following advantages: Near the 810nm absorption line, the half width of Nd:KGW is 12nm, which is much wider than that of Nd:YAG at 1.5nm, and has a larger absorption The cross-section and wider absorption linewidth are conducive to efficiently absorbing LD pumping radiation and reducing the requirement for strict control of LD temperature; the crystal doping atomic number fraction is high, and no obvious concentration quenching effect has been found when it reaches 8%. The Nd: KGW laser crystal 6 adopts Nd: KGW laser crystal with high doping concentration, and adopts end pumping to increase the absorption depth of the crystal, which is convenient for realizing stable laser output without temperature control; the present invention uses Nd: KGW laser crystal 6, The doping concentration is 2%-5%, b-axis cutting, the size is 4×4×30mm, the two sides of 4×4mm are end faces, the end face coating is 1.06μmHT, 795-830nmHT; Nd: KGW crystal 6 is made of indium The foil is tightly wrapped and installed on the copper heat sink, so that the waste heat of the Nd:KGW laser crystal 6 can be transferred to the heat sink in time for heat dissipation.
激光器后腔镜5为平面镜，腔内面镀膜1.06μmHR，795-830nmHT，腔外面镀膜1.06μmHT，795-830nmHT，激光器后腔镜5为平面镜安装固定在镜架上，并与Nd：KGW晶体6端面平行。The laser rear cavity mirror 5 is a plane mirror, the inner surface of the cavity is coated with 1.06μmHR, 795-830nmHT, the outer surface of the cavity is coated with 1.06μmHT, 795-830nmHT, the laser rear cavity mirror 5 is a flat mirror installed and fixed on the frame, and is connected to the end face of the Nd: KGW crystal 6 parallel.
折返角镜7由角锥棱镜加工而成，折返角镜7的透射面镀1.06μmHT膜，折返角镜7的反射面镀1.06μmHR膜，折返角镜7的角度加工误差小于5″。The turning corner mirror 7 is processed by corner cube prism, the transmission surface of the turning corner mirror 7 is coated with 1.06 μm HT film, the reflecting surface of the turning corner mirror 7 is coated with 1.06 μm HR film, and the angle processing error of the turning corner mirror 7 is less than 5″.
偏振片8安装在一个可绕着光轴旋转的结构上，激光器调试过程中需要旋转偏振片8以实现与Nd：KGW晶体6偏振方向一致。The polarizer 8 is installed on a structure that can rotate around the optical axis, and the polarizer 8 needs to be rotated during laser debugging to achieve the same polarization direction as the Nd:KGW crystal 6 .
激光器电光调Q开关9采用RTP电光调Q开关，RTP电光调Q开关温度适应性强，满足高低温要求，不潮解，开关电压低，便于激光器小型化设计。Laser electro-optic Q-switching switch 9 adopts RTP electro-optic Q-switching switch. The RTP electro-optic Q-switching switch has strong temperature adaptability, meets high and low temperature requirements, does not deliquesce, and has low switching voltage, which is convenient for laser miniaturization design.
1/4波片10安装在一个可绕着光轴旋转的结构上，激光器调试过程中需要旋转1/4波片10实现激光器最大脉冲能量。The 1/4 wave plate 10 is mounted on a structure that can rotate around the optical axis, and the 1/4 wave plate 10 needs to be rotated during laser debugging to achieve the maximum pulse energy of the laser.
激光器输出镜11为平面镜，腔内面镀膜1.06μm 20％透射，腔外面镀膜1.06μmHT激光器输出镜11安装固定在镜架上，镜面与光轴垂直。The laser output mirror 11 is a flat mirror with a 1.06 μm coating on the inner surface of the cavity and 20% transmission, and a 1.06 μm coating on the outside of the cavity. The HT laser output mirror 11 is installed and fixed on the mirror frame, and the mirror surface is perpendicular to the optical axis.
