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CN106835022A - 双曲线回转面栅网板离子源 - Google Patents

双曲线回转面栅网板离子源 Download PDF

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Publication number
CN106835022A
CN106835022A CN201710211184.XA CN201710211184A CN106835022A CN 106835022 A CN106835022 A CN 106835022A CN 201710211184 A CN201710211184 A CN 201710211184A CN 106835022 A CN106835022 A CN 106835022A
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Prior art keywords
plate
aperture plate
ion gun
hyperbola
aperture
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刘杰
刘康
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Shanghai Wei Zhao Optics Science And Technology Co Ltd
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Shanghai Wei Zhao Optics Science And Technology Co Ltd
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Priority to CN201710211184.XA priority Critical patent/CN106835022A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

光学辅助镀膜离子源的栅网板通常做成凸曲面形状，以获得在一定空间角中扩散形的离子束流。本发明提出一种双曲线回转面的凸曲面形状栅网板设计，从栅网板凸曲面的横截面上看，凸曲线是一种双曲线，由中部的弧线段和两侧的近似渐近线段组成，通过对双曲线特性参数的调整，可适用于对不同栅网板口径、不同离子束流空间角的设计，用这种双曲线回转面栅网板制作的离子源离子束流截面能量分布均衡。

Description

双曲线回转面栅网板离子源
技术领域
本发明涉及一种离子源的离子引出栅网板的设计，属于电子技术领域。
背景技术
离子源广泛应用于光学真空镀膜、材料表面精细抛光与蚀刻等领域，在光学辅助镀膜离子源中，栅网板通常做成凸曲面形状，以获得在一定空间角中扩散形的离子束流，离子束截面的能量分布希望尽可能均衡，在被照射的工件表面希望各处轰击能量尽可能一致，栅网板的凸曲面形状，决定了离子束流的运行轨迹和空间角中离子束流截面的能量分布。
发明内容
现有的离子源离子引出系统栅网板，如考夫曼源中的屏极、加速极两层栅网板，或射频源中的屏极、加速极、抑制极三层栅网板，板上开有数百只至数千只小孔，离子流从小孔中射出，轰击被加工工件表面。栅网板通常做成凸曲面形状，以获得空间扩散形离子束流，并希望在一定空间角中离子束流截面能量分布均衡。不同的栅网板口径和不同的束流空间角设计，要将栅网板加工成不同的凸曲面形状，栅网板的凸曲面形状通常由精细加工的模具压型而成。
本发明提出了一种双曲线回转面的凸曲面形状栅网板设计方案，从栅网板凸曲面的横截面上看，凸曲线是一种双曲线，由中部的弧线段和两侧的近似渐近线段组成。双曲线的数学函数式是
y2/a2-x2/(ka)2＝1
，式中的k决定了双曲线两侧的渐近线斜率，即决定了栅网板两侧接近于直线段回转形成的锥面与轴线横截面的夹角β，式中的a决定了双曲线中央弧线顶部距原点的距离，即决定了栅网板中央回转曲面部分的口径和隆起高度，减小夹角β和增大曲面部分口径a，栅网板越扁平，离子束流空间角越小，增大夹角β和减小曲面部分口径a，栅网板越凸起，离子束流空间角越大。
本发明的有益之处是，通过简洁的数学函数式表述栅网板形状，方便压型模具的制作，并且通过简单的参数调整，可适于对不同栅网板口径、不同离子束流空间角的凸曲面形状设计，用这种双曲线回转面栅网板可以制作离子束流截面能量分布均衡的离子源。
附图说明
图1是本发明实施例的示意图。
具体实施方式
以下结合附图进一步详细说明本发明的实施例。
离子源金属栅网板通常为圆形，周围是不凸起的裙边(1)，中间的凸起部分是双曲线形成的回转面，双曲线可看作由边上近似直线渐近线部分(2)和中央弧线部分(3)组成，近似直线渐近线部分(2)与轴线的横截面之间形成夹角β。
调整双曲线的参数a和k，即可调整栅网板的渐近线夹角β和中央隆起的高度，例如对于凸曲面口径170毫米的栅网板，选取a等于35、k等于2.4得到双曲回转面，这时渐近线夹角β约22.6°，中央隆起高度约14.8毫米，这种双曲线回转面栅网板可用以制作在约1.2米远距离、约50°空间角内离子束流截面能量分布均衡的离子源。

Claims (4)

1.一种双曲线回转面型凸曲面栅网板离子源，其特征在于采用了双曲线回转面作为栅网板的凸曲面面型，这种离子源可以在一定空间角内获得截面能流密度均衡的离子束流。
2.如权利要求1所述的离子源，其特征在于栅网板指考夫曼源离子引出系统中的屏极栅网板和加速极栅网板。
3.如权利要求1所述的离子源，其特征在于栅网板指射频源离子引出系统中的屏极栅网板、加速极栅网板和抑制极栅网板。
4.如权利要求1所述的离子源，其特征在于栅网板凸曲面部分通过调整双曲线实轴长度和渐近线斜率，可改变凸曲面的边缘倾斜角度、中央隆起高度和弯曲程度。
CN201710211184.XA 2017-03-31 2017-03-31 双曲线回转面栅网板离子源 Withdrawn CN106835022A (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620102A (en) * 1984-03-26 1986-10-28 Seiko Instruments & Electronics Ltd. Electron-impact type of ion source with double grid anode
CN1222981A (zh) * 1997-04-11 1999-07-14 休斯电子公司 有孔曲面电极及其加工方法
US20020074508A1 (en) * 2000-12-14 2002-06-20 Kahn James R. Ion optics with shallow dished grids
CN1725424A (zh) * 2004-07-23 2006-01-25 亚洲光学股份有限公司 改良型离子枪
CN101490789A (zh) * 2006-07-20 2009-07-22 阿维扎技术有限公司 离子源
CN206666628U (zh) * 2017-03-31 2017-11-24 上海伟钊光学科技股份有限公司 双曲线回转面栅网板离子源

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620102A (en) * 1984-03-26 1986-10-28 Seiko Instruments & Electronics Ltd. Electron-impact type of ion source with double grid anode
CN1222981A (zh) * 1997-04-11 1999-07-14 休斯电子公司 有孔曲面电极及其加工方法
US20020074508A1 (en) * 2000-12-14 2002-06-20 Kahn James R. Ion optics with shallow dished grids
CN1725424A (zh) * 2004-07-23 2006-01-25 亚洲光学股份有限公司 改良型离子枪
CN101490789A (zh) * 2006-07-20 2009-07-22 阿维扎技术有限公司 离子源
CN206666628U (zh) * 2017-03-31 2017-11-24 上海伟钊光学科技股份有限公司 双曲线回转面栅网板离子源

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Application publication date: 20170613