一种小型化单巴条端面泵浦脉冲激光器，调试中先取出1/4波片10，接通电源，启动单条半导体巴条2，控制其温度使其中心波长为808nm，切断RTP电光调Q开关，启动半导体激光器电源为单条半导体巴条2供电，单条半导体巴条2输出200μs泵浦脉冲，调试激光器后腔镜5和激光器输出镜11使激光发生单元出射激光能量最大；然后加装1/4波片10，垂直于激光光轴旋转1/4波片10使激光无输出，此时激光处于关断状态；然后打开RTP电光调Q开关，RTP电光调Q开关时序与单条半导体巴条2泵浦脉冲同步，延迟为200μs，进一步调试激光器后腔镜5和激光器输出镜11获得脉冲激光输出；激光器工作过程中半导体激光器电源控制温度传感器12、电热棒14、散热风扇15工作使单条半导体巴条2的输出波长工作在808nm附近。A miniaturized single-bar end-pumped pulsed laser. During commissioning, first take out the 1/4 wave plate 10, turn on the power, start a single semiconductor bar 2, control its temperature so that its central wavelength is 808nm, and cut off RTP electro-optic Q-switching Switch on and start the semiconductor laser power supply to supply power to the single semiconductor bar 2, and the single semiconductor bar 2 outputs a 200μs pump pulse, and debug the laser rear cavity mirror 5 and the laser output mirror 11 to maximize the laser energy emitted by the laser generating unit; then install 1/ 4 wave plates 10, rotate 1/4 wave plate 10 perpendicular to the laser optical axis to make the laser no output, at this time the laser is in the off state; then turn on the RTP electro-optic Q-switching switch, the timing of the RTP electro-optic Q-switching switch is the same as that of a single semiconductor bar 2 The pumping pulses are synchronized, and the delay is 200 μs. Further debug the laser cavity mirror 5 and the laser output mirror 11 to obtain pulsed laser output; during the laser operation, the semiconductor laser power supply controls the temperature sensor 12, the electric heating rod 14, and the cooling fan 15 to make the single semiconductor bar The output wavelength of strip 2 works around 808nm.
本发明的有益效果是：本发明单条半导体巴条在工作时间内的发射波长与Nd：KGW激光晶体较宽的吸收谱线相匹配，实现激光器大温度范围的稳定工作；本发明激光器成品体积小、重量轻、可靠性高和效率高，广泛适用于激光测距、照射和成像等领域。The beneficial effects of the present invention are: the emission wavelength of the single semiconductor bar of the present invention matches the wider absorption line of the Nd:KGW laser crystal within the working time, and realizes the stable operation of the laser in a large temperature range; the finished laser of the present invention has a small volume , light weight, high reliability and high efficiency, widely used in laser ranging, irradiation and imaging and other fields.
附图说明Description of drawings
图1、为本小型化单巴条端面泵浦脉冲激光器的结构示意图Figure 1. Schematic diagram of the structure of the miniaturized single-bar end-pumped pulsed laser
图中：1、激光器机体，2、单条半导体巴条，3、耦合透镜一，4、耦合透镜二，5、激光器后腔镜，6、Nd：KGW激光晶体，7、折返角镜，8、偏振片，9、电光调Q开关，10、1/4波片，11、激光器输出镜，12、温度传感器，13、半导体激光器电源，14、电热棒，15、散热风扇。In the figure: 1. Laser body, 2. Single semiconductor bar, 3. Coupling lens 1, 4. Coupling lens 2, 5. Laser rear cavity mirror, 6. Nd: KGW laser crystal, 7. Turn-back angle mirror, 8. Polarizer, 9. Electro-optic Q-switching switch, 10. 1/4 wave plate, 11. Laser output mirror, 12. Temperature sensor, 13. Semiconductor laser power supply, 14. Electric heating rod, 15. Cooling fan.
具体实施方式detailed description
下面结合附图对本发明作进一步说明Below in conjunction with accompanying drawing, the present invention will be further described
根据图1所示，本发明提供的一种小型化单巴条端面泵浦脉冲激光器由激光器机体1、单条半导体巴条2、耦合透镜一3、耦合透镜二4、激光器后腔镜5、Nd：KGW激光晶体6、折返角镜7、偏振片8、电光调Q开关9、1/4波片10、激光器输出镜11、温度传感器12、半导体激光电源13部件、电热棒14和散热风扇15构成，结构特征是：除激光器机体1和半导体激光电源13外的部件都安装在激光器机体1上，温度传感器12、电热棒14和散热风扇15安装在单条半导体巴条2热沉上，用于控制其在设定的温度范围内工作，单条半导体巴条2、耦合透镜一3、耦合透镜二4依次排列构成激光器泵浦系统；激光器后腔镜5、Nd：KGW激光晶体6、折返角镜7、偏振片8、电光调Q开关9、1/4波片10、激光器输出镜11沿光路依次排列安装构成激光器谐振腔。According to Fig. 1, a kind of miniaturized single-bar end-pumped pulsed laser provided by the present invention consists of a laser body 1, a single semiconductor bar 2, a coupling lens 3, a coupling lens 2 4, a laser rear cavity mirror 5, Nd : KGW laser crystal 6, turn-back angle mirror 7, polarizer 8, electro-optic Q-switching switch 9, 1/4 wave plate 10, laser output mirror 11, temperature sensor 12, semiconductor laser power supply 13 components, electric heating rod 14 and cooling fan 15 Composition, the structural features are: all components except the laser body 1 and the semiconductor laser power supply 13 are installed on the laser body 1, the temperature sensor 12, the electric heating rod 14 and the cooling fan 15 are installed on the heat sink of a single semiconductor bar 2, for Control it to work within the set temperature range, a single semiconductor bar 2, coupling lens 1 3, and coupling lens 2 4 are arranged in sequence to form a laser pumping system; laser rear cavity mirror 5, Nd: KGW laser crystal 6, reentrant angle mirror 7. Polarizing plate 8, electro-optic Q-switching switch 9, 1/4 wave plate 10, and laser output mirror 11 are arranged and installed in sequence along the optical path to form a laser resonator cavity.
激光器泵浦系统由单条半导体巴条2、耦合透镜一3、耦合透镜二4依次排列构成，单条半导体巴条2经耦合透镜一3和耦合透镜二4耦合后在Nd：KGW激光晶体6中聚焦。The laser pumping system is composed of a single semiconductor bar 2, a coupling lens 3, and a coupling lens 2 4 arranged in sequence, and the single semiconductor bar 2 is focused in the Nd:KGW laser crystal 6 after being coupled by the coupling lens 1 3 and the coupling lens 2 4 .
所述激光谐振腔自激光器后腔镜5、Nd：KGW激光晶体6、折返角镜7、偏振片8、电光调Q开关9、1/4波片10、激光器输出镜11沿光路依次排列构成。其中偏振片8、电光调Q开关9、1/4波片组成的电光调Q也可以由Cr4+：YAG被动调Q开关代替，采用Cr4+：YAG被动调Q开关的激光器谐振腔可以省去折返角镜7，激光器输出镜11前移缩短腔长，便于实现更短脉冲激光输出。The laser resonator consists of laser rear cavity mirror 5, Nd:KGW laser crystal 6, turn-back angle mirror 7, polarizer 8, electro-optic Q-switch 9, 1/4 wave plate 10, and laser output mirror 11 arranged in sequence along the optical path. . The electro-optic Q-switching composed of polarizer 8, electro-optic Q-switching switch 9, and 1/4 wave plate can also be replaced by Cr 4+ : YAG passive Q-switching switch, and the laser resonator using Cr 4+ : YAG passive Q-switching switch can be The turning angle mirror 7 is omitted, and the laser output mirror 11 is moved forward to shorten the cavity length, so as to facilitate the realization of shorter pulse laser output.
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